CN106784132A - Single file carrier photo-detector structure and preparation method thereof - Google Patents
Single file carrier photo-detector structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000005260 corrosion Methods 0.000 claims abstract description 62
- 230000007797 corrosion Effects 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 41
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 238000001259 photo etching Methods 0.000 claims description 18
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 239000011259 mixed solution Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 238000003776 cleavage reaction Methods 0.000 claims description 4
- 230000007017 scission Effects 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000002745 absorbent Effects 0.000 abstract description 6
- 239000002250 absorbent Substances 0.000 abstract description 6
- 238000004891 communication Methods 0.000 abstract description 3
- 230000004043 responsiveness Effects 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The present invention provides a kind of single file carrier photo-detector structure and preparation method thereof, using the method for substep corrosion, produce the collecting layer area photo-detector structure smaller than absorbed layer area, so that device capacitor is greatly reduced, under the conditions of same absorbent thickness degree, the RC responsive bandwidths of device are improve, and then improves the total bandwidth of device；Under conditions of identical collecting layer area and same absorbent thickness degree (RC bandwidth, get over bandwidth identical), device has bigger absorbed layer area, thus there is bigger responsiveness, can be worked under incident optical power higher, performance boost becomes apparent in high-speed high-power application, it is adaptable to the field such as light-receiving in terahertz signal generation, high speed optical communication.
Description
Technical field
The invention belongs to semiconductor photoelectric device technical field, more particularly to a kind of single file carrier photo-detector structure
And preparation method thereof.
Background technology
Terahertz (hereinafter referred to as THz, 1THz=1012Hz) wave band refer in electromagnetic spectrum frequency from 100GHz to
The electromagnetic spectrum region of 10THz, corresponding wavelength from 3 millimeters to 30 microns, between millimeter wave and infrared light, communication,
The aspects such as safety check imaging have broad prospect of application, wherein, THz radio communications meet following wireless broadband data transmission to bandwidth
Demand.Produce the mode of THz radiation to inherit the advantage of Photonics Technology using photomixing, with continuous output, wideband adjustable,
The features such as output power, normal temperature work, associated component cost performance is high, thus practicality is very strong, and photo-detector is mixed as light
Frequency device is the important devices in photoproduction THz technologies.
Photo-detector is a kind of semiconductor devices that can convert light into electric signal, when the photon energy of incident optical signal
When absorbing the band gap of layer material more than photo-detector, photo-generated carrier will be produced in photo-detector, traditional PI N structure lights are visited
Survey in device, electronics and hole produce in undoped absorbed layer, under DC Electric Field, accelerate to float to both sides electrode direction
Move, form photoelectric current.In PIN structural photo-detector, because hole drift velocity is significantly less than electron drift velocity, when high-power
When light is incident, a large amount of holes remained in depletion layer generate space charge effect, limit the power output of device, thus
It is highly difficult to keep high current density and high-speed response.
And single file carrier photo-detector (UTC-PD) for occurring in recent years, as shown in figure 1, absorbed layer is done using p-type material,
N-shaped broad-band gap layer of InP will be absorbed and be collected and separate as collecting layer, only electronics as active carrier, with traditional PIN junction
Structure photo-detector is compared, and high speed performance is greatly promoted, while electron accumulation is few, device can work under more high current density,
It is the ideal component of optical mixer unit in photoproduction Terahertz Technology with high current density high bandwidth characteristic.
But existing UTC-PD is high due to working frequency, it is especially applicable to when hundreds of GHz signals are produced, it is necessary to absorbed layer
It is very thin to improve carrier transit time, while increase device area being rung with improving device incident optical power ability to work high and light
Response, but area increase can cause device junction capacity to increase so that and device R C responsive bandwidths are substantially reduced, and are unfavorable for device at a high speed
Work.
In consideration of it, being necessary that a kind of new single file carrier photo-detector structure of design and preparation method thereof is used to solve
State technical problem.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of single file carrier photo-detector
Structure and preparation method thereof, the incident optical power high and optical responsivity of device cannot be being improved for solving existing UTC-PD
Increase the problem of the RC responsive bandwidths of device simultaneously.
