CN104993040B - A kind of face-down bonding chip and its welding method - Google Patents
A kind of face-down bonding chip and its welding method Download PDFInfo
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- CN104993040B CN104993040B CN201510272981.XA CN201510272981A CN104993040B CN 104993040 B CN104993040 B CN 104993040B CN 201510272981 A CN201510272981 A CN 201510272981A CN 104993040 B CN104993040 B CN 104993040B
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- pad
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- eutectic solder
- tin
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- 238000003466 welding Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 33
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910000679 solder Inorganic materials 0.000 claims abstract description 55
- 239000000843 powder Substances 0.000 claims abstract description 54
- 230000005496 eutectics Effects 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000005507 spraying Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 9
- 239000006071 cream Substances 0.000 abstract description 53
- 230000000694 effects Effects 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 229910052718 tin Inorganic materials 0.000 description 82
- 239000003795 chemical substances by application Substances 0.000 description 10
- 230000006872 improvement Effects 0.000 description 10
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/81024—Applying flux to the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Abstract
The invention discloses a kind of welding method of face-down bonding chip, including:Eutectic solder is applied on the pad of substrate;Scaling powder is applied on the pad coated with eutectic solder;By LED chip upside-down mounting on pad;The eutectic solder on pad is melted, and is electrical connected with LED chip.The invention also discloses a kind of face-down bonding chip.Using the present invention, the step of substituted for applying tin cream in the prior art, when making welding, eutectic solder will not be produced significantly to shrink and pushed, situations such as can effectively avoiding LED chip inclination, position drift, positive and negative end from connecting, be short-circuit, ensure the using effect of face-down bonding chip, simultaneously, required precision to bonder also accordingly reduces, so that the alignment time of the dispensing module of bonder shortens, spot welding effect is higher, saves the time, yield effectively improves, and is more beneficial for the industrialized production of face-down bonding chip.
Description
Technical field
The present invention relates to technical field of electronic components, more particularly to a kind of face-down bonding chip and its welding method.
Background technology
With developing rapidly for semiconductor industry, the application of encapsulation technology is increasingly extensive, and packing forms are more various
Change.Wherein, Flip Chip(Flip-Chip), " crystalline substance that falls encapsulates " or " brilliant package method " are also referred to as, it is both a kind of chip interconnection
Technology, it is a kind of preferably die bonding technology again.The LED light source that Flip Chip is supported has compared with conventional package light source
The characteristics of thermal resistance is low, and voltage is low, and high current density light efficiency is high, comprehensive study show that flip LED light source above has it unique in application
Potentiality and advantage.Specifically, Flip Chip is the deposit solder paste ball in LED chip, and LED chip then is overturn into heating utilizes
The tin cream ball of melting is combined with substrate, forms reliable and stable machinery, electrical connection.
As shown in figure 1, the both positive and negative polarity of LED chip is in the same face, to seek highest efficiency and avoiding both positive and negative polarity short trouble,
Base plate line need to consider chip die bond position when designing;It is glutinous to avoid adjacent chips die bond solder paste from being stained with mutually when circuit designs,
The position apart of LED chip need to be considered., need to be in each die bond pad position during the LED chip welded using existing Flip Chip
Put and put upper tin cream respectively, required precision is high;Welding temperature need to be accurately controlled, avoids the scaling powder in tin cream from volatilizing too fast, makes vapour
Welding assisted agent residuals after change fail to discharge in the tin cream of melting, and tin cream hole ratio is too high after causing die bond;Tin need to strictly be controlled
The granular size of cream, prevent that welding assisted agent residuals tin cream hole ratio after die bond in tin cream void among particles, is made is too high;Need accurate
The amount of tin cream is controlled, makes tin cream thickness between 0.4-0.6mm, tin bulb diameter is slightly less than chip bonding pad area, both sides tin cream amount
With in the same size, when avoiding follow-up welding, pushed because tin cream melts to shrink, cause chip inclination or position drift;Need to accurately it control
The position of tin cream point processed, tin cream point spacing is slightly larger than chip bonding pad spacing, avoid because of tin cream excess or tin cream point position excessively
It is close, the tin cream of upside-down mounting positive and negative end is expanded in melting after being extruded by chip toward both sides, positive and negative end connection, production
Raw short circuit, influence the using effect of face-down bonding chip.
