CN103151430B - Nano metal particles realize the preparation method of the low-temperature metal interface connection of LED - Google Patents
Nano metal particles realize the preparation method of the low-temperature metal interface connection of LED Download PDFInfo
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- CN103151430B CN103151430B CN201110403731.7A CN201110403731A CN103151430B CN 103151430 B CN103151430 B CN 103151430B CN 201110403731 A CN201110403731 A CN 201110403731A CN 103151430 B CN103151430 B CN 103151430B
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Abstract
The invention belongs to LED chip preparation field, and the preparation method of the low-temperature metal interface connection of LED is realized it discloses a kind of nano-metal particle, is included the following steps：Nano-metal particle slurry is prepared into the heat sink coating surface in metal heat sink；LED chip is placed on nano particle slurry, and comes into full contact with the metal layer at the LED chip back side and nano particle slurry；Under oxygen-free atmosphere, low temperature reflux processing is carried out to step S1, realizes that the metal interface of LED chip and metal heat sink connects.The present invention is using micro-nano metallic particles slurry as thermal interfacial material, it can match with existing sealed in unit with production line, that is existing Sn parent metals can directly be substituted, (SnPb solders, SnAgCu solders etc.), the metal interface for obtaining LED wafer and metal heat sink at a lower temperature connects, and can be effectively reduced production cost, improve production efficiency.
Description
Technical field
The present invention relates to LED chip preparation field, more particularly to a kind of nano-metal particle to realize low-temperature metal circle of LED
The preparation method of face connection.
Background technology
With the continuous development of integrated circuit technique, electronic product is to light, thin, short, small and functional diversities and height
Reliability direction is developed, so as to propose new requirement to Electronic Encapsulating Technology.In order to adapt to this special requirement, flip-chip skill
Art is increasingly widely used.Flip chip technique is that chip upset is formed with floor by forming salient point in chip surface
Connection, reduces package dimension, meets the high-performance (such as high speed, high frequency, the pin of smaller) of electronic product, and encapsulates close
Degree is high, and product is had good electric property and heat transfer property.Based on above-mentioned advantage, flip chip technology (fct), which becomes, most to be had
A kind of important technology that can adapt to high-density electronic package requirement of potentiality.Sum up, FC technologies are mainly characterized by：Base
Chip is mounted directly on plate；Corresponding interconnection location must have solder joint-salient point；The solder joint of yoke and chip is mirrored into symmetrically；Together
Shi Shixian is electrically and mechanically connected.As it can be seen that during Flip-Chip Using, salient point formation is the key in technical process.
Fig. 1 show the structure of conventional flip chip salient point, its composition includes：Chip 1, passivation layer 2, aluminum pad 3, salient point
Lower metal layer UBM (Under-Bump Metallurgy) 4, salient point 5.Salient point 5 be formed on chip aluminium electrode welding zone it is convex
Electrode is played, chip actual load is made on the package substrates such as PCB by the electrode.To reach bump metal 5 and aluminum pad 3 and passivation layer
2 good adhesivenesses, prevent bump metal 5 from generating undesirable intermetallic compound with aluminum pad 3, generally should first exist again
The multiple-layer metallization layer 4 for having adhesion layer, diffusion impervious layer and conductive layer is prepared under bump metal.Typical adhesiving metal have Cr,
Ti, Ni, TiN etc., diffusion impervious layer metal have W, Mo, Ni etc., and conducting metal then commonly uses Au, Cu, Pb/Sn etc., this variety of gold
Categoryization layer is completed frequently with the methods of sputtering, evaporation, chemical plating, plating.The making material of bump metal 5 be mostly Au, Cu,
Pb/Sn, In or combinations thereof.Forming the method for salient point 5 mainly has galvanoplastic, electroless plating method, stud bump to form method, mould
Plate printing solder method and heat injection solder method etc..
