CN102820369B - Three-family nitride-based phototransistor and manufacturing method thereof - Google Patents
Three-family nitride-based phototransistor and manufacturing method thereof Download PDFInfo
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- CN102820369B CN102820369B CN201210314694.7A CN201210314694A CN102820369B CN 102820369 B CN102820369 B CN 102820369B CN 201210314694 A CN201210314694 A CN 201210314694A CN 102820369 B CN102820369 B CN 102820369B
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Abstract
The invention discloses a three-family nitride-based phototransistor with a lattice matching light transmission widow and a manufacturing method thereof. According to the three-family nitride-based phototransistor provided by the invention, a three-family nitride or another multi-element alloy material which is identical to the material of a light absorbing layer in an a-axis lattice constant but larger than the material of the light absorbing layer in forbidden bandwidth is used as a light transmission widow layer, so that the crystal quality of the window layer and an epitaxial layer on the window layer can be improved, and defects of the window layer and the epitaxial layer on the window layer can be restrained. Therefore, the working property of the three-family nitride-based phototransistor can be improved. Three-family element component gradient layer is used as a transition layer, so that the band step is in smooth transition; and the photo-production carrier collection efficiency can be improved. Therefore, the three-family nitride-based phototransistor with the good properties can be prepared.
Description
Technical field
The present invention relates to use III-nitride or its multicomponent alloy material to prepare the technical field of III-nitride base photo transistor detector part, relate in particular to and use III-nitride or the preparation of its multicomponent alloy material to there is III-nitride base phototransistor of Lattice Matching light-transmissive window layer and preparation method thereof.
Background technology
Recently between decades, group iii nitride semiconductor material has been obtained development at full speed in the technical fields such as epitaxial growth, make it can prepare a series of well behaved photodetection III-nitride base phototransistors, as III-nitride photoconductive detector, Schottky photo diode, PIN photodiode, avalanche photodide and phototransistor etc.In the photodetection III-nitride base phototransistor of these types, III-nitride base photo transistor detector can obtain down higher gain due to it under lower operating voltage, and III-nitride base phototransistor has relatively high functional reliability and received concern simultaneously.Just because of these advantages, attracted the attention of numerous researchers and manufacturer.Yet, nonetheless, still have many problems urgently to be resolved hurrily.
Look back the current research for III-nitride base photo transistor detector, as the people such as Wei Yang of U.S. APA company, at its article High gain GaN/AlGaN heterojunction phototransistor(1998 Applied in August Physics Letters, Vol. 73, No. 7) in, although successfully develop the back incident-type GaN base ultraviolet light electric transistor detector with high-gain, it is the III-nitride base photoelectric crystal tubular construction of back of the body incident.Adopt the mode of back of the body incident need to face two hang-ups: the first, search out the transparent substrate of light transmission wave band; The second, in transparent substrates, first grow III-nitride that broad stopband width is larger or its multicomponent alloy material as Window layer.This epitaxial growth method requires high to growing technology, be difficult to obtain good crystal mass simultaneously.
The people such as the Robert Mouillet of Osaka, Japan gas companies are at its article Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer(2001 Jpn. J. Appl. Phys, Vol. 40, pp. L498-L501), although adopted the mode of normal incidence, but what adopt due to light transmissive side is that the N-shaped GaN material of 0.6 μ m is made collector layer and light-transmissive window layer is not set, therefore efficiency of light absorption is lower, affect the detectivity of III-nitride base phototransistor.
2008, the people such as M. L. Lee were at its article Ultraviolet bandpass Al
0.17ga
0.83n/GaN heterojunction phototransitors with high optical gain and high rejection ratio(2008 Applied Physics Letters, Vol. 92, 053506) in, although be provided with compared with the AlGaN material of broad stopband width as light-transmissive window layer, avoided the absorption of material to light, but this structure is the AlGaN light-transmissive window layer of growing in GaN structure, a shaft lattice constant difference between bi-material is large, it is not the extension pattern of coherent growth, therefore be difficult to obtain higher III-nitride base phototransistor bulk crystal quality.
Make a general survey of above-mentioned these researchs, or growth technology difficulty is large, or adopts coherence material to cause light absorption, or III-nitride base phototransistor bulk crystal quality is lower, all cannot take into account all aspects simultaneously.Therefore, be unfavorable for the lifting of III-nitride base phototransistor service behaviour.
Summary of the invention
Goal of the invention of the present invention is the technical deficiency for existing III-nitride base phototransistor, and a kind of III-nitride base phototransistor with Lattice Matching light-transmissive window layer is provided.
Further, provide a kind of III-nitride base photoelectric crystal tube preparation method with Lattice Matching light-transmissive window layer.
For achieving the above object, the technical solution used in the present invention can be divided into following two kinds:
A kind of III-nitride base phototransistor is provided, comprise substrate and growth epitaxial structure thereon, described epitaxial structure comprises donor doping layer and the contact layer of the first involuntary doped layer, donor doping layer, the second involuntary doped layer, acceptor doping layer, acceptor and alms giver's codoped layers, the 3rd involuntary doped layer, alloy compositions graded bedding, larger energy gap material from bottom to up successively.
Wherein, described substrate is silicon carbide substrates, group III nitride substrate; The 3rd involuntary doped layer is as the light absorbing zone of III-nitride base phototransistor; The donor doping layer of larger energy gap material is as light-transmissive window layer; The donor doping layer of larger energy gap material adopts identical with light absorption layer material a shaft lattice constant but energy gap is greater than III-nitride or the preparation of its multicomponent alloy material of light absorbing zone.
Preferably, described epitaxial structure also comprises resilient coating or transition zone; Resilient coating or transition zone are grown on substrate, and the first involuntary doped layer is grown on resilient coating or transition zone.While using silicon carbide substrates, group III nitride substrate etc. to do isoepitaxial growth, though need not introduce resilient coating also can, also can improve crystal mass by importing resilient coating or transition zone.
Another kind of III-nitride base phototransistor is provided, comprise substrate and growth epitaxial structure thereon, described epitaxial structure comprises donor doping layer and the contact layer of resilient coating or transition zone, the first involuntary doped layer, donor doping layer, the second involuntary doped layer, acceptor doping layer, acceptor and alms giver's codoped layers, the 3rd involuntary doped layer, alloy compositions graded bedding, larger energy gap material from bottom to up successively;
Wherein, described substrate is Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesium oxide substrate; The 3rd involuntary doped layer is as the light absorbing zone of III-nitride base phototransistor; The donor doping layer of larger energy gap material is as light-transmissive window layer; The donor doping layer of larger energy gap material adopts identical with light absorption layer material a shaft lattice constant but energy gap is greater than III-nitride or the preparation of its multicomponent alloy material of light absorbing zone.
