CN102738701A - Distributed feedback laser and preparation method thereof - Google Patents
Distributed feedback laser and preparation method thereof Download PDFInfo
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- CN102738701A CN102738701A CN201210213813XA CN201210213813A CN102738701A CN 102738701 A CN102738701 A CN 102738701A CN 201210213813X A CN201210213813X A CN 201210213813XA CN 201210213813 A CN201210213813 A CN 201210213813A CN 102738701 A CN102738701 A CN 102738701A
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Abstract
The invention provides a distributed feedback laser and a preparation method thereof. The distributed feedback laser comprises the following layers deposited on a substrate from bottom to top: a lower limit layer, a lower waveguide layer, an active region, an upper waveguide layer, an upper limit layer and an ohmic contact layer; the two sides of the middle part of the distributed feedback laser are etched with grooves, and the bottoms of the grooves are formed in any positions between the ohmic contact layer and the active region; and a ridge type waveguide structure is formed between the two grooves in the middle of the distributed feedback laser, and two side faces of the ridge type waveguide structure are provided with distributed feedback gratings. When the distributed feedback laser is used, the times of extension can be reduced, and errors caused by multiple extensions can be avoided.
Description
Technical field
The present invention relates to optics industry laser technique field, relate in particular to a kind of distributed feedback laser and preparation method thereof.
Background technology
Er-doped fiber super-fluorescence light source (ED-SFS) has become the preferred light source of high-precision optical fiber gyro with its excellent performance, and as the core component of ED-SFS, pump laser also just becomes the focus of research naturally.Wherein, the pumping source of 980nm is owing to having higher pumping efficiency and by extensive concern.Traditional 980nm laser adopts FP (Fabry-Perot) chamber ridge waveguide structure, and in full temperature scope, output stage is unstable, and its wavelength variable quantity surpasses 20nm, and side mode suppression ratio is also very low.
Aspect the raising side mode suppression ratio, what the most generally adopt both at home and abroad is distributed Feedback (Distributed Feedback is called for short DFB) structure.Fig. 1 is the structural representation of prior art distributed feedback laser.As shown in Figure 1, this laser comprises following each layer that is deposited on successively on the substrate 101 from top to bottom: lower limit layer 102; Lower waveguide layer 103; Active area 104; Last ducting layer 106; Bragg grating 105; Upper limiting layer 107; Covering 108; Ohmic contact layer 109.
For distributed feedback laser shown in Figure 1, lower limit layer 102; Lower waveguide layer 103; Active area 104 forms in the epitaxy technique in the first time with last ducting layer 106.After the first time, epitaxy technique formed, epitaxial wafer is taken out, through the method for electron beam exposure and reactive ion etching, form Bragg grating 105.Then, epitaxial wafer is reentered in the deposit cavity, carries out the epitaxy technique second time, form upper limiting layer 107; Covering 108 and ohmic contact layer 109.
It is thus clear that, owing to behind the supreme ducting layer of epitaxial growth, will make Bragg grating, must adopt extension for the second time, very harsh to the requirement of technology, the growth difficulty of epitaxial material is big, and rate of finished products is very low, and the stability and the reliability of device performance are very poor.
Summary of the invention
The technical problem that (one) will solve
For solving above-mentioned one or more problems, the invention provides a kind of distributed feedback laser and preparation method thereof, reduce the number of times of extension, avoided the error introduced because of extension repeatedly, improve precision, the raising rate of finished products reduces cost.
(2) technical scheme
According to an aspect of the present invention, a kind of distributed feedback laser is provided, has comprised following each layer that is deposited on the substrate from bottom to top: lower limit layer, lower waveguide layer, active area, last ducting layer, upper limiting layer and ohmic contact layer; The both sides, middle part of distributed feedback laser are etched with groove, and the bottom of groove is formed at the optional position between ohmic contact layer and the active area; At the middle part of distributed feedback laser, form ridged waveguide structure between two grooves, the two sides of this ridge waveguide structure form the distributed Feedback grating.
According to another aspect of the present invention, a kind of preparation method of distributed feedback laser is provided also, has comprised: deposit from bottom to top: lower limit layer, lower waveguide layer, active area, last ducting layer, upper limiting layer and ohmic contact layer at substrate; The etching groove in the both sides, middle part of distributed feedback laser, the bottom of groove to ohmic contact layer, the optional position that active area is above, thus between two grooves, form ridged waveguide structure; And at the two sides of ridge waveguide structure formation distributed Feedback grating.
