CN104505420A - Photoelectric detector and preparation method of photoelectric detector - Google Patents
Photoelectric detector and preparation method of photoelectric detector Download PDFInfo
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- CN104505420A CN104505420A CN201410817737.2A CN201410817737A CN104505420A CN 104505420 A CN104505420 A CN 104505420A CN 201410817737 A CN201410817737 A CN 201410817737A CN 104505420 A CN104505420 A CN 104505420A
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- 238000002360 preparation method Methods 0.000 title claims description 17
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 47
- 238000002161 passivation Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000011248 coating agent Substances 0.000 claims description 32
- 238000000576 coating method Methods 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 230000004044 response Effects 0.000 abstract description 9
- 230000003071 parasitic effect Effects 0.000 abstract description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 5
- 239000003990 capacitor Substances 0.000 abstract 3
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
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- 239000013307 optical fiber Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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Abstract
The invention provides a photoelectric detector, which comprises a semi-insulating InP substrate, an InP buffer layer, an InGaAs photosensitive layer, an InP cap layer and a passivation layer in laminated arrangement, wherein a through hole exposing the partial region of the InP cap layer part is formed in the passivation layer, an annular second electrode is formed along the inner side wall of the through hole, and the partial region of the second electrode extends to the upper part of the passivation layer for forming a lap joint region; the upper part of the lap joint region is directly provided with an electrode lead wire; a channel penetrating through the InP buffer layer, the InGaAs photosensitive layer and the InP cap layer is formed in the direction along any one tangent line of one side, near the contact region, of the through hole, and divides the InP buffer layer, the InGaAs photosensitive layer and the InP cap layer into two parts in a direction along the parallel surface of the InP substrate. Therefore the electrode lead wire cannot form a capacitor structure with each semiconductor layer, arranged vertically under the electrode lead wire, of the electrode lead wire, or even if the capacitor structure is formed, the capacitor structure cannot be connected into a photoelectric detector circuit, the parasitic capacitance formed by the electrode lead wire is effectively reduced, and the response speed of the photoelectric detector is accelerated.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of in-Ga-As photoelectric detector and preparation method thereof.
Background technology
Photodetector is semiconductor device light signal being converted to the signal of telecommunication, in the system for optical-fibre communications, computer network, cable TV network and various photo-electric control, photodetection.Wherein, PIN photoelectric detector adapts under low pressure work, and responsiveness is high, signal to noise ratio good, easy to use, is photodetector the most frequently used in domestic and international optical communication.
Usually, PIN type photodetector adopts indium gallium arsenic material usually, and in prior art, the mechanism of PIN type in-Ga-As photoelectric detector as shown in Figure 1, comprises semi-insulating InP substrate 1, in InP resilient coating 2, InGaAs photosensitive layer 3, the InP cap layers 4 of the storied length in InP substrate 1 upper strata, form n-i-p structure; And the first electrode 5 be formed directly on InP resilient coating 2, be formed directly into annular second electrode 6 of InP cap layers 4, and be overlapped on the contact conductor 7 on the second electrode 6; The annular region that described second electrode 6 is formed is photosensitive area.During described photodetector work, produce charge carrier in InP resilient coating 2 and InP cap layers 4, the junction capacitance of formation has a strong impact on the response speed of described photodetector.For this reason, prior art first directly forms the passivation layer 8 covering InP cap layers 4 usually in InP cap layers 4, in passivation layer 8, offer the second electrode 6 that through duct forms ring-type again, to reduce photosensitive area area, thus reduce junction capacitance to the impact of described photoelectric device.
As shown in Figure 1, in order to ensure the reliability that the second electrode 6 is connected with contact conductor 7, usually the subregion of the second electrode 6 can be extended to the top of passivation layer 8, to increase the contact area of the second electrode 6 and contact conductor 7.But, due in vertical direction, the contact conductor 7 of overlap is larger with each layer semi-conducting material overlapping region, and passivation layer 8 is also folded with between contact conductor 7 and each layer semi-conducting material, form capacitance structure, produce the parasitic capacitance that magnitude is higher, seriously constrain the response speed of described photodetector.
