CN105679687A - Micro-interconnection method based on self-propagating reaction - Google Patents
Micro-interconnection method based on self-propagating reaction Download PDFInfo
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- CN105679687A CN105679687A CN201610050680.7A CN201610050680A CN105679687A CN 105679687 A CN105679687 A CN 105679687A CN 201610050680 A CN201610050680 A CN 201610050680A CN 105679687 A CN105679687 A CN 105679687A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
Abstract
The invention discloses a micro-interconnection method based on self-propagating reaction. The micro-interconnection method comprises the following steps of 1) processing a surface to be bonded on a substrate A, and depositing a self-propagating reaction thin film on the surface to be bonded; 2) processing a surface to be bonded on a substrate B, and pressing the surface to be bonded on the self-propagating reaction thin film on the substrate A, wherein the substrate A, the self-propagating reaction thin film and the substrate B jointly form an interconnection structure; 3) applying stress onto the interconnection structure for pre-pressing; and 4) continuously maintaining a pressurized state after completion of pre-pressing, and igniting the self-propagating reaction thin film to complete the interconnection of the substrate A and the substrate B so that the substrate A and the substrate B are tightly connected together. With a bonding connection technique described by the invention, the reaction speed is fast, the bonding efficiency is high, the heat affected area is small, the heat influence on other devices is reduced, the device reliability is improved, and the working lifetime is prolonged.
Description
Technical field
The invention belongs to field of electronic package fabrication, be more particularly related to a kind of micro-interconnecting method.
Background technology
More and more higher along with what device size microminiaturization and chip high-density integrated were required, traditional two-dimensional package integrated technology, by the restriction of Moore's Law, has leveled off to physics limit, it is impossible to solve interconnection delay and performance that power consumption increase causes and Cost Problems.
Three-dimensional stacked integrated and encapsulation technology achieves chip interconnection in vertical direction, postpone short, low in energy consumption, efficiency is high, integration density is high, become continuity Moore's Law unique method. And interconnecting bonding interconnection technique is one of key technology realizing three-dimensionally integrated and encapsulation technology. Bonding interconnection technique currently mainly has anode linkage, adhesive bond, eutectic bonding, wafer direct bonding and bump bonding etc., after wherein, both are possible not only to realize electric interconnection, device size can also be reduced and reduce process costs, being the focus being bonded now interconnection technique research. But the technological temperature used due to bonding technology is higher, limits the use of heat-sensitive material and miscellaneous part can cause hot injury affect the life-span; Pardon is poor, is not suitable for the Direct Bonding of the bigger foreign material of coefficient of expansion difference; Requiring vacuum or inert ambient environment, para-linkage equipment requirements is high, complex process.
Summary of the invention
Disadvantages described above or Improvement requirement for prior art, the invention provides a kind of micro-interconnecting method based on self-propagating reaction, can realize reliable low-temperature bonding again can Direct Bonding in atmosphere, same material can be bonded again and be also suitable for the connection of foreign material, make people while obtaining being bonded reliably, reduce production cost, improve production efficiency, simplify bonding technology.
For achieving the above object, it is proposed, according to the invention, provide a kind of micro-interconnecting method based on self-propagating reaction, it is characterised in that comprise the following steps:
1) surface to be bonded on matrix A is carried out surface treatment, then at this directly on a surface or indirectly deposition self-propagating reaction thin film to be bonded;
2) surface to be bonded on matrix B being carried out surface treatment, be then directly or indirectly stacked on the self-propagating reaction thin film on matrix A on this surface to be bonded, described matrix A, self-propagating reaction thin film and matrix B collectively form interconnection structure;
3) on described interconnection structure, apply pressure and carry out precompressed;
4) after precompressed completes, continuing to keep pressurized state, then ignite self-propagating reaction thin film, to complete matrix A and the interconnection of matrix B, makes matrix A and matrix B be fixed together.
Preferably, described matrix A and/or matrix B is by Cu, Al, Au, Ag, Si or Al2O3Make.
Preferably, it is argon plasma etch, chemical polishing or machine glazed finish to matrix A and/or the matrix B surface treatment carried out, to reduce matrix A and/or matrix B surface roughness and to improve surface activity.
Preferably, after surface to be bonded on described matrix A and/or matrix B is carried out surface treatment, first one layer of solder of deposition, then on the solder of matrix A, deposit described self-propagating reaction thin film again, wherein, described solder is brazing temperature solder between 200 DEG C～650 DEG C, and the thickness of the solder deposited is not more than 10 μm.
