CN213340422U - Easily-welded inverted Mini/Micro-LED chip - Google Patents
Easily-welded inverted Mini/Micro-LED chip Download PDFInfo
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- CN213340422U CN213340422U CN202022331210.2U CN202022331210U CN213340422U CN 213340422 U CN213340422 U CN 213340422U CN 202022331210 U CN202022331210 U CN 202022331210U CN 213340422 U CN213340422 U CN 213340422U
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Abstract
The utility model discloses an easy welded flip-chip Mini Micro-LED chip, including the substrate, locate the light-emitting structure on the substrate, locate the electrode on the light-emitting structure and locate the welding layer on the electrode. The utility model discloses a Mini Micro-LED chip easily welds the encapsulation, and packaging efficiency is high, the yield is high, with low costs.
Description
Technical Field
The utility model relates to a light emitting diode technical field especially relates to an easy welded flip-chip Mini/Micro-LED chip.
Background
The flip LED chip has the characteristic of no packaging, so that the wire bonding time and the cost of a downstream packaging factory are greatly reduced. Although the wire bonding step can be omitted, solder and flux are applied to the electrodes to electrically connect the electrodes of the LED chip and the substrate.
The Mini/Micro-LED chip has smaller bonding pad, less solder paste amount and smaller chip, and has higher requirements on the technological parameters of welding equipment, temperature uniformity and the like. Problems with current welding include: 1. chip displacement: movement after die bonding is required to be reduced; 2. chip rotation: because the distance between the Mini/Micro-LED chips is only 0.8mm, 0.6mm, 0.4mm or even smaller, the chips are easy to rotate under the atmosphere environment in the welding process, and the influence is bad; 3. the void ratio is high: after the prior nitrogen reflow soldering, the low voidage solder paste is adopted, and the voidage after the soldering is controlled to be about 10 percent; in the common solder paste, the voidage after soldering can reach more than 15%, and the voidage is too high, so that the product is poor due to the heat conduction effect or the reliability problem after long-term use. A circuit board with 9000 chips is a big thing with several defects that result in a defective final product.
In addition, the existing coating methods of the solder and the soldering flux are generally divided into a solder paste dispensing method and a solder paste brushing method, wherein the solder paste dispensing method has the advantages of high speed, low precision, large glue consumption, easy overflow and easy displacement and short circuit of a chip; the solder paste brushing method has high precision, but slow speed and high machine price. Therefore, the step of brushing the solder paste on the Mini/Micro-LED chip can greatly obstruct the pushing of the Mini/Micro-LED chip flip product.
Disclosure of Invention
The utility model aims to solve the technical problem that an easily welded flip-chip Mini/Micro-LED chip is provided, easily weld the encapsulation, and packaging efficiency is high, the yield is high, with low costs.
In order to solve the technical problem, the utility model provides an easily welded flip Mini/Micro-LED chip, which comprises a substrate, a light-emitting structure arranged on the substrate, an electrode arranged on the light-emitting structure and a welding layer arranged on the electrode;
the welding layer comprises a welding flux layer, a welding-assistant layer arranged on the welding flux layer and a protective layer arranged on the welding flux layer and the welding-assistant layer and wrapping the welding-assistant layer; wherein the content of the first and second substances,
the solder layer is made of solder for soldering the electrode and the substrate;
the welding-assistant layer is made of soldering flux.
As a modification of the above, the material of the solder layer is selected from one of tin-lead solder, silver solder, copper solder and pure tin solder.
As an improvement of the scheme, the viscosity of the soldering flux is 200-600 kcps, and the residue after reflow is less than 50%.
As a modification of the scheme, the material of the welding assistant layer is selected from rosin or resin.
As a modification of the above, the resin is a thermosetting resin, and is selected from one of unsaturated polyester, vinyl ester, epoxy type maleimide resin, phenolic type maleimide resin, bismaleimide resin and polyimide resin.
As an improvement of the scheme, the thickness of the solder layer is 10-100 μm.
As an improvement of the scheme, the thickness of the welding assistant layer is 2-20 mu m.
