CN106953235A - Single mode GaSb base semiconductor lasers and preparation method thereof - Google Patents

Single mode GaSb base semiconductor lasers and preparation method thereof Download PDF

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Publication number
CN106953235A
CN106953235A CN201610152882.2A CN201610152882A CN106953235A CN 106953235 A CN106953235 A CN 106953235A CN 201610152882 A CN201610152882 A CN 201610152882A CN 106953235 A CN106953235 A CN 106953235A
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layer
type
gasb
upper limiting
single mode
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杨成奥
张宇
廖永平
徐应强
牛智川
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A kind of single mode GaSb base semiconductor lasers, including N-type GaSb substrates and epitaxial layer, the epitaxial layer includes the upper ducting layer on lower waveguide layer, lower waveguide layer, cushion in the p-type on p-type upper limiting layer and p-type upper limiting layer on upper ducting layer, wherein, etched downwards from cushion in the p-type in the subregion of the epitaxial layer, etching depth is located between the supreme ducting layer lower surface in p-type upper limiting layer upper surface, a ridge waveguide structure that centre is high, both sides are low of formation；And in the subregion of p-type upper limiting layer, further etching forms periodic to the ridge waveguide structure downwards.Additionally provide a kind of preparation method of the single mode GaSb base semiconductor lasers of side-coupled grating.By the specific optical grating construction, reduce because the problem of Material growth such as secondary epitaxy is complicated caused by grating is made, while it is possible to prevente effectively from the problem of oxidation of aluminium.

Description

Single mode GaSb base semiconductor lasers and preparation method thereof
Technical field
The present invention relates to a kind of semiconductor laser, particularly relate to a kind of single mode GaSb base semiconductors and swash Light device and preparation method thereof.
Background technology
2-5 mu m wavebands include very important atmospheric window, contain the feature of many gas molecules Spectral line, can be widely applied to the civilian projects such as air monitoring, gas detection；And it is operated in this The high power laser of wave band can be expected to play more preferable in the military project such as laser radar, photoelectronic warfare Application effect.Traditional Si bases, GaAs (GaAs) sill band gap are relatively wide, it is impossible to full Requirement of the foot to wavelength.And the band gap of GaSb (gallium antimonide) material relative narrower have it is inborn excellent Gesture, but the F-P cavity semiconductor laser of ordinary construction is generally multimode operation, the meeting in High Speed Modulation Generation spectrum widening effect.Development and environmental monitoring demand precision with high-speed optical fiber telecommunications system Raising, all noise spectra of semiconductor lasers propose higher requirement.Development breadth of spectrum line is narrower, lasing Wavelength is more stablized, powerful GaSb lasers turn into the developing weight of semiconductor laser Want direction.
Traditional method for realizing that single longitudinal mode is Wavelength stabilized is distributed feedback laser (DFB) structure, The interruption of growth i.e. after the complete Quantum well active district of epitaxial growth or ducting layer, is exposed by double-beam holographic Light or electron-beam direct writing introduce periodic Bragg grating near active area and light are fed back, Then carry out secondary epitaxy and complete the whole extension preparation for burying grating DFB.But for GaSb bases The problem of easy oxidation that high aluminium component in material, its ducting layer and limiting layer is brought, is so that traditional The manufacture difficulty for burying grating DFB is very big.
The content of the invention
The invention aims to design a kind of single mode GaSb base semiconductor lasers, to overcome The deficiency of traditional DFB techniques.
In order to solve the above technical problems, the present invention provides a kind of single mode GaSb base semiconductor lasers, Including N-type GaSb substrates and epitaxial layer, the epitaxial layer includes lower waveguide layer, on lower waveguide layer Upper ducting layer, the p-type upper limiting layer on upper ducting layer and the p-type on p-type upper limiting layer Upper cushion, wherein,
Etched downwards from cushion in the p-type in the subregion of the epitaxial layer, etching depth position Between the supreme ducting layer lower surface in p-type upper limiting layer upper surface, a centre height of formation, both sides are low Ridge waveguide structure；And
In the subregion of p-type upper limiting layer, further etching forms week to the ridge waveguide structure downwards Phase property grating.
