CN1756010A - Long wavelength semiconductor laser with semi-insulating substrate and preparation method thereof - Google Patents
Long wavelength semiconductor laser with semi-insulating substrate and preparation method thereof Download PDFInfo
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- CN1756010A CN1756010A CN 200410080410 CN200410080410A CN1756010A CN 1756010 A CN1756010 A CN 1756010A CN 200410080410 CN200410080410 CN 200410080410 CN 200410080410 A CN200410080410 A CN 200410080410A CN 1756010 A CN1756010 A CN 1756010A
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Abstract
A kind of long wavelength semiconductor laser with semi-insulating substrate mainly comprises: p side electrode part and N face electrode part and isolation channel between the two; Wherein, p side electrode part and N face electrode part main body comprise: a semi-insulating indium phosphorus substrate; The laser material structure of one low pressure metal organic compound vapour deposition process growth, this laser material structure fabrication is on semi-insulating indium phosphorus substrate; One silica dioxide medium layer, this silica dioxide medium layer evaporation sputters on the material structure; A pair of ditch ridge waveguide district, this pair ditch ridge waveguide district adopt the method for wet etching to be produced on the laser material structure; One p side electrode layer, this p side electrode floor are produced in two ditch ridge waveguide districts; Described isolation channel is to adopt the method for wet etching to form, and the outside of this isolation channel is a N face electrode district, and this isolation channel is formed with a ledge structure; This structure has guaranteed the p side electrode and the N face electrode coplane of laser.
Description
Technical field
The present invention relates to device architecture of a kind of long wavelength semiconductor laser with semi-insulating substrate and preparation method thereof, relate to a kind of on semi-insulating indium phosphorus substrate or rather, adopt low pressure metal organic compound vapour deposition process epitaxial growth long wavelength semiconductor laser epitaxial wafer, adopt wet-etching technology to make device architecture.
Background technology
Long wavelength's high modulation speed semiconductor laser is not only the important devices in the optical fiber communication, but also can be used for carrying out in the military affairs radar signal high-speed transfer.Digital communication at a high speed and analog communication system are the targets that people constantly pursue, and therefore high performance laser needs higher modulation rate, and commonly used-3dB modulation bandwidth is weighed the modulating characteristic of laser.The factor of limit laser device modulation bandwidth is mainly from two aspects, and one is the restriction of device relaxation oscillations frequency, and another is the influence of device parasitic parameter.The pass that can be derived between relaxation oscillations frequency and other parameter of laser by the rate equation of laser is:
Utilize
Can become
ω wherein
nBe the relaxation oscillations frequency of laser, g
0Be gain coefficient, S
0Be photon density in the chamber, τ
pBe photon lifetime, d
0Be active area thickness, J, J
ThBe respectively injected current density and threshold current density.From the viewpoint of circuit element, contact conductor can cause stray inductance, and the active area electric capacity and the interelectrode capacitance of device can cause parasitic capacitance.These parasitic parameters (resistance R, capacitor C, inductance L) have limited bandwidth of a device.The relation of the bandwidth f of parasitic parameter restriction and resistance R, capacitor C is as follows:
For a device, truly measure-the 3dB modulation bandwidth decides by both actings in conjunction.When the parasitic parameter of device is too big, laser-the 3dB modulation bandwidth limits by the bandwidth f of parasitic parameter mainly, the active area structure that improves device merely becomes futile effort, therefore can only be under the prerequisite that has solved the parasitic parameter restriction, by being optimized, the active area of device and structure just can obtain high-3dB modulation bandwidth.
Will to adopt special construction to make that parasitic capacitance, inductance and resistance are reduced to minimum for the influence that reduces parasitic parameter.Device on the semi-insulating substrate has little parasitic capacitance, this just makes parasitic parameter to the influence of the laser modulation bandwidth influence less than relaxation oscillations, so just can be only by optimizing the semiconductor laser that laser active area characteristic and device architecture obtain two-forty.