Therefore, high using requirement of the chip of existing Flip Chip welding to machining accuracy, production efficiency is low, production
Product yield is low, can not meet the requirement of actual production.
The content of the invention
The technical problems to be solved by the invention are, there is provided the face-down bonding chip that a kind of required precision is low, yield is high
Welding method, production efficiency can be greatly improved.
The technical problems to be solved by the invention also reside in, there is provided a kind of face-down bonding core simple in construction, weldability is good
Piece.
In order to solve the above-mentioned technical problem, the invention provides a kind of welding method of face-down bonding chip, including:In base
Eutectic solder is applied on the pad of plate;Scaling powder is applied on the pad coated with eutectic solder;By LED chip upside-down mounting in pad
On;The eutectic solder on pad is melted, and is electrical connected with LED chip.
As the improvement of such scheme, the method that scaling powder is applied on the pad coated with eutectic solder includes:
Scaling powder is respectively applied on each pad coated with eutectic solder, each pad is coated by single scaling powder.
As the improvement of such scheme, the method that scaling powder is applied on the pad coated with eutectic solder is also wrapped
Include:Two adjacent both positive and negative polarity pads are divided into one group, scaling powder is applied on every group of both positive and negative polarity pad, makes both positive and negative polarity pad
Coated by same layer scaling powder.
As the improvement of such scheme, the eutectic solder is tin.
As the improvement of such scheme, the eutectic solder is by tin spray process coated on pad.
As the improvement of such scheme, the tin spray process is horizontal tin-spraying.
As the improvement of such scheme, the minimum 75um of spray tin spacing.
As the improvement of such scheme, the thickness of the eutectic solder is 2.5 ~ 25 microns.
As the improvement of such scheme, the pad is copper pad.
Correspondingly, present invention also offers a kind of face-down bonding chip, it is made by above-mentioned welding method.
Implement the present invention, have the advantages that:
The present invention is by the way that eutectic solder is pre-coated with pad, during face-down bonding, then coated with eutectic solder
Scaling powder is applied on pad, the step of substituted for applying tin cream in the prior art.
Wherein, eutectic solder is fixed on pad in advance by horizontal tin-spraying technique, is made in follow-up welding, eutectic weldering
Material will not be produced significantly to shrink and pushed, and can effectively avoid LED chip inclination, position drift, positive and negative end connection, short circuit
Situations such as, the using effect of guarantee face-down bonding chip.
Meanwhile eutectic solder is respectively applied with scaling powder, the mixing of eutectic solder and scaling powder can be avoided, to scaling powder
The control of dosage, position and welding temperature accurately reduces.Specifically, can avoid, because the particle of tin cream is excessive, making welding assisted agent residuals
In in tin cream void among particles, caused by tin cream hole ratio it is too high;It can also avoid the scaling powder in tin cream from volatilizing too fast, make vapour
Welding assisted agent residuals after change fail to discharge in the tin cream of melting, caused by tin cream hole ratio it is too high.
In addition, need each pad to be respectively coated soldering paste in the prior art, and soldering paste is easy during high temperature melting
Shift, required precision is high, causes production efficiency not high, and two adjacent both positive and negative polarity pads are divided into one in the present invention
Group, scaling powder is applied on every group of both positive and negative polarity pad, both positive and negative polarity pad is coated by same layer scaling powder so that scaling powder
Coat area and become big, by the mode of original each corresponding one layer of soldering paste of pad, be converted to the corresponding one layer of scaling powder of each two pad
Mode, therefore, required precision to bonder reduces so that the alignment time of the dispensing module of bonder shortens, dispensing effect
Fruit is higher, saves the time, and yield effectively improves, and is more beneficial for the industrialized production of face-down bonding chip.
