CN112285826A - Silicon-based multimode light receiving device and preparation method thereof - Google Patents
Silicon-based multimode light receiving device and preparation method thereof Download PDFInfo
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- CN112285826A CN112285826A CN202011249404.6A CN202011249404A CN112285826A CN 112285826 A CN112285826 A CN 112285826A CN 202011249404 A CN202011249404 A CN 202011249404A CN 112285826 A CN112285826 A CN 112285826A
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
The application discloses a silicon-based multimode light receiving device and a preparation method thereof, wherein the method comprises the following steps: obtaining an SOI wafer; preparing a probe, comprising: defining a detector region on the SOI wafer; forming a germanium material layer on the detector region; forming a germanium waveguide by photoetching and etching the germanium material layer, wherein the width of the germanium waveguide is 2.0-5.0 mu m; doping the detector region; forming a first electrode and a second electrode in the detector region; preparing a multimode silicon optical waveguide, wherein the width of the multimode silicon optical waveguide is 2.0-5.0 mu m; and forming a protective film on the surfaces of the detector and the multimode silicon optical waveguide. According to the silicon-based multimode optical receiving device and the preparation method thereof, the multimode silicon optical waveguide is coupled with the optical fiber, so that not only can the basic optical mode of the optical fiber be coupled to the multimode silicon optical waveguide, but also the high-order optical mode can be coupled to the multimode silicon optical waveguide.
Description
Technical Field
The invention relates to the field of semiconductors and photoelectric integration, in particular to a silicon-based multimode light receiving device and a preparation method thereof.
Background
With the increasing requirements of people on information transmission and processing speed and the coming of the multi-core computing era, electrical interconnection based on metal becomes a development bottleneck due to defects of overheating, delay, electronic interference and the like. And the problem can be effectively solved by adopting optical interconnection to replace electrical interconnection. Silicon-based optical interconnects are preferred for their incomparable cost and technical advantages in the implementation of optical interconnects. The silicon-based optical interconnection can not only play the advantages of high optical interconnection speed, large bandwidth, interference resistance, low power consumption and the like, but also fully utilize the advantages of mature microelectronic standard CMOS process, high-density integration, high yield, low cost and the like, and the development of the silicon-based optical interconnection can certainly promote the development of a new generation of high-performance computer and data communication system, and has wide market application prospect.
The core technology of silicon-based optical interconnection is a device which realizes various photoelectric functions on the basis of the process of a silicon-based soi (silicon on insulator) multimode silicon optical waveguide, such as an integrated light receiving device (receiver): the optical waveguide comprises components such as a multimode silicon optical Waveguide (WG) and a detector (PD). In the prior art of integrated receiver, light is coupled from an optical fiber to a single-mode (single mode) multimode silicon optical waveguide and is integrated with a photodetector, and an optical mode not coupled to the multimode silicon optical waveguide leaks out of the silicon waveguide along the waveguide, so that alignment tolerance of the optical fiber and the waveguide is small, especially for a small-sized waveguide with high integration, and alignment precision of the optical fiber coupling needs to reach submicron order, and therefore, alignment error of the optical fiber and the waveguide coupling causes performance degradation of the receiver and increases manufacturing cost of the optical fiber and the waveguide coupling.
Disclosure of Invention
The application aims to provide a silicon-based multimode optical receiving device and a preparation method thereof, and by coupling multimode silicon optical waveguides and optical fibers, not only can basic optical modes of the optical fibers be coupled to the multimode silicon optical waveguides, but also high-order optical modes can be coupled to the multimode silicon optical waveguides.
In order to achieve the above objects and other related objects, the present application provides a method for manufacturing a silicon-based multimode optical receiver device, comprising the steps of:
obtaining an SOI wafer;
preparing a probe, comprising: defining a detector region on the SOI wafer;
forming a germanium material layer on the detector region;
forming a germanium waveguide by photolithography and etching the germanium material layer;
doping the detector region;
forming a first electrode and a second electrode in the detector region;
preparing a multimode silicon optical waveguide, wherein the width of the multimode silicon optical waveguide is 2.0-5.0 mu m;
and forming a protective film on the surfaces of the detector and the multimode silicon optical waveguide.