According to a kind of specific embodiment of the present invention, the depth of the ridge waveguide etching is positioned at described Between the upper and lower surface of p-type upper limiting layer.
According to a kind of specific embodiment of the present invention,：The μ of width 1 of ridge waveguide structure center spine M-200 μm, 800 μm of -2mm of length.
According to a kind of specific embodiment of the present invention, the epitaxial layer also includes lower waveguide layer, lower ripple Upper ducting layer on conducting shell, the upper ducting layer is located under the p-type upper limiting layer, the week The cycle of phase property grating calculates according to below equation：
In formula (1), λ is the excitation wavelength of the laser, NeffFor from lower waveguide layer to upper ripple The pattern effective refractive index for the active area that conducting shell is constituted, m is spectrum line series, m=1 or 2；Light Grid dutycycle is 0.5-0.7.
According to a kind of specific embodiment of the present invention, the periodic cycle is 500nm-650nm, Dutycycle is 0.5-0.7.
Moreover, the present invention also provides a kind of preparation method of single mode GaSb base semiconductor lasers, wrap Include following steps：
(1) N-type GaSb substrates are prepared；
(2) deposit epitaxial layers on substrate, the epitaxial layer include lower waveguide layer, lower waveguide layer it On upper ducting layer, the p-type upper limiting layer on upper ducting layer and the P on p-type upper limiting layer Cushion in type；
(3) etched downwards on the subregion of the p-type cushion, etching depth is located at p-type Between the supreme ducting layer lower surface in upper limiting layer upper surface, the low ridge ripple in high, both sides in the middle of one is formed Guide structure；
(4) using double-beam holographic exposure technique simultaneously on the surface of ridge waveguide structure and both sides edge Laterally exposure forms multiple optical grating constructions of period profile, and downward etched diffraction grating reaches upper ducting layer table Face, forms periodic.
According to a kind of specific embodiment of the present invention, in the above method, the ridge waveguide etching Depth is located between the upper and lower surface of p-type upper limiting layer, and more than supreme ducting layer lower surface Any depth；1 μm -200 μm of the width of ridge waveguide structure center spine, 800 μm of -2mm of length.
According to a kind of specific embodiment of the present invention, in the above method, the periodic interval For 500nm-650nm, dutycycle is 0.5-0.7；The quantity of ridge waveguide both sides periodic is 1400-2600.
According to a kind of specific embodiment of the present invention, in the above method, the p-type upper limiting layer is The aluminum gallium arsenide antimony material of p-type doping, its component ratio is Al0.4-0.9GaAs0.02-0.04Sb, thickness is 300nm-2μm。
According to a kind of specific embodiment of the present invention, in the above method, the p-type cushion is P The gallium antimony material of type doping.
By above-mentioned technical proposal, single mode GaSb base semiconductor lasers of the present invention and preparation method thereof Beneficial effect be：
(1) optical grating construction is located at the both sides of ridge waveguide structure, and grating is formed by etching downwards, It can reduce because the problem of Material growth such as secondary epitaxy is complicated caused by grating is made, while can To be prevented effectively from the problem of oxidation of aluminium；
(2) method exposed using double-beam holographic prepares grating, because total is in close proximity to ridge The downward etched diffraction grating of limiting layer to the ducting layer on type waveguiding structure both sides forms side-coupled optical grating construction； Overcome the deficiency of traditional DFB techniques so that epitaxial structure can be turn avoid with a secondary growth The problem of etching depth is larger when abutment wall grating is prepared on ridge waveguide.
