CN111370525A - Photodetector, preparation method thereof, and photodetector device - Google Patents
Photodetector, preparation method thereof, and photodetector device Download PDFInfo
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- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
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Abstract
本发明公开了一种光电探测器、其制备方法及光电探测装置,本发明通过在衬底基板上直接形成感光半导体层,以及在形成有感光半导体层的衬底基板上形成电极层,即本发明采用在衬底基板上先形成感光器件,再形成开关晶体管,这样可以提高感光器件中各膜层的均匀性,从而提高光电探测器的整体均匀性,进而提高光电探测器的性能;另外,现有技术中是采用先形成开关晶体管再形成感光器件,这样感光半导体层对金属氧化物TFT的电学特性产生影响;而本发明在衬底基板上先形成感光半导体层,这样可以降低感光半导体层对金属氧化物TFT电学特性的影响;另外,采用本发明的结构还可以减少Mask工艺。
The invention discloses a photodetector, a preparation method thereof and a photoelectric detection device. In the invention, a photosensitive semiconductor layer is directly formed on a base substrate, and an electrode layer is formed on the base substrate formed with the photosensitive semiconductor layer, namely the present invention. In the invention, the photosensitive device is first formed on the base substrate, and then the switching transistor is formed, which can improve the uniformity of each film layer in the photosensitive device, thereby improving the overall uniformity of the photodetector, thereby improving the performance of the photodetector; in addition, In the prior art, the switching transistor is formed first and then the photosensitive device is formed, so that the photosensitive semiconductor layer has an influence on the electrical characteristics of the metal oxide TFT; and the present invention forms the photosensitive semiconductor layer on the substrate first, which can reduce the photosensitive semiconductor layer. Influence on the electrical characteristics of the metal oxide TFT; in addition, the use of the structure of the present invention can also reduce the Mask process.
Description
技术领域technical field
本发明涉及光电探测技术领域,特别涉及一种光电探测器、其制备方法及光电探测装置。The invention relates to the technical field of photoelectric detection, in particular to a photoelectric detector, a preparation method thereof and a photoelectric detection device.
背景技术Background technique
金属-半导体-金属(Metal-Semiconductor-Metal,MSM)型光电探测器利用金属与半导体界面间的肖特基势垒形成类似PN结的载流子耗尽区。半导体内由入射光产生的光生载流子在外加电场的作用下反向肖特基结耗尽区内发生漂移运动,迅速被光电探测器两端的电极收集。由于MSM结构光探测器具有结构简单、寄生电容小、响应速度快、制作工艺成本低等特点被广泛应用于各类光子和粒子探测器中。Metal-Semiconductor-Metal (MSM) photodetectors utilize the Schottky barrier between the metal and semiconductor interface to form a carrier depletion region similar to a PN junction. Under the action of an external electric field, the photogenerated carriers generated by the incident light in the semiconductor drift motion in the depletion region of the reverse Schottky junction, and are quickly collected by the electrodes at both ends of the photodetector. MSM structured light detectors are widely used in various photon and particle detectors due to their simple structure, small parasitic capacitance, fast response speed, and low manufacturing cost.
发明内容SUMMARY OF THE INVENTION
本发明实施例提供一种光电探测器、其制备方法及光电探测装置,用以提高光电探测器的整体均匀性,同时可以降低光电探测器的感光半导体层对金属氧化物TFT电学特性的影响,以及减少Mask工艺。Embodiments of the present invention provide a photodetector, a method for preparing the same, and a photodetector device, which are used to improve the overall uniformity of the photodetector, and at the same time, reduce the influence of the photosensitive semiconductor layer of the photodetector on the electrical characteristics of the metal oxide TFT, As well as reducing the Mask process.
本发明实施例提供了一种光电探测器,包括:衬底基板,直接位于所述衬底基板上的感光半导体层,位于所述感光半导体层背离所述衬底基板一侧的电极层。An embodiment of the present invention provides a photodetector, comprising: a base substrate, a photosensitive semiconductor layer directly on the base substrate, and an electrode layer located on a side of the photosensitive semiconductor layer away from the base substrate.
可选地,在具体实施时,在本发明实施例提供的上述光电探测器中,还包括:位于所述电极层背离所述衬底基板一侧的第一钝化层,以及位于所述第一钝化层背离所述衬底基板一侧的开关晶体管;所述开关晶体管的沟道层的材料为金属氧化物,且所述开关晶体管的漏极与所述第一电极电连接。Optionally, during specific implementation, the above-mentioned photodetector provided by the embodiment of the present invention further includes: a first passivation layer located on the side of the electrode layer away from the base substrate, and a first passivation layer located on the first passivation layer on the side of the electrode layer away from the base substrate. A switch transistor on the side of the passivation layer away from the base substrate; the material of the channel layer of the switch transistor is metal oxide, and the drain electrode of the switch transistor is electrically connected to the first electrode.
可选地,在具体实施时,在本发明实施例提供的上述光电探测器中,还包括:位于所述电极层和所述第一钝化层之间的第二钝化层,以及位于所述第一钝化层和所述第二钝化层之间的遮光层;所述遮光层在所述衬底基板上的正投影覆盖所述开关晶体管的沟道层在所述衬底基板上的正投影。Optionally, during specific implementation, the above-mentioned photodetector provided in the embodiment of the present invention further includes: a second passivation layer located between the electrode layer and the first passivation layer, and a second passivation layer located between the electrode layer and the first passivation layer. a light shielding layer between the first passivation layer and the second passivation layer; the orthographic projection of the light shielding layer on the base substrate covers the channel layer of the switching transistor on the base substrate orthographic projection.