In order to achieve the above objects and other related objects, the present invention provides a kind of making side of single file carrier photo-detector
Method, the preparation method includes：
S1：Contact layer, collecting layer, absorbed layer and P under growing N-type heavy doping successively from top to bottom on SI-substrate
Contact layer in type heavy doping；
S2：Photoetching is carried out to structure described in S1, and using selective corrosion solution to contact layer and absorption in p-type heavy doping
Layer is corroded, and exposes portion collection layer；
S3：In structure upper surface grown silicon nitride layer described in S2, and the nitrogen of collecting layer upper surface is removed using photoetching process
SiClx layer；
S4：The collecting layer is corroded using selective corrosion solution, makes the area of the collecting layer and the suction
The area equation of layer is received, the collecting layer is continued to corrode afterwards, until the area of the collecting layer is less than the absorbed layer
Area, then removes silicon nitride layer；
S5：Using photoetching, Lift-off technique, contact layer upper surface grows upper electrode metal in the p-type heavy doping
Layer, and the contact layer upper surface growth bottom electrode metal level under addressed N-type heavy doping, then anneal, and form Ohmic contact；
S6：Planarization process is carried out to structure described in S5, and makes metal lead wire and pad, last cleavage completes device
Make.
Preferably, metal-organic chemical vapour deposition technique or molecular beam epitaxial growth N-type heavy doping are used in the S1
Lower contact layer, collecting layer, absorbed layer and contact layer in p-type heavy doping.
Preferably, the collecting layer is the layer of InP of n-type doping, and the absorbed layer is InGaAs layer of p-type doping.
Preferably, 2~3 layers of InGaAsP layer can be also grown between the collecting layer and absorbed layer.
Preferably, using metal-organic chemical vapour deposition technique or molecular beam epitaxial growth InGaAsP layer.
Preferably, when layer of InP is corroded, the selective corrosion solution is HCl and H3PO4Mixed solution；Work as corrosion
InGaAs layers or during InGaAsP layer, the selective corrosion solution is H2SO4、H2O2And H2The mixed solution of O.
Preferably, the photo-detector is top surface incidence or back of the body incidence structure.
Preferably, when the photo-detector is side incidence structure, contact layer under the SI-substrate and N-type heavy doping
Between also growth have ducting layer.
Preferably, the ducting layer is formed using dry etching or wet corrosion technique, wherein, the material of the ducting layer
It is InGaAsP.
The present invention also provides a kind of single file carrier photo-detector structure, and the photo-detector structure includes：
SI-substrate；
The contact layer under the N-type heavy doping of the SI-substrate upper surface；
The collecting layer of contact layer upper surface under the N-type heavy doping；
Under the N-type heavy doping contact layer upper surface, while positioned at the bottom electrode metal level of the collecting layer both sides；
Positioned at the absorbed layer of the collecting layer upper surface；
The contact layer in the p-type heavy doping of the absorbed layer upper surface；And
The upper electrode metal layer of contact layer upper surface in the p-type heavy doping；
Wherein, area of the area of the collecting layer less than the absorbed layer.
Preferably, the collecting layer is low-doped N-type layer of InP, and the absorbed layer is InGaAs layer of p-type doping.
Preferably, 2~3 layers of InGaAsP layer are additionally provided between the collecting layer and absorbed layer.
Preferably, the photo-detector is top surface incidence or back of the body incidence structure.
Preferably, when the photo-detector is side incidence structure, contact layer under the SI-substrate and N-type heavy doping
Between be additionally provided with a ducting layer, wherein, the ducting layer be InGaAsP layer.
As described above, single file carrier photo-detector structure of the invention and preparation method thereof, has the advantages that：
1. compared with traditional UTC-PD, the present invention produces collecting layer than absorbed layer area using the method for substep corrosion
Small device architecture, under the conditions of same absorbent thickness degree, area, the junction capacity of device architecture of the present invention is smaller, thus
With bigger RC responsive bandwidths；Under the conditions of absorber thickness identical, i.e. identical (the carrier transit of carrier transport bandwidth
Time is equal), device total bandwidth is higher；(RC bandwidth, get over band under the conditions of identical collecting layer area and same absorbent thickness degree
It is wide identical), structure of the present invention has bigger absorbed layer area, thus with bigger responsiveness, can it is higher enter
Penetrate under luminous power and work, be more suitable for the application of high-speed high-power.
2. structure fabrication processes of the present invention are simple, and the corrosion rate by control selections etchant solution and corruption
The erosion time so that it is controllable that collecting layer area reduces degree, it is easy to accomplish commercialization.