(3) method exposed using common photoetching and double-beam holographic prepares ridge waveguide and lateral coupling Close DFB gratings and avoid in electron-beam direct writing grating that coherent area movement size is small, it is difficult to prepare chamber length compared with The problem of long laser, technique is simpler, and cost is lower, reliability and high yield rate,
(4) etch-protecting layer is passed through so that when double-beam holographic exposure prepares grating, ridge ripple Lead and be effectively protected, single is obtained to the coupling modeling effect of light by lateral Bragg grating The laser of the smaller line width of mould；
(5) while present invention employs wider ridge waveguide structure and longer laser chamber are long, Result in more powerful, wavelength is more stable, the smaller new GaSb semiconductor lasers of line width；
(6) are set into 500nm-650nm dutycycles the periodic cycle of ridge waveguide both sides to set For 0.5-0.7, make lateral grating using injection region outside evanscent field carried with the coupling of lateral grating For pattern screening, the line width of laser is reduced, it is ensured that single longitudinal mode operation.
(7) by using ridge waveguide and optical grating construction, it is to avoid in traditional burial optical grating construction The problem of secondary epitaxy growth difficulty that high aluminium component is brought is big, turn avoid and prepared on ridge waveguide The problem of etching depth is larger during abutment wall grating.
Brief description of the drawings
Fig. 1 is the structural representation of first embodiment of the invention semiconductor laser；
Fig. 2 is the sectional view of first embodiment of the invention semiconductor laser；
Fig. 3 is the side view of first embodiment of the invention semiconductor laser.
Description of reference numerals：
1--N type GaSb substrates
2--N type GaSb bottom breakers
3--N type AlGaAsSb lower limit layers
4-- undoped AlGaAsSb lower waveguide layers
Barrier layer under 5-- undoped AlGaAsSb
6-- undoped SQWs
Barrier layer on 7-- undoped AlGaAsSb
Ducting layer on 8-- undoped types AlGaAsSb
9--P type AlGaAsSb upper limiting layers
Cushion on 10--P types GaSb
11--SiNxEtch-protecting layer
Embodiment
" on ", " under ", " interior " in the present invention, " outer " are only used for relative reference plane and represent each Relative position relation between layer, be not used in represent in practice up and down and internal and external relation, actual member device Part can positive sequence be installed according to specific needs or inverted order is installed.Moreover, " on " and " under " table Show and contacted between destination layer and noncontact.For example, the upper ducting layer on lower waveguide layer, refers to Ducting layer also leads to on lower waveguide layer, can directly be contacted between two layers, or between them Other layers are crossed to separate.
It should be noted that the implementation for not illustrating or describing in accompanying drawing, in being art Form known to a person of ordinary skill in the art.In addition, though showing for the parameter comprising particular value can be provided herein Model, it is to be understood that parameter is without being definitely equal to corresponding value, but can be in acceptable error margin Or it is similar to corresponding value in design constraint.In addition, the direction term mentioned in the present invention, is only ginseng Examine the direction of accompanying drawing.Therefore, the direction term used is for illustrating not to be used for limiting the present invention.
The present invention provides a kind of single mode GaSb base semiconductor lasers, including N-type GaSb substrates and Epitaxial layer, the epitaxial layer includes the upper ducting layer on lower waveguide layer, lower waveguide layer, upper ducting layer On p-type upper limiting layer and p-type on p-type upper limiting layer on cushion, wherein：
In the subregion of the epitaxial layer, cushion is etched downwards from p-type, and etching depth is located at p Between the supreme ducting layer lower surface in type upper limiting layer upper surface, the low ridge in high, both sides in the middle of one is formed Waveguiding structure；And
The ridge waveguide structure further etches downwards what is formed in the subregion of p-type upper limiting layer Periodic.
For the selection of periodic, it is preferred that the shown cycle (interval between grating and grating Distance) meet equation below：
In formula (1), λ is the excitation wavelength of the laser, NeffFor from lower waveguide layer to upper ripple The pattern effective refractive index for the active area that conducting shell is constituted, m is spectrum line series, m=1 or 2；Light Grid dutycycle is 0.5-0.7.
