CN204927325U - Light -emitting diode packaging structure - Google Patents
Light -emitting diode packaging structure Download PDFInfo
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- CN204927325U CN204927325U CN201420869040.5U CN201420869040U CN204927325U CN 204927325 U CN204927325 U CN 204927325U CN 201420869040 U CN201420869040 U CN 201420869040U CN 204927325 U CN204927325 U CN 204927325U
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- light
- emitting diode
- adhesive layer
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- fluorescent adhesive
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Abstract
The utility model discloses a light -emitting diode packaging structure contains the luminescence unit, the bonding glue film, it covers this luminescence unit, and the fluorescence glue film, its cover glue film of should binding, the refracting index of the glue film of wherein binding is greater than the refracting index of fluorescence glue film. The utility model provides a light -emitting diode packaging structure have and the luminescence unit and the fluorescence glue film between the good bonding glue film of adhesion nature, therefore can promote light -emitting diode packaging structure's stability. In addition, the refracting index of bonding glue film is greater than the fluorescence glue film, and can obtain bigger light -emitting angle, and the light source of production is more even.
Description
Technical field
The utility model relates to a kind of package structure for LED, particularly relates to the package structure for LED that a kind of packaging plastic interlayer refractive index is different.
Background technology
The advantages such as light-emitting diode (lightemittingdiode, LED) has that power consumption is low, component life is long, need not warm up the lamp time and reaction speed is fast.Add that its volume is little, vibration resistance, applicable volume production, easy fit applications demand and make element that is minimum or array, therefore various application can be widely used in, such as the light source of notebook computer, monitor, mobile phone, TV and liquid crystal display backlight module used.Moreover along with the continuous lifting of technical field, developed the High Power LED of high illumination briliancy at present, its luminous intensity has reached the degree of illumination.
In actual applications, LED wafer need to be placed on base plate for packaging and to carry out encapsulating to protect LED wafer, normally covering LED wafer with fluorescent adhesive layer.The light that LED wafer produces by the fluorescent material in fluorescence excitation glue-line, and makes the electronics in fluorescent material rise to the excitation state on high energy rank.When low energy rank are gone back in electron transition, energy radiates in the form of light.Utilize the principle of complementary coloured light, the light that luminescence unit and fluorescent adhesive layer produce is blended together various colorful in riotous profusion light.
But the adhesiveness between fluorescent adhesive layer and LED wafer is poor, the aqueous vapor in air, by LED wafer accurate for impact, makes CIE hue error value become large.For example, aqueous vapor easily enters between fluorescent adhesive layer and LED wafer, and expanded by heating makes fluorescent adhesive layer peel off when lighting, and now the reliability of package structure for LED significantly reduces.In addition, the light that LED wafer produces is comparatively concentrated, makes illuminated object brightness bright especially.But outside light emitting region, then show obvious dark space.This strong comparison of light and shade causes dazzle chief reason, more can allow human physiology and doing not feel like oneself psychologically.Again, how to allow the light that LED wafer produces, as blue light, the ratio sent uprises, and is also facing challenges in present stage R&D process.
Utility model content
Therefore, the purpose of this utility model is open a kind of package structure for LED, and being used for increases the adhesiveness between fluorescent adhesive layer and LED wafer, and can increase the lighting angle of LED wafer.
An aspect of the present utility model is to provide a kind of encapsulating structure of light-emitting diode, comprises luminescence unit; Bonding glue-line, it covers this luminescence unit; And fluorescent adhesive layer, it covers this bonding glue-line, and the refractive index wherein bonding glue-line is greater than the refractive index of fluorescent adhesive layer.
According to the utility model execution mode, wherein have multiple bonding glue-line between fluorescent adhesive layer and luminescence unit, the refractive index of these bonding glue-lines is different.
According to the utility model execution mode, wherein bond the refractive index of glue-line between 1.5 to 1.7.
According to the utility model execution mode, wherein the refractive index of fluorescent adhesive layer is between 1.4 to 1.49.
According to the utility model execution mode, wherein fluorescent adhesive layer comprises silica gel and fluorescent material, and fluorescent material is scattered in silica gel.
According to the utility model execution mode, wherein the blue light-emitting diode wafer of luminescence unit to be luminescence band be 440nm to 475nm or luminescence band are the ultraviolet light-emitting diodes wafer of 360nm to 400nm, and fluorescent material is yttrium aluminium garnet fluorescent powder (Y3Al5O12:Ce, YAG).
