CN112349597A - Chip welding method - Google Patents
Chip welding method Download PDFInfo
- Publication number
- CN112349597A CN112349597A CN202011224306.7A CN202011224306A CN112349597A CN 112349597 A CN112349597 A CN 112349597A CN 202011224306 A CN202011224306 A CN 202011224306A CN 112349597 A CN112349597 A CN 112349597A
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- Prior art keywords
- substrate
- chip
- laser
- welded
- point
- Prior art date
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- 238000003466 welding Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 229910000679 solder Inorganic materials 0.000 claims abstract description 18
- 230000005496 eutectics Effects 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 230000001154 acute effect Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a chip welding method, which comprises the following steps: 1) preparing a substrate for bearing a chip, emitting laser from a surface to be welded of the substrate at a preset angle by adopting a laser to form an irradiation point, and receiving the laser reflected by the irradiation point on the substrate by adopting a charge coupled device; 2) translating the substrate, enabling an irradiation point of the laser to pass through a region to be welded of the substrate, and receiving the laser reflected by the irradiation point by the charge coupled device; 3) calculating the warping degree of each point on a to-be-welded area of the substrate; 4) clamping a substrate which meets the warping degree standard by using a clamp, and coating eutectic solder on a bonding pad of the substrate; 5) manufacturing spherical salient points of the chip; 6) when the diameter of the flat part is judged to be less than or equal to the radius of the spherical convex point, the next step is carried out; 7) taking the chip and inversely installing the chip on the bonding pad to enable the eutectic solder on the bonding pad to be melted and electrically connected with the chip; the chip welding method has the advantages of high welding quality and high welding yield.
Description
Technical Field
The invention relates to a chip welding method.
Background
A chip is a microelectronic device or component. The transistor, the resistor, the capacitor, the inductor and other elements and wires required in a circuit are interconnected together by adopting a certain process, are manufactured on a small or a plurality of small semiconductor wafers or medium substrates, and are then packaged in a tube shell to form a micro structure with the required circuit function; all the elements are structurally integrated, so that the electronic elements are greatly miniaturized, low in power consumption, intelligent and high in reliability.
The chip welding is one of the preparation processes, and the existing chip welding has the problems of poor welding quality and low welding yield, so that the existing production requirements are difficult to meet.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a chip welding method with high welding quality and high welding yield.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a method of die bonding comprising the steps of:
1) preparing a substrate for bearing a chip, emitting laser from a surface to be welded of the substrate at a preset angle by adopting a laser to form an irradiation point, and receiving the laser reflected by the irradiation point on the substrate by adopting a charge coupled device;
2) translating the substrate, enabling an irradiation point of the laser to pass through a region to be welded of the substrate, and receiving the laser reflected by the irradiation point by the charge coupled device;
3) calculating the warping degree of each point on a to-be-welded area of the substrate according to a preset angle of the laser, the position relation between the laser and the charge coupled element and the distance of the position of the reflected laser which is injected into the charge coupled element and deviates from a preset position;
4) clamping a substrate which meets the warping degree standard by using a clamp, and coating eutectic solder on a bonding pad of the substrate;
5) manufacturing spherical bumps of the chip, picking up the chip, coating soldering flux on the spherical bumps, and then inversely installing the spherical bumps of the chip on the bonding pad to flatten the top ends of the spherical bumps on the chip;
6) measuring the diameter of the flat part at the top end of the spherical convex point, comparing the diameter with the radius of the spherical convex point, and performing the next step when the diameter of the flat part is judged to be less than or equal to the radius of the spherical convex point;
7) and taking the chip to be inversely installed on the bonding pad, melting the eutectic solder on the bonding pad, and electrically connecting the eutectic solder with the chip.
Preferably, in step 1), the substrate is a processed board body with a circuit layer and a solder mask layer formed on the surface.
Further, in step 2), the region to be welded is arranged in a circle, and the substrate is translated by using a spiral route which increases outwards with the central point of the region to be welded as a starting point.
Further, in step 2), the region to be welded is rectangular, and the substrate is translated by taking corner points of the region to be welded as starting points and adopting an inward-progressive loop-shaped route.
Preferably, in step 3), the preset angle used is an acute angle.