相应地,本发明实施例还提供了一种光电探测装置,包括上述光电探测器。Correspondingly, an embodiment of the present invention also provides a photoelectric detection device, including the above-mentioned photodetector.
相应地,本发明实施例还提供了一种光电探测器的制备方法,包括:Correspondingly, an embodiment of the present invention also provides a method for preparing a photodetector, comprising:
在衬底基板上直接形成感光半导体层;forming a photosensitive semiconductor layer directly on the base substrate;
在形成有所述感光半导体层的衬底基板上形成电极层;其中,所述电极层包括相互绝缘且间隔设置的第一电极和第二电极。An electrode layer is formed on the base substrate on which the photosensitive semiconductor layer is formed; wherein, the electrode layer includes a first electrode and a second electrode which are insulated from each other and arranged at intervals.
可选地,在具体实施时,在本发明实施例提供的上述制备方法中,在形成所述感光半导体层之后,且在形成所述电极层之前,还包括:形成势垒增强层。Optionally, during specific implementation, in the above-mentioned preparation method provided by the embodiment of the present invention, after forming the photosensitive semiconductor layer and before forming the electrode layer, the method further includes: forming a potential barrier enhancement layer.
可选地,在具体实施时,在本发明实施例提供的上述制备方法中,所述形成势垒增强层,具体包括:Optionally, during specific implementation, in the above-mentioned preparation method provided by the embodiment of the present invention, the forming the barrier enhancement layer specifically includes:
采用化学气相沉积法在260℃-400℃温度下形成所述势垒增强层。The barrier enhancement layer is formed at a temperature of 260°C-400°C by chemical vapor deposition.
可选地,在具体实施时,在本发明实施例提供的上述制备方法中,在形成所述感光半导体层之后,且在形成所述势垒增强层之前,还包括:Optionally, during specific implementation, in the above-mentioned preparation method provided in the embodiment of the present invention, after forming the photosensitive semiconductor layer and before forming the potential barrier enhancement layer, further comprising:
在大于230℃的温度下对所述感光半导体层进行退火处理。The photosensitive semiconductor layer is annealed at a temperature greater than 230°C.
可选地,在具体实施时,在本发明实施例提供的上述制备方法中,还包括:Optionally, during specific implementation, in the above-mentioned preparation method provided in the embodiment of the present invention, it also includes:
在形成有所述电极层的衬底基板上形成第一钝化层;forming a first passivation layer on the base substrate formed with the electrode layer;
在形成有所述第一钝化层的衬底基板上形成开关晶体管;所述开关晶体管的沟道层的材料为金属氧化物,且所述开关晶体管的漏极与所述第一电极电连接。A switching transistor is formed on the base substrate on which the first passivation layer is formed; the material of the channel layer of the switching transistor is metal oxide, and the drain of the switching transistor is electrically connected to the first electrode .
可选地,在具体实施时,在本发明实施例提供的上述制备方法中,在形成所述第一钝化层之前,还包括:Optionally, during specific implementation, in the above-mentioned preparation method provided in the embodiment of the present invention, before forming the first passivation layer, the method further includes:
在形成有所述导电层的衬底基板上形成第二钝化层;forming a second passivation layer on the base substrate formed with the conductive layer;
在形成有所述第二钝化层的衬底基板上形成遮光层;所述遮光层在所述衬底基板上的正投影覆盖所述开关晶体管的沟道层在所述衬底基板上的正投影。A light shielding layer is formed on the base substrate on which the second passivation layer is formed; the orthographic projection of the light shielding layer on the base substrate covers the projection of the channel layer of the switching transistor on the base substrate Orthographic projection.
本发明有益效果如下:The beneficial effects of the present invention are as follows:
本发明实施例提供的光电探测器、其制备方法及光电探测装置,MSM型光电探测器一般包括感光器件以及与感光器件电连接的开关晶体管,本发明通过在衬底基板上直接形成感光半导体层,以及在形成有感光半导体层的衬底基板上形成电极层,即本发明采用在衬底基板上先形成感光器件,再形成开关晶体管,这样可以提高感光器件中各膜层的均匀性,从而提高光电探测器的整体均匀性,进而提高光电探测器的性能;另外,现有技术中是采用先形成开关晶体管再形成感光器件,由于感光器件的感光半导体层的材料为a-Si,现有技术在沉积a-Si层时,氢离子会向金属氧化物TFT的有源层漂移,从而使金属氧化物TFT的有源层产生施主缺陷,即金属氧化物TFT的有源层具有较多的电子,从而使金属氧化物TFT的有源层提前导体化,致使金属氧化物TFT的阈值电压发生漂移,因此现有技术制备光电探测器的方法中感光半导体层对金属氧化物TFT的电学特性产生影响;而本发明通过在衬底基板上先形成感光半导体层,这样感光半导体层不会对后续形成的金属氧化物TFT的有源层产生影响,从而可以降低光电探测器的感光半导体层对金属氧化物TFT电学特性的影响;另外,采用本发明的制备方法还可以减少Mask工艺。In the photodetector, its preparation method, and the photodetector device provided by the embodiments of the present invention, the MSM type photodetector generally includes a photosensitive device and a switching transistor electrically connected to the photosensitive device. In the present invention, a photosensitive semiconductor layer is directly formed on a substrate. , and the electrode layer is formed on the base substrate formed with the photosensitive semiconductor layer, that is, the present invention adopts the photosensitive device to be formed on the base substrate first, and then the switching transistor is formed, which can improve the uniformity of each film layer in the photosensitive device, thereby Improve the overall uniformity of the photodetector, thereby improving the performance of the photodetector; in addition, in the prior art, the switching transistor is formed first and then the photosensitive device is formed. Since the material of the photosensitive semiconductor layer of the photosensitive device is a-Si, the existing Technology When depositing the a-Si layer, hydrogen ions will drift to the active layer of the metal oxide TFT, so that the active layer of the metal oxide TFT will produce donor defects, that is, the active layer of the metal oxide TFT has more defects. Electrons, so that the active layer of the metal oxide TFT is conductive in advance, causing the threshold voltage of the metal oxide TFT to shift, so the photosensitive semiconductor layer in the method of preparing the photodetector in the prior art has an effect on the electrical characteristics of the metal oxide TFT. In the present invention, the photosensitive semiconductor layer is first formed on the base substrate, so that the photosensitive semiconductor layer will not affect the active layer of the subsequently formed metal oxide TFT, thereby reducing the photosensitive semiconductor layer of the photodetector. The influence of the electrical characteristics of the oxide TFT; in addition, the use of the preparation method of the present invention can also reduce the Mask process.
