CN106206339A - A kind of micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper and device thereof - Google Patents
A kind of micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper and device thereof Download PDFInfo
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- CN106206339A CN106206339A CN201610546341.8A CN201610546341A CN106206339A CN 106206339 A CN106206339 A CN 106206339A CN 201610546341 A CN201610546341 A CN 201610546341A CN 106206339 A CN106206339 A CN 106206339A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
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- H01L2224/08501—Material at the bonding interface
- H01L2224/08502—Material at the bonding interface comprising an eutectic alloy
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16153—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/16175—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/165—Material
- H01L2224/16501—Material at the bonding interface
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Abstract
The invention discloses a kind of micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper and device thereof, the micro-copper post between upper chip and lower chip is directed at, upper chip and lower chip are heated to the temperature 60 C needed for back bonding～220 DEG C；Upper chip is pressed on lower chip, when the pressure being applied on chip reaches intended pressure 10MPa～30MPa, opens ultrasonic-frequency power supply and export high-power 1W～6W, and persistent period 10ms～200ms；Pressure increases to 20MPa～80MPa the most again, and ultrasonic output is reduced to 1W～3W, and retention time 100ms～2000ms, completes the hottest ultrasonic back bonding of copper copper between upper and lower chip micro-copper post.The present invention is the intensity after a kind of formation that can guarantee that bonded interface micro structure and bonding and micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper of reliability and device thereof.
Description
Technical field
A kind of method that the present invention relates to micro-copper intercolumniation direct back bonding of copper copper, particularly relates to a kind of micro-copper intercolumniation copper
The hottest ultrasonic back bonding method of copper.The invention still further relates to realize this micro-the hottest ultrasonic upside-down mounting key of copper intercolumniation copper copper in life
The device of conjunction method.
Background technology
Integrated circuit (IC) industry is the core of modern high technology and information industry, be also finance, national defence, Aeronautics and Astronautics,
The basis of the every profession and trades such as Internet.Complete integrated circuit is by bare chip (wafer) and packaging body (base plate for packaging, sealing material
Material, interconnecting line/soldered ball etc.) combine.Encapsulate the important step as IC manufacturing, provide signal and electricity for chip
Source interconnection, mechanical support and heat dissipation channel, and environmental protection etc..Along with transistor integration density increases rapidly with Moore's Law
Adding, the calculating speed of IC chip and signaling rate the most quickly improve, and encapsulation technology effect in ic manufacturing becomes increasingly conspicuous,
Packaging cost proportion in ic manufacturing is the most increasing.In common IC product, packaging cost is about 5～10%, at high frequency
In High Speed ICs product, packaging cost reaches 30～50%, and some is even more than 60%.Encapsulation has become the weight of IC industry
Form.
In recent years, due to the fast development of mobile computing, IC product is proposed " gentlier, thinner, less, more multi-functional "
New demand so that IC encapsulation develop to three-dimension packaging direction rapidly.Three-dimension packaging is in the height direction by stacking, interconnection
Various logic, store, the device such as simulation, it is achieved the heterogeneous integrated method of multiple device, compared with conventional two-dimensional encapsulation, three-dimensional envelope
Harness has the advantages such as size little lightweight, silicon chip service efficiency high, shortening signal delay.
For realizing the integrated of more circuits in unit are, new generation of high density three-dimension packaging require interconnection point spacing and
Diameter reduces the most further.Predicting according to ITRS, micro convex point diameter will narrow down to 1～10 μm, and the dimpling of every square millimeter is counted
Amount increases by more than 100 times.Drastically reducing of interconnection point size and sharply increasing of quantity, to existing Advanced Packaging flipchip bump
Manufacture and bring new challenge with flip-chip interconnection techniques.
For realizing above-mentioned target, industry proposes the side using micro-copper post (micro-copper pillar) to replace solder ball
Method.It is the method using front road/middle road, first by being lithographically formed micro convex point pattern in chip/substrate pads, then passes through
Electric plating method, prepares high density micro-copper post array in photoengraving pattern.Owing to have employed the photoetching of precision, electroplating technology,
Thus, it is possible to obtain high density micro-copper post array that a diameter of 1 μm, height error are less than 50nm.Micro-copper post can realize chip
And the high density I/O flip-chip interconnection between substrate, chip and chip.
