CN112366235A - Waveguide type germanium-based photoelectric detector and preparation method thereof - Google Patents

Waveguide type germanium-based photoelectric detector and preparation method thereof Download PDF

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Publication number
CN112366235A
CN112366235A CN201910677507.3A CN201910677507A CN112366235A CN 112366235 A CN112366235 A CN 112366235A CN 201910677507 A CN201910677507 A CN 201910677507A CN 112366235 A CN112366235 A CN 112366235A
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Prior art keywords
germanium
distributed bragg
silicon
bragg reflector
silicon waveguide
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汪巍
方青
涂芝娟
曾友宏
蔡艳
余明斌
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Shanghai Industrial Utechnology Research Institute
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Shanghai Industrial Utechnology Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a waveguide type germanium-based photoelectric detector integrated by a silicon waveguide distributed Bragg reflector and a preparation method thereof, wherein the waveguide type germanium-based photoelectric detector comprises: a germanium-based photodetector; a silicon waveguide structure connected to a first end of the germanium-based photodetector; and the silicon waveguide distributed Bragg reflector is connected to the second end of the germanium-based photoelectric detector. Compared with the traditional waveguide type detector, the invention introduces the silicon waveguide distributed Bragg reflector structure at the rear end of the germanium photoelectric detector, so that light rays are reflected to enter the germanium photoelectric detector again, and more efficient light absorption efficiency can be realized, thereby effectively reducing the length of the detector and realizing the preparation of the photoelectric detector with low dark current, low capacitance and high responsivity.

Description

Waveguide type germanium-based photoelectric detector and preparation method thereof
Technical Field
The invention belongs to the field of semiconductor manufacturing and optical communication, and particularly relates to a waveguide type germanium-based photoelectric detector integrated with a silicon waveguide distributed Bragg reflector and a preparation method thereof.
Background
A photodetector refers to a device that causes a change in the conductivity of an irradiated material due to radiation. The photoelectric detector has wide application in various fields of military and national economy. The infrared radiation sensor is mainly used for ray measurement and detection, industrial automatic control, photometric measurement and the like in visible light or near infrared wave bands; the infrared band is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing and the like.
Silicon-based germanium photodetectors are widely used in the fields of optical communication, optical interconnection, optical sensing and the like because of being compatible with CMOS (complementary metal oxide semiconductor) process and convenient to integrate. Compared with a surface incidence type detector, the waveguide type detector can avoid the problem that the speed and the quantum efficiency of the optical detector are mutually restricted, can be integrated with a waveguide optical path, is easier to realize high speed and high responsivity, and is one of core devices for realizing high speed optical communication and optical interconnection chips. Limited by the relatively low absorption coefficient of germanium materials in the C, L communication band, the detector must be long enough to achieve high responsivity, which makes further optimization of the detector's capacitance and dark current difficult.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector and a method for manufacturing the same, which are used to solve the problem of low absorption efficiency of the waveguide-type germanium photodetector in the prior art.
To achieve the above and other related objects, the present invention provides a silicon waveguide distributed bragg reflector integrated waveguide type germanium-based photodetector, comprising: a germanium-based photodetector; a silicon waveguide structure connected to a first end of the germanium-based photodetector; and the silicon waveguide distributed Bragg reflector is connected to the second end of the germanium-based photoelectric detector.
Optionally, the silicon waveguide distributed bragg reflector is implemented by changing a width dimension or/and a height dimension of the silicon waveguide.
Optionally, the incident light of the silicon waveguide structure enters the germanium-based photodetector through direct coupling or evanescent coupling.
Optionally, the reflected light of the silicon waveguide distributed bragg reflector enters the germanium-based photodetector through direct coupling or evanescent coupling.
Optionally, the germanium-based photodetector comprises: a lower contact layer; a germanium-based absorption layer on the lower contact layer; an upper contact layer on the germanium-based absorption layer; and the lower electrode and the upper electrode are respectively positioned on the lower contact layer and the upper contact layer.
Optionally, the lower contact layer has mesa contacts located outside both sides of the germanium-based absorption layer, and the lower electrode is formed on the mesa contacts.
