CN111370525A - Photoelectric detector, preparation method thereof and photoelectric detection device - Google Patents
Photoelectric detector, preparation method thereof and photoelectric detection device Download PDFInfo
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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Abstract
The invention discloses a photoelectric detector, a preparation method thereof and a photoelectric detector, wherein a photosensitive semiconductor layer is directly formed on a substrate, and an electrode layer is formed on the substrate with the photosensitive semiconductor layer, namely, a photosensitive device is formed on the substrate first, and then a switch transistor is formed, so that the uniformity of each film layer in the photosensitive device can be improved, the integral uniformity of the photoelectric detector is improved, and the performance of the photoelectric detector is improved; in addition, in the prior art, a switching transistor is firstly formed and then a photosensitive device is formed, so that the photosensitive semiconductor layer influences the electrical characteristics of the metal oxide TFT; the photosensitive semiconductor layer is formed on the substrate firstly, so that the influence of the photosensitive semiconductor layer on the electrical characteristics of the metal oxide TFT can be reduced; in addition, Mask technology can be reduced by adopting the structure of the invention.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a photoelectric detector, a preparation method thereof and a photoelectric detection device.
Background
A Metal-Semiconductor-Metal (MSM) type photodetector utilizes a schottky barrier at the Metal-Semiconductor interface to form a PN junction-like carrier depletion region. Photogenerated carriers generated by incident light in the semiconductor drift in the reverse Schottky junction depletion region under the action of an external electric field and are rapidly collected by electrodes at two ends of the photoelectric detector. The MSM structure photodetector has the characteristics of simple structure, small parasitic capacitance, high response speed, low manufacturing process cost and the like, and is widely applied to various photon and particle detectors.
Disclosure of Invention
The embodiment of the invention provides a photoelectric detector, a preparation method thereof and a photoelectric detection device, which are used for improving the overall uniformity of the photoelectric detector, reducing the influence of a photosensitive semiconductor layer of the photoelectric detector on the electrical characteristics of a metal oxide TFT and reducing Mask processes.
An embodiment of the present invention provides a photodetector, including: the semiconductor device comprises a substrate base plate, a photosensitive semiconductor layer directly positioned on the substrate base plate and an electrode layer positioned on one side of the photosensitive semiconductor layer, which is far away from the substrate base plate.
Optionally, in a specific implementation, in the foregoing photodetector provided in an embodiment of the present invention, the photodetector further includes: the first passivation layer is positioned on one side, away from the substrate, of the electrode layer, and the switch transistor is positioned on one side, away from the substrate, of the first passivation layer; the channel layer of the switching transistor is made of metal oxide, and the drain of the switching transistor is electrically connected with the first electrode.
Optionally, in a specific implementation, in the foregoing photodetector provided in an embodiment of the present invention, the photodetector further includes: a second passivation layer between the electrode layer and the first passivation layer, and a light shielding layer between the first passivation layer and the second passivation layer; the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the channel layer of the switching transistor on the substrate.
Correspondingly, the embodiment of the invention also provides a photoelectric detection device which comprises the photoelectric detector.
Correspondingly, the embodiment of the invention also provides a preparation method of the photoelectric detector, which comprises the following steps:
directly forming a photosensitive semiconductor layer on a substrate;
forming an electrode layer on the substrate with the photosensitive semiconductor layer formed thereon; the electrode layer comprises a first electrode and a second electrode which are insulated from each other and arranged at intervals.
Optionally, in specific implementation, in the above preparation method provided in an embodiment of the present invention, after forming the photosensitive semiconductor layer and before forming the electrode layer, the method further includes: a barrier enhancing layer is formed.
Optionally, in a specific implementation, in the above preparation method provided in an embodiment of the present invention, the forming a barrier enhancing layer specifically includes:
and forming the barrier enhancement layer at a temperature of 260-400 ℃ by adopting a chemical vapor deposition method.
Optionally, in specific implementation, in the above preparation method provided in an embodiment of the present invention, after forming the photosensitive semiconductor layer and before forming the barrier enhancing layer, the method further includes:
and annealing the photosensitive semiconductor layer at a temperature of more than 230 ℃.