As a modification of the above, the material of the protective layer is selected from one of polyethylene, ethylene tetrafluoroethylene, and wax.
As an improvement of the scheme, the thickness of the protective layer is 1-10 mu m.
As an improvement of the scheme, the size of the flip Mini/Micro-LED chip is less than 100 μm.
Implement the utility model discloses, following beneficial effect has:
in LED's wafer stage, the utility model discloses simultaneously at a plurality of light-emitting structure form the solder layer on the electrode, compare with LED chip point tin cream one by one with the packaging method of brushing tin cream, efficiency improves greatly, and can be through the thickness on control solder layer, the quantity of accurate control tin cream avoids the tin cream quantity too much or the undersize, effectively guarantees the cohesion of chip and base plate, prevents the rotatory aversion of chip simultaneously to improve the welding yield of LED chip and base plate.
In addition, the welding-assistant layer of the utility model is arranged on the welding flux layer, further fills the gap of the thin part between the electrode and the substrate, and the voidage after welding is less than 10 percent; more importantly, the welding assistant layer can form a firm carbon-containing compound with the metal on the substrate during welding, and the bonding strength of the welding assistant layer and the metal on the substrate is further improved.
Further, the utility model discloses a protective layer is located on the solder layer and helps the solder layer and will help the solder layer parcel for the protection helps the solder layer, prevents that adhesion such as dust impurity from helping on the solder layer, guarantees the performance of helping the solder layer, simultaneously so that store the transportation.
Drawings
FIG. 1 is a schematic diagram of the inverted Mini/Micro-LED chip of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the present invention provides an easily soldered flip Mini/Micro-LED chip, which comprises a substrate 10, a light emitting structure 20 disposed on the substrate 10, an electrode 30 disposed on the light emitting structure 20, and a soldering layer 40 disposed on the electrode 30, wherein the size of the flip Mini/Micro-LED chip is smaller than 100 μm.
The soldering layer 40 includes a solder layer 41, a solder assistant layer 42 disposed on the solder layer 41, and a passivation layer 43 disposed on the solder layer 41 and the solder assistant layer 42 and covering the solder assistant layer 42.
The solder layer of the present invention is used to bond the electrode and the substrate, and therefore the material of the solder layer must be a conductive material; in addition, in order to improve the bonding force between the electrode and the substrate, the solder layer is also used for filling up the gap between the electrode and the substrate, reducing the unevenness between the chip and the substrate, reducing the void ratio between the chip and the substrate, and increasing the reliability of the solder layer, so the material of the solder layer must have certain softness. Preferably, the material of the solder layer is selected from one or more of tin-lead solder, silver solder, copper solder and pure tin solder.
The thickness of the solder layer plays an important role in subsequent welding and packaging of the chip, and if the thickness of the solder layer is too thick, the solder layer is easy to overflow during welding, so that the chip leaks electricity; if the thickness of the solder layer is too small, the chip and the substrate are not firmly bonded, and the bonding yield is reduced.
Preferably, the thickness of the solder layer is 10 to 100 μm. More preferably, the thickness of the solder layer is 20-80 μm. Optimally, the thickness of the solder layer is 40-60 mu m.
Specifically, the utility model discloses a yellow light coating by vaporization or the mode of steel mesh printing form the solder layer on the electrode. In LED's wafer stage, the utility model discloses simultaneously at a plurality of light-emitting structure form the solder layer on the electrode, compare with LED chip point tin cream one by one with the packaging method of brushing tin cream, efficiency improves greatly, and can be through the thickness on control solder layer, the quantity of accurate control tin cream avoids the tin cream quantity too much or the undersize, effectively guarantees the cohesion of chip and base plate, prevents the rotatory aversion of chip simultaneously to improve the welding yield of LED chip and base plate.
The existing welding method of the flip LED chip is to mix solder and soldering flux to form solder paste, then to coat the solder paste on a welding pad of a substrate, then to weld the flip LED chip, and finally to perform reflow welding. Because the solder and the soldering flux are mixed in the prior method, the soldering flux in the soldering paste can be volatilized completely to remove the oxides of the bonding pad and the chip electrode by carrying out long-time heat preservation in the reflow soldering process.
