CN107275925A - Laser chip and preparation method thereof, optical module - Google Patents
Laser chip and preparation method thereof, optical module Download PDFInfo
- Publication number
- CN107275925A CN107275925A CN201710638841.9A CN201710638841A CN107275925A CN 107275925 A CN107275925 A CN 107275925A CN 201710638841 A CN201710638841 A CN 201710638841A CN 107275925 A CN107275925 A CN 107275925A
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- grating
- active area
- laser chip
- laser
- luminescence unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The embodiments of the invention provide a kind of laser chip, including substrate, the first active area and the second active area on substrate；Bragg reflection occurs at the first grating for the first grating on the first active area, the light that the first active area is sent；Bragg reflection occurs at the second grating for the second grating on the second active area, the light that the second active area is sent；There is different end face phases after first grating and the not parallel setting of the second grating, cleavage so that the first luminescence unit has different single mode rejection ratio SMSR and yield from the second luminescence unit, and laser chip can be with the more superior luminescence unit of screenability.
Description
Technical field
The application is related to technical field of photo communication, more particularly to a kind of laser chip.The application relates particularly to one simultaneously
The preparation method for planting laser chip.
Background technology
Laser chip is optical-fibre communications, the critical component of data transfer.Laser chip is in actual use, it is necessary to monitor defeated
Go out power, to ensure to transmit signal eye diagram quality.
Edge emitting laser chip is optical-fibre communications, the critical component of data transfer.Due to light pricker transmission low-loss, low dispersion
Need, communication semiconductor laser chip is miscarried using excitation wavelength as 1.3-1 based on 55 microns of indium phosphide laser chip
Product.The laser chip has burial (Buried Heterostucture, BH), two kinds of ridge waveguide (Ridge Waveguide, RW).
Wherein, the distribution feedback laser chip (Distributed Feedback Brag, DFB) is because its single longitudinal mode characteristic, transmission range
It is farther, using more extensive.
DFB laser chip manufacturing process is extremely complex.By taking BH structures as an example, main flow is：Grown quantum trap active area；
Grating is made on SQW, and there is provided wavelength selection function；Regrowth on grating layer；With semi-insulated silica or
Person's silicon nitride does diaphragm, etches active region mesa；Etching the next reverse PN junction of table top both sides growth, there is provided electric current resistance
Gear；Protection film layer is etched away, covering and contact layer is regrowed；Deposition surface protective layer, making metal electrode, thinned, deposit
Backplate；Cleavage, plated film, test, select, encapsulating.
However, in above-mentioned DFB semiconductor laser, a cycle of its grating is generally smaller (about 200 μm), and core
Error when piece is cut is at 5~20 μm, so causing last cycle of grating (near a week of laser cavity surface
Phase) cutting position is uncontrollable, causes the randomness of grating end phase.But, in laser two mould gain inequalities again by
The influence of grating end phase.Therefore, the random change of above-mentioned grating end phase, can cause the gain of two moulds in laser
Difference is unstable, the single longitudinal mode yield of final influence DFB semiconductor laser.
The content of the invention
The invention provides a kind of distributed feedback semiconductor laser chip and preparation method thereof, optical module, to solve DFB half
Grating end phase is uncontrollable in conductor Laser chip, and the single longitudinal mode yield of caused DFB semiconductor laser is low to ask
Topic.
In order to reach object above, the embodiments of the invention provide a kind of laser chip, including substrate, on substrate
First active area and the second active area；The first grating on the first active area, the light that the first active area is sent is in the first light
Bragg reflection occurs at grid；The second grating on the second active area, the light that the second active area is sent is at the second grating
Generation Bragg reflection；There is different end face phases after first grating and the not parallel setting of the second grating, cleavage.
The embodiment of the present invention additionally provides a kind of preparation method of laser chip, including grown quantum trap active area；In amount
Grating is made above sub- trap, two neighboring grating is not parallel to be set；Etch to form the ridge waveguide array of periodic arrangement, ridge ripple
Leading includes active area and grating；Ridge waveguide array is dissociated by one group of unit of two neighboring ridge waveguide.