Brief description of the drawings
Fig. 1 is the schematic diagram for applying tin cream in the prior art;
Fig. 2 is the first embodiment flow chart of the welding method of face-down bonding chip of the present invention;
Fig. 3 is the schematic diagram that scaling powder is applied in Fig. 3;
Fig. 4 is another schematic diagram that scaling powder is applied in Fig. 3.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
It is described in detail on step ground.Only this is stated, appearance in the text of the invention or the side such as the up, down, left, right, before and after that will appear from, inside and outside
Position word, only on the basis of the accompanying drawing of the present invention, it is not the specific restriction to the present invention.
Fig. 2 is the first embodiment flow chart of the welding method of face-down bonding chip of the present invention, including:
S101, eutectic solder is applied on the pad of substrate;
The eutectic solder can be tin, silver, copper or zinc, but be not limited system;The eutectic solder is preferably tin, institute
It is preferably copper pad to state pad.
The eutectic solder is pre-coated with, on pad, with this reaching and being fixed on tin on pad in advance by tin spray process
Purpose.Wherein, tin spray process is divided into vertical spray tin and horizontal tin-spraying, can by spraying tin present invention preferably employs horizontal tin-spraying
Effectively prevent naked copper face from aoxidizing, and keep solderability.
Specifically, the technological process of horizontal tin-spraying is:
(1)Preceding cleaning treatment;
(2)Preheating;
(3)Scaling powder applies;
(4)Horizontal tin-spraying;
(5)Hot blast knife tin scraping;
(6)Cooling;
(7)Cleaning treatment afterwards.
In the present invention, the thickness of the eutectic solder is 2.5 ~ 25um, greatlys save coating material.
It should be noted that if the thickness of eutectic solder is blocked up, pad can be made to form floating effect, easily shut out the light;
If the thickness of eutectic solder is too thin, hole is easily formed, forms rosin joint, face-down bonding chip is produced open circuit, influences upside-down mounting
The using effect of welding chip.
S102, scaling powder is applied on the pad coated with eutectic solder;
It should be noted that using existing flip-chip bonding process make chip when, need to be in each die bond pad locations
Upper tin cream is put respectively(Tin cream is that the paste mixed by solder powder, scaling powder and other surfactants, thixotropic agent mixes
Compound), required precision height;Welding temperature need to be accurately controlled, avoids the scaling powder in tin cream from volatilizing too fast, makes to help weldering after vaporization
Agent, which is remained in the tin cream of melting, to fail to discharge, and tin cream hole ratio is too high after causing die bond;It need to strictly control the particle of tin cream big
It is small, prevent that welding assisted agent residuals tin cream hole ratio after die bond in tin cream void among particles, is made is too high;Tin cream need to accurately be controlled
Amount, make tin cream thickness between 0.4-0.6mm, tin bulb diameter is slightly less than chip bonding pad area, both sides tin cream amount with the same size,
When avoiding follow-up welding, pushed because tin cream melts to shrink, cause chip inclination or position drift;The position of tin cream point need to accurately be controlled
Put, tin cream point spacing is slightly larger than chip bonding pad spacing, avoid, because tin cream excess or tin cream point position are got too close to, making upside-down mounting just
The tin cream at negative pole both ends is expanded in melting after being extruded by chip toward both sides, positive and negative end connection, produces short circuit, influences down
Fill the using effect of welding chip.Therefore, requirement pole of the chip made using existing flip-chip bonding process to machining accuracy
Height, production efficiency is low, and product yield is low.