Optionally, in specific implementation, in the preparation method provided in the embodiment of the present invention, the method further includes:
forming a first passivation layer on the substrate with the electrode layer formed thereon;
forming a switching transistor on the substrate base plate on which the first passivation layer is formed; the channel layer of the switching transistor is made of metal oxide, and the drain of the switching transistor is electrically connected with the first electrode.
Optionally, in a specific implementation, in the above preparation method provided in an embodiment of the present invention, before forming the first passivation layer, the method further includes:
forming a second passivation layer on the substrate on which the conductive layer is formed;
forming a light-shielding layer on the substrate on which the second passivation layer is formed; the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the channel layer of the switching transistor on the substrate.
The invention has the following beneficial effects:
the invention provides a photoelectric detector, a preparation method thereof and a photoelectric detection device, wherein the MSM type photoelectric detector generally comprises a photosensitive device and a switch transistor electrically connected with the photosensitive device; in addition, in the prior art, a switching transistor is firstly formed and then a photosensitive device is formed, because the material of a photosensitive semiconductor layer of the photosensitive device is a-Si, when an a-Si layer is deposited, hydrogen ions can drift towards an active layer of a metal oxide TFT, so that donor defects are generated on the active layer of the metal oxide TFT, namely the active layer of the metal oxide TFT has more electrons, so that the active layer of the metal oxide TFT is conducted in advance, and the threshold voltage of the metal oxide TFT drifts, therefore, the photosensitive semiconductor layer influences the electrical characteristics of the metal oxide TFT in the method for preparing the photoelectric detector in the prior art; the photosensitive semiconductor layer is formed on the substrate firstly, so that the photosensitive semiconductor layer does not influence an active layer of a metal oxide TFT formed subsequently, and the influence of the photosensitive semiconductor layer of the photoelectric detector on the electrical characteristics of the metal oxide TFT can be reduced; in addition, the preparation method of the invention can also reduce Mask process.
Drawings
Fig. 1 is a schematic structural view of a photodetector in the related art;
FIG. 2 is a voltage-current characteristic curve measured for the structure shown in FIG. 1 under different source-drain voltages of the switching transistor;
fig. 3 is a schematic flow chart of a method for manufacturing a photodetector according to an embodiment of the present invention;
fig. 4 is a second schematic flow chart of a method for manufacturing a photodetector according to an embodiment of the present invention;
fig. 5 is a third schematic flowchart of a method for manufacturing a photodetector according to an embodiment of the present invention;
fig. 6 is a fourth schematic flowchart of a method for manufacturing a photodetector according to an embodiment of the present invention;
fig. 7 is a fifth schematic flowchart of a method for manufacturing a photodetector according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of a photodetector according to an embodiment of the present invention;
fig. 9 is a schematic top view of an electrode layer in a photodetector according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. And the embodiments and features of the embodiments may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
It should be noted that the sizes and shapes of the figures in the drawings are not to be considered true scale, but are merely intended to schematically illustrate the present invention. And the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout.
Currently, a related art MSM type photodetector, as shown in fig. 1, includes a substrate 01, a switching transistor 02 (in order to improve mobility, the switching transistor 02 is a metal oxide type transistor) on the substrate, a first passivation layer 03 on the switching transistor 02, a first flat layer 04 on the first passivation layer 03, a buffer layer 05 on the first flat layer 04, a light shielding layer 06 on the buffer layer 05, a second flat layer 07 on the light shielding layer 06, a second passivation layer 08 on the second flat layer 07, an electrode layer 09 on the second passivation layer 08, a barrier enhancing layer 10 on the electrode layer 09, a photosensitive semiconductor layer 11 on the barrier enhancing layer 10, and a third passivation layer 12 on the photosensitive semiconductor layer 11. In the prior art, when the photodetector shown in fig. 1 is manufactured, the switching transistor 02 is manufactured on the substrate 01, and then the photosensitive device composed of the electrode layer 09, the barrier enhancement layer 10 and the photosensitive semiconductor layer 11 is formed on the switching transistor 02, because the photosensitive semiconductor layer 11 is made of a-Si, when the a-Si layer is deposited in the prior art, the deposition material includes silane and hydrogen plasma, and hydrogen ions drift toward the active