Further, the material of the germanium-based absorption layer comprises one of SiGe, Ge, GeSn and GePb.
The invention also provides a preparation method of the waveguide type germanium-based photoelectric detector integrated by the silicon waveguide distributed Bragg reflector, which comprises the following steps: step 1), providing an SOI substrate, and etching a silicon waveguide structure and a silicon waveguide distributed Bragg reflector on top silicon of the SOI substrate; step 2), depositing a dielectric layer, defining a germanium-based material selective epitaxial region in the dielectric layer by adopting a photoetching process, further etching the top silicon of the SOI substrate to form the germanium-based material selective epitaxial region, reserving a top silicon bottom layer with partial thickness at the bottom of the germanium-based material selective epitaxial region, and forming lower contact layers in the top silicon bottom layer and top silicon bosses on two sides by adopting an ion implantation and annealing method; step 3), selectively epitaxially growing a germanium-based material layer in the germanium-based material selective epitaxial region, forming an upper contact layer in the germanium-based material layer by adopting an ion implantation and annealing method, and etching the germanium-based material layer by adopting a photoetching method to prepare a germanium-based absorption layer; and 4), defining an upper electrode area and a lower electrode area in the upper contact layer and the lower contact layer by photoetching and etching methods, and forming an upper electrode and a lower electrode.
Optionally, the height of the germanium-based material layer is greater than the height of the germanium-based material selective epitaxial region.
Optionally, both ends of the germanium-based material layer selectively epitaxially grown in step 3) are in direct contact with the silicon waveguide structure and the silicon waveguide distributed bragg reflector, respectively.
As described above, the waveguide type germanium-based photodetector integrated with the silicon waveguide distributed bragg reflector and the preparation method thereof of the present invention have the following beneficial effects:
compared with the traditional waveguide type detector, the invention introduces the silicon waveguide distributed Bragg reflector structure at the rear end of the germanium photoelectric detector, so that light rays are reflected to enter the germanium photoelectric detector again, and more efficient light absorption efficiency can be realized, thereby effectively reducing the length of the detector and realizing the preparation of the photoelectric detector with low dark current, low capacitance and high responsivity.
Drawings
Fig. 1 to fig. 3 are schematic structural diagrams of a waveguide-type ge-based photodetector integrated with a silicon waveguide distributed bragg reflector according to an embodiment of the present invention, where fig. 2 is a schematic sectional structural diagram at a-a 'in fig. 1, and fig. 3 is a schematic sectional structural diagram at B-B' in fig. 1.
Fig. 4 is a schematic structural diagram showing steps of a method for manufacturing a waveguide-type ge-based photodetector integrated with a silicon waveguide distributed bragg reflector according to an embodiment of the present invention.
Description of the element reference numerals
10 silicon waveguide structure
20 germanium-based photodetector
201 bottom silicon layer
202 insulating layer
203 top silicon layer
204 germanium-based material selective epitaxial region
205 lower contact layer
206 germanium-based absorption layer
207 upper contact layer
208 lower electrode
209 upper electrode
210 boss contact part
30 silicon waveguide distributed Bragg reflector
301 strip silicon waveguide
302 projection
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 1 to 3, wherein fig. 2 is a schematic cross-sectional structure at a-a 'of fig. 1, and fig. 3 is a schematic cross-sectional structure at B-B' of fig. 1. The present embodiment provides a waveguide-type germanium-based photodetector 20 integrated with a silicon waveguide distributed bragg reflector 30, where the waveguide-type germanium-based photodetector 20 includes a germanium-based photodetector 20, a silicon waveguide structure 10, and a silicon waveguide distributed bragg reflector 30.
As shown in fig. 2, the ge-based photodetector 20 includes a lower contact layer 205, a ge-based absorption layer 206, an upper contact layer 207, a lower electrode 208, and an upper electrode 209.