In the present invention, it is not required to put tin cream on pad, but tin is separated with scaling powder, is coated respectively.Flip chip bonding
Before connecing, first tin is pre-coated with pad, during face-down bonding, then scaling powder is applied on the pad coated with tin.Due to tin
It is fixed on pad, is made in follow-up welding in advance by horizontal tin-spraying technique, tin will not be produced significantly to shrink and pushed,
Situations such as can effectively avoiding chip inclination, position drift, positive and negative end from connecting, be short-circuit, ensure the use of face-down bonding chip
Effect;Meanwhile tin is respectively applied with scaling powder, the mixing of tin and scaling powder can be avoided, avoids the particle of tin cream excessive, makes to help weldering
Agent is residued in tin cream void among particles, or the scaling powder volatilization in tin cream is too fast, makes the welding assisted agent residuals after vaporization molten
Fail the too high problem of tin cream hole ratio caused by the reasons such as discharge in the tin cream melted.Therefore, make tin separate with scaling powder to be not required to
Accurately to control position and the welding temperature of amount, granular size, the tin cream point of tin cream.
Specifically, Fig. 3 is the schematic diagram that scaling powder is applied in Fig. 2, as shown in Fig. 2 described coated with eutectic solder 4
The method of coating scaling powder 5 is on pad 3:
Scaling powder 5 is respectively applied on each pad 3 coated with eutectic solder 4, each pad 3 is by single scaling powder
5 are coated.
Meanwhile tin cream thickness is in 0.4-0.6mm in the prior art, and the thickness of heretofore described eutectic solder 4 is 2.5
~ 25um, coating material is greatlyd save, reduce production cost.
Fig. 3 is another schematic diagram that scaling powder is applied in Fig. 1, described coated with eutectic in Fig. 3 unlike Fig. 2
The method of coating scaling powder 5 is on the pad 3 of solder 4:
Two adjacent both positive and negative polarity pads 3 are divided into one group, scaling powder 5 is applied on every group of both positive and negative polarity pad 3, is made just
Negative terminal pad 3 is coated by same layer scaling powder 5.
Further, the minimum 75um of tin spacing is sprayed.Spray tin spacing specifically refers to two adjacent both positive and negative polarity pads on substrate
Between spacing, spray the minimum 75um of tin spacing can make to maintain a certain distance between both positive and negative polarity pad, ensure in horizontal tin-spraying
During, prevent positive and negative end from connecting, form short circuit.
Therefore, this packet cladding mode is passed through so that the cladding area of scaling powder 5 becomes big, can further reduce and help weldering
The required precision of the coating position of agent 5, improving production efficiency.
S103, by LED chip upside-down mounting on pad;
S104, the eutectic solder on pad is melted, and be electrical connected with LED chip.
Solder reflow techniques can be used when melting the eutectic solder on pad or use heating plate welding.Wherein, using heating
During plate welding, at least need to use two sections of temperature weldings, two groups of high/low temperature heating plates can be used, being first warming up to 200 DEG C or so makes to help
Solder flux melts, and being warming up to 250 DEG C or so again after about 10 seconds melts tin, removes cooling after about 10 seconds, during which must keep equal
Even heating, fusion temp highest must not exceed 280 DEG C, and weld time is within the 10-20 seconds, excessive temperature or excessively anti-for a long time
And tin cream welding can be caused bad;During using reflow oven welding, optimal welding effect is obtained using reflow oven multi-temperature zone characteristic.
Therefore, the present invention by applying eutectic solder and scaling powder successively on pad, i.e., with eutectic solder and scaling powder
Original soldering paste is replaced, and eutectic solder and scaling powder are respectively applied, eutectic solder is fixed on pad in advance.In fusion temp
Under, scaling powder melts and aids in eutectic solder fusing to realize the connection of chip and substrate, advance accordingly, due to eutectic solder
It is fixed on pad, and eutectic solder does not mix with scaling powder, eutectic solder can be avoided because of position drift caused by welding, waved
Situations such as sending out too fast, be short-circuit, ensure that the welding effect of face-down bonding chip, product yield are high.In addition, needing in the prior art pair
Soldering paste is respectively coated in each pad, and soldering paste easily shifts during high temperature melting, and required precision is high, causes production to be imitated
Rate is not high, and two adjacent both positive and negative polarity pads are divided into one group in the present invention, is applied on every group of both positive and negative polarity pad and helps weldering
Agent, both positive and negative polarity pad is set to be coated by same layer scaling powder so that the cladding area of scaling powder becomes big, will each pad pair originally
The mode of one layer of soldering paste is answered, is converted to the mode of the corresponding one layer of scaling powder of each two pad, therefore, the required precision to bonder
Step-down so that the alignment time of the dispensing module of bonder shortens, and spot welding effect is higher, saves the time, and yield is effectively carried
Height, it is more beneficial for the industrialized production of face-down bonding chip.