layer of the switching transistor 02 during the deposition process, so that donor defects are generated in the active layer of the switching transistor 02, that is, the active layer of the switching transistor 02 has more electrons, so that the active layer of the switching transistor 02 is conducted in advance, and the threshold voltage of the switching transistor 02 drifts, therefore, in the prior art method for manufacturing the photodetector, the photosensitive semiconductor layer 11 affects the electrical characteristics of the switching transistor 02, as shown in fig. 2, fig. 2 is a graph illustrating a current-voltage characteristic curve test performed by taking the photodetector shown in fig. 1 as an example, wherein the abscissa represents the voltage V and the ordinate represents the current I, the source-drain voltages Vds of the switching transistor 02 were tested at 0.1V, 5.1V, 10.1V and 15.1V, respectively, using a constant current method, the intersection points of the four curves corresponding to 0.1V, 5.1V, 10.1V, and 15.1V when the current I is 1.0E-9 are the threshold voltage Vth of the switching transistor 02, it is possible to obtain a threshold voltage Vth of-11.739 when Vds is 0.1V, a threshold voltage Vth of-12.213 when Vds is 5.1V, a threshold voltage Vth of-12.392 when Vds is 10.1V, a threshold voltage Vth of-12.425 when Vds is 15.1V, since the threshold voltage Vth of the switching transistor 02 is generally close to 0, the photosensitive semiconductor layer 11 in the method of manufacturing a photodetector according to the related art exerts an influence on the electrical characteristics of the switching transistor 02. In addition, the electrode layer 09 in fig. 1 generally includes interdigital electrodes that are insulated from each other and are independently disposed, which results in unevenness of the barrier enhancing layer 10 fabricated on the electrode layer 09, and the uniformity of the photodetector is poor due to the fact that the thickness of the barrier enhancing layer 10 is thin and is difficult to control, thus resulting in poor device performance; moreover, after the switch transistor 02 and the shading layer 06 in fig. 1 are manufactured, a flat layer needs to be arranged, and the material of the flat layer is generally a resin material and is not resistant to high temperature, so that the barrier enhancement layer 10 and the photosensitive semiconductor layer 11 which are subsequently deposited cannot be deposited at high temperature, the film quality is poor, and the defects inside the barrier enhancement layer 10 are more, so that the dark current of the photosensitive device is larger, the contrast between the photocurrent and the dark current is reduced, and the sensitivity is reduced; in addition, when the photodetector of fig. 1 is manufactured, two flat layers need to be deposited, so that the Mask process of the overall manufacturing process is more, and the manufacturing process flow is more complicated.
In view of this, an embodiment of the present invention provides a method for manufacturing a photodetector, as shown in fig. 3, the method may include:
s101, directly forming a photosensitive semiconductor layer on a substrate;
s102, forming an electrode layer on the substrate with the photosensitive semiconductor layer; the electrode layer comprises a first electrode and a second electrode which are insulated from each other and arranged at intervals.
According to the preparation method of the photoelectric detector provided by the embodiment of the invention, the MSM type photoelectric detector generally comprises a photosensitive device and a switch transistor electrically connected with the photosensitive device, the photosensitive semiconductor layer is directly formed on the substrate, and the electrode layer is formed on the substrate with the photosensitive semiconductor layer, namely, the photosensitive device is formed on the substrate first, and then the switch transistor is formed, so that the uniformity of each film layer in the photosensitive device can be improved, the integral uniformity of the photoelectric detector is improved, and the performance of the photoelectric detector is improved; in addition, in the prior art, a switching transistor is firstly formed and then a photosensitive device is formed, because the material of a photosensitive semiconductor layer of the photosensitive device is a-Si, when an a-Si layer is deposited, hydrogen ions can drift towards an active layer of a metal oxide TFT, so that donor defects are generated on the active layer of the metal oxide TFT, namely the active layer of the metal oxide TFT has more electrons, so that the active layer of the metal oxide TFT is conducted in advance, and the threshold voltage of the metal oxide TFT drifts, therefore, the photosensitive semiconductor layer influences the electrical characteristics of the metal oxide TFT in the method for preparing the photoelectric detector in the prior art; the photosensitive semiconductor layer is formed on the substrate firstly, so that the photosensitive semiconductor layer does not influence an active layer of a metal oxide TFT formed subsequently, and the influence of the photosensitive semiconductor layer of the photoelectric detector on the electrical characteristics of the metal oxide TFT can be reduced; in addition, the preparation method of the invention can also reduce Mask process.
