CN109273561A - A kind of preparation method of MSM photoelectric detector - Google Patents
A kind of preparation method of MSM photoelectric detector Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 239000012528 membrane Substances 0.000 claims description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 30
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- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 7
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 7
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
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- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
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- 239000007788 liquid Substances 0.000 claims description 3
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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Abstract
The invention discloses a kind of preparation method of MSM photoelectric detector, belong to photodetector technical field, high speed high efficiency MSM photoelectric detector of the present invention the preparation method comprises the following steps: in SOI (Si+SiO2+ Si) semiconductive thin film is prepared on substrate；Interdigital electrode is prepared on semiconductive thin film；Erosion removal SiO2Layer makes device be detached from silicon base；Silicon is sequentially etched at the device back side and semiconductive thin film forms periodical light trapping structure, obtain high speed, high efficiency MSM photoelectric detector, the preparation method in semiconductive thin film by integrating periodicity light trapping structure, while guaranteeing the speed of response of MSM photoelectric detector, the optical detection efficiency of detector is effectively improved, the present invention is for visible light and infrared acquisition and imaging technique.
Description
Technical field
The present invention relates to light-exposed and infrared acquisition and technical field of imaging, and in particular to a kind of system of MSM photoelectric detector
Preparation Method.
Background technique
Photodetector (Photo Detector, PD) is the pass that optical signal is converted in photodetector system and fiber optic communication
Key device.Currently, be continuously improved optical fiber telecommunications system rate the speed of response of photodetector is proposed it is higher and higher
It is required that high-speed photodetector becomes an important research topic.MSM-PD with low (Metal-
Semiconductor-Metal Photo Detector) i.e. MSM-PD due to its high-responsivity, high sensitivity, structure it is simple,
The features such as being easily integrated and is at low cost obtains extensive concern and application.
MSM photoelectric detector, which refers to, forms back-to-back Schottky diode in semiconductor material surface production metal electrode,
It is combined and is formed by photosensitive layer and interdigital electrode.Interdigital electrode is made of two groups of discrete metal strips of semiconductor surface, interdigital electrode
Interval be photosurface.Compared to other type photodetectors such as PIN diode, MSM-PD device mainly includes following several
The advantages of a aspect: (1) extremely low distribution capacity.It is two back-to-back diodes that MSM-PD device is practical, one Zhizheng when work
Partially, another reverse bias, so device junction capacity is smaller, and little with voltage change.MSM-PD is metal-half simultaneously
Conductor structure, not few sub- effect, series resistance is smaller, and distribution capacity is extremely low, and its response speed depends primarily on photoproduction
It is the transition time of carrier between electrodes, little with capacitance characteristic relationship, therefore response device speed is high；(2) minimum dark electricity
Stream.Two metal-semiconductor junctions of Schottky contacts, a positively biased, one reverse-biased, and the schottky junction of reverse bias side exhausts
Area head reduces the tunnelling probability of electrons and holes, therefore the also just corresponding reduction of the dark current of two interpolar of detector, than of the same race
Small 3~5 orders of magnitude of the photodetector dark current of material other structures device；(3) structure is simple, and technique is easy to accomplish.?
After having grown semiconductor material on substrate, it is only necessary to prepare interdigital electricity in semiconductor material surface by a photoetching process
Pole, and it is made to form Schottky contacts with semiconductor material.And entire technical process and metal-oxide-semiconductor field effect transistor technique are completely simultaneous
Hold, easily realizes full monolithic optoelectronic integration (OEIC) device.
In addition to fast response speed, high-performance optical electric explorer also needs that there is high absorptivity to guarantee detector
High-quantum efficiency.In order to realize high light absorption in relatively thin semiconductor material, periodically micro- knot is integrated in photo-conductive film
Structure is proved to be a kind of effective method.Microstructure size and detection wavelength are in same magnitude, and due to scale effect, radiation is special
Property and transmission characteristic all can there are larger differences with the radiation characteristic under traditional macro-scale.Micro-structure can cause multiple anti-
It penetrates and diffraction effect, generates a variety of abnormal radiation phenomenons.It can not only increase propagation path and the suction of light by multiple reflections
Probability is received, additional light can also be introduced by the coupling with electromagnetic wave to increase and absorb.Therefore, in semiconductive thin film
It can be improved in visible light and the absorption characteristic of infrared wavelength range interior focusing in construction periodic micro structure.Wu give it is bright et al.