In these salient points, Pb/Sn solder bumps are because of the attention with outstanding advantages.Since it is hemispherical,
During flip chip bonding with solder fusing can autoregistration position, can control Pb/Sn solders collapses degree and bump height, thus also known as
For controlled collapse chip connection technology (C4).Although solder is with higher thermal conductivity and reliability, solder
Conduction, heat conductivility not as simple metal it is good, and due in brazing process brazing flux volatilization etc. factor can produce cavity presence,
And metal interface compound layer can be generated between solder and copper pad so as to which there is larger interface resistance.Based on above-mentioned original
Cause, solder alloy are not well positioned to meet the heat conduction needs of large-scale integrated high-density packages as thermal interfacial material.It is heavier
Want, when the size of packaging density increase salient point reduces, alloy bump can be eaten up by pad metal, form thick metal
Between compound layer, especially in device operation, namely be powered and high temperature in the case of, intermetallic compound not medium well
It is long, it is possible to which that whole salient point all becomes intermetallic compound, and this not only increases interface resistance, reduces heat conduction energy
Power.And due to factors such as migration of elements, the generations in cavity, it is possible to cause solder joint to mechanically connect failure, therefore solder closes
Gold cannot meet the needs of high density interconnects small size salient point.Conventional solder is based on SnPb alloys, with industrial circle
The continuous enhancing of the environmental protection meaning, European Union WEEE, ROHS etc. prohibit Pb decrees and implement in succession, and China also begins to promulgate without Pb methods
Order, encapsulation industry starts to put forward higher requirements Pb-free solder, but current Pb-free solder is not well positioned to meet height
The needs of density encapsulation.
Polymer salient point is a kind of conducting polymer, is mainly connected with epoxide resin conductive adhesive.Its main feature is that salient point
Manufacture craft is simple, and connection temperature is less than 160 degrees Celsius, and can use cheap substrate, is a kind of interconnection efficiently, inexpensive
Salient point.But any adhesive all cannot directly be connected with Al electrodes, gold solder disk is used, interface contact resistance is big, and
Theme is the organic matters such as epoxy resin, its reliability does not have metal salient point ideal.It is and unstable there are thermal resistance so that when heating up
Circuit parameter can be caused to drift about, the failure behaviour such as module cracking when the easy moisture absorption causes to weld.
The content of the invention
Based on the above problem, problem to be solved by this invention is that providing a kind of nano-metal particle realizes that LED's is low
The preparation method of warm metal interface connection.
A kind of nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, includes the following steps：
S1, by nano-metal particle slurry prepare metal heat sink heat sink coating surface；
S2, will be placed on metal heat sink through expanding the brilliant LED chip handled, and make the metal layer and nanogold of chip back
Belong to slurry to come into full contact with.
Under S3, oxygen-free atmosphere, low temperature reflux processing is carried out to step S2, obtains LED chip and heat sink low thermal resistance metal
Interface connects；
The nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, in step S1：
The heat sink coating is silvering or gold plate；
In nano-metal particle slurry, the particle diameter of metallic particles is tens nanometers~hundreds of nanometers；
The nano-metal particle slurry be nano-metal particle prepared in heat sink coating surface by dispenser or
Nano-metal particle is prepared in heat sink coating surface by mode of printing；
The nano-metal particle slurry is nano-Ag particles slurry, nanometer SnAgCu alloy pulps or nanometer Sn particles
Slurry.
The nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, in step S3, low temperature reflux
During processing, reflux temperature is 100~150 DEG C, and reflux soaking time is 2~60 seconds.
The nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, in step S3, the welding
Technology is included in the reflow soldering on existing die bond board or the reflow soldering in reflow ovens；The metal at the LED chip back side
Layer is silver, Au-Sn or Sn.
