CN110544732B - Single-row carrier photodiode - Google Patents
Single-row carrier photodiode Download PDFInfo
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- CN110544732B CN110544732B CN201910807033.XA CN201910807033A CN110544732B CN 110544732 B CN110544732 B CN 110544732B CN 201910807033 A CN201910807033 A CN 201910807033A CN 110544732 B CN110544732 B CN 110544732B
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- 230000003647 oxidation Effects 0.000 claims abstract description 95
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 55
- 238000010521 absorption reaction Methods 0.000 claims description 45
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 230000004044 response Effects 0.000 abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 74
- 238000010586 diagram Methods 0.000 description 11
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 239000002356 single layer Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
Abstract
Embodiments of the present invention provide a single-row carrier photodiode that obtains a partially oxidized collection region by subjecting a portion of the structure in a conventional collection region to a wet nitrogen oxidation process. The oxide insulating layer formed by the partial structure of the oxidation process has lower refractive index, so that the parasitic junction capacitance of the single-row carrier photodiode is reduced, the RC time constant is reduced, and the response speed of the single-row carrier photodiode is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a single-row carrier photodiode.
Background
A Photodiode (PD) is an important photoelectric conversion device, has wide application in the fields of economic and military applications, and is a core device of application systems such as optical fiber communication, ultra-wideband wireless communication, missile guidance, infrared imaging, remote sensing, and the like. The response rate is one of the important indexes of PD, reflecting the high-frequency response capability of the device.
In 1997, a single-carrier photodiode (UTC-PD) invented by japanese researchers greatly increased the response rate of the photodiode. The UTC-PD is improved on the structure of a conventional PIN-PD (P-type semiconductor-impurity-N-type semiconductor), and an i-type absorption region thereof is changed into a P-type absorption region and a wide band gap carrier collection region.
The UTC-PD takes the photo-generated electrons as main transport carriers, changes the working mode that the photo-generated holes and the photo-generated electrons are jointly used as transport carriers in the traditional PIN-PD, greatly reduces the space charge effect and greatly improves the response rate. In order to further improve the high frequency characteristics of UTC-PD, the invention provides a novel UTC-PD with an oxidation-type collecting region.
Disclosure of Invention
In order to further improve the response rate of the UTC-PD and improve the high-frequency performance of the UTC-PD, the embodiment of the invention provides a single-row carrier photodiode, wherein a collecting region of the single-row carrier photodiode is a partially oxidized collecting region, and an oxidized part of the collecting region is prepared from an Al-containing component material through a wet nitrogen oxidation process.
Preferably, the single-carrier photodiode further includes a p-type absorption region overlying the partially oxidized collection region, the p-type absorption region being comprised of both a GaAs material and an AlGaAs material.
Preferably, the oxidized portion is located at an edge region of the partial oxidation type collection region.
Preferably, the partial oxidation type collecting region is an insertion oxidation layer type collecting region or an Al component graded collecting region; the insertion oxidation layer type collecting region comprises a plurality of first oxidation layers and a plurality of first non-oxidation layers which are alternately covered from bottom to top in sequence; the first oxidation layer comprises a first oxidation area oxidized by the oxidation process and a first non-oxidation area not oxidized by the oxidation process, the first oxidation area is positioned in the edge area of the first oxidation layer, and the first non-oxidation area is positioned in the area within the edge of the first oxidation layer; the Al component graded collection region comprises a second oxidation region oxidized by the oxidation process and a second non-oxidation region not oxidized by the oxidation process; the second oxidation area is positioned in the edge area of the Al component gradual change type collection area, and the second non-oxidation area is positioned in the area within the edge of the Al component gradual change type collection area; the Al components of the second oxidation area and the second non-oxidation area are gradually changed from top to bottom, and the shape of the second oxidation area is a trapezoid; accordingly, the oxidized portion is the first oxidation zone or the second oxidation zone.
Preferably, the materials of the first oxidation layer, the second oxidation region and the second non-oxidation region are all materials containing Al components, and the Al components are less than 45%; if the material of the first non-oxidation layer is InP, the material of the first oxidation layer is one or more of InAlAs, InAlSb, AlGaSb, AlGaAsSb, AlGaInAs and AlInAsSb; if the material of the first non-oxide layer is AlGaAs, the material of the first oxide layer is also AlGaAs, and the Al composition of the first oxide layer is higher than that of the first non-oxide layer; the material of the second oxide region and the second non-oxide region may be one or more of AlGaAs, InAlAs, InAlSb, algassb, AlGaAsSb, and AlInAsSb.