Solar cell surface is integrated with rectangular raster light trapping structure and triangular grating light trapping structure, and result of study shows both
Light trapping structure all effectively improves solar cell surface to the absorptivity of visible light and near infrared band, to improve the sun
The overall conversion efficiency of energy battery；(micro-nano falls into light optical grating construction laser magazine .2010 in the solar battery such as Wu Feng Ping,
(005):15-17)；Leem et al. has gone out parabola shaped Asia in the Al-Doped ZnO film surface structure of silica-based solar cell
Wavelength grate structure, compared to simple membrane structure, this structure can be readily apparent that inhibit surface reflection, to improve too
Absorption characteristic (J.Leem, et al.Biomimetic parabola-shaped AZO of the positive energy battery surface to sunlight
subwavelength grating structures for efficient antireflection of Si-based
solar cells.Solar Energy Materials and Solar Cells.2011,95(8):2221-2227)；
H.Cansizoglu etc. is integrated with period pore structure in silicon and germanium PIN photodiode, passes light laterally in semiconductive thin film
It broadcasts, significantly improves absorptivity and sensitive detection parts quantum efficiency (H.Cansizoglu, et in 800~1700nm wave band
al.Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with
improved efficiency up to 1700nm.Photonics Research.2018,6(7):734-742)。
In conclusion MSM structure can ensure the high-speed response of photodetector, integrated periodically in semiconductive thin film
The high-selenium corn and quantum efficiency of photodetector can be enhanced in light trapping structure.However, the interdigital electrode needs in MSM structure make
It just can ensure that photo-generated carrier rapid drift and collection between electrode with lesser electrode spacing (0.8 μm of <), it is high to realize
The speed of response and bandwidth, as shown in Figure 3.And the microstructure size in semiconductor material is needed with detection wavelength in same magnitude
Higher absorptivity can be provided.In longer wavelengths of infrared band, microstructure size will be much larger than electrode spacing.This will so that
Have the interdigital electrode layer of smaller electrode spacing extremely difficult in the semiconductor film film surface preparation for being integrated with micro-structure.
Summary of the invention
In view of the above-mentioned problems, can either meet the object of the present invention is to provide a kind of preparation method of MSM photoelectric detector
Fast response speed requirement, and it is able to satisfy high-quantum efficiency.
The technical solution adopted by the present invention is that a kind of preparation method of MSM photoelectric detector, comprising the following steps:
Semiconductive thin film is prepared on SOI Substrate；Wherein, SOI Substrate includes the silicon substrate that formation is successively electroplated from top to bottom
Lamella, silicon dioxide layer and silicon membrane layer, the semiconductive thin film attach on the silicon membrane layer upper surface；
It is electroplated on the semiconductive thin film and graphically forms several interdigital electrodes；
Silicon dioxide layer is removed using etch, so that silicon substrate layer and silicon dioxide layer fall off from silicon membrane layer；
Several period holes are etched along its longitudinal direction on the semiconductive thin film and form periodical light trapping structure, often
A cycle hole extends to silicon membrane layer and protrudes into silicon membrane layer, each hole in period not through silicon membrane layer, period hole
Period is 0.5-13 μm.
It further limits, semiconductive thin film described in step is by silicon, germanium, vulcanized lead, lead selenide, indium gallium arsenic and mercury cadmium telluride
One of be made.
Further limit, the semiconductive thin film with a thickness of 0.5~5 μm.
It further limits, the interdigital electrode of each in step is by any one in gold, bismuth, titanium or aluminium or at least two
The alloy of kind is made.
Further limit, each interdigital electrode with a thickness of 20~200nm, 0.3~3 μm of electrode line width,
The distance between interdigital electrode described in arbitrary neighborhood is 0.1~1 μm.
It further limits, for etch described in step using buffered hydrofluoric acid solution as corrosive liquid, buffered hydrofluoric acid is molten
The concentration of hydrofluoric acid and ammonium fluoride ratio is 1:3~1:10 in liquid.
It further limits, period hole described in step is prepared using photoetching and deep reaction ion etching technique.
It further limits, the period hole is square hole or round hole, and the period hole is by four directions or hexagonal lattice row
Column, the side length or diameter and the ratio in period in period hole are 0.4~0.9.