附图说明Description of drawings
图1为相关技术中的光电探测器的结构示意图;1 is a schematic structural diagram of a photodetector in the related art;
图2为对图1所示的结构在开关晶体管不同源漏电压下测得的伏安特性曲线;Fig. 2 is the volt-ampere characteristic curve measured under different source-drain voltages of the switching transistor for the structure shown in Fig. 1;
图3为本发明实施例提供的光电探测器的制备方法的流程示意图之一;3 is one of the schematic flow charts of a method for preparing a photodetector according to an embodiment of the present invention;
图4为本发明实施例提供的光电探测器的制备方法的流程示意图之二;FIG. 4 is a second schematic flowchart of a method for preparing a photodetector provided by an embodiment of the present invention;
图5为本发明实施例提供的光电探测器的制备方法的流程示意图之三;FIG. 5 is a third schematic flowchart of a method for manufacturing a photodetector according to an embodiment of the present invention;
图6为本发明实施例提供的光电探测器的制备方法的流程示意图之四;6 is a fourth schematic flowchart of a method for manufacturing a photodetector according to an embodiment of the present invention;
图7为本发明实施例提供的光电探测器的制备方法的流程示意图之五;FIG. 7 is a fifth schematic flowchart of a method for manufacturing a photodetector provided by an embodiment of the present invention;
图8为本发明实施例提供的光电探测器的剖面结构示意图;8 is a schematic cross-sectional structure diagram of a photodetector provided by an embodiment of the present invention;
图9为本发明实施例提供的光电探测器中电极层的俯视结构示意图。FIG. 9 is a schematic top-view structural diagram of an electrode layer in a photodetector according to an embodiment of the present invention.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。并且在不冲突的情况下,本发明中的实施例及实施例中的特征可以相互组合。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are some, but not all, embodiments of the present invention. Also, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict. Based on the described embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.
除非另外定义,本发明使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。Unless otherwise defined, technical or scientific terms used in the present invention should have the ordinary meaning as understood by one of ordinary skill in the art to which the present invention belongs. The terms "first," "second," and similar terms used herein do not denote any order, quantity, or importance, but are merely used to distinguish different components. "Comprises" or "comprising" and similar words mean that the elements or things appearing before the word encompass the elements or things recited after the word and their equivalents, but do not exclude other elements or things. Words like "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
需要注意的是,附图中各图形的尺寸和形状不反映真实比例,目的只是示意说明本发明内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。It should be noted that the dimensions and shapes of the figures in the accompanying drawings do not reflect the actual scale, and are only intended to illustrate the content of the present invention. And the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout.
