CN103151430A - Preparation method of achieving low-temperature metal interface connection of light-emitting diode (LED) with nanometer metal granules - Google Patents
Preparation method of achieving low-temperature metal interface connection of light-emitting diode (LED) with nanometer metal granules Download PDFInfo
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Abstract
The invention belongs to the field of preparation of light-emitting diode (LED) chips, and discloses a preparation method of achieving low-temperature metal interface connection of an LED with nanometer metal granules. The method includes the following steps: preparing nanometer metal granule slurry on a heat sink plating surface of a metal heat sink; placing an LED chip on the nanometer metal granule slurry, and enabling a metal layer on the back of the LED chip to fully contacting with the nanometer metal granule slurry; and in an oxygen-free atmosphere, carrying out low-temperature reflux treatment on the step 1 to achieve the connection of the LED chip and the metal interface of the metal heat sink. The micro-nano metal granule slurry serves as heat interface material and can be matched with an existing packaging device and an existing production line, in other words, existing Sn-based welding flux (SnPb welding flux, SnAgCu welding flux and the like) can be directly replaced, at a relatively low temperature, the connection of the LED chip and the metal interface of the metal heat sink can be obtained, production cost can be effectively reduced, and working efficiency can be effectively improved.
Description
Technical field
The present invention relates to the LED chip preparation field, relate in particular to the preparation method that a kind of nano-metal particle is realized the low-temperature metal interface connection of LED.
Background technology
Along with the development of integrated circuit technique, electronic product is to light, thin, short, little and functional diversities and high reliability future development, thereby Electronic Encapsulating Technology is proposed Secretary.In order to adapt to this special requirement, flip chip technology (fct) is widely used day by day.Flip chip technique is by forming salient point at chip surface, the wafer upset forms with the floor and is connected, reduced package dimension, satisfied the high-performance (as high speed, high frequency, less pin) of electronic product, and packaging density is high, and makes product have good electric property and heat transfer property.Based on above-mentioned advantage, flip chip technology (fct) becomes most potential a kind of important technology that can adapt to the high-density electronic package requirement.Sum up, the main feature of FC technology is: chip directly is installed on substrate; Corresponding interconnect location must have solder joint-salient point; Yoke become mirror image symmetrical with the solder joint of chip; Realize simultaneously electric and mechanical connection.As seen, in the Flip-Chip Using process, salient point formation is the key in technical process.
Figure 1 shows that the structure of conventional flip chip salient point, its composition comprises: chip 1, passivation layer 2, aluminum pad 3, ubm layer UBM (Under-Bump Metallurgy) 4, salient point 5.Salient point 5 is namely the projected electrode that forms on chip aluminium electrode welding zone, makes the chip actual load on the base plate for packaging such as PCB by this electrode.For reaching the good adhesiveness of salient point metal 5 and aluminum pad 3 and passivation layer 2, prevent that again salient point metal 5 and aluminum pad 3 from generating undesirable intermetallic compound, generally should first be prepared with the multilevel metallization layer 4 of adhesion layer, diffusion impervious layer and conductive layer under the salient point metal.Typical adhesiving metal has Cr, Ti, Ni, TiN etc., and the diffusion impervious layer metal has W, Mo, Ni etc., and conducting metal is Au, Cu commonly used, Pb/Sn etc., and this various metals layer often adopts the methods such as sputter, evaporation, chemical plating, plating to complete.The making material of salient point metal 5 mostly is Au, Cu, Pb/Sn, In or their combination.The method that forms salient point 5 mainly contains galvanoplastic, electroless plating method, stud bump forming method, mould printing solder method and heat injection solder method etc.