At present, the Sn that micro-copper column top has a layer thickness to be a few micrometers, form Sn cap.On the one hand it is protection copper post surface
Not oxidized；On the other hand it is because existing backflow upside-down mounting or hot pressing flip-chip interconnection techniques, it is impossible to straight with copper post for copper post
Connect and be bonded together, it is necessary to increase transition metal, " sandwich " interconnection structure of Cu-Sn-Cu could be formed.But, Sn cap
Introduce the problems brought: 1. when refluxing flip-chip interconnection, during high-temperature heating (more than 250 DEG C) melts Sn,
Owing to the content of Sn is limited, intermetallic compound (IMC) Cu being substantially fragility often eventually formed3Sn rather than biography
The Cu formed is expected in system backflow6Sn5, thus greatly reduce the reliability of interconnection.2. when hot pressing upside-down mounting, although can drop
Low bonding temperature to less than 230 DEG C, shortening time, and reduce intermetallic compound (IMC) Cu3The content of Sn, but but bring
Interconnection interface Sn squeeze-out phenomenon under pressure, Sn extruding spilling causes being bonded short-circuit risks and is greatly improved, particularly highly dense
Degree, thin space three-dimensionally integrated encapsulation in；Meanwhile, excessive pressure also easily will be thinned to the chip pressure of 100 μm even 50 μm
Broken.
Accordingly, it would be desirable to develop new, not have Sn cap Cu-Cu Direct Bonding new method, to avoid above-mentioned interface I MC crisp
Change, Sn extrudes, silicon chip problems of crack.
The ultrasonic upside-down mounting of heat is a kind of scheme solving the problems referred to above.The ultrasonic upside-down mounting of heat is on the basis of thermocompression bonding, draws
Enter ultrasonic, to reduce bonding pressure, bonding temperature, shortening bonding time, a kind of method of raising bond strength.Owing to it is unique
Technical advantage, hot ultrasonic back bonding the SAW element in disk read-write head, the communications field, chip for cell phone, high power
LED etc. have in the microelectronics/optoelectronic device packaging of very high performance requirement use, it is achieved that Au-Au, Au-Ag, Cu-Ag,
The direct back bonding of solid-state between the various metals such as Cu-Sn.But, also not in the research of micro-copper post Cu-Cu Direct Bonding
Report.
Realize the hottest ultrasonic back bonding of the Cu-Cu of micro-copper intercolumniation in density three-dimensional integration packaging, face to major general
The problem of the following aspects:
1) traditional thermosonic back bonding material therefor mostly is Au, or SnAg alloy bump, the most oxidizable, bump surface
Oxidation stain layer be only tens nanometers, the diffusion of para-linkage interface atoms, the impact of intensity forming process are limited；But, three-dimensional collection
Becoming micro-copper post in encapsulation to be generally electro-coppering, easily aoxidize, thickness is up to a few micrometers, and micro-copper column diameter is only 5～10 microns,
Micro-copper post cross section only has several crystal grain, and oxide layer accounting in micro-copper post, more than 20%, will have a strong impact on bonded interface micro-
Intensity after the formation of structure and bonding and reliability.
2) salient point of traditional thermosonic back bonding is generally ailhead gold/copper bump (Stud bump) or spherical scolding tin is convex
Point (Solder bump), diameter is more than 50 microns, and diameter is the most highly；The high frequency ultrasound of amplitude a few micrometers is vibrated convex
Propagation in point will not bring the fatigue rupture of macroscopic view to salient point；But, 5～10 microns are only for diameter, highly more than straight
Vertical-growth micro-copper post in footpath, the supersonic vibration of amplitude a few micrometers is propagated produced stress concentration in salient point and be may be up to hundreds of
MPa, it is easy to the destruction of salient point root and interconnected position will be caused.The salient point of traditional thermosonic back bonding is generally ailhead
Gold/copper bump (Stud bump) or spherical scolding tin salient point (Solder bump), diameter is more than 50 microns, and diameter is the highest
Degree；The high frequency ultrasound vibration of amplitude a few micrometers propagation in salient point will not bring the fatigue rupture of macroscopic view to salient point；But, right
Being only 5～10 microns in diameter, be highly more than vertical-growth micro-copper post of diameter, the supersonic vibration of amplitude a few micrometers is in salient point
Propagate produced stress concentration and may be up to hundreds of MPa, it is easy to the destruction of salient point root and interconnected position will be caused.