Preferably, the single-carrier photodiode may further include a p-type absorption region overlying the partially oxidized collection region, the p-type absorption region being comprised of both a GaAs material and an AlGaAs material.
Preferably, the p-type absorption region is a p-type graded absorption region or a step gradient distribution type absorption region; the p-type graded absorption region is made of p-type graded doped GaAs material and AlGaAs material shared by graded components, or p-type graded doping, or the graded components and the p-type graded doping; the step distribution type absorption region is made of a GaAs material doped in a p-type step gradient distribution type, a GaAs material doped in a step gradient distribution type, p-type step gradient distribution doping, or an AlGaAs material shared by the step gradient distribution type and the p-type step gradient distribution doping.
Preferably, the doping concentration of the AlGaAs material in the p-type absorption region is greater than 5 × 1017The absorption wavelength range of the p-type absorption region covers up to 850nm or even longer.
Preferably, the single-row carrier photodiode further comprises a diffusion barrier layer, a p-type contact layer and an n-type contact layer, wherein the diffusion barrier layer and the p-type contact layer are sequentially arranged above the p-type absorption region from bottom to top, and the n-type contact layer is arranged below the partial oxidation type collection region.
Preferably, the single-row carrier photodiode further comprises a cliff layer, a spacer layer and a subcollector layer, wherein the cliff layer and the spacer layer are sequentially arranged between the partial oxidation type collecting region and the p-type absorption region from bottom to top, and the subcollector layer is arranged between the partial oxidation type collecting region and the n-type contact layer.
Preferably, the oxidized portion has a refractive index of less than 2.5 and the oxidation process is wet oxynitridation.
Embodiments of the present invention provide a single-row carrier photodiode that obtains a partially oxidized collection region by subjecting a portion of the structure in a conventional collection region to a wet nitrogen oxidation process. The oxide insulating layer formed by oxidizing the partial structure of the collecting region has lower refractive index, so that the parasitic junction capacitance of the single-row carrier photodiode is reduced, the RC time constant is reduced, and the response rate of the single-row carrier photodiode is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art single-row carrier photodiode;
FIG. 2 is a schematic diagram of a single-row carrier photodiode in the collection region of an interposed oxide layer according to an embodiment of the invention;
FIG. 3 is a detailed structural diagram of an interposed oxide type collection region according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a single-row carrier photodiode in an Al composition graded collection region according to an embodiment of the present invention;
FIG. 5 is a schematic view of a single-layer plug-in oxide type collection region according to an embodiment of the present invention;
FIG. 6 is a diagram of a prior art band structure for a single-row carrier photodiode;
FIG. 7 is a diagram illustrating a graded absorption band of a single-row carrier photodiode according to an embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating a step-gradient distribution of energy bands in an absorption region of a single-row carrier photodiode according to an embodiment of the present invention;
wherein:
1. p-electrode 2, p-type contact layer 3, diffusion barrier layer
4. p-type absorption region 5, partial oxidation type collection region 51, and first oxidation layer
52. A first non-oxide layer 511, a first oxide region 512, a first non-oxide region
53. A second oxide region 54, a second non-oxide region 6, and an n-electrode
7. An n-type contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a single-row carrier photodiode in the prior art, and fig. 1 shows a structure of a single-row carrier photodiode in the prior art.
Fig. 2 is a schematic structural view of a single-row carrier photodiode in an insertion-type oxide layer collection region according to an embodiment of the present invention, fig. 3 is a schematic structural view of an insertion-type oxide layer collection region according to an embodiment of the present invention, fig. 4 is a schematic structural view of a single-row carrier photodiode in an Al composition graded collection region according to an embodiment of the present invention, and as shown in fig. 2, fig. 3, and fig. 4, a partially oxidized collection region 5 is an insertion-type oxide layer collection region or an Al composition graded collection region; wherein, the insertion oxidation layer type collecting region comprises a plurality of first oxidation layers 51 and a plurality of first non-oxidation layers 52 which are alternately covered from bottom to top in sequence; the first oxide layer 51 comprises a first oxide region 511 oxidized by an oxidation process and a first non-oxide region 512 not oxidized by the oxidation process, the first oxide region 511 is located in an edge region of the first oxide layer 51, and the first non-oxide region 512 is located in an inner region of the edge of the first oxide layer 51; the Al composition graded collection region includes a second oxidation region 53 oxidized by the oxidation process and a second non-oxidation region 54 not oxidized by the oxidation process; the second oxidation zone 53 is located in the edge region of the Al composition graded collection zone, and the second non-oxidation zone 54 is located in the region inside the edge of the Al composition graded collection zone; the Al composition of the second oxidized region 53 and the second non-oxidized region 54 is a gradual change composition from top to bottom, and the second oxidized region 53 has a trapezoidal shape; accordingly, the oxidized portion is the first oxidation region 511 or the second oxidation region 53.
