CN110896112A - Waveguide integrated GeSn photoelectric detector and manufacturing method thereof - Google Patents
Waveguide integrated GeSn photoelectric detector and manufacturing method thereof Download PDFInfo
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- 229910005898 GeSn Inorganic materials 0.000 title claims abstract description 143
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- 239000000758 substrate Substances 0.000 claims abstract description 110
- 230000003287 optical effect Effects 0.000 claims abstract description 71
- 238000010521 absorption reaction Methods 0.000 claims abstract description 41
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- 238000000034 method Methods 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 12
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a waveguide integrated GeSn photoelectric detector and a manufacturing method thereof. The GeSn photoelectric detector integrated by the waveguide comprises a GeSnOI substrate, and an optical fiber-waveguide spot coupler, an SiN optical waveguide and a device structure which are all positioned on the surface of the GeSnOI substrate; the device structure comprises a GeSn absorption layer arranged on the GeSnOI substrate along the axial direction of the GeSnOI substrate; the output end of the SiN optical waveguide is connected with the center of the GeSn absorption layer in an alignment mode along the direction parallel to the GeSnOI substrate; the optical fiber-waveguide speckle coupler comprises an SiN reverse tapered waveguide connected with the input end of the SiN optical waveguide, and the SiN reverse tapered waveguide and the SiN optical waveguide are arranged on the same layer. The invention can effectively avoid the problem of mutual restriction between the speed and the quantum efficiency of the photodetector, and improves the sensitivity and the stability of the GeSn photodetector.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a waveguide integrated GeSn photoelectric detector and a manufacturing method thereof.
Background
GeSn is a novel IV main group material, the band gap of the GeSn is reduced along with the increase of Sn components, and the GeSn has a large absorption coefficient in a short wave infrared to middle infrared wave band, so that the GeSn is an ideal material for preparing an infrared photoelectric detector. The preparation process of the GeSn photoelectric detector is compatible with the Si-based CMOS process, has the potential advantages of small volume, easy integration, low cost, high performance and the like, and has wide application prospect in the fields of optical communication and optical sensing. In recent years, GeSn infrared photodetectors have been extensively studied. The author Wei Du et al published therein entitled "Silicon-based Ge0.89Sn0.11A surface-receiving GeSn photodetector is disclosed in the article of photodetector and lighting detectors facing mid-associated applications, wherein a GeSn alloy with 11% Sn component content is used as an absorption layer, and the photoresponse range of the GeSn photodetector extends to a 3 mu m wave band.
However, the photodetection efficiency of the surface-receiving silicon-based photodetector is mutually restricted with the response efficiency of the device in terms of the performance of the surface-receiving silicon-based photodetector. The adoption of a thick depletion layer structure is beneficial to improving the photoelectric detection efficiency of the device, but can reduce the response efficiency of the device; reducing the thickness of the depletion layer, in turn, reduces its photodetection efficiency. From the viewpoint of chip integration, the surface-receiving silicon-based photoelectric detector can meet the requirements of photon detection of free space or optical fiber, but the whole optical path is complex in construction, large in size and poor in stability.
Therefore, how to improve the sensitivity and stability of the GeSn photodetector is a technical problem to be solved urgently at present.
Disclosure of Invention
The invention provides a waveguide integrated GeSn photoelectric detector and a manufacturing method thereof, which are used for solving the problems of low sensitivity and poor stability of the existing GeSn.
In order to solve the problems, the invention provides a waveguide integrated GeSn photoelectric detector which comprises a GeSnOI substrate, an optical fiber-waveguide spot coupler, an SiN optical waveguide and a device structure, wherein the optical fiber-waveguide spot coupler, the SiN optical waveguide and the device structure are all positioned on the surface of the GeSnOI substrate;
the device structure comprises a GeSn absorption layer arranged on the GeSnOI substrate along the axial direction of the GeSnOI substrate;
the output end of the SiN optical waveguide is connected with the center of the GeSn absorption layer in an alignment mode along the direction parallel to the GeSnOI substrate;
the optical fiber-waveguide speckle coupler comprises an SiN reverse tapered waveguide connected with the input end of the SiN optical waveguide, and the SiN reverse tapered waveguide and the SiN optical waveguide are arranged on the same layer.