In these salient points, the Pb/Sn solder bump enjoys attention because having outstanding advantages.Because it is hemisphere, but when flip chip bonding along with solder fusing autoregistration location, can control the degree of subsiding and the bump height of Pb/Sn scolder, so be called again controlled collapse chip connection technology (C4).Although solder has higher thermal conductivity and reliability, but the conduction of solder, heat conductivility are good not as simple metal, and can produce the existence in cavity due to factors such as brazing flux volatilizations in brazing process, thereby and can exist larger interface resistance by generation metal interface compound layer between solder and copper pad.For these reasons, solder alloy is not well positioned to meet the heat conduction needs of large-scale integrated high-density packages as thermal interfacial material.The more important thing is, when packaging density increases the size reduction of salient point, the alloy salient point can be eaten up by the pad metal, form thick intermetallic compounds layer, especially in the device course of work, also namely in the situation that energising and high temperature, intermetallic compound is constantly grown, might all become intermetallic compound by whole salient point, so not only increase interface resistance, reduce the capacity of heat transmission.And due to the factors such as generation in migration of elements, cavity, might cause the solder joint mechanical connection to lose efficacy, so solder alloy can not satisfy the demand of high density interconnect small size salient point.Conventional solder is take the SnPb alloy as main; continuous enhancing along with the industrial circle environmental protection meaning; the taboo Pb decrees such as the WEEE of European Union, ROHS are implemented in succession; China also begins to promulgate without the Pb decree; the encapsulation industry begins Pb-free solder is proposed higher requirement, but present Pb-free solder is not well positioned to meet the needs of high-density packages.
The polymer salient point is a kind of conducting polymer, is mainly to connect with epoxide resin conductive adhesive.Be characterized in that stud bump making technique is simple, connect temperature lower than 160 degrees centigrade, and can adopt cheap substrate, be a kind of efficiently, interconnected salient points cheaply.But any adhesive all can not directly be connected with the Al electrode, adopt the gold solder dish, and interface contact resistance is large, and theme is the organic substances such as epoxy resin, and its reliability does not have metal salient point desirable.Thereby and can cause the circuit parameter drift when having the unstable intensification of thermal resistance, the failure behaviour such as module cracking when easily the moisture absorption causes welding.
Summary of the invention
Based on the problems referred to above, problem to be solved by this invention is to provide a kind of nano-metal particle realizes LED the low-temperature metal preparation method that the interface connects.
A kind of nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, comprises the steps:
S1, with the nano-metal particle slurry preparation heat sink coating surface at metal heat sink;
S2, will be placed on metal heat sink through expanding the brilliant LED chip of processing, and the metal level of chip back is fully contacted with the nano metal slurry.
Under S3, oxygen-free atmosphere, step S2 is carried out low temperature reflux process, obtain LED chip and be connected with heat sink low thermal resistance metal interface;
Described nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, in step S1:
Described heat sink coating is silvering or gold plate;
In the nano-metal particle slurry, the particle diameter of metallic particles is tens nanometers～hundreds of nanometer;
Described nano-metal particle slurry be by point gum machine with nano-metal particle preparation heat sink coating surface or by mode of printing with the nano-metal particle preparation at heat sink coating surface;
Described nano-metal particle slurry is nano-Ag particles slurry, nanometer SnAgCu alloy pulp or nanometer Sn particle slurry.
Described nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, and in step S3, when low temperature reflux was processed, reflux temperature was 100～150 ℃, and the backflow temperature retention time is 2～60 seconds.
Described nano-metal particle is realized the preparation method that the low-temperature metal interface of LED connects, and in step S3, described solder technology is included in reflow soldering on existing die bond board or the reflow soldering in reflow ovens; The metal level at the LED chip back side is silver, Au-Sn or Sn.
The present invention adopts micro-nano metallic particles slurry as thermal interfacial material, can be complementary with existing sealed in unit and production line, that is to say directly to replace existing Sn parent metal, obtain metal salient point at lower temperature, can effectively reduce production costs, enhance productivity.The present invention obtains to spread by atom between metal salient point and ubm layer (UBM) and realizes that metal is connected, and the thick alloy-layer of formation between traditional solder bump and UBM layer, thereby can effectively reduce interface resistance and contact resistance, the ability that sheds of the heat when improving LED chip work.
The present invention obtains metal salient point at low temperatures, but experience the first low temperature reflux postwelding, it has been no longer micro-nano granules, thereby has higher fusion temperature, can bear follow-up high-temperature work environment, this kind technique can be avoided liquid heat boundary material or the existing shortcoming of solder effectively.