It should be noted that the photodetector provided by the embodiment of the present invention is an MSM type photodetector.
In practical implementation, in the above preparation method provided by the embodiment of the present invention, as shown in fig. 4, after forming the photosensitive semiconductor layer and before forming the electrode layer, the method further includes:
s102', forming a potential barrier enhancement layer; therefore, the thickness between the photosensitive semiconductor layer and the electrode layer of the MSM type photoelectric detector is increased, the interface potential energy is improved, and the potential barrier is improved, so that the dark current of the MSM type photoelectric detector can be reduced, and the sensitivity of the MSM type photoelectric detector is improved.
In a specific implementation, in the preparation method provided in the embodiment of the present invention, the forming the barrier enhancing layer may specifically include:
and forming a barrier enhancement layer at the temperature of 260-400 ℃ by adopting a chemical vapor deposition method. Because each film layer of the photosensitive device is formed firstly and then the switch transistor (described later) is formed, a flat layer made of resin is not required to be manufactured, on one hand, the potential barrier enhancement layer can be deposited at high temperature, such as 260-400 ℃, the film quality of the potential barrier enhancement layer formed at the temperature is better, and the internal defects of the potential barrier enhancement layer are fewer, so that the dark current of the photoelectric detector can be further reduced, and the sensitivity of the MSM type photoelectric detector is further improved; on the other hand, Mask for manufacturing the flat layer is reduced, thereby reducing the complexity of the manufacturing process.
In practical implementation, in the above manufacturing method provided by the embodiment of the present invention, as shown in fig. 5, after forming the photosensitive semiconductor layer and before forming the barrier enhancing layer, the method further includes:
s101', annealing the photosensitive semiconductor layer at the temperature higher than 230 ℃. Because the invention forms each membranous layer of the light sensing device first, form the switching transistor (introduce later), therefore does not need to make the material for the flat layer of the resin, on the one hand the light sensing semiconductor layer can deposit under the high temperature, such as depositing under the temperature greater than 230 duC, can eliminate the residual hydrogen ion while depositing, thus reduce the dangling bond, therefore the membranous quality of the light sensing semiconductor layer formed under this temperature is better, the internal defect is less, therefore can further reduce the dark current of the photodetector, thus further raise the sensitivity of MSM type photodetector; on the other hand, Mask for manufacturing the flat layer is reduced, thereby reducing the complexity of the manufacturing process.
In practical implementation, the above-mentioned preparation method provided by the embodiment of the present invention can reduce the Mask process for fabricating two planar layers at least as compared with the structure shown in fig. 1 in the related art.
In specific implementation, in the above preparation method provided in the embodiment of the present invention, as shown in fig. 6, the method further includes:
s103, forming a first passivation layer on the substrate with the electrode layer;
specifically, the first passivation layer is deposited at a high temperature of 150 ℃ -400 ℃ (preferably 370 ℃), the film quality of the first passivation layer deposited at the high temperature is good, the probability that hydrogen ions diffuse to a subsequently formed channel layer of the switching transistor during the deposition of the photosensitive semiconductor layer can be reduced, and therefore the electrical characteristics of the switching transistor cannot be influenced; specifically, the material of the first passivation layer may be SiO2And may of course be other insulating materials.
S104, forming a switch transistor on the substrate base plate with the first passivation layer; in order to improve the mobility, the channel layer of the switching transistor is made of metal oxide, such as Indium Gallium Zinc Oxide (IGZO); and the drain of the switching transistor is electrically connected to the first electrode.
In specific implementation, in the above preparation method provided by the embodiment of the present invention, as shown in fig. 7, before forming the first passivation layer, the method further includes:
s103', forming a second passivation layer on the substrate with the conductive layer;
specifically, the second passivation layer is deposited at a high temperature of 150 ℃ -400 ℃ (preferably 370 ℃), the film quality of the second passivation layer deposited at the high temperature is good, the probability that hydrogen ions diffuse to a subsequently formed channel layer of the switching transistor during the deposition of the photosensitive semiconductor layer can be further reduced, and therefore the electrical characteristics of the switching transistor are further not influenced; in particular, the material of the second passivation layer may also be SiO2And may of course be other insulating materials.
