CN106271177A - A kind of interconnection solder and interconnection manufacturing process thereof - Google Patents
A kind of interconnection solder and interconnection manufacturing process thereof Download PDFInfo
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- CN106271177A CN106271177A CN201610847725.3A CN201610847725A CN106271177A CN 106271177 A CN106271177 A CN 106271177A CN 201610847725 A CN201610847725 A CN 201610847725A CN 106271177 A CN106271177 A CN 106271177A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/06—Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
The invention provides a kind of interconnection solder and interconnection manufacturing process thereof, the heating technological temperature of described its product applied of interconnection solder is T, and described interconnection solder comprises fusing point more than component A of T, fusing point less than component B of T, fusing point third phase component C more than T；Described third phase component C accounts for the 0 ~ 30% of the quality summation of component A, component B, third phase component C；Wherein between component A and component B, at a temperature of described heating technique, reaction forms compound AxBy；Described component A is more than x/y with the ratio of the amount of the material of component B, and described third phase component C does not reacts with component A, component B, and the hardness of described third phase component C is less than component A, component B and compound AxByHardness.Technical scheme, while obtaining high-melting-point welding point, regulates Young's modulus and the thermal coefficient of expansion of joint also by the ratio of each component in regulation solder.
Description
Technical field
The invention belongs to field of material technology, particularly relate to a kind of interconnection solder and interconnection manufacturing process thereof.
Background technology
In recent years, the elastic braid quasiconductor such as SiC, GaN, InP replaces Si and extensively should with its superior electronics conversion performance
Use the field such as automotive electronics, great power LED.These electronic devices can work in the environment of higher than 250 DEG C and keep excellent
Good characteristic.On the other hand, microelectronic chip is bonded towards miniaturization, high density, excellent electromechanical properties direction high speed development,
The quantity of heat production making its unit are increases considerably, and being limited these heats by the heat conductivility of material own cannot be timely with outward
Boundary swaps, and the operating temperature causing chip is more and more higher.
All the time, due to Sn-Pb eutectic alloy, there is good electric conductivity, heat conductivity, resisting fatigue stability and relatively
Low price and surface tension, and be widely used in Electronic Packaging domain variability and occupy leading position for a long time.Particularly in aviation
High power high-temperature module in the high-precision pointed collar territories such as space flight, geological drilling, military affairs still uses fusing point to be respectively 310 DEG C and 305
DEG C Pb-5Sn and Pb-10Sn height lead solder as connecting material.The trend unleaded in order to comply with consumer electronics, meets people
Growing Science & Technology Demands, it is achieved the research of high-temperature electronic encapsulation lead-free and application are that world's electronic industry faces in recent years
Urgent problem, relevant scholar and research worker all over the world are made that unremitting effort for this.
Traditional die mount on the basis of, high-temperature electronic encapsulation method development, developed formation with
High temperature conjunction method in lower four: the methods such as high-temp leadless solder, Transient liquid phase method, nanoparticles sinter and solid phase Direct Bonding.
In order to replace dystectic high lead solder, first people expand the research of high-temp leadless solder and achieve certain achievement,
Following several systems are wherein primarily formed, such as: Au base alloy, Zn base alloy, Sn-Sb etc..Conventional Au base alloy has Au-
Sn, Au-Ge and Au-Si etc., wherein Au-20Sn is the high-temp solder received publicity the earliest, its eutectic point and high lead solder fusing point
The most close.Although Au base alloy has higher intensity, electrical and thermal conductivity performance, but Au base alloy rigidity is higher, processing characteristics
The stress that generation poor, easy is bigger, the price of what is more important Au is sufficiently expensive, considerably increases cost of material, application
Field be restricted.Although Zn base cost of alloy is relatively low, but processing temperature is higher easily to be damaged chip, and
Its mechanical property, electric property and high-temperature performance all have much room for improvement.Although Sn-Sb alloy has good profit to copper surface
Moist, but Sn-Sb alloy melting point relatively low (about 230 DEG C), it is very difficult to apply in the middle of secondary back, therefore this alloy is ground
Study carefully and apply relatively fewer.
Secondly, for the sintering and solid phase Direct Bonding of nano-particle, in its sintering process, general applying is certain
Pressure, easily causes the damage of unrepairable to chip.The manufacturing process of nano-particle is complex, single yield is relatively low and relatively
Structure property after high porosity makes the sintering of nano-particle enjoy challenge, and its sintering differs relatively big with reguline metal,
Still the accreditation of industry is hardly resulted in.Solid phase Direct Bonding, as emerging bonding method, is paid close attention to the most widely, although
It uses high vacuum environment to protect when making, and only by cavity in the migration joint of thermal stress, more cannot to obtain densification excellent
Good joint.
Transient liquid phase method, i.e. makes solder intermediate layer melt by heating and generates high-melting-point gold with substrate generation diffusion reaction
Belong to the joint of compound, thus there is stronger high temperature repellence.But, due to the Young's modulus of compound is relatively big and substrate and
There is bigger thermal coefficient of expansion mismatch problem in chip, through long-term elevated temperature thermal cycles, runs up to certain in thermal stress
The limit, it is easy to cause chip to lose efficacy with the stripping of substrate.For the field that reliability requirement is higher, if it is in application process
Middle ftracture, not only result in huge economic loss, it is also possible to cause catastrophic consequence.
Additionally, the formation of traditional Transient liquid phase method high-melting-point interconnection solder joint relies primarily on the atoms permeating under high temperature, its
Atom at least this adds increased the time loss in the course of processing by the weld size of 1/2nd.Particularly, former as Ni
For the material that sub-diffusion velocity is slower, its time loss has become critical defect undoubtedly.Therefore, ensureing that obtaining high-melting-point interconnects
On the basis of solder joint, how overcoming and solving the time loss of Transient liquid phase method is a difficult point.In addition, current solder weldering
The Young's modulus high problem connecing rear weld seam is the difficult point of current chip package, hinders the important of scientific and technological progress process of industrialization especially
Factor, is current various countries crucial problem urgently to be resolved hurrily.