Brief description of the drawings
Fig. 1 is shown as the structural representation of traditional UTC-PD.
Fig. 2 to Figure 10 is shown as a kind of schematic diagram of UTC-PD structure fabrications process of the invention, wherein, Fig. 9 is Figure 10 edges
The profile in AA ' directions.
Figure 11 to Figure 19 is shown as the schematic diagram of another kind UTC-PD structure fabrication processes of the invention, wherein, Figure 18 is figure
19 along BB ' directions profile.
Component label instructions
1 SI-substrate
Contact layer under 2 N-type heavy doping
3 collecting layers
4 absorbed layers
Contact layer in 5 p-type heavy doping
6 silicon nitride layers
7 upper electrode metals layer
8 bottom electrode metal levels
9 metal lead wires
10 pads
11 ducting layers
S1~S6 steps
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages of the invention and effect easily.The present invention can also be by specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Refer to Fig. 2 to Figure 19.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with relevant component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, and the kenel of each component, quantity and ratio can be a kind of random change during its actual implementation, and its
Assembly layout kenel is likely to increasingly complex.
Embodiment one
The present embodiment provides a kind of preparation method of single file carrier photo-detector, and the preparation method includes：
S1：Contact layer, collecting layer, absorbed layer and P under growing N-type heavy doping successively from top to bottom on SI-substrate
Contact layer in type heavy doping；
S2：Photoetching is carried out to structure described in S1, and using selective corrosion solution to contact layer and absorption in p-type heavy doping
Layer is corroded, and exposes portion collection layer；
S3：In structure upper surface grown silicon nitride layer described in S2, and the nitrogen of collecting layer upper surface is removed using photoetching process
SiClx layer；
S4：The collecting layer is corroded using selective corrosion solution, makes the area of the collecting layer and the suction
The area equation of layer is received, the collecting layer is continued to corrode afterwards, until the area of the collecting layer is less than the absorbed layer
Area, then removes silicon nitride layer；
S5：Using photoetching, Lift-off technique, contact layer upper surface grows upper electrode metal in the p-type heavy doping
Layer, and the contact layer upper surface growth bottom electrode metal level under addressed N-type heavy doping, then anneal, and form Ohmic contact；
S6：Planarization process is carried out to structure described in S5, and makes metal lead wire and pad, last cleavage completes device
Make.
Fig. 2 to Figure 10 is referred to below to be described in detail preparation method described in the present embodiment.
As shown in Fig. 2 on the SI-substrate 1 from top to bottom successively contact layer 2 under growth N-type heavy doping, collecting layer 3,
Contact layer 5 on absorbed layer 4 and p-type heavy doping.
It should be noted that photo-detector described in the present embodiment is top surface incidence or back of the body incidence structure.
Specifically, raw on the SI-substrate 1 using metal-organic chemical vapour deposition technique or molecular beam epitaxy
Contact layer 2, collecting layer 3, absorbed layer 4 and contact layer 5 in p-type heavy doping under N-type heavy doping long.Preferably, in the present embodiment,
Each layer is grown using metal-organic chemical vapour deposition technique；The metal-organic chemical vapour deposition technique compared with molecular beam outside
Prolong, cost is lower.
Specifically, the SI-substrate 1 is semi-insulating InP substrate or half-insulating GaAs substrate；Preferably, in this implementation
In example, the SI-substrate 1 is semi-insulating InP substrate；Compared to half-insulating GaAs substrate, the semi-insulating InP substrate tool
There is high mobility.
Specifically, layer of InP of the collecting layer 3 for n-type doping, the absorbed layer 4 is InGaAs layer of p-type doping.
It should be noted that the doping concentration of the collecting layer 3 is generally 10^16 or so, the doping of the absorbed layer 4 is dense
Degree is generally 10^17~10^18.
Specifically, using metal-organic chemical vapour deposition technique or can also divide between the collecting layer 3 and absorbed layer 4
2~3 layers of InGaAsP layer of beamlet epitaxial growth, for smoothing band gap.
As shown in figure 3, photoetching is carried out to structure described in S1, and using selective corrosion solution to being contacted in p-type heavy doping
Layer 5 and absorbed layer 4 are corroded, and expose portion collection layer 3.