Description of drawings
Fig. 1 is the structure of conventional flip chip salient point
Fig. 2 is preparation technology's flow chart that nano-metal particle of the present invention is realized the low-temperature metal interface connection of LED.
Embodiment
A kind of nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, as shown in Figure 2, comprises the steps:
S1, with nano-metal particle slurry preparation on the heat sink coating of metal heat sink (namely ubm layer, Under-Bump Metallurgy, i.e. UBM) surface;
S2, will be placed on metal heat sink through expanding the brilliant LED chip of processing, and the metal level of chip back is fully contacted with the nano metal slurry.
Under S3, oxygen-free atmosphere, step S2 is carried out low temperature reflux process, obtain LED chip and be connected with heat sink low thermal resistance metal interface;
Described nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, in step S1:
Described heat sink coating is silvering or gold plate;
In the nano-metal particle slurry, the particle diameter of metallic particles is several nanometers～hundreds of nanometer;
Described nano-metal particle slurry be by point gum machine with nano-metal particle preparation heat sink coating surface or by mode of printing with the nano-metal particle preparation at heat sink coating surface; Wherein, the latter has higher production efficiency than the former, and cost also can hang down, but the former is applicable to the making of high density small size salient point; With the method for mould printing, adopt different templates, control the control bump size sizes such as squeegee pressure clearance height; Adopt the mode of some glue, with the salient point of the gain of parameter different sizes such as different Glue dripping heads, controlled pressure;
Described nano-metal particle slurry is nano-Ag particles slurry, nanometer SnAgCu alloy pulp or nanometer Sn particle slurry.
Described nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, and in step S2, when low temperature reflux was processed, reflux temperature was 100～150 ℃, and the backflow temperature retention time is 2～60 seconds; According to the difference of paste composition, in view of containing volatile aids in slurry, directly Reflow Soldering get final product, and salient point is not oxidized also can be chosen in (being oxygen-free atmosphere) low temperature reflux processing under hydrogen or inert atmosphere protection in order to protect; Because the fusing point of micro-nano metallic particles slurry is lower, after just can melting, be cooling, the lower nano-metal particle slurry of lower temperature (100～150 ℃) becomes metal salient point; According to the difference of paste composition, select the reflux temperature of suitable the best, in the time of the fusing of nano-metal particle slurry, realize being connected with heat sink coating fusion, salient point also has reasonable quality simultaneously.By insulation a period of time, nano-metal particle is fully melted, organic substance fully volatilizees, and reduces the defectives such as cavity of salient point inside.
Described nano-metal particle is realized the preparation method that the low-temperature metal interface of LED connects, and in step S3, described solder technology is included in reflow soldering on existing eutectic board or the reflow soldering in reflow ovens; The metal level at the LED chip back side is silver, Au-Sn or Sn.
Described nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, after finishing in step S3, also need carry out clean:
Described invention is according to the difference of micro-nano metal paste kind, the difference of the contained carriers such as auxiliary agent, if organic substance residues is arranged after reflow soldering, in order to reduce the reliability of these organic corrosivity and raising LED, can add cleaning, usually adopt industrial alcohol, acetone or deionized water to clean.
Weld completely, according to the component of nanometer silver paste, if organic residue is arranged, need the support after die bond is carried out plasma cleaning, oven dry is in order to next process at last.Experiment showed, that the jointing metal layer after sintering is fine and close, thermal conductivity is high can reach 200W/K.m, and its heat conductivility obviously is better than existing elargol, the silver slurry is connected with the scolder eutectic.The jointing metal interface also has higher shear strength, can satisfy the mechanical connection requirement of LED wafer, and the joint interface main component is Ag, substantially do not have the growth of intermetallic compound and the consumption problem of joint interface metal level in ageing process, the intermetallic compound growth that can well solve existing scolder linkage interface causes interface resistance to become greatly even linkage interface Problem of Failure.
The present invention adopts micro-nano metallic particles slurry as thermal interfacial material, can be complementary with existing sealed in unit and production line, that is to say directly to replace existing Sn parent metal, obtain metal salient point at lower temperature, can effectively reduce production costs, enhance productivity.The present invention obtains to spread by atom between metal salient point and ubm layer (UBM) and realizes that metal is connected, and the thick alloy-layer of formation between traditional solder bump and UBM layer, thereby can effectively reduce interface resistance and contact resistance, the ability that sheds of the heat when improving LED chip work.