Preferably, the GeSnOI substrate comprises a bottom layer of silicon, a buried oxide layer and a top layer of GeSn which are sequentially stacked along the axial direction of the GeSnOI substrate; the device structure includes:
the lower contact layer is composed of the top GeSn layer;
the upper contact layer is stacked and arranged on the surface of the GeSn absorption layer along the direction vertical to the GeSnOI substrate;
the first electrode is positioned on the surface of the lower contact layer;
and the second electrode is positioned on the surface of the upper contact layer.
Preferably, the lower contact layer is a first type ion-doped GeSn layer, and the upper contact layer is a second type ion-doped GeSn layer.
Preferably, the lower contact layer, the GeSn absorption layer and the upper contact layer together form a diode structure; a thickness of the SiN optical waveguide is equal to a total thickness of the diode structure in an axial direction along the GeSnOI substrate.
Preferably, the GeSn absorbing layer is made of Ge1-xSnxA material composition of, wherein 0<x<0.4。
In order to solve the above problems, the present invention further provides a method for manufacturing a waveguide integrated GeSn photodetector, including the following steps:
forming a GeSnOI substrate;
forming a device structure on the GeSnOI substrate surface, wherein the device structure comprises a GeSn absorption layer arranged on the GeSnOI substrate along the axial direction of the GeSnOI substrate;
forming an SiN optical waveguide on the surface of the GeSnOI substrate, wherein the output end of the SiN optical waveguide is connected with the center of the GeSn absorption layer in an alignment mode along the direction parallel to the GeSnOI substrate;
and forming an optical fiber-waveguide speckle coupler on the surface of the GeSnOI substrate, wherein the optical fiber-waveguide speckle coupler comprises an SiN reverse tapered waveguide connected with the input end of the SiN optical waveguide, and the SiN reverse tapered waveguide and the SiN optical waveguide are arranged on the same layer.
Preferably, the step of forming the GeSnOI substrate includes:
providing a first Si substrate, wherein the first Si substrate is provided with a Ge buffer layer and a first GeSn material layer which are sequentially stacked along the axial direction of the first Si substrate;
deposition of SiO2Forming a first bonding layer on the surface of the GeSn material layer;
providing a second Si substrate;
deposition of SiO2Forming a second bonding layer on the surface of the second Si substrate;
bonding the first Si substrate and the second Si substrate in the direction of the first bonding layer towards the second bonding layer to form a bonded structure;
and removing the first Si substrate and the Ge buffer layer in the bonded structure to form the GeSnOI substrate, wherein the second Si substrate forms the bottom silicon of the GeSnOI substrate, the first bonded layer and the second bonded layer after bonding form the buried oxide layer of the GeSnOI substrate, and the first GeSn material layer forms the top GeSn layer of the GeSnOI substrate.
Preferably, the step of forming the device structure on the surface of the GeSnOI substrate includes:
forming an upper contact layer from the top GeSn layer;
epitaxially growing a second GeSn material on the surface of the upper contact layer to form a GeSn absorption layer;
and epitaxially growing a third GeSn material on the surface of the GeSn absorption layer to form a lower contact layer.
Preferably, the specific steps of forming the SiN optical waveguide on the surface of the GeSnOI substrate and forming the optical fiber-waveguide spot coupler on the surface of the GeSnOI substrate include:
etching the top GeSn layer to expose the buried oxide layer;
depositing a SiN material on the exposed surface of the buried oxide layer to form a SiN layer;
and etching the SiN layer, and simultaneously forming the SiN waveguide and the SiN inverse tapered waveguide in the fiber-waveguide speckle coupler.
Preferably, the SiN layer has a thickness equal to a total thickness of a diode structure jointly constituted by the upper contact layer, the GeSn absorption layer and the lower contact layer in an axial direction along the GeSnOI substrate.
The waveguide integrated GeSn photoelectric detector and the manufacturing method thereof provided by the invention have the following advantages in three aspects: firstly, compared with the traditional infrared photoelectric detector made of III-V group or II-VI group materials, the invention adopts the IV group GeSn material as the absorption layer, and can be compatible with the existing Si-based CMOS process; secondly, compared with the traditional vertical incidence type GeSn photoelectric detector, the GeSn photoelectric detector integrated by the waveguide provided by the invention can effectively avoid the problem of mutual restriction between the speed and the quantum efficiency of the photoelectric detector, improves the sensitivity and the stability of the GeSn photoelectric detector, and is easy to integrate with other passive optical devices; third, the SiN waveguide has very low transmission loss in the near-infrared and even mid-infrared bands and can achieve low-loss coupling with the optical fiber.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a waveguide-integrated GeSn photodetector according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a device structure in accordance with an embodiment of the present invention;
FIG. 3 is a flow chart of a method for fabricating a waveguide integrated GeSn photodetector in accordance with an embodiment of the present invention;
fig. 4A-4H are schematic diagrams of main process structures of a waveguide integrated GeSn photodetector in the manufacturing process according to the embodiment of the present invention.