The present invention uses micro-nano metallic particles slurry as thermal interfacial material, can be with existing sealed in unit and production
Line matches, that is to say, that can directly substitute existing Sn parent metals, obtain metal salient point, Ke Yiyou at a lower temperature
Effect ground reduces production cost, improves production efficiency.The present invention obtains passes through original between metal salient point and ubm layer (UBM)
Son diffusion realizes that metal connects, and thick alloy-layer is formed between traditional solder bump and UBM layer, so as to effective
Ground reduces interface resistance and contact resistance, and heat when improving LED chip work sheds ability.
The present invention obtains metal salient point at low temperature, but undergoes the first low temperature reflux postwelding, has no longer been micro-nano
Particle, so that with higher fusion temperature, can bear follow-up high-temperature work environment, this kind of technique can be effectively prevented from
The shortcomings that present in liquid thermal interfacial material or solder.
Brief description of the drawings
Fig. 1 is the structure of conventional flip chip salient point
Fig. 2 is the preparation technology flow chart for the low-temperature metal interface connection that nano-metal particle of the present invention realizes LED.
Embodiment
A kind of nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, as shown in Fig. 2, including such as
Lower step：
S1, by nano-metal particle slurry prepare metal heat sink heat sink coating (namely ubm layer,
Under-Bump Metallurgy, i.e. UBM) surface；
S2, will be placed on metal heat sink through expanding the brilliant LED chip handled, and make the metal layer and nanogold of chip back
Belong to slurry to come into full contact with.
Under S3, oxygen-free atmosphere, low temperature reflux processing is carried out to step S2, obtains LED chip and heat sink low thermal resistance metal
Interface connects；
The nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, in step S1：
The heat sink coating is silvering or gold plate；
In nano-metal particle slurry, the particle diameter of metallic particles is several nanometer~hundreds of nanometer；
The nano-metal particle slurry be nano-metal particle prepared in heat sink coating surface by dispenser or
Nano-metal particle is prepared in heat sink coating surface by mode of printing；Wherein, the latter is imitated than the production that the former has higher
Rate, and cost also can be lower, but the former is suitable for the making of high density small size salient point；With the method for mould printing,
Using different templates, the control bump size size such as control printing pressure clearance height；Using mode for dispensing glue, with different
The various sizes of salient point of the gain of parameter such as Glue dripping head, control pressure；
The nano-metal particle slurry is nano-Ag particles slurry, nanometer SnAgCu alloy pulps or nanometer Sn particles
Slurry.
The nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, in step S2, low temperature reflux
During processing, reflux temperature is 100~150 DEG C, and reflux soaking time is 2~60 seconds；According to the difference of paste composition, in view of slurry
In contain volatile aids, direct Reflow Soldering, in order to protect salient point is not oxidized can also select in hydrogen or inertia
(i.e. oxygen-free atmosphere) low temperature reflux is handled under atmosphere protection；Since the fusing point of micro-nano metallic particles slurry is than relatively low, relatively low
Nano-metal particle slurry can melt at temperature (100~150 DEG C), become metal salient point after cooling；According to paste composition
Difference, the suitable optimal reflux temperature of selection, while nano-metal particle slurry melts, realizes and is fused with heat sink coating
Connection, while salient point also has relatively good quality.By keeping the temperature a period of time, nano-metal particle is set fully to melt, it is organic
Thing fully volatilizees, reduce salient point inside cavity the defects of.
The nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, in step S3, the welding
Technology is included in the reflow soldering on existing eutectic board or the reflow soldering in reflow ovens；The metal at the LED chip back side
Layer is silver, Au-Sn or Sn.
The nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, in step S3 after, also
It need to carry out cleaning treatment：
The invention is according to the differences of the carriers such as the difference of micro-nano metal paste species, contained auxiliary agent, in Reflow Soldering
If organic substance residues after connecing, in order to reduce the corrosivity of these organic matters and improve the reliability of LED, cleaning can be added
Technique, generally use industrial alcohol, acetone or deionized water are cleaned.
Welding finishes, according to the component of nanometer silver paste, if organic residue, then need to carry out the stent after die bond etc.