目前,相关技术中的MSM型光电探测器,如图1所示,包括衬底基板01,位于衬底基板上的开关晶体管02(为了提高迁移率,开关晶体管02为金属氧化物型晶体管),位于开关晶体管02上的第一钝化层03,位于第一钝化层03上的第一平坦层04,位于第一平坦层04上的缓冲层05,位于缓冲层05上的遮光层06,位于遮光层06上的第二平坦层07,位于第二平坦层07上的第二钝化层08,位于第二钝化层08上的电极层09,位于电极层09上的势垒增强层10,位于势垒增强层10上的感光半导体层11,以及位于感光半导体层11上的第三钝化层12。现有技术中图1所示的光电探测器在制作时,先在衬底基板01上制作开关晶体管02,再在开关晶体管02上形成由电极层09、势垒增强层10和感光半导体层11构成的感光器件,由于感光半导体层11的材料为a-Si,现有技术在沉积a-Si层时,沉积材料包括硅烷和氢气等离子体,在沉积过程中氢离子会向开关晶体管02的有源层漂移,从而使开关晶体管02的有源层产生施主缺陷,即开关晶体管02的有源层具有较多的电子,从而使开关晶体管02的有源层提前导体化,致使开关晶体管02的阈值电压发生漂移,因此现有技术制备光电探测器的方法中感光半导体层11对开关晶体管02的电学特性产生影响,如图2所示,图2为以图1所示的光电探测器为例进行伏安特性曲线测试,其中,横坐标代表电压V,纵坐标代表电流I,分别对开关晶体管02的源漏电压Vds为0.1V、5.1V、10.1V和15.1V时进行了测试,采用定电流法,在电流I=1.0E-9时与0.1V、5.1V、10.1V和15.1V对应的四条曲线的交点即为开关晶体管02的阈值电压Vth,可以得到Vds=0.1V时对应的阈值电压Vth为-11.739,Vds=5.1V时对应的阈值电压Vth为-12.213,Vds=10.1V时对应的阈值电压Vth为-12.392,Vds=15.1V时对应的阈值电压Vth为-12.425,由于开关晶体管02的阈值电压Vth一般接近0,因此现有技术制备光电探测器的方法中感光半导体层11对开关晶体管02的电学特性产生了影响。另外,图1中的电极层09一般包括相互绝缘且独立设置的叉指电极,这样导致在电极层09上制作的势垒增强层10不平坦,由于势垒增强层10的厚度较薄,厚度难控制,导致光电探测器的均匀性不佳,因此导致器件性能不佳;再者,由于制作完图1中的开关晶体管02和遮光层06均需要设置一层平坦层,平坦层的材料一般为树脂材料,不耐高温,因此后续沉积的势垒增强层10和感光半导体层11无法采用高温沉积,膜质较差,势垒增强层10内部缺陷较多,因此感光器件的暗电流较大,从而导致光电流与暗电流的对比降低,进而导致灵敏度降低;并且,在制作图1的光电探测器时,需要沉积两次平坦层,因此整体上制作工艺的Mask工艺较多,制作工艺流程较复杂。At present, the MSM type photodetector in the related art, as shown in FIG. 1, includes a
有鉴于此,本发明实施例提供了一种光电探测器的制备方法,如图3所示,可以包括:In view of this, an embodiment of the present invention provides a method for preparing a photodetector, as shown in FIG. 3 , which may include:
S101、在衬底基板上直接形成感光半导体层;S101, directly forming a photosensitive semiconductor layer on a base substrate;
S102、在形成有感光半导体层的衬底基板上形成电极层;其中,电极层包括相互绝缘且间隔设置的第一电极和第二电极。S102 , forming an electrode layer on the base substrate on which the photosensitive semiconductor layer is formed; wherein, the electrode layer includes a first electrode and a second electrode that are insulated from each other and arranged at intervals.
本发明实施例提供的上述光电探测器的制备方法,MSM型光电探测器一般包括感光器件以及与感光器件电连接的开关晶体管,本发明通过在衬底基板上直接形成感光半导体层,以及在形成有感光半导体层的衬底基板上形成电极层,即本发明采用在衬底基板上先形成感光器件,再形成开关晶体管,这样可以提高感光器件中各膜层的均匀性,从而提高光电探测器的整体均匀性,进而提高光电探测器的性能;另外,现有技术中是采用先形成开关晶体管再形成感光器件,由于感光器件的感光半导体层的材料为a-Si,现有技术在沉积a-Si层时,氢离子会向金属氧化物TFT的有源层漂移,从而使金属氧化物TFT的有源层产生施主缺陷,即金属氧化物TFT的有源层具有较多的电子,从而使金属氧化物TFT的有源层提前导体化,致使金属氧化物TFT的阈值电压发生漂移,因此现有技术制备光电探测器的方法中感光半导体层对金属氧化物TFT的电学特性产生影响;而本发明通过在衬底基板上先形成感光半导体层,这样感光半导体层不会对后续形成的金属氧化物TFT的有源层产生影响,从而可以降低光电探测器的感光半导体层对金属氧化物TFT电学特性的影响;另外,采用本发明的制备方法还可以减少Mask工艺。In the preparation method of the above-mentioned photodetector provided by the embodiment of the present invention, the MSM type photodetector generally includes a photosensitive device and a switching transistor electrically connected to the photosensitive device. The electrode layer is formed on the base substrate with the photosensitive semiconductor layer, that is, the present invention adopts the method of forming the photosensitive device on the base substrate first, and then forming the switching transistor, which can improve the uniformity of each film layer in the photosensitive device, thereby improving the photodetector. In addition, in the prior art, the switching transistor is formed first and then the photosensitive device is formed. Since the material of the photosensitive semiconductor layer of the photosensitive device is a-Si, the prior art is in the deposition of a-Si. -Si layer, hydrogen ions will drift to the active layer of the metal oxide TFT, so that the active layer of the metal oxide TFT produces donor defects, that is, the active layer of the metal oxide TFT has more electrons, so that the The active layer of the metal oxide TFT is conductive in advance, resulting in a shift in the threshold voltage of the metal oxide TFT. Therefore, in the method for preparing a photodetector in the prior art, the photosensitive semiconductor layer has an impact on the electrical characteristics of the metal oxide TFT; The invention firstly forms a photosensitive semiconductor layer on the base substrate, so that the photosensitive semiconductor layer will not affect the active layer of the metal oxide TFT formed subsequently, so that the photosensitive semiconductor layer of the photodetector can reduce the electrical conductivity of the metal oxide TFT. In addition, using the preparation method of the present invention can also reduce the Mask process.
需要说明的是,本发明实施例提供的光电探测器为MSM型光电探测器。It should be noted that the photodetector provided by the embodiment of the present invention is an MSM type photodetector.