Optionally, the forming a germanium material layer in the detector region includes:
and forming the germanium material layer on the detector region by adopting a chemical vapor deposition method.
Optionally, the forming a germanium material layer in the detector region further includes:
and adopting a planarization process to enable the upper surface of the germanium material layer and the upper surface of the top silicon layer of the SOI wafer to be on the same plane.
Optionally, the planarization process includes chemical etching and/or mechanical polishing.
Optionally, the preparing the multimode silicon optical waveguide comprises:
and forming the multimode silicon optical waveguide by photoetching and etching the top silicon layer of the SOI wafer.
Optionally, the protective film comprises a first dielectric sheath and a second dielectric sheath.
Optionally, the first dielectric cap layer employs silicon oxide.
Optionally, the second dielectric cap layer is silicon nitride.
The embodiment of the application also provides a silicon-based multimode optical receiving device, which comprises a detector and a multimode silicon optical waveguide;
the detector comprises a germanium waveguide, a first electrode and a second electrode formed on an SOI wafer;
the first electrode and the second electrode are respectively arranged on two sides of the germanium waveguide;
the germanium waveguide forms an interconnection with the multimode silicon optical waveguide;
the width of the multimode silicon optical waveguide is 2.0-5.0 mu m.
Optionally, the multimode silicon optical waveguide comprises a linear waveguide and/or a curved waveguide.
By adopting the technical scheme, the silicon-based multimode light receiving device and the preparation method thereof have the following beneficial effects:
according to the silicon-based multimode light receiving device and the preparation method thereof, the multimode silicon optical waveguide is coupled with the optical fiber, so that not only can the basic optical mode of the optical fiber be coupled to the multimode silicon optical waveguide, but also the high-order optical mode can be coupled to the multimode silicon optical waveguide, the high-order optical mode is transmitted along the waveguide and cannot be lost due to leakage, the high-order optical mode can be detected by the optical detector as the basic optical mode, and the manufacturing cost of coupling the optical fiber and the waveguide can be reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an alternative silicon-based multimode light-receiving device according to an embodiment of the present application;
fig. 2 is a flowchart of an alternative method for manufacturing a silicon-based multimode optical receiver device according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of an alternative SOI wafer according to an embodiment of the present application;
FIG. 4 is a cross-sectional view of devices after a germanium epitaxy process;
FIG. 5 is a cross-sectional view of the devices after fabrication of the waveguides;
FIG. 6 is a cross-sectional view of the devices after deposition of a second dielectric cap layer;
FIG. 7 is a graph comparing coupling loss for single mode and multi-mode waveguides with fiber alignment error;
FIG. 8 is a graph comparing coupling loss of a single mode waveguide and a multi-mode waveguide with angle deviation of a coupling end face of a multi-mode silicon optical waveguide.
The following is a supplementary description of the drawings:
1-a top silicon layer; 12-buried oxide layer; 13-a bottom silicon layer; 1-a detector; 101-a layer of germanium material; 102-a germanium waveguide; 103-a first electrode; 104-a second electrode; 2-multimode silicon optical waveguide; 3-a first dielectric cap layer; 4-a second dielectric cap layer.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention. In the description of the present invention, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein.
It should be noted that the drawings provided in the embodiments of the present application are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an alternative silicon-based multimode optical receiver device according to an embodiment of the present application, where the silicon-based multimode optical receiver device includes a probe 1 and a multimode silicon optical waveguide 2 integrated on an SOI wafer, and the probe 1 and the multimode silicon optical waveguide 2 are interconnected.
