CN106206339B - The ultrasonic back bonding method and device thereof of copper copper directly heat between a kind of micro- copper post - Google Patents
The ultrasonic back bonding method and device thereof of copper copper directly heat between a kind of micro- copper post Download PDFInfo
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- CN106206339B CN106206339B CN201610546341.8A CN201610546341A CN106206339B CN 106206339 B CN106206339 B CN 106206339B CN 201610546341 A CN201610546341 A CN 201610546341A CN 106206339 B CN106206339 B CN 106206339B
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
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- H01L2224/08501—Material at the bonding interface
- H01L2224/08502—Material at the bonding interface comprising an eutectic alloy
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16153—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/16175—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/165—Material
- H01L2224/16501—Material at the bonding interface
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Abstract
The invention discloses a kind of ultrasonic back bonding method and device thereof of the directly heat of copper copper between micro- copper post, micro- copper post between upper chip and lower chip are aligned, temperature 60 C~220 DEG C needed for upper chip and lower chip are heated to back bonding；Upper chip is pressed on lower chip, when the pressure being applied on chip reaches expected pressure 10MPa~30MPa, ultrasonic-frequency power supply is opened and exports high-power 1W~6W, and duration 10ms~200ms；Pressure is increased into 20MPa~80MPa again later, ultrasonic output power is reduced to 1W~3W, and retention time 100ms~2000ms, completes the ultrasonic back bonding of copper copper directly heat between the micro- copper post of chip up and down.The present invention be the intensity and reliability after a kind of formation and bonding that can guarantee bonded interface micro-structure micro- copper post between the ultrasonic back bonding method and device thereof of copper copper directly heat.
Description
Technical field
The present invention relates to a kind of methods of the direct back bonding of copper copper between micro- copper post, more particularly to copper between a kind of micro- copper post
The ultrasonic back bonding method of copper directly heat.The invention further relates to realize the ultrasonic upside-down mounting key of copper copper directly heat between micro- copper post in life
The device of conjunction method.
Background technique
Integrated circuit (IC) industry is the core of modern high technology and information industry, and finance, national defence, Aeronautics and Astronautics,
The basis of the every profession and trades such as Internet.Complete integrated circuit is by bare chip (wafer) and packaging body (package substrate, sealing material
Material, interconnecting line/soldered ball etc.) it is composed.The important link as IC manufacturing is encapsulated, provides signal and electricity for chip
Source interconnection, mechanical support and heat dissipation channel and environmental protection etc..As transistor integration density increases rapidly with Moore's Law
Adding, the calculating speed and signaling rate of IC chip also quickly improve, and the effect of encapsulation technology in ic manufacturing becomes increasingly conspicuous,
The specific gravity of packaging cost in ic manufacturing is also increasing.In common IC product, packaging cost is about 5~10%, in high frequency
In High Speed ICs product, packaging cost reaches 30~50%, some are even more than 60%.Encapsulation has become the weight of IC industry
It forms.
In recent years, due to the fast development of mobile computing, " lighter, thinner, smaller, more multi-functional " is proposed to IC product
New demand so that IC package develops to three-dimension packaging direction rapidly.Three-dimension packaging is in the height direction by stacking, interconnecting
The devices such as various logic, storage, simulation realize the heterogeneous integrated method of a variety of devices, compared with conventional two-dimensional encapsulation, three-dimensional envelope
Harness has the advantages that size small light-weight, silicon wafer service efficiency height, shortening signal delay.
To realize the integrated of more circuits in unit area, new generation of high density three-dimension packaging require interconnection point spacing and
Diameter all further reduces.It is predicted according to ITRS, dimpling spot diameter will narrow down to 1~10 μm, every square millimeter of dimpling points
Amount increases by 100 times or more.Sharply reducing for interconnection spot size and sharply increasing for quantity, give existing Advanced Packaging flipchip bump
Manufacture brings new challenge with flip-chip interconnection techniques.
To realize that above-mentioned target, industry propose the side for replacing solder ball using micro- copper post (micro-copper pillar)
Method.It by being lithographically formed dimpling dot pattern first in chip/substrate pads, then is passed through using preceding road/middle road method
Electric plating method prepares the micro- copper post array of high density in photoengraving pattern.Due to using accurate photoetching, electroplating technology,
Thus, it is possible to obtain diameter is 1 μm, height error is less than the micro- copper post array of high density of 50nm.Chip may be implemented in micro- copper post
High density I/O flip-chip interconnection between substrate, chip and chip.