Summary of the invention
First technical problem to be solved by this invention be to provide a kind of formation that can guarantee that bonded interface micro structure with
And bonding after intensity and micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper of reliability.
Second technical problem to be solved by this invention is to provide a kind of atom that can either provide between micro-copper post and expands
Dissipate required energy, again it can be avoided that delamination between salient point root and pad realize micro-copper intercolumniation copper copper the hottest ultrasonic fall
The device of dress bonding method.
In order to solve above-mentioned first technical problem, micro-copper the hottest ultrasonic back bonding of intercolumniation copper copper that the present invention provides
Method, is directed at the micro-copper post between upper chip and lower chip, upper chip and lower chip is heated to the temperature needed for back bonding
Spend 60 DEG C～220 DEG C；Upper chip is pressed on lower chip, when the pressure being applied on chip reach intended pressure 10MPa～
During 30MPa, open ultrasonic-frequency power supply and export high-power 1W～6W, and persistent period 10ms～200ms；The most again pressure is increased
To 20MPa～80MPa, ultrasonic output is reduced to 1W～3W, and retention time 100ms～2000ms, completes upper and lower core
The hottest ultrasonic back bonding of copper copper between sheet micro-copper post.
Upper chip and lower chip are heated to the temperature 160 DEG C needed for back bonding.
Upper chip is pressed on lower chip, when the pressure being applied on chip reaches intended pressure 20MPa, opens ultrasonic
Power supply also exports high-power 3W, and continue for some time preferred 100ms；Pressure is increased to 60MPa, ultrasonic output work the most again
Rate is reduced to 1.5W, and retention time 400ms.
In order to solve above-mentioned second technical problem, what the present invention provided realizes micro-copper the hottest ultrasonic upside-down mounting of intercolumniation copper copper
The device of bonding method, base platform is provided with on heating and sports platform and up and down motion platform, described heating and sports platform
It is provided with lower chip vacuum absorption fixation device；Described up and down motion platform is provided with ultrasonic transducer, described ultrasonic transduction
Device connects has ultrasonic-frequency power supply, described up and down motion platform to be provided with force transducer, and described ultrasonic transducer is provided with chopper
With upper chip vacuum adsorbent equipment, a upper chip identification camera alignment adsorbs the upper core on upper chip vacuum adsorbent equipment
Sheet, a lower chip identification camera alignment adsorbs the lower chip on lower chip vacuum absorption fixation device, described heating
With sports platform, up and down motion platform, lower chip identification camera, lower chip vacuum absorption fixation device, upper chip identification shooting
The control end of head, ultrasonic-frequency power supply and force transducer is all connected with control compunication.
Described upper chip identification camera is upper chip identification CCD camera.
Described lower chip identification camera is lower chip identification CCD camera.
Use micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper and the device thereof of technique scheme, by upper chip
And the micro-copper post alignment between lower chip, upper chip and lower chip are heated to the temperature 60 C needed for back bonding～220 DEG C；
Upper chip is pressed on lower chip, when the pressure being applied on chip reaches intended pressure 10MPa～30MPa, opens super
Acoustic-electric source also exports high-power 1W～6W, and persistent period 10ms～200ms；The most again pressure is increased to 20MPa～
80MPa, ultrasonic output is reduced to 1W～3W, and retention time 100ms～2000ms, complete upper and lower chip micro-copper post it
Between the hottest ultrasonic back bonding of copper copper.After completing above-mentioned bonding, close ultrasonic output；Chip vacuum is closed in pass, core in release
Sheet；Close lower chip vacuum, the lower chip of release；Then taken the chipset up and down of bonding away, completed between a core assembly sheet
Bonding；Repeat above step, carry out the hottest ultrasonic back bonding of copper copper between next core assembly sheet micro-copper post.