Owing to be on semi-insulating substrate, to make laser, so drawing of N face electrode is to make difficult point, solve normal low table N face electrode structure (accompanying drawing 1) and the hole N face electrode structure (accompanying drawing 2) of adopting of this difficulty, the A among Fig. 1, Fig. 2 wherein, B is respectively the P face and the N face electrode of laser.The tube core of low table N face electrode structure when carrying out the high frequency characteristics test, because there are difference in height in N face electrode and p side electrode, can cause and can not directly measure, or the electrode contact is bad in measuring.In addition contact conductor is also brought inconvenience.Hole N face electrode structure also has its limitation, and it is long that at first pore space structure has limited the chamber of laser, and this obviously is not suitable for the long laser in any chamber of cleavage; Draw from hole owing to N face electrode in addition, this structure has not only increased the difficulty of etching process in the device fabrication processes, caused the difficulty (because P face, N face electrode still are not positioned at same plane in this kind structure) of measurement, contact conductor equally, the more important thing is that the reliability of go between intensity and lead-in wire is had a greatly reduced quality.
Summary of the invention
The objective of the invention is to, device architecture of a kind of long wavelength semiconductor laser with semi-insulating substrate and preparation method thereof is provided, it can obtain higher modulation rate.The advantage of this device is that high-frequency test is convenient, contact conductor, and device package is simple.
To achieve these goals, the present invention proposes a kind of long wavelength semiconductor laser with semi-insulating substrate, it is characterized in that: mainly comprise:
P side electrode part and N face electrode part and isolation channel between the two;
Wherein, p side electrode part and N face electrode part main body comprise:
One semi-insulating indium phosphorus substrate;
The laser material structure of one low pressure metal organic compound vapour deposition process growth, this laser material structure fabrication is on semi-insulating indium phosphorus substrate;
One silica dioxide medium layer, this silica dioxide medium layer evaporation sputters on the material structure;
A pair of ditch ridge waveguide district, this pair ditch ridge waveguide district adopt the method for wet etching to be produced on the laser material structure;
One p side electrode layer, this p side electrode floor are produced in two ditch ridge waveguide districts;
Described isolation channel is to adopt the method for wet etching to form, and the outside of this isolation channel is a N face electrode district, and this isolation channel is formed with a ledge structure; This structure has guaranteed the p side electrode and the N face electrode coplane of laser.
Wherein the material structure of laser is followed successively by from down to up:
Ducting layer, P+ type indium phosphorus top covering, P++ indium gallium arsenic P face contact layer on one deck N type indium phosphorus resilient coating, N++ indium gallium arsenic N face contact layer, N+ type indium phosphorus under-clad layer, InGaAsP lower waveguide layer and InGaAsP active area, the InGaAsP.
The manufacture method of a kind of long wavelength semiconductor laser with semi-insulating substrate of the present invention is characterized in that, its making step is:
Step 1: on semi-insulating indium phosphorus substrate, with low pressure metal organic chemical vapor deposition epitaxial grown material structure;
Step 2: on material structure, adopt the method for evaporation sputter to make a silica dioxide medium layer;
Step 3: on material structure, make two ditch ridge waveguide districts with the method for etching;
Step 4: between this pair ditch ridge waveguide district and N face electrode district, adopt wet etching to form isolation channel, on material structure, make N face electrode district with the method for wet etching;
Step 5: on two ditch ridge waveguide districts and N face electrode district, make laser electrode.
Wherein the material structure of laser is followed successively by from down to up:
Ducting layer, P+ type indium phosphorus top covering, P++ indium gallium arsenic P face contact layer on one deck N type indium phosphorus resilient coating, N++ indium gallium arsenic N face contact layer, N+ type indium phosphorus under-clad layer, InGaAsP lower waveguide layer and InGaAsP active area, the InGaAsP.
When wherein making two ditch ridge waveguides district of laser, adopt silica dioxide medium film and photoresist as the barrier layer, corrosive liquid is that sulfuric acid is corrosive liquid, and hydrochloric acid is the corrosive liquid use that cooperatively interacts.