Summary of the invention
For above technical problem, the invention discloses a kind of interconnection solder and interconnection manufacturing process thereof, use interconnection pricker
The joint that material is formed realizes the controlled of Young's modulus and thermal coefficient of expansion under atmospheric environment, and provides and a kind of interconnect shaping side
Method, it assists rapid shaping, and the present invention not only solves the problem that Transient liquid phase method is time-consumingly grown, it is also possible to the Young of regulation joint
Modulus makes its thermal stress avoiding chip heat production to cause lose efficacy.
To this, the technical solution used in the present invention is:
A kind of interconnection solder, the heating technological temperature of its product applied is T, and described interconnection solder comprises fusing point more than T's
Component A, fusing point are less than component B of T, fusing point third phase component C more than T；Described third phase component C account for component A, component B,
The 0 ~ 30% of the quality summation of three phase component C；At a temperature of described heating technique, wherein react formationization between component A and component B
Compound AxBy；The ratio of described component A and the amount of the material of component B is more than x/y, and described third phase component C and component A, component B are equal
Not reacting, the hardness of described third phase component C is less than component A, component B and compound AxByHardness.Wherein, component
A, component B are metallic particles.Wherein, compound AxByIn characteristic according to component A and component B of the value of x and y depending on, AxBy
Stable performance at temperature T；Described component A is more than the amount of x/y, i.e. component A enough by component with the ratio of the amount of the material of component B
The amount of B all consumes, and forms compound AxBy, and the amount of component A can have unnecessary.So so that use this to interconnect solder
The joint formed is dystectic joint, thus has stronger high temperature repellence.Preferably, described third phase component C is
Granular, it is more than metal or the metallic compound of T for fusing point.
Use this technical scheme, change prior art and use alloy inclined as way and the technology of solder main component
Seeing, using component A and component B of separate different melting points, component A and component B have more higher specific surface area than alloy, permissible
Preferably contact with the surface being soldered, and form compound A by component A and component BxBy, reduce the evolving path of atom,
The problem solving Transient liquid phase method time loss length.
It addition, solve and chip and the thermal expansion matching problem of substrate to reduce the Young's modulus of full compound joint,
Can increase the ratio of component A in interconnection solder, or in interconnection solder, add that appropriate hardness is less does not participate in reaction further
Third phase component C.It addition, in order to obtain single high melting compound joint, can be by the ratio root of component A, component B in solder
According to the composition control of its compound in the range of reasonably, and cancel the addition of third phase component C.
The applied environment of technical scheme foundation high temperature power electronic product and problem, by adding in solder
Metallic particles component A reduces the evolving path of atom, the problem solving Transient liquid phase method time loss length.It addition, it is general
The tissue Young's modulus of the full compound joint that Transient liquid phase method obtains is higher, easily because of thermal stress under long-term thermal shock
Cracking, the present invention by increasing the ratio of component A in interconnection solder, or can add appropriate hardness in interconnection solder further
Less third phase component C not participating in reaction, not only greatly reduces the Young's modulus of joint, and Young's modulus is reduced to originally
15% ~ 40%, also have the advantages such as fusing point high, air-tightness is good, defect is few, intensity is high, good conductivity that ordinary couplings had concurrently,
Can apply under high temperature, the environment such as ultrasonic, be specially adapted in third generation elastic braid semiconductor packaging process.
As a further improvement on the present invention, described component B includes that Sn, described component A are in Ni, Ag, Cu, Au at least one
Kind, described third phase granule is at least one in Al, Mg, Graphene.
As a further improvement on the present invention, the Surface coating of described third phase component C has in Ag, Au or Sn at least one
Kind.Use this technical scheme, so that third phase component C particles is well combined with solders such as Sn.
As a further improvement on the present invention, described component A is Ni, and described component B includes Sn, described AxByCompound is
Ni3Sn4。
As a further improvement on the present invention, described component A is Cu, and described component B is Sn, described AxByCompound is
Cu6Sn5Or Cu3Sn。
As a further improvement on the present invention, described component A is Ag, and described component B is Sn, described AxByCompound is
Ag3Sn。
As a further improvement on the present invention, described component A is Au, and described component B is Sn, described AxByCompound is
AuSn4、AuSn2Or AuSn.
As a further improvement on the present invention, described compound AxByThe nucleocapsid knot of the A@B that component A is constituted is surrounded for component B
Structure.Using this technical scheme, in solder, the metal material of the nucleocapsid structure of the A@B that component A and the reaction of component B generate reduces former
The evolving path of son, the problem solving Transient liquid phase method time loss length；And greatly reduce the Young's modulus of joint,
Also have the advantages such as fusing point high, air-tightness is good, defect is few, intensity is high, good conductivity that ordinary couplings had concurrently, can high temperature,
Ultrasonic grade is applied under environment, is specially adapted in third generation elastic braid semiconductor packaging process.Changing further as the present invention
Enter, described component A, component B and component C be spherical, lamellar or bar-shaped at least one.
As a further improvement on the present invention, described interconnection solder also comprises scaling powder.
Present invention also offers a kind of interconnection manufacturing process, it is characterised in that: it uses as above, and interconnection solder will
Mother metal one and mother metal three link together.
As a further improvement on the present invention, described interconnection manufacturing process comprises the following steps:
Step S1: mother metal one and mother metal three are carried out surface process；
Step S2: described interconnection solder is put into as intermediate layer formation sandwich structure between mother metal one, mother metal three, and uses
Described sandwich structure is fixed by fixing component；
Step S3: use heater that fixing component is heated, make intermediate layer two fusing by conduction of heat；Employing pressure is adjusted
Regulating device applies pressure and keeps sandwich structure mother metal one, and is incubated 3 ~ 60s at a temperature of described heating technique, then keeps
It is cooled to room temperature under above-mentioned pressure.