Summary of the invention
For this reason, to be solved by this invention is that existing PIN type in-Ga-As photoelectric detector parasitic capacitance is comparatively large, affects the problem of described photodetector response speed, thus high speed in-Ga-As photoelectric detector providing a kind of parasitic capacitance little and preparation method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of photodetector of the present invention, comprise semi-insulating InP substrate and the InP resilient coating of stacked setting, described InP resilient coating is directly formed with disjunct first electrode and InGaAs photosensitive layer, stackedly on described InGaAs photosensitive layer be provided with InP cap layers and passivation layer, described InP cap layers area is less than or equal to the area of described InGaAs photosensitive layer; Offer the through hole exposing described InP cap layers subregion in described passivation layer, form annular second electrode along described through hole madial wall, the subregion of described second electrode extends to the top of described passivation layer, forms overlap; Described overlap top is directly provided with contact conductor;
Along the arbitrary tangential direction of described through hole near the side of described contact zone, be formed with the raceway groove of through described InP resilient coating, described InGaAs photosensitive layer and described InP cap layers, along the parallel surface direction of described InP substrate, the described InP resilient coating of stacked setting, described InGaAs photosensitive layer and described InP cap layers are divided into two parts by described raceway groove.
Preferably, passivating material is filled with in described raceway groove.
Preferably, described second electrode is euphotic electrode.
Described passivation layer covers the sidewall of described InGaAs photosensitive layer and described InP cap layers.
Described InP cap layers is also directly provided with the anti-reflection layer at least covering described second electrode middle section, for reducing the reflection ray of described InP cap layers.
The preparation method of photodetector of the present invention, comprises the steps:
S1, in semi-insulating InP substrate epitaxial growth InP resilient coating, InGaAs photosensitive layer and InP cap layers successively;
S2, to InGaAs photosensitive layer and InP cap layers patterning, formed and expose the table top in InP buffer layer part region, then directly form the passivation layer of covering InP cap layers in InP cap layers;
S3, over the passivation layer formation expose the through hole of InP cap layers subregion, form the second electrode of ring-type at the madial wall of through hole, and the subregion extension of the second electrode is covered to passivation layer top, forms contact zone; Table top is directly formed the first electrode away from InGaAs photosensitive layer and InP cap layers;
S4, along the arbitrary tangential direction of through hole near the side of contact zone, form the raceway groove of through InP resilient coating, InGaAs photosensitive layer and InP cap layers, along the parallel surface direction of InP substrate, the InP resilient coating of stacked setting, InGaAs photosensitive layer and InP cap layers are divided into two parts by raceway groove;
S5, on contact zone, directly form contact conductor.
Preferably, in step S4, be also included in the step of filling passivating material in described raceway groove.
Preferably, in step S3, described second electrode is euphotic electrode.
In step S2, described passivation layer also covers the sidewall of described InGaAs photosensitive layer and described InP cap layers.
The step directly forming the anti-reflection layer at least covering described second electrode middle section in described InP cap layers is also comprised after step S5.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of photodetector of the present invention, comprises the semi-insulating InP substrate of stacked setting, InP resilient coating, InGaAs photosensitive layer, InP cap layers and passivation layer; Offer the through hole exposing described InP cap layers subregion in described passivation layer, form annular second electrode along described through hole madial wall, the subregion of described second electrode extends to the top of described passivation layer, forms overlap; Described overlap top is directly provided with contact conductor; Along the arbitrary tangential direction of described through hole near the side of described contact zone, be formed with the raceway groove of through described InP resilient coating, described InGaAs photosensitive layer and described InP cap layers, and along the parallel surface direction of described InP substrate, three be divided into two parts; This just makes described contact conductor each semiconductor layer of perpendicular below cannot form capacitance structure, even if or the capacitance structure formed can not be connected in described photo-detector circuit, effectively reduce the parasitic capacitance that described contact conductor is formed, improve the response speed of described photodetector.