Ion Cleaning, finally drying is in case next process.It is demonstrated experimentally that the bonding metallic layer after sintering is fine and close, thermal conductivity height can be with
Reach 200W/K.m, its heat conductivility is substantially better than existing elargol, silver paste is connected with solder eutectic.Jointing metal interface also has
There is higher shear strength, disclosure satisfy that the mechanical connection requirement of LED wafer, and joint interface main component is Ag, old
The growth of intermetallic compound and the consumption problem of joint interface metal layer are substantially not present during change, can be very good to solve
The intermetallic compound growth at existing solder connection interface cause interface resistance become larger even linkage interface Problem of Failure.
The present invention uses micro-nano metallic particles slurry as thermal interfacial material, can be with existing sealed in unit and production
Line matches, that is to say, that can directly substitute existing Sn parent metals, obtain metal salient point, Ke Yiyou at a lower temperature
Effect ground reduces production cost, improves production efficiency.The present invention obtains passes through original between metal salient point and ubm layer (UBM)
Son diffusion realizes that metal connects, and thick alloy-layer is formed between traditional solder bump and UBM layer, so as to effectively
Interface resistance and contact resistance are reduced, heat when improving LED chip work sheds ability.
The present invention obtains metal salient point at low temperature, but undergoes the first low temperature reflux postwelding, has no longer been micro-nano
Particle, so that with higher fusion temperature, can bear follow-up high-temperature work environment, this kind of technique can be effectively prevented from
The shortcomings that present in liquid thermal interfacial material or solder.
Below in conjunction with the accompanying drawings, presently preferred embodiments of the present invention is described in further detail.
Embodiment 1
A kind of nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, includes the following steps：
S1, by particle diameter for tens nanometer Argent grain slurry prepare in heat sink coating surface；
The silver layer at the LED chip back side through expanding brilliant processing, be placed on the nano metal pulp layer on heat sink by S2, and makes
The metal layer at the LED chip back side and the coating of heat sink surface come into full contact with；
Under S3, hydrogen atmosphere, at 100 DEG C, Argent grain slurry is carried out to step S1 and carries out low temperature reflux processing 30 seconds, is obtained
Silver-colored salient point.
Embodiment 2
A kind of nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, includes the following steps：
S1, by particle diameter for tens nanometer SnAgCu alloy pulps prepare in metal substrate electrode layer surface；
Under S2, nitrogen atmosphere, at 180 DEG C, SnAgCu alloy pulps are carried out to step S1 and carry out 1 point of low temperature reflux processing
Clock, obtains SnAgCu alloy bumps；
The Au-Sn alloy-layers at the LED chip back side through expanding brilliant processing, be placed on SnAgCu alloy bumps by S3, and leads to
Ultra-sonic welding techniques are crossed, make the Au-Sn alloy-layers at the LED chip back side and SnAgCu alloy bumps integrally welded, nanometer
SnAgCu alloying pellets realize the low-temperature metal interface connection of LED.
Embodiment 3
A kind of nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, includes the following steps：
S1, by particle diameter for tens nanometer Sn slurries prepare in ceramic electrode layer surface；
Under S2, nitrogen atmosphere, at 200 DEG C, Sn slurries are carried out to step S1 and carry out low temperature reflux processing 10 minutes, obtain Sn
Salient point；
The Sn layers at the LED chip back side through expanding brilliant processing, be placed on Sn salient points by S3, and by ultra-sonic welding techniques,
Make Sn alloy-layers and the Sn salient points at the LED chip back side integrally welded, nanometer Sn particles realize that the low-temperature metal interface of LED connects
Connect.
It should be appreciated that the above-mentioned statement for present pre-ferred embodiments is more detailed, can not therefore think
It is the limitation to scope of patent protection of the present invention, scope of patent protection of the invention should be determined by the appended claims.