Specifically, the length of the oxidized region of each first oxide layer 51 may be the same or different for the insertion-oxidized-layer type collector region, and similarly, the length of the non-oxidized region of each first oxide layer 51 may be the same or different.
Specifically, the sum of the thicknesses of the plurality of first oxide layers 51 is less than the thickness of the interposed oxide-type collecting region, the sum of the thicknesses of the plurality of first non-oxide layers 52 is less than the thickness of the interposed oxide-type collecting region, and the lengths of the non-oxide regions of the first oxide layers 51 are all less than the length of the first oxide layer 51.
Fig. 5 is a schematic structural view of a single-layer insertion oxide type collection region according to an embodiment of the present invention, and as shown in fig. 5, if the insertion oxide type collection region has only the first oxide layer 51, the insertion oxide type collection region is a single-layer insertion oxide type collection region.
Based on the above embodiment, the materials of the first oxidized region 51, the second oxidized region 53, and the second non-oxidized region 54 are all materials containing an Al component, the Al component being less than 45%; accordingly, if the material of the first non-oxide layer 52 is InP, the material of the first oxide layer 51 is one or more of InAlAs, InAlSb, algassb, AlGaAsSb, AlGaInAs, and AlInAsSb, and is generally the same material; if the material of the first non-oxide layer 52 is AlGaAs, the material of the first oxide layer 51 is also AlGaAs, and the Al composition of the first oxide layer 51 is higher than the Al composition in the first non-oxide layer; accordingly, the material of the second oxide region 53 and the second non-oxide region 54 is one or more of InAlAs, InAlSb, algassb, AlGaAsSb, AlGaInAs and AlInAsSb, typically the same material.
It is emphasized that the material in the same layer is the same before the oxidation process, and the material obtained by oxidation after the oxidation process is different from the material that is not oxidized.
Fig. 6 is a diagram illustrating an energy band structure of a single-row carrier photodiode in the prior art, fig. 7 is a schematic diagram illustrating a graded absorption region energy band of the single-row carrier photodiode according to an embodiment of the present invention, and fig. 8 is a schematic diagram illustrating a step-type gradient distribution of the absorption region energy band of the single-row carrier photodiode according to an embodiment of the present invention, as shown in fig. 6, 7 and 8, a p-type absorption region 4 of the single-row carrier photodiode according to an embodiment of the present invention is a graded absorption region or a step-type gradient distribution absorption region; the graded absorption region is made of p-type graded doped GaAs material and AlGaAs material shared by graded components, or p-type graded doping, or the graded components and the p-type graded doping; the step gradient distribution type absorption region is made of a GaAs material doped in a p-type step gradient distribution type, a GaAs material doped in a step gradient distribution type, p-type step gradient distribution doping or an AlGaAs material shared by the step gradient distribution type and the p-type step gradient distribution doping.
Specifically, the AlGaAs material is doped to a concentration of more than 5 × 1017The energy band gap of the AlGaAs material is narrowed, and the absorption wavelength is extended to 850nm or more, so that the p-type absorption region 4 can be formed together with the GaAs material.
Specifically, the single-row carrier photodiode further comprises a diffusion barrier layer 3, a p-type contact layer 2 and an n-type contact layer 7, wherein the diffusion barrier layer 3 and the p-type contact layer 2 are sequentially arranged above the p-type absorption region 4 from bottom to top, and the n-type contact layer 7 is arranged below the partial oxidation type collection region 5.
Specifically, a p-electrode 1 is arranged above the p-type contact layer 2, and an n-electrode 6 is arranged above the n-type contact layer 7.
Preferably, the single-row carrier photodiode further comprises a cliff layer, a spacer layer and a subcollector layer, wherein the cliff layer and the spacer layer are sequentially arranged between the partial oxidation type collecting region 5 and the p-type absorption region 4 from bottom to top, and the subcollector layer is arranged between the partial oxidation type collecting region 5 and the n-type contact layer 7.