(3) beneficial effect
Can find out that from technique scheme distributed feedback laser of the present invention and preparation method thereof has following beneficial effect:
1, among the present invention; Make side-coupled DFB grating in the ridge waveguide both sides, the side-coupled mechanism through grating in the coating layer and active area light field realizes distributed feed-back, has more stable light output when guaranteeing higher side mode suppression ratio; Avoided the use of traditional Distributed Feedback Laser secondary epitaxy technology in manufacturing process; This will simplify technology greatly, thereby reduce manufacture difficulty and cost, and effectively improve rate of finished products;
2, among the present invention; Last ducting layer and lower waveguide layer adopt linear graded-index structure; The transmission of the compound and light field of charge carrier is limited in different zones respectively; Thereby greatly reduce the optical power density of chamber face, improved chamber surface damage threshold value (Catastrophic Optical Damage is called for short COD).
Description of drawings
Fig. 1 is the structural representation of prior art ridge waveguide distributed feedback laser;
Fig. 2 is the structural representation of the side-coupled ridge waveguide distributed feedback laser of the embodiment of the invention;
Fig. 3 is the side-coupled ridge waveguide distributed feedback laser of embodiment of the invention preparation method's a flow chart.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
Need to prove that in accompanying drawing or specification description, similar or identical part is all used identical figure number.And in the accompanying drawings, to simplify or convenient the sign.Moreover, the implementation that does not illustrate in the accompanying drawing or describe, the form of knowing for those of ordinary skill in the affiliated technical field.In addition,, should be appreciated that parameter need not definitely to equal corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value though this paper can provide the demonstration of the parameter that comprises particular value.
In one exemplary embodiment of the present invention, a kind of side-coupled ridge waveguide distributed feedback laser has been proposed.Fig. 2 is the structural representation of the side-coupled ridge waveguide distributed feedback laser of the embodiment of the invention.As shown in Figure 2, the side-coupled ridge waveguide distributed feedback laser of present embodiment comprises following each layer that is deposited on the substrate 201 from top to bottom: lower limit layer 204, lower waveguide layer 205, active area 206, last ducting layer 207, upper limiting layer 208 and ohmic contact layer 210.Wherein, both sides, the middle part etching groove of said side-coupled ridge waveguide distributed feedback laser, the bottom of groove is to below the said ohmic contact layer, the optional position that said active area is above; Between two grooves, form ridged waveguide structure 211, the two sides of this ridge waveguide structure 211 form distributed Feedback grating 212.
In side-coupled ridge waveguide distributed feedback laser shown in Figure 2; If the bottom of groove is lower than active area; Then can cause normally bright dipping of laser; And if ohm layer is only arrived in the bottom of groove, then the distributed Feedback grating 212 of these ridge waveguide structure 211 two sides can not be realized distributed Feedback with the active area light field.And in the preferred embodiment of the invention; Position in the bottom of groove to the upper limiting layer; Like this; Can reduce the threshold current of device through restriction, can realize the work of side direction basic mode simultaneously, be easy to and optical fiber realizes that high efficiency is coupled the lateral limitation of injecting charge carrier and charge carrier sideways diffusion.
As shown in Figure 2; The strip structure of ridged waveguide structure 211 for adopting photoetching and dry etching technology etching to obtain, the ridge of ridged waveguide structure is wide to be between 2 μ m to 4 μ m, is preferably 2.5 μ m; The width of both sides groove is preferably 20 μ m between 10 μ m to 30 μ m.Side-coupled DFB grating 212 is produced on the both sides of ridge waveguide 211 for adopting nanometer embossing and dry etching technology, and its width is preferably 0.5 μ m between 0.4 μ m to 0.6 μ m.In addition, the progression of distributed Feedback grating is between 1 to 3 grade, and the cycle is between between the 440nm to 480nm.Preferably, side-coupled DFB grating is 3 grades of gratings, and the cycle is 460nm.
In the present embodiment; Lower limit layer 204, lower waveguide layer 205, active area 206, go up ducting layer 207, upper limiting layer 208,, ohmic contact layer 210 etc. is all through an extension formation; And distributed Feedback grating 212 forms after this epitaxy technique, thereby has avoided the use of traditional Distributed Feedback Laser secondary epitaxy technology in manufacturing process, and this will simplify technology greatly; Thereby reduce manufacture difficulty and cost, and effectively improve rate of finished products.
In side-coupled ridge waveguide distributed feedback laser shown in Figure 2, substrate 201 is the n-GaAs material of (100) face, and this substrate 201 is used for epitaxial growth laser layers of material above that.Lower limit layer 204 is n-Al
0.35Ga
0.65As material, its thickness are 1.5 μ m; Upper limiting layer 208 is p-Al
0.35Ga
0.65As material, its thickness are 1.5 μ m; Ohmic contact layer 210 is P
+-GaAs material, its thickness are 200nm.