The invention has the beneficial effects as follows:
1), at bonding initial stage (within 0-100ms), little pressure/high-power is used (with a size of 10*10mm, to have 12000
As a example by the interconnection of individual micro-copper post chip chamber, the technological parameter of<20MPa,>3W can be used), solve the oxide layer on micro-copper post surface
Removal problem；Phase (after 100) after bonding, use big pressure/small-power (with a size of 10*10mm, to have 12000 micro-copper
As a example by the interconnection of post chip chamber, can use 20MPa, < technological parameter of 3W).Atoms permeating between micro-copper post can either be provided
Required energy, again it can be avoided that delamination between salient point root and pad.
2) the copper copper Direct Bonding interconnection that hot ultrasonic back bonding new method realizes between micro-copper post is utilized, it is to avoid tradition
Interface I MC that Sn cap and bonding interconnection thereof bring is brittle, Sn extrusion, silicon chip problems of crack.
In sum, the intensity after the present invention is a kind of formation that can guarantee that bonded interface micro structure and bonding is with reliable
The micro-copper the hottest ultrasonic upside-down mounting of intercolumniation copper copper (Thermosonic Flip chip) bonding method of property.Its device can either carry
For the energy needed for the atoms permeating between micro-copper post, again it can be avoided that delamination between salient point root and pad.
Accompanying drawing explanation
Fig. 1 is the structural representation of assembly of the invention.
In figure: 1-controls computer；2-ultrasonic transducer；3-force transducer；4-ultrasonic-frequency power supply；The upper chip vacuum of 5-adsorbs
Device；6-upper chip identification CCD camera；7-chopper；The upper chip of 8-；Chip under 9-；The fixing dress of chip vacuum absorption under 10-
Put；11-heating and sports platform；Chip identification CCD camera under 12-；13-base platform；14-up and down motion platform.
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings.
See Fig. 1, it is achieved the device of micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper, base platform 13 is provided with
Heating and sports platform 11 and up and down motion platform 14, heating and sports platform 11 are provided with lower chip vacuum absorption fixation device 10；
Up and down motion platform 14 is provided with ultrasonic transducer 2, and ultrasonic transducer 2 connects ultrasonic-frequency power supply 4, and up and down motion platform 14 sets
Force sensor 3, ultrasonic transducer 2 is provided with chopper 7 and upper chip vacuum adsorbent equipment 5, a upper chip identification CCD shooting
The 6 alignment absorption upper chip 8 on upper chip vacuum adsorbent equipment 5, a lower chip identification CCD camera 12 alignment absorption
Lower chip 9 on lower chip vacuum absorption fixation device 10, heating is known with sports platform 11, up and down motion platform 14, lower chip
Other CCD camera 12, lower chip vacuum absorption fixation device 10, upper chip identification CCD camera 6, ultrasonic-frequency power supply 4 and power sensing
The control end of device 3 all communicates to connect with control computer 1.
See Fig. 1, it is achieved the specific implementation method of the device of micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper is:
First, use and turn over brilliant mechanical hand, upper chip 8 is overturn (micro-copper post is down), and is delivered to below chopper 7, and
By chip 8 on upper chip vacuum adsorbent equipment 5 vac sorb, it is fixed on below chopper 7；
2. use and turn over brilliant mechanical hand, lower chip 9 is delivered to above heating and sports platform 11, micro-copper post upward, lower chip 9
It is fixed in heating and sports platform 11 by lower chip vacuum absorption fixation device 10 vac sorb；
3. obtain chip 8 He respectively by upper chip identification CCD camera 6 and lower chip vacuum absorption fixation device 10
The image of lower chip 9, after controlling computer 1 and identifying, determines the position between upper chip 8 and lower chip 9 and differential seat angle, and leads to
Cross to heat and realize upper being directed between chip 8 and lower chip 9 with translation with rotating of sports platform 11.