Preferably, the III-nitride base phototransistor in described two kinds of technical schemes is n-i-p-i-n type, and donor doping layer, the second involuntary doped layer and acceptor doping layer form first pn knot of this III-nitride base phototransistor; The donor doping layer of acceptor doping layer, acceptor and alms giver's codoped layers, the 3rd involuntary doped layer, alloy compositions graded bedding and larger energy gap material forms second pn knot of this III-nitride base phototransistor.
Preferably, III-nitride base phototransistor in described two kinds of technical schemes adopts normal incidence mode, its donor doping layer is emitter, the second involuntary doped layer is time emitter, acceptor doping layer is base stage, the donor doping layer of larger energy gap material is collector electrode, and emitter is positioned at below collector electrode, and base stage is between emitter and collector electrode.
Further, provide the preparation method of the III-nitride base phototransistor in above-mentioned two kinds of technical schemes, substrate is placed in reaction chamber, on substrate, adopt epitaxial growth method to grow successively above-mentioned epitaxial structure; Described epitaxial growth method adopts metal-organic chemical vapor deposition equipment (MOCVD) method.
One of preferred version, while using silicon carbide substrates, group III nitride substrate etc. to do isoepitaxial growth, though need not introduce resilient coating also can, also can improve crystal mass by importing resilient coating or transition zone; Comprise the steps:
(1) high-temperature baking substrate: substrate is placed in to reaction chamber, and wherein, described substrate is silicon carbide substrates or group III nitride substrate; Temperature in reaction chamber is raised to 1050 ℃～1200 ℃, the pressure in reaction chamber is dropped to 50mbar～200mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, annealing 1min～15min, high-temperature baking substrate, removes Superficial Foreign Body, makes substrate surface atomic arrangement neat simultaneously;
(2) deposition the first involuntary doped layer: the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, growth the first involuntary doped layer; The first involuntary doped layer thickness is between 0.1 μ m～5 μ m, and the first involuntary doped layer adopts III-nitride or the preparation of its multicomponent alloy; The first involuntary doped layer can effectively reduce defect concentration, promotes the two-dimensional growth of material, makes material surface smooth as far as possible, is provided as the template of subsequent growth III-nitride base phototransistor epitaxial structure service;
(3) deposition donor doping layer: the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into donor dopant, growth donor doping layer; Donor doping concentration is between 1 * 10
17cm
-3～1 * 10
20cm
-3between; Donor doping layer thickness is 0.1 μ m～5 μ m; Donor doping layer adopts donor-type doping III-nitride or the preparation of its multicomponent alloy; Donor doping layer is as the emitter of III-nitride base phototransistor;
(4) deposition the second involuntary doped layer: the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, growth the second involuntary doped layer; The second involuntary doped layer thickness is 0.05 μ m～1 μ m, and the second involuntary doped layer adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; The second involuntary doped layer is as the inferior emitter of III-nitride base phototransistor;
(5) deposition acceptor doping layer: the temperature in reaction chamber is dropped to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into acceptor dopants, growth acceptor doping layer; The acceptor doping concentration of acceptor doping layer is between 1 * 10
16cm
-3～1 * 10
19cm
-3between; Acceptor doping layer thickness is 0.05 μ m～1 μ m, and acceptor doping layer adopts and prepared by principal mode doping III-nitride or its multicomponent alloy; Acceptor doping layer is as the base stage of III-nitride base phototransistor;
(6) deposition acceptor and alms giver's codoped layers: the temperature in reaction chamber is maintained to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into acceptor dopants and donor dopant, growth acceptor and alms giver's codoped layers simultaneously; The acceptor doping concentration of acceptor and alms giver's codoped layers is between 1 * 10
16cm
-3～1 * 10
19cm
-3between, the donor doping concentration of acceptor and alms giver's codoped layers is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, acceptor doping concentration is higher than donor doping concentration; Acceptor and alms giver's codoped layers thickness are 5nm～500nm, and acceptor and alms giver's codoped layers adopt acceptor and alms giver's codope III-nitride or the preparation of its multicomponent alloy; This acceptor and alms giver's codoped layers utilize the strong feature of donor doping element surface transfer ability, improve crystal mass, weaken the impact of acceptor doping layer on follow-up structure growth;
(7) interruption of growth: after acceptor and the growth of alms giver's codoped layers finish, temperature in reaction chamber is maintained to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, stop passing into three clan source 5s～1800s, during keep five family's nitrogenous sources to continue to pass into; This growth interruption process can weaken the memory effect of acceptor doping element, also can suppress the edge of climbing of epitaxial loayer dislocation simultaneously;
(8) deposition the 3rd involuntary doped layer: the temperature in reaction chamber is raised to 1000 ℃～1100 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growth regulation three; The 3rd involuntary doped layer thickness is 0.1 μ m～1 μ m, and the 3rd involuntary doped layer adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; The 3rd involuntary doped layer is as the light absorbing zone of III-nitride base phototransistor;
(9) deposit alloy content gradually variational layer: the temperature in reaction chamber is dropped to 550 ℃～950 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the alloy compositions graded bedding of the involuntary doping of growing; The component of alloy compositions graded bedding gradually changes to the alloy compositions of the donor doping layer of larger energy gap material from the alloy compositions of the 3rd involuntary doped layer; The gradual change form of the component of alloy compositions graded bedding is linear or non-linear; Alloy compositions graded bedding thickness is 5nm～100nm, and alloy compositions graded bedding adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; The introducing of this content gradually variational layer, can make the mild transition in band rank between the 3rd involuntary doped layer and the donor doping layer of larger energy gap material, is conducive to transporting of photo-generated carrier;
(10) the donor doping layer of the larger energy gap material of deposition: the temperature in reaction chamber is maintained to 550 ℃～950 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the grow donor doping layer of larger energy gap material, the donor doping concentration of the donor doping layer of larger energy gap material is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, the thickness of the donor doping layer of larger energy gap material is between 10nm～500nm;
The lattice constant of semiconductor transistor determines its energy gap.Because III-nitride can form multicomponent alloy material each other, therefore, by regulating the component ratio of multicomponent alloy material, can realize different a shaft lattice constants, thereby obtain different energy gaps.As shown in Figure 2, transverse axis is the axial lattice constant of III-nitride material a, and the longitudinal axis is the energy gap corresponding with it, by regulating the component ratio of III-nitride multicomponent alloy material, thereby change the axial lattice constant of a, obtains different energy gaps.