The germanium-based photodetector 20 is manufactured based on an SOI substrate, wherein the top silicon of the SOI substrate is partially removed to form a germanium-based material selective epitaxial region 204, a partial thickness of top silicon bottom layer is reserved at the bottom of the germanium-based material selective epitaxial region 204, and the lower contact layer 205 is formed on the top silicon bottom layer through an ion implantation and annealing method. In order to further simplify the subsequent electrode manufacturing process, the top silicon mesas on both sides of the top silicon bottom layer may be subjected to ion implantation and annealing methods to serve as the lower contact layer 205 together with the top silicon bottom layer, i.e., the lower contact layer 205 has mesa contacts 210 located outside both sides of the germanium-based absorption layer 206, and the lower electrode 208 is formed on the mesa contacts 210. Because the boss contact 210 is located on the top surface of the SOI substrate, compared with the fabrication of an electrode on the bottom silicon layer of the recessed top layer, the process difficulty can be greatly reduced, and the process cost can be reduced.
In the present embodiment, the lower contact layer 205 is formed by n-type ion implantation and annealing, the implanted ions may be phosphorus ions, etc., and the lower contact layer 205 is of n-type conductivity.
The germanium-based absorption layer 206 may be epitaxially formed on the lower contact layer 205, and particularly within the germanium-based material selective epitaxial region 204. The germanium-based absorption layer 206 may be one of SiGe, Ge, GeSn, and GePb. The germanium-based absorber layer 206 is spaced from the mesa contact 210 on both sides to provide insulating isolation of the germanium-based absorber layer 206 from the mesa contact 210.
The upper contact layer 207, which may be formed on top of the germanium-based absorption layer 206 by ion implantation and annealing; in the present embodiment, the upper contact layer 207 is formed by p-type ion implantation and annealing, the implanted ions may be boron or the like, and the upper contact layer 207 is of p-type conductivity.
The lower electrode 208 and the upper electrode 209 are respectively located on the lower contact layer 205 and the upper contact layer 207, and in the present embodiment, the lower electrode 208 is formed on the bump contact portion 210. The upper electrode 209 and the upper contact layer 207 may be brought into ohmic contact by annealing or the like, and the lower electrode 208 and the lower contact layer 205 may be brought into ohmic contact at the same time, so as to further reduce the contact resistance.
The silicon waveguide structure 10 may be formed by etching the top silicon layer of the SOI substrate, and is connected to the first end of the germanium-based photodetector 20, and the incident light of the silicon waveguide structure 10 may enter the germanium-based photodetector 20 through direct coupling or evanescent coupling.
The silicon waveguide distributed bragg reflector 30 may be formed by etching top silicon of the SOI substrate, and is connected to the second end of the germanium-based photodetector 20, and reflected light of the silicon waveguide distributed bragg reflector 30 may enter the germanium-based photodetector 20 through direct coupling or evanescent coupling.
As shown in fig. 1, the silicon waveguide dbr 30 may be implemented by varying the width dimension or/and the height dimension of the silicon waveguide. In this embodiment, the silicon waveguide distributed bragg reflector 30 may be implemented by changing a width dimension of the silicon waveguide, specifically, the silicon waveguide distributed bragg reflector 30 includes a strip-shaped silicon waveguide 301 and a protrusion 302 protruding from the strip-shaped silicon waveguide 301 in a pulse transverse direction, and the strip-shaped silicon waveguide 301 and the protrusion 302 may be coated with a material such as silicon dioxide. The silicon waveguide distributed bragg reflector 30 has a high coupling efficiency with the germanium-based photodetector 20, so that a more efficient light absorption efficiency can be achieved.
According to the invention, the silicon waveguide Distributed Bragg Reflector (DBR) 30 structure is introduced into the rear end of the germanium photoelectric detector, so that light rays are reflected and enter the germanium photoelectric detector again, and the high-efficiency light absorption efficiency can be realized, thus the length of the detector can be effectively reduced, and the preparation of the photoelectric detector with low dark current, low capacitance and high responsivity can be realized.
As shown in fig. 1 to fig. 4, this embodiment further provides a method for manufacturing a waveguide-type ge-based photodetector 20 integrated with a silicon waveguide distributed bragg reflector 30, where the method includes:
as shown in fig. 1 and 4, step 1) S11 is performed to provide an SOI substrate, and the silicon waveguide structure 10 and the silicon waveguide distributed bragg reflector 30 are etched on the top silicon of the SOI substrate.