It further limits, the semiconductive thin film uses molecular beam epitaxial method or mocvd method
Preparation.
Compared with the prior art, the advantages of the present invention are as follows:
One, the periodical light trapping structure that the present invention is integrated in semiconductive thin film by etching, solves semiconductor film
Device when period pore size is greater than surface electrode spacing in film is prepared and integrated problem.This preparation method can guarantee simultaneously
MSM photoelectric detector has small electrode spacing, period pore size and electrode spacing close, to realize fast response speed simultaneously
Degree and high quantum efficiency；
Two, preparation process of the present invention simplifies, and can be widely applied to visible light and infrared acquisition and technical field of imaging.
Detailed description of the invention
A~f is the diagrammatic cross-section of simple preparation flow of the invention in Fig. 1, wherein 1-a is that the section of SOI Substrate shows
It is intended to, Fig. 1-b is the diagrammatic cross-section for preparing the SOI Substrate of semiconductive thin film；Fig. 1-c is the SOI for preparing interdigital electrode
The diagrammatic cross-section of substrate；Fig. 1-d is the diagrammatic cross-section being detached from after silicon base；Fig. 1-e is after being detached from silicon base to turning over
Diagrammatic cross-section after turning；Fig. 1-f is the diagrammatic cross-section after manufacturing cycle light trapping structure；
A~e is the top view of simple preparation flow of the invention in Fig. 2, wherein 2-a is the top view of SOI Substrate；2-b
For prepare semiconductive thin film SOI Substrate top view；Fig. 2-c is the top view for preparing the SOI Substrate of interdigital electrode；Figure
2-d be detached from silicon base after be flipped up after top view；Fig. 2-e is the top view after manufacturing cycle light trapping structure；
Fig. 3 is the 3dB frequency response distribution map of MSM detector under Different electrodes spacing；
Fig. 4 is that the MSM photoelectric detector of periodical light trapping structure is integrated in embodiment 1 in 0.8~0.9 mu m waveband
Optical absorption characteristics curve and its absorption comparison diagram with the flat semiconductive thin film of same thickness；
Fig. 5 is that the MSM photoelectric detector of periodical light trapping structure is integrated in embodiment 2 in 0.38~0.48 mu m waveband
Optical absorption characteristics curve and its absorption comparison diagram with the flat semiconductive thin film of same thickness；
Fig. 6 is light of the MSM photoelectric detector in 8~12 mu m wavebands that periodical light trapping structure is integrated in embodiment 3
Absorption characteristic and its absorption comparison diagram with the flat semiconductive thin film of same thickness；
Wherein: 10- silicon chip；11- silicon dioxide layer；12- silicon thin film；20- semiconductor light sensitive film；30- interdigital electrode；
40- periodicity light trapping structure.
Specific embodiment
To make those skilled in the art understand the production technology and technique effect of the present invention in detail, below specifically to produce
Example is further described application and the technique effect of the present invention.
A kind of preparation method of MSM photoelectric detector, comprising the following steps:
(1) semiconductive thin film 20 is prepared on SOI Substrate；Wherein, SOI Substrate includes that formation is successively electroplated from top to bottom
Silicon substrate layer 10, silicon dioxide layer 11 and silicon membrane layer 12, as shown in Fig. 1-a and Fig. 2-a, the semiconductive thin film 20, which uses, to be divided
Beamlet epitaxy method or Metalorganic Chemical Vapor Deposition attach on 12 upper surface of silicon membrane layer, such as Fig. 1-b and figure
Shown in 2-b；
(2) magnetron sputtering method is used on the semiconductive thin film 20 and graphically forms several interdigital electrodes 30, is such as schemed
Shown in 1-c and Fig. 2-c；
(3) use buffered hydrofluoric acid solution corrosion silicon dioxide layer 11 so that silicon dioxide layer 11 and silicon substrate layer 10 from
It falls off on silicon membrane layer 12, as shown in Fig. 1-d, the concentration of hydrofluoric acid and ammonium fluoride ratio is 1:3~1 in buffered hydrofluoric acid solution:
10；Fig. 1-e be detached from silicon base after be flipped up after diagrammatic cross-section；Fig. 2-d is being flipped up after being detached from silicon base
Top view afterwards.
