CN102820369A - Three-family nitride-based phototransistor and manufacturing method thereof - Google Patents
Three-family nitride-based phototransistor and manufacturing method thereof Download PDFInfo
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- CN102820369A CN102820369A CN2012103146947A CN201210314694A CN102820369A CN 102820369 A CN102820369 A CN 102820369A CN 2012103146947 A CN2012103146947 A CN 2012103146947A CN 201210314694 A CN201210314694 A CN 201210314694A CN 102820369 A CN102820369 A CN 102820369A
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- 238000004519 manufacturing process Methods 0.000 title abstract 3
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- 230000007704 transition Effects 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims description 192
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- 239000007789 gas Substances 0.000 claims description 106
- 229910052757 nitrogen Inorganic materials 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 84
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- 238000000151 deposition Methods 0.000 claims description 60
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- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 5
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Abstract
The invention discloses a three-family nitride-based phototransistor with a lattice matching light transmission widow and a manufacturing method thereof. According to the three-family nitride-based phototransistor provided by the invention, a three-family nitride or another multi-element alloy material which is identical to the material of a light absorbing layer in an a-axis lattice constant but larger than the material of the light absorbing layer in forbidden bandwidth is used as a light transmission widow layer, so that the crystal quality of the window layer and an epitaxial layer on the window layer can be improved, and defects of the window layer and the epitaxial layer on the window layer can be restrained. Therefore, the working property of the three-family nitride-based phototransistor can be improved. Three-family element component gradient layer is used as a transition layer, so that the band step is in smooth transition; and the photo-production carrier collection efficiency can be improved. Therefore, the three-family nitride-based phototransistor with the good properties can be prepared.
Description
Technical field
The present invention relates to use the technical field of III-nitride or its multicomponent alloy material preparation III-nitride base photo transistor detector part, relate in particular to and use III-nitride or its multicomponent alloy material preparation to have III-nitride base phototransistor of lattice match light-transmissive window layer and preparation method thereof.
Background technology
Recently between decades; The group iii nitride semiconductor material has been obtained development at full speed on technical fields such as epitaxial growth; Make it can prepare a series of well behaved photodetection III-nitride base phototransistors, like III-nitride photoconductive detector, Schottky photo diode, PIN photodiode, avalanche photodide and phototransistor etc.In the photodetection III-nitride base phototransistor of these types; Then because it can be in the gain higher than the following acquisition of low-work voltage, while III-nitride base phototransistor has higher relatively functional reliability and has received concern III-nitride base photo transistor detector.Just because of these advantages, attracted the attention of numerous researchers and manufacturer.Yet, nonetheless, still have many problems to need to be resolved hurrily.
Look back present research for III-nitride base photo transistor detector; People such as Wei Yang like U.S. APA company; In its article High gain GaN/AlGaN heterojunction phototransistor (in August, 1998 Applied Physics Letters, Vol. 73, No. 7); Though successfully develop the back incident-type GaN base ultraviolet light electric transistor detector with high-gain, it is the III-nitride base photoelectric crystal tubular construction of back of the body incident.Adopt the mode of back of the body incident need face two hang-ups: the first, search out the transparent substrate of transmittance wave band; The second, on transparent substrates, grow the bigger III-nitride of broad stopband width or its multicomponent alloy material earlier as Window layer.This epitaxial growth method requires high to growing technology, be difficult to obtain crystal mass preferably simultaneously.
People such as the Robert Mouillet of Osaka, Japan gas companies are at its article Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer (calendar year 2001 Jpn. J. Appl. Phys; Vol. 40; Pp. L498-L501); Though adopted the mode of normal incidence; But because the transmittance side adopts is that the n type GaN material of 0.6 μ m is made collector layer and the light-transmissive window layer is not set, so efficiency of light absorption is lower, influences the detectivity of III-nitride base phototransistor.
2008, people such as M. L. Lee were at its article Ultraviolet bandpass Al
0.17Ga
0.83N/GaN heterojunction phototransitors with high optical gain and high rejection ratio (Applied Physics Letters in 2008; Vol. 92; 053506) in, though the AlGaN material that is provided with the broad energy gap as the light-transmissive window layer, has been avoided the absorption of material to light; But this structure is a growth AlGaN light-transmissive window layer on the GaN structure; A shaft lattice constant difference between two kinds of materials is big, is not the extension pattern of coherence growth, therefore is difficult to obtain higher III-nitride base phototransistor bulk crystal quality.
Make a general survey of above-mentioned these researchs, or the growth technology difficulty is big, or adopts the coherence material to cause light absorption, or III-nitride base phototransistor bulk crystal quality is lower, all can't take into account all aspects simultaneously.Therefore, be unfavorable for the lifting of III-nitride base phototransistor service behaviour.
Summary of the invention
Goal of the invention of the present invention is to the technical deficiency of existing III-nitride base phototransistor, and a kind of III-nitride base phototransistor with lattice match light-transmissive window layer is provided.
Further, a kind of III-nitride base photoelectric crystal tube preparation method with lattice match light-transmissive window layer is provided.
For realizing the foregoing invention purpose, the technical scheme that the present invention adopts can be divided into following two kinds:
A kind of III-nitride base phototransistor is provided; Comprise substrate and growth epitaxial structure above that, said epitaxial structure comprises involuntary doped layer, donor doping layer, involuntary doped layer, acceptor doping layer from bottom to up successively, receives donor doping layer and contact layer main and alms giver's codoped layers, involuntary doped layer, alloy compositions graded bedding, big energy gap material.
Wherein, said substrate is silicon carbide substrates, III-nitride substrate; Involuntary doped layer is as the light absorbing zone of III-nitride base phototransistor; The donor doping layer of big energy gap material is as the light-transmissive window layer; The donor doping layer of big energy gap material adopts but energy gap identical with light absorption layer material a shaft lattice constant III-nitride or its multicomponent alloy material preparation greater than light absorbing zone.
Preferably, said epitaxial structure also comprises resilient coating or transition zone; Resilient coating or transition zone are grown on the substrate, and involuntary doped layer is grown on resilient coating or the transition zone.When using silicon carbide substrates, III-nitride substrate etc. to do isoepitaxial growth, though need not introduce resilient coating also can, also can improve crystal mass through importing resilient coating or transition zone.
Another kind of III-nitride base phototransistor is provided; Comprise substrate and growth epitaxial structure above that, said epitaxial structure comprises resilient coating or transition zone, involuntary doped layer, donor doping layer, involuntary doped layer, acceptor doping layer from bottom to up successively, receives donor doping layer and contact layer main and alms giver's codoped layers, involuntary doped layer, alloy compositions graded bedding, big energy gap material;
Wherein, said substrate is Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesia substrate; Involuntary doped layer is as the light absorbing zone of III-nitride base phototransistor; The donor doping layer of big energy gap material is as the light-transmissive window layer; The donor doping layer of big energy gap material adopts but energy gap identical with light absorption layer material a shaft lattice constant III-nitride or its multicomponent alloy material preparation greater than light absorbing zone.