Currently, having a layer thickness at the top of micro- copper post is a few micrometers of Sn, Sn cap is formed.It on the one hand is protection copper post surface
It is not oxidized；On the other hand be because of existing reflux upside-down mounting or hot pressing flip-chip interconnection techniques, can not copper post is straight with copper post
It connects and is bonded together, it is necessary to increase transition metal, " sandwich " interconnection structure of Cu-Sn-Cu could be formed.But Sn cap
Introduce bring problems: 1. when flowing back flip-chip interconnection, during high-temperature heating (more than 250 DEG C) melt Sn,
Since the content of Sn is limited, what is often eventually formed is substantially brittle intermetallic compound (IMC) Cu3Sn, rather than pass
The Cu formed is expected in system reflux6Sn5, thus greatly reduce the reliability of interconnection.2. in hot pressing upside-down mounting, although can drop
Low bonding temperature reduces intermetallic compound (IMC) Cu to 230 DEG C or less, shortening time3The content of Sn, but bring
Interconnection interface Sn squeeze-out phenomenon under pressure, Sn, which squeezes to overflow, to be led to be bonded short-circuit risks and greatly improves, especially highly dense
It spends, in the three-dimensionally integrated encapsulation of thin space；Meanwhile excessive pressure is also easy that 100 μm of even 50 μm of chip pressures will be thinned to
It is broken.
It is crisp to avoid above-mentioned interface I MC therefore, it is necessary to develop Cu-Cu Direct Bonding new method new, without Sn cap
The problems such as change, Sn squeeze out, silicon wafer cracks.
Hot ultrasound upside-down mounting is a kind of scheme to solve the above problems.Hot ultrasound upside-down mounting is drawn on the basis of thermocompression bonding
Enter ultrasound, in a kind of method for reducing bonding pressure, bonding temperature, shortening bonding time, improving bond strength.Due to its uniqueness
Technical advantage, heat ultrasound back bonding SAW element, chip for cell phone, the high power in disk read-write head, the communications field
LED etc. have very high performance require microelectronics/optoelectronic device packaging in use, realize Au-Au, Au-Ag, Cu-Ag,
The direct back bonding of solid-state between the various metals such as Cu-Sn.But there are no the researchs in micro- copper post Cu-Cu Direct Bonding
Report.
It realizes the ultrasonic back bonding of Cu-Cu directly heat in density three-dimensional integration packaging between micro- copper post, will at least face
The problem of the following aspects:
1) traditional thermosonic back bonding material therefor is mostly Au SnAg alloy bump, not oxidizable, bump surface
Oxidation stain layer be only tens nanometers, para-linkage interface atoms diffusion, intensity forming process influence it is limited；But three-dimensional collection
It is generally electro-coppering at copper post micro- in encapsulation, is easily aoxidized, thickness is up to a few micrometers, and micro- copper post diameter is only 5~10 microns,
Micro- copper post cross section only has several crystal grain, and accounting of the oxide layer in micro- copper post is more than 20%, and it is micro- to will seriously affect bonded interface
The formation of structure and intensity and reliability after bonding.
2) salient point of traditional thermosonic back bonding is generally ailhead gold/copper bump (Stud bump) or spherical scolding tin is convex
Point (Solder bump), diameter are more than 50 microns, and diameter is generally higher than height；A few micrometers of amplitude of high frequency ultrasound is vibrated convex
Propagation in point will not bring the fatigue rupture of macroscopic view to salient point；But be only 5~10 microns for diameter, be highly greater than it is straight
The micro- copper post of the vertical-growth of diameter, it is up to hundreds of that generated stress concentration is propagated in a few micrometers of amplitude of ultrasonic vibration in salient point
MPa, it is easy to the destruction of salient point root and interconnected position will be caused.The salient point of traditional thermosonic back bonding is generally ailhead
Gold/copper bump (Stud bump) or spherical scolding tin salient point (Solder bump), diameter is more than 50 microns, and diameter is generally higher than height
Degree；The propagation that a few micrometers of amplitude of high frequency ultrasound vibrates in salient point will not bring the fatigue rupture of macroscopic view to salient point；But it is right
It is only 5~10 microns, is highly greater than the micro- copper post of vertical-growth of diameter in diameter, a few micrometers of amplitude of ultrasonic vibration is in salient point
Stress caused by propagating, which is concentrated, may be up to hundreds of MPa, it is easy to will cause the destruction of salient point root and interconnected position.
