CN110676330B - Low-power-consumption waveguide photodetector with optical isolation between photosensitive table top and N-contact table top - Google Patents
Low-power-consumption waveguide photodetector with optical isolation between photosensitive table top and N-contact table top Download PDFInfo
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Abstract
The invention claims a low-power waveguide photodetector structure for optical isolation between a photosensitive mesa and an N-contact mesa, which integrates an optical waveguide and a photodiode on a semi-insulating substrate. The photodiode has optimized energy band structure, doping distribution and epitaxial layer thickness, and mainly comprises a non-depletion P-type light absorption layer with linear gradient doping distribution, an N-type electron collection layer (non-light absorption layer) with linear gradient doping distribution, and a band gap gradient spacing layer with sandwich dipole doping distribution between the absorption layer and the collection layer. The photosensitive table top and the N contact table top are isolated optically by manufacturing a groove on the N table top and depositing an upper metal film electrode, so that the limitation of the optical waveguide to light is improved; a mesa isolated from the N mesa is manufactured at the tail end of the optical waveguide, and a metal film is deposited to be used as a light reflector, so that the effective absorption length of the device is improved, and the technical scheme is used for relieving the mutual restriction of the bandwidth and the quantum efficiency of the optical detector.
Description
Technical Field
The invention belongs to the technical field of optical communication and photoelectron, and particularly relates to a low-power-consumption waveguide photodetector structure for optical isolation between a photosensitive table top and an N-contact table top.
Background
High quantum efficiency, broadband, and high output power photodetectors are key components in optical communication systems. In general, there is a mutually restrictive relationship between the bandwidth and quantum efficiency of a photodetector. The two main bandwidth limiting factors in photodetectors are the carrier transit time and the RC time. The RC time limit is mitigated by reducing the device area or increasing the depletion layer thickness, thereby reducing the junction capacitance. However, increasing the depletion layer thickness, and in particular the depletion absorber layer thickness, will increase the carrier transit time. On the other hand, reducing the device area and the thickness of the absorbing layer will reduce the external quantum efficiency of the photodetector. The RC delay time can be reduced by increasing the thickness of the low-doped N-type depletion layer which is not light-absorbing under the condition of not obviously influencing the carrier transit time; the carrier transit time can be reduced without increasing the RC delay time by reducing the thickness of the non-depleted, highly doped P-type absorber layer. However, an increase in the thickness of the depletion layer will result in an increase in the required applied reverse bias to maintain its depletion state. The increased reverse bias will increase the self-heating effect because most of the joule heating generated in the device is equal to the product of the reverse bias and the output photocurrent. Therefore, for photodetectors, miniaturized photosensitive mesas are typically required in order to achieve a 3-dB bandwidth covering from dc to sub-terahertz. However, the small size of the photosensitive mesa results in difficult optical coupling, exhibits small external quantum efficiency, is prone to self-heating effects, and ultimately thermally fails under high power operation. At present, there is no method for solving the mutual restriction between the bandwidth and the quantum efficiency of the waveguide photodetector, so a technical scheme for relieving the bandwidth and the quantum efficiency is needed to be provided.
The space charge effect and the self-heating effect are two major factors limiting the bandwidth and the output power of the photodetector, and the space charge effect can be weakened by increasing the external bias voltage at present, but the self-heating effect is increased. The self-heating effect can be weakened by adopting measures such as passive heat dissipation, active refrigeration and the like, but the whole structure of the device is complex and the total power consumption is larger. Therefore, an optimized structure is required to suppress the self space charge effect and reduce the dependence of the device on the applied bias.