Detailed Description
The following describes in detail specific embodiments of the waveguide integrated GeSn photodetector and the method for manufacturing the same according to the present invention with reference to the accompanying drawings.
The present embodiment provides a waveguide integrated GeSn photodetector, where fig. 1 is a schematic diagram of an overall structure of the waveguide integrated GeSn photodetector according to the present embodiment, and fig. 2 is a schematic cross-sectional diagram of a device structure according to the present embodiment.
As shown in fig. 1 and fig. 2, the waveguide integrated GeSn photodetector provided in this embodiment includes a GeSnOI substrate, and an optical fiber-waveguide spot coupler, an SiN optical waveguide 12 and a device structure, all of which are located on the surface of the GeSnOI substrate; the device structure comprises a GeSn absorption layer 15 arranged on the GeSnOI substrate along the axial direction of the GeSnOI substrate; the output end of the SiN optical waveguide 12 is connected in alignment with the center of the GeSn absorption layer 15 in a direction parallel to the GeSnOI substrate; the fiber-waveguide speckle coupler comprises a SiN inverse tapered waveguide 13 connected with the input end of the SiN optical waveguide 12, and the SiN inverse tapered waveguide 13 and the SiN optical waveguide 12 are arranged on the same layer.
Specifically, the width of the SiN inversely tapered waveguide 13 gradually increases in a direction along the SiN inversely tapered waveguide 13 toward the SiN optical waveguide 12. That is, the SiN inverse tapered waveguide 13 includes a first end and a second end that are distributed oppositely, the width of the first end is smaller than that of the second end, the second end is connected to the SiN optical waveguide 12, and an optical signal is transmitted in the SiN inverse tapered waveguide 13 along a direction that the first end points to the second end. An optical signal enters the SiN optical waveguide 12 from the SiN inverse tapered waveguide 13 in the fiber-waveguide speckle coupler, is transmitted and output through the SiN optical waveguide 12, and is transversely transmitted in the GeSn absorption layer 15 of the device structure and absorbed to generate a photon-generated carrier, so that a photocurrent is formed. Wherein the lateral propagation refers to propagation in a direction parallel to the GeSnOI substrate.
The waveguide-integrated GeSn photodetector provided in this embodiment may use a waveguide structure device to replace a free space or an optical path of an optical fiber, and perform monolithic integration with a silicon-based diode detector, thereby implementing photoelectric conversion of light output by a waveguide in a detector depletion layer. Because light is transmitted parallel to the junction surface in the structure, the thickness and the area of the absorption layer can be obviously reduced under the condition of keeping high photoelectric conversion efficiency, the response speed of the GeSn photoelectric detector can be improved, and the dark current can be reduced. Furthermore, waveguide-integrated GeSn photodetectors also have the potential to integrate with CMOS integrated circuits. Meanwhile, the SiN material has extremely low transmission loss in near infrared and even mid-infrared bands, and can realize low-loss coupling with optical fibers. Therefore, adopt SiN optical waveguide 12 and SiN anti-cone waveguide 13 carries out signal transmission, SiN optical waveguide 12 with GeSn absorbed layer 15 carries out low coupling loss integration, and the optical signal is in horizontal transmission is absorbed in the GeSn absorbed layer 15, is favorable to overcoming the unfavorable design in the thick absorbed area of the silica-based GeSn photoelectric detector of face receiving type, can realize low operating voltage and faster response rate on the basis of maintaining high photoelectric conversion efficiency, has better sensitivity and stability than current GeSn detector, has extensive application prospect in fields such as military affairs, biosensing, communication.