Fig. 2 is a flowchart of an alternative method for manufacturing a silicon-based multimode optical receiver device according to an embodiment of the present application, where in fig. 2, the method for manufacturing a silicon-based multimode optical receiver device according to an embodiment of the present application includes the following steps:
s1, obtaining an SOI wafer;
referring to fig. 3, an optional silicon-based multimode optical receiver device according to the embodiment of the present application is based on a 3 micron optoelectronic technology system, and an SOI wafer is adopted, wherein the top silicon layer 11 has a thickness of 3 microns, the buried oxide layer 12, and the bottom silicon layer 13, and the silicon-based multimode optical receiver device is integrated on one SOI wafer.
S2, preparing a detector 1, including:
s201, defining a detector area on an SOI wafer;
in one implementation, a trench (unexposed buried oxide layer 12) of a predetermined size may be formed by photolithography and etching the top silicon layer 11 of the SOI wafer to define the detector region.
S202, forming a germanium material layer 101 in a detector region;
referring to fig. 4, fig. 4 is a cross-sectional view of each device after a germanium epitaxial process, wherein fig. 4(a) is a cross-sectional view of a multimode silicon optical waveguide region after the germanium epitaxial process, and fig. 4(b) is a cross-sectional view of a detector region after the germanium epitaxial process.
S203, forming a germanium waveguide 102 by photoetching and etching the germanium material layer 101, wherein the width of the germanium waveguide 102 is 0.2-1.5 mu m, and the height of the germanium waveguide is 2.0-3.0 mu m;
referring to fig. 5, fig. 5 is a cross-sectional view of each device after waveguide fabrication, where fig. 5(a) is a cross-sectional view of a multimode silicon optical waveguide region after germanium waveguide fabrication, and fig. 5(b) is a cross-sectional view of a detector region after germanium waveguide fabrication, based on the 3-micron optoelectronic technology described in the embodiments of the present application, the height of the germanium waveguide 102 in the embodiments of the present application is not greater than 3 microns, in a specific implementation, the size of the germanium waveguide 102 may not be limited to the above size, and may be designed according to specific needs, for example, when an ultra-thin SOI wafer is used, because the thickness is limited, the thickness of the germanium waveguide may be less than 1 micron, and the width of the germanium waveguide may be designed to be widened according to needs.
S204, doping the detector region;
in one embodiment, an ion implantation process may be used to form a P + doped region and an N + doped region in the detector region, which are separated by the germanium waveguide 102.
S205, forming a first electrode 103 and a second electrode 104 in a detector area;
referring to fig. 6, fig. 6 is a cross-sectional view of each device after depositing a second dielectric passivation layer, where fig. 6(a) is a cross-sectional view of the multimode silicon optical waveguide region after depositing the second dielectric passivation layer, which is also a cross-sectional view taken along a-a direction shown in fig. 1, and fig. 6(B) is a cross-sectional view taken along B-B direction shown in fig. 1, in a specific implementation, a metal may be deposited or electroplated on the P + -type doped region and the N + -type doped region to form a first electrode 103 and a second electrode 104, and the material of the first electrode 103 and the second electrode 104 may be a metal material with good conductivity such as Cu, Au, W, Pt, etc. and capable of forming ohmic contact with Ge.
S3, preparing a multimode silicon optical waveguide 2, wherein the multimode silicon optical waveguide 2 has a width of 2.0-5.0 μm and a height of 2.0-3.0 μm;
as an alternative embodiment, the preparation of the multimode silicon optical waveguide 2 comprises:
the multimode silicon optical waveguide 2 is formed by photolithography and etching of the top silicon layer 11 of the SOI wafer.