Claims (9)
1. a kind of nano-metal particle realizes the preparation method of the low-temperature metal interface connection of LED, suitable for flip-chip, it is special
Sign is, includes the following steps：
S1, by nano-metal particle slurry prepare metal heat sink heat sink coating surface；
S2, will be placed on metal heat sink through expanding the brilliant LED chip handled, and make the metal layer and nano metal of chip back
Grain slurry comes into full contact with；
Under S3, oxygen-free atmosphere, the product obtained to step S2 carries out low temperature reflux processing, obtains LED chip and heat sink low-heat
Hinder metal interface connection.
2. nano-metal particle according to claim 1 realizes the preparation method of the low-temperature metal interface connection of LED, it is special
Sign is, in step S1, the heat sink coating is Ag coating, Au coating.
3. nano-metal particle according to claim 1 realizes the preparation method of the low-temperature metal interface connection of LED, it is special
Sign is, in step S1, in nano-metal particle slurry, the particle diameter of metallic particles is several nanometer~hundreds of nanometer.
4. nano-metal particle according to claim 1 realizes the preparation method of the low-temperature metal interface connection of LED, it is special
Sign is, in step S1, the nano-metal particle slurry is to be prepared nano-metal particle in heat sink coating by dispenser
Surface.
5. nano-metal particle according to claim 1 realizes the preparation method of the low-temperature metal interface connection of LED, it is special
Sign is, in step S1, the nano-metal particle slurry is to be prepared nano-metal particle in heat sink plating by mode of printing
Layer surface.
6. nano-metal particle according to any one of claims 1 to 5 realizes the preparation side of the low-temperature metal interface connection of LED
Method, it is characterised in that in step S1, the nano-metal particle slurry is nano-Ag particles slurry, nanometer SnAgCu alloys are starched
Material or nanometer Sn particle slurries.
7. nano-metal particle according to claim 1 realizes the preparation method of the low-temperature metal interface connection of LED, it is special
Sign is, in step S3, when low temperature reflux is handled, reflux temperature is 100~150 DEG C, and reflux soaking time is 5~60 seconds.
8. nano-metal particle according to claim 1 realizes the preparation method of the low-temperature metal interface connection of LED, it is special
Sign is, in step S3, the reflux is included in the reflow soldering on existing eutectic board or the Reflow Soldering in road of flowing back
Connect.
9. nano-metal particle according to claim 1 realizes the preparation method of the low-temperature metal interface connection of LED, it is special
Sign is, in step S3, the metal layer at the LED chip back side is silver, Au-Sn or Sn.
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| CN104599976B (en) * | 2014-12-24 | 2018-01-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Leadless welding alloy and its preparation method and application |
| CN107538010B (en) * | 2017-07-17 | 2021-06-04 | 哈尔滨工业大学深圳研究生院 | Method for reducing sintering temperature of nano metal particles |
| CN109576766B (en) * | 2018-12-27 | 2020-09-25 | 大连理工大学 | Preparation of nano TiO by electrophoresis-electrodeposition2Method for enhancing Sn-based micro-bumps |
| CN111430522A (en) * | 2020-05-09 | 2020-07-17 | 东莞市中晶半导体科技有限公司 | L ED chip, L ED display screen module and manufacturing method |
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| CN1337295A (en) * | 2001-08-11 | 2002-02-27 | 无锡威孚吉大新材料应用开发有限公司 | Nano metal solder and its prepn |
| US7615476B2 (en) * | 2005-06-30 | 2009-11-10 | Intel Corporation | Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages |
| CN101592327B (en) * | 2009-07-07 | 2012-07-25 | 天津大学 | Power type LED lamp, encapsulation process and reflow soldering process equipment thereof |
| US8018027B2 (en) * | 2009-10-30 | 2011-09-13 | Murata Manufacturing Co., Ltd. | Flip-bonded dual-substrate inductor, flip-bonded dual-substrate inductor, and integrated passive device including a flip-bonded dual-substrate inductor |
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