According to the utility model execution mode, wherein fluorescent adhesive layer has roughened surface.
According to the utility model execution mode, wherein roughened surface is positioned at the upper surface of fluorescent adhesive layer.
According to the utility model execution mode, wherein on the contact-making surface of roughened surface between fluorescent adhesive layer and bonding glue-line.
According to the utility model execution mode, wherein roughened surface has photon crystal structure.
The package structure for LED that the utility model provides have and luminescence unit and and fluorescent adhesive layer between the bonding glue-line of good adhesion, thus can promote the stability of package structure for LED.In addition, the refractive index of bonding glue-line is greater than fluorescent adhesive layer, and can obtain larger rising angle, and the light source of generation is more even.
Accompanying drawing explanation
For above and other object of the present utility model, feature, advantage and embodiment can be become apparent, being described in detail as follows of appended accompanying drawing:
Fig. 1 is the profile of a kind of LED wafer according to the utility model some embodiments.
Fig. 2 is the profile of a kind of package structure for LED according to the utility model some embodiments.
Fig. 3 is the profile of a kind of package structure for LED according to other some embodiments of the utility model.
Fig. 4 is the profile of a kind of package structure for LED according to other some embodiments of the utility model.
Fig. 5 is the profile of a kind of package structure for LED according to other some embodiments of the utility model.
Fig. 6 is preparation method's flow chart of a kind of package structure for LED according to the utility model some embodiments.
Embodiment
In order to make describing of present disclosure more detailed and complete, hereafter enforcement aspect of the present utility model and specific embodiment are described with reference to the accompanying drawings; But this not implements or uses the unique forms of the utility model specific embodiment.Following the disclosed embodiment, can mutually combine or replace useful when, also can add other embodiment in one embodiment, and need not further record or illustrate.
Refer to Fig. 1, Fig. 1 is the profile of a kind of LED wafer according to the utility model some embodiments.As shown in Figure 1, LED wafer 100 comprises: substrate 110 and light-emitting diode epitaxial layer 120 are positioned at above described substrate 110, and wherein substrate 110 is sapphire substrate, silicon carbide substrate, gallium nitride base board or glass substrate.
Light-emitting diode epitaxial layer 120 is respectively n-type semiconductor layer 122 from the bottom to top; Luminescent layer 124; And p-type semiconductor layer 126.When adding forward bias voltage drop, most carrier electricity holes of p-type semiconductor layer 126 can be moved toward n-type semiconductor layer 122 direction; Most carrier electrons of n-type semiconductor layer 122 then move toward p-type semiconductor layer 126 direction.Electronics and electric hole are in the exhaustion region compound of p-n junction, and now electronics loses energy rank after being passed to valency electricity band by conduction band, and produces light with form of photons released energy.Wherein, p-n junction is luminescent layer 124.
There are p-type electrode 130 and n-type electrode 140 above light-emitting diode epitaxial layer 120, are electrically connected to p-type semiconductor layer 126 and n-type semiconductor layer 122 respectively.The coated luminescent layer 124 of reflection layer 150, p-type semiconductor layer 126 and p-type electrode 130, wherein reflection layer 150 can change the course of the light produced by luminescent layer 124, makes light by substrate 110 bright dipping.
In section Example of the present utility model, wherein reflection layer 150 is comprehensive reflector, and it is stacked formation so that the sub-reflector of two kinds of different refractivities is staggered.The material in the sub-reflector of two kinds of different refractivities can be titanium oxide/silica, alumina/silica or nitrogenize silicon/oxidative silicon.
In other section Example of the present utility model, wherein reflection layer is aluminium lamination or silver layer.
Two metal coupling 160a and 160b are then electrically connected to p-type electrode 130 and n-type electrode 140 respectively, and it is linked to outer member when encapsulating, and order makes light emitting diode construction 100 work.By reflection layer 150, the light that luminescent layer 124 produces enters in air by substrate 110, avoids metal coupling 160a and 160b to cover the light loss of generation.
Please continue to refer to the profile that Fig. 2, Fig. 2 are a kind of package structure for LED according to the utility model some embodiments.As shown in Figure 2, package structure for LED 200 comprises luminescence unit 210, and luminescence unit 210 is the LED wafer 100 shown in Fig. 1, and it is to cover crystal type encapsulation.In other section Example of the present utility model, luminescence unit can be non-flip chip type LED wafer.Bonding glue-line 220 covers luminescence unit 210, and fluorescent adhesive layer 230 covers bonding glue-line 220.