The utility model discloses separately form solder layer and welding aid layer with solder and scaling powder, wherein, the utility model discloses a welding aid layer sets up on the solder layer, can fill the space of detail between electrode and the base plate, and the voidage is less than 10% after the welding; more importantly, the welding assistant layer can form a firm carbon-containing compound with the metal on the substrate during welding, and the bonding strength of the welding assistant layer and the metal on the substrate is further improved.
In addition, the utility model discloses a solder layer and helping the solder layer separately, when the reflow soldering, help the solder layer can take place to melt earlier than the solder layer, form firm carbon-containing compound with the metal on the base plate to fully fill in the space of detail between electrode and base plate. Because the utility model discloses can adjust the thickness of helping the layer through technology to the quantity of control scaling powder, consequently can shorten the heat preservation time of reflow soldering in-process.
Specifically, the utility model discloses a help the welding layer and make by the scaling powder, the viscosity of scaling powder is 200 ~ 600kcps, and the residue after the rewelding is less than 50%.
The viscosity of the flux plays an important role in the soldering of the chip, and if the viscosity of the flux is too low, the flux is difficult to form on a solder layer, the thickness of the flux is difficult to control, and the flux is easy to overflow during reflow soldering; if the viscosity of the flux is too high, it is difficult to sufficiently fill the gap in the fine portion between the electrode and the substrate during reflow soldering.
Theoretically, the smaller the flux reflow residue is, the better, because the utility model discloses a flux has formed at the chip stage, and can be through controlling its thickness, consequently the utility model discloses flux reflow residue is as long as be less than 50% just can.
Preferably, the viscosity of the soldering flux is 300-500 kcps, and the residue after reflow is less than 40%.
Preferably, the viscosity of the soldering flux is 400-450 kcps, and the residue after reflow is less than 40%.
Wherein the material of the welding assistant layer is selected from rosin and/or resin.
The resin is thermosetting resin and is selected from one or more of unsaturated polyester, vinyl ester, epoxy maleimide resin, phenolic maleimide resin, bismaleimide resin and polyimide resin, the resin can be quickly hardened by heating and is easy to volatilize, and the resin becomes conductive carbon atoms at high temperature, so that gaps between the electrode and the substrate can be effectively filled. The material can be formed by spin coating or spraying, and the manufacturing method is simple.
Preferably, the rosin contains 1 to 5 mass% of a halogen compound. The utility model discloses add a certain amount of halogen compound in rosin, can make the metal on scaling powder and the base plate form firmer carbon-containing compound, further improve bonding strength between them. Wherein, the halogen compound is a compound containing one or more elements of fluorine, chlorine, bromine, iodine and astatine, and the halogen has higher activity, so the reaction can be accelerated.
The thickness of the welding-assistant layer plays an important role in the subsequent packaging and welding of the chip, and if the thickness of the welding-assistant layer is too thick, the welding easily overflows to cause electric leakage of the chip; if the thickness of the solder mask layer is too small, the chip and the substrate are not firmly bonded, and the yield of soldering is reduced.
Preferably, the thickness of the welding assistant layer is 2-20 μm. Preferably, the thickness of the welding-assistant layer is 5-15 μm. Optimally, the thickness of the welding assistant layer is 8-15 mu m.
Because it has certain viscosity to help the solder layer, in order to avoid helping on the solder layer some impurity of adhesion, the influence helps the performance of solder layer, the utility model discloses a solder layer is located to the protective layer and on helping the solder layer and will help the solder layer parcel to be convenient for store the transportation. Wherein the protective layer is made of a non-stick substance.
Preferably, the material of the protective layer is selected from one of polyethylene, ethylene-tetrafluoroethylene, and wax. The material can be formed in a spin coating or spraying mode, the manufacturing method is simple, the welding-assistant layer is effectively protected, the welding-assistant layer and welding cannot be affected, and specifically, the material can be instantly shrunk into a small molecular state at high temperature, and welding cannot be affected.