Preferably, the III-nitride base phototransistor in said two kinds of technical schemes is the n-i-p-i-n type, and donor doping layer, involuntary doped layer and acceptor doping layer constitute first pn knot of this III-nitride base phototransistor; Acceptor doping layer, second pn that receives main donor doping layer with alms giver's codoped layers, involuntary doped layer, alloy compositions graded bedding and big energy gap material to constitute this III-nitride base phototransistor tie.
Preferably; III-nitride base phototransistor in said two kinds of technical schemes adopts the normal incidence mode, and its donor doping layer is an emitter, and involuntary doped layer is a time emitter; The acceptor doping layer is a base stage; The donor doping layer of big energy gap material is a collector electrode, and emitter is positioned at below the collector electrode, and base stage is between emitter and collector electrode.
Further, the preparation method of the III-nitride base phototransistor in above-mentioned two kinds of technical schemes is provided, substrate is placed in the reaction chamber, on substrate, adopt epitaxial growth method to grow above-mentioned epitaxial structure successively; Said epitaxial growth method adopts metal-organic chemical vapor deposition equipment (MOCVD) method.
One of preferred version, when using silicon carbide substrates, III-nitride substrate etc. to do isoepitaxial growth, though need not introduce resilient coating also can, also can improve crystal mass through importing resilient coating or transition zone; Comprise the steps:
(1) high-temperature baking substrate: substrate is placed reaction chamber, and wherein, said substrate is silicon carbide substrates or III-nitride substrate; Temperature in the reaction chamber is raised to 1050 ℃～1200 ℃, the pressure in the reaction chamber is dropped to 50mbar～200mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, annealing 1min～15min, the high-temperature baking substrate is removed Superficial Foreign Body, makes the substrate surface atomic arrangement neat simultaneously;
(2) deposit involuntary doped layer: at 1000 ℃～1200 ℃, the pressure in the reaction chamber is set to 25mbar～1000mbar with the temperature maintenance in the reaction chamber, uses hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growing; Involuntary doped layer thickness is between 0.1 μ m～5 μ m, and involuntary doped layer adopts III-nitride or the preparation of its multicomponent alloy; Involuntary doped layer can effectively reduce defect concentration, promotes the two-dimensional growth of material, makes material surface smooth as far as possible, is provided as the template of subsequent growth III-nitride base phototransistor epitaxial structure service;
(3) deposition donor doping layer: with the temperature maintenance in the reaction chamber at 1000 ℃～1200 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, feed donor dopant, growth donor doping layer; Donor doping concentration is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between; The donor doping layer thickness is 0.1 μ m～5 μ m; The donor doping layer adopts donor-type doping III-nitride or the preparation of its multicomponent alloy; The donor doping layer is as the emitter of III-nitride base phototransistor;
(4) deposit involuntary doped layer: at 1000 ℃～1200 ℃, the pressure in the reaction chamber is set to 25mbar～1000mbar with the temperature maintenance in the reaction chamber, uses hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growing; Involuntary doped layer thickness is 0.05 μ m～1 μ m, and involuntary doped layer adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; Involuntary doped layer is as the inferior emitter of III-nitride base phototransistor;
(5) deposition acceptor doping layer: the temperature in the reaction chamber is dropped to 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, feed acceptor dopants, growth acceptor doping layer; The acceptor doping concentration of acceptor doping layer is between 1 * 10
16Cm
-3～1 * 10
19Cm
-3Between; The acceptor doping layer thickness is 0.05 μ m～1 μ m, and the acceptor doping layer adopts and prepared by principal mode doping III-nitride or its multicomponent alloy; The acceptor doping layer is as the base stage of III-nitride base phototransistor;
(6) deposition receives main and alms giver's codoped layers: with the temperature maintenance in the reaction chamber at 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed acceptor dopants and donor dopant simultaneously, growth receives main and alms giver's codoped layers; The acceptor doping concentration that receives main and alms giver's codoped layers is between 1 * 10
16Cm
-3～1 * 10
19Cm
-3Between, the donor doping concentration that receives main and alms giver's codoped layers is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, acceptor doping concentration is higher than donor doping concentration; Receiving master and alms giver's codoped layers thickness is 5nm～500nm, receives main the employing with alms giver's codoped layers prepared with alms giver's codope III-nitride or its multicomponent alloy by the master; This receives main and alms giver's codoped layers utilizes the strong characteristics of donor doping element surface transfer ability, improves crystal mass, weakens the influence of acceptor doping layer to follow-up structure growth;
(7) interruption of growth: after receiving main and alms giver's codoped layers growth ending; With the temperature maintenance in the reaction chamber at 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, stop to feed three clan source 5s～1800s, during keep five family's nitrogenous sources to continue to feed; This growth interruption process can weaken the memory effect of acceptor doping element, also can suppress the edge of climbing of epitaxial loayer dislocation simultaneously;
(8) deposit involuntary doped layer: the temperature in the reaction chamber is raised to 1000 ℃～1100 ℃, and the pressure in the reaction chamber is set to 25mbar～1000mbar, uses hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growing; Involuntary doped layer thickness is 0.1 μ m～1 μ m, and involuntary doped layer adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; Involuntary doped layer is as the light absorbing zone of III-nitride base phototransistor;
(9) deposit alloy content gradually variational layer: the temperature in the reaction chamber is dropped to 550 ℃～950 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the alloy compositions graded bedding of the involuntary doping of growing; The component of alloy compositions graded bedding gradually changes to the alloy compositions of the donor doping layer of big energy gap material from the alloy compositions of involuntary doped layer; The gradual change form of the component of alloy compositions graded bedding is linear or non-linear; Alloy compositions graded bedding thickness is 5nm～100nm, and the alloy compositions graded bedding adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; The introducing of this content gradually variational layer can make involuntary doped layer and than the mild transition in band rank between the donor doping layer of big energy gap material, help transporting of photo-generated carrier;
(10) the donor doping layer of the big energy gap material of deposition: with the temperature maintenance in the reaction chamber at 550 ℃～950 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; The donor doping layer of the big energy gap material of growth, the donor doping concentration of the donor doping layer of big energy gap material is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, the thickness of the donor doping layer of big energy gap material is between 10nm～500nm;
Its energy gap of lattice constant decision of semiconductor transistor.Because III-nitride can form the multicomponent alloy material each other, therefore, can realize different a shaft lattice constants, thereby obtain different energy gaps through regulating the component ratio of multicomponent alloy material.As shown in Figure 2, transverse axis is the axial lattice constant of III-nitride material a, and the longitudinal axis is the energy gap corresponding with it, through regulating the component ratio of III-nitride multicomponent alloy material, obtains different energy gaps thereby change the axial lattice constant of a.
Among Fig. 2, three region representations that curve enclosed III-nitride or its multicomponent alloy material a direction of principal axis lattice constant that can exist, and corresponding energy gap.A vertical dotted line is done in any zone in this figure; Certain 1 A is the material of preparation III-nitride base phototransistor on the selected dotted line; Then some A has to the zone of point between the B and puts the identical a shaft lattice constant of A on the dotted line, but that its energy gap is put A is big.According to these characteristics, the some A material that arbitrarily a bit can as preparation have lattice match light incidence window layer interior on the vertical dotted line to zone between the some B.