Specifically, when layer of InP is corroded, the selective corrosion solution is HCl and H3PO4Mixed solution；Work as corrosion
InGaAs layers or during InGaAsP layer, the selective corrosion solution is H2SO4、H2O2And H2The mixed solution of O.Due to the suction
It is InGaAs layers that p-type is adulterated to receive layer 4, so selective corrosion solution described in step is H2SO4、H2O2And H2The mixing of O is molten
Liquid.
It should be noted that the corrosion rate of the etchant solution and etchant solution with material thickness when to be corroded
It is related；Preferably, selective corrosion Solution H described in this step2SO4、H2O2And H2The mol ratio of O is 3:1:50, the selectivity
The corrosion rate of etchant solution is 80nm/min.Further by adjusting etching time, you can realize treating the corrosion of corrosion material
Area is controllable.
As shown in figure 4, in structure upper surface grown silicon nitride layer 6 described in S2, and using on photoetching process removal collecting layer 3
The silicon nitride layer on surface, obtains structure as shown in Figure 5.
As shown in fig. 6, corroding to the collecting layer 3 using selective corrosion solution, make the area of the collecting layer 3
With the area equation of the absorbed layer 4, afterwards as shown in fig. 7, continuing to corrode to the collecting layer 3, until the collecting layer 3
Area is less than the area of the absorbed layer 4, then as shown in figure 8, removal silicon nitride layer 6.
Specifically, when layer of InP is corroded, the selective corrosion solution is HCl and H3PO4Mixed solution；Work as corrosion
InGaAs layers or during InGaAsP layer, the selective corrosion solution is H2SO4、H2O2And H2The mixed solution of O.Due to the receipts
Integrate layer of InP of the layer 3 as n-type doping, so selective corrosion solution described in step is HCl and H3PO4Mixed solution.
It should be noted that the corrosion rate of the etchant solution and etchant solution with material thickness when to be corroded
It is related；Preferably, selective corrosion Solution H Cl and H described in this step3PO4Mol ratio be 1:3, the selective corrosion solution
Corrosion rate be 500nm/min.Further by adjusting etching time, you can realization treats that the corroded area of corrosion material can
Control.
As shown in figure 9, electric in the upper surface of contact layer 5 growth in the p-type heavy doping using photoetching, Lift-off technique
Pole metal level 7, and the upper surface of the contact layer 2 growth bottom electrode metal level 8 under addressed N-type heavy doping, then anneal, and form Europe
Nurse is contacted.
As shown in Figure 10, planarization process is carried out to structure described in S5, and makes metal lead wire 9 and pad 10, finally solved
Reason, completes element manufacturing.
It should be noted that RC responsive bandwidths are improved to reduce parasitic capacitance, can be using BCB (benzocyclobutene) or poly-
Acid imide etc. covers table top, carries out device planarization；Also function to be passivated, reduce the effect of dark current simultaneously.
It should be noted that the signal end of pad 10 and ground spacing ensure its characteristic impedance for 50 ohms, metal draws
Line 9 is used to be connected less device termination electrode with pad wider.
Embodiment two
As shown in Figure 9 and Figure 10, the present embodiment provides a kind of single file carrier photo-detector structure, the photo-detector knot
Structure includes：
SI-substrate 1；
The contact layer 2 under the N-type heavy doping of the upper surface of the SI-substrate 1；
The collecting layer 3 of the upper surface of contact layer 2 under the N-type heavy doping；
Under the N-type heavy doping upper surface of contact layer 2, while positioned at the bottom electrode metal of the both sides of the collecting layer 3
Layer 8；
Positioned at the absorbed layer 4 of the upper surface of the collecting layer 3；
The contact layer 5 in the p-type heavy doping of the upper surface of the absorbed layer 4；And
The upper electrode metal layer 7 of the upper surface of contact layer 5 in the p-type heavy doping；
Wherein, area of the area of the collecting layer 3 less than the absorbed layer 4.
Specifically, the collecting layer is low-doped N-type layer of InP, the absorbed layer is InGaAs layer of p-type doping.
Specifically, being additionally provided with 2~3 layers of InGaAsP layer between the collecting layer and absorbed layer.
Specifically, the photo-detector is top surface incidence or back of the body incidence structure.