The embodiment of the present invention additionally provides a kind of optical module, including above-mentioned laser chip.
Compared with prior art, the advantageous effects for the technical scheme that the embodiment of the present invention is proposed include：
In technical scheme provided in an embodiment of the present invention, the first active area and the first grating the first luminescence unit of formation, the
Have not after two active areas and the second grating the second luminescence unit of formation, the first grating and the not parallel setting of the second grating, cleavage
Same end face phase so that the first luminescence unit has different single mode rejection ratio SMSR and yield from the second luminescence unit,
Laser chip can be with the more superior luminescence unit of screenability.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the application, the accompanying drawing used required in being described below to embodiment
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present application, general for this area
For logical technical staff, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the surface texture schematic diagram of semiconductor laser chip in the prior art；
Fig. 2 is laser chip end face phase schematic diagram；
Fig. 3 is a kind of schematic diagram of the laser chip proposed in the application specific embodiment；
Fig. 4 is a kind of phase distribution schematic diagram of the laser chip proposed in the application specific embodiment；
Fig. 5 is phase and single mode rejection ratio graph of a relation；
The exterior view for the inclination twin-guide DFB laser chips that Fig. 6 is proposed by the embodiment of the present invention；
A kind of profile for laser chip that Fig. 7 is proposed by the embodiment of the present invention；
Another profile of a kind of laser chip that Fig. 8 embodiment of the present invention is proposed.
Embodiment
Such as background technology, the single mode yield of existing DFB laser chips is influenceed very big by end face phase, and existing
DFB laser chips design in, single mode probability be all limited to initial phase selection, cause single mode yield not improve, be produced into
Originally it can not reduce.
The embodiment of the present invention proposes a kind of laser chip design, and two are made in the size of an existing laser chip
Luminescence unit, each luminescence unit can work independently, and only each luminescence unit is bad, just will be considered that laser chip not
It is good, can additionally be screened from two luminescence units a performance it is more excellent be used for actual use.This design is not only reduced
Laser chip bad probability, also provides possibility to improve laser chip performance.
Above-mentioned mentality of designing is applied in existing laser chip manufacture craft, due to the limitation of chip fabrication technique,
The chip uniformity produced is higher, does not substantially play the advantage of above-mentioned mentality of designing.
A kind of laser chip provided in an embodiment of the present invention, including substrate；The first active area and second on substrate
Active area；The first grating on the first active area, it is anti-that at the first grating Prague occurs for the light that the first active area is sent
Penetrate；Bragg reflection occurs at the second grating for the second grating on the second active area, the light that the second active area is sent；The
There is different end face phases after one grating and the not parallel setting of the second grating, cleavage.
In actual production making, due to the presence of error, definitely parallel is non-existent, but can not be with due to error
The not parallel scheme caused is equal to the present invention program.Scheme provided in an embodiment of the present invention, its purpose of design is exactly to make not
Parallel scheme, and in the prior art, its purpose of design is to make parallel scheme, and also the embodiment of the present invention is intended to by not
Parallel Design changes the wavelength of luminescence unit, and the change to wavelength is sufficiently large, big to can change the yield of laser chip, this
The change of germplasm not by error band Lai not parallel can realize.
Before the laser chip concrete structure of description the application, the operation principle first to laser chip is introduced.
The wavelength of DFB laser chips depends on the effective refractive index of screen periods and active area and adjacent material.Wavelength has been proportional to
Imitate refractive index and screen periods.When laser chip waveguide and optical grating reflection direction form angle, wavelength will increase.DFB laser
The single mode yield of chip depends on wavelength and optical grating reflection intensity, end phase.If appropriately designed two laser chips
Wavelength difference, under identical end phase and optical grating reflection intensity, single mode yield can get a promotion.