The donor doping layer of big energy gap material adopts but energy gap identical with light absorption layer material a shaft lattice constant III-nitride or its multicomponent alloy material preparation greater than light absorbing zone; The donor doping layer of big energy gap material, can select among Fig. 2 point A on the vertical dotted line in the zone between the some B arbitrarily a bit as its III-nitride or its multicomponent alloy material; Resilient coating or transition zone, involuntary doped layer, donor doping layer, involuntary doped layer, acceptor doping layer, receive A point among main and alms giver's codoped layers, the selected Fig. 1 of involuntary doped layer as its III-nitride that adopts or its multicomponent alloy material;
The donor doping layer of big energy gap material promptly is the collector electrode of III-nitride base phototransistor, also is the light-transmissive window layer of light-transmissive signal; Why this layer needs are selected the material of energy gap greatly for use, are for fear of collector electrode, and promptly than the donor doping layer of big energy gap material, to the absorption of transmittance signal, making light signal can incide light absorbing zone is in the involuntary doped layer.Simultaneously; The donor doping layer of big energy gap material has identical a shaft lattice constant with other epitaxial loayer of III-nitride base phototransistor; Therefore be the coherence growth during epitaxial growth, thickness adjusted wide ranges, the III-nitride base phototransistor integral body of the donor doping layer of big energy gap material have higher crystal mass; Acceptor doping layer, second pn that receives main donor doping layer with alms giver's codoped layers, involuntary doped layer, alloy compositions graded bedding and big energy gap material to constitute III-nitride base phototransistor tie;
(11) deposition contact layer: the temperature in the reaction chamber is warming up to 900 ℃～1100 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, feed donor dopant, the growth contact layer; Donor doping concentration is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, its donor doping concentration is higher than the donor doping concentration of the donor doping layer of donor doping layer and big energy gap material; Contact layer thickness is 5nm～100nm, and contact layer adopts donor-type heavy doping III-nitride or the preparation of its multicomponent alloy; This contact layer helps forming the ohmic contact of metal electrode and semi-conducting material;
(12) use nitrogen as current-carrying gas, the greenhouse cooling in the reaction chamber to room temperature, is boosted to atmospheric pressure with the pressure in the reaction chamber; There is the substrate of epitaxial structure in reaction chamber, to take out growth then, can obtains having the III-nitride base phototransistor of lattice match light-transmissive window layer.
Also can comprise the steps: to deposit resilient coating or transition zone between above-mentioned steps (1) and (2): the temperature in the reaction chamber is dropped to 450 ℃～650 ℃, and the pressure in the reaction chamber is set to 25mbar～1000mbar; Grown buffer layer or transition zone under hydrogen or nitrogen atmosphere; Resilient coating or transition region thickness are between 5nm～500nm, and resilient coating or transition zone adopt III-nitride or the preparation of its multicomponent alloy.
Two of preferred version when substrates such as using Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesia substrate is done heterogeneous growth, can adopt the technology of resilient coating or transition zone to solve the mismatch problems of III-nitride and substrate; Comprise the steps:
(1) high-temperature baking substrate: substrate is placed reaction chamber, and wherein, said substrate is Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesia substrate; Temperature in the reaction chamber is raised to 1050 ℃～1200 ℃, the pressure in the reaction chamber is dropped to 50mbar～200mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, annealing 1min～15min, the high-temperature baking substrate is removed Superficial Foreign Body, makes the substrate surface atomic arrangement neat simultaneously;
(2) deposition resilient coating or transition zone: the temperature in the reaction chamber is dropped to 450 ℃～650 ℃, and the pressure in the reaction chamber is set to 25mbar～1000mbar; Grown buffer layer or transition zone under hydrogen or nitrogen atmosphere; Resilient coating or transition region thickness are between 5nm～500nm, and resilient coating or transition zone adopt III-nitride or the preparation of its multicomponent alloy;
(3) deposit involuntary doped layer: at 1000 ℃～1200 ℃, the pressure in the reaction chamber is set to 25mbar～1000mbar with the temperature maintenance in the reaction chamber, uses hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growing; Involuntary doped layer thickness is between 0.1 μ m～5 μ m, and involuntary doped layer adopts III-nitride or the preparation of its multicomponent alloy; Involuntary doped layer can effectively reduce defect concentration, promotes the two-dimensional growth of material, makes material surface smooth as far as possible, is provided as the template of subsequent growth III-nitride base phototransistor epitaxial structure service;
(4) deposition donor doping layer: with the temperature maintenance in the reaction chamber at 1000 ℃～1200 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, feed donor dopant, growth donor doping layer; Donor doping concentration is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between; The donor doping layer thickness is 0.1 μ m～5 μ m; The donor doping layer adopts donor-type doping III-nitride or the preparation of its multicomponent alloy; The donor doping layer is as the emitter of III-nitride base phototransistor;
(5) deposit involuntary doped layer: at 1000 ℃～1200 ℃, the pressure in the reaction chamber is set to 25mbar～1000mbar with the temperature maintenance in the reaction chamber, uses hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growing; Involuntary doped layer thickness is 0.05 μ m～1 μ m, and involuntary doped layer adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; Involuntary doped layer is as the inferior emitter of III-nitride base phototransistor;
(6) deposition acceptor doping layer: the temperature in the reaction chamber is dropped to 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, feed acceptor dopants, growth acceptor doping layer; The acceptor doping concentration of acceptor doping layer is between 1 * 10
16Cm
-3～1 * 10
19Cm
-3Between; The acceptor doping layer thickness is 0.05 μ m～1 μ m, and the acceptor doping layer adopts and prepared by principal mode doping III-nitride or its multicomponent alloy; The acceptor doping layer is as the base stage of III-nitride base phototransistor;
(7) deposition receives main and alms giver's codoped layers: with the temperature maintenance in the reaction chamber at 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed acceptor dopants and donor dopant simultaneously, growth receives main and alms giver's codoped layers; The acceptor doping concentration that receives main and alms giver's codoped layers is between 1 * 10
16Cm
-3～1 * 10
19Cm
-3Between, the donor doping concentration that receives main and alms giver's codoped layers is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, acceptor doping concentration is higher than donor doping concentration; Receiving master and alms giver's codoped layers thickness is 5nm～500nm, receives main the employing with alms giver's codoped layers prepared with alms giver's codope III-nitride or its multicomponent alloy by the master; This receives main and alms giver's codoped layers utilizes the strong characteristics of donor doping element surface transfer ability, improves crystal mass, weakens the influence of acceptor doping layer to follow-up structure growth;
(8) interruption of growth: after receiving main and alms giver's codoped layers growth ending; With the temperature maintenance in the reaction chamber at 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, stop to feed three clan source 5s～1800s, during keep five family's nitrogenous sources to continue to feed; This growth interruption process can weaken the memory effect of acceptor doping element, also can suppress the edge of climbing of epitaxial loayer dislocation simultaneously;
(9) deposit involuntary doped layer: the temperature in the reaction chamber is raised to 1000 ℃～1100 ℃, and the pressure in the reaction chamber is set to 25mbar～1000mbar, uses hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer of growing; Involuntary doped layer thickness is 0.1 μ m～1 μ m, and involuntary doped layer adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; Involuntary doped layer is as the light absorbing zone of III-nitride base phototransistor;
(10) deposit alloy content gradually variational layer: the temperature in the reaction chamber is dropped to 550 ℃～950 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the alloy compositions graded bedding of the involuntary doping of growing; The component of alloy compositions graded bedding gradually changes to the alloy compositions of the donor doping layer of big energy gap material from the alloy compositions of involuntary doped layer; The gradual change form of the component of alloy compositions graded bedding is linear or non-linear; Alloy compositions graded bedding thickness is 5nm～200nm, and the alloy compositions graded bedding adopts involuntary doping III-nitride or the preparation of its multicomponent alloy; The introducing of this content gradually variational layer can make involuntary doped layer and than the mild transition in band rank between the donor doping layer of big energy gap material, help transporting of photo-generated carrier;
(11) the donor doping layer of the big energy gap material of deposition: with the temperature maintenance in the reaction chamber at 550 ℃～950 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; The donor doping layer of the big energy gap material of growth, the donor doping concentration of the donor doping layer of big energy gap material is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, the thickness of the donor doping layer of big energy gap material is between 10nm～500nm;
Its energy gap of lattice constant decision of semiconductor transistor.Because III-nitride can form the multicomponent alloy material each other, therefore, can realize different a shaft lattice constants, thereby obtain different energy gaps through regulating the component ratio of multicomponent alloy material.As shown in Figure 2, transverse axis is the axial lattice constant of III-nitride material a, and the longitudinal axis is the energy gap corresponding with it, through regulating the component ratio of III-nitride multicomponent alloy material, obtains different energy gaps thereby change the axial lattice constant of a.