Referring to fig. 6, based on the 3 μm optoelectronic technology described in the embodiment of the present application, the height of the multimode silicon optical waveguide 2 in the embodiment of the present application is not greater than 3 μm, in a specific implementation, the size of the multimode silicon optical waveguide 2 may not be limited to the above size, and the multimode silicon optical waveguide 2 may be designed according to specific needs, for example, when an ultra-thin SOI wafer is used, the thickness of the multimode silicon optical waveguide 2 may be smaller than 1 μm due to the limited thickness, and in order to implement the multimode silicon optical waveguide, the width of the silicon optical waveguide may be appropriately widened at this time, so as to form the multimode silicon optical waveguide.
It should be noted that, in practical applications, the widths of the germanium waveguide and the multimode silicon optical waveguide may not be fixed values, and the germanium waveguide and the multimode silicon optical waveguide with corresponding sizes may be designed at special positions according to the requirements of the device, and the corresponding sizes are adopted at the connection position of the germanium waveguide and the multimode silicon optical waveguide.
It should be noted that, the dimensions of the germanium waveguide and the multimode silicon optical waveguide in the embodiment of the present application are defined based on the above-mentioned 3 micron optoelectronic technology, in a specific implementation, the specific dimensions of the germanium waveguide and the multimode silicon optical waveguide should not be limited to the above-mentioned dimensions, and may be specifically designed according to actual needs, for example, when an ultra-thin silicon-based material (about 0.22 micron) is used, the heights of the germanium waveguide and the multimode silicon optical waveguide are limited, so that the widths of the germanium waveguide and the multimode silicon optical waveguide may be appropriately widened according to needs.
And S4, forming a protective film on the surfaces of the detector 1 and the multimode silicon optical waveguide 2.
As shown in fig. 6, a first dielectric passivation layer 3 and a second dielectric passivation layer 4 may be deposited on the surface of each prepared device to form a protective film for encapsulation, where the first dielectric passivation layer 3 may be made of a silicon oxide material with a thickness of about 0.1-5 μm, and the second dielectric passivation layer 4 may be made of a silicon nitride material with a thickness of less than 1 μm.
The thicknesses of the first dielectric protective layer 3 and the second dielectric protective layer 4 are not particularly limited, and may be specifically designed according to actual needs.
As an optional implementation manner, step S202 further includes:
the upper surface of the germanium material layer 101 and the upper surface of the top silicon layer 11 of the SOI wafer are on the same plane by using a planarization process.
In a specific implementation, the planarization process includes chemical etching and/or mechanical polishing.
It should be noted that the order of the fabrication process of the silicon-based optical transceiver in the embodiment of the present application is not limited to the above steps, and in the specific implementation, the fabrication of the germanium waveguide and the multimode silicon optical waveguide may be performed simultaneously, or the encapsulation of each device may be performed simultaneously, so as to simplify the fabrication process.
The embodiment of the application also provides a silicon-based multimode optical receiving device (shown in combination with fig. 1), which comprises a detector 1 and a multimode silicon optical waveguide 2;
the first electrode 103 and the second electrode 104 are respectively arranged on two sides of the germanium waveguide 102;
the germanium waveguide 102 forms an interconnection with the multimode silicon optical waveguide 2;
the width of the multimode silicon optical waveguide 2 is 2.0-5.0 μm.
As an alternative embodiment, the multimode silicon optical waveguide 2 shown in FIG. 1 comprises a straight waveguide and/or a curved waveguide.
In specific implementation, the multimode silicon optical waveguide 2 of the embodiment of the present application may be designed as a linear waveguide and/or a curved waveguide according to the device structure requirement, and the multimode silicon optical waveguide 2 shown in fig. 1 includes a linear waveguide.
It should be noted that the germanium waveguide and the multimode silicon optical waveguide described in the embodiments of the present application are ridge waveguides, the height of the germanium waveguide described in the above embodiments is the sum of the height of the ridge germanium waveguide and the height of the germanium material layer that is not completely etched below the ridge germanium waveguide, and the height of the multimode silicon optical waveguide is the sum of the height of the ridge multimode silicon optical waveguide and the height of the top silicon layer that is not completely etched below the multimode silicon optical waveguide.