According to the single-row carrier photodiode provided by the invention, selective wet oxidation is carried out in the collecting region structure, so that part of the structure in the collecting region forms the oxide insulating layer with low refractive index (<2.5), the parasitic junction capacitance of the single-row carrier photodiode is reduced, the RC time constant is reduced, and the response rate of the single-row carrier photodiode is improved; and aiming at the 850nm single-row carrier photodiode, AlGaAs material is added into the absorption region, and the component gradient or step gradient distribution, p-type doping gradient or step gradient distribution are carried out on the AlGaAs material, so that the forbidden bandwidth of the material in the absorption region is changed gradually or in a gradient manner, and the gradient or built-in electric field is improved, therefore, the drift rate of electrons is increased, the transit time is reduced, and the high-frequency response characteristic of the single-row carrier photodiode is improved.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. The single-row carrier photodiode is characterized in that a collecting region is a partial oxidation type collecting region, and an oxidation part in the partial oxidation type collecting region is prepared from a material containing an Al component through an oxidation process, wherein the oxidation part is positioned in the edge region of the partial oxidation type collecting region;
the AlGaAs material is added into a p-type absorption region aiming at the 850nm single-row carrier photodiode, and the 850nm single-row carrier photodiode is subjected to component gradient or step gradient distribution, p-type doping gradient or step gradient distribution.
2. The single-carrier photodiode of claim 1, further comprising a p-type absorption region overlying the partially oxidized collection region, the p-type absorption region being comprised of both GaAs and AlGaAs materials.
3. The single-row carrier photodiode of claim 1, wherein the partially oxidized collection region is an intervening oxide type collection region or an Al composition graded collection region;
the inserted oxidation layer type collecting region comprises a plurality of first oxidation layers and a plurality of first non-oxidation layers which are alternately covered from bottom to top in sequence; the first oxidation layer comprises a first oxidation area oxidized by the oxidation process and a first non-oxidation area which is not oxidized, the first oxidation area is positioned in the edge area of the first oxidation layer, and the first non-oxidation area is positioned in the area within the edge of the first oxidation layer;
the Al component graded collection region comprises a second oxidation region which is oxidized by the oxidation process and a second non-oxidation region which is not oxidized; the second oxidation area is positioned in the edge area of the Al component gradual change type collection area, and the second non-oxidation area is positioned in the area inside the edge of the Al component gradual change type collection area; the Al components of the second oxidation area and the second non-oxidation area are gradually changed from top to bottom, and the second oxidation area and the second non-oxidation area are trapezoidal;
accordingly, the oxidized portion is the first oxidation zone or the second oxidation zone.
4. The single-row carrier photodiode of claim 3, wherein the first oxidized region, the second oxidized region, and the second non-oxidized region are each a material comprising the Al component, the Al component being less than 45%;
correspondingly, if the material of the first non-oxidation layer is InP, the material of the first oxidation layer before the oxidation process is one or more of InAlAs, InAlSb, AlGaSb, AlGaAsSb, AlGaInAs and AlInAsSb; if the material of the first non-oxide layer is AlGaAs, the material of the first oxide layer before the oxidation process is also AlGaAs, and the Al composition of the first oxide layer is higher than that of the first non-oxide layer;
accordingly, the material of the second oxide region and the second non-oxide region before the oxidation process is one or more of InAlAs, InAlSb, algassb, AlGaAsSb, AlGaInAs and AlInAsSb.
5. The single-row carrier photodiode of claim 2,
the p-type absorption region is a p-type graded absorption region or a step gradient distribution type absorption region;
the p-type graded absorption region is made of p-type graded doped GaAs material and AlGaAs material shared by graded components, or p-type graded doping, or the graded components and the p-type graded doping; the step gradient distribution type absorption region is made of a GaAs material doped in a p-type step gradient distribution type, a step gradient distribution component, p-type step gradient distribution doping or a AlGaAs material shared by the step gradient distribution component and the p-type step gradient distribution doping.
6. The single-carrier photodiode of claim 5, wherein the doping concentration of the AlGaAs material in the p-type absorption region is greater than 5 x 1017 -3cmThe absorption wavelength range extends to 850nm or even longer.
7. The single-row carrier photodiode of claim 1, further comprising
The diffusion barrier layer and the p-type contact layer are sequentially arranged above the p-type absorption region from bottom to top, and the n-type contact layer is connected with the p-type absorption region
The contact layer is arranged below the partial oxidation type collecting region.
8. The single-row carrier photodiode of claim 7, further comprising a cliff layer, a spacer layer, and a subcollector layer, wherein the cliff layer and the spacer layer are disposed between the partially oxidized collection region and the p-type absorption region in a bottom-to-top sequence, and the subcollector layer is disposed between the partially oxidized collection region and the n-type contact layer.
9. The single-row carrier photodiode of claim 1, wherein the oxidized portion has a refractive index of less than 2.5, and the oxidation process is wet oxynitridation.
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