(4) if being prepared along its longitudinal direction using photoetching and deep reaction ion etching technique on the semiconductive thin film 20
Dry period hole and the periodical light trapping structure 40 of formation, each period hole extend to silicon membrane layer 12 and protrude into silicon membrane layer 12
Interior, each period hole is not through silicon membrane layer 12, and as shown in Fig. 1-f and Fig. 2-e, the period in period hole is 0.5-13 μm, institute
It states period hole and is square hole or round hole, the period hole is by four directions or hexagonal lattice arrangement, the side length or diameter in period hole
And the ratio in period is 0.4~0.9.
Semiconductive thin film 20 described in step (1) is by one in silicon, germanium, vulcanized lead, lead selenide, indium gallium arsenic and mercury cadmium telluride
Kind is made；The semiconductive thin film 20 with a thickness of 0.5~5 μm.
The interdigital electrode 30 of each in step (2) by gold, bismuth, titanium or aluminium any one or at least two conjunction
Gold is made；Each interdigital electrode 30 with a thickness of 20~200nm, 0.3~3 μm of electrode line width, arbitrary neighborhood institute
Stating the distance between interdigital electrode 30 is 0.1~1 μm.
Embodiment 1
As shown in Figure 1, a kind of preparation method of high speed, high efficiency MSM photoelectric detector, includes the following steps:
(1) select SOI Substrate for device substrate, SOI Substrate include the silicon substrate layer 10 that formation is successively electroplated from top to bottom,
Silicon dioxide layer 11 and silicon membrane layer 12, silicon substrate layer is 500 μm in SOI Substrate, and silicon dioxide layer thickness is 3 μm, silicon thin film
Layer is 0.25 μm, and the removal of cleaning SOI Substrate surface is stain, and is toasted at 200 DEG C to SOI Substrate, and baking time 30 divides
Clock removes the steam on surface, as shown in Fig. 1-a；
(2) one layer of silicon thin film is prepared on SOI Substrate using molecular beam epitaxial method, silicon thin thickness is 2 μm, such as Fig. 1-b
It is shown；
(3) metal aluminium film, film thickness 50nm, graphical aluminium film are prepared on silicon thin film using magnetron sputtering method
Form several interdigital electrodes, 0.8 μm of electrode line width, 0.6 μm of adjacent electrode spacing, as shown in fig 1-c.It is provided not by Fig. 3
The 3dB frequency response situation of MSM detector under same electrode spacing (spacing), it can be seen that 0.6 μm of electrode spacing can be with
Meet the high-speed applications of 20GHz or more.Meanwhile when electrode spacing is smaller, periodicity light trapping structure is integrated on silicon thin film,
The capacitor that MSM photoelectric detector can be reduced, further increases response speed and bandwidth.
(4) SiO is removed using buffered hydrofluoric acid solution corrosion2The concentration ratio of layer, hydrofluoric acid and ammonium fluoride is 1:5, makes SiO2
Layer and silicon substrate layer 10 fall off from silicon membrane layer 12, as shown in Fig. 1-d；
(5) it will be disengaged from the device overturning of silicon membrane layer 12, fallen into order to carry out periodical light on the surface of silicon membrane layer 12
Well structure is graphical, as shown in Fig. 1-e and Fig. 2-d；
(6) it is sequentially etched two layers of silicon thin film, and does not etch the silicon thin film for wearing layer, several period holes is formed, ultimately forms
Periodical light trapping structure.Each period hole is arranged by hexagonal lattice, and the period is 1 μm, the diameter in hole be 0.7 μm (diameter with
The ratio in period is 0.7), high speed, high efficiency MSM photoelectric detector to be obtained, as shown in Fig. 1-f.
MSM photodetection using rigorous couple-wave analysis method to periodical light trapping structure is integrated in the present embodiment
Device is calculated in the optical absorption characteristics of 0.8~0.9 mu m waveband, and calculated result is as shown in figure 4, abscissa is wavelength, ordinate
For absorptivity.
Calculated result shows that, compared to continuous MSM photoelectric detector, periodical light trapping structure significantly improves MSM
The efficiency of light absorption of photodetector.