Summary of the invention
First technical problem to be solved by this invention be to provide a kind of formation that can guarantee bonded interface micro-structure with
And the ultrasonic back bonding method of copper copper directly heat between micro- copper post of the intensity and reliability after bonding.
Second technical problem to be solved by this invention is to provide a kind of atom expansion that can either be provided between micro- copper post
Required energy is dissipated, and the directly hot ultrasound of copper copper is fallen between can be avoided the micro- copper post of realization of the delamination between salient point root and pad
Fill the device of bonding method.
In order to solve above-mentioned first technical problem, the ultrasonic back bonding of copper copper directly heat between micro- copper post provided by the invention
Micro- copper post between upper chip and lower chip is aligned, temperature needed for upper chip and lower chip are heated to back bonding by method
60 DEG C~220 DEG C of degree；Upper chip is pressed on lower chip, when the pressure being applied on chip reach expected pressure 10MPa~
When 30MPa, opens ultrasonic-frequency power supply and export high-power 1W~6W, and duration 10ms~200ms；Pressure is increased again later
To 20MPa~80MPa, ultrasonic output power is reduced to 1W~3W, and retention time 100ms~2000ms, completes core up and down
The ultrasonic back bonding of copper copper directly heat between the micro- copper post of piece.
160 DEG C of temperature needed for upper chip and lower chip are heated to back bonding.
Upper chip is pressed on lower chip, when the pressure being applied on chip reaches expected pressure 20MPa, unlatching ultrasound
Power supply simultaneously exports high-power 3W, and continues for some time preferred 100ms；Pressure is increased into 60MPa, ultrasonic output work again later
Rate is reduced to 1.5W, and retention time 400ms.
In order to solve above-mentioned second technical problem, copper copper directly heat ultrasonic upside-down mounting provided by the invention between realizing micro- copper post
The device of bonding method, base platform is equipped with heating and sports platform and up and down motion platform, in the heating and sports platform
Equipped with lower chip vacuum absorption fixation device；The up and down motion platform is equipped with ultrasonic transducer, the ultrasonic transduction
Device is connected with ultrasonic-frequency power supply, and the up and down motion platform is equipped with force snesor, and the ultrasonic transducer is equipped with chopper
With upper chip vacuum adsorbent equipment, a upper chip identification camera is directed at the upper core being adsorbed on chip vacuum adsorbent equipment
Piece, a lower chip identification camera are directed at the lower chip being adsorbed on lower chip vacuum absorption fixation device, the heating
It is imaged with sports platform, up and down motion platform, lower chip identification camera, lower chip vacuum absorption fixation device, the identification of upper chip
The control terminal of head, ultrasonic-frequency power supply and force snesor is communicated to connect with control computer.
The upper chip identification camera is that upper chip identifies CCD camera.
The lower chip identification camera is that lower chip identifies CCD camera.
The ultrasonic back bonding method and device thereof of copper copper directly heat between micro- copper post by adopting the above technical scheme, by upper chip
Micro- copper post alignment between lower chip, temperature 60 C~220 DEG C needed for upper chip and lower chip are heated to back bonding；
Upper chip is pressed on lower chip, when the pressure being applied on chip reaches expected pressure 10MPa~30MPa, is opened super
Acoustic-electric source simultaneously exports high-power 1W~6W, and duration 10ms~200ms；Later again by pressure increase to 20MPa~
80MPa, ultrasonic output power are reduced to 1W~3W, and retention time 100ms~2000ms, complete up and down chip micro- copper post it
Between the copper copper directly ultrasonic back bonding of heat.After completing above-mentioned bonding, ultrasound output is closed；Chip vacuum in closing, core in release
Piece；Lower chip vacuum is closed, lower chip is discharged；Then it takes the chipset up and down for completing bonding away, completes between one group of chip
Bonding；Above step is repeated, the ultrasonic back bonding of copper copper directly heat between the next group of micro- copper post of chip is carried out.