2, the preparation method of a kind of photodetector of the present invention, technique is simple, and preparation cost is low, easily realizes large-scale industrial production.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is PIN type in-Ga-As photoelectric detector structural representation in prior art;
Fig. 2 a ~ 2e is the structural representation of photodetector of the present invention in preparation process;
In figure, Reference numeral is expressed as: 1-InP substrate, 2-InP resilient coating, 3-InGaAs photosensitive layer, 4-InP cap layers, 5-first electrode, 6-second electrode, 7-contact conductor, 8-passivation layer.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
Embodiment
The present embodiment provides a kind of photodetector, as shown in Figure 2 e, comprise on the semi-insulating InP substrate 1 of stacked setting and InP resilient coating 2, described InP resilient coating 2 and be directly formed with disjunct first electrode 5 and InGaAs photosensitive layer 3, stackedly on described InGaAs photosensitive layer 3 be provided with InP cap layers 4, described InP cap layers 4 area is less than or equal to the area of described InGaAs photosensitive layer 3.Described InP cap layers 4 is also directly formed with away from the side of described InP substrate 1 passivation layer 8 covering described InP cap layers 4; described passivation layer 8 also extends the sidewall being covered to described InP cap layers 4 and described InGaAs photosensitive layer 3, to protect described InP cap layers 4 and described InGaAs photosensitive layer 3.
In the present embodiment, described InP substrate 1 is preferably semi-insulating InP substrate, and thickness is 350 μm.
Described InP resilient coating 2 is n type semiconductor layer, and the present embodiment is preferably the InP layer doped with element sulphur, and doping content is 2 × 10
18/ cm
-3, thickness is 1 μm.
Described InGaAs photosensitive layer 3 is intrinsic semiconductor layer, and the present embodiment is preferably In
0.53ga
0.47as, thickness is 1.5 μm.
Described InP cap layers 4 is p type semiconductor layer, and the present embodiment is preferably the InP layer doped with Zn-ef ficiency, and doping content is 5 × 10
18/ cm
-3, thickness is 1 μm.
Described passivation layer 8 is selected from but is not limited to one or more layers inorganic layer of passivation material and/or organic passivation materials layer, and passivation layer 8 described in the present embodiment is preferably polyimide layer, and thickness is 1 μm.
Offer the through hole exposing described InP cap layers 4 subregion in described passivation layer 8, form annular second electrode 6 along described through hole madial wall, the subregion of described second electrode 6 extends to the top of described passivation layer 8, forms overlap; Described overlap top is directly provided with contact conductor 7.
Described second electrode 6 is selected from but is not limited to the silver electrode of printing opacity, Graphene electrodes, ITO (tin indium oxide) electrode, ZnO (zinc oxide) electrode etc.; Along the normal direction of described through hole madial wall, the thickness of described second electrode 6 is 1nm ~ 200nm; In the present embodiment, described second electrode 6 is preferably argent electrode, and the thickness along described through hole madial wall normal direction is 10nm.
In the present embodiment, described second electrode 6 is preferably euphotic electrode, thus make the region by described second electrode 6 covers also can become photosensitive area, when described photodetector design, the area of photosensitive area more easily calculates, preparation technology's precision of device is higher, and then improves the performance of described photodetector.
Along the arbitrary tangential direction of described through hole near the side of described contact zone, be formed with the raceway groove of through described InP resilient coating 2, described InGaAs photosensitive layer 3 and described InP cap layers 4, along the parallel surface direction of described InP substrate 1, the described InP resilient coating 2 of stacked setting, described InGaAs photosensitive layer 3 and described InP cap layers 4 are divided into two parts by described raceway groove.In the present embodiment, the orthographic projection of described raceway groove in described InP substrate 1 is rectangle, and width is 20 μm.As convertible embodiment of the present invention, the orthographic projection of described communication in described InP substrate 1 can be any bar shaped, all can realize object of the present invention, belong to protection scope of the present invention.