Wherein the N face electrode of laser is gone between on the P++ indium-gallium-arsenic plane of top by ledge structure by the N++ ingaas layer that is in the laser structure lower bottom part; Be to be corrosive liquid with sulfuric acid, hydrochloric acid is corrosive liquid, and bromine is that corrosive liquid is used corrosion and forms.
Ledge structure wherein, the lead-in wire method of this kind ledge structure is that ledge structure is divided into two or a plurality of stepped step, this kind method is not only applicable to the contact conductor of semi-insulating substrate laser, is applicable to the occasion of other existence such as detector, planar laser with vertical cavity to the lead-in wire of high table top yet.
The wherein mutual isolation of obtaining N face, p side electrode by band glue stripping electrode in the laser electrode manufacturing process.The titanium platinum electrode in part N++ indium gallium arsenic N face contact layer and part P face ridge waveguide zone is stripped from, and so both can well isolate N face, p side electrode, can dwindle electrode area again and reduce the influence of parasitic capacitance to the laser modulation characteristic.
The manufacture craft advantages of simple that the present invention adopts can be saved cost, shortens fabrication cycle.
Description of drawings
Below in conjunction with accompanying drawing specific embodiment is described in detail, further specifies structure of the present invention, characteristics.Wherein:
Fig. 1 is the structural representation of the existing semi-insulating substrate laser of low table N face electrode structure, and wherein the A district is the p side electrode district, and the B district is a N face electrode district;
Fig. 2 is the structural representation of the existing semi-insulating substrate laser of hole N face electrode structure, and wherein the A district is the p side electrode district, and the B district is a N face electrode district;
Fig. 3 is a semiconductor laser structure schematic diagram proposed by the invention, and wherein the A district is the p side electrode district, and the B district is a N face electrode district, and C is an isolation channel between the two;
Fig. 4 is many ledge structures schematic diagram (being two steps here) that the present invention proposes, wherein mark is consistent with the mark of Fig. 5, annotate in addition: (10) are the silica dioxide medium film, (20) be P face titanium platinum electrode, (30) be N face titanium platinum electrode, (40) be two ditch ridged parts of laser, (50) are the stepped electrode of laser N face;
Fig. 5 is the material structure of the laser that adopts of the present invention;
Fig. 6 is the schematic diagram of laser fabrication step proposed by the invention;
Fig. 7 is the microphoto of laser profile proposed by the invention;
Fig. 8 is the microphoto at laser N face electrode table top place proposed by the invention.
Embodiment
Describe structure according to specific embodiment of the invention long wavelength semiconductor laser with semi-insulating substrate and preparation method thereof in detail below in conjunction with accompanying drawing.
1, the device architecture of laser sees also Fig. 3, Fig. 4 and shown in Figure 5:
A kind of long wavelength semiconductor laser with semi-insulating substrate of the present invention mainly comprises:
P side electrode part A and N face electrode part B and isolation channel C between the two;
Wherein, p side electrode part A and N face electrode part B main body comprise:
One semi-insulating indium phosphorus substrate 1;
The laser material structure 60 of one low pressure metal organic compound vapour deposition process growth, this laser material structure 60 is produced on the semi-insulating indium phosphorus substrate 1;
One silica dioxide medium layer 10, these silica dioxide medium layer 10 evaporations sputter on the material structure 60; The material structure 60 of this laser is followed successively by from down to up:
Ducting layer 7, P+ type indium phosphorus top covering 8, P++ indium gallium arsenic P face contact layer 9 on one deck N type indium phosphorus resilient coating 2, N++ indium gallium arsenic N face contact layer 3, N+ type indium phosphorus under-clad layer 4, InGaAsP lower waveguide layer 5 and InGaAsP active area 6, the InGaAsP.
