CN107147447A - A kind of smooth beat signal transmitting chip and preparation method - Google Patents
A kind of smooth beat signal transmitting chip and preparation method Download PDFInfo
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- CN107147447A CN107147447A CN201710255672.0A CN201710255672A CN107147447A CN 107147447 A CN107147447 A CN 107147447A CN 201710255672 A CN201710255672 A CN 201710255672A CN 107147447 A CN107147447 A CN 107147447A
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- laser
- beat signal
- transmitting chip
- feedback
- formula
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
- H04B10/5059—Laser transmitters using external modulation using a feed-forward signal generated by analysing the optical or electrical input
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of smooth beat signal transmitting chip, including micro-loop laser, multi-mode interference coupler, static distribution formula feedback laser, dynamic modulation distributed Feedback formula laser, output directional coupler and output waveguide and semiconductor transistor elements；By in the common ground electrode of chip back increase, realizing the Injection Current Independent adjustable of device on piece；Meanwhile, coplanar metal transmission line is made on the two distributed Feedback formula lasers, electric signal is completed and is changed to the directly upper of optical signal, realize the direct modulation and transmitting of electric signal；The multi-mode interference coupler, output directional coupler and output waveguide are connected with micro-loop laser；Described semiconductor transistor elements are connected with other devices in light beat signal transmitting chip；Wherein, light beat signal transmitting chip is molded into Physical Mechanism into locking and optical feedback return circuit using photomixing, side, exports the beat signal of a low noise.
Description
Technical field
The present invention relates to the high-speed semiconductor photoelectric device of the communications field, more particularly to a kind of smooth beat signal transmitting chip
And preparation method.
Background technology
With the progress in epoch, people are to the bandwidth of communication and the requirement more and more higher of speed, light carrier radio communication technology
Proposition, can be good at combining bandwidth high speed long-distance optical fiber and communicate and the easily advantage of short-distance wireless communication, together
When the cost of communication system can also be substantially reduced by the centralization to complex communication equipment.In the prior art, light carries nothing
Line communication technology hair core concept is to use existing wireless technology in cellular network, and communication between base station and central office is then
Using fiber optic communication, and wireless signal is transmitted by being loaded directly into after opto-electronic conversion on light carrier；And light carries radio frequency letter
Number generation principle be usually to produce beat frequency after the laser superposition of two beam different wave lengths, mainly there are four kinds of low noise acousto-optics to carry radio frequency
Generation technology, is based respectively on the physical principle that optical frequency comb, optical feedback return circuit, side touch injection locking and photomixing, and solely
Using produced by these effects light carry radio frequency system all there is shortcoming, cause produce light carry radiofrequency signal be difficult to it is integrated,
Tunable range it is small or produce beat signal line width it is wider.
The content of the invention
The present invention for overcome at least one defect (deficiency) described in above-mentioned prior art there is provided it is a kind of launch line width,
Tranmitting frequency is adjustable, direct modulation and small volume light beat signal transmitting chip, and provides its preparation method.
In order to solve the above technical problems, the technical solution adopted by the present invention is：
A kind of smooth beat signal transmitting chip, including micro-loop laser, multi-mode interference coupler, static distribution formula reaction type
Laser, dynamic modulation distributed Feedback formula laser, output directional coupler and output waveguide and semiconductor transistor elements；By
The common ground electrode of chip back increase, realizes the Injection Current Independent adjustable of device on piece；Described static distribution formula reaction type swashs
Light device and dynamic modulation distributed Feedback formula laser are connected with multi-mode interference coupler, meanwhile, it is distributed anti-at the two
Coplanar metal transmission line is made on feedback formula laser, electric signal is completed and is changed to the directly upper of optical signal, realize the straight of electric signal
Connect modulation and launch；The multi-mode interference coupler, output directional coupler and output waveguide are connected with micro-loop laser；Institute
The semiconductor transistor elements stated are connected with other devices in light beat signal transmitting chip；Wherein, light beat signal transmitting chip profit
The Physical Mechanism into locking and optical feedback return circuit is molded into photomixing, side, the beat signal of a low noise is exported.
