CN210006746U - Waveguide type germanium-based photoelectric detector - Google Patents
Waveguide type germanium-based photoelectric detector Download PDFInfo
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- CN210006746U CN210006746U CN201921180948.4U CN201921180948U CN210006746U CN 210006746 U CN210006746 U CN 210006746U CN 201921180948 U CN201921180948 U CN 201921180948U CN 210006746 U CN210006746 U CN 210006746U
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Abstract
The utility model provides an integrated waveguide type germanium base photoelectric detector of silicon waveguide distributed Bragg reflector, waveguide type germanium base photoelectric detector include germanium base photoelectric detector, silicon waveguide structure, connect in germanium base photoelectric detector's end, silicon waveguide distributed Bragg reflector, connect in germanium base photoelectric detector's second end compare with traditional waveguide type detector, the utility model discloses an introduce silicon waveguide distributed Bragg reflector structure at germanium photoelectric detector rear end, make light get into germanium photoelectric detector once more through the reflection, can realize more efficient light absorption efficiency to can effectively reduce the length of detector, realize low dark current, low electric capacity and high responsivity photoelectric detector preparation.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing and optical communication, and particularly relates to a waveguide type germanium-based photoelectric detector integrated by silicon waveguide distributed Bragg reflectors (DBG) and a preparation method thereof.
Background
The photoelectric detector refers to devices which cause the conductivity of the irradiated material to change due to radiation, has wide application in various fields of military and national economy, is mainly used for ray measurement and detection, industrial automatic control, photometric measurement and the like in a visible light or near infrared band, and is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing and the like in an infrared band.
A silicon-based germanium photoelectric detector is compatible with a CMOS (complementary metal oxide semiconductor) process and convenient to integrate, and has general references in the fields of optical communication, optical interconnection, optical sensing and the like, compared with a surface incidence type detector, the waveguide type detector can avoid the problem of mutual restriction between the speed and the quantum efficiency of the optical detector, can be integrated with a waveguide optical path, is easier to realize high-speed and high-responsivity, is of a core device for realizing high-speed optical communication and optical interconnection chips, is limited by the relatively low absorption coefficient of a germanium material in a C, L communication waveband, and in order to realize high responsivity, the detector must be long enough, so that the capacitance and the dark current of the detector are difficult to optimize steps.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, the present invention provides waveguide bragg reflector integrated waveguide-type ge-based photodetectors and a method for fabricating the same, which are used to solve the problem of low absorption efficiency of waveguide-type ge-based photodetectors in the prior art.
In order to achieve the above and other related objects, the present invention provides waveguide-based ge-based photodetectors integrated with silicon waveguide distributed bragg reflectors, comprising a ge-based photodetector, a silicon waveguide structure connected to the end of the ge-based photodetector, and a silicon waveguide distributed bragg reflector connected to the second end of the ge-based photodetector.
Optionally, the silicon waveguide distributed bragg reflector is implemented by changing a width dimension or/and a height dimension of the silicon waveguide.
Optionally, the incident light of the silicon waveguide structure enters the germanium-based photodetector through direct coupling or evanescent coupling.
Optionally, the reflected light of the silicon waveguide distributed bragg reflector enters the germanium-based photodetector through direct coupling or evanescent coupling.
Optionally, the germanium-based photodetector comprises: a lower contact layer; a germanium-based absorption layer on the lower contact layer; an upper contact layer on the germanium-based absorption layer; and the lower electrode and the upper electrode are respectively positioned on the lower contact layer and the upper contact layer.
Optionally, the lower contact layer has mesa contacts located outside both sides of the germanium-based absorption layer, and the lower electrode is formed on the mesa contacts.
, the germanium-based absorption layer comprises kinds of SiGe, Ge, GeSn and GePb.
The utility model discloses still provide preparation methods of silicon waveguide distributed Bragg reflector integrated waveguide type germanium base photoelectric detector, the preparation method includes step 1), provide SOI substrate, etch out silicon waveguide structure and silicon waveguide distributed Bragg reflector on the top silicon of SOI substrate, step 2), deposit the dielectric layer, and adopt photoetching technology to define germanium base material selectivity epitaxial region in the dielectric layer, advance step etching the top silicon of SOI substrate in order to form germanium base material selectivity epitaxial region, the top silicon bottom of partial thickness is kept to germanium base material selectivity epitaxial region bottom, adopt ion implantation and annealing method to form the lower contact layer in top silicon bottom and the top silicon boss of both sides, step 3), in germanium base material selectivity epitaxial region selectivity epitaxial growth germanium base material layer, adopt ion implantation and annealing method to form the upper contact layer in the germanium base material layer, adopt photoetching method to etch and prepare germanium base absorbing layer in the germanium base material layer, step 4), through photoetching method in upper contact layer and lower contact layer, upper electrode region and lower electrode region are defined and lower electrode region form.