FIG. 7 is a graph comparing coupling loss versus fiber alignment error for a single mode waveguide and a multimode waveguide according to embodiments of the present application, and it can be seen from FIG. 7 that increasing the multimode waveguide width can significantly relax the alignment accuracy requirement for coupling the waveguide and the fiber; fig. 8 is a comparison graph of coupling loss of the single-mode waveguide and the multimode waveguide according to the embodiment of the present application against angle deviation of a coupling end face of the multimode silicon optical waveguide, and it can be known from fig. 8 that the sensitivity of the responsivity of the silicon-based multimode optical receiving device according to the embodiment of the present application to the angle deviation of the coupling end face is reduced, which also relaxes the process requirement of the waveguide coupling end face on the angle of the silicon dry etching end face.
As described above, the silicon-based multimode optical receiver and the method for manufacturing the same of the present invention have the following advantages:
according to the silicon-based multimode light receiving device and the preparation method thereof, the multimode silicon optical waveguide is coupled with the optical fiber, so that not only can the basic optical mode of the optical fiber be coupled to the multimode silicon optical waveguide, but also the high-order optical mode can be coupled to the multimode silicon optical waveguide, the high-order optical mode is transmitted along the waveguide and cannot be lost due to leakage, the high-order optical mode can be detected by the optical detector as the basic optical mode, and the manufacturing cost of coupling the optical fiber and the waveguide can be reduced.
The method and the structure of the invention are simple, and the invention has wide application prospect in the semiconductor field and the photoelectric integration field. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A preparation method of a silicon-based multimode light receiving device is characterized by comprising the following steps:
obtaining an SOI wafer;
preparing a probe, comprising: defining a detector region on the SOI wafer;
forming a germanium material layer on the detector region;
forming a germanium waveguide by photolithography and etching the germanium material layer;
doping the detector region;
forming a first electrode and a second electrode in the detector region;
preparing a multimode silicon optical waveguide, wherein the width of the multimode silicon optical waveguide is 2.0-5.0 mu m;
and forming a protective film on the surfaces of the detector and the multimode silicon optical waveguide.
2. The method for preparing a silicon-based multimode light-receiving device according to claim 1, wherein the step of forming a germanium material layer on the detector region comprises the following steps:
and forming the germanium material layer on the detector region by adopting a chemical vapor deposition method.
3. The method for preparing a silicon-based multimode optical receiver device according to claim 2, wherein the forming a germanium material layer in the detector region further comprises:
and adopting a planarization process to enable the upper surface of the germanium material layer and the upper surface of the top silicon layer of the SOI wafer to be on the same plane.
4. The method of claim 3, wherein the planarization process comprises chemical etching and/or mechanical polishing.
5. The method for preparing a silicon-based multimode optical receiver device according to claim 1, wherein the preparing a multimode silicon optical waveguide comprises:
and forming the multimode silicon optical waveguide by photoetching and etching the top silicon layer of the SOI wafer.
6. The method of claim 1, wherein the protective film comprises a first dielectric cap layer and a second dielectric cap layer.
7. The method for preparing a silicon-based multimode light-receiving device according to claim 6, wherein the first dielectric protective layer is silicon oxide.
8. The method for preparing a silicon-based multimode light-receiving device according to claim 6, wherein the second dielectric protective layer is made of silicon nitride.
9. A silicon-based multimode optical receiving device is characterized by comprising a detector and a multimode silicon optical waveguide;
the detector comprises a germanium waveguide, a first electrode and a second electrode formed on an SOI wafer;
the first electrode and the second electrode are respectively arranged on two sides of the germanium waveguide;
the germanium waveguide forms an interconnection with the multimode silicon optical waveguide;
the width of the multimode silicon optical waveguide is 2.0-5.0 mu m.
10. The silicon-based multimode light-receiving device according to claim 8, wherein the multimode silicon optical waveguide comprises a linear waveguide and/or a curved waveguide.
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