It is also preferred that the periodic cycle is 500nm-650nm, dutycycle is 0.5-0.7.Compared with Long laser chamber length and wider ridge waveguide structure are conducive to improving the power output of laser.Its In to be distributed in periodic cycles of ridge waveguide both sides be that 500nm-650nm dutycycles are 0.5-0.7.Lateral grating using injection region outside evanscent field provide mould with the coupling of lateral grating Formula is screened, and reduces the line width of laser, it is ensured that single longitudinal mode operation.Wherein vallum both sides periodic Quantity be 1400-2600.
For the structure of ridge waveguide, the depth of the ridge waveguide etching, which is located in the p-type, to be limited Between the upper and lower surface of layer, it is preferred that the width of ridge waveguide structure center spine is 1 μm -200 μm, length is 800 μm of -2mm.
For the material and thickness with p-type upper limiting layer, it is preferred that p-type upper limiting layer is mixed for p-type Miscellaneous aluminum gallium arsenide antimony material, its component ratio is Al0.5-0.9GaAs0.02-0.04Sb, thickness is 300nm-2 μm。
The epitaxial layer also include N-type bottom breaker, N-type lower limit layer, lower waveguide layer, lower barrier layer, Quantum well layer, upper barrier layer, upper ducting layer and etch-protecting layer.It is preferred that, epitaxial layer includes N-type weight Contact layer, the AlGaAsSb lower limit layers of n-type doping, the lower ripple of undoped under the GaSb of doping Barrier layer, the quantum well layer of undoped, the AlGaAsSb of undoped under conducting shell, the AlGaAsSb of undoped Ducting layer in upper barrier layer, the AlGaAsSb of undoped, the AlGaAsSb upper limiting layers of p-type doping, The GaSb contact layers of p-type doping.SiN etch-protecting layers, wherein quantum well layer can include 1-3 SQW.
The present invention a preferred preparation method embodiment be：
A kind of preparation method of single mode GaSb base semiconductor lasers, comprises the following steps：
Step 1：Take a gallium antimony substrate；
Step 2：N-type bottom breaker, N-type lower limit layer, lower ripple are sequentially prepared on gallium antimony substrate Conducting shell, lower barrier layer, quantum well layer, upper barrier layer, upper ducting layer, p-type upper limiting layer, p-type buffering Layer, etch-protecting layer；
Step 3：Using photoetching technique, the mask pattern of etching is prepared on the surface of etch-protecting layer；
Step 4：Etched downwards on p-type cushion, etching depth reaches p-type upper limiting layer, shape Into ridge waveguide structure,
Step 5：Using double-beam holographic exposure technique simultaneously on the surface and both sides of ridge waveguide structure The etched diffraction grating structure of multiple period profiles is formed along longitudinal direction etching, etching reaches ducting layer table downwards Face, completes the preparation of device.
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific reality Example is applied, and referring to the drawings, the present invention is described in further detail.
First embodiment
Substrate 1 is (100) face N-type gallium antimony material.
Epitaxial layer includes：Contact layer 2, the AlGaAsSb of n-type doping under the GaSb of N-type heavy doping Barrier layer 5, undoped under lower limit layer 3, the lower waveguide layer 4 of undoped, the AlGaAsSb of undoped Quantum well layer 6, barrier layer 7 on the AlGaAsSb of undoped, waveguide on the AlGaAsSb of undoped Layer 8, the AlGaAsSb upper limiting layers 9 of p-type doping, the GaSb contact layers 10 of p-type doping.SiN Etch-protecting layer 11, wherein quantum well layer can include 1-3 SQW.
The easy shape in AlGaAsSb lower waveguide layers interface of N-type AlGaAsSb lower limit layers and undoped Into high-quality hetero-junctions, interface number is reduced, reduction interfacial state is combined caused by fuel factor and heated up, So as to improve the reliability of laser.Upper ducting layer and upper limiting layer are readily obtained for aluminum gallium arsenide antimony material High-quality epitaxial material, so as to improve the epitaxial wafer yield rate of laser.