The present invention obtains metal salient point at low temperatures, but experience the first low temperature reflux postwelding, it has been no longer micro-nano granules, thereby has higher fusion temperature, can bear follow-up high-temperature work environment, this kind technique can be avoided liquid heat boundary material or the existing shortcoming of solder effectively.
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Embodiment 1
A kind of nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, comprises the steps:
S1, the silver-colored particle slurry that is tens nanometer with particle diameter prepare at heat sink coating surface;
S2, the silver layer through expanding the brilliant LED chip back side of processing is placed on nano metal pulp layer on heat sink, and the metal level at the LED chip back side is fully contacted with the coating of heat sink surface;
Under S3, hydrogen atmosphere, under 100 ℃, step S1 is carried out silver-colored particle slurry carry out low temperature reflux and processed 30 seconds, obtain silver-colored salient point.
Embodiment 2
A kind of nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, comprises the steps:
S1, be that tens nanometer SnAgCu alloy pulp preparation is on metal substrate electrode layer surface with particle diameter;
Under S2, nitrogen atmosphere, under 180 ℃, step S1 is carried out the SnAgCu alloy pulp carry out low temperature reflux and processed 1 minute, obtain SnAgCu alloy salient point;
S3, the Au-Sn alloy-layer through expanding the brilliant LED chip back side of processing is placed on SnAgCu alloy salient point, and by the ultra-sonic welded technology, make Au-Sn alloy-layer and the SnAgCu alloy salient point at the LED chip back side integrally welded, nanometer SnAgCu alloying pellet realizes that the low-temperature metal interface of LED connects.
Embodiment 3
A kind of nano-metal particle is realized the preparation method of the low-temperature metal interface connection of LED, comprises the steps:
S1, be that tens nanometer Sn slurry preparation is on ceramic electrode layer surface with particle diameter;
Under S2, nitrogen atmosphere, under 200 ℃, step S1 is carried out the Sn slurry carry out low temperature reflux and processed 10 minutes, obtain the Sn salient point;
S3, the Sn layer through expanding the brilliant LED chip back side of processing is placed on the Sn salient point, and by the ultra-sonic welded technology, makes Sn alloy-layer and the Sn salient point at the LED chip back side integrally welded, nanometer Sn particle is realized the low-temperature metal interface connection of LED.
Should be understood that, above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.
Claims (9)
1. a nano-metal particle is realized the preparation method that the low-temperature metal interface of LED connects, and it is characterized in that, comprises the steps:
S1, with the nano-metal particle slurry preparation heat sink coating surface at metal heat sink;
S2, will be placed on metal heat sink through expanding the brilliant LED chip of processing, and the metal level of chip back is fully contacted with the nano metal slurry.
Under S3, oxygen-free atmosphere, step S2 is carried out low temperature reflux process, obtain LED chip and be connected with heat sink low thermal resistance metal interface;
2. nano-metal particle according to claim 1 is realized the preparation method of the low-temperature metal interface connection of LED, it is characterized in that, in step S1, described heat sink coating is Ag coating, Au coating etc.
3. nano-metal particle according to claim 1 is realized the preparation method of the low-temperature metal interface connection of LED, it is characterized in that, in step S1, in the nano-metal particle slurry, the particle diameter of metallic particles is several nanometers～hundreds of nanometer.
4. nano-metal particle according to claim 1 is realized the preparation method of the low-temperature metal interface connection of LED, it is characterized in that, in step S1, described nano-metal particle slurry prepares nano-metal particle at heat sink coating surface by point gum machine.
5. nano-metal particle according to claim 1 is realized the preparation method of the low-temperature metal interface connection of LED, it is characterized in that, in step S1, described nano-metal particle slurry prepares nano-metal particle at heat sink coating surface by mode of printing.