Correspondingly, the present invention also provides a kind of face-down bonding chip, and it is made by above-mentioned welding method.The face-down bonding
Chip includes LED chip 1 and substrate 2, and the substrate 2 is provided with pad 3, and the face-down bonding of LED chip 1 is on substrate 2, institute
State and be electrical connected between LED chip 1 and substrate 2 by the eutectic solder 4 on pad 3.
Specifically, the thickness of the eutectic solder 4 is 2.5 ~ 25um.If the it should be noted that thickness mistake of eutectic solder 4
Thickness, pad 3 can be made to form floating effect, easily shut out the light;If the thickness of eutectic solder 4 is too thin, hole, shape are easily formed
Into rosin joint, face-down bonding chip is produced open circuit, influence the using effect of face-down bonding chip.
With reference to specific embodiment, the present invention is described in further detail.
Embodiment one
(1)By horizontal tin-spraying technique on the copper pad of substrate coated with tin, the thickness of tin is 20um;
(2)Scaling powder is applied on the copper pad coated with tin by the dispensing module of bonder;
(3)By LED chip upside-down mounting on copper pad, making scaling powder be coated on LED chip surrounding;
(4)The tin on copper pad is melted using solder reflow techniques, and is electrical connected with LED chip, welds LED chip
It is connected on the copper pad of substrate, forms face-down bonding chip.
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (4)
- A kind of 1. welding method of face-down bonding chip, it is characterised in that including:Eutectic solder, the minimum 75um of spray tin spacing, the eutectic weldering are applied on the pad of substrate by horizontal tin-spraying technique Expect for tin;Scaling powder is applied on the pad coated with eutectic solder;By LED chip upside-down mounting on pad;The eutectic solder on pad is melted, and is electrical connected with LED chip;The method that scaling powder is applied on the pad coated with eutectic solder includes:Two adjacent both positive and negative polarity pads are drawn It is divided into one group, applies scaling powder on every group of both positive and negative polarity pad, both positive and negative polarity pad is coated by same layer scaling powder.
- 2. the welding method of face-down bonding chip as claimed in claim 1, it is characterised in that the thickness of the eutectic solder is 2.5 ~ 25 microns.
- 3. the welding method of face-down bonding chip as claimed in claim 1, it is characterised in that the pad is copper pad.
- 4. a kind of face-down bonding chip, it is characterised in that it is made as the welding method described in any one of claim 1 ~ 3.
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CN112382705B (en) * | 2020-10-28 | 2023-03-21 | 长春希龙显示技术有限公司 | Mirco-LED batch transfer die bonding welding method and production equipment thereof |
CN112349597A (en) * | 2020-11-05 | 2021-02-09 | 南方电网科学研究院有限责任公司 | Chip welding method |
CN113011031B (en) * | 2021-03-24 | 2022-03-25 | 西南石油大学 | Optimal design method based on reflow furnace temperature curve |
CN113113395A (en) * | 2021-03-25 | 2021-07-13 | Tcl华星光电技术有限公司 | Substrate and method for manufacturing light-emitting substrate |
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Denomination of invention: A flip chip soldering method and its soldering method Effective date of registration: 20231122 Granted publication date: 20180306 Pledgee: Guangdong Nanhai Rural Commercial Bank branch branch of Limited by Share Ltd. Pledgor: FOSHAN EVERCORE OPTOELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2023980066635 |