Preferably, the chip material of the mother metal one that said method is targeted is Si, SiC, GaN, InP, GaAs etc., and chip is carried on the back
Face can carry out monometallic coating as required or many coats of metal process.Wherein, described Si, SiC, GaN, InP, GaAs are often
Chip material.
The fusing point using the joint that obtains of the method to have is high, air-tightness is good, defect is few, intensity is high, good conductivity etc. is excellent
Point, it is achieved the hot interface between chip with substrate is connected or is electrically connected, has good conduction, heat conductivility, beneficially chip
The raising of performance；Can apply under high temperature, the environment such as ultrasonic, be specially adapted in third generation elastic braid semiconductor packaging process.
As a further improvement on the present invention, in step S2, when using heater that fixing component is heated, to institute
State sandwich structure and apply oscillator field or ultrasonic field.Use this technical scheme, apply ultrasonic field, ultrasonic " cavitation " and " acoustic streaming "
Effect will increase the diffusion velocity of atom further, and the cavitation bubble of ultrasonic generation can produced local by the moment of compression blasting
High temperature and high pressure environment, provide enough energy for the diffusion reaction between solder, meanwhile, the explosion of cavitation bubble also can produce microbeam
Stream, compound reaction generated is peeled off from metal surface, promotes to be exposed the further reaction of metal.Introduce laser field, swash
What the high-energy-density of light, good directivity can orient inputs substantial amounts of energy in weld seam, adds the process of fast response.
As a further improvement on the present invention, the time of described applying oscillator field or ultrasonic field be not more than described heating time
Between.
As a further improvement on the present invention, in step S1, described mother metal one and mother metal three are carried out surface process include:
First the connection surface of mother metal one, mother metal three is polished respectively, then carry out ultrasonic cleaning.
Preferably, first to mother metal one, mother metal three connection surface fine sandpaper slightly polish remove surface oxidation
Layer and greasy dirt impurity.
As a further improvement on the present invention, the temperature of described heating is higher than 10 ~ 30 DEG C of fusing point of component B.Use this
Technical scheme, prevents that temperature is too low causes the unfused of solder and the too high damage to chip of temperature.
As a further improvement on the present invention, described interconnection solder is pre-tabletting structure or paste.Use this technical scheme,
It is adapted to different process conditions operate.
As a further improvement on the present invention, in step S2, described sandwich structure is first carried out precompressed, then uses solid
Determine component to be fixed by described sandwich structure.As such, it is possible to determine pressure size according to the size reasonable of required weld seam in advance.
As a further improvement on the present invention, described heater can be induction heating apparatus, microwave heating equipment or heat
In air heating device at least one.
As a further improvement on the present invention, described mother metal one and the equal horizontal cross of mother metal three are placed；Described mother metal three with
Fixing device is fixing to be connected, and the outside of described mother metal one contacts with pressure-regulating device.Use this technical scheme, conveniently operation,
And weld effective.
As a further improvement on the present invention, described fixing component is fixture, and the surface of described fixture is provided with groove, described
Groove shapes is consistent with mother metal three, and the boundary dimensions of described groove is more than 0.1 ~ 0.2mm of the boundary dimensions of mother metal three, described recessed
Little 0.3 ~ the 0.8mm of thickness of the depth ratio mother metal three of groove.Using this technical scheme, fixed structure has good stability.
Technical scheme mainly uses two kinds of effective measures to accelerate response speed, to reduce time loss.First,
If forming nucleocapsid metal material, due to these solders only with metal mixed grain fraction A and component B or component A and component B
Low-melting component B is greatly reduced, by the granule of high melting point component A in regulation solder with the distance of high melting point component A
Size and content guarantee the consumption completely of high melting point component A, reach the purpose of high-melting-point interconnection solder joint.
Compared with prior art, the medicine have the advantages that
First, use the interconnection solder of the present invention, according to applied environment and the problem of high temperature power electronic product, by solder
Middle addition metallic particles component A reduces the evolving path of atom, solves the Transient liquid phase method time loss length of prior art
Problem；The joint of high melting point metal compound can be formed simultaneously, thus there is stronger high temperature repellence.
Second, technical scheme can solve full compound joint Young's modulus by simple effective method
Higher and the unmatched problem of substrate thermal coefficient of expansion.It is possible, firstly, to by change high melting point component A in solder ratio or,
Regulation component A, the ratio of component B thus regulate forms what the thickness of each metal level in nucleocapsid metal material A@B controlled to obtain
Joint is the mixing high temperature joint of full compound joint or compound and high melting point component A.In joint, high melting point component A's deposits
In the Young's modulus by reducing joint to a certain extent, improve the performance of joint.Next, if the high melting point component in joint
A still cannot obtain preferable Young's modulus joint, can add hardness less and do not participate in the third phase component of reaction in solder
C, the metal that fusing point as less in hardness such as Al, Mg is higher, also can add Graphene in solder and regulate the thermal expansion system of joint
Number, reaches the matched well with substrate.
3rd, interconnection solder and the interconnection manufacturing process thereof of technical scheme can be carried out even under atmospheric environment
Connect, overcome some solder high temperature, the processing environment of fine vacuum, simplify production technology, improve production efficiency, reduce and produce into
This, beneficially industrialization large-scale production, and the printing that the solder paste made is easy on substrate, compatible with existing packaging technology
Property is good.
4th, interconnection solder and the interconnection manufacturing process thereof of technical scheme can realize no pressure or low-pressure
Under welding, it is to avoid cause the damage to chip owing to chip is applied bigger pressure, simple to operate flexibly, not by workpiece size
With the restriction of shape, be adapted to simultaneously large scale, large-area substrates and heat sink between connection.