在具体实施时,在本发明实施例提供的上述制备方法中,如图4所示,在形成感光半导体层之后,且在形成电极层之前,还包括:During specific implementation, in the above-mentioned preparation method provided by the embodiment of the present invention, as shown in FIG. 4 , after forming the photosensitive semiconductor layer and before forming the electrode layer, it further includes:
S102’、形成势垒增强层;这样相当于增加了MSM型光电探测器的感光半导体层与电极层之间的厚度,提高了界面势能,从而提高势垒,因此可以降低MSM型光电探测器的暗电流,提高MSM型光电探测器的灵敏度。S102', forming a potential barrier enhancement layer; this is equivalent to increasing the thickness between the photosensitive semiconductor layer and the electrode layer of the MSM type photodetector, increasing the interface potential energy, thereby increasing the potential barrier, thus reducing the MSM type photodetector. Dark current to improve the sensitivity of MSM-type photodetectors.
在具体实施时,在本发明实施例提供的上述制备方法中,形成势垒增强层,具体可以包括:During specific implementation, in the above-mentioned preparation method provided by the embodiment of the present invention, forming a potential barrier enhancement layer may specifically include:
采用化学气相沉积法在260℃-400℃温度下形成势垒增强层。由于本发明是先形成感光器件的各膜层,再形成开关晶体管(后面介绍),因此无需制作材料为树脂的平坦层,一方面势垒增强层可以在高温下沉积,如260℃-400℃,该温度下形成的势垒增强层的膜质较好,且势垒增强层内部缺陷较少,因此可以进一步降低光电探测器的暗电流,从而进一步提高MSM型光电探测器的灵敏度;另一方面,减少制作平坦层的Mask,从而降低制作流程的复杂度。The barrier enhancement layer is formed at a temperature of 260°C-400°C by chemical vapor deposition. Since the present invention forms each film layer of the photosensitive device first, and then forms the switching transistor (described later), there is no need to make a flat layer made of resin. On the one hand, the barrier enhancement layer can be deposited at high temperature, such as 260°C-400°C , the film quality of the barrier enhancement layer formed at this temperature is better, and the internal defects of the barrier enhancement layer are less, so the dark current of the photodetector can be further reduced, thereby further improving the sensitivity of the MSM photodetector; another On the one hand, the Mask for making the flat layer is reduced, thereby reducing the complexity of the production process.
在具体实施时,在本发明实施例提供的上述制备方法中,如图5所示,在形成感光半导体层之后,且在形成势垒增强层之前,还包括:During specific implementation, in the above-mentioned preparation method provided by the embodiment of the present invention, as shown in FIG. 5 , after forming the photosensitive semiconductor layer and before forming the barrier enhancement layer, the method further includes:
S101’、在大于230℃的温度下对感光半导体层进行退火处理。由于本发明是先形成感光器件的各膜层,再形成开关晶体管(后面介绍),因此无需制作材料为树脂的平坦层,一方面感光半导体层可以在高温下沉积,如在大于230℃的温度下沉积,这样可以消除沉积时残留的氢离子,从而减少悬挂键,因此该温度下形成的感光半导体层的膜质较好,内部缺陷较少,因此可以更进一步降低光电探测器的暗电流,从而更进一步提高MSM型光电探测器的灵敏度;另一方面,减少制作平坦层的Mask,从而降低制作流程的复杂度。S101', annealing the photosensitive semiconductor layer at a temperature higher than 230°C. Since the present invention forms each film layer of the photosensitive device first, and then forms the switching transistor (described later), there is no need to make a flat layer made of resin. This can eliminate the residual hydrogen ions during deposition, thereby reducing dangling bonds, so the photosensitive semiconductor layer formed at this temperature has better film quality and fewer internal defects, so it can further reduce the dark current of the photodetector, In this way, the sensitivity of the MSM photodetector is further improved; on the other hand, the Mask for fabricating the flat layer is reduced, thereby reducing the complexity of the fabrication process.
在具体实施时,本发明实施例提供的上述制备方法可以至少比相关技术中图1所示的结构减少制作两层平坦层的Mask工艺。During specific implementation, the above-mentioned preparation method provided by the embodiment of the present invention can at least reduce the Mask process of fabricating two flat layers compared with the structure shown in FIG. 1 in the related art.
在具体实施时,在本发明实施例提供的上述制备方法中,如图6所示,还包括:During specific implementation, in the above-mentioned preparation method provided in the embodiment of the present invention, as shown in FIG. 6 , it also includes:
S103、在形成有电极层的衬底基板上形成第一钝化层;S103, forming a first passivation layer on the base substrate on which the electrode layer is formed;
具体地,采用高温150℃-400℃(优选370℃)下沉积第一钝化层,在该温度下沉积的第一钝化层的膜质较好,可以减少沉积感光半导体层时氢离子扩散到后续形成的开关晶体管的沟道层的概率,从而不会影响开关晶体管的电学特性;具体地,第一钝化层的材料可以为SiO2,当然也可以为其他绝缘材料。Specifically, the first passivation layer is deposited at a high temperature of 150°C-400°C (preferably 370°C). The film quality of the first passivation layer deposited at this temperature is better, which can reduce the diffusion of hydrogen ions during the deposition of the photosensitive semiconductor layer. The probability of reaching the channel layer of the subsequently formed switching transistor will not affect the electrical characteristics of the switching transistor; specifically, the material of the first passivation layer can be SiO 2 , and of course can also be other insulating materials.