In Fig. 2, the region representation that three Curves enclose III-nitride or its multicomponent alloy material a direction of principal axis lattice constant that can exist, and corresponding energy gap.A vertical dotted line is done in any region in this figure, on selected dotted line, certain 1 A is the material of preparation III-nitride base phototransistor, on dotted line, put A and there is a shaft lattice constant identical with an A to the region between some B, but its energy gap is large compared with putting A.According to this feature, in vertical dotted line, put A and can there is as preparation the material of Lattice Matching light incidence window layer to any point in region between some B.
The donor doping layer of larger energy gap material adopts identical with light absorption layer material a shaft lattice constant but energy gap is greater than III-nitride or the preparation of its multicomponent alloy material of light absorbing zone; The donor doping layer of larger energy gap material, can select in vertical dotted line, to put in Fig. 2 A to any point in region between some B as its III-nitride or its multicomponent alloy material; III-nitride or its multicomponent alloy material that A point in resilient coating or transition zone, the first involuntary doped layer, donor doping layer, the second involuntary doped layer, acceptor doping layer, acceptor and alms giver's codoped layers, the selected Fig. 1 of the 3rd involuntary doped layer adopts as it;
The donor doping layer of larger energy gap material is the collector electrode of III-nitride base phototransistor, is also the light-transmissive window layer of light-transmissive signal; Why this layer of needs are selected the material of larger energy gap, are for fear of collector electrode, i.e. the donor doping layer of larger energy gap material, and the absorption to light transmission signal, makes light signal can incide light absorbing zone in the 3rd involuntary doped layer.Simultaneously, the donor doping layer of larger energy gap material has identical a shaft lattice constant with other epitaxial loayer of III-nitride base phototransistor, therefore be coherent growth during epitaxial growth, the thickness adjustable range of the donor doping layer of larger energy gap material is wide, III-nitride base phototransistor integral body has higher crystal mass; The donor doping layer of acceptor doping layer, acceptor and alms giver's codoped layers, the 3rd involuntary doped layer, alloy compositions graded bedding and larger energy gap material forms second pn knot of III-nitride base phototransistor;
(11) deposition contact layer: the temperature in reaction chamber is warming up to 900 ℃～1100 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into donor dopant, growth contact layer; Donor doping concentration is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, its donor doping concentration is higher than the donor doping concentration of the donor doping layer of donor doping layer and larger energy gap material; Contact layer thickness is 5nm～100nm, and contact layer adopts donor-type heavy doping III-nitride or the preparation of its multicomponent alloy; This contact layer is conducive to form the ohmic contact of metal electrode and semi-conducting material;
(12) use nitrogen as current-carrying gas, the greenhouse cooling in reaction chamber, to room temperature, is boosted to atmospheric pressure by the pressure in reaction chamber; Then growth there is is the substrate of epitaxial structure to take out in reaction chamber, can obtain having the III-nitride base phototransistor of Lattice Matching light-transmissive window layer.
Between above-mentioned steps (1) and (2), also can comprise the steps: to deposit resilient coating or transition zone: the temperature in reaction chamber is dropped to 450 ℃～650 ℃, and the pressure in reaction chamber is set to 25mbar～1000mbar; Grown buffer layer or transition zone under hydrogen or nitrogen atmosphere; Resilient coating or transition region thickness are between 5nm～500nm, and resilient coating or transition zone adopt III-nitride or the preparation of its multicomponent alloy.
Two of preferred version, when substrates such as using Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesium oxide substrate is done Heteroepitaxy, can adopt the technology of resilient coating or transition zone to solve the mismatch problems of III-nitride and substrate; Comprise the steps:
(1) high-temperature baking substrate: substrate is placed in to reaction chamber, and wherein, described substrate is Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesium oxide substrate; Temperature in reaction chamber is raised to 1050 ℃～1200 ℃, the pressure in reaction chamber is dropped to 50mbar～200mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, annealing 1min～15min, high-temperature baking substrate, removes Superficial Foreign Body, makes substrate surface atomic arrangement neat simultaneously;
(2) deposition resilient coating or transition zone: the temperature in reaction chamber is dropped to 450 ℃～650 ℃, and the pressure in reaction chamber is set to 25mbar～1000mbar; Grown buffer layer or transition zone under hydrogen or nitrogen atmosphere; Resilient coating or transition region thickness are between 5nm～500nm, and resilient coating or transition zone adopt III-nitride or the preparation of its multicomponent alloy;
(3) deposition the first involuntary doped layer: the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, growth the first involuntary doped layer; The first involuntary doped layer thickness is between 0.1 μ m～5 μ m, and the first involuntary doped layer adopts III-nitride or the preparation of its multicomponent alloy; The first involuntary doped layer can effectively reduce defect concentration, promotes the two-dimensional growth of material, makes material surface smooth as far as possible, is provided as the template of subsequent growth III-nitride base phototransistor epitaxial structure service;
(4) deposition donor doping layer: the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into donor dopant, growth donor doping layer; Donor doping concentration is between 1 * 10
17cm
-3～1 * 10
20cm
-3between; Donor doping layer thickness is 0.1 μ m～5 μ m; Donor doping layer adopts donor-type doping III-nitride or the preparation of its multicomponent alloy; Donor doping layer is as the emitter of III-nitride base phototransistor;
(5) deposition the second involuntary doped layer: the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, growth the second involuntary doped layer; The second involuntary doped layer thickness is 0.05 μ m～1 μ m, and the second involuntary doped layer adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; The second involuntary doped layer is as the inferior emitter of III-nitride base phototransistor;
(6) deposition acceptor doping layer: the temperature in reaction chamber is dropped to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into acceptor dopants, growth acceptor doping layer; The acceptor doping concentration of acceptor doping layer is between 1 * 10
16cm
-3～1 * 10
19cm
-3between; Acceptor doping layer thickness is 0.05 μ m～1 μ m, and acceptor doping layer adopts and prepared by principal mode doping III-nitride or its multicomponent alloy; Acceptor doping layer is as the base stage of III-nitride base phototransistor;
(7) deposition acceptor and alms giver's codoped layers: the temperature in reaction chamber is maintained to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into acceptor dopants and donor dopant, growth acceptor and alms giver's codoped layers simultaneously; The acceptor doping concentration of acceptor and alms giver's codoped layers is between 1 * 10
16cm
-3～1 * 10
19cm
-3between, the donor doping concentration of acceptor and alms giver's codoped layers is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, acceptor doping concentration is higher than donor doping concentration; Acceptor and alms giver's codoped layers thickness are 5nm～500nm, and acceptor and alms giver's codoped layers adopt acceptor and alms giver's codope III-nitride or the preparation of its multicomponent alloy; This acceptor and alms giver's codoped layers utilize the strong feature of donor doping element surface transfer ability, improve crystal mass, weaken the impact of acceptor doping layer on follow-up structure growth;