In the further preferred embodiment of the present invention, lower waveguide layer 205 adopts linear graded-index structure with last ducting layer 207, and outside from active area 206, the refractive index of lower waveguide layer 205 and last ducting layer 207 reduces gradually.Preferably, lower waveguide layer 205 is Al
0.35-0.05GaAs material, its thickness are 70nm, and the Al component is linear gradual by 0.35 to 0.05.Last ducting layer 207 is Al
0.05-0.35GaAs material, its thickness are 70nm, and the Al component is linear gradual by 0.05 to 0.35.Last ducting layer and lower waveguide layer adopt linear graded-index structure, the transmission of the compound and light field of charge carrier is limited in different zones respectively, thereby greatly reduces the optical power density of chamber face, have improved chamber surface damage threshold value
In addition, as shown in Figure 2, between substrate 201 and lower limit layer 204, also have resilient coating 202 and following component resilient coating 203.Resilient coating 202 and following component resilient coating 203 are used to regulate the lattice mismatch between substrate and the lower limit layer.Preferably, this resilient coating 202 is the n-GaAs material, and its thickness is 0.5 μ m; This time component resilient coating 203 is n-Al
0.05-0.35GaAs material, its thickness are 0.15 μ m, its down and on, the content of Al composition increases gradually.In addition, between upper limiting layer and ohmic contact layer, also comprise component graded layer 209, be used to regulate the lattice match of upper limiting layer 204 and ohmic contact layer 210.Wherein, component graded layer 209 is p-Al
0.35-0.05GaAs material, its thickness are 0.15 μ m, and from bottom to top, the content of Al composition reduces gradually.
In the present embodiment, active area 206 is the InGaAs/GaAs quantum well structure, is produced on the lower waveguide layer 205, and this active area 206 comprises the GaAs barrier layer of 10nm, the In of 7nm
0.2Ga
0.8The GaAs barrier layer of As quantum well layer and 10nm.Through preparing three layers active area, thereby this quantum well structure can effectively limit charge carrier, improves differential quantum efficency, reduces the threshold current of laser.
More than provided the concrete composition of making each layer of the side-coupled ridge waveguide distributed feedback laser of the present invention.It will be apparent to those skilled in the art that except above-mentioned material the InGaAs/GaAs quantum well layer of active area can also adopt InGaAs/InGaAsP to replace; The AlGaAs layer of last ducting layer and lower waveguide layer can also adopt InGaAsP to replace or the like, is not described in detail here.
In another exemplary embodiment of the present invention, a kind of preparation method of side-coupled ridge waveguide distributed feedback laser has been proposed also.Fig. 3 is the side-coupled ridge waveguide distributed feedback laser of embodiment of the invention preparation method's a flow chart.As shown in Figures 2 and 3, present embodiment comprises:
Steps A is utilized MOCVD growing epitaxial structure on substrate 201, this epitaxial structure comprises: resilient coating 202, component resilient coating 203, lower limit layer 204; Lower waveguide layer 205; Active area 206; Last ducting layer 207; Upper limiting layer 208; Component graded layer 209; Ohmic contact layer 210;
Step B, spin coating photoresist on epitaxial structure adopts photoetching technique to produce flagpole pattern;
Step C; With the flagpole pattern is mask, adopts the dry etching technology etching groove, thereby forms ridged waveguide structure 211 at the middle part of two grooves; The ridge of ridged waveguide structure 211 is wide to be 2.5 μ m, and its degree of depth contains 209 layers of ohmic contact layers 210, component graded layer and 208 layers of upper limiting layers;
Step D, resist coating on ridged waveguide structure 211 adopts nanometer embossing on the photoresist of ridged waveguide structure, to produce required distributed feed-back formula raster graphic;
Step e is a mask with distributed feed-back formula raster graphic, adopts dry etching technology to etch distributed feed-back formula grating 212 in the both sides of ridge waveguide; Wherein, This side-coupled distributed feed-back formula grating 212 is until the bottom of ridged waveguide structure, and it is 3 grades of gratings, and the cycle is 460nm.
After step e, also need carry out the common step of preparation laser, like the preparation insulating barrier; Depositing electrode at device end face plating anti-reflection film and high-reflecting film, is cleaved into the step of singulated dies; These steps are identical with correlation step of the prior art, are not described in detail here.