Disclosure of Invention
In order to solve the problem of mutual restriction between quantum efficiency and high-speed response of a semiconductor optical detector in the prior art, the invention improves the structure of the prior waveguide type optical detector; the low-power-consumption waveguide optical detector with broadband, high quantum efficiency and high output power is designed, wherein the optical waveguide and the optical detector are monolithically integrated; the photosensitive table-board and the N contact table-board are optically isolated and a metal film is deposited to be used as a light reflector, the table-board is manufactured at the tail end of the optical waveguide and the metal film is deposited to be used as the light reflector, so that light is better limited on the photosensitive table-board, the quantum efficiency of the device is improved, the contradiction that the quantum efficiency is sharply reduced when the bandwidth of the device is improved in a miniaturized active area is relieved, and the method is a solution for the optical detector to simultaneously achieve high quantum efficiency and broadband. In addition, in order to reduce the space charge effect inside the device, thereby weakening the dependence of the device performance on the applied bias voltage and simultaneously weakening the self-heating effect of the device, the epitaxial layer parameters and the device structure of the photodetector need to be optimized. The invention discloses an epitaxial layer structure and doping distribution of a photodiode capable of inhibiting space charge effect for the first time. The technical scheme of the invention is as follows:
a low-power waveguide photodetector with optical isolation between a photosensitive table top and an N contact table top comprises a semi-insulating substrate and a buffer layer, wherein an optical waveguide lower cladding layer, an optical waveguide core layer, an optical matching layer, an electron collecting layer, a first spacing layer, a second spacing layer, a third spacing layer, a light absorbing layer, an electron blocking layer, a P type contact layer, an N metal electrode manufactured on the N contact layer and a P metal electrode manufactured on the P contact layer are sequentially superposed on the semi-insulating substrate and the buffer layer; the semi-insulating substrate and the buffer layer are respectively used as a substrate of a device and for improving the quality of epitaxial materials, the optical waveguide lower cladding layer is used for preventing light energy from leaking to the substrate, the optical waveguide core layer is used as a guide layer of an optical signal, the optical matching layer is used for guiding light to disappear towards the light absorption layer, the electronic collection layer is used for electronic transportation and regulating and controlling the capacitance of the device, the first spacing layer is used for improving the potential barrier of the spacing layer area, the second spacing layer is used for smoothing a conduction band, the third spacing layer is used for improving the potential barrier of the spacing layer area, the light absorption layer is used for completing conversion from light to electricity, the electronic barrier layer is used for preventing electrons from diffusing to.
Furthermore, the semi-insulating substrate and the buffer layer are made of the same material; the real part of the refractive index of the material used in the epitaxial layers from the buffer layer on the semi-insulating substrate side to the light absorbing layer tends to increase in order to allow light to escape from the optical waveguide into the absorbing layer.
Further, the thickness of the lower cladding layer of the optical waveguide is between 0.5 μm and 2 μm, the doping type is donor type or n type, and the doping concentration is 5 × 1018Atom/cm3To 1X 1019Atom/cm3To (c) to (d); the thickness of the optical waveguide core layer is 1 μm to 3 μm, the doping type is donor type or n type, and the doping concentration is 2 × 1018Atom/cm3To 5X 1018Atom/cm3To (c) to (d); to improve the light coupling efficiency, the geometry of the light incident end of the optical waveguide in the light incident direction may be other than rectangular.
Further, the thickness of the optical matching layer is between 0.2 μm and 0.6 μm, the doping type is donor type or n type, and the doping concentration is 5 × 1017Atom/cm3To 1X 1018Atom/cm3To (c) to (d); the thickness of the electron collecting layer is 0.1 μm to 1 μm, the doping type is donor type or n type, and the doping concentration is 1 × 10 from one end near the optical matching layer17Atom/cm3Linearly tapered to about 1 x 10 near one end of the first spacer layer14Atom/cm3。
Further, the first spacer layer (cliff layer or cliff layer) has a thickness of about 0.01 μm, a doping type of a donor type or an n type, and a doping concentration of 1.5 × 1018Atom/cm3Left and right; the second spacer layer is made of linear or gradient material with composition matched with the substrate lattice, and its work function is changed from the linear or gradient work function equal to that of the first spacer layer to that of the third spacer layer, its thickness is 0.011 micrometers-0.018 micrometers, its doping type is donor type or n type, and its doping concentration is not higher than 5X 1015Atom/cm3(ii) a If the epitaxial growth of the linear gradient material is difficult, gradient is adopted; the third spacer layer has a thickness of about 0.01 μm, a doping type of acceptor type or p type, and a doping concentration of 1.5 × 1018Atom/cm3Left and right.