(8) interruption of growth: after acceptor and the growth of alms giver's codoped layers finish, temperature in reaction chamber is maintained to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, stop passing into three clan source 5s～1800s, during keep five family's nitrogenous sources to continue to pass into; This growth interruption process can weaken the memory effect of acceptor doping element, also can suppress the edge of climbing of epitaxial loayer dislocation simultaneously;
(9) deposition the 3rd involuntary doped layer: the temperature in reaction chamber is raised to 1000 ℃～1100 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growth regulation three; The 3rd involuntary doped layer thickness is 0.1 μ m～1 μ m, and the 3rd involuntary doped layer adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; The 3rd involuntary doped layer is as the light absorbing zone of III-nitride base phototransistor;
(10) deposit alloy content gradually variational layer: the temperature in reaction chamber is dropped to 550 ℃～950 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the alloy compositions graded bedding of the involuntary doping of growing; The component of alloy compositions graded bedding gradually changes to the alloy compositions of the donor doping layer of larger energy gap material from the alloy compositions of the 3rd involuntary doped layer; The gradual change form of the component of alloy compositions graded bedding is linear or non-linear; Alloy compositions graded bedding thickness is 5nm～200nm, and alloy compositions graded bedding adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; The introducing of this content gradually variational layer, can make the mild transition in band rank between the 3rd involuntary doped layer and the donor doping layer of larger energy gap material, is conducive to transporting of photo-generated carrier;
(11) the donor doping layer of the larger energy gap material of deposition: the temperature in reaction chamber is maintained to 550 ℃～950 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the grow donor doping layer of larger energy gap material, the donor doping concentration of the donor doping layer of larger energy gap material is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, the thickness of the donor doping layer of larger energy gap material is between 10nm～500nm;
The lattice constant of semiconductor transistor determines its energy gap.Because III-nitride can form multicomponent alloy material each other, therefore, by regulating the component ratio of multicomponent alloy material, can realize different a shaft lattice constants, thereby obtain different energy gaps.As shown in Figure 2, transverse axis is the axial lattice constant of III-nitride material a, and the longitudinal axis is the energy gap corresponding with it, by regulating the component ratio of III-nitride multicomponent alloy material, thereby change the axial lattice constant of a, obtains different energy gaps.
In Fig. 2, the region representation that three Curves enclose III-nitride or its multicomponent alloy material a direction of principal axis lattice constant that can exist, and corresponding energy gap.A vertical dotted line is done in any region in this figure, on selected dotted line, certain 1 A is the material of preparation III-nitride base phototransistor, on dotted line, put A and there is a shaft lattice constant identical with an A to the region between some B, but its energy gap is large compared with putting A.According to this feature, in vertical dotted line, put A and can there is as preparation the material of Lattice Matching light incidence window layer to any point in region between some B.
The donor doping layer of larger energy gap material adopts identical with light absorption layer material a shaft lattice constant but energy gap is greater than III-nitride or the preparation of its multicomponent alloy material of light absorbing zone; The donor doping layer of larger energy gap material, can select in vertical dotted line, to put in Fig. 2 A to any point in region between some B as its III-nitride or its multicomponent alloy material; III-nitride or its multicomponent alloy material that A point in resilient coating or transition zone, the first involuntary doped layer, donor doping layer, the second involuntary doped layer, acceptor doping layer, acceptor and alms giver's codoped layers, the selected Fig. 1 of the 3rd involuntary doped layer adopts as it;
The donor doping layer of larger energy gap material is the collector electrode of III-nitride base phototransistor, is also the light-transmissive window layer of light-transmissive signal; Why this layer of needs are selected the material of larger energy gap, are for fear of collector electrode, i.e. the donor doping layer of larger energy gap material, and the absorption to light transmission signal, makes light signal can incide light absorbing zone in the 3rd involuntary doped layer.Simultaneously, the donor doping layer of larger energy gap material has identical a shaft lattice constant with other epitaxial loayer of III-nitride base phototransistor, therefore be coherent growth during epitaxial growth, the thickness adjustable range of the donor doping layer of larger energy gap material is wide, III-nitride base phototransistor integral body has higher crystal mass; The donor doping layer of acceptor doping layer, acceptor and alms giver's codoped layers, the 3rd involuntary doped layer, alloy compositions graded bedding and larger energy gap material forms second pn knot of III-nitride base phototransistor;
(12) deposition contact layer: the temperature in reaction chamber is warming up to 900 ℃～1100 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into donor dopant, growth contact layer; Donor doping concentration is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, its donor doping concentration is higher than the donor doping concentration of the donor doping layer of donor doping layer and larger energy gap material; Contact layer thickness is 5nm～100nm, and contact layer adopts donor-type heavy doping III-nitride or the preparation of its multicomponent alloy; This contact layer is conducive to form the ohmic contact of metal electrode and semi-conducting material;
(13) use nitrogen as current-carrying gas, the greenhouse cooling in reaction chamber, to room temperature, is boosted to atmospheric pressure by the pressure in reaction chamber; Then growth there is is the substrate of epitaxial structure to take out in reaction chamber, can obtain having the III-nitride base phototransistor of Lattice Matching light-transmissive window layer.
In addition, in order to guarantee the better enforcement of above-mentioned two kinds of technical schemes, when deposition resilient coating or transition zone, the pressure in reaction chamber is set to 350mbar～750mbar;
When deposition the first involuntary doped layer, the pressure in reaction chamber is set to 100mbar～600mbar;
When deposition donor doping layer, the pressure in reaction chamber is set to 100mbar～600mbar;
When deposition the second involuntary doped layer, the pressure in reaction chamber is set to 100mbar～600mbar;
When deposition acceptor doping layer, the pressure in reaction chamber is set to 50mbar～500mbar;
When deposition acceptor and alms giver's codoped layers, the pressure in reaction chamber is set to 50mbar～500mbar;
When deposition the 3rd involuntary doped layer, the pressure in reaction chamber is set to 100mbar～600mbar;
When deposit alloy content gradually variational layer, the pressure in reaction chamber is set to 25mbar～400mbar;
When the donor doping layer of the larger energy gap material of deposition, the pressure in reaction chamber is set to 25mbar～400mbar; And this layer adopts Pulsed growth method, comprises following three steps: 1. in reaction chamber, pass into three clan source 1s～8s; 2. disconnect three clan source 1s～8s, and pass into donor dopant; 3. circulate above two some cycles of step, until reach desired growth thickness; In whole process, keep five family's nitrogenous sources to continue to pass into simultaneously;
When deposition contact layer, the pressure in reaction chamber is set to 100mbar～400mbar.