S103', forming a light shielding layer on the substrate with the second passivation layer; the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the channel layer of the switching transistor on the substrate. Thus, the light shielding layer can shield light, so that incident light is prevented from irradiating the channel layer of the switching transistor, and the detection sensitivity is further improved.
In summary, when the photodetector is manufactured by the above manufacturing method provided by the embodiment of the invention, the conditions of the manufacturing process of each film layer, such as deposition at high temperature, Mask reduction and the like, are reduced, so that the manufacturing process window is enlarged.
Based on the same inventive concept, an embodiment of the present invention further provides a photodetector manufactured by the above method for manufacturing a photodetector, as shown in fig. 8, including: the light-sensitive semiconductor device comprises a substrate base plate 1, a light-sensitive semiconductor layer 2 directly positioned on the substrate base plate 1 and an electrode layer 3 positioned on one side of the light-sensitive semiconductor layer 2, which is far away from the substrate base plate 1; the electrode layer 3 includes a first electrode 31 and a second electrode 32 insulated from each other and spaced apart from each other.
In practical implementation, in the above-described photodetector provided by the embodiment of the present invention, as shown in fig. 8, light L is irradiated onto the photosensitive semiconductor layer 2 from the side of the photosensitive semiconductor layer 2 away from the substrate base plate 1. Generally, incident light enters the photosensitive semiconductor layer 2 to generate photogenerated carriers, and the light intensity becomes weak as light continuously propagates deep in the photosensitive semiconductor layer 2. Conventionally, in order to sufficiently absorb light in the photosensitive semiconductor layer 2, it is necessary to make the film layer of the photosensitive semiconductor layer 2 thick so that all light from the outside can be absorbed in the photosensitive semiconductor layer 2. However, as the thickness of the photosensitive semiconductor layer 2 increases, the gradient change of the concentration distribution of the photogenerated carriers in the photosensitive semiconductor layer 2 in the direction perpendicular to the photosensitive semiconductor layer 2 becomes significant, which is disadvantageous to the light utilization efficiency. Therefore, in order to reduce the thickness of the photosensitive semiconductor layer 2, in a specific implementation, in the above-mentioned photodetector provided in the embodiment of the present invention, the material of the first electrode 31 and the second electrode 32 may be a high-reflectivity opaque metal material, such as a metal material deposited by Mo, Al, Cu, etc., and the thickness of the electrode layer 3 may be 50nm to 1um, preferably 220 nm.
In practical implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the photosensitive semiconductor layer 2 may be a-Si. In order to increase the direct contact area between the photosensitive semiconductor layer 2 and light and increase the light absorption of the photosensitive semiconductor layer 2, in the photodetector provided in the embodiment of the present invention, as shown in fig. 9, the first electrode 31 and the second electrode 32 form an interdigital electrode.
In a specific implementation, as shown in fig. 8, the above-mentioned photodetector provided in the embodiment of the present invention further includes: a first passivation layer 4 located on one side of the electrode layer 3 facing away from the substrate base plate 1, and a switching transistor 5 located on one side of the first passivation layer 4 facing away from the substrate base plate 1; the material of the channel layer 51 of the switching transistor 5 is a metal oxide, and the drain 52 of the switching transistor 5 is electrically connected to the first electrode 31.
For example, in a specific implementation, in the above-mentioned photodetector provided in an embodiment of the present invention, as shown in fig. 8, the switching transistor 5 may include: the channel layer 51, the gate insulating layer 53 over the channel layer 51, the gate electrode 54 over the gate insulating layer 53, and the source and drain electrodes 55 and 52 over the gate electrode 54 and electrically connected to the channel layer 51. The photodetector further includes an interlayer insulating layer 6 between the gate electrode 54 and the source and drain electrodes 55 and 52. Of course, in practical applications, the structure of the switching transistor 5 may also adopt other structures, and is not limited herein.
In practical implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the channel layer 51 may be IGZO, and the thickness may be 20nm to 100nm, and is preferably 40 nm.
In practical implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the gate insulating layer 53 may be SiO, and the thickness may be 50nm to 500nm, and is preferably 150 nm.
In practical implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the gate 54 may be deposited by using a metal material such as Mo, Al, Cu, etc., and the thickness of the gate 54 may be 50nm to 1um, preferably 220 nm.