Embodiment three
The present embodiment provides a kind of preparation method of single file carrier photo-detector, and the preparation method includes：
S1：Contact layer, collecting layer, absorption under growing ducting layer, N-type heavy doping successively from top to bottom on SI-substrate
Contact layer on layer and p-type heavy doping；
S2：Photoetching is carried out to structure described in S1, and using selective corrosion solution to contact layer and absorption in p-type heavy doping
Layer is corroded, and exposes portion collection layer；
S3：In structure upper surface grown silicon nitride layer described in S2, and the nitrogen of collecting layer upper surface is removed using photoetching process
SiClx layer；
S4：The collecting layer is corroded using selective corrosion solution, makes the area of the collecting layer and the suction
The area equation of layer is received, the collecting layer is continued to corrode afterwards, until the area of the collecting layer is less than the absorbed layer
Area, then removes silicon nitride layer；
S5：Using photoetching, Lift-off technique, contact layer upper surface grows upper electrode metal in the p-type heavy doping
Layer, and the contact layer upper surface growth bottom electrode metal level under addressed N-type heavy doping, then anneal, and form Ohmic contact；
S6：Planarization process is carried out to structure described in S5, and makes metal lead wire and pad, last cleavage completes device
Make.
Figure 11 to Figure 18 is referred to below to be described in detail preparation method described in the present embodiment.
As shown in figure 11, contact layer under growing ducting layer 11, N-type heavy doping successively from top to bottom on SI-substrate 1
2nd, collecting layer 3, absorbed layer 4 and contact layer 5 in p-type heavy doping.
It should be noted that photo-detector described in the present embodiment is side incidence structure.
First, the ducting layer 11 is grown on the SI-substrate 1 using dry etching or wet corrosion technique, its
In, the material of the ducting layer 11 is InGaAsP.
Then, N-type weight is grown on the ducting layer using metal-organic chemical vapour deposition technique or molecular beam epitaxy
Doping lower contact layer 2, collecting layer 3, absorbed layer 4 and contact layer 5 in p-type heavy doping.Preferably, in the present embodiment, using gold
Category-organic chemical vapor deposition method grows each layer；The metal-organic chemical vapour deposition technique compared with molecular beam epitaxy, into
This is lower.
Specifically, the SI-substrate 1 is semi-insulating InP substrate or half-insulating GaAs substrate；Preferably, in this implementation
In example, the SI-substrate 1 is semi-insulating InP substrate；Compared to half-insulating GaAs substrate, the semi-insulating InP substrate tool
There is high mobility.
Specifically, layer of InP of the collecting layer 3 for n-type doping, the absorbed layer 4 is InGaAs layer of p-type doping.
It should be noted that the doping concentration of the collecting layer 3 is generally 10^16 or so, the doping of the absorbed layer 4 is dense
Degree is generally 10^17~10^18.
Specifically, using metal-organic chemical vapour deposition technique or can also divide between the collecting layer 3 and absorbed layer 4
2~3 layers of InGaAsP layer of beamlet epitaxial growth, for smoothing band gap.
As shown in figure 12, photoetching is carried out to structure described in S1, and using selective corrosion solution to being contacted in p-type heavy doping
Layer 5 and absorbed layer 4 are corroded, and expose portion collection layer 3.
Specifically, when layer of InP is corroded, the selective corrosion solution is HCl and H3PO4Mixed solution；Work as corrosion
InGaAs layers or during InGaAsP layer, the selective corrosion solution is H2SO4、H2O2And H2The mixed solution of O.Due to the suction
It is InGaAs layers that p-type is adulterated to receive layer 4, so selective corrosion solution described in step is H2SO4、H2O2And H2The mixing of O is molten
Liquid.
It should be noted that the corrosion rate of the etchant solution and etchant solution with material thickness when to be corroded
It is related；Preferably, selective corrosion Solution H described in this step2SO4、H2O2And H2The mol ratio of O is 3:1:50, the selectivity
The corrosion rate of etchant solution is 80nm/min.Further by adjusting etching time, you can realize treating the corrosion of corrosion material
Area is controllable.
As shown in figure 13, in structure upper surface grown silicon nitride layer 6 described in S2, and collecting layer 3 is removed using photoetching process
The silicon nitride layer of upper surface, obtains structure as shown in figure 14.
As shown in figure 15, the collecting layer 3 is corroded using selective corrosion solution, makes the face of the collecting layer 3
Product and the area equation of the absorbed layer 4, afterwards as shown in figure 16, continue to corrode, until the collecting layer to the collecting layer 3
Then as shown in figure 17 3 area, removes silicon nitride layer 6 less than the area of the absorbed layer 4.