In such scheme, the signal that the two distributed Feedback formula lasers are exported is respectively aligned in micro-loop laser
Two lasing longitudinal modes carry out injection locking, then produce phase association by micro-loop laser optical mixing effect, and by micro-loop laser
Backscattering set up optical feedback return circuit, three kinds of Physical Mechanisms are concured, export a low noise beat signal；Together
When, can by change Injection Current or change micro-loop laser two distributed Feedback formula lasers of girth and regulation it is defeated
Go out the different longitudinal modes that wavelength is directed at micro-loop laser, realize the frequency-adjustable of output beat signal.
Further, described micro-loop laser, multi-mode interference coupler, static distribution formula feedback laser, dynamic
Modulation profile formula feedback laser and output waveguide are ridge structure, and wherein ridged platform width range is in 500nm~10mm；
The peripheral extent of described micro-loop laser is in 50mm~5000mm；Described static distribution formula feedback laser and dynamic is adjusted
The screen periods scope of distributed Feedback formula laser processed is in 50nm~10mm, and the coplanar metal transmission line made in the above
Spacing range between signal wire and bottom line is in 5mm~500mm.
Further, dividing in described output waveguide has dielectric material filling, and its thickness range is in 100nm~5mm.
Wherein, the present invention also provides the preparation method of dynamic modulation distributed Feedback formula laser, and this method includes following
Step：
A) epitaxial growth n-type semiconductor layer successively on a semiconductor substrate, MQW active core layer, and p-type are partly led
Body layer；
B) wafer that epitaxial growth is finished is entered successively line mask growth, figure produce, step etching, obtain ridge waveguide,
Peripheral ridged platform and wafer table top；
C) passivation layer and dielectric layer are sequentially depositing on wafer；
D) the spin coating photoresist successively on wafer, exposure, heat backflow, plasma etching prepares electrode contact window；
E) in the enterprising row metal deposition of wafer, transmission line signals electrode, transmission line ground electrode and the back side ground electrode altogether are prepared.
Further, the material of described passivation layer is silica or silicon nitride, is situated between by side's increase over the passivation layer
Matter layer, realizes the planarization of ridged platform so that point transmission has good contact without being broken with semiconductor.
Compared with prior art, the beneficial effects of the invention are as follows：Present invention incorporates single optical feedback return circuit, side be molded into
Locking and the advantage of photomixing technique, by being used in conjunction with for three kinds of technologies, reduce the line width of output signal, improve defeated
Go out the quality of signal；Meanwhile, by making electric transmission line on some distributed Feedback formula laser, electric signal is completed to light
The conversion of signal, realizes the direct modulation and transmitting of electric signal；Therefore, the present invention have transmitting line width, tranmitting frequency is adjustable,
The features such as direct modulation and small volume.
Brief description of the drawings
Fig. 1 is light beat signal transmitting chip overall structure figure of the present invention.
Fig. 2 is the sectional structure chart of dynamic modulation distributed Feedback formula laser of the present invention.
Fig. 3 is the preparation method schematic flow sheet of dynamic modulation distributed Feedback formula laser of the present invention.
Embodiment
Accompanying drawing being given for example only property explanation, it is impossible to be interpreted as the limitation to this patent；It is attached in order to more preferably illustrate the present embodiment
Scheme some parts to have omission, zoom in or out, do not represent the size of actual product；
To those skilled in the art, it is to be appreciated that some known features and its explanation, which may be omitted, in accompanying drawing
's.Technical scheme is described further with reference to the accompanying drawings and examples.
The light beat signal transmitting chip overall structure figure of the present invention including micro-loop laser 1, multimode as shown in figure 1, do
Relate to coupler 2, static distribution formula feedback laser 3, dynamic modulation distributed Feedback formula laser 4, output directional coupler
With output waveguide 5 and semiconductor transistor elements 6；Described static distribution formula feedback laser 3 and dynamic modulation distributed Feedback formula
Laser 4 is connected with multi-mode interference coupler 2；The multi-mode interference coupler 2, output directional coupler and output waveguide 5
It is connected with micro-loop laser 1；Described semiconductor transistor elements 6 are connected with other devices in light beat signal transmitting chip.