Further, in step 3), the calculation formula of the warp degree is: warp = a distance by which the reflected laser beam is incident on the ccd element and is shifted from a predetermined position x a cosine of a predetermined angle.
Further, in step 3), after the warpage of the substrate is determined not to meet the standard, the substrate not meeting the warpage standard is recovered and reproduced, and the operation in step 1) is repeated on the reproduced substrate.
Preferably, in step 6), when the diameter of the flat portion is determined to be larger than the radius of the spherical bump, the parameters are adjusted after detection, and the operation in step 6) is repeated after reproduction is completed.
The invention has the beneficial effects that:
the method comprises the steps of firstly carrying out warping degree test on a to-be-welded surface of a substrate, then carrying out wettability test on spherical salient points of a chip to be welded, welding after the two are ensured to be in accordance with standards, so that quality control of materials in a chip welding process is realized, on one hand, the substrate with large warping degree is eliminated, the condition that stress is uneven on the chip in the welding process is avoided, on the other hand, the chip with insufficient wettability is eliminated, the condition that the chip or the substrate is broken due to overlarge stress in welding is avoided, and the yield and quality of the produced chip are improved through the strict control of the quality of the welding materials.
Detailed Description
The present invention is further described with reference to specific examples to enable those skilled in the art to better understand the present invention and to practice the same, but the examples are not intended to limit the present invention.
Example 1
A method of die bonding comprising the steps of:
1) preparing a substrate for bearing a chip, emitting laser from a surface to be welded of the substrate at a preset angle by adopting a laser to form an irradiation point, and receiving the laser reflected by the irradiation point on the substrate by adopting a charge coupled device;
2) translating the substrate, enabling an irradiation point of the laser to pass through a region to be welded of the substrate, and receiving the laser reflected by the irradiation point by the charge coupled device;
3) calculating the warping degree of each point on a to-be-welded area of the substrate according to a preset angle of the laser, the position relation between the laser and the charge coupled element and the distance of the position of the reflected laser which is injected into the charge coupled element and deviates from a preset position;
4) clamping a substrate which meets the warping degree standard by using a clamp, and coating eutectic solder on a bonding pad of the substrate;
5) manufacturing spherical bumps of the chip, picking up the chip, coating soldering flux on the spherical bumps, and then inversely installing the spherical bumps of the chip on the bonding pad to flatten the top ends of the spherical bumps on the chip;
6) measuring the diameter of the flat part at the top end of the spherical convex point, comparing the diameter with the radius of the spherical convex point, and performing the next step when the diameter of the flat part is judged to be less than or equal to the radius of the spherical convex point;
7) and taking the chip to be inversely installed on the bonding pad, melting the eutectic solder on the bonding pad, and electrically connecting the eutectic solder with the chip.
In step 1), the substrate is a processed board body with a circuit layer and a solder mask layer formed on the surface.
In step 2), the area to be welded is arranged in a circle, and the substrate translates by taking the central point of the area to be welded as a starting point and adopting an outward increasing spiral route.
In step 3), the adopted preset angle is an acute angle.
In step 3), the formula for calculating the warp degree is: warp = a distance by which the reflected laser beam is incident on the ccd element and is shifted from a predetermined position x a cosine of a predetermined angle.
In step 3), when the warping degree of the substrate is judged not to meet the standard, the substrate which does not meet the warping degree standard is withdrawn and reproduced, and the operation in step 1) is repeated on the reproduced substrate.
In step 6), when the diameter of the flat part is judged to be larger than the radius of the spherical convex point, the parameters are adjusted after the detection, and the operation in step 6) is repeated after the reproduction is finished.