The present invention is with respect to prior art, there is following beneficial effect: the III-nitride base phototransistor with Lattice Matching incident light Window layer of the present invention is by the III-nitride at light absorbing zone or its multicomponent alloy material, grow and there is identical a shaft lattice constant with it but the larger material of energy gap, thereby prepare the light-transmissive window layer of this phototransistor, and realize good device bulk crystal quality.Meanwhile, use content gradually variational layer as transition zone, make to be with the mild transition in rank, strengthen transporting of photo-generated carrier, improve the service behaviour of III-nitride base phototransistor.
In sum, adopt this III-nitride base phototransistor with Lattice Matching light-transmissive window layer, guarantee the light transmissive difficult problem that is difficult to realize better crystal mass on III-nitride base phototransistor that simultaneously solved.
Accompanying drawing explanation
Fig. 1 is the structural representation of III-nitride base phototransistor of the present invention;
Fig. 2 is the schematic diagram that is related to of a shaft lattice constant of the present invention and energy gap;
Fig. 3 is the structural representation of the III-nitride base phototransistor in embodiment 1;
Fig. 4 is the schematic diagram that is related to of a shaft lattice constant of embodiment 1 and energy gap;
Fig. 5 is the structural representation of the III-nitride base phototransistor in embodiment 2.
Embodiment
Below in conjunction with the drawings and specific embodiments, goal of the invention of the present invention is described in further detail, embodiment can not repeat one by one at this, but therefore embodiments of the present invention are not defined in following examples.Unless stated otherwise, the present invention adopts material and processing method are the art conventional material and processing method.
embodiment 1
The implementation case will illustrate the III-nitride base photoelectric crystal tubular construction shown in Fig. 2, and this photoelectric crystal tubular construction is n-i-p-i-n type, adopts the form of normal incidence.
As shown in Figure 3, adopt the epitaxial growth method growth III-nitride base phototransistor of metal-organic chemical vapor deposition equipment (MOCVD), comprise c surface sapphire substrate 301 and epitaxial structure 302～311, described epitaxial structure comprises the resilient coating 302 being grown in c surface sapphire substrate 301, be grown in the involuntary Doped GaN layer 303 on resilient coating 302, be grown in the alms giver Si Doped GaN layer 304 on involuntary doped layer GaN layer 303, be grown in the involuntary Doped GaN layer 305 on alms giver Si Doped GaN layer 304, be grown in the acceptor Mg Doped GaN layer 306 on involuntary Doped GaN layer 305, be grown in acceptor Mg and alms giver Si codope GaN layer 307 on acceptor Mg Doped GaN layer 306, be grown in the involuntary Doped GaN layer 308 on acceptor Mg and alms giver Si codope GaN layer 307, be grown in Al and In and Ga content gradually variational AlInGaN layer 309 on involuntary Doped GaN layer 308, be grown in the alms giver Si doped with Al InN layer 310 on Al and In and Ga content gradually variational AlInGaN layer 309, and be grown in the alms giver Si heavy doping GaN layer 311 on alms giver Si doped with Al InN layer 310.
The preparation method of this III-nitride base phototransistor, has following 13 steps successively:
(1) high-temperature baking Sapphire Substrate 301: Sapphire Substrate 301 is placed in reaction chamber; Reaction cavity temperature rises to 1090 ℃, and reaction chamber internal pressure is down to 100mbar, uses hydrogen as current-carrying gas, anneals 5 minutes, and high-temperature baking substrate, removes Superficial Foreign Body, makes substrate surface atomic arrangement neat simultaneously.
(2) deposition resilient coating 302: reaction chamber is cooled to 530 ℃, boosts to 650mbar, and current-carrying gas is used hydrogen, grown buffer layer 302.Resilient coating 302 thickness are 25 nm, adopt involuntary Doped GaN material preparation.
(3) deposit involuntary Doped GaN layer 303: reaction cavity temperature rises to 1060 ℃, and reaction chamber internal pressure is down to 250mbar, use hydrogen as current-carrying gas, the involuntary Doped GaN layer 303 of growing.Involuntary Doped GaN layer 303 thickness are 2.5 μ m, and involuntary Doped GaN layer 303 adopts involuntary Doped GaN material preparation.Grown buffer layer 302 and involuntary Doped GaN layer 303 in Sapphire Substrate 301, as the template of subsequent growth III-nitride base phototransistor epitaxial structure.
(4) deposition alms giver Si Doped GaN layer 304: reaction cavity temperature maintains 1060 ℃, and reaction chamber internal pressure is maintained 250mbar, uses hydrogen as current-carrying gas, passes into donor dopant SiH in reaction chamber
4, growth alms giver Si Doped GaN layer 304, donor doping concentration is 3 * 10
18cm
-3.Alms giver Si Doped GaN layer 304 emitter as III-nitride base phototransistor, alms giver Si Doped GaN layer 304 thickness are 1 μ m, alms giver Si Doped GaN layer 304 adopts the preparation of Si Doped GaN material.
(5) deposit involuntary Doped GaN layer 305: reaction cavity temperature maintains 1060 ℃, and reaction chamber internal pressure is maintained 250mbar, use hydrogen as current-carrying gas, the involuntary Doped GaN layer 305 of growing.Involuntary Doped GaN layer 305 thickness are 100nm, and involuntary Doped GaN is as the inferior emitter of III-nitride base phototransistor.
(6) deposition acceptor Mg Doped GaN layer 306: reaction cavity temperature is down to 920 ℃, and reaction chamber internal pressure is down to 100mbar, uses hydrogen as current-carrying gas, passes into acceptor dopants Cp in reaction chamber
2mg, growth acceptor Mg Doped GaN layer 306, acceptor doping concentration is 6 * 10
17cm
-3.Acceptor Mg Doped GaN layer 306 base stage as III-nitride base phototransistor, acceptor Mg Doped GaN layer 306 thickness are 100nm, acceptor Mg Doped GaN layer 306 adopts the preparation of Mg Doped GaN material.Alms giver Si Doped GaN layer 304, involuntary Doped GaN layer 305 and acceptor Mg Doped GaN layer 306 form first pn knot of III-nitride base phototransistor.
(7) deposition acceptor Mg and alms giver Si codope GaN layer 307: react cavity temperature and maintain 920 ℃, reaction chamber internal pressure is maintained 100mbar, used hydrogen as current-carrying gas, in reaction chamber, passes into acceptor dopants Cp simultaneously
2mg and donor dopant SiH
4, growth acceptor Mg and alms giver Si codope GaN layer 307, acceptor doping concentration is 4 * 10
17cm
-3, donor doping concentration is 2 * 10
17cm
-3.Acceptor Mg and alms giver Si codope GaN layer 307 thickness are 100nm, acceptor Mg and alms giver Si codope GaN layer 307 adopt Mg and the preparation of Si codope GaN material, it utilizes the strong feature of alms giver Si doped chemical surface migration ability, improve crystal mass, weaken the impact of acceptor Mg doped layer 306 on follow-up structure growth.