Preferably, described self-propagating reaction thin film by Al or silicon and a kind of can react the magnesium-yttrium-transition metal alternating deposit of heat release, stacked in multi-layers is formed, and the thickness sum of the thickness of the thickness of monolayer Al or monolayer silicon and monolayer magnesium-yttrium-transition metal is 80nm～300nm.
Preferably, described self-propagating reaction thin film is formed by two kinds of the energy magnesium-yttrium-transition metal alternating deposits of exothermic heat of reaction, stacked in multi-layers, and the thickness in monolayer sum of the thickness in monolayer of one of which magnesium-yttrium-transition metal and another magnesium-yttrium-transition metal is 80nm～300nm.
Preferably, the thickness in monolayer ratio of the bi-material of described self-propagating reaction thin film makes the two atomic ratio meet the two product atomic ratio.
Preferably, the gross thickness of described self-propagating reaction thin film is 24 μm～90 μm.
Preferably, described in the ignite mode of self-propagating reaction thin film can ignite for electric spark, arc ignition, add thermal ignition, laser-induced combustion or microwave ignite.
Preferably, step 3) in precompressed time interconnection structure on pressure be 10MPa～20MPa, squeeze time is 2min～10min.
In general, by above technical scheme of the present invention compared with prior art, it is possible to obtain following beneficial effect:
1) the bonding interconnection technique that the present invention describes, reaction rate is fast, and bonding efficiency is high, and heat affected area is little, reduces the impact on other devices, improves the reliability of device, extends working life;
2) the bonding interconnection technique that the present invention describes is not only suitable for the interconnection of same material, is also suitable for the connection of the bigger foreign material of Physical Properties Difference, and its low technological temperature can be additionally used in the connection of temperature sensitive material;
3) the bonding interconnection technique that the present invention describes does not need vacuum equipment and inert atmosphere, can complete bonding in atmosphere, and interconnection structure is simple, and technological operation is convenient, is no longer necessary to outside energy input after the thin film that ignites, and energy consumption is low, reduces production cost;
4) bonding interconnection technique of the present invention can use the middle temperature brazing material of the excellent performance that other technologies should not use;
5) the present invention is directed to the deficiency of the technological temperature of conventional bonding process height, equipment requirements height, complex process, the local proposing a kind of cost effective adds thermal bonding interconnection technique, can realize reliable low-temperature bonding again can Direct Bonding in atmosphere, same material can be bonded and be also suitable for the connection of foreign material, make people while obtaining being bonded reliably, reduce production cost, improve production efficiency, simplify bonding technology flow process.
Accompanying drawing explanation
Fig. 1 is the process chart of the specific embodiment of the invention.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated. Should be appreciated that specific embodiment described herein is only in order to explain the present invention, is not intended to limit the present invention. As long as just can be mutually combined additionally, technical characteristic involved in each embodiment of invention described below does not constitute conflict each other.
With reference to Fig. 1, after the present invention carries out the surface treatment such as deoxidation and polishing by para-linkage interface, by depositing self-propagating reaction thin film (depending on whether matrix own material wants deposit solder) after Direct precipitation solder on basal body interface again, or Direct precipitation self-propagating reaction thin film, by two matrix aligned stack to be bonded, after the precompressed of certain time, ignite self-propagating reaction thin film, melting solder or make matrix surface micro-molten, promotes that diffusion completes bonding.
Embodiment 1
1) surface to be bonded of matrix A is carried out surface treatment, on this surface to be bonded, then deposit self-propagating reaction thin film;
2) surface to be bonded of matrix B being carried out surface treatment, be so pressed on the self-propagating reaction thin film on matrix A on this surface to be bonded, described matrix A, self-propagating reaction thin film and matrix B collectively form interconnection structure;
Described matrix A and/or matrix B is made up of Cu, Al, Au, Ag; It is argon plasma etch, chemical polishing or machine glazed finish to matrix A and/or the matrix B surface treatment carried out; The gross thickness of described self-propagating reaction thin film is 24 μm～30 μm, and this thickness determines the thermal discharge of the two reaction;
Preferred as one, magnesium-yttrium-transition metal (such as Ti, Ni, Pd, Zr or Pt) alternating deposit, stacked in multi-layers that described self-propagating reaction thin film can be reacted with a kind of by Al are formed, and the thickness in monolayer ratio of above two material makes the two atomic ratio should comply with product atomic ratio, and the two thickness in monolayer sum is 80nm～100nm.