Further, the light absorption layer has a thickness of 0.05 μm to 1.2 μm, a doping type of acceptor type or p type, and a doping concentration of 3 × 10 from the end near the third spacer layer17Atom/cm3Linearly changing to about 8 x 10 near one end of the electron blocking layer18Atom/cm3(ii) a The thickness of the electron blocking layer is between 0.015 mu m and 0.1 mu m, the doping type is acceptor type or p type, and the doping concentration is 1 multiplied by 1019Atom/cm3To 3X 1019Atom/cm3To (c) to (d); the thickness of the P contact layer is about 0.05 μm, the doping type is acceptor type or P type, and the doping concentration is 2 × 1019Atom/cm3To 5X 1019Atom/cm3In the meantime.
Further, the size of the optical waveguide core layer corresponding to the portion of the optical waveguide core layer constituting the photosensitive mesa in the direction perpendicular to the light incident direction is the same as that of the light absorbing layer, mesas constituted by the optical waveguide core layer are present on the left and right sides of the photosensitive mesa, the distance between the mesa and the photosensitive mesa is 3 μm to 5 μm, and N-contact metal electrodes having a width of about 7 μm and a thickness of 0.5 μm are deposited in regions other than the regions about 1 μm to 3 μm from the both sides of the photosensitive mesa; in the light incidence direction, the end of the optical waveguide is provided with a mesa composed of an optical waveguide lower cladding layer, an optical waveguide core layer, an optical matching layer and an electron collecting layer, the distance between the mesa and the N contact mesa is about 1-2 μm, and the deposition area on the mesa is 3 × 12 μm within the range of 1-4 μm from the N contact mesa2And the metal film with the thickness of 0.5 mu m and the N contact electrode can be completed by the same metal deposition process.
Further, the size of the photosensitive mesa in the direction parallel to the incident light is between 0.5 μm and 200 μm, the size of the photosensitive mesa in the direction perpendicular to the incident light is between 1 μm and 20 μm, the size of the light matching layer in the direction parallel to the incident light is between 2 μm and 9 μm longer than that of the electron collecting layer, and the length of the incident end of the light waveguide is between 3 μm and 30 μm.
The invention has the following advantages and beneficial effects:
the invention provides a low-power-consumption waveguide photodetector structure for optical isolation between a photosensitive table top and an N-contact table top for the first time, wherein an optical waveguide and a photodiode are integrated on a semi-insulating substrate, and the low-power-consumption waveguide photodetector structure is a beneficial structure capable of simultaneously realizing broadband, high responsivity and high radio frequency output power. The photodiode has an optimized energy band structure, impurity distribution and layer thickness, and mainly comprises a non-depletion P-type light absorption layer with linear gradient doping distribution, an N-type electron collection layer (non-light absorption layer) with linear gradient doping distribution, and a band gap gradient spacing layer with sandwich dipole doping distribution between the absorption layer and the collection layer; the self-bias voltage suppressor has the capability of suppressing the self space charge effect, and reduces the dependence of self performance on external bias voltage and the self heat effect. The photosensitive table top and the N contact table top are isolated optically by manufacturing a groove on the N table top and depositing an upper metal film electrode, so that the limitation of the optical waveguide to light is improved; a mesa isolated from the N mesa is manufactured at the tail end of the optical waveguide, and a metal film is deposited to be used as a light reflector, so that the effective absorption length of the optical waveguide is improved, and the technical scheme is a technical scheme for effectively relieving the mutual restriction of the bandwidth and the quantum efficiency of the optical detector.
Drawings
FIG. 1 is a perspective view of a low power waveguide photodetector providing optical isolation between a photosensitive mesa and an N-contact mesa in accordance with a preferred embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the active region of a preferred embodiment of the low power waveguide photodetector of the present invention providing optical isolation between the photosensitive mesa and the N-contact mesa in a direction perpendicular to the incident light;
Detailed Description
The technical solutions in the embodiments of the present invention will be described in detail and clearly with reference to the accompanying drawings. The described embodiments are only some of the embodiments of the present invention.