Among Fig. 2, three region representations that curve enclosed III-nitride or its multicomponent alloy material a direction of principal axis lattice constant that can exist, and corresponding energy gap.A vertical dotted line is done in any zone in this figure; Certain 1 A is the material of preparation III-nitride base phototransistor on the selected dotted line; Then some A has to the zone of point between the B and puts the identical a shaft lattice constant of A on the dotted line, but that its energy gap is put A is big.According to these characteristics, the some A material that arbitrarily a bit can as preparation have lattice match light incidence window layer interior on the vertical dotted line to zone between the some B.
The donor doping layer of big energy gap material adopts but energy gap identical with light absorption layer material a shaft lattice constant III-nitride or its multicomponent alloy material preparation greater than light absorbing zone; The donor doping layer of big energy gap material, can select among Fig. 2 point A on the vertical dotted line in the zone between the some B arbitrarily a bit as its III-nitride or its multicomponent alloy material; Resilient coating or transition zone, involuntary doped layer, donor doping layer, involuntary doped layer, acceptor doping layer, receive A point among main and alms giver's codoped layers, the selected Fig. 1 of involuntary doped layer as its III-nitride that adopts or its multicomponent alloy material;
The donor doping layer of big energy gap material promptly is the collector electrode of III-nitride base phototransistor, also is the light-transmissive window layer of light-transmissive signal; Why this layer needs are selected the material of energy gap greatly for use, are for fear of collector electrode, and promptly than the donor doping layer of big energy gap material, to the absorption of transmittance signal, making light signal can incide light absorbing zone is in the involuntary doped layer.Simultaneously; The donor doping layer of big energy gap material has identical a shaft lattice constant with other epitaxial loayer of III-nitride base phototransistor; Therefore be the coherence growth during epitaxial growth, thickness adjusted wide ranges, the III-nitride base phototransistor integral body of the donor doping layer of big energy gap material have higher crystal mass; Acceptor doping layer, second pn that receives main donor doping layer with alms giver's codoped layers, involuntary doped layer, alloy compositions graded bedding and big energy gap material to constitute III-nitride base phototransistor tie;
(12) deposition contact layer: the temperature in the reaction chamber is warming up to 900 ℃～1100 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, in reaction chamber, feed donor dopant, the growth contact layer; Donor doping concentration is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, its donor doping concentration is higher than the donor doping concentration of the donor doping layer of donor doping layer and big energy gap material; Contact layer thickness is 5nm～100nm, and contact layer adopts donor-type heavy doping III-nitride or the preparation of its multicomponent alloy; This contact layer helps forming the ohmic contact of metal electrode and semi-conducting material;
(13) use nitrogen as current-carrying gas, the greenhouse cooling in the reaction chamber to room temperature, is boosted to atmospheric pressure with the pressure in the reaction chamber; There is the substrate of epitaxial structure in reaction chamber, to take out growth then, can obtains having the III-nitride base phototransistor of lattice match light-transmissive window layer.
In addition, in order to guarantee the better enforcement of above-mentioned two kinds of technical schemes, when deposition resilient coating or transition zone, the pressure in the reaction chamber is set to 350mbar～750mbar;
When the involuntary doped layer of deposition, the pressure in the reaction chamber is set to 100mbar～600mbar;
When deposition donor doping layer, the pressure in the reaction chamber is set to 100mbar～600mbar;
When the involuntary doped layer of deposition, the pressure in the reaction chamber is set to 100mbar～600mbar;
When deposition acceptor doping layer, the pressure in the reaction chamber is set to 50mbar～500mbar;
When deposition received main and alms giver's codoped layers, the pressure in the reaction chamber was set to 50mbar～500mbar;
When the involuntary doped layer of deposition, the pressure in the reaction chamber is set to 100mbar～600mbar;
When deposit alloy content gradually variational layer, the pressure in the reaction chamber is set to 25mbar～400mbar;
When the donor doping layer of the big energy gap material of deposition, the pressure in the reaction chamber is set to 25mbar～400mbar; And this layer adopts the Pulsed growth method, promptly comprises following three steps: 1. in reaction chamber, feed three clan source 1s～8s; 2. break off three clan source 1s～8s, and feed donor dopant; 3. circulate above some cycles of two steps, until reaching desired growth thickness; In whole process, keep five family's nitrogenous sources to continue to feed simultaneously;
When the deposition contact layer, the pressure in the reaction chamber is set to 100mbar～400mbar.
The present invention is with respect to prior art; Have following beneficial effect: the III-nitride base phototransistor with lattice match incident light Window layer of the present invention is through on the III-nitride or its multicomponent alloy material of light absorbing zone; Grow with it and have identical a shaft lattice constant but the bigger material of energy gap; Thereby prepare the light-transmissive window layer of this phototransistor, and realize device bulk crystal quality preferably.Simultaneously, use the content gradually variational layer, make and be with the mild transition in rank, strengthen transporting of photo-generated carrier, improve the service behaviour of III-nitride base phototransistor as transition zone.
In sum, adopt this III-nitride base phototransistor, guarantee the light transmissive difficult problem that on III-nitride base phototransistor, is difficult to realize better crystal mass that solved simultaneously with lattice match light-transmissive window layer.
Description of drawings
Fig. 1 is the structural representation of III-nitride base phototransistor of the present invention;
Fig. 2 is the sketch map that concerns of a shaft lattice constant of the present invention and energy gap;
Fig. 3 is the structural representation of the III-nitride base phototransistor among the embodiment 1;
Fig. 4 be embodiment 1 a shaft lattice constant and energy gap concern sketch map;
Fig. 5 is the structural representation of the III-nitride base phototransistor among the embodiment 2.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment goal of the invention of the present invention is done to describe in further detail, embodiment can not give unnecessary details at this one by one, but therefore execution mode of the present invention is not defined in following examples.Unless stated otherwise, the material and the processing method of the present invention's employing are present technique field conventional material and processing method.