As further preferred, self-propagating reaction thin film can be formed by Al and Ni alternating deposit, stacked in multi-layers, and the thickness of the thickness of monolayer Al and monolayer Ni ratio for 3:2, to ensure that its atomic ratio is for 1:1, so can obtain product AlNi; It addition, the thickness in monolayer sum of the two is 80～100nm, this thickness determines the two required temperature of igniting;
3) on described interconnection structure, apply pressure and carry out precompressed; Step 3) in precompressed time interconnection structure on pressure be 10MPa, squeeze time is 2min.
4) after precompressed completes, continuing to keep pressurized state, then ignite self-propagating reaction thin film, to complete matrix A and the interconnection of matrix B, makes matrix A and matrix B be closely joined together. Wherein, described in the ignite mode of self-propagating reaction thin film can ignite for electric spark, arc ignition, add thermal ignition, laser-induced combustion or microwave ignite.
Additionally, preferred as one, step 1) in the surface to be bonded on described matrix A is carried out surface treatment after, first can deposit the low temperature brazing material such as a layer of Sn, Au-Sn or SnAgCu on surface to be bonded, then on solder, deposit described self-propagating reaction thin film again, the brazing temperature of solder is 200 DEG C～300 DEG C, and the thickness of the solder deposited is not more than 5 μm.
Embodiment 2
1) surface to be bonded on matrix A is carried out surface treatment, on this surface to be bonded, then deposit self-propagating reaction thin film;
2) surface to be bonded on matrix B being carried out surface treatment, be so pressed on the self-propagating reaction thin film on matrix A on this surface to be bonded, described matrix A, self-propagating reaction thin film and matrix B collectively form interconnection structure; Described matrix A is made up of Cu, Al, Au or Ag, and matrix B can by Si, SiO2Or Al2O3Make, be argon plasma etch, chemical polishing or machine glazed finish to matrix A and/or the matrix B surface treatment carried out; The gross thickness of described self-propagating reaction thin film is 48 μm～60 μm, and this thickness determines the thermal discharge of the two reaction.
Preferred as one, magnesium-yttrium-transition metal (such as Ti, Ni, Pd, Pt) alternating deposit, stacked in multi-layers that described self-propagating reaction thin film can be reacted with a kind of by Si are formed, and the thickness in monolayer ratio of above two material makes the two atomic ratio should comply with the two product atomic ratio, and the thickness sum of the thickness of monolayer Al and monolayer magnesium-yttrium-transition metal is 150nm～200nm;
As further preferred, self-propagating reaction thin film is formed by Si and Ti alternating deposit, stacked in multi-layers, and the thickness of the thickness of monolayer Si and monolayer Ti ratio for 2:3, to ensure that its atomic ratio is for 3:5, so can obtain product Ti5Si3, and the thickness in monolayer sum of the two is 160nm～200nm, this thickness determines the two required temperature of igniting.
3) on described interconnection structure, apply pressure and carry out precompressed; Step 3) in precompressed time interconnection structure on pressure be 16MPa, squeeze time is 8min.
4) after precompressed completes, continuing to keep pressurized state, then ignite self-propagating reaction thin film, to complete matrix A and the interconnection of matrix B, makes matrix A and matrix B be fixed together. The mode of the described self-propagating reaction thin film that ignites can be ignited for electric spark, arc ignition, adds thermal ignition, and laser-induced combustion or microwave ignite.
Additionally, preferred as one, step 1) in the surface to be bonded on described matrix A is carried out surface treatment after, can first deposit one layer of Zn-Cu-Sn middle temperature brazing material, then on solder, deposit described self-propagating reaction thin film again, wherein, the brazing temperature of described solder is 350 DEG C～450 DEG C, and the thickness of the solder deposited is not more than 10 μm.