5th, technical scheme can control weldering by the thickness of the thickness of printing solder paste or lamellar solder
Seam size, reach optimal seam effect, it is thus achieved that strength of joint height, good leak tightness, wettability is good, welded rate is high, the suitableeest
In requisition for long-time vacuum pressure-resistant seal, high service temperature, high intensity and the application scenario of adverse circumstances.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that the present invention uses that connected material is assembled by interconnection solder.
Fig. 2 is the microstructure schematic diagram that the present invention interconnects solder.
Fig. 3 is the microstructure schematic diagram that the nucleocapsid structure that the present invention is formed when heating mixes with third phase granule.
Fig. 4 is the connection diagram of the interconnection manufacturing process of the present invention.
Reference is: 1-mother metal one, 2-intermediate layer two, 3-mother metal three, 4-fixture, 5-pressure-regulating device, 21-component
A, 22-component B, 23-third phase component C, 24-scaling powder.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the preferably embodiment of the present invention is described in further detail.
Embodiment 1
See shown in Fig. 1, Fig. 2 and Fig. 4, a kind of method realizing high melting compound joint under atmospheric environment, this method of attachment
Comprise the following steps:
I, connected material is carried out surface process: the connection surface 1200# sand paper sand paper of mother metal 1 and mother metal 33 is entered
Oxide layer and the greasy dirt impurity on surface is removed in the slight polishing of row, immerses ethanol solution afterwards and carries out ultrasonic cleaning 3 ~ 5min；
II, mother metal 33 being placed in lower floor, mother metal 1 is placed in upper strata and intermediate layer 2 pilot process one sandwich structure, mother
Material 1 and the equal horizontal cross of mother metal 33 are placed.Above-mentioned mother metal 1 used is chip, chip material be Si, SiC, GaN, InP or
GaAs, chip back coated metal be Ni, Ni layer thickness be 8 m；Mother metal 33 is pure Ni substrate, and thickness is 1mm.
Intermediate layer 2 used by this step is defined as Sn-27 wt.%Ni hybrid particles pricker according to chip back coating and substrate
Material, i.e. component A is Ni, and component B is Sn, and wherein, the quality of component A accounts for the 27% of the quality summation of component A, component B.Wherein Sn,
The particle diameter of Ni is respectively 40 m and 10 m, and adds appropriate scaling powder and make paste and be coated in the Ni substrate of mother metal 33.
III, the sandwich structure of composition is placed in the fixture 4 of design and be fixed；Fixture 4 is provided with inside groove, described inside groove
Shape keeps consistent with mother metal 33, and length and width size is more than the length of mother metal 33,0.1 ~ 0.2mm of width, and its degree of depth is less than mother
Material 33 thickness 0.5mm.
IV, utilize heater that fixture 4 is heated, make intermediate layer 2 reach predetermined fusion temperature by conduction of heat；
Heater used should be equipped with temperature survey and feedback system, the set heating-up temperature fusing point 10 ~ 30 DEG C higher than Sn, described in add
Thermal can be sensing heating, microwave heating or Hot-blast Heating etc..
V, utilize pressure-regulating device 5 that mother metal 1 applies pressure and keep the close contact of sandwich structure and predetermined
At a temperature of be incubated the regular hour；Size reasonable according to required weld seam determines pressure size, about 1MPa；Keep above-mentioned pressure
On the premise of be cooled to room temperature.As in figure 2 it is shown, component A 21 in intermediate layer 22, component B 22, third phase component C 23, help weldering
Agent 24 is dispersed in system.
Above-mentioned interconnection manufacturing process was achieved that interconnection within 30 minutes.By test, the joint that the present embodiment obtains
Intensity > 50MPa, the good airproof performance of structure, service temperature > 400 DEG C, weld seam Young's modulus is 150 ~ 170GPa.Use existing
The solder of the Sn-Ni alloy of technology, and use traditional Transient liquid phase method to form high-melting-point interconnection solder joint it is generally required to 1 hour with
On, and the intensity of joint is less than 40MPa.
This method is by adding appropriate Ni granule in solder, it is possible to reduce the diffusion length of Sn to a great extent also
Increasing the contact area with Ni, described component A and component B at high temperature define Ni3Sn4, greatly reduce generation compound
Inhibition to metal counterdiffusion, controls elapsed time within dozens of minutes by several hours.The method is simple to operate,
Without special protection, cost is relatively low, joint performance is good, it is possible to adapt to the application requirement of various severe rugged environment.Wink after improvement
State liquid phase method, while having both high-melting-point and electric conductivity, it is possible to the shortening response time of increasing, raising production efficiency, at vapour
Car electronics, great power LED constant power electronics there is extremely important actual application prospect.
Embodiment 2
See shown in accompanying drawing 1, Fig. 2 and Fig. 4, under a kind of atmospheric environment, quickly realize the mixed of high melting compound and refractory metal
Closing connector connecting method, this method of attachment comprises the following steps:
I, connected material carries out surface process: to the connection surface 1200# sand paper of mother metal 1 and mother metal 33 by its surface
Polish and remove the greasy dirt impurity on surface, immersing ethanol solution ultrasonic cleaning 3 ~ 5min afterwards.
II, mother metal 33 being placed in lower floor, mother metal 1 is placed in upper strata and intermediate layer 2 and ties at pilot process one sandwich
Structure, mother metal 1 and the equal horizontal cross of mother metal 33 are placed.Above-mentioned mother metal 1 used is chip, chip material is Si, SiC, GaN,
InP or GaAs, chip back coated metal is Ni, Ni layer thickness 8 m；Mother metal 33 is pure Ni substrate, and thickness is 1mm.In Suo Yong
According to chip back coating and substrate, interbed 2 determines that employing Sn-30 wt.%Ni hybrid particles solder, i.e. component A are Ni, component B
For Sn, wherein, the quality of component A accounts for the 30% of the quality summation of component A, component B.Wherein the particle size of Sn, Ni is respectively 40
M and 10 m, and add appropriate scaling powder and make paste and be coated in the Ni substrate of mother metal 33.