The technical scheme for solving the technical problems is as follows: the monolithic integrated low-power waveguide type optical detector structure solves the problem that the quantum efficiency and the frequency response bandwidth of the traditional semiconductor optical detector are mutually restricted, and can be widely applied to the fields of optical fiber communication, satellite communication, optical signal processing and the like.
Referring to the perspective schematic view of the device shown in fig. 1 and the schematic cross-sectional view of the active region perpendicular to the light incidence direction shown in fig. 2, as a specific embodiment, the low-power waveguide photodetector for optical isolation between the photosensitive mesa and the N-contact mesa of the present invention includes an epitaxial layer from a bottom layer to a top layer, which may be sequentially: the semi-insulating substrate and buffer layer 1, the optical waveguide lower cladding layer is also a first N contact layer 2, the optical waveguide core layer is also a second N contact layer 3 (and 3a and 3b), the optical matching layer is also a sub-electron collecting layer 4, the electron collecting layer 9, the first spacing layer is also a cliff layer or cliff layer (the material is the same as the electron collecting layer) 10, the second spacing layer (the material has a gradually-changed band gap), the third spacing layer (the material is the same as the light absorbing layer) 12, the light absorbing layer 13, the electron blocking layer 14, the P-type contact layer 15, and the metal electrodes 6 manufactured on the metal electrodes 5a and 5b of the N contact layer and the P contact layer.
In the embodiment in which the buffer layer has a thickness of 500nm, the real part of the refractive index of the material used from the buffer layer to the light absorbing layer tends to increase in order to allow light to escape from the optical waveguide into the absorbing layer, and the crystal lattice of all the semiconductor materials is matched to the substrate.
The lower cladding layer of the optical waveguide is also the material corresponding to the first N contact layer 2, the forbidden band width is about 1.18eV, the thickness is 1 μm, the doping type is donor type or N type, and the doping concentration is 1 x 1019Atom/cm3。
The optical waveguide core layer is also a material corresponding to the second N contact layer 3, the forbidden band width of the material is about 1.0eV, the thickness of the material is 1.8 μm, the doping type is donor type or N type, and the doping concentration is 5 multiplied by 1018Atom/cm3(ii) a The geometry of the light-incident end of the light waveguide in the light-incident direction is rectangular in the example.
The optical matching layer is also a sub-collection layer 4, the corresponding material forbidden band width is about 1.0eV, the thickness is 0.3 μm, the doping type is donor type or n type, and the doping concentration is 5 multiplied by 1017Atom/cm3。
The electron collecting layer 9 has a corresponding material forbidden band width of about 0.9eV, a thickness of 0.4 μm, a doping type of donor type or n type, and a doping concentration of 1 × 1017Atom/cm3Linearly graded to about 1 × 10 near one end of the optical matching layer14Atom/cm3Near one end of the first spacer layer.
The first spacer layer 10 is also a cliff layer or cliff layer, and has a material forbidden band width of about 0.9eV and a thickness of 0.01 μmAbout m, the doping type is donor type or n type, and the doping concentration is 1.5 multiplied by 1018Atom/cm3。
The second spacer layer 11 is made of a component band gap linear or gradient material matched with the substrate in a lattice manner, the corresponding forbidden band width is changed from the linear or gradient mode of 0.9eV close to one end of the first spacer layer to the linear or gradient mode of 0.75eV close to one end of the third spacer layer, the thickness is 0.013 mu m, the doping type is donor type or n type, and the doping concentration is not higher than 5 multiplied by 1015Atom/cm3(ii) a If the epitaxial growth of the linear gradient material is difficult, gradient is adopted.
The third spacer layer 12 has a corresponding material forbidden band width of about 0.75eV, a thickness of 0.01 μm, a doping type of acceptor type or p type, and a doping concentration of 1.5 × 1018Atom/cm3。
The light absorption layer 13 has a material forbidden band width of about 0.75eV, a thickness of 0.35 μm, a doping type of acceptor type or p type, and a doping concentration of 3 × 1017Atom/cm3The linear change is about 8 x 10 near one end of the third spacer layer18Atom/cm3Near one end of the electron blocking layer.