Example 2
A method of die bonding comprising the steps of:
1) preparing a substrate for bearing a chip, emitting laser from a surface to be welded of the substrate at a preset angle by adopting a laser to form an irradiation point, and receiving the laser reflected by the irradiation point on the substrate by adopting a charge coupled device;
2) translating the substrate, enabling an irradiation point of the laser to pass through a region to be welded of the substrate, and receiving the laser reflected by the irradiation point by the charge coupled device;
3) calculating the warping degree of each point on a to-be-welded area of the substrate according to a preset angle of the laser, the position relation between the laser and the charge coupled element and the distance of the position of the reflected laser which is injected into the charge coupled element and deviates from a preset position;
4) clamping a substrate which meets the warping degree standard by using a clamp, and coating eutectic solder on a bonding pad of the substrate;
5) manufacturing spherical bumps of the chip, picking up the chip, coating soldering flux on the spherical bumps, and then inversely installing the spherical bumps of the chip on the bonding pad to flatten the top ends of the spherical bumps on the chip;
6) measuring the diameter of the flat part at the top end of the spherical convex point, comparing the diameter with the radius of the spherical convex point, and performing the next step when the diameter of the flat part is judged to be less than or equal to the radius of the spherical convex point;
7) and taking the chip to be inversely installed on the bonding pad, melting the eutectic solder on the bonding pad, and electrically connecting the eutectic solder with the chip.
In step 1), the substrate is a processed board body with a circuit layer and a solder mask layer formed on the surface.
In the step 2), the area to be welded is rectangular, and the substrate is translated by taking the corner points of the area to be welded as a starting point and adopting an inward-progressive loop-shaped route.
In step 3), the adopted preset angle is an acute angle.
In step 3), the formula for calculating the warp degree is: warp = a distance by which the reflected laser beam is incident on the ccd element and is shifted from a predetermined position x a cosine of a predetermined angle.
In step 3), when the warping degree of the substrate is judged not to meet the standard, the substrate which does not meet the warping degree standard is withdrawn and reproduced, and the operation in step 1) is repeated on the reproduced substrate.
In step 6), when the diameter of the flat part is judged to be larger than the radius of the spherical convex point, the parameters are adjusted after the detection, and the operation in step 6) is repeated after the reproduction is finished.
The invention has the beneficial effects that:
the method comprises the steps of firstly carrying out warping degree test on a to-be-welded surface of a substrate, then carrying out wettability test on spherical salient points of a chip to be welded, welding after the two are ensured to be in accordance with standards, so that quality control of materials in a chip welding process is realized, on one hand, the substrate with large warping degree is eliminated, the condition that stress is uneven on the chip in the welding process is avoided, on the other hand, the chip with insufficient wettability is eliminated, the condition that the chip or the substrate is broken due to overlarge stress in welding is avoided, and the yield and quality of the produced chip are improved through the strict control of the quality of the welding materials.
The above-described embodiments of the present invention are not intended to limit the scope of the present invention, and the embodiments of the present invention are not limited thereto, and various other modifications, substitutions and alterations can be made to the above-described structure of the present invention without departing from the basic technical concept of the present invention as described above, according to the common technical knowledge and conventional means in the field of the present invention.
Claims (8)
1. A chip welding method is characterized by comprising the following steps:
1) preparing a substrate for bearing a chip, emitting laser from a surface to be welded of the substrate at a preset angle by adopting a laser to form an irradiation point, and receiving the laser reflected by the irradiation point on the substrate by adopting a charge coupled device;
2) translating the substrate, enabling an irradiation point of the laser to pass through a region to be welded of the substrate, and receiving the laser reflected by the irradiation point by the charge coupled device;
3) calculating the warping degree of each point on a to-be-welded area of the substrate according to a preset angle of the laser, the position relation between the laser and the charge coupled element and the distance of the position of the reflected laser which is injected into the charge coupled element and deviates from a preset position;
4) clamping a substrate which meets the warping degree standard by using a clamp, and coating eutectic solder on a bonding pad of the substrate;
5) manufacturing spherical bumps of the chip, picking up the chip, coating soldering flux on the spherical bumps, and then inversely installing the spherical bumps of the chip on the bonding pad to flatten the top ends of the spherical bumps on the chip;
6) measuring the diameter of the flat part at the top end of the spherical convex point, comparing the diameter with the radius of the spherical convex point, and performing the next step when the diameter of the flat part is judged to be less than or equal to the radius of the spherical convex point;
7) and taking the chip to be inversely installed on the bonding pad, melting the eutectic solder on the bonding pad, and electrically connecting the eutectic solder with the chip.
2. The method of bonding a chip according to claim 1, wherein: in step 1), the substrate is a processed board body with a circuit layer and a solder mask layer formed on the surface.