The GaSb contact layers 10 of p-type doping can form good Ohmic contact with TiPtAu, drop The internal resistance of low laser.
It refer in Fig. 1-3, the present embodiment, the top section quilt of p-type AlGaAsSb upper limiting layers 9 Etching forms ridge waveguide.Those skilled in the art should clear enough, the depth of the etching can be Below the upper surface of p-type AlGaAsSb upper limiting layers 9, and waveguide on the AlGaAsSb of undoped Any depth more than layer lower surface.Generally, the depth H of the ridge waveguide between Between 0.5 μm -2 μm, total width is between 1 μm -200 μm.
The structural representation of first embodiment of the invention semiconductor laser as shown in Figure 1.Periodically Lateral grating be located at middle part bar shaped ridge waveguide both sides, it is symmetrical, along genesis analysis, in order that Obtain lateral grating and effectively play a part of Coupled Feedback, it is necessary to which the feedback wavelength for the grating for being is required Near the wavelength (2 μm -3 μm) wanted, this numerical value also connects with the material gain peak wavelength of active area Closely.Wherein, described side-coupled screen periods are calculated according to below equation
In formula (1), λ is distributed feedback laser excitation wavelength, NeffTo be supreme from lower waveguide layer The pattern effective refractive index for the active area that ducting layer is constituted.M is spectrum line series (m=1 or 2), Grating dutycycle is between 0.5-0.7.
So far, the Wavelength stabilized high-power side-coupled distributed feed-back of GaSb bases of the present embodiment single mode is partly led Body laser introduction is finished.
Second embodiment
In another embodiment of the present invention, a kind of preparation method of above-mentioned laser is additionally provided. The preparation method includes：
Step 1,500nm N-type GaSb cushions, 1500nm is deposited respectively on GaSb substrates AlGaAsSb lower limit layers, 300nm undoped AlGaAsSb lower waveguide layers, 10-100nm Barrier layer under the AlGaAsSb of undoped, 5-15nm quantum well layer, 10-100nm undoped Ducting layer, 1500nm P in the upper barrier layer of AlGaAsSb, the AlGaAsSb of 300nm undoped The GaSb contact layers of the p-type doping of the AlGaAsSb of type doping upper limiting layer, 500nm.250nm SiN etch-protecting layers
Step 2, ridge waveguide is being prepared described in step 1 on structural material, the step further comprises：
Sub-step 2-1, photoresist is coated on SiN etch-protecting layers surface, with common contact light The method at quarter, mask is done with photolithography plate, carves slab waveguide figure
Sub-step 2-2, with photoresist ridge waveguide do mask, with inductively coupled plasma (ICP) Method is performed etching to structural material, so that original ridge waveguide is obtained in structural material upper surface, Etching depth is 1.5 μm.The ridge waveguide width is 50 μm, and length is 1mm.
Step 3, the method exposed using double-beam holographic, the ridge waveguide both sides prepared in step 2 Etching forms side-coupled grating, and screen periods are 650nm, and dutycycle is 0.5.Grating length is 500μm。
Step 4, the holographic exposure photoresist obtained with step 3 as mask, with inductive etc. from Daughter method is performed etching to structural material, etching depth 500nm.
It should be noted that red in the high-power side-coupled distributed feed-back of GaSb bases of the single mode narrow linewidth Outer semiconductor laser and preparation method thereof has also needed to upper/lower electrode preparation, and device is thinned, cleavage etc. Multiple techniques, it is not the emphasis place of the present invention, and here is omitted.
So far, it is infrared in the high-power side-coupled distributed feed-back of GaSb bases of the present embodiment single mode narrow linewidth Semiconductor laser and preparation method thereof is introduced and finished.According to this description, those skilled in the art should There is clear accurately understanding to the present invention.