Wherein the thickness of the protective layer is 1-10 μm. Preferably, the thickness of the protective layer is 3-7 μm. More preferably, the thickness of the protective layer is 4-6 μm.
Correspondingly, the utility model also provides a manufacturing method of flip Mini/Micro-LED chip of easily welding, including following step:
firstly, forming a light-emitting structure on a substrate;
specifically, a plurality of light emitting structures are arranged on the substrate.
Secondly, forming an electrode on the light-emitting structure;
wherein, be equipped with the electrode on every light emitting structure, the electrode includes positive electrode and negative electrode, the electrode can be current electrode structure, the utility model discloses do not do specifically and restrict.
Thirdly, forming a solder layer on the electrode;
the solder layer of the present invention is used to bond the electrode and the substrate, and therefore the material of the solder layer must be a conductive material; in addition, in order to improve the bonding force between the electrode and the substrate, the solder layer is also used for filling up the gap between the electrode and the substrate, reducing the unevenness between the chip and the substrate, reducing the void ratio between the chip and the substrate, and increasing the reliability of the solder layer, so the material of the solder layer must have certain softness. Preferably, the material of the solder layer is selected from one or more of tin-lead solder, silver solder, copper solder and pure tin solder.
The thickness of the solder layer plays an important role in the subsequent packaging and welding of the chip, and if the thickness of the solder layer is too thick, the solder layer is easy to overflow during welding, so that the chip leaks electricity; if the thickness of the solder layer is too small, the chip and the substrate are not firmly bonded, and the bonding yield is reduced.
Preferably, the thickness of the solder layer is 10 to 100 μm. More preferably, the thickness of the solder layer is 20-80 μm. Optimally, the thickness of the solder layer is 40-60 mu m.
Specifically, the utility model discloses a yellow light coating by vaporization or the mode of steel mesh printing form the solder layer on the electrode. In LED's wafer stage, the utility model discloses simultaneously at a plurality of light-emitting structure form the solder layer on the electrode, compare with LED chip point tin cream one by one with the packaging method of brushing tin cream, efficiency improves greatly, and can be through the thickness on control solder layer, the quantity of accurate control tin cream avoids the tin cream quantity too much or the undersize, effectively guarantees the cohesion of chip and base plate, prevents the rotatory aversion of chip simultaneously to improve the welding yield of LED chip and base plate.
Fourthly, forming a soldering assistant layer on the solder layer;
the utility model discloses a help the welding layer setting on the solder layer, further fill the space of detail between electrode and the base plate, more important, help the welding layer can form firm carbon-containing compound with the metal on the base plate during welding, further improve bonding strength between them.
The existing welding method of the flip LED chip is to mix solder and soldering flux to form solder paste, then to coat the solder paste on a welding pad of a substrate, then to weld the flip LED chip, and finally to perform reflow welding. Because the solder and the soldering flux are mixed in the prior method, the soldering flux in the soldering paste can be volatilized completely to remove the oxides of the bonding pad and the chip electrode by carrying out long-time heat preservation in the reflow soldering process.
The utility model discloses separately form solder layer and welding aid layer with solder and scaling powder, wherein, the utility model discloses a welding aid layer sets up on the solder layer, can fill the space of detail between electrode and the base plate, and the voidage is less than 10% after the welding; more importantly, the welding assistant layer can form a firm carbon-containing compound with the metal on the substrate during welding, and the bonding strength of the welding assistant layer and the metal on the substrate is further improved.
In addition, the utility model discloses a solder layer and helping the solder layer separately, when the reflow soldering, help the solder layer can take place to melt earlier than the solder layer, form firm carbon-containing compound with the metal on the base plate to fully fill in the space of detail between electrode and base plate. Because the utility model discloses can adjust the thickness of helping the layer through technology to the quantity of control scaling powder, consequently can shorten the heat preservation time of reflow soldering in-process.
Specifically, the utility model discloses a help the welding layer and make by the scaling powder, the viscosity of scaling powder is 200 ~ 600kcps, and the residue after the rewelding is less than 50%.