3. The method of bonding a chip according to claim 2, wherein: in step 2), the area to be welded is arranged in a circle, and the substrate translates by taking the central point of the area to be welded as a starting point and adopting an outward increasing spiral route.
4. The method of bonding a chip according to claim 2, wherein: in the step 2), the area to be welded is rectangular, and the substrate is translated by taking the corner points of the area to be welded as a starting point and adopting an inward-progressive loop-shaped route.
5. A method of bonding chips according to claim 3 or 4, characterized in that: in step 3), the adopted preset angle is an acute angle.
6. The method of claim 5, wherein: in step 3), the formula for calculating the warp degree is: warp = a distance by which the reflected laser beam is incident on the ccd element and is shifted from a predetermined position x a cosine of a predetermined angle.
7. The method of claim 6, wherein: in step 3), when the warping degree of the substrate is judged not to meet the standard, the substrate which does not meet the warping degree standard is withdrawn and reproduced, and the operation in step 1) is repeated on the reproduced substrate.
8. The method of claim 5, wherein: in step 6), when the diameter of the flat part is judged to be larger than the radius of the spherical convex point, the parameters are adjusted after the detection, and the operation in step 6) is repeated after the reproduction is finished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011224306.7A CN112349597A (en) | 2020-11-05 | 2020-11-05 | Chip welding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011224306.7A CN112349597A (en) | 2020-11-05 | 2020-11-05 | Chip welding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112349597A true CN112349597A (en) | 2021-02-09 |
Family
ID=74428446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011224306.7A Pending CN112349597A (en) | 2020-11-05 | 2020-11-05 | Chip welding method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112349597A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5184768A (en) * | 1990-11-29 | 1993-02-09 | Motorola, Inc. | Solder interconnection verification |
| CN101623786A (en) * | 2008-07-10 | 2010-01-13 | 株式会社日立制作所 | Soldering method and soldering apparatus |
| CN104241154A (en) * | 2013-06-14 | 2014-12-24 | 无锡华润安盛科技有限公司 | Flip chip welding spot wettability judgment method and chip welding method |
| CN104315991A (en) * | 2014-10-31 | 2015-01-28 | 合肥鑫晟光电科技有限公司 | Device and method for measuring warping degree of substrate, touch screen and manufacturing method of touch screen |
| JP2015068679A (en) * | 2013-09-27 | 2015-04-13 | 住友金属鉱山株式会社 | Evaluation method of maximum warpage in two-layer plated substrate |
| CN104993040A (en) * | 2015-05-26 | 2015-10-21 | 佛山市中昊光电科技有限公司 | Flip-chip and welding method thereof |
| CN209767240U (en) * | 2019-05-30 | 2019-12-10 | 南方电网科学研究院有限责任公司 | Power distribution network terminal based on safety chip and power distribution network system |
-
2020
- 2020-11-05 CN CN202011224306.7A patent/CN112349597A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5184768A (en) * | 1990-11-29 | 1993-02-09 | Motorola, Inc. | Solder interconnection verification |
| CN101623786A (en) * | 2008-07-10 | 2010-01-13 | 株式会社日立制作所 | Soldering method and soldering apparatus |
| CN104241154A (en) * | 2013-06-14 | 2014-12-24 | 无锡华润安盛科技有限公司 | Flip chip welding spot wettability judgment method and chip welding method |
| JP2015068679A (en) * | 2013-09-27 | 2015-04-13 | 住友金属鉱山株式会社 | Evaluation method of maximum warpage in two-layer plated substrate |
| CN104315991A (en) * | 2014-10-31 | 2015-01-28 | 合肥鑫晟光电科技有限公司 | Device and method for measuring warping degree of substrate, touch screen and manufacturing method of touch screen |
| CN104993040A (en) * | 2015-05-26 | 2015-10-21 | 佛山市中昊光电科技有限公司 | Flip-chip and welding method thereof |
| CN209767240U (en) * | 2019-05-30 | 2019-12-10 | 南方电网科学研究院有限责任公司 | Power distribution network terminal based on safety chip and power distribution network system |
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Application publication date: 20210209 |
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