Because the adhesiveness between fluorescent adhesive layer 230 and luminescence unit 210 is not good, water in air gas can affect accurate LED wafer.When producing light, fluorescent adhesive layer 230 easily peels off because of heat expansion effect, and the reliability of package structure for LED 200 is significantly reduced, and makes CIE hue error value become large.Accordingly, select and luminescence unit 210 and and fluorescent adhesive layer 230 between all there is the bonding glue-line 220 of good adhesion, promote the stability of package structure for LED 200.
Wherein, the refractive index bonding glue-line 220 is greater than the refractive index of fluorescent adhesive layer 230.The light that luminescence unit 210 produces, when the contact-making surface by bonding glue-line 220 and fluorescent adhesive layer 230, can produce refraction effect.Refractive index due to fluorescent adhesive layer 230 is less than bonding glue-line 220, and light, by meeting off-normal during contact-making surface, makes lighting angle become large.Larger lighting angle represents that light irradiates more without dead angle, reach evenly illumination, the ratio that more light can be made to send uprises, and it has preferably application.
Wherein, bonding glue-line 220 selects the transparent material of refractive index between 1.5 to 1.7, as epoxy resin, phenyl silicon or its combination.The refractive index of fluorescent adhesive layer 230 is then between 1.4 to 1.49, and wherein fluorescent adhesive layer 230 comprises silica gel and fluorescent material is scattered in silica gel.
In section Example of the present utility model, luminescence unit 210 is blue light-emitting diode wafer (luminescence band 440nm-475nm), red light-emitting diode wafer (luminescence band 610nm-660nm), green light LED wafer (luminescence band 500nm-535nm), amber light-emitting diode wafer (luminescence band 580nm-600nm) or ultraviolet light-emitting diodes wafer (luminescence band 360nm-400nm).In section Example of the present utility model, fluorescent material is yellow fluorescent powder, green light fluorescent powder, red light fluorescent powder or its combination.
In section Example of the present utility model, luminescence unit 210 is blue light-emitting diode wafer or ultraviolet light-emitting diodes wafer, and fluorescent material is yellow fluorescent powder.Blue light or ultraviolet light and fluorescent material excite the gold-tinted of rear generation to blend together rear formation white light, and wherein yellow fluorescent powder is yttrium aluminium garnet fluorescent powder (Y3Al5O12:Ce, YAG).
In section Example of the present utility model, between fluorescent adhesive layer 230 and luminescence unit 210, have multiple bonding glue-line, and the refractive index of these bonding glue-lines is different.
Refer to Fig. 3, Fig. 3 is the profile of a kind of package structure for LED according to other some embodiments of the utility model.As shown in Figure 3, package structure for LED 300 comprises luminescence unit 310, and luminescence unit 310 is the LED wafer 100 shown in Fig. 1, and it is to cover crystal type encapsulation.In other section Example of the present utility model, luminescence unit can be non-flip chip type LED wafer.Bonding glue-line 320 covers luminescence unit 310, and fluorescent adhesive layer 330 covers bonding glue-line 320.
Bonding glue-line 320, because all having good adhesion between luminescence unit 310 and fluorescent adhesive layer 330, therefore can promote the stability of package structure for LED 300.
In addition, bonding glue-line 320 is different from the refractive index of fluorescent adhesive layer 330, and the light that luminescence unit 310 produces, when the contact-making surface by bonding glue-line 320 and fluorescent adhesive layer 330, can produce refraction effect.Refractive index due to fluorescent adhesive layer 330 is less than bonding glue-line 320, light by can off-normal during contact-making surface, make lighting angle become large and reach evenly illumination.In addition, more can make light, as blue light, the ratio sent uprises.
Fluorescent adhesive layer 330 has roughened surface 332, because refractive index difference between fluorescent adhesive layer 330 and air is large, easily produces total reflection when causing light to enter air by fluorescent adhesive layer 330, significantly reduces light extraction yield.Roughened surface 332 can destroy and reduce the chance producing total reflection when light enters air from fluorescent adhesive layer 330, and guide light to enter to increase light extraction yield in air, the ratio making light send further uprises.Wherein, the upper surface of fluorescent adhesive layer 330 is impressed or the mode of lithography to obtain roughened surface 332.In section Example of the present utility model, impression can use hot pressing or mode of colding pressing to form roughened surface 332.