S104、在形成有第一钝化层的衬底基板上形成开关晶体管;为了提高迁移率,开关晶体管的沟道层的材料为金属氧化物,如氧化铟镓锌(IGZO)等金属氧化物;且开关晶体管的漏极与第一电极电连接。S104, forming a switching transistor on the base substrate formed with the first passivation layer; in order to improve the mobility, the material of the channel layer of the switching transistor is a metal oxide, such as indium gallium zinc oxide (IGZO) and other metal oxides; And the drain of the switching transistor is electrically connected with the first electrode.
在具体实施时,在本发明实施例提供的上述制备方法中,如图7所示,在形成第一钝化层之前,还包括:During specific implementation, in the above-mentioned preparation method provided by the embodiment of the present invention, as shown in FIG. 7 , before forming the first passivation layer, the method further includes:
S103’、在形成有导电层的衬底基板上形成第二钝化层;S103', forming a second passivation layer on the base substrate formed with the conductive layer;
具体地,采用高温150℃-400℃(优选370℃)下沉积第二钝化层,在该温度下沉积的第二钝化层的膜质较好,可以进一步减少沉积感光半导体层时氢离子扩散到后续形成的开关晶体管的沟道层的概率,从而进一步不会影响开关晶体管的电学特性;具体地,第二钝化层的材料也可以为SiO2,当然也可以为其他绝缘材料。Specifically, the second passivation layer is deposited at a high temperature of 150° C. to 400° C. (preferably 370° C.). The film quality of the second passivation layer deposited at this temperature is better, which can further reduce hydrogen ions when depositing the photosensitive semiconductor layer. The probability of diffusing into the channel layer of the subsequently formed switching transistor will not further affect the electrical characteristics of the switching transistor; specifically, the material of the second passivation layer can also be SiO 2 , and of course other insulating materials.
S103”、在形成有第二钝化层的衬底基板上形成遮光层;遮光层在衬底基板上的正投影覆盖开关晶体管的沟道层在衬底基板上的正投影。这样可以通过遮光层遮光,避免入射的光照射到开关晶体管的沟道层上,进一步提高探测灵敏度。S103", forming a light-shielding layer on the base substrate formed with the second passivation layer; the orthographic projection of the light-shielding layer on the base substrate covers the orthographic projection of the channel layer of the switching transistor on the base substrate. The layer shields light to prevent incident light from irradiating on the channel layer of the switching transistor, thereby further improving the detection sensitivity.
综上,采用本发明实施例提供的上述制备方法制备光电探测器时,各膜层的制备工艺的条件如高温下沉积、减少Mask等,因此扩大了制备工艺窗口。To sum up, when the photodetector is fabricated by the aforementioned fabrication method provided in the embodiment of the present invention, the fabrication process conditions of each film layer are deposition at high temperature, reduction of Mask, etc., thus expanding the fabrication process window.
基于同一发明构思,本发明实施例还提供了一种采用上述光电探测器的制备方法制得的光电探测器,如图8所示,包括:衬底基板1,直接位于衬底基板1上的感光半导体层2,位于感光半导体层2背离衬底基板1一侧的电极层3;电极层3包括相互绝缘且间隔设置的第一电极31和第二电极32。Based on the same inventive concept, an embodiment of the present invention also provides a photodetector prepared by using the above-mentioned preparation method for a photodetector, as shown in FIG. The
在具体实施时,在本发明实施例提供的上述光电探测器中,如图8所示,光L从感光半导体层2背离衬底基板1一侧照射到感光半导体层2上。一般入射光进入到感光半导体层2中产生光生载流子,随着光在感光半导体层2中不断的向深处传播,光强变弱。现有中,为了使感光半导体层2充分吸收光,需要将感光半导体层2的膜层制作的较厚,这样可以使来自外部的光均被感光半导体层2吸收。但是随着感光半导体层2厚度的增加,导致感光半导体层2中光生载流子浓度分布在垂直于感光半导体层2的方向上的梯度变化明显,不利于光利用率。因此,为了降低感光半导体层2的厚度,在具体实施时,在本发明实施例提供的上述光电探测器中,第一电极31和第二电极32的材料可以为高反射性的不透明金属材料,如采用Mo、Al、Cu等金属材料沉积,电极层3的厚度可以为50nm-1um,优选220nm。In specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, as shown in FIG. 8 , light L is irradiated onto the
在具体实施时,在本发明实施例提供的上述光电探测器中,感光半导体层2的材料可以为a-Si。为了提高感光半导体层2与光的直接接触面积,增加感光半导体层2对光的吸收,在具体实施时,在本发明实施例提供的上述光电探测器中,如图9所示,第一电极31与第二电极32组成交叉指形电极。During specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the
在具体实施时,在本发明实施例提供的上述光电探测器中,如图8所示,还包括:位于电极层3背离衬底基板1一侧的第一钝化层4,以及位于第一钝化层4背离衬底基板1一侧的开关晶体管5;开关晶体管5的沟道层51的材料为金属氧化物,且开关晶体管5的漏极52与第一电极31电连接。In a specific implementation, the above-mentioned photodetector provided in the embodiment of the present invention, as shown in FIG. 8 , further includes: a
示例性地,在具体实施时,在本发明实施例提供的上述光电探测器中,如图8所示,开关晶体管5可以包括:沟道层51,位于沟道层51上方的栅绝缘层53,位于栅绝缘层53上方的栅极54,位于栅极54上方与沟道层51电连接的源极55和漏极52。该光电探测器还包括位于栅极54与源极55和漏极52之间的层间绝缘层6。当然,在实际应用中,开关晶体管5的结构还可以采用其他结构,在此不作限定。Exemplarily, during specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, as shown in FIG. , the