Embodiment 2
As shown in Figure 1, a kind of preparation method of high speed, high efficiency MSM photoelectric detector, includes the following steps:
(1) select SOI Substrate for device substrate, SOI Substrate includes the silicon substrate layer that formation is successively electroplated from top to bottom, two
Silicon oxide layer and silicon membrane layer, silicon substrate layer is 500 μm in SOI Substrate, and silicon dioxide layer thickness is 3 μm, and silicon membrane layer is
0.25 μm, the removal of cleaning SOI Substrate surface is stain, and is toasted at 200 DEG C to SOI Substrate, baking time 30 minutes, is removed
Remove the steam on surface；
(2) one layer of silicon thin film is prepared on SOI Substrate using Metalorganic Chemical Vapor Deposition, silicon film thickness is
0.5μm；
(3) alloy firm of bismuth metal and titanium is prepared on silicon thin film using magnetron sputtering method, film thickness 200nm,
The thin several interdigital electrodes of formation of figure alloy, 3 μm of electrode line width, 1 μm of adjacent electrode spacing.
The 3dB frequency response situation of MSM detector under Different electrodes spacing (spacing) is provided by Fig. 3, it can be seen that
0.6 μm of electrode spacing can satisfy the high-speed applications of 20GHz or more.Meanwhile when electrode spacing is smaller, collect on silicon thin film
At periodical light trapping structure, it is possible to reduce the capacitor of MSM photoelectric detector further increases response speed and bandwidth.
(4) SiO is removed using buffered hydrofluoric acid solution corrosion2The concentration ratio of layer, hydrofluoric acid and ammonium fluoride is 1:10, is made
SiO2Layer and silicon substrate layer fall off from silicon membrane layer；
(5) it will be disengaged from the device overturning of silicon membrane layer, in order to carry out periodical light trapping knot on the surface of silicon membrane layer
Structure is graphical；
(6) it is sequentially etched two layers of silicon thin film, and does not etch the silicon thin film for wearing layer, several period holes is formed, ultimately forms
Periodical light trapping structure.Cubic lattice arrangement is pressed in each period hole, and the period is 0.5 μm, and the diameter in hole is 0.45 μm of (diameter
And the ratio in period is 0.9), to obtain high speed, high efficiency MSM photoelectric detector.
MSM photodetection using rigorous couple-wave analysis method to periodical light trapping structure is integrated in the present embodiment
Device is calculated in the optical absorption characteristics of 0.38~0.48 mu m waveband, and calculated result is as shown in Figure 5.
Calculated result shows that, compared to continuous MSM photoelectric detector, periodical light trapping structure significantly improves MSM
The efficiency of light absorption of photodetector.
Embodiment 3
A kind of preparation method of high speed, high efficiency MSM photoelectric detector, includes the following steps:
(1) select SOI Substrate for device substrate, SOI Substrate includes the silicon substrate layer that formation is successively electroplated from top to bottom, two
Silicon oxide layer and silicon membrane layer, silicon substrate layer is 500 μm in SOI Substrate, and silicon dioxide layer thickness is 3 μm, and silicon membrane layer is
0.25 μm, the removal of cleaning SOI Substrate surface is stain, and is toasted at 200 DEG C to SOI Substrate, baking time 30 minutes, is removed
Remove the steam on surface；
(2) one layer of mercury cadmium telluride thin film, mercury cadmium telluride thin film are prepared on SOI Substrate using Metalorganic Chemical Vapor Deposition
With a thickness of 5 μm；
(3) alloy firm of bismuth metal and titanium, film thickness 20nm, figure are prepared on silicon thin film using magnetron sputtering method
The thin several interdigital electrodes of formation of shape alloy, 0.3 μm of electrode line width, 0.1 μm of adjacent electrode spacing.
The 3dB frequency response situation of MSM detector under Different electrodes spacing (spacing) is provided by Fig. 3, abscissa is electricity
Interpolar is away from ordinate is 3d frequency, it can be seen that 0.6 μm of electrode spacing can satisfy the high-speed applications of 20GHz or more.Together
When, when electrode spacing is smaller, periodicity light trapping structure is integrated on silicon thin film, it is possible to reduce the electricity of MSM photoelectric detector
Hold, further increases response speed and bandwidth.