The beneficial effects of the present invention are:
1), in bonding initial stage (within 0-100ms), small pressure/high-power (to have 12000 having a size of 10*10mm is used
For a micro- copper post inter-chip interconnection, the technological parameter of<20MPa,>3W can be used), solve the oxide layer on micro- copper post surface
Removal problem；Phase (after 100) after bonding use big pressure/small-power (to have 12000 micro- copper having a size of 10*10mm
For column inter-chip interconnection, can use>20MPa,<3W technological parameter).Atom diffusion between micro- copper post can either be provided
Required energy, and can be avoided the delamination between salient point root and pad.
2) it realizes that the copper copper Direct Bonding between micro- copper post interconnects using hot ultrasonic back bonding new method, avoids tradition
The problems such as Sn cap structure and its bonding interconnection bring interface I MC embrittlement, Sn extrusion, silicon wafer cracking.
In conclusion the present invention is a kind of intensity after the formation and bonding that can guarantee bonded interface micro-structure and reliable
Property micro- copper post between copper copper directly ultrasonic upside-down mounting (Thermosonic Flip chip) bonding method of heat.Its device can either mention
For energy needed for the atom diffusion between micro- copper post, and it can be avoided the delamination between salient point root and pad.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the device of the invention.
In figure: 1- controls computer；2- ultrasonic transducer；3- force snesor；4- ultrasonic-frequency power supply；The upper chip vacuum absorption of 5-
Device；The upper chip of 6- identifies CCD camera；7- chopper；The upper chip of 8-；Chip under 9-；The fixed dress of chip vacuum absorption under 10-
It sets；11- heating and sports platform；Chip identifies CCD camera under 12-；13- base platform；14- up and down motion platform.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings.
Referring to Fig. 1, realize that the device of the ultrasonic back bonding method of copper copper directly heat between micro- copper post, base platform 13 are equipped with
Heating and sports platform 11 and up and down motion platform 14, heating are equipped with lower chip vacuum absorption fixation device 10 with sports platform 11；
Up and down motion platform 14 is equipped with ultrasonic transducer 2, and ultrasonic transducer 2 is connected with ultrasonic-frequency power supply 4, sets on up and down motion platform 14
Force sensor 3, ultrasonic transducer 2 are equipped with chopper 7 and upper chip vacuum adsorbent equipment 5, a upper chip identification CCD camera shooting
The upper chip 8 that first 6 alignment is adsorbed on chip vacuum adsorbent equipment 5, a lower chip identification CCD camera 12 alignment absorption
Lower chip 9 on lower chip vacuum absorption fixation device 10, heating are known with sports platform 11, up and down motion platform 14, lower chip
Other CCD camera 12, lower chip vacuum absorption fixation device 10, upper chip identification CCD camera 6, ultrasonic-frequency power supply 4 and power sensing
The control terminal of device 3 is communicated to connect with control computer 1.
Referring to Fig. 1, the specific implementation method of the copper copper directly device of heat ultrasound back bonding method between micro- copper post is realized are as follows:
1. firstly, upper chip 8 is overturn (micro- copper post is downward), and be transmitted to chopper 7 in the following, simultaneously using brilliant manipulator is turned over
By chip 8 in upper 5 vacuum suction of chip vacuum adsorbent equipment, it is fixed below chopper 7；
2. lower chip 9 is transmitted to above heating and sports platform 11 using turning over brilliant manipulator, micro- copper post upward, lower chip 9
It is fixed in heating and sports platform 11 by lower 10 vacuum suction of chip vacuum absorption fixation device；
3. identifying that CCD camera 6 and lower chip vacuum absorption fixation device 10 obtain 8 He of chip respectively by upper chip
The image of lower chip 9, after control computer 1 identifies, position and differential seat angle in determination between chip 8 and lower chip 9, and lead to
It crosses heating and the rotation of sports platform 11 and the above alignment between chip 8 and lower chip 9 is realized in translation.