Therefore, the embodiment of the present invention proposes a kind of laser chip, the first grating and the second grating is not parallel sets, by the
One luminescence unit is contrasted with the second luminescence unit, and laser chip waveguide forms angle with optical grating reflection direction, and then is formed
Wavelength difference.
It is convenient for the design of laser chip in specific application scenarios, and construction standard, the 2nd DFB laser chips
Duct width be equal to the first DFB laser chip active areas width.
In the preferred embodiment of the application, two laser chip active areas all employ identical making material, are not required to
Many secondary growth different components active areas are wanted, cost of manufacture is reduced.
Compared with prior art, the advantageous effects for the technical scheme that the embodiment of the present invention is proposed include：
First grating and the second grating is not parallel sets, has different end face phases after cleavage, laser chip waveguide with
Optical grating reflection direction forms angle, and then forms wavelength difference, two luminescence units is had different single modes due to phase difference
Probability, always has one in the bigger position of single mode probability.So as to which when selecting tube core, just performance can be selected more superior
DFB laser chips are encapsulated, and are improved the single mode yield of DFB laser chips, reduce the production cost of DFB laser chips.
Below in conjunction with the accompanying drawing in the application, clear, complete description is carried out to the technical scheme in the application, is shown
So, described embodiment is a part of embodiment of the application, rather than whole embodiments.Based on the implementation in the application
Example, the every other embodiment that those of ordinary skill in the art are obtained on the premise of creative work is not made all belongs to
The scope protected in the application.
As shown in figure 1, being the surface texture schematic diagram of semiconductor laser chip in the prior art.It is active including laser chip
Area 1, electrode 2, forward and backward exiting surface.Grating is square on the active area, and there is provided wavelength selection mechanism.Due to grating end cleavage or
Cutting position is uncontrollable, and the single longitudinal mode yield of laser chip is very big by end face phase effect.In general, single longitudinal mode yield is theoretical
On can reach 50% or so.In actual fabrication, the yield is between 30-40%.
As shown in Fig. 2 being laser chip end face phase schematic diagram, grating 3 is formed in the top of active area 1.P is grating week
Phase, Δ is the cutting position in last cycle, i.e. end phase.End phase is formed when being cleavage.In chip cleavage mistake
Cheng Zhong, cleavage position is unable to reach theoretic absolute precision, and cleavage position has error, and this causes final end phase not
Accurately control.
As shown in figure 3, being a kind of schematic diagram of the laser chip proposed in the application specific embodiment.Wrapped in laser chip
Include in luminescence unit A and luminescence unit B, luminescence unit B is purposely designed to an angle beta.Compared with prior art, existing skill
The structure that luminescence unit A and luminescence unit B are set in art just as.In the application, after the angle of inclination is introduced, cycle, phase are same
When become, comparatively, luminescence unit A does not change.It is bright that this allows for formation gap between luminescence unit A and luminescence unit B
The aobvious characteristics of luminescence.
It is preferred that, the angular range of the first grating and the formation of the second grating is 4 ° to 12 °.
Those skilled in the art can obviously understand, and the wavelength of laser chip depends on screen periods, Yi Jiyou
The refractive index of source region SQW.λ=2n Λ.∧ is screen periods, and n is the effective refractive index of laser chip.
Do not considering grating alignment error ideally, luminescence unit A wavelength is：
λ a=2n Λ a.
And luminescence unit B, due to introducing angle beta, wavelength is changed into：
λ b=2n Λ b=2n Λ a/cos β.
If it is considered that preparing grating technique alignment error is not zero, in Fig. 3 luminescence unit B wavelength as shown in above formula, but
Meanwhile, phase also changes with A.
As shown in figure 4, being a kind of phase distribution schematic diagram of the laser chip proposed in the application specific embodiment.Due to
Luminescence unit B angle of inclination beta, luminescence unit A phase FA and luminescence unit B phase FB is different, so that luminescence unit A and hair
The wavelength that light unit B has is different, and luminescence unit B single modes curve has very big with the statistics yield of phase place change with luminescence unit A
It is different.