Optionally, the height of the germanium-based material layer is greater than the height of the germanium-based material selective epitaxial region.
Optionally, both ends of the germanium-based material layer selectively epitaxially grown in step 3) are in direct contact with the silicon waveguide structure and the silicon waveguide distributed bragg reflector, respectively.
As described above, the waveguide type germanium-based photodetector integrated with the silicon waveguide distributed bragg reflector and the manufacturing method thereof of the present invention have the following advantages:
compare with traditional waveguide type detector, the utility model discloses an introduce silicon waveguide distributed Bragg reflector structure at germanium photoelectric detector rear end, make light get into germanium photoelectric detector once more through the reflection, can realize more efficient light absorption efficiency to can effectively reduce the length of detector, realize low dark current, low electric capacity and high responsivity photoelectric detector preparation.
Drawings
Fig. 1 to fig. 3 are schematic structural diagrams of a waveguide-type ge-based photodetector integrated with a silicon waveguide distributed bragg reflector according to an embodiment of the present invention, where fig. 2 is a schematic sectional structural diagram of fig. 1 at a-a ', and fig. 3 is a schematic sectional structural diagram of fig. 1 at B-B'.
Fig. 4 is a schematic structural diagram showing steps of a method for manufacturing a waveguide-type ge-based photodetector integrated with a silicon waveguide distributed bragg reflector according to an embodiment of the present invention.
Description of the element reference numerals
10 silicon waveguide structure
20 germanium-based photodetector
201 bottom silicon layer
202 insulating layer
203 top silicon layer
204 germanium-based material selective epitaxial region
205 lower contact layer
206 germanium-based absorption layer
207 upper contact layer
208 lower electrode
209 upper electrode
210 boss contact part
30 silicon waveguide distributed Bragg reflector
301 strip silicon waveguide
302 projection
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
As used in describing the embodiments of the present invention in detail, the cross-sectional views illustrating the device structure are not enlarged partially in scale for convenience of illustration, and are only exemplary and should not limit the scope of the present invention.
For convenience of description, spatial relational terms such as "below," "lower," "below," "above," "upper," and the like may be used herein to describe the relationship of the elements or features shown in the figures to other elements or features.
In the context of this application, structures described as having the th feature "on top of" the second feature may include embodiments where the th and second features are formed in direct contact, and may also include embodiments where additional features are formed between the th and second features, such that the th and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and ratio of each component can be changed freely in in actual implementation, and the layout of the components may be more complicated.
As shown in fig. 1 to fig. 3, fig. 2 is a schematic cross-sectional structure diagram at a-a 'of fig. 1, and fig. 3 is a schematic cross-sectional structure diagram at B-B' of fig. 1, this embodiment provides waveguide-type germanium-based photodetectors 20 integrated with a silicon waveguide distributed bragg reflector 30, where the waveguide-type germanium-based photodetector 20 includes a germanium-based photodetector 20, a silicon waveguide structure 10, and a silicon waveguide distributed bragg reflector 30.
As shown in fig. 2, the ge-based photodetector 20 includes a lower contact layer 205, a ge-based absorption layer 206, an upper contact layer 207, a lower electrode 208, and an upper electrode 209.
In order to further simplify the subsequent electrode manufacturing process, the top silicon bosses on both sides of the top silicon base layer may also be subjected to ion implantation and annealing, and together with the top silicon base layer, the lower contact layer 205 serves as the lower contact layer 205, i.e. the lower contact layer 205 has boss contacts 210 located outside both sides of the germanium base absorption layer 206, and the lower electrode 208 is formed on the boss contacts 210. since the boss contacts 210 are located on the top surface of the SOI substrate, the process difficulty and the process cost may be greatly reduced compared to the electrode manufacturing on the recessed top silicon base layer.
In the present embodiment, the lower contact layer 205 is formed by n-type ion implantation and annealing, the implanted ions may be phosphorus ions, etc., and the lower contact layer 205 is of n-type conductivity.
The germanium-based absorption layer 206 may be epitaxially formed on the lower contact layer 205, and particularly in the above-mentioned germanium-based material selective epitaxial region 204, the material of the germanium-based absorption layer 206 may be selected from of SiGe, Ge, GeSn, and GePb, and the two sides of the germanium-based absorption layer 206 are spaced apart from the mesa contact 210, so as to achieve the insulation and isolation between the germanium-based absorption layer 206 and the mesa contact 210.
The upper contact layer 207, which may be formed on top of the germanium-based absorption layer 206 by ion implantation and annealing; in the present embodiment, the upper contact layer 207 is formed by p-type ion implantation and annealing, the implanted ions may be boron or the like, and the upper contact layer 207 is of p-type conductivity.