In order to further improve the response rate of the device structure, preferably, the GeSnOI substrate comprises a bottom layer silicon 10, a buried oxide layer 11 and a top layer GeSn, which are sequentially stacked along the axial direction of the GeSnOI substrate; the device structure includes: a lower contact layer 14 composed of the top GeSn layer; an upper contact layer 16, which is arranged on the surface of the GeSn absorption layer 15 in a stacking way along the direction vertical to the GeSnOI substrate; a first electrode 17 positioned on the surface of the lower contact layer 14; and a second electrode 18 positioned on the surface of the upper contact layer 16.
Preferably, the lower contact layer 14 is a first type ion-doped GeSn layer, and the upper contact layer 16 is a second type ion-doped GeSn layer. Wherein the first type of ions are n-type ions or p-type ions, and correspondingly, the second type of ions are p-type ions or n-type ions.
In order to further improve the coupling efficiency of the optical signal, it is preferable that the lower contact layer 14, the GeSn absorption layer 15, and the upper contact layer 16 together form a diode structure; the thickness of the SiN optical waveguide 12 is equal to the total thickness of the diode structure in the axial direction along the GeSnOI substrate.
Specifically, the lower contact layer 14, the GeSn absorption layer 15, and the upper contact layer 16 are all made of GeSn materials, and the thickness of the SiN optical waveguide 12 is equal to the total thickness of the GeSn materials in the device structure. The content (mole fraction) of the Sn component in the GeSn materials constituting the lower contact layer 14, the GeSn absorption layer 15, and the upper contact layer 16 may be the same or different.
The relative content of the Ge component and the Sn component in the GeSn absorption layer 15 can be adjusted by those skilled in the art according to actual needs. In the GeSn absorption layer 15, as the Sn component increases, the band gap of the GeSn alloy decreases, and the detection range is expanded. Therefore, in order to obtain a larger detection range, it is preferable that the GeSn absorption layer is made of Ge1-xSnxA material composition of, wherein 0<x<0.4。
Furthermore, the present embodiment further provides a method for manufacturing a waveguide integrated GeSn photodetector, fig. 3 is a flowchart of a method for manufacturing a waveguide integrated GeSn photodetector according to the present embodiment, and fig. 4A to 4H are schematic diagrams of main process structures of a waveguide integrated GeSn photodetector according to the present embodiment in a manufacturing process. As shown in fig. 3 and fig. 4A to 4H, the method for manufacturing a waveguide integrated GeSn photodetector according to this embodiment includes the following steps:
step S31, a GeSnOI substrate is formed, as shown in fig. 4D. The GeSnOI substrate comprises a bottom layer silicon 10, a buried oxide layer 11 and a top layer GeSn layer 141 which are sequentially stacked along the axial direction of the GeSnOI substrate.
Preferably, the step of forming the GeSnOI substrate includes:
(S31-1) providing a first Si substrate 40, the first Si substrate 40 having a Ge buffer layer 41 and a first GeSn material layer 42 stacked in this order along an axial direction thereof. The Ge buffer layer 41 and the first GeSn material layer 42 may be sequentially grown on the first Si substrate 40 by an epitaxial growth technique.
(S31-2) deposition of SiO2A first bonding layer 43 is formed on the surface of the GeSn material layer 42, as shown in fig. 4A.
(S31-3) the second Si substrate 45 is provided.
(S31-4) depositing SiO2And forming a second bonding layer 44 on the surface of the second Si substrate 45, as shown in fig. 4B.
(S31-5) bonding the first Si substrate 40 and the second Si substrate 45 in a direction in which the first bonding layer 43 faces the second bonding layer 44, forming a bonded structure, as shown in fig. 4C.
(S31-6) removing the first Si substrate 40 and the Ge buffer layer 41 in the bonded structure to form the GeSnOI substrate, the second Si substrate 45 constituting the bottom silicon 10 of the GeSnOI substrate, the buried oxide layer 11 of the GeSnOI substrate constituted by the first and second bonded layers after bonding, and the top GeSn layer 141 of the GeSnOI substrate constituted by the first GeSn material layer, as shown in fig. 4D. Specifically, the first Si substrate 40 and the Ge buffer layer 41 on the back side of the bonding structure may be etched away by a selective etching technique.
Step S32, forming a device structure on the surface of the GeSnOI substrate, where the device structure includes a GeSn absorption layer 15 disposed on the GeSnOI substrate along the axial direction of the GeSnOI substrate, as shown in fig. 4F.