In practical implementation, in the photodetector provided by the embodiment of the present invention, the material of the interlayer insulating layer 6 may be SiO, and the thickness may be 50nm to 1um, and is preferably 450 nm.
In practical implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the source electrode 55 and the drain electrode 52 may be deposited by using a metal material such as Mo, Al, Cu, etc., and the thickness of the source electrode 55 and the drain electrode 52 may be 50nm to 1um, preferably 220 nm.
In a specific implementation, as shown in fig. 8, the above-mentioned photodetector provided in the embodiment of the present invention further includes: a second passivation layer 7 between the electrode layer 3 and the first passivation layer 4, and a light shielding layer 8 between the first passivation layer 4 and the second passivation layer 7; the orthographic projection of the light shielding layer 8 on the base substrate 1 covers the orthographic projection of the channel layer 51 of the switching transistor 5 on the base substrate 1. This prevents the light shielding layer 8 from blocking light, thereby preventing the channel layer 51 of the switching transistor 5 from being irradiated with incident light, and further improving the detection sensitivity.
In specific implementation, in the photodetector provided by the embodiment of the present invention, the materials of the first passivation layer 4 and the second passivation layer 7 may be SiO2, and the thicknesses thereof may be 100nm to 1um, and are preferably 300 nm.
In addition, the first passivation layer 4 and the second passivation layer 7 may be deposited at a high temperature of 150 ℃ to 400 ℃ (preferably 370 ℃), and the first passivation layer 4 and the second passivation layer 7 deposited at this temperature have good film quality, and the probability of hydrogen ions diffusing to the subsequently formed channel layer 51 of the switching transistor 5 when the photosensitive semiconductor layer 2 is deposited may be further reduced, so that the electrical characteristics of the switching transistor 5 may further not be affected.
In a specific implementation, in the above-mentioned photodetector provided in the embodiment of the present invention, the light shielding layer 8 may be deposited by using a metal material such as Mo, Al, Cu, and the like, and the thickness of the light shielding layer 8 may be 50nm to 1um, and is preferably 220 nm.
In particular implementation, in order to prevent the source and the drain of the switching transistor from being affected by the subsequent processes, in the photodetector provided by the embodiment of the present invention, as shown in fig. 8, a third passivation layer 9 is further included to cover the switching transistor 5, and the third passivation layer 9 may protect the source 55 and the drain 52.
In practical implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the third passivation layer 9 may be SiO2, and the thickness may be 50nm to 1um, and is preferably 300 nm.
In practical implementation, in the above photodetector provided by the embodiment of the present invention, as shown in fig. 8, the photodetector further includes a scintillator 10 located on the substrate board 1 for light measurement, and the material of the scintillator 10 may be Gd2O2Tb (GOS), cesium iodide (CSI) or the like, which can convert the radiated light into visible lightAnd (5) feeding.
In practical implementation, in the above-described photodetector provided by the embodiment of the present invention, the drain electrode 52 is electrically connected to the first electrode 31 through a via hole penetrating the interlayer insulating layer 6, the first passivation layer 4, and the second passivation layer 7.
The preparation methods provided in the examples of the present invention are illustrated below by specific examples.
The preparation method provided by the embodiment of the invention can comprise the following steps:
(1) a photosensitive semiconductor layer 2, a barrier enhancing layer 4, and an electrode layer 3 are sequentially formed on a base substrate 1, and the electrode layer 3 includes a first electrode 31 and a second electrode 32 insulated from each other and disposed at an interval, as shown in fig. 8.
(2) A second passivation layer 7, a light-shielding layer 8, and a first passivation layer 4 are formed on the base substrate 1 on which the electrode layer 3 is formed, as shown in fig. 8.
(3) Forming a switching transistor 5 on the substrate base plate 1 on which the first passivation layer 4 is formed, the forming of the switching transistor sequentially includes forming a channel layer 51, a gate insulating layer 53, a gate electrode 54, forming an interlayer insulating layer 6 covering the gate electrode 54, forming a source electrode 55 and a drain electrode 52, the source electrode 55 and the drain electrode 52 being electrically connected to the channel layer 51 through a via hole penetrating the interlayer insulating layer 6, and the drain electrode 52 being electrically connected to the first electrode 31 through a via hole penetrating the interlayer insulating layer 6, the first passivation layer 4, and the second passivation layer 7, as shown in fig. 8.