The electron blocking layer 14 has a corresponding material forbidden band width of about 0.9eV, a thickness of 0.02 μm, a doping type of acceptor type or p type, and a doping concentration of 3 × 1019Atom/cm3。
The P contact layer 15 has a material forbidden band width of about 0.75eV, a thickness of 0.05 μm, a doping type of acceptor type or P type, and a doping concentration of 2 × 1019Atom/cm3。
Wherein the dimension of the optical waveguide core layer 3 in the vertical light incidence direction corresponding to the portion constituting the photosensitive mesa is the same as that of the light absorption layer, mesas respectively composed of second N contact layers 3a and 3b are present on the left and right sides of the photosensitive mesa, the distance L6 between the mesa and the photosensitive mesa is 4 μm, and N contact metal electrodes having a width of about 7 μm and a thickness of 0.5 μm are deposited in the region outside 5 of about 2 μmL from both sides of the photosensitive mesa; a mesa 7 composed of an optical waveguide lower cladding layer, an optical waveguide core layer, an optical matching layer and an electron collecting layer is formed at the end of the optical waveguide along the light incidence direction, and the mesa 7 is arranged between the N contact mesasIs about 2 μm, and the deposition area on the mesa is 3X 12 μm in the range of 1 μm to 4 μm from the N contact mesa2And the metal film with the thickness of 0.5 mu m and the N contact electrode can be completed by the same metal deposition process.
The dimension L3 of the photosensitive mesa in the direction parallel to the incident light was 25 μm, the dimension L8 of the photosensitive mesa in the direction perpendicular to the incident light was 4 μm, the dimension L2 of the light matching layer in the direction parallel to the incident light was 7 μm longer than that of the electron collecting layer, and the length L1 of the incident end of the optical waveguide was 20 μm.
The above examples are to be construed as merely illustrative and not limitative of the remainder of the disclosure. After reading the description of the invention, the skilled person can make various changes or modifications to the invention, and these equivalent changes and modifications also fall into the scope of the invention defined by the claims.
Claims (8)
1. A low-power waveguide photodetector with optical isolation between a photosensitive table top and an N contact table top is characterized in that the photosensitive table top and the N contact table top are subjected to optical isolation and a metal film is deposited to serve as a light reflector, a table top is manufactured at the tail end of an optical waveguide and an upper metal film is deposited to serve as a light reflector, the low-power waveguide photodetector comprises a semi-insulating substrate and a buffer layer, an optical waveguide lower cladding layer, an optical waveguide core layer, an optical matching layer, an electron collecting layer, a first spacing layer, a second spacing layer, a third spacing layer, a light absorbing layer, an electron blocking layer, a P-type contact layer, an N metal electrode manufactured on the N contact layer and a P metal electrode manufactured on the P contact layer are sequentially arranged on the semi-insulating substrate and the buffer layer, the N contact layer comprises a first N contact layer and a second N contact layer, the N contact layer is provided with the N contact, the optical waveguide core layer is a second N contact layer, the optical matching layer is a sub-electron collecting layer, the first spacing layer is a cliff layer, and the second spacing layer is a gradient band gap gradient layer; the semi-insulating substrate and the buffer layer are respectively used as a substrate of a device and for improving the quality of epitaxial materials, the optical waveguide lower cladding layer is used for preventing light energy from leaking to the substrate, the optical waveguide core layer is used as a guide layer of an optical signal, the optical matching layer is used for guiding light to disappear towards the light absorption layer, the electronic collection layer is used for electronic transportation and regulating and controlling the capacitance of the device, the first spacing layer is used for improving the potential barrier of the spacing layer area, the second spacing layer is used for smoothing a conduction band, the third spacing layer is used for improving the potential barrier of the spacing layer area, the light absorption layer is used for completing conversion from light to electricity, the electronic barrier layer is used for preventing electrons from diffusing to.
2. The waveguide photodetector of claim 1, wherein the semi-insulating substrate and the buffer layer are made of the same material; the real part of the refractive index of the material used in the epitaxial layers from the buffer layer on the semi-insulating substrate side to the light absorbing layer tends to increase in order to allow light to escape from the optical waveguide into the absorbing layer.