在具体实施时,在本发明实施例提供的上述光电探测器中,沟道层51的材料可以为IGZO,厚度可以为20nm-100nm,优选为40nm。During specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the
在具体实施时,在本发明实施例提供的上述光电探测器中,栅绝缘层53的材料可以为SiO,厚度可以为50nm-500nm,优选为150nm。During specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the
在具体实施时,在本发明实施例提供的上述光电探测器中,栅极54可以采用Mo、Al、Cu等金属材料沉积,栅极54的厚度可以为50nm-1um,优选220nm。During specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the
在具体实施时,在本发明实施例提供的上述光电探测器中,层间绝缘层6的材料可以为SiO,厚度可以为50nm-1um,优选为450nm。During specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the interlayer insulating
在具体实施时,在本发明实施例提供的上述光电探测器中,源极55和漏极52可以采用Mo、Al、Cu等金属材料沉积,源极55和漏极52的厚度可以为50nm-1um,优选220nm。In specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the
在具体实施时,在本发明实施例提供的上述光电探测器中,如图8所示,还包括:位于电极层3和第一钝化层4之间的第二钝化层7,以及位于第一钝化层4和第二钝化层7之间的遮光层8;遮光层8在衬底基板1上的正投影覆盖开关晶体管5的沟道层51在衬底基板1上的正投影。这样可以通过遮光层8遮光,避免入射的光照射到开关晶体管5的沟道层51上,进一步提高探测灵敏度。During specific implementation, the above-mentioned photodetector provided in the embodiment of the present invention, as shown in FIG. 8 , further includes: a
在具体实施时,在本发明实施例提供的上述光电探测器中,第一钝化层4和第二钝化层7的材料均可以为SiO2,厚度均可以为100nm-1um,均优选为300nm。In specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the
另外,可以在高温150℃-400℃(优选370℃)下沉积第一钝化层4和第二钝化层7,在该温度下沉积的第一钝化层4和第二钝化层7的膜质较好,可以进一步减少沉积感光半导体层2时氢离子扩散到后续形成的开关晶体管5的沟道层51的概率,从而进一步不会影响开关晶体管5的电学特性。In addition, the
在具体实施时,在本发明实施例提供的上述光电探测器中,遮光层8可以采用Mo、Al、Cu等金属材料沉积,遮光层8的厚度可以为50nm-1um,优选220nm。In specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the
在具体实施时,为了防止后续工艺对开关晶体管的源极和漏极造成影响,在本发明实施例提供的上述光电探测器中,如图8所示,还包括覆盖开关晶体管5的第三钝化层9,第三钝化层9可以保护源极55和漏极52。During specific implementation, in order to prevent subsequent processes from affecting the source and drain of the switching transistor, in the above-mentioned photodetector provided in the embodiment of the present invention, as shown in FIG. The third passivation layer 9 can protect the
在具体实施时,在本发明实施例提供的上述光电探测器中,第三钝化层9的材料可以为SiO2,厚度可以为50nm-1um,优选为300nm。During specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the material of the third passivation layer 9 may be SiO 2 , and the thickness may be 50nm-1um, preferably 300nm.
在具体实施时,在本发明实施例提供的上述光电探测器中,如图8所示,还包括位于衬底基板1入光测的闪烁体10,闪烁体10的材料可以为Gd2O2S:Tb(GOS)或碘化铯(CSI)等能够将辐射光转换成可见光的材料。In specific implementation, the above-mentioned photodetector provided in the embodiment of the present invention, as shown in FIG. 8 , further includes a
在具体实施时,在本发明实施例提供的上述光电探测器中,漏极52通过贯穿层间绝缘层6、第一钝化层4和第二钝化层7的过孔与第一电极31电连接。In specific implementation, in the above-mentioned photodetector provided by the embodiment of the present invention, the
下面通过具体实施例对本发明实施例提供的制备方法进行说明。The preparation methods provided by the embodiments of the present invention will be described below through specific examples.
本发明实施例提供的制备方法可以包括如下步骤:The preparation method provided in the embodiment of the present invention may include the following steps:
(1)在衬底基板1上依次形成感光半导体层2、势垒增强层4、以及电极层3,电极层3包括相互绝缘且间隔设置的第一电极31和第二电极32,如图8所示。(1) A
(2)在形成有电极层3的衬底基板1上形成第二钝化层7、遮光层8和第一钝化层4,如图8所示。(2) The
(3)在形成第一钝化层4的衬底基板1上形成开关晶体管5,形成开关晶体管依次包括形成沟道层51、栅绝缘层53、栅极54,形成覆盖栅极54的层间绝缘层6,形成源极55和漏极52,源极55和漏极52通过贯穿层间绝缘层6的过孔与沟道层51电连接,漏极52通过贯穿层间绝缘层6、第一钝化层4和第二钝化层7的过孔与第一电极31电连接,如图8所示。(3) The switching
(4)在形成开关晶体管5的衬底基板1上形成第三钝化层9,如图8所示。(4) The third passivation layer 9 is formed on the
(5)将闪烁体10贴附在衬底基板1的入光测,如图8所示。(5) Incident light measurement by attaching the
基于同一发明构思,本发明实施例还提供了一种光电探测装置,包括上述光电探测器。该光电探测装置解决问题的原理与前述光电探测器相似,因此该光电探测装置的实施可以参见前述光电探测器的实施,重复之处在此不再赘述。Based on the same inventive concept, an embodiment of the present invention further provides a photodetector device, including the above photodetector. The principle of solving the problem of the photoelectric detection device is similar to that of the foregoing photodetector, so the implementation of the photoelectric detection device may refer to the implementation of the foregoing photodetector, and the repetition will not be repeated here.