The lower electrode 208 and the upper electrode 209 are respectively disposed on the lower contact layer 205 and the upper contact layer 207, and in the embodiment, the lower electrode 208 is formed on the bump contact portion 210. the upper electrode 209 and the upper contact layer 207 may form an ohmic contact through a process such as annealing, and the lower electrode 208 and the lower contact layer 205 form an ohmic contact at the same time, so as to further reduce contact resistance by .
The silicon waveguide structure 10 may be formed by etching the top silicon layer of the SOI substrate, and is connected to the -th end of the germanium-based photodetector 20, and the incident light of the silicon waveguide structure 10 may enter the germanium-based photodetector 20 by direct coupling or evanescent coupling.
The silicon waveguide distributed bragg reflector 30 may be formed by etching top silicon of the SOI substrate, and is connected to the second end of the germanium-based photodetector 20, and reflected light of the silicon waveguide distributed bragg reflector 30 may enter the germanium-based photodetector 20 through direct coupling or evanescent coupling.
As shown in fig. 1, the silicon waveguide dbr 30 may be implemented by varying the width dimension or/and the height dimension of the silicon waveguide. In this embodiment, the silicon waveguide distributed bragg reflector 30 may be implemented by changing a width dimension of the silicon waveguide, specifically, the silicon waveguide distributed bragg reflector 30 includes a strip-shaped silicon waveguide 301 and a protrusion 302 protruding from the strip-shaped silicon waveguide 301 in a pulse transverse direction, and the strip-shaped silicon waveguide 301 and the protrusion 302 may be coated with a material such as silicon dioxide. The silicon waveguide distributed bragg reflector 30 has a high coupling efficiency with the germanium-based photodetector 20, so that a more efficient light absorption efficiency can be achieved.
The utility model discloses an introduce silicon waveguide distributed Bragg reflector 30 structure at germanium photoelectric detector rear end, make light get into germanium photoelectric detector once more through the reflection, can realize more efficient light absorption efficiency to can effectively reduce the length of detector, realize low dark current, low electric capacity and high responsivity photoelectric detector preparation.
As shown in fig. 1 to fig. 4, this embodiment further provides a method for manufacturing waveguide-based ge-based photodetectors 20 integrated by using a silicon waveguide distributed bragg reflector 30, where the method includes the steps of:
as shown in fig. 1 and 4, step 1) S11 is performed first, a SOI substrate is provided, and the silicon waveguide structure 10 and the silicon waveguide distributed bragg reflector 30 are etched on the top silicon of the SOI substrate.
The SOI substrate specifically includes a bottom silicon layer 201, an insulating layer 202, and a top silicon layer 203. The silicon waveguide structure 10 and the silicon waveguide distributed bragg reflector 30 are formed in the top silicon layer 203 through photolithography and etching processes, and the silicon waveguide distributed bragg reflector 30 may be implemented by changing the width dimension or/and the height dimension of the silicon waveguide. In this embodiment, the silicon waveguide distributed bragg reflector 30 may be implemented by changing a width dimension of a silicon waveguide, specifically, the silicon waveguide distributed bragg reflector 30 includes a strip-shaped silicon waveguide 301 and a protrusion 302 protruding from the strip-shaped silicon waveguide 301 in a pulse transverse direction, and the strip-shaped silicon waveguide 301 and the protrusion 302 may be coated with a material such as silicon dioxide in a subsequent process.
As shown in fig. 4, step 2) S12 is then performed, a dielectric layer is deposited, a germanium-based material selective epitaxial region 204 is defined in the dielectric layer by using a photolithography etching process, a top silicon layer of the SOI substrate is etched by a step to form the germanium-based material selective epitaxial region 204, a bottom silicon layer with a partial thickness is reserved at the bottom of the germanium-based material selective epitaxial region 204, and a lower contact layer 205 is formed in the bottom silicon layer and top silicon mesas at two sides of the top silicon layer by using an ion implantation and annealing method, and the bottom silicon layer and the top silicon layer are used as the lower contact layer 205 together, even if the lower contact layer 205 has mesa contacts 210 located outside two sides of the germanium-based material selective epitaxial region 204, and a subsequent lower electrode 208 is formed on the mesa contacts 210.
As shown in fig. 4, step 3) S13 is performed next, a germanium-based material layer is selectively epitaxially grown in the germanium-based material selective epitaxial region 204, two ends of the selectively epitaxially grown germanium-based material layer are directly contacted with the silicon waveguide structure 10 and the silicon waveguide distributed bragg reflector 30, an upper contact layer 207 is formed in the germanium-based material layer by using an ion implantation and annealing method, and a germanium-based absorption layer 206 is etched in the germanium-based material layer by using a photolithography and etching method, so that two sides of the germanium-based absorption layer 206 are spaced from the bump contact 210, thereby achieving the insulation and isolation between the germanium-based absorption layer 206 and the bump contact 210.