III, the sandwich structure of composition is placed in the fixture 4 of design and be fixed；Fixture 4 is provided with inside groove, described inside groove
Shape keeps consistent with mother metal 33, and length and width size is more than the length of mother metal 33,0.1 ~ 0.2mm of width, and its degree of depth is less than mother
Material 33 thickness 0.5mm.
IV, utilize heater that fixture 4 is heated, make intermediate layer 2 reach predetermined fusion temperature by conduction of heat；
Wherein, heater used should be equipped with temperature survey and feedback system, the set heating-up temperature fusing point 10 ~ 30 DEG C higher than Sn；
Described heater can be sensing heating, microwave heating or Hot-blast Heating etc..
V, utilize pressure-regulating device 5 that mother metal 1 applies pressure and keep the close contact of sandwich structure and predetermined
At a temperature of be incubated the regular hour；Size reasonable according to required weld seam determines pressure size, about 1MPa；Keep above-mentioned pressure
On the premise of be cooled to room temperature.
Above-mentioned interconnection manufacturing process was achieved that interconnection within 10-30 minute.By test, what the present embodiment obtained connects
The intensity of head > 50MPa, the good airproof performance of structure, service temperature > 400 DEG C, weld seam Young's modulus is 60GPa.And use existing skill
The method of art, solder is that to obtain the Young's modulus of weld seam be 150GPa for the solder paste of Ni+Sn mixing, and the intensity of joint is less than
40MPa.As can be seen here, weld seam Young's modulus is substantially reduced, and the intensity of joint is improved.
This method is Ni granule by adding in solder in right amount, it is possible to reduce the diffusion length of Sn to a great extent also
Increase and the contact area of Ni, greatly reduce the generation compound inhibition to metal counterdiffusion, by elapsed time by
Within several hours, control within dozens of minutes (this case is 10-30 minute).Additionally, the content of Ni in increase solder so that it is with Sn
Completely reaction while and have certain remnants, reduce the purpose of weld seam Young's modulus, Young's modulus is reduced by 150GPa
To 60GPa.The joint that the interconnection manufacturing process of this example obtains, also can be to a certain degree while having both high-melting-point and electric conductivity
The Young's modulus of upper control weld seam, before having extremely important actual application in automotive electronics, great power LED constant power electronics
Scape.
Embodiment 3
See shown in Fig. 1 and Fig. 4, under a kind of atmospheric environment, quickly realize high melting compound, refractory metal and third phase gold
Belonging to the method for attachment of line and staff control's joint, this method of attachment comprises the following steps:
I, connected material carries out surface process: to the connection surface 1200# sand paper of mother metal 1 and mother metal 33 by its surface
Polish and remove the greasy dirt impurity on surface, immersing ethanol solution ultrasonic cleaning 3 ~ 5min afterwards.
II, mother metal 33 being placed in lower floor, mother metal 1 is placed in upper strata and intermediate layer 2 and ties at pilot process one sandwich
Structure, mother metal 1 and the equal horizontal cross of mother metal 33 are placed.Above-mentioned mother metal 1 used is chip, chip material is Si, SiC, GaN,
InP or GaAs, chip back coated metal is thickness 8 m of Ni, Ni layer；Mother metal 33 is pure Ni substrate, and thickness is 1mm.
Wherein, intermediate layer 2 used according to chip back coating and substrate be defined as Sn-20 wt.%Ni-10 wt.%Al mix
Closing granule solder, i.e. component A is Ni, and component B is Sn, and third phase grain fraction C is Al, wherein, and component A, component B, third phase
The percentage ratio of the quality summation that the quality of grain fraction C accounts for component A, component B, third phase grain fraction C respectively is respectively 20%,
70%、10%.Wherein the particle diameter of Sn, Ni, Al is respectively 40 m, 10 m, 20 m, and adds appropriate scaling powder and make paste coating
In the Ni substrate of mother metal 33.
III, the sandwich structure of composition is placed in the fixture 4 of design and be fixed；Fixture 4 is provided with inside groove, described inside groove
Shape keeps consistent with mother metal 33, and length and width size is more than the length of mother metal 33,0.1 ~ 0.2mm of width, and its degree of depth is less than mother
Material 33 thickness 0.5mm.
IV, utilize heater that fixture 4 is heated, make intermediate layer 2 reach predetermined fusion temperature by conduction of heat；
Wherein, heater used should be equipped with temperature survey and feedback system, the set heating-up temperature fusing point 10 ~ 30 DEG C higher than Sn；
Described heater can be sensing heating, microwave heating or Hot-blast Heating etc..
V, utilize pressure-regulating device 5 that mother metal 1 applies pressure and keep the close contact of sandwich structure and predetermined
Temperature 250 DEG C at be incubated within one hour；Size reasonable according to required weld seam determines pressure size, about 1MPa；In holding
It is cooled to room temperature on the premise of stating pressure.
Above-mentioned interconnection manufacturing process was achieved that interconnection in one hour.The nucleocapsid structure formed during heating and third phase
The microstructure schematic diagram of grain mixing is as shown in Figure 3.As it is shown on figure 3, in heating process, component A 21 in intermediate layer 22, group
Dividing B 22 to form nucleocapsid structure, third phase component C 23 space between nucleocapsid structure, scaling powder 24 is dispersed therein.