The SOI substrate specifically includes a bottom silicon layer 201, an insulating layer 202, and a top silicon layer 203. The silicon waveguide structure 10 and the silicon waveguide distributed bragg reflector 30 are formed in the top silicon layer 203 through photolithography and etching processes, and the silicon waveguide distributed bragg reflector 30 may be implemented by changing the width dimension or/and the height dimension of the silicon waveguide. In this embodiment, the silicon waveguide distributed bragg reflector 30 may be implemented by changing a width dimension of a silicon waveguide, specifically, the silicon waveguide distributed bragg reflector 30 includes a strip-shaped silicon waveguide 301 and a protrusion 302 protruding from the strip-shaped silicon waveguide 301 in a pulse transverse direction, and the strip-shaped silicon waveguide 301 and the protrusion 302 may be coated with a material such as silicon dioxide in a subsequent process.
As shown in fig. 4, step 2) S12 is then performed, a dielectric layer is deposited, a germanium-based material selective epitaxial region 204 is defined in the dielectric layer by using a photolithography and etching process, the top silicon of the SOI substrate is further etched to form the germanium-based material selective epitaxial region 204, a top silicon bottom layer with a partial thickness is reserved at the bottom of the germanium-based material selective epitaxial region 204, and a lower contact layer 205 is formed in the top silicon bottom layer and the top silicon bosses at two sides by using an ion implantation and annealing method. In the top silicon mesas on both sides of the top silicon bottom layer of this embodiment, the top silicon mesas and the top silicon bottom layer are also used as the lower contact layer 205 through ion implantation and annealing methods, that is, the lower contact layer 205 has mesa contact portions 210 located outside both sides of the germanium-based material selective epitaxial region 204, and the subsequent lower electrode 208 is formed on the mesa contact portions 210. Because the boss contact 210 is located on the top surface of the SOI substrate, compared with the fabrication of an electrode on the bottom silicon layer of the recessed top layer, the process difficulty can be greatly reduced, and the process cost can be reduced.
As shown in fig. 4, step 3) S13 is performed next, a germanium-based material layer is selectively epitaxially grown in the germanium-based material selective epitaxial region 204, two ends of the selectively epitaxially grown germanium-based material layer are directly contacted with the silicon waveguide structure 10 and the silicon waveguide distributed bragg reflector 30, an upper contact layer 207 is formed in the germanium-based material layer by using an ion implantation and annealing method, and a germanium-based absorption layer 206 is etched in the germanium-based material layer by using a photolithography and etching method, so that two sides of the germanium-based absorption layer 206 are spaced from the bump contact 210, thereby achieving the insulation and isolation between the germanium-based absorption layer 206 and the bump contact 210.
In this embodiment, the height of the germanium-based material layer is greater than the height of the germanium-based material selective epitaxial region 204 to ensure that the germanium-based absorption region has a sufficient thickness.
Step 4) S14, depositing a dielectric layer, defining an upper electrode 209 area and a lower electrode 208 area in the upper contact layer 207 and the lower contact layer 205 by photolithography and etching methods, and forming an upper electrode 209 and a lower electrode 208. Then, the upper electrode 209 and the upper contact layer 207 may be brought into ohmic contact by annealing or the like, and the lower electrode 208 and the lower contact layer 205 may be brought into ohmic contact at the same time, so as to further reduce the contact resistance.
Of course, the upper electrode 209 and the lower electrode 208 can also be prepared by a metal stripping process, and are not limited to the examples listed herein.
As described above, the waveguide type germanium-based photodetector 20 integrated with the silicon waveguide distributed bragg reflector 30 and the manufacturing method thereof according to the present invention have the following advantages:
compared with the traditional waveguide type detector, the invention introduces the silicon waveguide distributed Bragg reflector structure at the rear end of the germanium photoelectric detector, so that light rays are reflected to enter the germanium photoelectric detector again, and more efficient light absorption efficiency can be realized, thereby effectively reducing the length of the detector and realizing the preparation of the photoelectric detector with low dark current, low capacitance and high responsivity.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A silicon waveguide distributed bragg reflector integrated waveguide-based germanium-based photodetector, comprising:
a germanium-based photodetector;
a silicon waveguide structure connected to a first end of the germanium-based photodetector;
and the silicon waveguide distributed Bragg reflector is connected to the second end of the germanium-based photoelectric detector.
2. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 1, wherein: the silicon waveguide distributed Bragg reflector is realized by changing the width dimension or/and the height dimension of the silicon waveguide.
3. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 1, wherein: and the incident light of the silicon waveguide structure enters the germanium-based photoelectric detector in a direct coupling or evanescent wave coupling mode.
4. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 1, wherein: and the reflected light of the silicon waveguide distributed Bragg reflector enters the germanium-based photoelectric detector in a direct coupling or evanescent wave coupling mode.
5. The silicon waveguide distributed bragg mirror integrated waveguide-based germanium-based photodetector of claim 1, wherein the germanium-based photodetector comprises:
a lower contact layer;
a germanium-based absorption layer on the lower contact layer;
an upper contact layer on the germanium-based absorption layer;
and the lower electrode and the upper electrode are respectively positioned on the lower contact layer and the upper contact layer.
6. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 5, wherein: the lower contact layer is provided with boss contact parts positioned outside two sides of the germanium-based absorption layer, and the lower electrode is formed on the boss contact parts.
7. The silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector of claim 5, wherein: the germanium-based absorption layer is made of one of SiGe, Ge, GeSn and GePb.
8. A method for preparing a silicon waveguide distributed Bragg reflector integrated waveguide type germanium-based photoelectric detector as claimed in any one of claims 1 to 7, wherein the method for preparing the silicon waveguide distributed Bragg reflector integrated waveguide type germanium-based photoelectric detector comprises the following steps:
step 1), providing an SOI substrate, and etching a silicon waveguide structure and a silicon waveguide distributed Bragg reflector on top silicon of the SOI substrate;
step 2), depositing a dielectric layer, defining a germanium-based material selective epitaxial region in the dielectric layer by adopting a photoetching process, further etching the top silicon of the SOI substrate to form the germanium-based material selective epitaxial region, reserving a top silicon bottom layer with partial thickness at the bottom of the germanium-based material selective epitaxial region, and forming lower contact layers in the top silicon bottom layer and top silicon bosses on two sides by adopting an ion implantation and annealing method;
step 3), selectively epitaxially growing a germanium-based material layer in the germanium-based material selective epitaxial region, forming an upper contact layer in the germanium-based material layer by adopting an ion implantation and annealing method, and etching the germanium-based material layer by adopting a photoetching method to prepare a germanium-based absorption layer;
and 4), defining an upper electrode area and a lower electrode area in the upper contact layer and the lower contact layer by photoetching and etching methods, and forming an upper electrode and a lower electrode.
9. The method of claim 8, wherein the silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector comprises: the height of the germanium-based material layer is greater than the height of the germanium-based material selective epitaxial region.
10. The method of claim 8, wherein the silicon waveguide distributed bragg reflector integrated waveguide-type germanium-based photodetector comprises: and 3) two ends of the germanium-based material layer which is selectively epitaxially grown are respectively in direct contact with the silicon waveguide structure and the silicon waveguide distributed Bragg reflector.
CN201910677507.3A 2019-07-25 2019-07-25 Waveguide type germanium-based photoelectric detector and preparation method thereof Pending CN112366235A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113707732A (en) * 2021-08-05 2021-11-26 西安电子科技大学 Waveguide type Ge/Si avalanche photodiode based on Bragg reflector and preparation method thereof
CN113707733A (en) * 2021-08-05 2021-11-26 西安电子科技大学 Waveguide type Ge/Si avalanche photodiode and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113707732A (en) * 2021-08-05 2021-11-26 西安电子科技大学 Waveguide type Ge/Si avalanche photodiode based on Bragg reflector and preparation method thereof
CN113707733A (en) * 2021-08-05 2021-11-26 西安电子科技大学 Waveguide type Ge/Si avalanche photodiode and preparation method thereof

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