In sum, side-coupled ridge waveguide distributed feedback laser that the present invention proposes and preparation method thereof, the side-coupled mechanism realization Prague feedback through grating in the coating layer and active area light field improves the selectivity to wavelength, improves side mode suppression ratio.Avoid secondary epitaxy technology simultaneously, through simplifying rate of finished products and the reliability that processing step has improved device.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (15)
1. a distributed feedback laser comprises following each layer that is deposited on the substrate from bottom to top: lower limit layer, lower waveguide layer, active area, last ducting layer, upper limiting layer and ohmic contact layer;
The both sides, middle part of said distributed feedback laser are etched with groove, and the bottom of said groove is formed at the optional position between said ohmic contact layer and the said active area;
At the middle part of said distributed feedback laser, form ridged waveguide structure between the two said grooves, the two sides of this ridge waveguide structure form the distributed Feedback grating.
2. distributed feedback laser according to claim 1, wherein, the bottom of said groove is formed at the position in the said upper limiting layer.
3. distributed feedback laser according to claim 1, wherein, the progression of said distributed Feedback grating is between 1 to 3 grade, and the cycle is between between the 440nm to 480nm.
4. distributed feedback laser according to claim 3 wherein, is positioned at the distributed Feedback grating symmetry of said ridged waveguide structure and arranged on left and right sides, and this distributed Feedback grating is 3 grades of gratings, and the cycle is 460nm.
5. distributed feedback laser according to claim 1; Wherein, The width of said groove is between 10 μ m to 30 μ m, and the width of said ridged waveguide structure is between 2 μ m to 4 μ m, and the width of said distributed Feedback grating is between 0.4 μ m to 0.6 μ m.
6. distributed feedback laser according to claim 5, wherein, the width of said groove is 20 μ m, the width 2.5 μ m of said ridged waveguide structure, the width of said distributed Feedback grating is 0.5 μ m.
7. according to each described distributed feedback laser in the claim 1 to 6, wherein, said lower waveguide layer and last ducting layer are linear graded-index structure, and both refractive indexes outwards reduce from said active area gradually.
8. distributed feedback laser according to claim 7, wherein:
Lower waveguide layer is Al
0.35-0.05GaAs material, its thickness are 70nm, and the Al component is linear gradual by 0.35 to 0.05;
Last ducting layer is Al
0.05-0.35GaAs material, its thickness are 70nm, and the Al component is linear gradual by 0.05 to 0.35.
9. according to each described distributed feedback laser in the claim 1 to 6, also comprise:
Resilient coating and following component resilient coating are formed between said substrate and the lower limit layer, are used to regulate the lattice mismatch between substrate and the lower limit layer;
Last component resilient coating is formed between said upper limiting layer and the ohmic contact layer, is used to regulate the lattice match of upper limiting layer and ohmic contact layer.
10. distributed feedback laser according to claim 9, wherein,
Said resilient coating is the n-GaAs material, and its thickness is 0.5 μ m;
Said component resilient coating down is n-Al
0.05-0.35GaAs material, its thickness are 0.15 μ m, and the content of Al composition increases from bottom to top gradually;
Said component graded layer is p-Al
0.35-0.05GaAs material, its thickness are 0.15 μ m, and the content of Al composition reduces from bottom to top gradually.
11. according to each described distributed feedback laser in the claim 1 to 6, wherein,
Said substrate is the n-GaAs material of (100) face;
Said lower limit layer is n-Al
0.35Ga
0.65As material, its thickness are 1.5 μ m;
Said upper limiting layer is p-Al
0.35Ga
0.65As material, its thickness are 1.5 μ m;
Said ohmic contact layer is P
+-GaAs material, its thickness are 200nm.
12. according to each described distributed feedback laser in the claim 1 to 6, wherein, said active area comprises from bottom to top:
Lower barrierlayer is the GaAs material, and its thickness is 10nm;
Quantum well layer is In
0.2Ga
0.8As material, its thickness are 7nm; And
Last barrier layer is the GaAs material, and its thickness is 10nm.
13. the preparation method of a distributed feedback laser comprises:
Deposit from bottom to top at substrate: lower limit layer, lower waveguide layer, active area, last ducting layer, upper limiting layer and ohmic contact layer;
The etching groove in the both sides, middle part of said distributed feedback laser, the optional position of the bottom of said groove between said ohmic contact layer and said active area, thus between two grooves, form ridged waveguide structure; And
Two sides in said ridge waveguide structure form the distributed Feedback grating.