Specifically, when layer of InP is corroded, the selective corrosion solution is HCl and H3PO4Mixed solution；Work as corrosion
InGaAs layers or during InGaAsP layer, the selective corrosion solution is H2SO4、H2O2And H2The mixed solution of O.Due to the receipts
Integrate layer of InP of the layer 3 as n-type doping, so selective corrosion solution described in step is HCl and H3PO4Mixed solution.
It should be noted that the corrosion rate of the etchant solution and etchant solution with material thickness when to be corroded
It is related；Preferably, selective corrosion Solution H Cl and H described in this step3PO4Mol ratio be 1:3, the selective corrosion solution
Corrosion rate be 500nm/min.Further by adjusting etching time, you can realization treats that the corroded area of corrosion material can
Control.
As shown in figure 18, using photoetching, Lift-off technique in the upper surface of contact layer 5 growth in the p-type heavy doping
Electrode metal layer 7, and the upper surface of the contact layer 2 growth bottom electrode metal level 8 under addressed N-type heavy doping, then anneal, and are formed
Ohmic contact.
As shown in figure 19, planarization process is carried out to structure described in S5, and makes metal lead wire 9 and pad 10, finally solved
Reason, completes element manufacturing.
It should be noted that RC responsive bandwidths are improved to reduce parasitic capacitance, can be using BCB (benzocyclobutene) or poly-
Acid imide etc. covers table top, carries out device planarization；Also function to be passivated, reduce the effect of dark current simultaneously.
It should be noted that the signal end of pad 10 and ground spacing ensure its characteristic impedance for 50 ohms, metal draws
Line 9 is used to be connected less device termination electrode with pad wider.
Example IV
As shown in Figure 18 and Figure 19, the present embodiment provides a kind of single file carrier photo-detector structure, the photo-detector
Structure includes：
SI-substrate 1；
Positioned at the ducting layer 11 of the upper surface of the SI-substrate 1；
The contact layer 2 under the N-type heavy doping of the upper surface of the ducting layer 11；
The collecting layer 3 of the upper surface of contact layer 2 under the N-type heavy doping；
Under the N-type heavy doping upper surface of contact layer 2, while positioned at the bottom electrode metal of the both sides of the collecting layer 3
Layer 8；
Positioned at the absorbed layer 4 of the upper surface of the collecting layer 3；
The contact layer 5 in the p-type heavy doping of the upper surface of the absorbed layer 4；And
The upper electrode metal layer 7 of the upper surface of contact layer 5 in the p-type heavy doping；
Wherein, area of the area of the collecting layer 3 less than the absorbed layer 4.
Specifically, the ducting layer is InGaAsP layer, the collecting layer is low-doped N-type layer of InP, the absorbed layer
It is InGaAs layers of p-type doping.
Specifically, being additionally provided with 2~3 layers of InGaAsP layer between the collecting layer and absorbed layer.
Specifically, the photo-detector is side incidence structure.
In sum, single file carrier photo-detector structure of the invention and preparation method thereof, has the advantages that：
1. compared with traditional UTC-PD, the present invention produces collecting layer than absorbed layer area using the method for substep corrosion
Small device architecture, under the conditions of same absorbent thickness degree, area, the junction capacity of device architecture of the present invention is smaller, thus
With bigger RC responsive bandwidths；Under the conditions of absorber thickness identical, i.e. identical (the carrier transit of carrier transport bandwidth
Time is equal), device total bandwidth is higher；(RC bandwidth, get over band under the conditions of identical collecting layer area and same absorbent thickness degree
It is wide identical), structure of the present invention has bigger absorbed layer area, thus with bigger responsiveness, can it is higher enter
Penetrate under luminous power and work, be more suitable for the application of high-speed high-power.
2. structure fabrication processes of the present invention are simple, and the corrosion rate by control selections etchant solution and corruption
The erosion time so that it is controllable that collecting layer area reduces degree, it is easy to accomplish commercialization.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit such as
Into all equivalent modifications or change, should be covered by claim of the invention.