This case study on implementation will specify III-nitride base photoelectric crystal tubular construction shown in Figure 2, and this photoelectric crystal tubular construction is the n-i-p-i-n type, adopt the form of normal incidence.
As shown in Figure 3; Adopt the epitaxial growth method growth III-nitride base phototransistor of metal-organic chemical vapor deposition equipment (MOCVD); Comprise c surface sapphire substrate 301 and epitaxial structure 302～311, said epitaxial structure comprises the resilient coating 302 that is grown on the c surface sapphire substrate 301, be grown in involuntary Doped GaN layer 303 on the resilient coating 302, be grown in alms giver Si Doped GaN layer 304 on the involuntary doped layer GaN layer 303, be grown in involuntary Doped GaN layer 305 on the alms giver Si Doped GaN layer 304, be grown in receiving main Mg Doped GaN layer 306, be grown in and receive receiving main Mg and alms giver Si codope GaN layer 307, be grown in the involuntary Doped GaN layer 308 that receives on main Mg and the alms giver Si codope GaN layer 307, be grown in Al and In and Ga content gradually variational AlInGaN layer 309 on the involuntary Doped GaN layer 308, be grown in the alms giver Si doped with Al InN layer 310 on Al and In and the Ga content gradually variational AlInGaN layer 309 and be grown in the alms giver Si heavy doping GaN layer 311 on the alms giver Si doped with Al InN layer 310 on the main Mg Doped GaN layer 306 on the involuntary Doped GaN layer 305.
The preparation method of this III-nitride base phototransistor has following 13 steps successively:
(1) the high-temperature baking Sapphire Substrate 301: Sapphire Substrate 301 is placed in the reaction chamber; The reaction cavity temperature rises to 1090 ℃, and the reaction chamber internal pressure is reduced to 100mbar, uses hydrogen as current-carrying gas, anneals 5 minutes, and the high-temperature baking substrate is removed Superficial Foreign Body, makes the substrate surface atomic arrangement neat simultaneously.
(2) deposition resilient coating 302: reaction chamber is cooled to 530 ℃, boosts to 650mbar, and current-carrying gas is used hydrogen, grown buffer layer 302.Resilient coating 302 thickness are 25 nm, adopt involuntary Doped GaN material preparation.
(3) the involuntary Doped GaN layer 303 of deposition: the reaction cavity temperature rises to 1060 ℃, and the reaction chamber internal pressure is reduced to 250mbar, uses hydrogen as current-carrying gas, the involuntary Doped GaN layer 303 of growing.Involuntary Doped GaN layer 303 thickness are 2.5 μ m, and involuntary Doped GaN layer 303 adopts involuntary Doped GaN material preparation.Grown buffer layer 302 and involuntary Doped GaN layer 303 on Sapphire Substrate 301 are as the template of subsequent growth III-nitride base phototransistor epitaxial structure.
(4) deposition alms giver Si Doped GaN layer 304: temperature maintenance is at 1060 ℃ in the reaction chamber, and the reaction chamber internal pressure is maintained 250mbar, uses hydrogen as current-carrying gas, in reaction chamber, feeds donor dopant SiH
4, growth alms giver Si Doped GaN layer 304, donor doping concentration is 3 * 10
18Cm
-3Alms giver Si Doped GaN layer 304 emitter as III-nitride base phototransistor, alms giver Si Doped GaN layer 304 thickness are 1 μ m, alms giver Si Doped GaN layer 304 adopts the material preparation of Si Doped GaN.
(5) the involuntary Doped GaN layer 305 of deposition: temperature maintenance is at 1060 ℃ in the reaction chamber, and the reaction chamber internal pressure is maintained 250mbar, uses hydrogen as current-carrying gas, the involuntary Doped GaN layer 305 of growing.Involuntary Doped GaN layer 305 thickness are 100nm, and involuntary Doped GaN is as the inferior emitter of III-nitride base phototransistor.
(6) deposition receives main Mg Doped GaN layer 306: the reaction cavity temperature is reduced to 920 ℃, and the reaction chamber internal pressure is reduced to 100mbar, uses hydrogen as current-carrying gas, in reaction chamber, feeds acceptor dopants Cp
2Mg, growth receives main Mg Doped GaN layer 306, and acceptor doping concentration is 6 * 10
17Cm
-3Receive main Mg Doped GaN layer 306 base stage as III-nitride base phototransistor, receiving main Mg Doped GaN layer 306 thickness is 100nm, receives main Mg Doped GaN layer 306 to adopt the material preparation of Mg Doped GaN.Alms giver Si Doped GaN layer 304, involuntary Doped GaN layer 305 and first pn that receives main Mg Doped GaN layer 306 to constitute III-nitride base phototransistor tie.
(7) deposition receives main Mg and alms giver Si codope GaN layer 307: temperature maintenance is at 920 ℃ in the reaction chamber, and the reaction chamber internal pressure is maintained 100mbar, uses hydrogen as current-carrying gas, in reaction chamber, feeds acceptor dopants Cp simultaneously
2Mg and donor dopant SiH
4, growth receives main Mg and alms giver Si codope GaN layer 307, and acceptor doping concentration is 4 * 10
17Cm
-3, donor doping concentration is 2 * 10
17Cm
-3Receiving main Mg and alms giver Si codope GaN layer 307 thickness is 100nm; Receive main Mg and alms giver Si codope GaN layer 307 to adopt Mg and Si codope GaN material preparation; It utilizes the strong characteristics of alms giver Si doped chemical surface migration ability; Improve crystal mass, weaken the influence that receives 306 pairs of follow-up structure growth of main Mg doped layer.
(8) interruption of growth: after receiving main Mg and alms giver Si codope GaN layer 307 growth ending; Temperature maintenance is at 920 ℃ in the reaction chamber, and the reaction chamber internal pressure is maintained 100mbar, uses hydrogen as current-carrying gas; Stop to feed the gallium source 900s of three races, during keep five family's nitrogenous sources to continue to feed.This growth interruption process can weaken the memory effect that receives main Mg doped chemical, also can suppress the edge of climbing of epitaxial loayer dislocation simultaneously.
(9) the involuntary Doped GaN layer 308 of deposition: the reaction cavity temperature rises to 1060 ℃, and the reaction chamber internal pressure rises to 250mbar, uses hydrogen as current-carrying gas, the involuntary Doped GaN layer 308 of growing.Involuntary Doped GaN layer 308 is the thick involuntary Doped GaN of 100nm, as the light absorbing zone of III-nitride base phototransistor.