In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various Concrete structure or shape, one of ordinary skill in the art can carry out simply well known replace to it Change, for example：
Inductively coupled plasma (ICP) can also be substituted with reactive ion etching (RIE) method； SiNxEtch-protecting layer can be substituted with SiO2.
In summary, the invention provides a kind of side-coupled point of the high-power GaSb bases of single mode narrow linewidth Infrared semiconductor laser and preparation method thereof in cloth feedback.Optical grating construction is located at ridge in the laser The both sides of waveguiding structure, etching, can reduce because making secondary epitaxy etc. caused by grating downwards The problem of Material growth is complicated, while it is possible to prevente effectively from the problem of oxidation of aluminium, greatly improves laser Reliability, while the introducing of etch-protecting layer allow holographic exposure make grating when it is effective Ridge waveguide is protected, the purpose for making constituency grating is reached.
Particular embodiments described above, is carried out to the purpose of the present invention, technical scheme and beneficial effect It is further described, it should be understood that the foregoing is only the specific embodiment of the present invention, It is not intended to limit the invention, within the spirit and principles of the invention, any modification for being made, Equivalent, improvement etc., should be included within the scope of the present invention.

Claims (10)

1. a kind of single mode GaSb base semiconductor lasers, including N-type GaSb substrates and epitaxial layer, The epitaxial layer includes the p on the upper ducting layer on lower waveguide layer, lower waveguide layer, upper ducting layer Cushion in p-type on type upper limiting layer and p-type upper limiting layer, it is characterised in that：
Etched downwards from cushion in the p-type in the subregion of the epitaxial layer, etching depth position Between the supreme ducting layer lower surface in p-type upper limiting layer upper surface, a centre height of formation, both sides are low Ridge waveguide structure；And
In the subregion of p-type upper limiting layer, further etching forms week to the ridge waveguide structure downwards Phase property grating.
2. single mode GaSb base semiconductor lasers according to claim 1, it is characterised in that： The ridge waveguide etching depth is located between the upper and lower surface of the upper ducting layer.
3. single mode GaSb base semiconductor lasers according to claim 1, it is characterised in that： 1 μm -200 μm of the width of ridge waveguide structure center spine, 800 μm of -2mm of length.
4. the single mode GaSb base semiconductor lasers of side-coupled grating according to claim 1, It is characterized in that：The epitaxial layer is also including the upper ducting layer on lower waveguide layer, lower waveguide layer, institute Ducting layer is stated under the p-type upper limiting layer；The cycle of the periodic is according to following Formula is calculated：
Λ = m λ 2 N e f f - - - ( 1 )
In formula (1), λ is the excitation wavelength of the laser, NeffFor from lower waveguide layer to upper ripple The pattern effective refractive index for the active area that conducting shell is constituted, m is spectrum line series, m=1 or 2；Light Grid dutycycle is 0.5-0.7.
5. single mode GaSb base semiconductor lasers according to claim 4, it is characterised in that： The periodic cycle is 500nm-650nm, and dutycycle is 0.5-0.7.
6. a kind of preparation method of single mode GaSb base semiconductor lasers, it is characterised in that including as follows Step：
(1) N-type GaSb substrates are prepared；
(2) deposit epitaxial layers on substrate, the epitaxial layer include lower waveguide layer, lower waveguide layer it On upper ducting layer, the p-type upper limiting layer on upper ducting layer and the P on p-type upper limiting layer Cushion in type；
(3) etched downwards on the subregion of the p-type cushion, etching depth is located at p-type Between the supreme ducting layer lower surface in upper limiting layer upper surface, the low ridge ripple in high, both sides in the middle of one is formed Guide structure；
(4) using double-beam holographic exposure technique simultaneously on the surface of ridge waveguide structure and both sides edge Laterally exposure forms multiple optical grating constructions of period profile, and downward etched diffraction grating reaches upper ducting layer table Face, forms periodic.
