CN102002672A - Method for metallizing infrared focal plane encapsulated window - Google Patents
Method for metallizing infrared focal plane encapsulated window Download PDFInfo
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- CN102002672A CN102002672A CN2009101948640A CN200910194864A CN102002672A CN 102002672 A CN102002672 A CN 102002672A CN 2009101948640 A CN2009101948640 A CN 2009101948640A CN 200910194864 A CN200910194864 A CN 200910194864A CN 102002672 A CN102002672 A CN 102002672A
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Abstract
The invention provides a method for metallizing an infrared focal plane encapsulated window. In the method, metallization of the metallized area of the infrared encapsulated window is realized by adopting an ionic-assisted evaporation technology, i.e. an ion source with low ion energy and high ion density is placed into evaporation equipment for realizing ion assistance; and a riveting layer, a blocking layer and a welding layer are sequentially evaporated on the metallized area of the encapsulated window under an ionic-assisted atmosphere. In the method, during the process of ionic-assisted metal evaporation, an Ar ion can transfer energy to an evaporated metal atom, thus effectively improving the migration energy of the metal atom on the surface of a substrate, enhancing the injection effect of the metal atom on the substrate, effectively increasing the compactness of a film layer, reducing the stress of the film layer, strengthening the adhesive force of the metal film layer and the substrate, and improving the performances of the film layer.
Description
Technical field
The present invention relates to a kind of making method of optics, relate in particular to a kind of method for metallising of infrared focus plane package window.
Background technology
The development of infrared focus plane Detection Techniques is had higher requirement to device package and infrared Thin Film Filter.A new generation's encapsulation technology is integrated with infrared package window with infrared Thin Film Filter, infrared Thin Film Filter directly is coated on the infrared package window, metallization around window again is welded into infrared focal plane detector with infrared package window and infrared focal plane array at last.
At present, thermal evaporation and sputter vaporization technology are generally adopted in the metallization of infrared focus plane package window.Under the vacuum state, metallic substance is heated evaporation, deposits on the package window.Infrared package window utilizes the figure that mask technique is made to be needed in advance, after the metallization, removes mask, finishes infrared package window metallization.
It is simple, easy to operate that thermal evaporation techniques has equipment, and technological process is the advantage of control easily.But the atoms metal kinetic energy of thermal evaporation is little, and is little with the bonding force of window substrate, and rete is loose, and stress is big.These shortcomings can cause the poor adhesive force of layer of metallized film and window substrate, easily demoulding; Welding property is poor, easily gas leakage.
It is little that the sputter vaporization technology can overcome thermal evaporation atoms metal kinetic energy, the shortcoming little with the substrate bonding force.But need feed Ar gas during the sputter vaporization metallic film as working gas, pressure in vacuum tank is higher, is generally 0.1～1Pa.Therefore, having Ar gas in the metallic film process of growth is deposited in the rete.After package window and detector encapsulation, the Ar gas that is deposited in the rete can slowly be discharged in the detector, influences the performance of detector.
Summary of the invention
Purpose of the present invention exactly in order to address the above problem, provides a kind of method for metallising of infrared focus plane package window.
In order to achieve the above object, the present invention has adopted following technical scheme: a kind of method for metallising of infrared focus plane package window, on the infrared window substrate, implement, be characterized in, the infrared thin film region of substrate intermediary is covered with mask,, place evaporation equipment all around as metallized area; The ion source that ion energy is low, ion density is high of packing in evaporation equipment realizes that ion is auxiliary, metallizes according to the following steps:
A, utilize the cleaning ion source substrate;
B, on the metallized area of substrate evaporation one deck Cr or Ti as riveting layer;
C, on riveting layer evaporation layer of Ni, Pt or Pd as barrier layer;
D, on barrier layer the evaporation layer of Au as weld layer.
Described ion source is that ion source power is 60W～1200W by the Ar ion source of the Ar gas generation of purity 99.9%～99.999%, and air flow is 5～35sccm, and operating pressure is 0.008～0.05Pa.
The sedimentation rate of described riveting layer is controlled at 0.1～1nm/s, and the sedimentation rate of barrier layer is controlled at 0.2～2nm/s, and the sedimentation rate of weld layer is controlled at 0.1～5nm/s.
The advantage of the method for metallising of infrared focus plane package window of the present invention is that in ion assisted evaporative metal process, the Ar ion can be given the evaporated metal atom with the transmission ofenergy of self, effectively improves the migration energy of atoms metal at substrate surface; And improved the injection effect of atoms metal to substrate.Therefore, with respect to evaporation technique, ion assisted evaporative technology can effectively improve the rete density, reduces stress in thin film, strengthens the sticking power of metallic diaphragm and substrate, improves film performance.Be suitable for monolithic technology and brilliant first fullslice.
Embodiment
The method for metallising of infrared focus plane package window of the present invention is, the infrared thin film region of substrate intermediary is covered with polyimide, all around as metallized area, places evaporation equipment; The ion source that ion energy is low, ion density is high of packing in evaporation equipment realizes that ion is auxiliary, utilizes the cleaning ion source substrate; Then on the metallized area of substrate evaporation one deck Cr or Ti as riveting layer; Again on riveting layer evaporation layer of Ni, Pt or Pd as barrier layer; At last on barrier layer the evaporation layer of Au as weld layer.Promptly finish the metallization all around of infrared focus plane package window.