In order to simplify the step of forming the device structure, preferably, the step of forming the device structure on the surface of the GeSnOI substrate includes:
(S32-1) forming a lower contact layer 14 from the top GeSn layer 141;
(S32-2) epitaxially growing a second GeSn material on the surface of the lower contact layer 14 to form a GeSn absorption layer 15;
(S32-3) epitaxially growing a third GeSn material on the surface of the GeSn absorption layer 15 to form an upper contact layer 16.
The first GeSn material layer 42, the second GeSn material, and the third GeSn material may have the same or different Sn component contents. Preferably, the content of the Sn component in the GeSn absorbing layer 15 is greater than 0 and less than 40%.
Step S33, forming an SiN optical waveguide 12 on the surface of the GeSnOI substrate, wherein the output end of the SiN optical waveguide 12 is aligned and connected with the center of the GeSn absorption layer 15 along the direction parallel to the GeSnOI substrate.
Step S34, forming an optical fiber-waveguide speckle coupler on the surface of the GeSnOI substrate, where the optical fiber-waveguide speckle coupler includes an SiN inversely tapered waveguide 13 connected to the input end of the SiN optical waveguide 12, and the SiN inversely tapered waveguide 13 and the SiN optical waveguide 12 are disposed on the same layer, as shown in fig. 4G.
In order to further simplify the process steps, preferably, the specific steps of forming the SiN optical waveguide 12 on the surface of the GeSnOI substrate and forming the fiber-waveguide spot coupler on the surface of the GeSnOI substrate include:
(1) etching the top GeSn layer 141 to expose the buried oxide layer 11;
(2) depositing a SiN material on the exposed surface of the buried oxide layer 11 to form a SiN layer;
(3) and etching the SiN layer, and simultaneously forming the SiN waveguide 12 and the SiN inverse tapered waveguide 13 in the fiber-waveguide mode spot coupler.
Specifically, first type ions are implanted into the top GeSn layer 141 and annealing is performed to obtain the first type charge layer 142; then, a second GeSn material layer 151 and a third GeSn material layer are epitaxially grown on the surface of the first type charge layer 142 in sequence, and second type ion implantation is performed on the third GeSn material layer to form a second type charge layer 161, as shown in fig. 4E; next, a GeSn photodetector mesa is formed by photolithography and dry etching processes, and an absorption region and a lower contact region are defined by photolithography and dry etching methods, so as to form a diode structure composed of the lower contact layer 14, the GeSn absorption layer 15, and the upper contact layer 16. After the preparation of the diode structure is completed, the SiN layer is deposited on the exposed surface of the buried oxide layer 11, and the SiN optical waveguide 12 and the SiN inverse tapered waveguide 13 are simultaneously formed by photolithography and etching of the SiN layer. In other embodiments, the lower contact layer 14 and the upper contact layer 16 may be formed by doping ions in an in-situ doping manner, so as to avoid damage to the device structure by means of ion implantation.
Preferably, the thickness of the SiN layer is equal to the total thickness of the diode structure jointly constituted by the lower contact layer 14, the GeSn absorption layer 15 and the upper contact layer 16 in the axial direction of the GeSnOI substrate.
After the SiN optical waveguide 12 and the SiN inverse tapered waveguide 13 are manufactured, the method further includes the following steps: deposition of SiO2The protective layer is arranged on the diode structure, the surface of the SiN optical waveguide 12 and the surface of the SiN reverse tapered waveguide 13; by photoetching and etching process on the SiO2Defining a metal contact area in the protective layer; finally, a metal electrode is deposited on the metal contact area, and a first electrode 17 and a second electrode 18 are formed by photolithography and etching, as shown in fig. 4H.
The waveguide integrated GeSn photodetector and the manufacturing method thereof provided by the embodiment have the following advantages in three aspects: firstly, compared with the traditional infrared photoelectric detector made of III-V group or II-VI group materials, the invention adopts the IV group GeSn material as the absorption layer, and can be compatible with the existing Si-based CMOS process; secondly, compared with the traditional vertical incidence type GeSn photoelectric detector, the GeSn photoelectric detector integrated by the waveguide provided by the invention can effectively avoid the problem of mutual restriction between the speed and the quantum efficiency of the photoelectric detector, improves the sensitivity and the stability of the GeSn photoelectric detector, and is easy to integrate with other passive optical devices; third, the SiN waveguide has very low transmission loss in the near-infrared and even mid-infrared bands and can achieve low-loss coupling with the optical fiber.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A GeSn photoelectric detector integrated with a waveguide is characterized by comprising a GeSnOI substrate, and an optical fiber-waveguide spot coupler, an SiN optical waveguide and a device structure which are all positioned on the surface of the GeSnOI substrate;
the device structure comprises a GeSn absorption layer arranged on the GeSnOI substrate along the axial direction of the GeSnOI substrate;
the output end of the SiN optical waveguide is connected with the center of the GeSn absorption layer in an alignment mode along the direction parallel to the GeSnOI substrate;
the optical fiber-waveguide speckle coupler comprises an SiN reverse tapered waveguide connected with the input end of the SiN optical waveguide, and the SiN reverse tapered waveguide and the SiN optical waveguide are arranged on the same layer.