3. The waveguide photodetector of claim 1, wherein the optical waveguide lower cladding layer has a thickness of 0.5 μm to 2 μm, a doping type of donor type, and a doping concentration of 5 x 1018Atom/cm3To 1X 1019Atom/cm3To (c) to (d); the optical waveguide core layer has a thickness of 1-3 μm, a doping type of donor type and a doping concentration of 2 × 1018Atom/cm3To 5X 1018Atom/cm3To (c) to (d); in order to improve the light coupling efficiency, the geometric shape of the light incident end of the optical waveguide in the light incident direction is other than a rectangle.
4. The waveguide photodetector of claim 1, wherein the optical matching layer has a thickness of 0.2 μm to 0.6 μm, a doping type of donor type, and a doping concentration of 5 x 1017Atom/cm3To 1X 1018Atom/cm3To (c) to (d); the electron collecting layer has a thickness of 0.1-1 μm, a doping type of donor type, and a doping concentration of 1 × 10 from one end of the light matching layer17Personal sourceSeed/cm3Linearly graded to 1 × 10 near one end of the first spacer layer14Atom/cm3。
5. The waveguide photodetector of claim 1, wherein the first spacer layer has a thickness of 0.01 μm, a doping type of donor type and a doping concentration of 1.5 x 1018Atom/cm3(ii) a The second spacer layer is made of linear or gradient material with composition matched with the substrate lattice, and its work function is changed from the linear or gradient work function equal to that of the first spacer layer to that of the third spacer layer, its thickness is 0.011 micrometers-0.018 micrometers, its doping type is donor type or n type, and its doping concentration is not higher than 5X 1015Atom/cm3(ii) a If the epitaxial growth of the linear gradient material is difficult, gradient is adopted; the third spacer layer has a thickness of 0.01 μm, a doping type of acceptor type or p type, and a doping concentration of 1.5 × 1018Atom/cm3。
6. The waveguide photodetector of claim 1, wherein the light absorption layer has a thickness of 0.05 μm to 1.2 μm, the doping type is acceptor type, and the doping concentration is 3 × 10 from the end near the third spacer layer17Atom/cm3Linearly changed to 8X 10 near one end of the electron blocking layer18Atom/cm3(ii) a The thickness of the electron barrier layer is between 0.015 and 0.1 μm, the doping type is acceptor type, and the doping concentration is 1 × 1019Atom/cm3To 3X 1019Atom/cm3To (c) to (d); the thickness of the P contact layer is 0.05 μm, the doping type is acceptor type, and the doping concentration is 2 × 1019Atom/cm3To 5X 1019Atom/cm3In the meantime.
7. A low power waveguide photodetector having optical isolation between a photosensitive mesa and an N-contact mesa as claimed in claim 1 corresponding to the one forming the photosensitive mesaThe size of part of the optical waveguide core layer in the vertical light incidence direction is the same as that of the light absorption layer, mesas formed by the optical waveguide core layer exist on the left side and the right side of the photosensitive mesa, the distance between the mesas and the photosensitive mesa is 3-5 mu m, and N contact metal electrodes with the width of 7 mu m and the thickness of 0.5 mu m are deposited in the region which is about 1-3 mu m away from the two sides of the photosensitive mesa; in the light incidence direction, the end of the optical waveguide is provided with a mesa composed of an optical waveguide lower cladding layer, an optical waveguide core layer, an optical matching layer and an electron collecting layer, the distance between the mesa and the N contact mesa is 1-2 μm, and the deposition area on the mesa is 3 × 12 μm within the range of 1-4 μm from the N contact mesa2And the metal film with the thickness of 0.5 mu m and the N contact electrode can be completed by the same metal deposition process.
8. The waveguide photodetector of claim 7, wherein the size of the photosensitive mesa in the direction parallel to the incident light is between 0.5 μm and 200 μm, the size of the photosensitive mesa in the direction perpendicular to the incident light is between 1 μm and 20 μm, the size of the optical matching layer in the direction parallel to the incident light is between 2 μm and 9 μm longer than that of the electron collecting layer, and the length of the incident end of the optical waveguide is between 3 μm and 30 μm.
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