(10) depositing Al and In and Ga content gradually variational AlInGaN layer 309: the reaction cavity temperature is reduced to 825 ℃; The reaction chamber internal pressure is reduced to 60mbar; Use nitrogen as current-carrying gas, growth Al and In and Ga content gradually variational AlInGaN layer 309, Al component and In component are increased to the component of Fig. 4 mid point D from 0% linearity that begins (the Al component are approximately 84%; The In component is approximately 16%), Ga component linearity is reduced to 0%.Al and In and Ga content gradually variational AlInGaN layer 309 thickness are 30nm, and Al and In and Ga content gradually variational AlInGaN layer 309 adopt involuntary doped with Al InGaN material preparation.The introducing of this alloy compositions graded bedding can make the mild transition in band rank between involuntary Doped GaN layer 308 and the alms giver Si doped with Al InN layer 310, helps transporting of photo-generated carrier.
(11) deposition alms giver Si doped with Al InN layer 310: temperature maintenance is at 825 ℃ in the reaction chamber, and the reaction chamber internal pressure is reduced to 60mbar, uses nitrogen as current-carrying gas, growth alms giver Si doped with Al InN layer 310, and donor doping concentration is 1 * 10
18Cm
-3, thickness is 150nm.
This layer adopts the Pulsed growth method, promptly comprises following three steps: 1. feed Al of three races and In source 2s; 2. break off Al of three races and In source 1s, and feed donor dopant SiH
43. in above two steps 675 cycle of circulation, in whole process, keep five family's nitrogenous sources to continue to feed simultaneously.Alms giver Si doped with Al InN layer 310 is the Si doped with Al InN of the component (the Al component is approximately 84%, and the In component is approximately 16%) that D is ordered among Fig. 4 for Al and In component.
Alms giver Si doped with Al InN layer 310 promptly is the collector electrode of III-nitride base phototransistor, also is the light-transmissive window layer.Alms giver Si doped with Al InN layer 310 has the band gap wideer than involuntary Doped GaN layer 308, can avoid it to needing the light absorption of detecting band, helps the collection of 308 pairs of light of involuntary Doped GaN layer.Simultaneously; Alms giver Si doped with Al InN layer 310 has identical a shaft lattice constant with other epitaxial loayer of III-nitride base phototransistor; Therefore be the coherence growth during epitaxial growth, thickness adjusted wide ranges, the III-nitride base phototransistor integral body of alms giver Si doped with Al InN layer 310 have higher crystal mass.Second pn that receives main Mg Doped GaN layer 306, receives main Mg and alms giver Si codope GaN layer 307, involuntary Doped GaN layer 308, Al component and In content gradually variational AlInN layer 309 and alms giver Si doped with Al InN layer 310 to constitute III-nitride base phototransistors ties.
(12) deposition alms giver Si heavy doping GaN layer 311: the reaction cavity temperature rises to 950 ℃, boosts to 250mbar, uses hydrogen as current-carrying gas, in reaction chamber, feeds donor dopant SiH
4, growth alms giver Si heavy doping GaN layer 311, donor doping concentration is 5 * 10
18Cm
-3Alms giver Si heavy doping GaN layer 311 thickness are 30nm, and alms giver Si heavy doping GaN layer 311 adopts the material preparation of Si Doped GaN, and it helps forming the ohmic contact of metal electrode and semi-conducting material as a kind of contact layer.
(13) current-carrying gas is used nitrogen; The reaction cavity temperature is reduced to room temperature; The reaction chamber internal pressure boosts to atmospheric pressure, growth is had the Sapphire Substrate of epitaxial structure in reaction chamber, take out, and can obtain having the III-nitride base phototransistor of lattice match light-transmissive window layer.
Embodiment 2
Present embodiment is except that following characteristic, and other are all identical with embodiment 1: in the present embodiment, substrate 301 is the GaN substrate; Do not deposit resilient coating 302; On GaN substrate 301, grow successively involuntary Doped GaN layer 303, alms giver Si Doped GaN layer 304, involuntary Doped GaN layer 305, receive main Mg Doped GaN layer 306, receive main Mg and alms giver Si codope GaN layer 307, involuntary Doped GaN layer 308, Al and In and Ga content gradually variational AlInGaN layer 309, alms giver Si doped with Al InN layer 310 and alms giver Si heavy doping GaN layer 311.This structure is as shown in Figure 5.
Embodiment 3
Present embodiment is except that following characteristic, and other are all identical with embodiment 1: in the present embodiment, when deposition resilient coating 302, the pressure in the reaction chamber is set to 750mbar; When the involuntary Doped GaN layer 303 of deposition, the pressure in the reaction chamber is set to 600mbar; When deposition alms giver Si Doped GaN layer 304, the pressure in the reaction chamber is set to 600mbar; When the involuntary Doped GaN layer 305 of deposition, the pressure in the reaction chamber is set to 600mbar; When deposition received main Mg Doped GaN layer 306, the pressure in the reaction chamber was set to 500mbar; When deposition received main Mg and alms giver Si codope GaN layer 307, the pressure in the reaction chamber was set to 500mbar; When the involuntary Doped GaN layer 308 of deposition, the pressure in the reaction chamber is set to 600mbar; When depositing Al and In and Ga content gradually variational AlInGaN layer 309, the pressure in the reaction chamber is set to 60mbar; When deposition alms giver Si doped with Al InN layer 310, the pressure in the reaction chamber is set to 60mbar; When deposition alms giver Si heavy doping GaN layer 311, the pressure in the reaction chamber is set to 400mbar.
Especially, adopt the normal pressure growth in this enforcement, growth rate is increased, save growth time, raise the efficiency.Simultaneously, the normal pressure growth can improve III-nitride material crystalline quality, has the III-nitride base phototransistor working performance of devices of lattice match light-transmissive window layer thereby promote.
The foregoing description is merely preferred embodiment of the present invention, is not to be used for limiting practical range of the present invention.Be that all equalizations of doing according to content of the present invention change and modification, all contained by claim of the present invention scope required for protection.
Claims (10)
1. III-nitride base phototransistor; It is characterized in that: comprise substrate (101) and growth epitaxial structure above that, said epitaxial structure comprises involuntary doped layer (103), donor doping layer (104), involuntary doped layer (105), acceptor doping layer (106) from bottom to up successively, receives donor doping layer (110) and contact layer (111) main and alms giver's codoped layers (107), involuntary doped layer (108), alloy compositions graded bedding (109), big energy gap material;
Wherein, said substrate is silicon carbide substrates, III-nitride substrate; Involuntary doped layer (108) is as the light absorbing zone of III-nitride base phototransistor; The donor doping layer (110) of big energy gap material is as the light-transmissive window layer; The donor doping layer (110) of big energy gap material adopts but energy gap identical with light absorption layer material a shaft lattice constant III-nitride or its multicomponent alloy material preparation greater than light absorbing zone.
2. III-nitride base phototransistor according to claim 1 is characterized in that: said epitaxial structure also comprises resilient coating or transition zone (102); Resilient coating or transition zone (102) are grown on the substrate (101), and involuntary doped layer (103) is grown on resilient coating or the transition zone (102).