(4) A third passivation layer 9 is formed on the substrate base plate 1 where the switching transistor 5 is formed, as shown in fig. 8.
(5) The scintillator 10 is attached to the light incident side of the substrate base 1 as shown in fig. 8.
Based on the same inventive concept, the embodiment of the invention also provides a photoelectric detection device, which comprises the photoelectric detector. The principle of the photo-detection device to solve the problem is similar to the photo-detector, so the implementation of the photo-detection device can be referred to the implementation of the photo-detector, and the repeated parts are not repeated herein.
The invention provides a photoelectric detector, a preparation method thereof and a photoelectric detection device, wherein the MSM type photoelectric detector generally comprises a photosensitive device and a switch transistor electrically connected with the photosensitive device; in addition, in the prior art, a switching transistor is firstly formed and then a photosensitive device is formed, because the material of a photosensitive semiconductor layer of the photosensitive device is a-Si, when an a-Si layer is deposited, hydrogen ions can drift towards an active layer of a metal oxide TFT, so that donor defects are generated on the active layer of the metal oxide TFT, namely the active layer of the metal oxide TFT has more electrons, so that the active layer of the metal oxide TFT is conducted in advance, and the threshold voltage of the metal oxide TFT drifts, therefore, the photosensitive semiconductor layer influences the electrical characteristics of the metal oxide TFT in the method for preparing the photoelectric detector in the prior art; the photosensitive semiconductor layer is formed on the substrate firstly, so that the photosensitive semiconductor layer does not influence an active layer of a metal oxide TFT formed subsequently, and the influence of the photosensitive semiconductor layer of the photoelectric detector on the electrical characteristics of the metal oxide TFT can be reduced; in addition, the preparation method of the invention can also reduce Mask process.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A photodetector, comprising: the semiconductor device comprises a substrate base plate, a photosensitive semiconductor layer directly positioned on the substrate base plate and an electrode layer positioned on one side of the photosensitive semiconductor layer, which is far away from the substrate base plate.
2. The photodetector of claim 1, further comprising: the first passivation layer is positioned on one side, away from the substrate, of the electrode layer, and the switch transistor is positioned on one side, away from the substrate, of the first passivation layer; the channel layer of the switching transistor is made of metal oxide, and the drain of the switching transistor is electrically connected with the first electrode.
3. The photodetector of claim 2, further comprising: a second passivation layer between the electrode layer and the first passivation layer, and a light shielding layer between the first passivation layer and the second passivation layer; the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the channel layer of the switching transistor on the substrate.
4. A photo detection device comprising a photo detector according to any of claims 1-3.
5. A method of fabricating a photodetector, comprising:
directly forming a photosensitive semiconductor layer on a substrate;
forming an electrode layer on the substrate with the photosensitive semiconductor layer formed thereon; the electrode layer comprises a first electrode and a second electrode which are insulated from each other and arranged at intervals.
6. The production method according to claim 5, further comprising, after forming the photosensitive semiconductor layer and before forming the electrode layer: a barrier enhancing layer is formed.
7. The method according to claim 6, wherein the forming the barrier enhancing layer specifically comprises:
and forming the barrier enhancement layer at a temperature of 260-400 ℃ by adopting a chemical vapor deposition method.
8. The production method according to claim 6, further comprising, after forming the photosensitive semiconductor layer and before forming the barrier enhancing layer:
and annealing the photosensitive semiconductor layer at a temperature of more than 230 ℃.
9. The method of any one of claims 5-8, further comprising:
forming a first passivation layer on the substrate with the electrode layer formed thereon;
forming a switching transistor on the substrate base plate on which the first passivation layer is formed; the channel layer of the switching transistor is made of metal oxide, and the drain of the switching transistor is electrically connected with the first electrode.
10. The method of manufacturing of claim 9, further comprising, prior to forming the first passivation layer:
forming a second passivation layer on the substrate on which the conductive layer is formed;
forming a light-shielding layer on the substrate on which the second passivation layer is formed; the orthographic projection of the light shielding layer on the substrate covers the orthographic projection of the channel layer of the switching transistor on the substrate.
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| CN115000204A (en) * | 2022-05-25 | 2022-09-02 | 武汉华星光电半导体显示技术有限公司 | Photoelectric detection device and display device |
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