The advantage for the technical scheme that the embodiment of the present invention is proposed is that single mode rejection ratio SMSR yields can be luminous single
Relatively the superior selection in first A and luminescence unit B, so, yield is just greatly improved.
It is phase and single mode rejection ratio graph of a relation shown in Fig. 5.As shown in figure 5, with wavelength 203nm and wavelength 205.03nm
Exemplified by, illustrate influence of the out of phase to single mode rejection ratio.
On phase 0-80 degree, SMSR curves, the ＞ wavelength 205.03 of wavelength 203；80-180 degree, 205.03 ＞ of wavelength=ripple
Long 203；180-270 degree, two wavelength are below 35dB and ruling；300-360 degree, the ＞ wavelength 203 of wavelength 205.03.
If a simply laser of wavelength 203, SMSR yields can only be selected in 0-1800 areas, and rough estimate, yield exists
50% or so.
It is an advantage of the present invention that SMSR yields can be in wavelength 203 and wavelength 205.03 relatively the superior selection, this
Sample, yield reforms into 67%.
As shown in fig. 6, the exterior view of the inclination twin-guide DFB laser chips proposed by the embodiment of the present invention.Such as Fig. 6 institutes
Show, laser chip is made using chip growth technique, luminescence unit A and luminescence unit B array is formed on wafer, by one
Luminescence unit A and a luminescence unit B are as one group, to wafer cleavage so as to cut out single laser core in units of group
Piece.
As shown in Figure 7 and Figure 8, a kind of profile of the laser chip proposed by the embodiment of the present invention.Luminescence unit B inclines
Rake angle makes 1 nanometer to 20 nanometers of wavelength conversion, yield is obviously improved in 3-12 degree.In Fig. 8, table top both sides
Reverse PN junction passes through for limiting electric current from active area.
In Fig. 8, isolation channel is used to reduce laser chip reverse leakage current, reduces parasitic capacitance.
Compared with prior art, the advantageous effects for the technical scheme that the embodiment of the present invention is proposed include：
The embodiments of the invention provide a kind of laser chip, by designing two DFB laser included in laser chip
Waveguide angle between chip, realizes that two DFB laser chips, by angle formation wavelength difference, make two DFB laser chips
There is different single mode probabilities due to phase difference, always have one in the bigger position of single mode probability.So as to select tube core
When, the more superior DFB laser chips encapsulation of performance just can be selected, the single mode yield of DFB laser chips is improved, reduces
The production cost of DFB laser chips.
Accordingly, present applicant proposes a kind of preparation method of laser chip, the preparation method comprises the following steps：
Grown quantum trap active area；
Grating is made on SQW, two neighboring grating is not parallel to be set；
Etch to form the ridge waveguide array of periodic arrangement, ridge waveguide includes active area and grating；
Ridge waveguide array is dissociated by one group of unit of two neighboring ridge waveguide.
The structure that laser chip is used is generally ridge waveguide and buried structure waveguide, and wherein ridge waveguide laser chip is typically adopted
Use AIGaInAs SQWs.The characteristics of buried structure waveguide is metal organic chemical vapor deposition (MOCVD) many secondary growths, laser chip
Active area typically uses InGaAsP quantum-well materials, and the quality point of the two is different, in specific application scenarios, can be with
Selected according to actual needs.
It is convenient for the design of laser chip in specific application scenarios, and construction standard, the 2nd DFB laser chips
Duct width be equal to the first DFB laser chip active areas width.
It is preferred that, the first DFB laser chips and the 2nd DFB laser chips use ridge waveguide or buried structure.
In the preferred embodiment of the application, two laser chip active areas all employ identical making material, are not required to
Many secondary growth different components active areas are wanted, cost of manufacture is reduced.