2. The waveguide integrated GeSn photodetector of claim 1, wherein the GeSnOI substrate comprises a bottom layer of silicon, a buried oxide layer, and a top layer of GeSn sequentially stacked along an axial direction thereof; the device structure includes:
the lower contact layer is composed of the top GeSn layer;
the upper contact layer is stacked and arranged on the surface of the GeSn absorption layer along the direction vertical to the GeSnOI substrate;
the first electrode is positioned on the surface of the lower contact layer;
and the second electrode is positioned on the surface of the upper contact layer.
3. The waveguide integrated GeSn photodetector of claim 2, wherein the lower contact layer is a first type ion doped GeSn layer and the upper contact layer is a second type ion doped GeSn layer.
4. The waveguide integrated GeSn photodetector of claim 3, wherein the lower contact layer, the GeSn absorbing layer, and the upper contact layer together form a diode structure; a thickness of the SiN optical waveguide is equal to a total thickness of the diode structure in an axial direction along the GeSnOI substrate.
5. The waveguide integrated GeSn photodetector of claim 1, wherein the GeSn absorbing layer is formed of Ge1-xSnxA material composition of, wherein 0<x<0.4。
6. A manufacturing method of a GeSn photoelectric detector integrated by a waveguide is characterized by comprising the following steps: forming a GeSnOI substrate;
forming a device structure on the GeSnOI substrate surface, wherein the device structure comprises a GeSn absorption layer arranged on the GeSnOI substrate along the axial direction of the GeSnOI substrate;
forming an SiN optical waveguide on the surface of the GeSnOI substrate, wherein the output end of the SiN optical waveguide is connected with the center of the GeSn absorption layer in an alignment mode along the direction parallel to the GeSnOI substrate;
and forming an optical fiber-waveguide speckle coupler on the surface of the GeSnOI substrate, wherein the optical fiber-waveguide speckle coupler comprises an SiN reverse tapered waveguide connected with the input end of the SiN optical waveguide, and the SiN reverse tapered waveguide and the SiN optical waveguide are arranged on the same layer.
7. The method of claim 6, wherein the step of forming the GeSnOI substrate comprises:
providing a first Si substrate, wherein the first Si substrate is provided with a Ge buffer layer and a first GeSn material layer which are sequentially stacked along the axial direction of the first Si substrate;
deposition of SiO2Forming a first bonding layer on the surface of the GeSn material layer;
providing a second Si substrate;
deposition of SiO2Forming a second bonding layer on the surface of the second Si substrate;
bonding the first Si substrate and the second Si substrate in the direction of the first bonding layer towards the second bonding layer to form a bonded structure;
and removing the first Si substrate and the Ge buffer layer in the bonded structure to form the GeSnOI substrate, wherein the second Si substrate forms the bottom silicon of the GeSnOI substrate, the first bonded layer and the second bonded layer after bonding form the buried oxide layer of the GeSnOI substrate, and the first GeSn material layer forms the top GeSn layer of the GeSnOI substrate.
8. The method of claim 7, wherein the step of forming a device structure on the GeSnOI substrate surface comprises:
forming an upper contact layer from the top GeSn layer;
epitaxially growing a second GeSn material on the surface of the upper contact layer to form a GeSn absorption layer;
and epitaxially growing a third GeSn material on the surface of the GeSn absorption layer to form a lower contact layer.
9. The method of claim 8, wherein the steps of forming an SiN optical waveguide on the surface of the GeSnOI substrate and forming an optical fiber-waveguide spot coupler on the surface of the GeSnOI substrate comprise:
etching the top GeSn layer to expose the buried oxide layer;
depositing a SiN material on the exposed surface of the buried oxide layer to form a SiN layer;
and etching the SiN layer, and simultaneously forming the SiN waveguide and the SiN inverse tapered waveguide in the fiber-waveguide speckle coupler.