4. heating and sports platform 11 are heated to the temperature 60 C needed for back bonding～220 DEG C, preferably 160 DEG C；
5. control computer 1 to control up and down motion platform 14 and down move, drive chopper 7 and upper chip 8 to move downward, and
Upper chip 8 is pressed on lower chip 9；Control the output of computer 1 monitoring force sensor 3 in this process, when being applied to core
Pressure on sheet reaches intended pressure 10MPa～30MPa, and preferably during 20MPa, unlatching ultrasonic-frequency power supply 4 and ultrasonic transducer 2 are also
Export high-power 1W～6W, preferably 3W, and continue for some time 10ms～200ms, preferably 100ms；The most again pressure is increased
To 20MPa～80MPa, preferably 60MPa, the ultrasonic output of ultrasonic transducer 2 is reduced to 1W～3W, preferably 1.5W, and protects
Hold a period of time 100ms～2000ms, preferably 400ms.So far, copper copper between chip 8 and micro-copper post of lower chip 9 is completed
Direct hot ultrasonic back bonding.
6., after completing above-mentioned bonding, close the ultrasonic output of ultrasonic transducer 2；Close and close chip vacuum adsorbent equipment 5
Vacuum, chip 8 in release；Close the vacuum of lower chip vacuum absorption fixation device 10, the lower chip 9 of release；Then taken away
The chipset up and down of bonding, completes the bonding between a core assembly sheet；
7. repeat above step 1-6, carry out the hottest ultrasonic back bonding of copper copper between next core assembly sheet micro-copper post.
Claims (6)
1. the micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper, is characterized in that: by between upper chip and lower chip
Micro-copper post is directed at, and upper chip and lower chip are heated to the temperature 60 C needed for back bonding～220 DEG C；Upper chip is pressed in down
On chip, when the pressure being applied on chip reaches intended pressure 10MPa～30MPa, open ultrasonic-frequency power supply and export big
Power 1W～6W, and persistent period 10ms～200ms；Pressure is increased to 20MPa～80MPa, ultrasonic output the most again
Be reduced to 1W～3W, and retention time 100ms～2000ms, complete copper copper between upper and lower chip micro-copper post the hottest ultrasonic fall
Dress bonding.
Micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper the most according to claim 1, is characterized in that: by upper chip
It is heated to the temperature 160 DEG C needed for back bonding with lower chip.
Micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper the most according to claim 1 and 2, is characterized in that: by upper
Chip is pressed on lower chip, when the pressure being applied on chip reaches intended pressure 20MPa, opens ultrasonic-frequency power supply and exports big
Power 3W, and continue for some time preferred 100ms；Pressure increases to 60MPa the most again, and ultrasonic output is reduced to
1.5W, and retention time 400ms.
4. realize the device of micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper described in claim 1, it is characterized in that: the end
Seat platform (13) is provided with heating and sports platform (11) and up and down motion platform (14), and described heating sets on sports platform (11)
There is lower chip vacuum absorption fixation device (10)；Described up and down motion platform (14) is provided with ultrasonic transducer (2), described
Ultrasonic transducer (2) connects has ultrasonic electric (4), described up and down motion platform (14) to be provided with force transducer (3), and described is super
Sonic transducer (2) is provided with chopper (7) and upper chip vacuum adsorbent equipment (5), a upper chip identification camera alignment absorption
Upper chip on upper chip vacuum adsorbent equipment (5), a lower chip identification camera alignment absorption is inhaled at lower chip vacuum
Lower chip in attached fixing device (10), described heating is taken the photograph with sports platform (11), up and down motion platform (14), lower chip identification
As head, lower chip vacuum absorption fixation device (10), upper chip identification camera, ultrasonic-frequency power supply (4) and the control of force transducer (3)
End processed all communicates to connect with control computer (1).
The device realizing micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper the most according to claim 4, its feature
It is: described upper chip identification camera is upper chip identification CCD camera (6).
6., according to the device realizing micro-the hottest ultrasonic back bonding method of copper intercolumniation copper copper described in claim 4 or 5, it is special
Levy and be: described lower chip identification camera is lower chip identification CCD camera (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610546341.8A CN106206339B (en) | 2016-07-12 | 2016-07-12 | The ultrasonic back bonding method and device thereof of copper copper directly heat between a kind of micro- copper post |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610546341.8A CN106206339B (en) | 2016-07-12 | 2016-07-12 | The ultrasonic back bonding method and device thereof of copper copper directly heat between a kind of micro- copper post |
Publications (2)
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