By test, the intensity of the joint that the present embodiment obtains > 50MPa, the good airproof performance of structure, service temperature > 400
DEG C, weld seam Young's modulus is 20GPa.And the method using prior art, solder is the weldering obtained of the solder paste of Ni+Sn mixing
The Young's modulus of seam is 150GPa, and the intensity of joint is less than 40MPa.As can be seen here, weld seam Young's modulus is substantially reduced.
This method is Ni granule by adding in solder in right amount, it is possible to reduce the diffusion length of Sn to a great extent also
Increase and the contact area of Ni, greatly reduce the generation compound inhibition to metal counterdiffusion, by elapsed time by
Within a few hours control one hour.Increase the content of Ni in solder so that it is while reacting completely with Sn and have certain
Remnants, reduce the purpose of weld seam Young's modulus.The more important thing is, the Al granule of addition does not reacts with the Sn in solder
And it is retained in inside weld seam, in the case of not affecting fusing point, greatly reduce the Young's modulus of joint microstructure, be reduced to
20GPa, reaches the matched well of chip and substrate.The joint that the interconnection manufacturing process of this example obtains is having both high-melting-point and conduction
While property, also can control the Young's modulus of weld seam to a certain extent, in automotive electronics, great power LED constant power electronics
There is extremely important actual application prospect.
Embodiment 4
See shown in accompanying drawing 1, Fig. 2 and Fig. 4, under a kind of atmospheric environment, quickly realize the method for attachment of high melting compound joint,
This method of attachment comprises the following steps:
I, connected material carries out surface process: to the connection surface 1200# sand paper of mother metal 1 and mother metal 33 by its surface
Polish and remove the greasy dirt impurity on surface, immersing ethanol solution ultrasonic cleaning 3 ~ 5min afterwards.
II, mother metal 33 being placed in lower floor, mother metal 1 is placed in upper strata and intermediate layer 2 and ties at pilot process one sandwich
Structure, mother metal 1 and the equal horizontal cross of mother metal 33 are placed.Above-mentioned mother metal 1 used is chip, chip material is Si, SiC, GaN,
InP or GaAs, chip back coated metal be the thickness of Ni, Ni layer be 8 m；Mother metal 33 is pure Ni substrate, and thickness is 1mm.
Wherein, intermediate layer 2 used is defined as Sn-24 wt.%Ni hybrid particles solder according to chip back coating and substrate,
I.e. component A is Ni, component B be Sn wherein, the percentage ratio of the quality summation that component A accounts for component A, component B is respectively 24%.Wherein
The particle diameter of Sn, Ni is respectively 40 m and 10 m, and adds appropriate scaling powder and make paste and be coated in the Ni substrate of mother metal 33
On.
III, the sandwich structure of composition is placed in the fixture 4 of design and be fixed；Fixture 4 is provided with inside groove, described inside groove
Shape keeps consistent with mother metal 33, and length and width size is more than the length of mother metal 33,0.1 ~ 0.2mm of width, and its degree of depth is less than mother
Material 33 thickness 0.5mm.
IV, utilize heater that fixture 4 is heated, make intermediate layer 2 reach predetermined fusion temperature by conduction of heat；
Wherein, heater used should be equipped with temperature survey and feedback system, the set heating-up temperature fusing point 10 ~ 30 DEG C higher than Sn；
Described heater can be sensing heating, microwave heating or Hot-blast Heating etc..
V, utilize pressure-regulating device 5 that mother metal 1 is applied certain pressure and keep the close contact of sandwich structure also
Ultrasonic generator butt welded seam is utilized to assist welding 2 ~ 20s.Size reasonable according to required weld seam determines pressure size, about
1MPa。
VI, after ultrasonic applying completes, ultrasonic generator car gone and stops heating so that it is being slowly cooled to room temperature.
Above-mentioned steps V, in reflux course, uses ultrasonic generator to act on mother metal 33, not to mother metal 1
Producing any pressure, ultrasonic applying cools down after completing.
Above-mentioned interconnection manufacturing process was achieved that interconnection in ten seconds.By test, joint strong that the present embodiment obtains
Degree 60MPa, the good airproof performance of joint design, service temperature > 400 DEG C, weld seam Young's modulus is 150 ~ 170GPa.Use existing skill
The solder of the Sn-Ni alloy of art, and use traditional Transient liquid phase method to form high-melting-point interconnection solder joint it is generally required to 1 hour with
On, and the intensity of joint is less than 40MPa.This method can be under the assosting effect of ultrasound wave, in chip-underlying structure, logical
Cross design of material to reduce the diffusion length of atom, accelerate response speed, also by ultrasonic " cavitation " and " acoustic streaming " effect,
Make Sn with Ni react the compound generated from Ni sur-face peeling, accelerate the formation of intermetallic compound, it is possible to tens of seconds time
The interior high-melting-point joint generating the full compound of high-melting-point or compound and remaining Ni composition.Obtained joint have high intensity (40 ~
60MPa), the characteristic such as high leakproofness, wide service temperature, high stability, high conductivity.With traditional Transient liquid phase method a few hours
Time is compared, and this method can complete within tens of seconds, and the welding point generated has higher shear strength and conduction
Performance, meets the application requirement of third generation elastic braid quasiconductor.
Embodiment 5
Component A of interconnection solder is Cu, and component B is Sn, and third phase grain fraction C is Mg, wherein, and third phase grain fraction C
The percentage ratio of the quality summation that quality accounts for component A, component B, third phase grain fraction C is 10%.Wherein, the amount foot of described component A
Enough the amount of component B is all consumed, form compound Cu6Sn5。
Additive method step is with embodiment 1.
Above-mentioned interconnection manufacturing process is used to be achieved that interconnection in five ten minutes.By test, the present embodiment obtains
Intensity 40MPa of joint, the good airproof performance of joint design, service temperature > 400 DEG C, weld seam Young's modulus is 25GPa.Use
The weld seam Young's modulus that the method for prior art and solder obtain is 150GPa, it can be seen that, weld seam Young's modulus is substantially reduced.