The viscosity of the flux plays an important role in the soldering of the chip, and if the viscosity of the flux is too low, the flux is difficult to form on a solder layer, the thickness of the flux is difficult to control, and the flux is easy to overflow during reflow soldering; if the viscosity of the flux is too high, it is difficult to sufficiently fill the gap in the fine portion between the electrode and the substrate during reflow soldering.
Theoretically, the smaller the flux reflow residue is, the better, because the utility model discloses a flux has formed at the chip stage, and can be through controlling its thickness, consequently the utility model discloses flux reflow residue is as long as be less than 50% just can.
Preferably, the viscosity of the soldering flux is 300-500 kcps, and the residue after reflow is less than 40%.
Preferably, the viscosity of the soldering flux is 400-450 kcps, and the residue after reflow is less than 40%.
Wherein the material of the welding assistant layer is selected from rosin and/or resin.
The resin is thermosetting resin and is selected from one or more of unsaturated polyester, vinyl ester, epoxy maleimide resin, phenolic maleimide resin, bismaleimide resin and polyimide resin, the resin can be quickly hardened by heating and is easy to volatilize, and the resin becomes conductive carbon atoms at high temperature, so that gaps between the electrode and the substrate can be effectively filled. The material can be formed by spin coating or spraying, and the manufacturing method is simple.
Preferably, the rosin contains 1 to 5 mass% of a halogen compound. The utility model discloses add a certain amount of halogen compound in rosin, can make the metal on scaling powder and the base plate form firmer carbon-containing compound, further improve bonding strength between them. Wherein, the halogen compound is a compound containing one or more elements of fluorine, chlorine, bromine, iodine and astatine, and the halogen has higher activity, so the reaction can be accelerated.
Specifically, the solder-assisting layer is formed on the solder layer by spin coating or spraying.
The thickness of the welding-assistant layer plays an important role in the subsequent packaging and welding of the chip, and if the thickness of the welding-assistant layer is too thick, the welding easily overflows to cause electric leakage of the chip; if the thickness of the solder mask layer is too small, the chip and the substrate are not firmly bonded, and the yield of soldering is reduced.
Preferably, the thickness of the welding assistant layer is 2-20 μm. Preferably, the thickness of the welding-assistant layer is 5-15 μm. Optimally, the thickness of the welding assistant layer is 8-15 mu m.
Fifthly, forming a protective layer on the solder layer and the soldering assistant layer, wherein the protective layer wraps the soldering assistant layer;
because it has certain viscosity to help the solder layer, in order to avoid helping on the solder layer some impurity of adhesion, the influence helps the performance of solder layer, the utility model discloses a solder layer is located to the protective layer and on helping the solder layer and will help the solder layer parcel to be convenient for store the transportation.
Preferably, the material of the protective layer is selected from one of polyethylene, ethylene-tetrafluoroethylene, and wax. The material can be formed in a spin coating or spraying mode, the manufacturing method is simple, the welding-assistant layer is effectively protected, the welding-assistant layer and welding cannot be affected, and specifically, the material can be instantly shrunk into a small molecular state at high temperature, and welding cannot be affected.
Wherein the thickness of the protective layer is 1-10 μm. Preferably, the thickness of the protective layer is 3-7 μm. More preferably, the thickness of the protective layer is 4-6 μm.
Correspondingly, the utility model also provides a flip-chip Mini/Micro-LED chip's packaging method, include:
A. placing the inverted Mini/Micro-LED chip on a substrate, wherein a welding layer of the inverted Mini/Micro-LED chip is aligned with a bonding pad on the substrate;
B. and heating the substrate, bonding the welding layer between the inverted Mini/Micro-LED chip and the substrate after the welding layer is melted, and forming a carbon-containing compound between the welding-assistant layer and the bonding pad.