Embodiment 3
1) surface to be bonded on matrix A is carried out surface treatment, on this surface to be bonded, then deposit self-propagating reaction thin film;
2) surface to be bonded on matrix B is carried out surface treatment, one layer of solder is deposited again on its surface, then on solder, deposit described self-propagating reaction thin film again, wherein, described solder is preferably the Al parent metal that brazing temperature range is 560～650 DEG C, such as Al-Si-Cu-Ni system, the thickness of the solder deposited is not more than 10 μm. Then being pressed on the self-propagating reaction thin film on matrix A on this surface to be bonded, described matrix A, self-propagating reaction thin film and matrix B collectively form interconnection structure; Described matrix A and/or matrix B is by SiC, Al2O3Or AlN makes; It is argon plasma etch, chemical polishing or machine glazed finish to matrix A and/or the matrix B surface treatment carried out; The gross thickness of described reactive film is 75 μm～90 μm, and this thickness determines the thermal discharge of the two reaction;
Preferred as one, described self-propagating reaction thin film is formed by two kinds of the energy magnesium-yttrium-transition metal alternating deposits of exothermic heat of reaction, stacked in multi-layers, the thickness in monolayer ratio of two kinds of magnesium-yttrium-transition metals should make the two atomic ratio meet the two product atomic ratio, and the thickness in monolayer sum of two kinds of magnesium-yttrium-transition metals is 250nm～300nm;
As further preferred, self-propagating reaction thin film is formed by Ni and Ti alternating deposit, stacked in multi-layers, and the thickness of above two material ratio is for 3:5, to ensure that its atomic ratio is for 1:1, so can obtain product NiTi; It addition, the thickness in monolayer sum of the two is 250nm～300nm, this thickness determines the two required temperature of igniting.
3) on described interconnection structure, apply pressure and carry out precompressed; Step 3) in precompressed time matrix A on pressure be 20MPa, squeeze time is 10min.
4) after precompressed completes, continuing to keep pressurized state, then ignite self-propagating reaction thin film, to complete matrix A and the interconnection of matrix B, makes matrix A and matrix B be fixed together. The mode of the described self-propagating reaction thin film that ignites can be ignited for electric spark, arc ignition, adds thermal ignition, and laser-induced combustion or microwave ignite.
Those skilled in the art will readily understand; the foregoing is only presently preferred embodiments of the present invention; not in order to limit the present invention, all any amendment, equivalent replacement and improvement etc. made within the spirit and principles in the present invention, should be included within protection scope of the present invention.
Claims (10)
1. the micro-interconnecting method based on self-propagating reaction, it is characterised in that comprise the following steps:
1) surface to be bonded on matrix A is carried out surface treatment, then at this directly on a surface or indirectly deposition self-propagating reaction thin film to be bonded;
2) surface to be bonded on matrix B being carried out surface treatment, be then directly or indirectly stacked on the self-propagating reaction thin film on matrix A on this surface to be bonded, described matrix A, self-propagating reaction thin film and matrix B collectively form interconnection structure;
3) on described interconnection structure, apply pressure and carry out precompressed;
4) after precompressed completes, continuing to keep pressurized state, then ignite self-propagating reaction thin film, to complete matrix A and the interconnection of matrix B, makes matrix A and matrix B be fixed together.
2. a kind of micro-interconnecting method based on self-propagating reaction according to claim 1, it is characterised in that described matrix A and/or matrix B is by Cu, Al, Au, Ag, Si or Al2O3Make.
3. a kind of micro-interconnecting method based on self-propagating reaction according to claim 1, it is characterized in that, it is argon plasma etch, chemical polishing or machine glazed finish to matrix A and/or the matrix B surface treatment carried out, to reduce matrix A and/or matrix B surface roughness and to improve surface activity.
4. a kind of micro-interconnecting method based on self-propagating reaction according to claim 1, it is characterized in that, after surface to be bonded on described matrix A and/or matrix B is carried out surface treatment, first one layer of solder of deposition, then on the solder of matrix A, deposit described self-propagating reaction thin film again, wherein, described solder is brazing temperature solder between 200 DEG C～650 DEG C, and the thickness of the solder deposited is not more than 10 μm.
5. a kind of micro-interconnecting method based on self-propagating reaction according to claim 1, it is characterized in that, described self-propagating reaction thin film by Al or silicon and a kind of can react the magnesium-yttrium-transition metal alternating deposit of heat release, stacked in multi-layers is formed, and the thickness sum of the thickness of the thickness of monolayer Al or monolayer silicon and monolayer magnesium-yttrium-transition metal is 80nm～300nm.
6. a kind of micro-interconnecting method based on self-propagating reaction according to claim 1, it is characterized in that, described self-propagating reaction thin film is formed by two kinds of the energy magnesium-yttrium-transition metal alternating deposits of exothermic heat of reaction, stacked in multi-layers, and the thickness in monolayer sum of the thickness in monolayer of one of which magnesium-yttrium-transition metal and another magnesium-yttrium-transition metal is 80nm～300nm.