14. distributed feedback laser preparation method according to claim 13, wherein, said the step of etching groove comprises in the both sides, middle part of distributed feedback laser:
Spin coating photoresist above ohmic contact layer;
Adopt photoetching technique to make flagpole pattern; And
With said flagpole pattern is mask, adopts dry etching technology that ohmic contact layer and upper limiting layer are carried out etching formation groove, and the bottom of said groove is positioned at said upper limiting layer, thereby forms ridged waveguide structure at the middle part of two grooves.
15. distributed feedback laser preparation method according to claim 13, wherein, the step that said two sides in the ridge waveguide structure form the distributed Feedback grating comprises:
Spin coating photoresist on ridged waveguide structure;
Adopt nanometer embossing on the photoresist of ridged waveguide structure, to produce distributed feed-back formula raster graphic; And
With distributed feed-back formula raster graphic is mask, adopts dry etching technology to etch distributed feed-back formula grating in the both sides of ridge waveguide.
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| CN106848835A (en) * | 2016-12-22 | 2017-06-13 | 华中科技大学 | A kind of Distributed Feedback Laser based on surface grating |
| CN107147447A (en) * | 2017-04-18 | 2017-09-08 | 中山大学 | A kind of smooth beat signal transmitting chip and preparation method |
| CN107611772A (en) * | 2017-09-25 | 2018-01-19 | 清华大学 | Electroabsorption modulated laser and preparation method thereof |
| CN107706738A (en) * | 2016-08-09 | 2018-02-16 | 清华大学 | Distributed feedback semiconductor laser and preparation method thereof |
| CN108963753A (en) * | 2018-06-26 | 2018-12-07 | 华慧芯科技（天津）有限公司 | Nano-imprint method realizes insulating layer windowing process on Distributed Feedback Laser ridge waveguide |
| CN109462144A (en) * | 2018-11-09 | 2019-03-12 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of GaN base low order surface grating Distributed Feedback Laser |
| CN109643881A (en) * | 2016-07-27 | 2019-04-16 | 巴黎第十大学 | Distributed feedback laser diode |
| CN112366518A (en) * | 2020-11-03 | 2021-02-12 | 因林光电科技(苏州)有限公司 | Distributed feedback laser and preparation method thereof |
| CN112688164A (en) * | 2020-12-24 | 2021-04-20 | 中国科学院半导体研究所 | Lateral composite grating DFB laser structure and application |
| CN115693402A (en) * | 2023-01-05 | 2023-02-03 | 深圳市星汉激光科技股份有限公司 | Laser chip regulated and controlled by 3D photonic crystal and preparation method |
| CN116207608A (en) * | 2023-01-20 | 2023-06-02 | 中国科学院半导体研究所 | Quantum dot laser structure and preparation method thereof |
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| CN109643881A (en) * | 2016-07-27 | 2019-04-16 | 巴黎第十大学 | Distributed feedback laser diode |
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| CN107706738A (en) * | 2016-08-09 | 2018-02-16 | 清华大学 | Distributed feedback semiconductor laser and preparation method thereof |
| CN107706738B (en) * | 2016-08-09 | 2020-07-28 | 清华大学 | Distributed feedback semiconductor laser and preparation method thereof |
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| CN107147447A (en) * | 2017-04-18 | 2017-09-08 | 中山大学 | A kind of smooth beat signal transmitting chip and preparation method |
| CN107611772A (en) * | 2017-09-25 | 2018-01-19 | 清华大学 | Electroabsorption modulated laser and preparation method thereof |
| CN108963753A (en) * | 2018-06-26 | 2018-12-07 | 华慧芯科技（天津）有限公司 | Nano-imprint method realizes insulating layer windowing process on Distributed Feedback Laser ridge waveguide |
| CN109462144A (en) * | 2018-11-09 | 2019-03-12 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of GaN base low order surface grating Distributed Feedback Laser |
| CN112366518A (en) * | 2020-11-03 | 2021-02-12 | 因林光电科技(苏州)有限公司 | Distributed feedback laser and preparation method thereof |
| CN112366518B (en) * | 2020-11-03 | 2022-11-11 | 因林光电科技(苏州)有限公司 | Distributed feedback laser and preparation method thereof |
| CN112688164A (en) * | 2020-12-24 | 2021-04-20 | 中国科学院半导体研究所 | Lateral composite grating DFB laser structure and application |
| CN115693402A (en) * | 2023-01-05 | 2023-02-03 | 深圳市星汉激光科技股份有限公司 | Laser chip regulated and controlled by 3D photonic crystal and preparation method |
| CN116207608A (en) * | 2023-01-20 | 2023-06-02 | 中国科学院半导体研究所 | Quantum dot laser structure and preparation method thereof |
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Application publication date: 20121017 |