Refer to Fig. 4, Fig. 4 is a kind of package structure for LED cutaway view according to other some embodiments of the utility model.As shown in Figure 4, package structure for LED 400 comprises luminescence unit 410, and luminescence unit 410 is the LED wafer 100 shown in Fig. 1, and it is to cover crystal type encapsulation.In other section Example of the present utility model, luminescence unit can be non-flip chip type LED wafer.Bonding glue-line 420 covers luminescence unit 410, and fluorescent adhesive layer 430 covers bonding glue-line 420.
Fluorescent adhesive layer 430 has roughened surface 432, and this roughened surface 432 has periodic concaveconvex structure, usually also known as making photonic crystal.Photonic crystal can revise the angle of incident ray, and when incidence angle is less than critical angle, light can enter in air by fluorescent adhesive layer 430, and significantly reduce the chance that total reflection occurs, and promote light extraction yield, the ratio that light is sent uprises.Wherein, the upper surface of fluorescent adhesive layer 430 is impressed or the mode of lithography to obtain roughened surface 432.In section Example of the present invention, impression can use hot pressing or mode of colding pressing to form roughened surface 432.
Please continue to refer to a kind of package structure for LED cutaway view that Fig. 5, Fig. 5 are according to other some embodiments of the utility model.As shown in Figure 5, package structure for LED 500 comprises luminescence unit 510, and luminescence unit 510 is the LED wafer 100 shown in Fig. 1, and it is to cover crystal type encapsulation.In other section Example of the present utility model, luminescence unit 510 can be non-flip chip type LED wafer.Bonding glue-line 520 covers luminescence unit 510, and fluorescent adhesive layer 530 covers bonding glue-line 520.
Bonding glue-line 520 has roughened surface 522 with the contact-making surface of fluorescent adhesive layer 530, roughened surface 522 can destroy or reduce the chance that light produces total reflection when bonding glue-line 520 enters fluorescent adhesive layer 530, and light can be guided to enter fluorescent adhesive layer 530 and increase lighting angle, further increase the bright dipping ratio of light.Wherein, the upper surface of bonding glue-line 520 is impressed or the mode of lithography to obtain roughened surface 522.In section Example of the present invention, impression can use hot pressing or mode of colding pressing to form roughened surface 522.
In section Example of the present utility model, roughened surface 522 is for having the photonic crystal of periodically concaveconvex structure.
In other section Example of the present utility model, the upper surface of fluorescent adhesive layer 530 is also roughened surface, and it can guide light to be entered in air by fluorescent adhesive layer 530 to increase light extraction yield.In other section Example of the present utility model, the roughened surface of fluorescent adhesive layer 530 is the photonic crystal with periodically concaveconvex structure.
Fig. 6 is preparation method's flow chart of the package structure for LED 200 according to the utility model some embodiments.Please first cf. steps 610, first provide luminescence unit 210, luminescence unit 210 is the LED wafer 100 shown in Fig. 1, and it is to cover crystal type encapsulation.
Then perform step 620, some glue makes adhesive glue cover luminescence unit 210, and forms bonding glue-line 220.Bonding glue-line 220 selects the transparent material of refractive index between 1.5 to 1.7, as epoxy resin, phenyl silicon or its combination.
Finally perform step 630, some glue makes fluorescent glue cover luminescence unit 210, and forms fluorescent adhesive layer 230, and wherein the refractive index of fluorescent adhesive layer 230 is less than the refractive index of bonding glue-line 220.The refractive index of fluorescent adhesive layer 230 is then between 1.4 to 1.49, and wherein fluorescent adhesive layer 230 comprises silica gel and fluorescent material is scattered in silica gel.
In section Example of the present utility model, luminescence unit 210 is blue light-emitting diode (luminescence band 440nm-475nm), red light-emitting diode (luminescence band 610nm-660nm), green light LED (luminescence band 500nm-535nm), amber light-emitting diode wafer (luminescence band 580nm-600nm) or ultraviolet light-emitting diodes (luminescence band 360nm-400nm).In section Example of the present utility model, fluorescent material is yellow fluorescent powder, green light fluorescent powder, red light fluorescent powder or its combination.
In section Example of the present utility model, luminescence unit 210 is blue light-emitting diode wafer or ultraviolet light-emitting diodes wafer, and fluorescent material is yellow fluorescent powder.Blue light or ultraviolet light and fluorescent material excite the gold-tinted of rear generation to blend together rear formation white light, and wherein yellow fluorescent powder is yttrium aluminium garnet fluorescent powder (Y3Al5O12:Ce, YAG).