(8) interruption of growth: after acceptor Mg and 307 growth of alms giver Si codope GaN layer finish, reaction cavity temperature maintains 920 ℃, and reaction chamber internal pressure is maintained 100mbar, uses hydrogen as current-carrying gas, stop passing into three races's gallium source 900s, during keep five family's nitrogenous sources to continue to pass into.This growth interruption process can weaken the memory effect of acceptor Mg doped chemical, also can suppress the edge of climbing of epitaxial loayer dislocation simultaneously.
(9) deposit involuntary Doped GaN layer 308: reaction cavity temperature rises to 1060 ℃, and reaction chamber internal pressure rises to 250mbar, use hydrogen as current-carrying gas, the involuntary Doped GaN layer 308 of growing.Involuntary Doped GaN layer 308 is the involuntary Doped GaN that 100nm is thick, as the light absorbing zone of III-nitride base phototransistor.
(10) depositing Al and In and Ga content gradually variational AlInGaN layer 309: react cavity temperature and be down to 825 ℃, reaction chamber internal pressure is down to 60mbar, use nitrogen as current-carrying gas, growth Al and In and Ga content gradually variational AlInGaN layer 309, Al component and In component are increased to the component of Fig. 4 mid point D from 0% linearity starting, and (Al component is approximately 84%, In component is approximately 16%), Ga component linearity is reduced to 0%.Al and In and Ga content gradually variational AlInGaN layer 309 thickness are 30nm, and Al and In and Ga content gradually variational AlInGaN layer 309 adopt involuntary doped with Al InGaN material preparation.The introducing of this alloy compositions graded bedding, can make the mild transition in band rank between involuntary Doped GaN layer 308 and alms giver Si doped with Al InN layer 310, is conducive to transporting of photo-generated carrier.
(11) deposition alms giver Si doped with Al InN layer 310: reaction cavity temperature maintains 825 ℃, and reaction chamber internal pressure is down to 60mbar, uses nitrogen as current-carrying gas, growth alms giver Si doped with Al InN layer 310, and donor doping concentration is 1 * 10
18cm
-3, thickness is 150nm.
This layer adopts Pulsed growth method, comprises following three steps: 1. pass into the Al of three races and In source 2s; 2. disconnect the Al of three races and In source 1s, and pass into donor dopant SiH
4; 3. in above two steps 675 cycle of circulation, in whole process, keep five family's nitrogenous sources to continue to pass into simultaneously.Alms giver Si doped with Al InN layer 310 is that Al and In component are the Si doped with Al InN of the component that in Fig. 4, D is ordered (Al component is approximately 84%, and In component is approximately 16%).
Alms giver Si doped with Al InN layer 310 is the collector electrode of III-nitride base phototransistor, is also light-transmissive window layer.Alms giver Si doped with Al InN layer 310 has than the wider band gap of involuntary Doped GaN layer 308, can avoid it to needing the light absorption of detecting band, is conducive to the collection of 308 pairs of light of involuntary Doped GaN layer.Simultaneously, alms giver Si doped with Al InN layer 310 has identical a shaft lattice constant with other epitaxial loayer of III-nitride base phototransistor, therefore be coherent growth during epitaxial growth, the thickness adjustable range of alms giver Si doped with Al InN layer 310 is wide, III-nitride base phototransistor integral body has higher crystal mass.Acceptor Mg Doped GaN layer 306, acceptor Mg and alms giver Si codope GaN layer 307, involuntary Doped GaN layer 308, Al component and In content gradually variational AlInN layer 309 and alms giver Si doped with Al InN layer 310 form second pn knot of III-nitride base phototransistor.
(12) deposition alms giver Si heavy doping GaN layer 311: reaction cavity temperature rises to 950 ℃, boosts to 250mbar, uses hydrogen as current-carrying gas, in reaction chamber, passes into donor dopant SiH
4, growth alms giver Si heavy doping GaN layer 311, donor doping concentration is 5 * 10
18cm
-3.Alms giver Si heavy doping GaN layer 311 thickness are 30nm, and alms giver Si heavy doping GaN layer 311 adopts the preparation of Si Doped GaN material, and it is conducive to form the ohmic contact of metal electrode and semi-conducting material as a kind of contact layer.
(13) current-carrying gas is used nitrogen, reaction cavity temperature is down to room temperature, reaction chamber internal pressure boosts to atmospheric pressure, growth is had the Sapphire Substrate of epitaxial structure take out in reaction chamber, can obtain having the III-nitride base phototransistor of Lattice Matching light-transmissive window layer.
embodiment 2
The present embodiment is except following characteristics, and other are all identical with embodiment 1: in the present embodiment, substrate 301 is GaN substrate; Do not deposit resilient coating 302; On GaN substrate 301, grow successively involuntary Doped GaN layer 303, alms giver Si Doped GaN layer 304, involuntary Doped GaN layer 305, acceptor Mg Doped GaN layer 306, acceptor Mg and alms giver Si codope GaN layer 307, involuntary Doped GaN layer 308, Al and In and Ga content gradually variational AlInGaN layer 309, alms giver Si doped with Al InN layer 310 and alms giver Si heavy doping GaN layer 311.This structure as shown in Figure 5.
embodiment 3
The present embodiment is except following characteristics, and other are all identical with embodiment 1: in the present embodiment, when deposition resilient coating 302, the pressure in reaction chamber is set to 750mbar; When the involuntary Doped GaN layer 303 of deposition, the pressure in reaction chamber is set to 600mbar; When deposition alms giver Si Doped GaN layer 304, the pressure in reaction chamber is set to 600mbar; When the involuntary Doped GaN layer 305 of deposition, the pressure in reaction chamber is set to 600mbar; When deposition acceptor Mg Doped GaN layer 306, the pressure in reaction chamber is set to 500mbar; When deposition acceptor Mg and alms giver Si codope GaN layer 307, the pressure in reaction chamber is set to 500mbar; When the involuntary Doped GaN layer 308 of deposition, the pressure in reaction chamber is set to 600mbar; When depositing Al and In and Ga content gradually variational AlInGaN layer 309, the pressure in reaction chamber is set to 60mbar; When deposition alms giver Si doped with Al InN layer 310, the pressure in reaction chamber is set to 60mbar; When deposition alms giver Si heavy doping GaN layer 311, the pressure in reaction chamber is set to 400mbar.