A pair of ditch ridge waveguide district 40, this pair ditch ridge waveguide district 40 adopts the method for wet etching to be produced on the laser material structure 60;
One p side electrode layer 20, this p side electrode floor 20 are produced in two ditch ridge waveguide districts 40;
Described isolation channel C adopts the method for wet etching to form, and the outside of this isolation channel C is a N face electrode district 30, and this isolation channel C is formed with a ledge structure 50; This structure has guaranteed the p side electrode and the N face electrode coplane of laser;
It is shown in Figure 1 in conjunction with consulting, the manufacture method of a kind of long wavelength semiconductor laser with semi-insulating substrate of the present invention, and its making step is:
Step 1: on semi-insulating indium phosphorus substrate 1, with low pressure metal organic chemical vapor deposition epitaxial grown material structure 60; The material structure 60 of this laser is followed successively by from down to up:
Ducting layer 7, P+ type indium phosphorus top covering 8, P++ indium gallium arsenic P face contact layer 9 on one deck N type indium phosphorus resilient coating 2, N++ indium gallium arsenic N face contact layer 3, N+ type indium phosphorus under-clad layer 4, InGaAsP lower waveguide layer 5 and InGaAsP active area 6, the InGaAsP;
Step 2: on material structure 60, adopt the method for evaporation sputter to make a silica dioxide medium layer 10;
Step 3: on material structure 60, make two ditch ridge waveguide districts 40 with the method for etching; When making two ditch ridge waveguides district 40 of laser, employing silica dioxide medium film and photoresist are as the barrier layer, and corrosive liquid is that sulfuric acid is corrosive liquid, and hydrochloric acid is the corrosive liquid use that cooperatively interacts;
Step 4: between this pair ditch ridge waveguide district 40 and N face electrode district 30, adopt wet etching to form isolation channel C, on material structure 60, make N face electrode district 30 with the method for wet etching;
Step 5: make laser electrode on two ditch ridge waveguides district 40 and N face electrode district 30, the N face electrode district 30 of this laser goes between on the P++ indium-gallium-arsenic plane of top 20 by the N++ ingaas layer that is in the laser structure lower bottom part by ledge structure 50; Be to be corrosive liquid with sulfuric acid, hydrochloric acid is corrosive liquid, and bromine is that corrosive liquid is used corrosion and forms.
Wherein the N face electrode district 30 of laser goes between on the P++ indium-gallium-arsenic plane of top 20 by the N++ ingaas layer that is in the laser structure lower bottom part by ledge structure 50; Be to be corrosive liquid with sulfuric acid, hydrochloric acid is corrosive liquid, and bromine is that corrosive liquid is used corrosion and forms; The lead-in wire method of this ledge structure 50 is that ledge structure 50 is divided into two or a plurality of stepped step, this kind method is not only applicable to the contact conductor of semi-insulating substrate laser, is applicable to the occasion of other existence such as detector, planar laser with vertical cavity to the lead-in wire of high table top yet.
Wherein obtaining 30,20 of N face, p side electrode by band glue stripping electrode in the laser electrode manufacturing process isolates mutually; The titanium platinum electrode in part N++ indium gallium arsenic N face contact layer 3 and 40 territories, part P face ridge waveguide district is stripped from, so both can well isolate N face, p side electrode district 30,20, and can dwindle electrode area again and reduce the influence of parasitic capacitance the laser modulation characteristic.
Embodiment
The structure of the long wavelength semiconductor laser with semi-insulating substrate of present embodiment mainly comprises p side electrode part A and N face electrode part B and isolation channel C between the two (among Fig. 3).The A main body comprises p side electrode layer 20, is two ditch ridge waveguide districts 40 under it, is the laser material structure 60 of low pressure metal organic compound vapour deposition process growth below again, and the bottom is semi-insulating indium phosphorus substrate 1; The B main body is a N face electrode district 30, and it is from N++ indium gallium arsenic N face contact layer 3, is connected on the table top that P++ indium gallium arsenic forms 9 by ledge structure 50.This design feature has guaranteed the p side electrode and the N face electrode coplane (among Fig. 4) of laser.