6. arbitrary described nano-metal particle is realized the preparation method that the low-temperature metal interface of LED connects according to claim 1 to 5, it is characterized in that, in step S1, described nano-metal particle slurry is nano-Ag particles slurry, nanometer SnAgCu alloy pulp or nanometer Sn particle slurry.
7. nano-metal particle according to claim 1 is realized the preparation method of the low-temperature metal interface connection of LED, it is characterized in that, in step S2, when low temperature reflux was processed, reflux temperature was 100～150 ℃, and the backflow temperature retention time is 5～60 seconds.
8. nano-metal particle according to claim 1 is realized the preparation method that the low-temperature metal interface of LED connects, and it is characterized in that, in step S3, described solder technology is included in reflow soldering or the reflow soldering in the backflow road on existing eutectic board.
9. nano-metal particle according to claim 1 is realized the preparation method that the low-temperature metal interface of LED connects, and it is characterized in that, in step S3, the metal level at the LED chip back side be silver-colored, Au-Sn or Sn.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104599976A (en) * | 2014-12-24 | 2015-05-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Lead-free solder alloy and preparation method and application thereof |
| CN107538010A (en) * | 2017-07-17 | 2018-01-05 | 哈尔滨工业大学深圳研究生院 | A kind of method for reducing nano-metal particle sintering temperature |
| CN109576766A (en) * | 2018-12-27 | 2019-04-05 | 大连理工大学 | A kind of electrophoresis-electrodeposited nanocrystalline TiO2Enhance the method for Sn base micro convex point |
| CN111430522A (en) * | 2020-05-09 | 2020-07-17 | 东莞市中晶半导体科技有限公司 | L ED chip, L ED display screen module and manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1337295A (en) * | 2001-08-11 | 2002-02-27 | 无锡威孚吉大新材料应用开发有限公司 | Nano metal solder and its prepn |
| CN101208799A (en) * | 2005-06-30 | 2008-06-25 | 英特尔公司 | Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages |
| CN101592327A (en) * | 2009-07-07 | 2009-12-02 | 天津大学 | A kind of power type LED lamp and packaging technology thereof and reflow soldering process equipment |
| US20110101497A1 (en) * | 2009-10-30 | 2011-05-05 | Murata Manufacturing Co., Ltd. | Method for fabricating a flip-bonded dual-substrate inductor, flip-bonded dual-substrate inductor, and integrated passive device including a flip-bonded dual-substrate inductor |
-
2011
- 2011-12-06 CN CN201110403731.7A patent/CN103151430B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1337295A (en) * | 2001-08-11 | 2002-02-27 | 无锡威孚吉大新材料应用开发有限公司 | Nano metal solder and its prepn |
| CN101208799A (en) * | 2005-06-30 | 2008-06-25 | 英特尔公司 | Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages |
| CN101592327A (en) * | 2009-07-07 | 2009-12-02 | 天津大学 | A kind of power type LED lamp and packaging technology thereof and reflow soldering process equipment |
| US20110101497A1 (en) * | 2009-10-30 | 2011-05-05 | Murata Manufacturing Co., Ltd. | Method for fabricating a flip-bonded dual-substrate inductor, flip-bonded dual-substrate inductor, and integrated passive device including a flip-bonded dual-substrate inductor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104599976A (en) * | 2014-12-24 | 2015-05-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Lead-free solder alloy and preparation method and application thereof |
| CN104599976B (en) * | 2014-12-24 | 2018-01-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Leadless welding alloy and its preparation method and application |
| CN107538010A (en) * | 2017-07-17 | 2018-01-05 | 哈尔滨工业大学深圳研究生院 | A kind of method for reducing nano-metal particle sintering temperature |
| CN107538010B (en) * | 2017-07-17 | 2021-06-04 | 哈尔滨工业大学深圳研究生院 | Method for reducing sintering temperature of nano metal particles |
| CN109576766A (en) * | 2018-12-27 | 2019-04-05 | 大连理工大学 | A kind of electrophoresis-electrodeposited nanocrystalline TiO2Enhance the method for Sn base micro convex point |
| CN111430522A (en) * | 2020-05-09 | 2020-07-17 | 东莞市中晶半导体科技有限公司 | L ED chip, L ED display screen module and manufacturing method |
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