Wherein, described micro-loop laser 1, multi-mode interference coupler 2, static distribution formula feedback laser 3, dynamic are adjusted
Distributed Feedback formula laser 4 processed and output waveguide are ridge structure, and wherein ridged platform width range is in 500nm~10mm；
The peripheral extent of described micro-loop laser 1 is in 50mm~5000mm；Described static distribution formula feedback laser 3 and dynamic
The screen periods scope of modulation profile formula feedback laser 4 is in 50nm~10mm, and the coplanar metal made in the above is passed
Spacing range between defeated line and signal wire and bottom line is in 5mm~500mm；Dividing in described output waveguide has dielectric material to fill out
Fill, its thickness range is in 100nm~5mm.
In the present embodiment, by increasing ground electrode altogether in chip back, realize that the Injection Current of device independently may be used on piece
Adjust；Meanwhile, coplanar metal transmission line is made on two distributed Feedback formula lasers, impedance matching is realized on a wide frequency band,
Complete electric signal to change to the directly upper of optical signal, realize the direct modulation and transmitting of electric signal；Meanwhile, the two are distributed anti-
The signal of feedback formula laser output is respectively aligned to two lasing longitudinal modes in micro-loop laser and carries out injection locking, then by micro-loop laser
Device photomixing effect produces phase association, and sets up optical feedback return circuit, three kinds of Physical Mechanisms by the backscattering of micro-loop laser
Concur so that three lasers reach the state locked mutually, two longitudinal mode superpositions for being injected into locking export one
The beat signal of low noise.
Wherein, can be by changing Injection Current or changing two distributed Feedback formulas of girth and regulation of micro-loop laser
The output wavelength of laser is directed at the different longitudinal modes of micro-loop laser, realizes the frequency-adjustable of output beat signal.
The sectional structure chart of dynamic modulation distributed Feedback formula laser in such scheme is as shown in Fig. 2 including dividing
The ridge waveguide 401 of cloth feedback laser, peripheral ridged platform 402, active core layer 403, Semiconductor substrate 404, passivation layer 405,
Dielectric layer 406, transmission line signals electrode 407, transmission line ground electrode 408, the common ground electrode 409 in the back side.
Meanwhile, the preparation method schematic flow sheet of dynamic modulation distributed Feedback formula laser of the invention as shown in figure 3,
Concrete technology step is as follows：
A) epitaxial growth n-type semiconductor layer, MQW active core layer 403, and p successively in Semiconductor substrate 404
Type semiconductor layer；
B) enter line mask growth, figure generation, step etching to the wafer that epitaxial growth is finished successively, obtain ridge waveguide
401st, peripheral ridged platform 402 and wafer table top；
C) passivation layer 405 and dielectric layer 406 are sequentially depositing on wafer；
D) the spin coating photoresist successively on wafer, exposure, heat backflow, plasma etching prepares electrode contact window；
E) in the enterprising row metal deposition of wafer, transmission line signals electrode 407, transmission line ground electrode 408 and the back side are prepared common
Ground electrode 409.
The material of described passivation layer is silica or silicon nitride, by side's increase dielectric layer over the passivation layer, is realized
The planarization of ridged platform, is that electrical transmission has good contact without being broken with semiconductor.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not pair
The restriction of embodiments of the present invention.For those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Any modifications, equivalent substitutions and improvements made within the spirit and principle of invention etc., should be included in the claims in the present invention
Protection domain within.
Claims (8)
1. a kind of smooth beat signal transmitting chip, it is characterised in that including micro-loop laser (1), multi-mode interference coupler (2),
Static distribution formula feedback laser (3), dynamic modulation distributed Feedback formula laser (4), output directional coupler and output
Waveguide (5) and semiconductor transistor elements (6)；Described static distribution formula feedback laser (3) and dynamic modulation distributed Feedback formula
Laser (4) is connected with multi-mode interference coupler (2), meanwhile, make coplanar on the two distributed Feedback formula lasers
Metal transmission line, completes electric signal and is changed to the directly upper of optical signal, realize the direct modulation and transmitting of electric signal；The multimode
Interference coupler (2), output directional coupler and output waveguide (5) are connected with micro-loop laser (1)；Described semiconductor die
First (6) are connected with other devices in light beat signal transmitting chip；
At the light beat signal transmitting chip back side, the common ground electrode of increase, realizes Injection Current Independent adjustable；Light beat signal is launched
Chip is molded into the Physical Mechanism into locking and optical feedback return circuit using photomixing, side, exports the beat signal of a low noise.