In this embodiment, the height of the germanium-based material layer is greater than the height of the germanium-based material selective epitaxial region 204 to ensure that the germanium-based absorption region has a sufficient thickness.
Step 4) S14, depositing a dielectric layer, defining an upper electrode 209 area and a lower electrode 208 area in the upper contact layer 207 and the lower contact layer 205 by photolithography and etching methods, and forming an upper electrode 209 and a lower electrode 208, then forming ohmic contact between the upper electrode 209 and the upper contact layer 207 by annealing and the like, and forming ohmic contact between the lower electrode 208 and the lower contact layer 205, so as to further reduce contact resistance .
Of course, the upper electrode 209 and the lower electrode 208 can also be prepared by a metal stripping process, and are not limited to the examples listed herein.
As described above, the waveguide type ge-based photodetector 20 integrated with the silicon waveguide distributed bragg reflector 30 and the manufacturing method thereof according to the present invention have the following advantages:
compare with traditional waveguide type detector, the utility model discloses an introduce silicon waveguide distributed Bragg reflector structure at germanium photoelectric detector rear end, make light get into germanium photoelectric detector once more through the reflection, can realize more efficient light absorption efficiency to can effectively reduce the length of detector, realize low dark current, low electric capacity and high responsivity photoelectric detector preparation.
Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
It will be appreciated by those skilled in the art that changes in this embodiment may be made without departing from the principles and spirit of the invention, the scope of which is defined by the claims appended hereto, and their equivalents in .
Claims (7)
1, A silicon waveguide distributed Bragg reflector integrated waveguide type germanium-based photodetector, comprising:
a germanium-based photodetector;
a silicon waveguide structure connected to the th end of the germanium-based photodetector;
and the silicon waveguide distributed Bragg reflector is connected to the second end of the germanium-based photoelectric detector.
2. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 1, wherein: the silicon waveguide distributed Bragg reflector is realized by changing the width dimension or/and the height dimension of the silicon waveguide.
3. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 1, wherein: and the incident light of the silicon waveguide structure enters the germanium-based photoelectric detector in a direct coupling or evanescent wave coupling mode.
4. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 1, wherein: and the reflected light of the silicon waveguide distributed Bragg reflector enters the germanium-based photoelectric detector in a direct coupling or evanescent wave coupling mode.
5. The silicon waveguide distributed bragg mirror integrated waveguide-based germanium-based photodetector of claim 1, wherein the germanium-based photodetector comprises:
a lower contact layer;
a germanium-based absorption layer on the lower contact layer;
an upper contact layer on the germanium-based absorption layer;
and the lower electrode and the upper electrode are respectively positioned on the lower contact layer and the upper contact layer.
6. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 5, wherein: the lower contact layer is provided with boss contact parts positioned outside two sides of the germanium-based absorption layer, and the lower electrode is formed on the boss contact parts.
7. The silicon waveguide distributed Bragg reflector integrated waveguide-type germanium-based photodetector of claim 5, wherein the material of the germanium-based absorption layer comprises of SiGe, Ge, GeSn and GePb.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112285826A (en) * | 2020-11-10 | 2021-01-29 | 中国科学院上海微系统与信息技术研究所 | Silicon-based multimode light receiving device and preparation method thereof |
| CN112379479A (en) * | 2020-11-10 | 2021-02-19 | 中国科学院上海微系统与信息技术研究所 | Silicon-based optical transceiver and preparation method thereof |
| CN112531066A (en) * | 2020-12-29 | 2021-03-19 | 武汉邮电科学研究院有限公司 | Photoelectric detector and use method thereof |
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2019
- 2019-07-25 CN CN201921180948.4U patent/CN210006746U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112285826A (en) * | 2020-11-10 | 2021-01-29 | 中国科学院上海微系统与信息技术研究所 | Silicon-based multimode light receiving device and preparation method thereof |
| CN112379479A (en) * | 2020-11-10 | 2021-02-19 | 中国科学院上海微系统与信息技术研究所 | Silicon-based optical transceiver and preparation method thereof |
| CN112285826B (en) * | 2020-11-10 | 2021-12-24 | 中国科学院上海微系统与信息技术研究所 | Silicon-based multimode light receiving device and preparation method thereof |
| CN112531066A (en) * | 2020-12-29 | 2021-03-19 | 武汉邮电科学研究院有限公司 | Photoelectric detector and use method thereof |
| CN112531066B (en) * | 2020-12-29 | 2022-04-01 | 武汉邮电科学研究院有限公司 | Photoelectric detector and use method thereof |
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