Described raceway groove be arranged so that described contact conductor 7 each semiconductor layer of perpendicular below cannot form capacitance structure, or in the present embodiment, even if formation capacitance structure, because each semiconductor layer (described InP resilient coating 2, described InGaAs photosensitive layer 3 and described InP cap layers 4) is formed open circuit by described raceway groove segmentation, this electric capacity can not be connected in described photo-detector circuit, effectively reduce the parasitic capacitance that described contact conductor 7 is formed, improve the response speed of described photodetector.
As convertible embodiment of the present invention, described InP cap layers 4 is also directly provided with the anti-reflection layer at least covering described second electrode 6 middle section, for reducing the reflection ray of described InP cap layers 4, improving light amount, thus improve the response speed of described photodetector.
The preparation method of described photodetector, comprises the steps:
S1, as shown in Figure 2 a, by growth technology InP resilient coating 2, described InGaAs photosensitive layer 3 and described InP cap layers 4 described in epitaxial growth successively in described semi-insulating InP substrate 1.
S2, as shown in Figure 2 b, by etching technics, patterning is carried out to described InGaAs photosensitive layer 3 and described InP cap layers 4, form the table top exposing described InP resilient coating 2 subregion; In described InP cap layers 4, the passivation layer 8 covering described InP cap layers 4 surface and sidewall and described InGaAs photosensitive layer 3 sidewall is directly formed again by spin coating process.
S3, as shown in Figure 2 c, by wet-etching technology, described passivation layer 8 forms the through hole exposing described InP cap layers 4 subregion; Formed described second electrode 6 of ring-type at the madial wall of through hole by evaporation process, the subregion extension of described second electrode 6 is covered to described passivation layer 8 top, forms contact zone; While preparing described second electrode 6, utilize same evaporation process direct described first electrode 5 formed away from described InGaAs photosensitive layer 3 and described InP cap layers 4 on table top.
S4, as shown in Figure 2 d, pass through wet-etching technology, along the arbitrary tangential direction of through hole near the side of contact zone, form the raceway groove of through described InP resilient coating 2, described InGaAs photosensitive layer 3 and described InP cap layers 4, along the parallel surface direction of described InP substrate 1, the described InP resilient coating 2 of stacked setting, described InGaAs photosensitive layer 3 and described InP cap layers 4 are divided into two parts by described raceway groove; In the present embodiment, be also included in the step of filling passivating material in described raceway groove, to strengthen the intensity of described contact conductor 7 in contact zone.Described passivating material can be preferably identical with described passivation layer 8 material, to reduce cost of material.
S5, as shown in Figure 2 e, directly forms contact conductor 7 by magnetron sputtering technique on contact zone.
As convertible embodiment of the present invention, also comprise the step directly forming the anti-reflection layer at least covering described second electrode 6 middle section in described InP cap layers 4 after step S5, all can realize object of the present invention, belong to protection scope of the present invention.
As convertible embodiment of the present invention; the preparation technology of each element in photodetector described in above-mentioned steps is not limited thereto; other treatment process that can reach same effect of the prior art; and select corresponding treatment process all can reach object of the present invention according to different materials, belong to protection scope of the present invention.
Comparative example
This comparative example provides a kind of photodetector, its structure and the same embodiment of preparation method, unlike: the through communication forming open circuit is not set in each semiconductor layer (described InP resilient coating 2, described InGaAs photosensitive layer 3 and described InP cap layers 4).In specific implementation method, omit step S4, after step S3, directly carry out step S5.