2. a kind of smooth beat signal transmitting chip according to claim 1, it is characterised in that described micro-loop laser
(1), multi-mode interference coupler (2), static distribution formula feedback laser (3), dynamic modulation distributed Feedback formula laser (4)
It is ridge structure with output waveguide, wherein ridged platform width range is 500nm~10mm.
3. a kind of smooth beat signal transmitting chip according to claim 1, it is characterised in that described micro-loop laser
(1) peripheral extent is 50mm~5000mm；Described static distribution formula feedback laser (3) and dynamic modulation are distributed anti-
The screen periods scope of feedback formula laser (4) is 50nm~10mm.
4. a kind of smooth beat signal transmitting chip according to claim 1, it is characterised in that described static distribution formula is anti-
Feedback formula laser (3) and dynamic modulation distributed Feedback formula laser (4), the coplanar metal transmission line and letter made in the above
Spacing range number between line and bottom line is 5mm~500mm.
5. a kind of smooth beat signal transmitting chip according to claim 1, it is characterised in that divide in described output waveguide
There is dielectric material filling, its thickness range is 100nm~5mm.
6. a kind of smooth beat signal transmitting chip according to claims 1 to 5, it is characterised in that described photo-beat frequency is believed
Number transmitting chip, two lasings in micro-loop laser (1) are respectively aligned to by the signal of two distributed Feedback formula lasers outputs
Longitudinal mode carries out injection locking, then produces phase association by micro-loop laser (1) photomixing effect, and by micro-loop laser (1)
Backscattering sets up optical feedback return circuit, and three kinds of Physical Mechanisms are concured, and exports the beat signal of a low noise.
7. a kind of preparation method of dynamic modulation distributed Feedback formula laser, it is characterised in that this method comprises the following steps：
A) epitaxial growth n-type semiconductor layer, MQW active core layer (403), and p successively in Semiconductor substrate (404)
Type semiconductor layer；
B) wafer that epitaxial growth is finished is entered successively line mask growth, figure produce, step etching, obtain ridge waveguide (401),
Peripheral ridged platform (402) and wafer table top；
C) passivation layer (405) and dielectric layer (406) are sequentially depositing on wafer；
D) the spin coating photoresist successively on wafer, exposure, heat backflow, plasma etching prepares electrode contact window；
E) in the enterprising row metal deposition of wafer, transmission line signals electrode (407), transmission line ground electrode (408) and the back side are prepared common
Ground electrode (409).
8. preparation method according to claim 7, it is characterised in that the material of described passivation layer (405) is titanium dioxide
Silicon or silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710255672.0A CN107147447A (en) | 2017-04-18 | 2017-04-18 | A kind of smooth beat signal transmitting chip and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710255672.0A CN107147447A (en) | 2017-04-18 | 2017-04-18 | A kind of smooth beat signal transmitting chip and preparation method |
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| CN107147447A true CN107147447A (en) | 2017-09-08 |
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| CN201710255672.0A Pending CN107147447A (en) | 2017-04-18 | 2017-04-18 | A kind of smooth beat signal transmitting chip and preparation method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738701A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院半导体研究所 | Distributed feedback laser and preparation method thereof |
| CN103545711A (en) * | 2013-10-22 | 2014-01-29 | 中国科学院半导体研究所 | Distributed feedback type laser device and manufacturing method thereof |
| CN106505408A (en) * | 2016-11-01 | 2017-03-15 | 北京科技大学 | The optimization method of ridge bar shape semiconductor laser device active area cavity wall passivation |
-
2017
- 2017-04-18 CN CN201710255672.0A patent/CN107147447A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738701A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院半导体研究所 | Distributed feedback laser and preparation method thereof |
| CN103545711A (en) * | 2013-10-22 | 2014-01-29 | 中国科学院半导体研究所 | Distributed feedback type laser device and manufacturing method thereof |
| CN106505408A (en) * | 2016-11-01 | 2017-03-15 | 北京科技大学 | The optimization method of ridge bar shape semiconductor laser device active area cavity wall passivation |
Non-Patent Citations (1)
| Title |
|---|
| NING ZHANG ET AL: ""Optical generation of tunable and narrow linewidth radio frequency signal based on mutual locking between integrated semiconductor lasers"", 《PHOTONICSC RESEARCH》 * |
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