Claims (14)
1. a kind of preparation method of single file carrier photo-detector, it is characterised in that the preparation method includes：
S1：Contact layer, collecting layer, absorbed layer and p-type weight under growing N-type heavy doping successively from top to bottom on SI-substrate
Contact layer in doping；
S2：Photoetching is carried out to structure described in S1, and contact layer in p-type heavy doping and absorbed layer are entered using selective corrosion solution
Row corrosion, exposes portion collection layer；
S3：In structure upper surface grown silicon nitride layer described in S2, and the silicon nitride of collecting layer upper surface is removed using photoetching process
Layer；
S4：The collecting layer is corroded using selective corrosion solution, makes the area of the collecting layer and the absorbed layer
Area equation, afterwards to the collecting layer continue corrode, until the area of the collecting layer less than the absorbed layer area,
Then silicon nitride layer is removed；
S5：Using photoetching, Lift-off technique, contact layer upper surface grows upper electrode metal layer in the p-type heavy doping, and
Contact layer upper surface growth bottom electrode metal level, then anneals under addressed N-type heavy doping, forms Ohmic contact；
S6：Planarization process is carried out to structure described in S5, and makes metal lead wire and pad, last cleavage completes element manufacturing.
2. the preparation method of single file carrier photo-detector according to claim 1, it is characterised in that used in the S1
Contact layer, collecting layer, absorbed layer and p-type under metal-organic chemical vapour deposition technique or molecular beam epitaxial growth N-type heavy doping
Contact layer in heavy doping.
3. the preparation method of single file carrier photo-detector according to claim 1, it is characterised in that the collecting layer is
The layer of InP of n-type doping, the absorbed layer is InGaAs layer of p-type doping.
4. the preparation method of single file carrier photo-detector according to claim 1, it is characterised in that the collecting layer with
2~3 layers of InGaAsP layer can be also grown between absorbed layer.
5. the preparation method of single file carrier photo-detector according to claim 4, it is characterised in that using metal-have
Machine thing chemical vapour deposition technique or molecular beam epitaxial growth InGaAsP layer.
6. the preparation method of single file carrier photo-detector according to claim 1, it is characterised in that when corrosion layer of InP
When, the selective corrosion solution is HCl and H3PO4Mixed solution；When InGaAs layers or InGaAsP layer is corroded, the choosing
Selecting property etchant solution is H2SO4、H2O2And H2The mixed solution of O.
7. the preparation method of single file carrier photo-detector according to claim 1, it is characterised in that the photo-detector
For top surface is incident or back of the body incidence structure.
8. the preparation method of single file carrier photo-detector according to claim 1, it is characterised in that when the optical detection
When device is side incidence structure, also growth has ducting layer between contact layer under the SI-substrate and N-type heavy doping.
9. the preparation method of single file carrier photo-detector according to claim 8, it is characterised in that use dry etching
Or wet corrosion technique forms the ducting layer, wherein, the material of the ducting layer is InGaAsP.
10. a kind of single file carrier photo-detector structure, it is characterised in that the photo-detector structure includes：
SI-substrate；
The contact layer under the N-type heavy doping of the SI-substrate upper surface；
The collecting layer of contact layer upper surface under the N-type heavy doping；
Under the N-type heavy doping contact layer upper surface, while positioned at the bottom electrode metal level of the collecting layer both sides；
Positioned at the absorbed layer of the collecting layer upper surface；
The contact layer in the p-type heavy doping of the absorbed layer upper surface；And
The upper electrode metal layer of contact layer upper surface in the p-type heavy doping；
Wherein, area of the area of the collecting layer less than the absorbed layer.
11. single file carrier photo-detector structures according to claim 10, it is characterised in that the collecting layer is low-mix
Miscellaneous N-type layer of InP, the absorbed layer is InGaAs layer of p-type doping.
12. single file carrier photo-detector structures according to claim 10, it is characterised in that the collecting layer and absorption
2~3 layers of InGaAsP layer are additionally provided between layer.
13. single file carrier photo-detector structures according to claim 10, it is characterised in that the photo-detector is top
Face is incident or carries on the back incidence structure.
14. single file carrier photo-detector structures according to claim 10, it is characterised in that when the photo-detector is
During the incidence structure of side, a ducting layer is additionally provided between contact layer under the SI-substrate and N-type heavy doping, wherein, the ripple
Conducting shell is InGaAsP layer.
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| CN113707742A (en) * | 2021-08-25 | 2021-11-26 | 江苏索尔思通信科技有限公司 | High-speed photoelectric detector and preparation method thereof |
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| US20220399471A1 (en) * | 2019-11-18 | 2022-12-15 | Nippon Telegraph And Telephone Corporation | Optical Receiving Element and Manufacturing Method Therefor |
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