3. III-nitride base phototransistor; It is characterized in that: comprise substrate (101) and growth epitaxial structure above that, said epitaxial structure comprises resilient coating or transition zone (102), involuntary doped layer (103), donor doping layer (104), involuntary doped layer (105), acceptor doping layer (106) from bottom to up successively, receives donor doping layer (110) and contact layer (111) main and alms giver's codoped layers (107), involuntary doped layer (108), alloy compositions graded bedding (109), big energy gap material;
Wherein, said substrate is Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesia substrate; Involuntary doped layer (108) is as the light absorbing zone of III-nitride base phototransistor; The donor doping layer (110) of big energy gap material is as the light-transmissive window layer; The donor doping layer (110) of big energy gap material adopts but energy gap identical with light absorption layer material a shaft lattice constant III-nitride or its multicomponent alloy material preparation greater than light absorbing zone.
4. according to each described III-nitride base phototransistor of claim 1-3; It is characterized in that: said III-nitride base phototransistor is the n-i-p-i-n type, and donor doping layer (104), involuntary doped layer (105) and acceptor doping layer (106) constitute first pn knot of this III-nitride base phototransistor; Acceptor doping layer (106), second pn that receives main donor doping layer (110) with alms giver's codoped layers (107), involuntary doped layer (108), alloy compositions graded bedding (109) and big energy gap material to constitute this III-nitride base phototransistor tie.
5. III-nitride base phototransistor according to claim 4; It is characterized in that: said III-nitride base phototransistor adopts the normal incidence mode, and its donor doping layer (104) is an emitter, and involuntary doped layer (105) is a time emitter; Acceptor doping layer (106) is a base stage; The donor doping layer (110) of big energy gap material is a collector electrode, and emitter is positioned at below the collector electrode, and base stage is between emitter and collector electrode.
6. the preparation method like each described III-nitride base phototransistor of claim 1-5 is characterized in that: substrate (101) is placed in the reaction chamber, on substrate, adopt epitaxial growth method to grow above-mentioned epitaxial structure successively; Said epitaxial growth method adopts the metal-organic chemical vapor deposition equipment method.
7. the preparation method of III-nitride base phototransistor according to claim 6 is characterized in that comprising the steps:
(1) high-temperature baking substrate (101): substrate (101) is placed reaction chamber, and wherein, said substrate is silicon carbide substrates, III-nitride substrate; Temperature in the reaction chamber is raised to 1050 ℃～1200 ℃, the pressure in the reaction chamber is dropped to 50mbar～200mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, annealing 1min～15min;
(2) deposit involuntary doped layer (103): with the temperature maintenance in the reaction chamber at 1000 ℃～1200 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer (103) of growing; Involuntary doped layer (103) thickness is between 0.1 μ m～5 μ m, and involuntary doped layer (103) adopts III-nitride or the preparation of its multicomponent alloy;
(3) deposition donor doping layer (104): with the temperature maintenance in the reaction chamber at 1000 ℃～1200 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed donor dopant, growth donor doping layer (104); Donor doping concentration is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between; Donor doping layer (104) thickness is 0.1 μ m～5 μ m; Donor doping layer (104) adopts donor-type doping III-nitride or the preparation of its multicomponent alloy;
(4) deposit involuntary doped layer (105): with the temperature maintenance in the reaction chamber at 1000 ℃～1200 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer (105) of growing; Involuntary doped layer (105) thickness is 0.05 μ m～1 μ m, and involuntary doped layer (105) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(5) deposition acceptor doping layer (106): the temperature in the reaction chamber is dropped to 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed acceptor dopants, growth acceptor doping layer (106); The acceptor doping concentration of acceptor doping layer (106) is between 1 * 10
16Cm
-3～1 * 10
19Cm
-3Between; Acceptor doping layer (106) thickness is 0.05 μ m～1 μ m, and acceptor doping layer (106) adopts and prepared by principal mode doping III-nitride or its multicomponent alloy;
(6) deposition receives main and alms giver's codoped layers (107): with the temperature maintenance in the reaction chamber at 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed acceptor dopants and donor dopant simultaneously, growth receives main and alms giver's codoped layers (107); The acceptor doping concentration that receives main and alms giver's codoped layers is between 1 * 10
16Cm
-3～1 * 10
19Cm
-3Between, the donor doping concentration that receives main and alms giver's codoped layers is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, acceptor doping concentration is higher than donor doping concentration; Receiving master and alms giver's codoped layers (107) thickness is 5nm～500nm, receives main the employing with alms giver's codoped layers (107) prepared with alms giver's codope III-nitride or its multicomponent alloy by the master;
(7) interruption of growth: after receiving main and alms giver's codoped layers (107) growth ending; With the temperature maintenance in the reaction chamber at 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, stop to feed three clan source 5s～1800s, during keep five family's nitrogenous sources to continue to feed;
(8) deposit involuntary doped layer (108): the temperature in the reaction chamber is raised to 1000 ℃～1100 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer (108) of growing; Involuntary doped layer (108) thickness is 0.1 μ m～1 μ m, and involuntary doped layer (108) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(9) deposit alloy content gradually variational layer (109): the temperature in the reaction chamber is dropped to 550 ℃～950 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the alloy compositions graded bedding (109) of the involuntary doping of growing; The component of alloy compositions graded bedding (109) gradually changes to the alloy compositions of the donor doping layer (110) of big energy gap material from the alloy compositions of involuntary doped layer (108); The gradual change form of the component of alloy compositions graded bedding (109) is linear or non-linear; Alloy compositions graded bedding (109) thickness is 5nm～200nm, and alloy compositions graded bedding (109) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(10) the donor doping layer (110) of the big energy gap material of deposition: with the temperature maintenance in the reaction chamber at 550 ℃～950 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; The donor doping layer (110) of the big energy gap material of growth, the donor doping concentration of the donor doping layer (110) of big energy gap material is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, the thickness of the donor doping layer (110) of big energy gap material is between 10nm～500nm;
The donor doping layer (110) of big energy gap material adopts but energy gap identical with light absorption layer material a shaft lattice constant III-nitride or its multicomponent alloy material preparation greater than light absorbing zone;
(11) deposition contact layer (111): the temperature in the reaction chamber is warming up to 900 ℃～1100 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed donor dopant, growth contact layer (111); Donor doping concentration is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, its donor doping concentration is higher than the donor doping concentration of the donor doping layer (110) of donor doping layer (104) and big energy gap material; Contact layer (111) thickness is 5nm～100nm, and contact layer (111) adopts donor-type heavy doping III-nitride or the preparation of its multicomponent alloy;
(12) use nitrogen as current-carrying gas, the greenhouse cooling in the reaction chamber to room temperature, is boosted to atmospheric pressure with the pressure in the reaction chamber; There is the substrate of epitaxial structure in reaction chamber, to take out growth then, can obtains having the III-nitride base phototransistor of lattice match light-transmissive window layer.
8. the preparation method of III-nitride base phototransistor according to claim 7; It is characterized in that: also comprise the steps: to deposit resilient coating or transition zone (102) between above-mentioned steps (1) and (2): the temperature in the reaction chamber is dropped to 450 ℃～650 ℃, and the pressure in the reaction chamber is set to 25mbar～1000mbar; Grown buffer layer or transition zone (102) under hydrogen or nitrogen atmosphere; Resilient coating or transition zone (102) thickness is between 5nm～500nm, and resilient coating or transition zone (102) adopt III-nitride or the preparation of its multicomponent alloy.