2. the metal organic chemical compound vapor deposition method of material structure growth
See also shown in Figure 5, adopt low pressure metal organic compound vapour deposition process growth technology to grow one deck N type indium phosphorus resilient coating 2 at semi-insulating indium phosphorus substrate 1, the N++ indium gallium arsenic N face contact layer 3 of then growing, N+ type indium phosphorus under-clad layer 4, InGaAsP lower waveguide layer 5 and InGaAsP active area 6, continued growth on active area then, ducting layer 7 on the InGaAsP, P+ type indium phosphorus top covering 8, P++ indium gallium arsenic P face contact layer 9.
3. the making of two ditch ridged waveguide structures
See also shown in Fig. 6 a, the 6b, at first evaporation sputter layer of silicon dioxide dielectric layer 10 on epitaxially grown laser structure 60 adopts-50/500 reticle (cycle is 500 μ m, and bar is wide to be 50 μ m, is cloudy version) to make the window of 50 μ m by lithography; On this structure, adopt 5/500 reticle (cycle is 500 μ m, and bar is wide to be 5 μ m, is the sun version) alignment to make the corrosion of 5 μ m photoresists by lithography and stop window; Select (the H of sulfuric acid system at last for use
2SO
4, H
2O, H
2O2) corrosive liquid, hydrochloric acid system (HCl, H
2O) corrosive liquid selective corrosion goes out two ditch ridge structures (40).
4.N the making of face electrode table top
See also shown in Fig. 6 c, result of upper experiment is handled back band glue growthing silica dielectric layer, band glue separates the p side electrode window.Adopt-100/500 reticle dislocation alignment to make 100 μ m silica dioxide medium layer window by lithography; Select (the H of sulfuric acid system for use
2SO
4, H
2O, H
2O
2) corrosive liquid, hydrochloric acid system (HCl, H
2O) corrosive liquid, bromine system (Br, HBr, H
2O) corrosive liquid cooperatively interacts, and repeatedly corrosion draws the structure of Fig. 6 c, and wherein the isolation channel at N face electrode place stops in the N++ indium gallium arsenic N face contact layer.Adopt the multistep corrosion to draw the stepped table top of N++ ingaas layer to the P++ ingaas layer, at first be to adopt that to select sulfuric acid for use be corrosive liquid the P++ indium gallium arsenic contact layer on top layer is eroded, utilizing hydrochloric acid again is corrosive liquid corrosion P+ type indium phosphorus top covering, with bromine is that corrosive liquid erodes InGaAsP ducting layer and InGaAsP active area, be corrosive liquid corrosion with sulfuric acid again this moment, because sulfuric acid is that corrosive liquid does not corrode the indium phosphate material, so it can not corrode N+ type indium phosphorus under-clad layer, utilizing sulfuric acid is that corrosive liquid can slight characteristics of corroding the edge photoresist just can erode away step at P++ indium gallium arsenic P face contact layer place.Be the corrosive liquid corrosion with hydrochloric acid more at last, just can erode the P+ type indium phosphorus top covering at N+ type indium phosphorus under-clad layer and step place, form the step-like structure described in the present invention.
5. the making of laser electrode
See also shown in Fig. 6 d, because P face in the top structure, N face electrode is in the same side, also is a technology skill so how to guarantee both good isolation, also should reduce the area of electrode simultaneously under the prerequisite that does not influence process complexity as far as possible.(cycle is 500 μ m to select the 50/-180/70/-200 reticle for use, 50 μ m, 70 μ m are sun, and 180 μ m, 200 μ m are cloudy) alignment, band glue growth titanium platinum electrode, band glue peels off unwanted electrode and finally obtains electrode (20), (30), structure shown in Fig. 6 d.The titanium platinum electrode in part N++ indium gallium arsenic N face contact layer and part P face ridge waveguide zone is stripped from, and so both can well isolate N face, p side electrode, can dwindle electrode area again and reduce the influence of parasitic capacitance to the laser modulation characteristic.