Especially, in this enforcement, adopt growth at atmosphere, can make growth rate increase, save growth time, raise the efficiency.Meanwhile, growth at atmosphere can improve III-nitride material crystalline quality, thereby promotes the service behaviour of the III-nitride base photoelectric crystal tube device with Lattice Matching light-transmissive window layer.
Above-described embodiment is only preferred embodiment of the present invention, is not used for limiting practical range of the present invention.Be that all equalizations of doing according to content of the present invention change and modify, all by the claims in the present invention scope required for protection, contained.
Claims (4)
1. a preparation method for III-nitride base phototransistor, is characterized in that: substrate (101) is placed in reaction chamber, adopts epitaxial growth method to grow successively epitaxial structure on substrate; Described epitaxial growth method adopts metal-organic chemical vapor deposition equipment method;
(1) high-temperature baking substrate (101): substrate (101) is placed in to reaction chamber, and wherein, described substrate is silicon carbide substrates, group III nitride substrate; Temperature in reaction chamber is raised to 1050 ℃～1200 ℃, the pressure in reaction chamber is dropped to 50mbar～200mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, annealing 1min～15min;
(2) deposition the first involuntary doped layer (103): the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, growth the first involuntary doped layer (103); The first involuntary doped layer (103) thickness is between 0.1 μ m～5 μ m, and the first involuntary doped layer (103) adopts III-nitride or the preparation of its multicomponent alloy;
(3) deposition donor doping layer (104): the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into donor dopant, growth donor doping layer (104); Donor doping concentration is between 1 * 10
17cm
-3～1 * 10
20cm
-3between; Donor doping layer (104) thickness is 0.1 μ m～5 μ m; Donor doping layer (104) adopts donor-type doping III-nitride or the preparation of its multicomponent alloy;
(4) deposition the second involuntary doped layer (105): the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, growth the second involuntary doped layer (105); The second involuntary doped layer (105) thickness is 0.05 μ m～1 μ m, and the second involuntary doped layer (105) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(5) deposition acceptor doping layer (106): the temperature in reaction chamber is dropped to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into acceptor dopants, growth acceptor doping layer (106); The acceptor doping concentration of acceptor doping layer (106) is between 1 * 10
16cm
-3～1 * 10
19cm
-3between; Acceptor doping layer (106) thickness is 0.05 μ m～1 μ m, and acceptor doping layer (106) adopts and prepared by principal mode doping III-nitride or its multicomponent alloy;
(6) deposition acceptor and alms giver's codoped layers (107): the temperature in reaction chamber is maintained to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into acceptor dopants and donor dopant, growth acceptor and alms giver's codoped layers (107) simultaneously; The acceptor doping concentration of acceptor and alms giver's codoped layers is between 1 * 10
16cm
-3～1 * 10
19cm
-3between, the donor doping concentration of acceptor and alms giver's codoped layers is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, acceptor doping concentration is higher than donor doping concentration; Acceptor and alms giver's codoped layers (107) thickness are 5nm～500nm, and acceptor and alms giver's codoped layers (107) adopt acceptor and alms giver's codope III-nitride or the preparation of its multicomponent alloy;
(7) interruption of growth: after acceptor and alms giver's codoped layers (107) growth finish, temperature in reaction chamber is maintained to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, stop passing into three clan source 5s～1800s, during keep five family's nitrogenous sources to continue to pass into;
(8) deposition the 3rd involuntary doped layer (108): the temperature in reaction chamber is raised to 1000 ℃～1100 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growth regulation three (108); The 3rd involuntary doped layer (108) thickness is 0.1 μ m～1 μ m, and the 3rd involuntary doped layer (108) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(9) deposit alloy content gradually variational layer (109): the temperature in reaction chamber is dropped to 550 ℃～950 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the alloy compositions graded bedding (109) of the involuntary doping of growing; The component of alloy compositions graded bedding (109) gradually changes to the alloy compositions of the donor doping layer (110) of larger energy gap material from the alloy compositions of the 3rd involuntary doped layer (108); The gradual change form of the component of alloy compositions graded bedding (109) is linear or non-linear; Alloy compositions graded bedding (109) thickness is 5nm～200nm, and alloy compositions graded bedding (109) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(10) the donor doping layer (110) of the larger energy gap material of deposition: the temperature in reaction chamber is maintained to 550 ℃～950 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the grow donor doping layer (110) of larger energy gap material, the donor doping concentration of the donor doping layer (110) of larger energy gap material is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, the thickness of the donor doping layer (110) of larger energy gap material is between 10nm～500nm;
The donor doping layer (110) of larger energy gap material adopts identical with light absorption layer material a shaft lattice constant but energy gap is greater than III-nitride or the preparation of its multicomponent alloy material of light absorbing zone;
(11) deposition contact layer (111): the temperature in reaction chamber is warming up to 900 ℃～1100 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into donor dopant, growth contact layer (111); Donor doping concentration is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, its donor doping concentration is higher than the donor doping concentration of the donor doping layer (110) of donor doping layer (104) and larger energy gap material; Contact layer (111) thickness is 5nm～100nm, and contact layer (111) adopts donor-type heavy doping III-nitride or the preparation of its multicomponent alloy;
(12) use nitrogen as current-carrying gas, the greenhouse cooling in reaction chamber, to room temperature, is boosted to atmospheric pressure by the pressure in reaction chamber; Then growth there is is the substrate of epitaxial structure to take out in reaction chamber, can obtain having the III-nitride base phototransistor of Lattice Matching light-transmissive window layer.
2. the preparation method of III-nitride base phototransistor according to claim 1, it is characterized in that: between above-mentioned steps (1) and (2), also comprise the steps: to deposit resilient coating or transition zone (102): the temperature in reaction chamber is dropped to 450 ℃～650 ℃, and the pressure in reaction chamber is set to 25mbar～1000mbar; Grown buffer layer or transition zone (102) under hydrogen or nitrogen atmosphere; Resilient coating or transition zone (102) thickness is between 5nm～500nm, and resilient coating or transition zone (102) adopt III-nitride or the preparation of its multicomponent alloy.