Embodiment 6
Component A of interconnection solder is Au, and component B is Sn, and third phase grain fraction C is Graphene, wherein, and third phase grain fraction
The percentage ratio of the quality summation that the quality of C accounts for component A, component B, third phase grain fraction C respectively is 30%.Wherein, described component
The amount of component B is enough all consumed by the amount of A, forms compound AuSn4、AuSn2Or AuSn.
Additive method step is with embodiment 4.
Above-mentioned interconnection manufacturing process is used to be achieved that interconnection at 40 minutes.By test, the present embodiment obtains
Intensity 35MPa of joint, the good airproof performance of joint design, service temperature > 400 DEG C, weld seam Young's modulus is 20GPa.Use existing
The weld seam Young's modulus having the method for technology and solder to obtain is 150GPa, it can be seen that, weld seam Young's modulus is substantially reduced.
Above content is to combine concrete preferred implementation further description made for the present invention, it is impossible to assert
Being embodied as of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of present inventive concept, it is also possible to make some simple deduction or replace, all should be considered as belonging to the present invention's
Protection domain.
Claims (10)
1. an interconnection solder, it is characterised in that: the heating technological temperature of its product applied is T, described interconnection solder bag
Containing fusing point more than component A of T, fusing point less than component B of T, fusing point third phase component C more than T；Described third phase component C accounts for
Component A, component B, third phase component C quality summation 0 ~ 30%；Wherein at described heating process warm between component A and component B
The lower reaction of degree forms compound AxBy；The ratio of described component A and the amount of the material of component B more than x/y, described third phase component C with
Component A, component B do not react, and the hardness of described third phase component C is less than component A, component B and compound AxByHard
Degree.
Interconnection solder the most according to claim 1, it is characterised in that: described compound AxByComponent A structure is surrounded for component B
The nucleocapsid structure of the A@B become.
3. according to the interconnection solder of claim 1 or 2 or described, it is characterised in that: described component B includes that Sn, described component A are
In Ni, Ag, Cu, Au at least one, described third phase component C is at least one in Al, Mg, SiC.
4. according to claim 3 or described interconnection solder, it is characterised in that: the Surface coating of described third phase component C have Ag,
In Au or Sn at least one.
Interconnection solder the most according to claim 3, it is characterised in that: described component A is Ni, and described component B includes Sn, institute
State AxByCompound is Ni3Sn4。
Interconnection solder the most according to claim 3, it is characterised in that: when described component A is Cu, described component B is Sn, institute
State AxByCompound is Cu6Sn5Or Cu3Sn；When described component A is Ag, described component B is Sn, described AxByCompound is Ag3Sn；
When described component A is Au, described component B is Sn, described AxByCompound is AuSn4、AuSn2Or AuSn.
Interconnection solder the most according to claim 3, it is characterised in that: described component A, component B and component C are spherical, sheet
Shape or bar-shaped at least one；Described interconnection solder also comprises scaling powder.
8. an interconnection manufacturing process, it is characterised in that: it uses the interconnection solder as described in claim 1 ~ 7 any one to incite somebody to action
Mother metal one and mother metal three link together, and it comprises the following steps:
Step S1: mother metal one and mother metal three are carried out surface process；
Step S2: described interconnection solder is put into as intermediate layer formation sandwich structure between mother metal one, mother metal three, and uses
Described sandwich structure is fixed by fixing component；
Step S3: use heater that fixing component is heated, make intermediate layer two fusing by conduction of heat；Employing pressure is adjusted
Regulating device applies pressure and keeps sandwich structure mother metal one, and is incubated 3 ~ 60s at a temperature of described heating technique, then keeps
It is cooled to room temperature under above-mentioned pressure.
Interconnection manufacturing process the most according to claim 8, it is characterised in that: in step S2, use heater to fixing
When component heats, described sandwich structure is applied oscillator field or ultrasonic field.
Interconnection manufacturing process the most according to claim 8, it is characterised in that: described interconnection solder be pre-tabletting structure or
Paste；Described heater can be at least one in induction heating apparatus, microwave heating equipment or hot air heating apparatus；Described mother
Material one and the equal horizontal cross of mother metal three are placed；Described mother metal three is fixing with fixing device to be connected, the outside of described mother metal one and pressure
Apparatus for adjusting force contacts.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107096988A (en) * | 2017-05-11 | 2017-08-29 | 哈尔滨理工大学 | One kind quickly prepares electronic package material Cu3The method of Sn intermetallic compounds |