9. the preparation method of III-nitride base phototransistor according to claim 6 is characterized in that comprising the steps:
(1) high-temperature baking substrate (101): substrate (101) is placed reaction chamber, and wherein, said substrate is Sapphire Substrate, silicon substrate, lithium aluminate substrate, lithium gallium oxide substrate, magnesia substrate; Temperature in the reaction chamber is raised to 1050 ℃～1200 ℃, the pressure in the reaction chamber is dropped to 50mbar～200mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, annealing 1min～15min;
(2) deposition resilient coating or transition zone (102): the temperature in the reaction chamber is dropped to 450 ℃～650 ℃, and the pressure in the reaction chamber is set to 25mbar～1000mbar; Grown buffer layer or transition zone (102) under hydrogen or nitrogen atmosphere; Resilient coating or transition zone (102) thickness is between 5nm～500nm, and resilient coating or transition zone (102) adopt III-nitride or the preparation of its multicomponent alloy;
(3) deposit involuntary doped layer (103): with the temperature maintenance in the reaction chamber at 1000 ℃～1200 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer (103) of growing; Involuntary doped layer (103) thickness is between 0.1 μ m～5 μ m, and involuntary doped layer (103) adopts III-nitride or the preparation of its multicomponent alloy;
(4) deposition donor doping layer (104): with the temperature maintenance in the reaction chamber at 1000 ℃～1200 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed donor dopant, growth donor doping layer (104); Donor doping concentration is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between; Donor doping layer (104) thickness is 0.1 μ m～5 μ m; Donor doping layer (104) adopts donor-type doping III-nitride or the preparation of its multicomponent alloy;
(5) deposit involuntary doped layer (105): with the temperature maintenance in the reaction chamber at 1000 ℃～1200 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer (105) of growing; Involuntary doped layer (105) thickness is 0.05 μ m～1 μ m, and involuntary doped layer (105) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(6) deposition acceptor doping layer (106): the temperature in the reaction chamber is dropped to 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed acceptor dopants, growth acceptor doping layer (106); The acceptor doping concentration of acceptor doping layer (106) is between 1 * 10
16Cm
-3～1 * 10
19Cm
-3Between; Acceptor doping layer (106) thickness is 0.05 μ m～1 μ m, and acceptor doping layer (106) adopts and prepared by principal mode doping III-nitride or its multicomponent alloy;
(7) deposition receives main and alms giver's codoped layers (107): with the temperature maintenance in the reaction chamber at 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed acceptor dopants and donor dopant simultaneously, growth receives main and alms giver's codoped layers (107); The acceptor doping concentration that receives main and alms giver's codoped layers is between 1 * 10
16Cm
-3～1 * 10
19Cm
-3Between, the donor doping concentration that receives main and alms giver's codoped layers is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, acceptor doping concentration is higher than donor doping concentration; Receiving master and alms giver's codoped layers (107) thickness is 5nm～500nm, receives main the employing with alms giver's codoped layers (107) prepared with alms giver's codope III-nitride or its multicomponent alloy by the master;
(8) interruption of growth: after receiving main and alms giver's codoped layers (107) growth ending; With the temperature maintenance in the reaction chamber at 850 ℃～1150 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, stop to feed three clan source 5s～1800s, during keep five family's nitrogenous sources to continue to feed;
(9) deposit involuntary doped layer (108): the temperature in the reaction chamber is raised to 1000 ℃～1100 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the involuntary doped layer (108) of growing; Involuntary doped layer (108) thickness is 0.1 μ m～1 μ m, and involuntary doped layer (108) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(10) deposit alloy content gradually variational layer (109): the temperature in the reaction chamber is dropped to 550 ℃～950 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas, the alloy compositions graded bedding (109) of the involuntary doping of growing; The component of alloy compositions graded bedding (109) gradually changes to the alloy compositions of the donor doping layer (110) of big energy gap material from the alloy compositions of involuntary doped layer (108); The gradual change form of the component of alloy compositions graded bedding (109) is linear or non-linear; Alloy compositions graded bedding (109) thickness is 5nm～200nm, and alloy compositions graded bedding (109) adopts involuntary doping III-nitride or the preparation of its multicomponent alloy;
(11) the donor doping layer (110) of the big energy gap material of deposition: with the temperature maintenance in the reaction chamber at 550 ℃～950 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; The donor doping layer (110) of the big energy gap material of growth, the donor doping concentration of the donor doping layer (110) of big energy gap material is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, the thickness of the donor doping layer (110) of big energy gap material is between 10nm～500nm;
The donor doping layer (110) of big energy gap material adopts but energy gap identical with light absorption layer material a shaft lattice constant III-nitride or its multicomponent alloy material preparation greater than light absorbing zone;
(12) deposition contact layer (111): the temperature in the reaction chamber is warming up to 900 ℃～1100 ℃; Pressure in the reaction chamber is set to 25mbar～1000mbar; Use hydrogen, nitrogen or hydrogen-nitrogen mixture gas as current-carrying gas; In reaction chamber, feed donor dopant, growth contact layer (111); Donor doping concentration is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between, its donor doping concentration is higher than the donor doping concentration of the donor doping layer (110) of donor doping layer (104) and big energy gap material; Contact layer (111) thickness is 5nm～100nm, and contact layer (111) adopts donor-type heavy doping III-nitride or the preparation of its multicomponent alloy;
(13) use nitrogen as current-carrying gas, the greenhouse cooling in the reaction chamber to room temperature, is boosted to atmospheric pressure with the pressure in the reaction chamber; There is the substrate of epitaxial structure in reaction chamber, to take out growth then, can obtains having the III-nitride base phototransistor of lattice match light-transmissive window layer.
10. according to the preparation method of each described III-nitride base phototransistor of claim 7-9, it is characterized in that:
When deposition resilient coating or transition zone (102), the pressure in the reaction chamber is provided with 350mbar～750mbar;
When the involuntary doped layer of deposition (103), the pressure in the reaction chamber is set to 100mbar～600mbar;
When deposition donor doping layer (104), the pressure in the reaction chamber is set to 100mbar～600mbar;
When the involuntary doped layer of deposition (105), the pressure in the reaction chamber is set to 100mbar～600mbar;
When deposition acceptor doping layer (106), the pressure in the reaction chamber is set to 50mbar～500mbar;
When deposition received main and alms giver's codoped layers (107), the pressure in the reaction chamber was set to 50mbar～500mbar;
When the involuntary doped layer of deposition (108), the pressure in the reaction chamber is set to 100mbar～600mbar;
When deposit alloy content gradually variational layer (109), the pressure in the reaction chamber is set to 25mbar～400mbar;
When the donor doping layer (110) of the big energy gap material of deposition, the pressure in the reaction chamber is set to 25mbar～400mbar; And this layer adopts the Pulsed growth method, promptly comprises following three steps: 1. in reaction chamber, feed three clan source 1s～8s; 2. break off three clan source 1s～8s, and feed donor dopant; 3. circulate above some cycles of two steps, until reaching desired growth thickness; In whole process, keep five family's nitrogenous sources to continue to feed simultaneously;
When deposition contact layer (111), the pressure in the reaction chamber is set to 100mbar～400mbar.
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