(4) SiO is removed using buffered hydrofluoric acid solution corrosion2The concentration ratio of layer, hydrofluoric acid and ammonium fluoride is 1:3, makes SiO2
Layer and silicon substrate layer fall off from silicon membrane layer；
(5) it will be disengaged from the device overturning of silicon membrane layer, in order to carry out periodical light trapping knot on the surface of silicon membrane layer
Structure is graphical；
(6) it is sequentially etched silicon thin film and mercury cadmium telluride thin film, and does not etch the mercury cadmium telluride thin film for wearing layer, forms several periods
Hole ultimately forms periodical light trapping structure.Cubic lattice arrangement is pressed in each period hole, and the period is 13 μm, and the diameter in hole is
5.2 μm (diameter and the ratio in period be 0.4), obtain high speed, high efficiency MSM photoelectric detector.
MSM photodetection using rigorous couple-wave analysis method to periodical light trapping structure is integrated in the present embodiment
Optical absorption characteristics of the device in 8~12 mu m wavebands (belonging to long wave infrared region) are calculated, and calculated result is as shown in Figure 6.
Calculated result shows that, compared to continuous MSM photoelectric detector, periodical light trapping structure significantly improves MSM
The efficiency of light absorption of photodetector.
The specific embodiment of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
The limitation to the application protection scope therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, under the premise of not departing from technical scheme design, various modifications and improvements can be made, these belong to this
The protection scope of application.
Claims (9)
1. a kind of preparation method of MSM photoelectric detector, which comprises the following steps:
(1) semiconductive thin film (20) are prepared on SOI Substrate；Wherein, SOI Substrate includes the silicon that formation is successively electroplated from top to bottom
Substrate layer (10), silicon dioxide layer (11) and silicon membrane layer (12), the semiconductive thin film (20) attach to the silicon membrane layer
(12) on upper surface；
(2) it is electroplated on the semiconductive thin film (20) and graphically forms several interdigital electrodes (30)；
(3) using etch removal silicon dioxide layer (11), so that silicon substrate layer (10) and silicon dioxide layer (11) are from silicon thin film
It falls off on layer (12)；
(4) several period holes are etched along its longitudinal direction on the semiconductive thin film (20) and forms periodical light trapping structure
(40), each period hole extends to silicon membrane layer (12) and protrudes into silicon membrane layer (12), each period hole is not through silicon
Film layer (12), the period in period hole are 0.5-13 μm.
2. a kind of preparation method of MSM photoelectric detector according to claim 1, which is characterized in that described in step (1)
Semiconductive thin film (20) is made of one of silicon, germanium, vulcanized lead, lead selenide, indium gallium arsenic and mercury cadmium telluride.
3. a kind of preparation method of MSM photoelectric detector according to claim 2, which is characterized in that the semiconductor film
Film (20) with a thickness of 0.5~5 μm.
4. a kind of preparation method of MSM photoelectric detector according to claim 1, which is characterized in that each in step (2)
A interdigital electrode (30) is made of any one or at least two alloy in gold, bismuth, titanium or aluminium.
5. a kind of preparation method of MSM photoelectric detector according to claim 4, which is characterized in that each described fork
Refer to electrode (30) with a thickness of 20~200nm, 0.3~3 μm of electrode line width, between interdigital electrode described in arbitrary neighborhood (30)
Distance be 0.1~1 μm.
6. a kind of preparation method of MSM photoelectric detector according to claim 1-5, which is characterized in that step
(3) etch described in using buffered hydrofluoric acid solution as corrosive liquid, hydrofluoric acid and ammonium fluoride in buffered hydrofluoric acid solution
Concentration ratio is 1:3~1:10.
7. a kind of preparation method of MSM photoelectric detector according to claim 6, which is characterized in that the period hole is
Square hole or round hole, the period hole is by four directions or hexagonal lattice arrangement, the side length or diameter in period hole and the ratio in period
It is 0.4~0.9.
8. a kind of preparation method of MSM photoelectric detector according to claim 1, which is characterized in that the semiconductor film
Film (20) is prepared using molecular beam epitaxial method or mocvd method.
9. the MSM photoelectric detector of any one of -8 preparation method preparations according to claim 1.
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| CN111816715A (en) * | 2020-08-24 | 2020-10-23 | 中国科学院长春光学精密机械与物理研究所 | Zinc oxide nanowire array ultraviolet detector and preparation method thereof |
| CN111816715B (en) * | 2020-08-24 | 2024-03-08 | 中国科学院长春光学精密机械与物理研究所 | Zinc oxide nanowire array ultraviolet detector and preparation method thereof |
| RU2821170C1 (en) * | 2023-09-27 | 2024-06-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" | Photosensitive composition and method for its production |
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