6. other subsequent process
The slice, thin piece that 4 steps were drawn carries out the grinding and polishing substrate, cleavage tube core and cavity surface film coating, last packaging and testing.
Accompanying drawing 7 is for testing the microphoto of the semi-insulating substrate laser profile of making, and Fig. 8 is the microphoto at semi-insulating substrate laser N face electrode table top place.
Claims (8)
1. long wavelength semiconductor laser with semi-insulating substrate is characterized in that: mainly comprise:
P side electrode part and N face electrode part and isolation channel between the two;
Wherein, p side electrode part and N face electrode part main body comprise:
One semi-insulating indium phosphorus substrate;
The laser material structure of one low pressure metal organic compound vapour deposition process growth, this laser material structure fabrication is on semi-insulating indium phosphorus substrate;
One silica dioxide medium layer, this silica dioxide medium layer evaporation sputters on the material structure;
A pair of ditch ridge waveguide district, this pair ditch ridge waveguide district adopt the method for wet etching to be produced on the laser material structure;
One p side electrode layer, this p side electrode floor are produced in two ditch ridge waveguide districts;
Described isolation channel is to adopt the method for wet etching to form, and the outside of this isolation channel is a N face electrode district, and this isolation channel is formed with a ledge structure; This structure has guaranteed the p side electrode and the N face electrode coplane of laser.
2. long wavelength semiconductor laser with semi-insulating substrate according to claim 1 is characterized in that, wherein the material structure of laser is followed successively by from down to up:
Ducting layer, P+ type indium phosphorus top covering, P++ indium gallium arsenic P face contact layer on one deck N type indium phosphorus resilient coating, N++ indium gallium arsenic N face contact layer, N+ type indium phosphorus under-clad layer, InGaAsP lower waveguide layer and InGaAsP active area, the InGaAsP.
3. the manufacture method of a long wavelength semiconductor laser with semi-insulating substrate is characterized in that, its making step is:
Step 1: on semi-insulating indium phosphorus substrate, with low pressure metal organic chemical vapor deposition epitaxial grown material structure;
Step 2: on material structure, adopt the method for evaporation sputter to make a silica dioxide medium layer;
Step 3: on material structure, make two ditch ridge waveguide districts with the method for etching;
Step 4: between this pair ditch ridge waveguide district and N face electrode district, adopt wet etching to form isolation channel, on material structure, make N face electrode district with the method for wet etching;
Step 5: on two ditch ridge waveguide districts and N face electrode district, make laser electrode.
4. the manufacture method of long wavelength semiconductor laser with semi-insulating substrate according to claim 3 is characterized in that, wherein the material structure of laser is followed successively by from down to up:
Ducting layer, P+ type indium phosphorus top covering, P++ indium gallium arsenic P face contact layer on one deck N type indium phosphorus resilient coating, N++ indium gallium arsenic N face contact layer, N+ type indium phosphorus under-clad layer, InGaAsP lower waveguide layer and InGaAsP active area, the InGaAsP.
5. the manufacture method of long wavelength semiconductor laser with semi-insulating substrate according to claim 3, it is characterized in that, when wherein making two ditch ridge waveguides district of laser, adopt silica dioxide medium film and photoresist as the barrier layer, corrosive liquid is that sulfuric acid is corrosive liquid, and hydrochloric acid is the corrosive liquid use that cooperatively interacts.
6. the manufacture method of long wavelength semiconductor laser with semi-insulating substrate according to claim 3, it is characterized in that wherein the N face electrode of laser is gone between on the P++ indium-gallium-arsenic plane of top by ledge structure by the N++ ingaas layer that is in the laser structure lower bottom part; Be to be corrosive liquid with sulfuric acid, hydrochloric acid is corrosive liquid, and bromine is that corrosive liquid is used corrosion and forms.