Ion source among the present invention is that ion source power is 60W～1200W by the Ar ion source of the Ar gas generation of purity 99.9%～99.999%, and air flow is 5～35sccm, and operating pressure is 0.008～0.05Pa.
The sedimentation rate of the riveting layer among the present invention is controlled at 0.1～1nm/s, and the sedimentation rate of barrier layer is controlled at 0.2～2nm/s, and the sedimentation rate of weld layer is controlled at 0.1～5nm/s.
Embodiment
Sizes of substrate is 15mm * 13mm,, covers as mask glue as infrared film zone with middle 13mm * 11mm zone with polyimide, and be metallized area all around.Make the metallized area of three package windows respectively:
First package window: with Ar gas as working gas, with the evaporation metal of Cr, with the evaporation metal of Ni, with the evaporation metal of Au as weld layer as barrier layer as riveting layer.Processing parameter is as follows: and ion source power 1000W (250V, 4A); Operating air pressure 0.02Pa; Cleaning time 10min; Cr vaporator rate 0.5nm/s; Ni vaporator rate 1.5nm/s; Au vaporator rate 3nm/s.
Second package window: with Ar gas as working gas, with the evaporation metal of Cr, with the evaporation metal of Ni, with the evaporation metal of Au as weld layer as barrier layer as riveting layer.Processing parameter is as follows: and ion source power 800W (200V, 4A); Operating air pressure 0.015Pa; Cleaning time 12min; Cr vaporator rate 0.5nm/s; Ni vaporator rate 1.5nm/s; Au vaporator rate 3nm/s.
The 3rd package window: with Ar gas as working gas, with the evaporation metal of Cr, with the evaporation metal of Ni, with the evaporation metal of Au as weld layer as barrier layer as riveting layer.Processing parameter is as follows: and ion source power 360w (120V, 3A); Operating air pressure 0.018Pa; Cleaning time 15min; Cr vaporator rate 0.5nm/s; Ni vaporator rate 1.5nm/s; Au vaporator rate 3nm/s.
After metallization is finished, with concentration is the polyimide in infrared film zone in the middle of 2%～40% NaOH or KOH or ammoniacal liquor are removed, go three package windows behind the mask glue through 350 ℃ of bakings of vacuum 30min, test its firm performance with the high temperature gummed tape tearing of 3M company.After the tearing 10 times, three package window metallic diaphragms are not seen demoulding, and the metal area shape is intact.
Claims (3)
1. the method for metallising of an infrared focus plane package window is implemented on the infrared window substrate, it is characterized in that: the infrared thin film region of substrate intermediary is covered with mask, all around as metallized area, place evaporation equipment; The ion source that ion energy is low, ion density is high of packing in evaporation equipment realizes that ion is auxiliary, metallizes according to the following steps:
A, utilize the cleaning ion source substrate;
B, on the metallized area of substrate evaporation one deck Cr or Ti as riveting layer;
C, on riveting layer evaporation layer of Ni, Pt or Pd as barrier layer;
D, on barrier layer the evaporation layer of Au as weld layer.
2. the method for metallising of infrared focus plane package window as claimed in claim 1, it is characterized in that: described ion source is the Ar ion source by the Ar gas generation of purity 99.9%～99.999%, ion source power is 60W～1200W, air flow is 5～35sccm, and operating pressure is 0.008～0.05Pa.
3. the method for metallising of infrared focus plane package window as claimed in claim 1, it is characterized in that: the sedimentation rate of described riveting layer is controlled at 0.1～2nm/s, the sedimentation rate of barrier layer is controlled at 0.2～2nm/s, and the sedimentation rate of weld layer is controlled at 0.1～5nm/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101948640A CN102002672A (en) | 2009-08-31 | 2009-08-31 | Method for metallizing infrared focal plane encapsulated window |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101948640A CN102002672A (en) | 2009-08-31 | 2009-08-31 | Method for metallizing infrared focal plane encapsulated window |
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| Publication Number | Publication Date |
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| CN102002672A true CN102002672A (en) | 2011-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009101948640A Pending CN102002672A (en) | 2009-08-31 | 2009-08-31 | Method for metallizing infrared focal plane encapsulated window |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117842A (en) * | 2009-12-30 | 2011-07-06 | 上海欧菲尔光电技术有限公司 | Infrared focal plane detector packaging window and manufacturing method thereof |
| CN106435481A (en) * | 2016-10-21 | 2017-02-22 | 云南北方昆物光电科技发展有限公司 | Electrode thin-film process technology for packaging of uncooled focal plane detector |
-
2009
- 2009-08-31 CN CN2009101948640A patent/CN102002672A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117842A (en) * | 2009-12-30 | 2011-07-06 | 上海欧菲尔光电技术有限公司 | Infrared focal plane detector packaging window and manufacturing method thereof |
| CN106435481A (en) * | 2016-10-21 | 2017-02-22 | 云南北方昆物光电科技发展有限公司 | Electrode thin-film process technology for packaging of uncooled focal plane detector |
| CN106435481B (en) * | 2016-10-21 | 2020-06-05 | 云南北方昆物光电科技发展有限公司 | Electrode film process technology for packaging uncooled focal plane detector |
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Application publication date: 20110406 |