4. temperature 60 C~220 DEG C, preferably 160 DEG C needed for heating is heated to back bonding with sports platform 11；
5. control computer 1 controls up and down motion platform 14 and moves down, chopper 7 and upper chip 8 is driven to move downward, and
Upper chip 8 is pressed on lower chip 9；Control computer 1 monitors the output of force snesor 3 in this process, when being applied to core
When the pressure of on piece reaches expected pressure 10MPa~30MPa, preferably 20MPa, ultrasonic-frequency power supply 4 and ultrasonic transducer 2 are opened simultaneously
High-power 1W~6W, preferably 3W are exported, and continues for some time 10ms~200ms, preferably 100ms；Pressure is increased again later
Ultrasonic output power to 20MPa~80MPa, preferably 60MPa, ultrasonic transducer 2 is reduced to 1W~3W, preferably 1.5W, and protects
Hold a period of time 100ms~2000ms, preferably 400ms.So far, copper copper between chip 8 and micro- copper post of lower chip 9 is completed
The directly ultrasonic back bonding of heat.
6. after completing above-mentioned bonding, closing the ultrasound output of ultrasonic transducer 2；Chip vacuum adsorbent equipment 5 in closing
Vacuum, chip 8 in release；The vacuum for closing lower chip vacuum absorption fixation device 10 discharges lower chip 9；Then completion is taken away
The chipset up and down of bonding completes the bonding between one group of chip；
7. repeating above step 1-6, the ultrasonic back bonding of copper copper directly heat between the next group of micro- copper post of chip is carried out.
Claims (5)
1. a kind of ultrasonic back bonding method of copper copper directly heat between micro- copper post, it is characterized in that: by between upper chip and lower chip
Micro- copper post alignment, temperature 60 C~220 DEG C needed for upper chip and lower chip are heated to back bonding；Upper chip is pressed in down
On chip, when the pressure being applied on chip reaches expected pressure 20MPa, opens ultrasonic-frequency power supply and exports high-power 3W,
And duration 100ms；Pressure is increased into 60MPa again later, ultrasonic output power is reduced to 1.5W, and retention time
400ms completes the ultrasonic back bonding of copper copper directly heat between the micro- copper post of chip up and down.
2. the ultrasonic back bonding method of copper copper directly heat between micro- copper post according to claim 1, it is characterized in that: by upper chip
160 DEG C of temperature needed for being heated to back bonding with lower chip.
3. the device of the ultrasonic back bonding method of copper copper directly heat between micro- copper post described in claim 1 is realized, it is characterized in that: bottom
Seat platform (13) is equipped with heating and sports platform (11) and up and down motion platform (14), sets on the heating and sports platform (11)
There is lower chip vacuum absorption fixation device (10)；The up and down motion platform (14) is equipped with ultrasonic transducer (2), described
Ultrasonic transducer (2) is connected with ultrasonic electric (4), and the up and down motion platform (14) is equipped with force snesor (3), and described is super
Sonic transducer (2) is equipped with chopper (7) and upper chip vacuum adsorbent equipment (5), a upper chip identification camera alignment absorption
Upper chip on upper chip vacuum adsorbent equipment (5), a lower chip identification camera alignment are adsorbed on lower chip vacuum and inhale
Lower chip on attached fixed device (10), the heating are taken the photograph with sports platform (11), up and down motion platform (14), the identification of lower chip
As the control of head, lower chip vacuum absorption fixation device (10), upper chip identification camera, ultrasonic-frequency power supply (4) and force snesor (3)
End processed is communicated to connect with control computer (1).
4. the device of the ultrasonic back bonding method of copper copper directly heat, feature between the micro- copper post of realization according to claim 3
Be: the upper chip identification camera is that upper chip identifies CCD camera (6).
5. the device of the ultrasonic back bonding method of copper copper directly heat, special between the micro- copper post of realization according to claim 3 or 4
Sign is: the lower chip identification camera is that lower chip identifies CCD camera (12).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610546341.8A CN106206339B (en) | 2016-07-12 | 2016-07-12 | The ultrasonic back bonding method and device thereof of copper copper directly heat between a kind of micro- copper post |
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| CN201610546341.8A CN106206339B (en) | 2016-07-12 | 2016-07-12 | The ultrasonic back bonding method and device thereof of copper copper directly heat between a kind of micro- copper post |
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| CN106206339A CN106206339A (en) | 2016-12-07 |
| CN106206339B true CN106206339B (en) | 2018-12-21 |
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