Preferably, in the step (B), the substrate is gradient-heated, and a first temperature zone, a second temperature zone, a third temperature zone, a fourth temperature zone, a fifth temperature zone, a sixth temperature zone and a seventh temperature zone are provided, wherein a temperature of 150 ℃ < the first temperature zone < a temperature of the second temperature zone < a temperature of the third temperature zone < a temperature of the fourth temperature zone < a temperature of the fifth temperature zone < a temperature of the sixth temperature zone < a temperature of the seventh temperature zone < 250 ℃.
Preferably, the temperature of the first temperature zone is 160-165 ℃, the temperature of the second temperature zone is 170-175 ℃, the temperature of the third temperature zone is 180-185 ℃, the temperature of the fourth temperature zone is 190-195 ℃, the temperature of the fifth temperature zone is 200-205 ℃, the temperature of the sixth temperature zone is 210-215 ℃, and the temperature of the seventh temperature zone is 220-225 ℃.
The utility model discloses a method of gradient subregion heating lets the welding layer fully melt with the welding layer that helps, bonds perfectly between electrode and base plate, effectively prevents that the solder from overflowing to fill the space of detail between electrode and base plate fully, further improve the joint strength of electrode and base plate, the void ratio is less than 10% after the welding. In addition, the soldering assistant layer can form more firm carbon-containing compounds with the metal on the substrate through gradual heating, and the bonding strength of the soldering assistant layer and the metal is further improved.
The utility model discloses an equipment such as brush tin cream machine, point gum machine has been saved to the packaging method, lets the simpler of whole encapsulation production flow, effectively shortens between the encapsulation, greatly reduced cost.
The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the invention, which is defined by the claims and their equivalents.
Claims (10)
1. The flip Mini/Micro-LED chip easy to weld is characterized by comprising a substrate, a light-emitting structure arranged on the substrate, an electrode arranged on the light-emitting structure and a welding layer arranged on the electrode;
the welding layer comprises a welding flux layer, a welding-assistant layer arranged on the welding flux layer and a protective layer arranged on the welding flux layer and the welding-assistant layer and wrapping the welding-assistant layer; wherein the content of the first and second substances,
the solder layer is made of solder for soldering the electrode and the substrate;
the welding-assistant layer is made of soldering flux.
2. The easy-to-solder flip Mini/Micro-LED chip of claim 1, wherein the solder layer is made of a material selected from the group consisting of tin-lead solder, silver solder, copper solder and pure tin solder.
3. The easy-to-solder flip-chip Mini/Micro-LED chip of claim 1, wherein the flux has a viscosity of 200-600 kcps and a post-reflow residue of less than 50%.
4. The easy-to-solder flip Mini/Micro-LED chip of claim 3, wherein the material of the solder mask is selected from rosin or resin.
5. The easy-to-solder flip-chip Mini/Micro-LED chip of claim 4, wherein the resin is a thermosetting resin selected from one of unsaturated polyester, vinyl ester, epoxy maleimide resin, phenolic maleimide resin, bismaleimide resin and polyimide resin.
6. The flip-chip Mini/Micro-LED chip of claim 1, wherein the solder layer has a thickness of 10 to 100 μm.
7. The flip-chip Mini/Micro-LED chip of claim 1, wherein the thickness of the solder mask layer is 2-20 μm.
8. The flip-chip Mini/Micro-LED chip of claim 1, wherein the material of said protective layer is selected from one of polyethylene, ethylene tetrafluoroethylene, and wax.
9. The flip-chip Mini/Micro-LED chip of claim 8, wherein the protective layer has a thickness of 1 to 10 μm.
10. The flip-chip Mini/Micro-LED chip for easy soldering of claim 1, wherein the size of the flip-chip Mini/Micro-LED chip is less than 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022331210.2U CN213340422U (en) | 2020-10-19 | 2020-10-19 | Easily-welded inverted Mini/Micro-LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022331210.2U CN213340422U (en) | 2020-10-19 | 2020-10-19 | Easily-welded inverted Mini/Micro-LED chip |
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| CN213340422U true CN213340422U (en) | 2021-06-01 |
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| CN202022331210.2U Active CN213340422U (en) | 2020-10-19 | 2020-10-19 | Easily-welded inverted Mini/Micro-LED chip |
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