Compared with prior art, the advantageous effects for the technical scheme that the embodiment of the present invention is proposed include：
The embodiments of the invention provide a kind of preparation method of laser chip, by designing included two in laser chip
Waveguide angle between individual DFB laser chips, realizes that two DFB laser chips, by angle formation wavelength difference, make two DFB
Laser chip has different single mode probabilities due to phase difference, always has one in the bigger position of single mode probability.So as to,
When selecting tube core, the more superior DFB laser chips encapsulation of performance just can be selected, the single mode yield of DFB laser chips is obtained
Improve, reduce the production cost of DFB laser chips.
The embodiment of the present invention provides a kind of optical module, including above-mentioned laser chip.
It will be appreciated by those skilled in the art that accompanying drawing is a schematic diagram being preferable to carry out, module or flow in accompanying drawing
Not necessarily necessary to implementation the application.
It will be appreciated by those skilled in the art that implement in device in module can according to implement description be distributed in
In the device of implementation, respective change can also be carried out and be disposed other than in one or more devices of this implementation.Above-mentioned implementation
Module can be merged into a module, can also be further split into multiple submodule.
Above-mentioned the application sequence number is for illustration only, and the quality of implementation is not represented.
Disclosed above is only several specific implementation examples of the application, and still, the application is not limited to this, Ren Heben
What the technical staff in field can think change should all fall into the protection domain of the application.
Claims (6)
1. a kind of laser chip, it is characterised in that including：
Substrate；
The first active area and the second active area on the substrate；
The first grating on first active area, the light that first active area is sent occurs at first grating
Bragg reflection；
The second grating on second active area, the light that second active area is sent occurs at second grating
Bragg reflection；
There is different end face phases after first grating and the not parallel setting of second grating, cleavage.
2. laser chip as claimed in claim 2, it is characterised in that first grating and the folder of second grating formation
Angular region is 4 ° to 12 °.
3. laser chip as claimed in claim 1 or 2, it is characterised in that
The width of first active area is equal to the width of second active area.
4. laser chip as claimed in claim 3, it is characterised in that
The first DFB laser chips use ridge waveguide or buried structure with the 2nd DFB laser chips.
5. a kind of preparation method of laser chip, it is characterised in that comprise the following steps：
Grown quantum trap active area；
Grating is made on the SQW, two neighboring grating is not parallel to be set；
Etch to form the ridge waveguide array of periodic arrangement, ridge waveguide includes the active area and the grating；
The ridge waveguide array is dissociated by one group of unit of two neighboring ridge waveguide.
6. a kind of optical module, it is characterised in that including any described laser chips of claim 1-4.
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| CN201710638841.9A CN107275925A (en) | 2017-07-31 | 2017-07-31 | Laser chip and preparation method thereof, optical module |
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| CN201710638841.9A CN107275925A (en) | 2017-07-31 | 2017-07-31 | Laser chip and preparation method thereof, optical module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113424378A (en) * | 2019-02-14 | 2021-09-21 | 古河电气工业株式会社 | Semiconductor optical integrated element |
| CN113508502A (en) * | 2019-03-12 | 2021-10-15 | 华为技术有限公司 | Double-cavity DFB laser chip, light emitting assembly, optical module and optical network device |
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| CN203205703U (en) * | 2013-03-29 | 2013-09-18 | 山东浪潮华光光电子股份有限公司 | GaN-based blue-green laser diode device |
| CN106300017A (en) * | 2016-09-07 | 2017-01-04 | 华中科技大学 | Multi-wavelength distributed feedback ridge waveguide semiconductor laser array and application |
| CN106785914A (en) * | 2017-03-22 | 2017-05-31 | 青岛海信宽带多媒体技术有限公司 | Semiconductor laser chip and semicondcutor laser unit |
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| US5325392A (en) * | 1992-03-06 | 1994-06-28 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
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| CN113508502A (en) * | 2019-03-12 | 2021-10-15 | 华为技术有限公司 | Double-cavity DFB laser chip, light emitting assembly, optical module and optical network device |
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