Test case
By Agilent 4284A, the capacitance of photodetector described in embodiment and comparative example is tested; By Agilent 8703B, the frequency response of photoelectric detector chip described in embodiment and comparative example is tested; Test data is as shown in the table:
| Electric capacity (pF) | Three dB bandwidth (GHz) | |
| Embodiment | 0.2 | 15.7 |
| Comparative example | 0.38 | 8 |
As can be seen from upper table data, the photodetector described in the embodiment of the present invention, compared with comparative example, significantly reduces device capacitance value, effectively improves response device speed.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (10)
1. a photodetector, comprise semi-insulating InP substrate (1) and the InP resilient coating (2) of stacked setting, described InP resilient coating (2) is directly formed with disjunct first electrode (5) and InGaAs photosensitive layer (3), described InGaAs photosensitive layer (3) is above stacked is provided with InP cap layers (4) and passivation layer (8), and described InP cap layers (4) area is less than or equal to the area of described InGaAs photosensitive layer (3); The through hole exposing described InP cap layers (4) subregion is offered in described passivation layer (8), annular second electrode (6) is formed along described through hole madial wall, the subregion of described second electrode (6) extends to the top of described passivation layer (8), forms overlap; Described overlap top is directly provided with contact conductor (7);
It is characterized in that,
Along the arbitrary tangential direction of described through hole near the side of described contact zone, be formed with the raceway groove of through described InP resilient coating (2), described InGaAs photosensitive layer (3) and described InP cap layers (4), along the parallel surface direction of described InP substrate (1), the described InP resilient coating (2) of stacked setting, described InGaAs photosensitive layer (3) and described InP cap layers (4) are divided into two parts by described raceway groove.
2. photodetector according to claim 1, is characterized in that, is filled with passivating material in described raceway groove.
3. photodetector according to claim 1, is characterized in that, described second electrode (6) is euphotic electrode.
4. photodetector according to claim 1, is characterized in that, described passivation layer (8) covers the sidewall of described InGaAs photosensitive layer (3) and described InP cap layers (4).
5. photodetector according to claim 1, it is characterized in that, described InP cap layers (4) is also directly provided with the anti-reflection layer at least covering described second electrode (6) middle section, for reducing the reflection ray of described InP cap layers (4).
6. a preparation method for the photodetector described in any one of claim 1-5, is characterized in that, comprises the steps:
S1, in semi-insulating InP substrate (1) epitaxial growth InP resilient coating (2), InGaAs photosensitive layer (3) and InP cap layers (4) successively;
S2, to InGaAs photosensitive layer (3) and InP cap layers (4) patterning, form the table top exposing InP resilient coating (2) subregion, then at the upper passivation layer (8) directly forming covering InP cap layers (4) of InP cap layers (4);
S3, form the through hole exposing InP cap layers (4) subregion passivation layer (8) is upper, second electrode (6) of ring-type is formed at the madial wall of through hole, the subregion extension of the second electrode (6) is covered to passivation layer (8) top, forms contact zone; Table top is directly formed the first electrode (5) away from InGaAs photosensitive layer (3) and InP cap layers (4);
S4, along the arbitrary tangential direction of through hole near the side of contact zone, form the raceway groove of through InP resilient coating (2), InGaAs photosensitive layer (3) and InP cap layers (4), along the parallel surface direction of InP substrate (1), the InP resilient coating (2) of stacked setting, InGaAs photosensitive layer (3) and InP cap layers (4) are divided into two parts by raceway groove;
S5, on contact zone, directly form contact conductor (7).
7. the preparation method of photodetector according to claim 6, is characterized in that, in step S4, is also included in the step of filling passivating material in described raceway groove.
8. the preparation method of photodetector according to claim 6, is characterized in that, in step S3, described second electrode (6) is euphotic electrode.
9. the preparation method of photodetector according to claim 6, is characterized in that, in step S2, described passivation layer (8) also covers the sidewall of described InGaAs photosensitive layer (3) and described InP cap layers (4).
10. the preparation method of photodetector according to claim 6, it is characterized in that, after step S5, also comprise the step directly at least covering the anti-reflection layer of described second electrode (6) middle section in the upper formation of described InP cap layers (4).
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| CN104505420B (en) | 2016-08-31 |
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