7. a kind of micro-interconnecting method based on self-propagating reaction according to claim 5 or 6, it is characterised in that the thickness in monolayer ratio of the bi-material of described self-propagating reaction thin film makes the two atomic ratio meet the two product atomic ratio.
8. a kind of micro-interconnecting method based on self-propagating reaction according to claim 1, it is characterised in that the gross thickness of described self-propagating reaction thin film is 24 μm～90 μm.
9. a kind of micro-interconnecting method based on self-propagating reaction according to claim 1, it is characterised in that described in the ignite mode of self-propagating reaction thin film can ignite for electric spark, arc ignition, add thermal ignition, laser-induced combustion or microwave ignite.
10. a kind of micro-interconnecting method based on self-propagating reaction according to claim 1, it is characterised in that step 3) in precompressed time interconnection structure on pressure be 10MPa～20MPa, squeeze time is 2min～10min.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106624347A (en) * | 2017-01-16 | 2017-05-10 | 中国人民解放军装甲兵工程学院 | Method for connecting heterogeneous light metal materials by applying nanometer reaction multilayer films |
| CN107552962A (en) * | 2017-10-11 | 2018-01-09 | 中国工程物理研究院化工材料研究所 | A kind of plesiochronous active welding method of sapphire and metal |
| CN110856882A (en) * | 2018-08-26 | 2020-03-03 | 南京理工大学 | Arc-discharge stud welding method by hollow stud induced electron emission |
| CN111302301A (en) * | 2020-02-27 | 2020-06-19 | 上海交通大学 | Device for inducing self-propagating reaction of nano-multilayer film by using resistance heat |
| CN114340211A (en) * | 2020-06-29 | 2022-04-12 | 南京纳研企业管理合伙企业(有限合伙) | Circuit board composite material and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5863670A (en) * | 1995-04-24 | 1999-01-26 | Nhk Spring Co., Ltd. | Joints of Ti-Al intermetallic compounds and a manufacturing method therefor |
| TW412454B (en) * | 1997-04-04 | 2000-11-21 | Nguyen Dinh Xuan | Process of producing a component consisting of a gamma-titanium aluminide body jointed to a steel body |
| CN102489811A (en) * | 2011-12-09 | 2012-06-13 | 哈尔滨工业大学 | Method for carrying out self-propagating reaction assisted brazed connection on C/C (carbon/carbon) composites and TiAl |
| CN103224218A (en) * | 2013-04-12 | 2013-07-31 | 华中科技大学 | Encapsulation method of MEMS device |
-
2016
- 2016-01-26 CN CN201610050680.7A patent/CN105679687A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5863670A (en) * | 1995-04-24 | 1999-01-26 | Nhk Spring Co., Ltd. | Joints of Ti-Al intermetallic compounds and a manufacturing method therefor |
| TW412454B (en) * | 1997-04-04 | 2000-11-21 | Nguyen Dinh Xuan | Process of producing a component consisting of a gamma-titanium aluminide body jointed to a steel body |
| CN102489811A (en) * | 2011-12-09 | 2012-06-13 | 哈尔滨工业大学 | Method for carrying out self-propagating reaction assisted brazed connection on C/C (carbon/carbon) composites and TiAl |
| CN103224218A (en) * | 2013-04-12 | 2013-07-31 | 华中科技大学 | Encapsulation method of MEMS device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106624347A (en) * | 2017-01-16 | 2017-05-10 | 中国人民解放军装甲兵工程学院 | Method for connecting heterogeneous light metal materials by applying nanometer reaction multilayer films |
| CN107552962A (en) * | 2017-10-11 | 2018-01-09 | 中国工程物理研究院化工材料研究所 | A kind of plesiochronous active welding method of sapphire and metal |
| CN110856882A (en) * | 2018-08-26 | 2020-03-03 | 南京理工大学 | Arc-discharge stud welding method by hollow stud induced electron emission |
| CN110856882B (en) * | 2018-08-26 | 2021-09-28 | 南京理工大学 | Arc-discharge stud welding method by hollow stud induced electron emission |
| CN111302301A (en) * | 2020-02-27 | 2020-06-19 | 上海交通大学 | Device for inducing self-propagating reaction of nano-multilayer film by using resistance heat |
| CN114340211A (en) * | 2020-06-29 | 2022-04-12 | 南京纳研企业管理合伙企业(有限合伙) | Circuit board composite material and preparation method and application thereof |
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Application publication date: 20160615 |