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| CN108857133A (en) * | 2017-05-09 | 2018-11-23 | 松下知识产权经营株式会社 | Attachment structure |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1262783A (en) * | 1998-03-30 | 2000-08-09 | 株式会社山武 | Soldering material for die bonding |
| JP2011054892A (en) * | 2009-09-04 | 2011-03-17 | Nihon Superior Co Ltd | Solder bonding using conductive paste |
| WO2012023440A1 (en) * | 2010-08-18 | 2012-02-23 | 新日鉄マテリアルズ株式会社 | Solder ball for semiconductor mounting and electronic member |
| CN102922071A (en) * | 2012-10-25 | 2013-02-13 | 哈尔滨工业大学 | Method for preparing low-temperature interconnection/high-temperature serving joints by using nano intermetallic compound particles |
| CN103168392A (en) * | 2011-02-09 | 2013-06-19 | 株式会社村田制作所 | Connecting structure |
| US20140158423A1 (en) * | 2010-04-23 | 2014-06-12 | Iowa State University Research Foundation, Inc. | Rapidly solidifying Pb-free Sn-Ag-Cu-Al or Sn-Cu-Al solder |
| CN104625466A (en) * | 2015-01-21 | 2015-05-20 | 哈尔滨工业大学深圳研究生院 | Tin-radical welding flux/copper particle composite welding flux capable of forming high-temperature welding spots rapidly at low temperature |
| CN104889595A (en) * | 2015-06-09 | 2015-09-09 | 郴州市金贵银业股份有限公司 | Graphene oxide/nano-silver composite brazing material and preparation method thereof |
| CN105023855A (en) * | 2015-05-29 | 2015-11-04 | 哈尔滨工业大学深圳研究生院 | Chip bonding method for fast generating high-melting-point joint and ultrasonic pressure head design |
| CN105070693A (en) * | 2015-09-14 | 2015-11-18 | 北京科技大学 | Low-temperature-connected high-temperature-resistant encapsulation connecting material and encapsulation connecting technology thereof |
-
2016
- 2016-09-23 CN CN201610847725.3A patent/CN106271177B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1262783A (en) * | 1998-03-30 | 2000-08-09 | 株式会社山武 | Soldering material for die bonding |
| JP2011054892A (en) * | 2009-09-04 | 2011-03-17 | Nihon Superior Co Ltd | Solder bonding using conductive paste |
| US20140158423A1 (en) * | 2010-04-23 | 2014-06-12 | Iowa State University Research Foundation, Inc. | Rapidly solidifying Pb-free Sn-Ag-Cu-Al or Sn-Cu-Al solder |
| WO2012023440A1 (en) * | 2010-08-18 | 2012-02-23 | 新日鉄マテリアルズ株式会社 | Solder ball for semiconductor mounting and electronic member |
| CN103168392A (en) * | 2011-02-09 | 2013-06-19 | 株式会社村田制作所 | Connecting structure |
| CN102922071A (en) * | 2012-10-25 | 2013-02-13 | 哈尔滨工业大学 | Method for preparing low-temperature interconnection/high-temperature serving joints by using nano intermetallic compound particles |
| CN104625466A (en) * | 2015-01-21 | 2015-05-20 | 哈尔滨工业大学深圳研究生院 | Tin-radical welding flux/copper particle composite welding flux capable of forming high-temperature welding spots rapidly at low temperature |
| CN105023855A (en) * | 2015-05-29 | 2015-11-04 | 哈尔滨工业大学深圳研究生院 | Chip bonding method for fast generating high-melting-point joint and ultrasonic pressure head design |
| CN104889595A (en) * | 2015-06-09 | 2015-09-09 | 郴州市金贵银业股份有限公司 | Graphene oxide/nano-silver composite brazing material and preparation method thereof |
| CN105070693A (en) * | 2015-09-14 | 2015-11-18 | 北京科技大学 | Low-temperature-connected high-temperature-resistant encapsulation connecting material and encapsulation connecting technology thereof |
Non-Patent Citations (1)
| Title |
|---|
| 黄亦龙: "石墨烯+Sn-Ag-Cu 复合钎料性能研究", 《万方硕士学位论文数据库》 * |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110418692B (en) * | 2017-03-31 | 2021-11-12 | 三菱综合材料株式会社 | Molded body for bonding and method for producing same |
| CN110418692A (en) * | 2017-03-31 | 2019-11-05 | 三菱综合材料株式会社 | Engagement formed body and its manufacturing method |
| CN108857133A (en) * | 2017-05-09 | 2018-11-23 | 松下知识产权经营株式会社 | Attachment structure |
| CN108857133B (en) * | 2017-05-09 | 2022-05-03 | 松下知识产权经营株式会社 | Mounting structure |
| CN107096988A (en) * | 2017-05-11 | 2017-08-29 | 哈尔滨理工大学 | One kind quickly prepares electronic package material Cu3The method of Sn intermetallic compounds |
| CN108465892A (en) * | 2018-02-05 | 2018-08-31 | 东莞市新玛博创超声波科技有限公司 | Flux-free ultrasonic cryogenic method for welding and application under copper-based material atmospheric conditions |
| CN108465892B (en) * | 2018-02-05 | 2020-08-07 | 东莞市新玛博创超声波科技有限公司 | Fluxing agent-free ultrasonic low-temperature brazing method for copper-based material under atmospheric condition and application |
| CN109759742A (en) * | 2019-03-13 | 2019-05-17 | 重庆理工大学 | A kind of solder and welding method of no soldering flux |
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| CN110153592A (en) * | 2019-06-20 | 2019-08-23 | 常熟理工学院 | A kind of In-Ni system solder and preparation method thereof |
| CN111014864B (en) * | 2019-12-10 | 2022-04-01 | 太原理工大学 | Preparation method for joint with directional grain brazing seam through rapid ultrasonic-assisted manufacturing |
| CN111014864A (en) * | 2019-12-10 | 2020-04-17 | 太原理工大学 | Preparation method for joint with directional grain brazing seam through rapid ultrasonic-assisted manufacturing |
| CN111151836B (en) * | 2020-01-13 | 2021-12-24 | 中国船舶重工集团公司第七二五研究所 | Connection method and application of high-temperature superconducting tape |
| CN111151836A (en) * | 2020-01-13 | 2020-05-15 | 中国船舶重工集团公司第七二五研究所 | Connection method and application of high-temperature superconducting tape |
| CN112191968A (en) * | 2020-10-14 | 2021-01-08 | 哈尔滨工业大学（深圳） | Packaging method for enhancing metallurgy of nano solder interface |
| CN112191968B (en) * | 2020-10-14 | 2022-05-10 | 哈尔滨工业大学（深圳） | Packaging method for enhancing metallurgy of nano solder interface |
| CN114559180A (en) * | 2022-03-21 | 2022-05-31 | 太原理工大学 | Silicon carbide particle reinforced magnesium alloy brazing filler metal and preparation method and application thereof |
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