3. a preparation method for III-nitride base phototransistor, is characterized in that: substrate (101) is placed in reaction chamber, adopts epitaxial growth method to grow successively epitaxial structure on substrate; Described epitaxial growth method adopts metal-organic chemical vapor deposition equipment method;
(1) high-temperature baking substrate (101): substrate (101) is placed in to reaction chamber, and wherein, described substrate is Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesium oxide substrate; Temperature in reaction chamber is raised to 1050 ℃～1200 ℃, the pressure in reaction chamber is dropped to 50mbar～200mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, annealing 1min～15min;
(2) deposition resilient coating or transition zone (102): the temperature in reaction chamber is dropped to 450 ℃～650 ℃, and the pressure in reaction chamber is set to 25mbar～1000mbar; Grown buffer layer or transition zone (102) under hydrogen or nitrogen atmosphere; Resilient coating or transition zone (102) thickness is between 5nm～500nm, and resilient coating or transition zone (102) adopt III-nitride or the preparation of its multicomponent alloy;
(3) deposition the first involuntary doped layer (103): the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, growth the first involuntary doped layer (103); The first involuntary doped layer (103) thickness is between 0.1 μ m～5 μ m, and the first involuntary doped layer (103) adopts III-nitride or the preparation of its multicomponent alloy;
(4) deposition donor doping layer (104): the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into donor dopant, growth donor doping layer (104); Donor doping concentration is between 1 * 10
17cm
-3～1 * 10
20cm
-3between; Donor doping layer (104) thickness is 0.1 μ m～5 μ m; Donor doping layer (104) adopts donor-type doping III-nitride or the preparation of its multicomponent alloy;
(5) deposition the second involuntary doped layer (105): the temperature in reaction chamber is maintained to 1000 ℃～1200 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, growth the second involuntary doped layer (105); The second involuntary doped layer (105) thickness is 0.05 μ m～1 μ m, and the second involuntary doped layer (105) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(6) deposition acceptor doping layer (106): the temperature in reaction chamber is dropped to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into acceptor dopants, growth acceptor doping layer (106); The acceptor doping concentration of acceptor doping layer (106) is between 1 * 10
16cm
-3～1 * 10
19cm
-3between; Acceptor doping layer (106) thickness is 0.05 μ m～1 μ m, and acceptor doping layer (106) adopts and prepared by principal mode doping III-nitride or its multicomponent alloy;
(7) deposition acceptor and alms giver's codoped layers (107): the temperature in reaction chamber is maintained to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into acceptor dopants and donor dopant, growth acceptor and alms giver's codoped layers (107) simultaneously; The acceptor doping concentration of acceptor and alms giver's codoped layers is between 1 * 10
16cm
-3～1 * 10
19cm
-3between, the donor doping concentration of acceptor and alms giver's codoped layers is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, acceptor doping concentration is higher than donor doping concentration; Acceptor and alms giver's codoped layers (107) thickness are 5nm～500nm, and acceptor and alms giver's codoped layers (107) adopt acceptor and alms giver's codope III-nitride or the preparation of its multicomponent alloy;
(8) interruption of growth: after acceptor and alms giver's codoped layers (107) growth finish, temperature in reaction chamber is maintained to 850 ℃～1150 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, stop passing into three clan source 5s～1800s, during keep five family's nitrogenous sources to continue to pass into;
(9) deposition the 3rd involuntary doped layer (108): the temperature in reaction chamber is raised to 1000 ℃～1100 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growth regulation three (108); The 3rd involuntary doped layer (108) thickness is 0.1 μ m～1 μ m, and the 3rd involuntary doped layer (108) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(10) deposit alloy content gradually variational layer (109): the temperature in reaction chamber is dropped to 550 ℃～950 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the alloy compositions graded bedding (109) of the involuntary doping of growing; The component of alloy compositions graded bedding (109) gradually changes to the alloy compositions of the donor doping layer (110) of larger energy gap material from the alloy compositions of the 3rd involuntary doped layer (108); The gradual change form of the component of alloy compositions graded bedding (109) is linear or non-linear; Alloy compositions graded bedding (109) thickness is 5nm～200nm, and alloy compositions graded bedding (109) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(11) the donor doping layer (110) of the larger energy gap material of deposition: the temperature in reaction chamber is maintained to 550 ℃～950 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the grow donor doping layer (110) of larger energy gap material, the donor doping concentration of the donor doping layer (110) of larger energy gap material is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, the thickness of the donor doping layer (110) of larger energy gap material is between 10nm～500nm;
The donor doping layer (110) of larger energy gap material adopts identical with light absorption layer material a shaft lattice constant but energy gap is greater than III-nitride or the preparation of its multicomponent alloy material of light absorbing zone;
(12) deposition contact layer (111): the temperature in reaction chamber is warming up to 900 ℃～1100 ℃, pressure in reaction chamber is set to 25mbar～1000mbar, use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, pass into donor dopant, growth contact layer (111); Donor doping concentration is between 1 * 10
17cm
-3～1 * 10
20cm
-3between, its donor doping concentration is higher than the donor doping concentration of the donor doping layer (110) of donor doping layer (104) and larger energy gap material; Contact layer (111) thickness is 5nm～100nm, and contact layer (111) adopts donor-type heavy doping III-nitride or the preparation of its multicomponent alloy;
(13) use nitrogen as current-carrying gas, the greenhouse cooling in reaction chamber, to room temperature, is boosted to atmospheric pressure by the pressure in reaction chamber; Then growth there is is the substrate of epitaxial structure to take out in reaction chamber, can obtain having the III-nitride base phototransistor of Lattice Matching light-transmissive window layer.
4. according to the preparation method of the III-nitride base phototransistor described in claim 1-3 any one, it is characterized in that:
When deposition resilient coating or transition zone (102), the pressure in reaction chamber arranges 350mbar～750mbar;
When deposition the first involuntary doped layer (103), the pressure in reaction chamber is set to 100mbar～600mbar;
When deposition donor doping layer (104), the pressure in reaction chamber is set to 100mbar～600mbar;
When deposition the second involuntary doped layer (105), the pressure in reaction chamber is set to 100mbar～600mbar;
When deposition acceptor doping layer (106), the pressure in reaction chamber is set to 50mbar～500mbar;
When deposition acceptor and alms giver's codoped layers (107), the pressure in reaction chamber is set to 50mbar～500mbar;
When deposition the 3rd involuntary doped layer (108), the pressure in reaction chamber is set to 100mbar～600mbar;
When deposit alloy content gradually variational layer (109), the pressure in reaction chamber is set to 25mbar～400mbar;
When the donor doping layer (110) of the larger energy gap material of deposition, the pressure in reaction chamber is set to 25mbar～400mbar; And this layer adopts Pulsed growth method, comprises following three steps: 1. in reaction chamber, pass into three clan source 1s～8s; 2. disconnect three clan source 1s～8s, and pass into donor dopant; 3. circulate above two some cycles of step, until reach desired growth thickness; In whole process, keep five family's nitrogenous sources to continue to pass into simultaneously;
When deposition contact layer (111), the pressure in reaction chamber is set to 100mbar～400mbar.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210314694.7A CN102820369B (en) | 2012-08-30 | 2012-08-30 | Three-family nitride-based phototransistor and manufacturing method thereof |
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| CN101661878A (en) * | 2009-09-08 | 2010-03-03 | 中山大学 | Method of double-element delta doped growth P-type GaN base material |
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