本发明实施例提供的光电探测器、其制备方法及光电探测装置,MSM型光电探测器一般包括感光器件以及与感光器件电连接的开关晶体管,本发明通过在衬底基板上直接形成感光半导体层,以及在形成有感光半导体层的衬底基板上形成电极层,即本发明采用在衬底基板上先形成感光器件,再形成开关晶体管,这样可以提高感光器件中各膜层的均匀性,从而提高光电探测器的整体均匀性,进而提高光电探测器的性能;另外,现有技术中是采用先形成开关晶体管再形成感光器件,由于感光器件的感光半导体层的材料为a-Si,现有技术在沉积a-Si层时,氢离子会向金属氧化物TFT的有源层漂移,从而使金属氧化物TFT的有源层产生施主缺陷,即金属氧化物TFT的有源层具有较多的电子,从而使金属氧化物TFT的有源层提前导体化,致使金属氧化物TFT的阈值电压发生漂移,因此现有技术制备光电探测器的方法中感光半导体层对金属氧化物TFT的电学特性产生影响;而本发明通过在衬底基板上先形成感光半导体层,这样感光半导体层不会对后续形成的金属氧化物TFT的有源层产生影响,从而可以降低光电探测器的感光半导体层对金属氧化物TFT电学特性的影响;另外,采用本发明的制备方法还可以减少Mask工艺。In the photodetector, its preparation method, and the photodetector device provided by the embodiments of the present invention, the MSM type photodetector generally includes a photosensitive device and a switching transistor electrically connected to the photosensitive device. In the present invention, a photosensitive semiconductor layer is directly formed on a substrate. , and the electrode layer is formed on the base substrate formed with the photosensitive semiconductor layer, that is, the present invention adopts the photosensitive device to be formed on the base substrate first, and then the switching transistor is formed, which can improve the uniformity of each film layer in the photosensitive device, thereby Improve the overall uniformity of the photodetector, thereby improving the performance of the photodetector; in addition, in the prior art, the switching transistor is formed first and then the photosensitive device is formed. Since the material of the photosensitive semiconductor layer of the photosensitive device is a-Si, the existing Technology When depositing the a-Si layer, hydrogen ions will drift to the active layer of the metal oxide TFT, so that the active layer of the metal oxide TFT will produce donor defects, that is, the active layer of the metal oxide TFT has more defects. Electrons, so that the active layer of the metal oxide TFT is conductive in advance, causing the threshold voltage of the metal oxide TFT to shift, so the photosensitive semiconductor layer in the method of preparing the photodetector in the prior art has an effect on the electrical characteristics of the metal oxide TFT. In the present invention, the photosensitive semiconductor layer is first formed on the base substrate, so that the photosensitive semiconductor layer will not affect the active layer of the subsequently formed metal oxide TFT, thereby reducing the photosensitive semiconductor layer of the photodetector. The influence of the electrical characteristics of the oxide TFT; in addition, the use of the preparation method of the present invention can also reduce the Mask process.
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Thus, provided that these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101937861A (en) * | 2007-11-01 | 2011-01-05 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor substrate, and manufacturing method of semiconductor device |
CN104009158A (en) * | 2013-02-22 | 2014-08-27 | 三星电子株式会社 | Photoelectronic device and image sensor |
CN104977599A (en) * | 2014-04-11 | 2015-10-14 | 株式会社东芝 | Photodetector |
WO2016025463A1 (en) * | 2014-08-15 | 2016-02-18 | Perkinelmer Holdings, Inc. | Radiation imaging device with metal-insulator-semiconductor photodetector and thin film transistor |
CN107342347A (en) * | 2017-07-05 | 2017-11-10 | 京东方科技集团股份有限公司 | A kind of photodetector and preparation method thereof |
CN109273561A (en) * | 2018-11-20 | 2019-01-25 | 电子科技大学 | Method for preparing MSM photodetector |
-
2020
- 2020-03-13 CN CN202010176782.XA patent/CN111370525B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101937861A (en) * | 2007-11-01 | 2011-01-05 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor substrate, and manufacturing method of semiconductor device |
CN104009158A (en) * | 2013-02-22 | 2014-08-27 | 三星电子株式会社 | Photoelectronic device and image sensor |
CN104977599A (en) * | 2014-04-11 | 2015-10-14 | 株式会社东芝 | Photodetector |
WO2016025463A1 (en) * | 2014-08-15 | 2016-02-18 | Perkinelmer Holdings, Inc. | Radiation imaging device with metal-insulator-semiconductor photodetector and thin film transistor |
CN107342347A (en) * | 2017-07-05 | 2017-11-10 | 京东方科技集团股份有限公司 | A kind of photodetector and preparation method thereof |
CN109273561A (en) * | 2018-11-20 | 2019-01-25 | 电子科技大学 | Method for preparing MSM photodetector |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115000204A (en) * | 2022-05-25 | 2022-09-02 | 武汉华星光电半导体显示技术有限公司 | Photodetection device and display device |
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