7. according to the manufacture method of claim 3 or 6 described long wavelength semiconductor laser with semi-insulating substrate, it is characterized in that, ledge structure wherein, the lead-in wire method of this kind ledge structure is that ledge structure is divided into two or a plurality of stepped step, this kind method is not only applicable to the contact conductor of semi-insulating substrate laser, is applicable to the occasion of other existence such as detector, planar laser with vertical cavity to the lead-in wire of high table top yet.
8. according to the manufacture method of long wavelength semiconductor laser with semi-insulating substrate according to claim 3, it is characterized in that, wherein the mutual isolation of obtaining N face, p side electrode by band glue stripping electrode in the laser electrode manufacturing process.The titanium platinum electrode in part N++ indium gallium arsenic N face contact layer and part P face ridge waveguide zone is stripped from, and so both can well isolate N face, p side electrode, can dwindle electrode area again and reduce the influence of parasitic capacitance to the laser modulation characteristic.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017959B (en) * | 2006-02-09 | 2011-09-21 | 三星Led株式会社 | Laser diode having ridge portion |
| CN102306901A (en) * | 2006-06-30 | 2012-01-04 | 英特尔公司 | Electrically pumped semiconductor evanescent laser |
| CN103397376A (en) * | 2013-07-23 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system |
| CN104377298A (en) * | 2014-12-11 | 2015-02-25 | 北京工业大学 | Flip-chip bonding electrode structure of surface-type semiconductor laser device |
| CN104505420A (en) * | 2014-12-24 | 2015-04-08 | 苏州矩阵光电有限公司 | Photoelectric detector and preparation method of photoelectric detector |
| CN106340809A (en) * | 2016-10-26 | 2017-01-18 | 中国科学院半导体研究所 | Edge-emitting semiconductor laser of coplanar electrodes |
| CN110676330A (en) * | 2019-10-14 | 2020-01-10 | 重庆邮电大学 | Low-power-consumption waveguide photodetector with optical isolation between photosensitive table top and N-contact table top |
| WO2020162447A1 (en) * | 2019-02-08 | 2020-08-13 | 古河電気工業株式会社 | Semiconductor element |
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2004
- 2004-09-29 CN CN 200410080410 patent/CN1756010A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017959B (en) * | 2006-02-09 | 2011-09-21 | 三星Led株式会社 | Laser diode having ridge portion |
| CN102306901A (en) * | 2006-06-30 | 2012-01-04 | 英特尔公司 | Electrically pumped semiconductor evanescent laser |
| US8767792B2 (en) | 2006-06-30 | 2014-07-01 | Intel Corporation | Method for electrically pumped semiconductor evanescent laser |
| CN103397376A (en) * | 2013-07-23 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system |
| CN104377298A (en) * | 2014-12-11 | 2015-02-25 | 北京工业大学 | Flip-chip bonding electrode structure of surface-type semiconductor laser device |
| CN104505420A (en) * | 2014-12-24 | 2015-04-08 | 苏州矩阵光电有限公司 | Photoelectric detector and preparation method of photoelectric detector |
| CN106340809A (en) * | 2016-10-26 | 2017-01-18 | 中国科学院半导体研究所 | Edge-emitting semiconductor laser of coplanar electrodes |
| WO2020162447A1 (en) * | 2019-02-08 | 2020-08-13 | 古河電気工業株式会社 | Semiconductor element |
| JPWO2020162447A1 (en) * | 2019-02-08 | 2021-12-09 | 古河電気工業株式会社 | Semiconductor element |
| JP7458330B2 (en) | 2019-02-08 | 2024-03-29 | 古河電気工業株式会社 | semiconductor element |
| CN110676330A (en) * | 2019-10-14 | 2020-01-10 | 重庆邮电大学 | Low-power-consumption waveguide photodetector with optical isolation between photosensitive table top and N-contact table top |
| CN110676330B (en) * | 2019-10-14 | 2021-07-13 | 重庆邮电大学 | Low-power-consumption waveguide photodetector with optical isolation between photosensitive table top and N-contact table top |
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