10. The method of claim 9, wherein the SiN layer has a thickness in an axial direction along the GeSnOI substrate equal to a total thickness of a diode structure collectively formed by the upper contact layer, the GeSn absorption layer, and the lower contact layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933753A (en) * | 2020-08-14 | 2020-11-13 | 中国科学院微电子研究所 | Waveguide type photoelectric detector and manufacturing method thereof |
| CN112525232A (en) * | 2020-11-27 | 2021-03-19 | 武汉云岭光电有限公司 | Waveguide detector and preparation method thereof |
| CN113161433A (en) * | 2021-02-08 | 2021-07-23 | 成都多极子科技有限公司 | 100GHz traveling wave vertical direction coupling optical waveguide detector |
| CN114296190A (en) * | 2020-10-08 | 2022-04-08 | 格芯(美国)集成电路科技有限公司 | Photodetector including a coupling region having a plurality of tapers |
| CN114442223A (en) * | 2020-11-02 | 2022-05-06 | 格芯(美国)集成电路科技有限公司 | Multimode optical waveguide structure with isolated absorber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311306A (en) * | 2013-06-26 | 2013-09-18 | 重庆大学 | GeSn channel metal-oxide-semiconductor field-effect transistor with InAlP cover layer |
| CN203241564U (en) * | 2013-05-30 | 2013-10-16 | 青岛海信宽带多媒体技术有限公司 | Optical fiber waveguide spot size converter and optical coupler |
| CN105679875A (en) * | 2016-03-08 | 2016-06-15 | 昆明理工大学 | Waveguide integrated silicon-based single photon detector |
| CN105789347A (en) * | 2016-03-02 | 2016-07-20 | 西安电子科技大学 | GeSn-GeSi material based heterogeneous phototransistor and fabrication method thereof |
| CN107871800A (en) * | 2017-02-24 | 2018-04-03 | 乔丽萍 | N+ GeSn/i GeSn/p+ Ge structure photodetectors and preparation method thereof |
-
2018
- 2018-08-22 CN CN201810958988.0A patent/CN110896112B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203241564U (en) * | 2013-05-30 | 2013-10-16 | 青岛海信宽带多媒体技术有限公司 | Optical fiber waveguide spot size converter and optical coupler |
| CN103311306A (en) * | 2013-06-26 | 2013-09-18 | 重庆大学 | GeSn channel metal-oxide-semiconductor field-effect transistor with InAlP cover layer |
| CN105789347A (en) * | 2016-03-02 | 2016-07-20 | 西安电子科技大学 | GeSn-GeSi material based heterogeneous phototransistor and fabrication method thereof |
| CN105679875A (en) * | 2016-03-08 | 2016-06-15 | 昆明理工大学 | Waveguide integrated silicon-based single photon detector |
| CN107871800A (en) * | 2017-02-24 | 2018-04-03 | 乔丽萍 | N+ GeSn/i GeSn/p+ Ge structure photodetectors and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933753A (en) * | 2020-08-14 | 2020-11-13 | 中国科学院微电子研究所 | Waveguide type photoelectric detector and manufacturing method thereof |
| CN114296190A (en) * | 2020-10-08 | 2022-04-08 | 格芯(美国)集成电路科技有限公司 | Photodetector including a coupling region having a plurality of tapers |
| CN114296190B (en) * | 2020-10-08 | 2023-08-29 | 格芯(美国)集成电路科技有限公司 | Photodetector comprising a coupling region with a plurality of pyramids |
| CN114442223A (en) * | 2020-11-02 | 2022-05-06 | 格芯(美国)集成电路科技有限公司 | Multimode optical waveguide structure with isolated absorber |
| CN112525232A (en) * | 2020-11-27 | 2021-03-19 | 武汉云岭光电有限公司 | Waveguide detector and preparation method thereof |
| CN113161433A (en) * | 2021-02-08 | 2021-07-23 | 成都多极子科技有限公司 | 100GHz traveling wave vertical direction coupling optical waveguide detector |
| CN113161433B (en) * | 2021-02-08 | 2022-08-26 | 成都多极子科技有限公司 | 100GHz traveling wave vertical direction coupling optical waveguide detector |
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