From above-mentioned the utility model embodiment, the utility model has following advantages.Package structure for LED disclosed in the utility model has bonding glue-line, itself and luminescence unit and and fluorescent adhesive layer between good adhesion, thus can promote the stability of package structure for LED, peel off when making fluorescent adhesive layer be not easy to running.In addition, the refractive index bonding glue-line is greater than fluorescent adhesive layer.Light produces when entering the little medium of refractive index by the medium that refractive index is large to be dispersed, and can obtain larger rising angle, and the light source of generation is more even.
On the other hand, more can to the surface of fluorescent adhesive layer, the contact-making surface of fluorescent adhesive layer and adhesive glue interlayer carries out impressing or lithography to obtain roughened surface.Roughened surface can destroy and reduce the chance producing total reflection when light enters different medium, makes most light can enter air by package structure for LED, significantly increases light extraction yield.
Although the utility model with embodiment openly as above; so it is not used for limiting the utility model; any those skilled in the art; not departing from spirit and scope of the present utility model; can do various selections and amendment, therefore protection range of the present utility model limited by claims and equivalents thereof.
Claims (10)
1. an encapsulating structure for light-emitting diode, is characterized in that, the encapsulating structure of described light-emitting diode comprises:
Luminescence unit;
Bonding glue-line, it covers described luminescence unit; And
Fluorescent adhesive layer, it covers described bonding glue-line, and the refractive index of wherein said bonding glue-line is greater than the refractive index of described fluorescent adhesive layer.
2. the encapsulating structure of light-emitting diode as claimed in claim 1, it is characterized in that having multiple bonding glue-line between described fluorescent adhesive layer and described luminescence unit, the refractive index of described multiple bonding glue-line is different.
3. the encapsulating structure of light-emitting diode as claimed in claim 1, it is characterized in that, the refractive index of described bonding glue-line is between 1.5 to 1.7.
4. the encapsulating structure of light-emitting diode as claimed in claim 1, it is characterized in that, the refractive index of described fluorescent adhesive layer is between 1.4 to 1.49.
5. the encapsulating structure of light-emitting diode as claimed in claim 4, it is characterized in that, described fluorescent adhesive layer comprises silica gel and fluorescent material, and described fluorescent material is scattered in described silica gel.
6. the encapsulating structure of light-emitting diode as claimed in claim 5, it is characterized in that, the blue light-emitting diode wafer of described luminescence unit to be luminescence band be 440nm to 475nm or luminescence band are the ultraviolet light-emitting diodes wafer of 360nm to 400nm, and described fluorescent material is yttrium aluminium garnet fluorescent powder (Y
3al
5o
12: Ce, YAG).
7. the encapsulating structure of light-emitting diode as claimed in claim 1, it is characterized in that, described fluorescent adhesive layer has roughened surface.
8. the encapsulating structure of light-emitting diode as claimed in claim 7, it is characterized in that, described roughened surface is positioned at the upper surface of described fluorescent adhesive layer.
9. the encapsulating structure of light-emitting diode as claimed in claim 7, is characterized in that, on the contact-making surface of described roughened surface between described fluorescent adhesive layer and described bonding glue-line.
10. the encapsulating structure of light-emitting diode as claimed in claim 7, it is characterized in that, described roughened surface has photon crystal structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420869040.5U CN204927325U (en) | 2014-12-31 | 2014-12-31 | Light -emitting diode packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420869040.5U CN204927325U (en) | 2014-12-31 | 2014-12-31 | Light -emitting diode packaging structure |
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| Publication Number | Publication Date |
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| CN204927325U true CN204927325U (en) | 2015-12-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420869040.5U Expired - Fee Related CN204927325U (en) | 2014-12-31 | 2014-12-31 | Light -emitting diode packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810794A (en) * | 2014-12-31 | 2016-07-27 | 萨摩亚商天兆有限公司 | LED packaging structure |
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2014
- 2014-12-31 CN CN201420869040.5U patent/CN204927325U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810794A (en) * | 2014-12-31 | 2016-07-27 | 萨摩亚商天兆有限公司 | LED packaging structure |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151230 Termination date: 20161231 |
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| CF01 | Termination of patent right due to non-payment of annual fee |