7. preparation method according to claim 6, it is characterised in that：The ridge waveguide is carved The depth of erosion is located between the upper and lower surface of p-type upper limiting layer；The width of ridge waveguide structure center spine 1 μm -200 μm, 800 μm of -2mm of length.
8. preparation method according to claim 6, it is characterised in that：The periodic Cycle is 500nm-650nm, and dutycycle is 0.5-0.7；The quantity of ridge waveguide both sides periodic For 1400-2600.
9. preparation method according to claim 6, it is characterised in that：Limited in the p-type The aluminum gallium arsenide antimony material that layer adulterates for p-type, its component ratio is Al0.4-0.9GaAs0.02-0.04Sb, thickness For 300nm-2 μm.
10. preparation method according to claim 6, it is characterised in that：The p-type cushion The gallium antimony material adulterated for p-type.
CN201610152882.2A 2016-03-17 2016-03-17 Single mode GaSb base semiconductor lasers and preparation method thereof Pending CN106953235A (en)

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CN109412015A (en) * 2018-11-23 2019-03-01 中国科学院半导体研究所 Single spatial mode low divergence narrow linewidth composite photonic crystal laser
CN109672083A (en) * 2017-10-17 2019-04-23 光环科技股份有限公司 Distributed feedback laser structure and production method
CN110611244A (en) * 2019-09-20 2019-12-24 中国科学院半导体研究所 Method for preparing single-mode gallium arsenide-based quantum dot laser
CN111262130A (en) * 2020-03-10 2020-06-09 常州纵慧芯光半导体科技有限公司 Laser structure and preparation method and application thereof
CN111342341A (en) * 2020-03-10 2020-06-26 常州纵慧芯光半导体科技有限公司 Laser structure and preparation method and application thereof
CN111370995A (en) * 2020-03-12 2020-07-03 中国科学院半导体研究所 Surface grating semiconductor laser and manufacturing method thereof
WO2020151290A1 (en) * 2019-01-22 2020-07-30 中国科学院半导体研究所 On-chip integrated semiconductor laser structure and manufacturing method thereof
CN111679529A (en) * 2020-07-28 2020-09-18 哈尔滨工业大学（深圳） Long-distance sub-wavelength grating structure for optical phased array emission unit
CN112467518A (en) * 2020-11-27 2021-03-09 因林光电科技(苏州)有限公司 Semiconductor laser and preparation method thereof
CN112688164A (en) * 2020-12-24 2021-04-20 中国科学院半导体研究所 Lateral composite grating DFB laser structure and application
WO2021102722A1 (en) * 2019-11-25 2021-06-03 江苏华兴激光科技有限公司 Single-longitudinal-mode edge-emitting laser with side grating oxidation-confinement structure, and preparation method therefor
CN114039274A (en) * 2021-10-18 2022-02-11 长春理工大学 Lateral coupling distributed feedback laser with narrow groove structure and preparation method thereof
CN115799991A (en) * 2023-01-06 2023-03-14 深圳市星汉激光科技股份有限公司 Laser chip of discrete side wall grating and preparation method

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CN109672083A (en) * 2017-10-17 2019-04-23 光环科技股份有限公司 Distributed feedback laser structure and production method
CN108054634B (en) * 2018-01-03 2020-12-22 长春理工大学 Narrow linewidth semiconductor laser
CN108054634A (en) * 2018-01-03 2018-05-18 长春理工大学 A kind of narrow linewidth semiconductor laser
CN109412015A (en) * 2018-11-23 2019-03-01 中国科学院半导体研究所 Single spatial mode low divergence narrow linewidth composite photonic crystal laser
WO2020151290A1 (en) * 2019-01-22 2020-07-30 中国科学院半导体研究所 On-chip integrated semiconductor laser structure and manufacturing method thereof
CN110611244A (en) * 2019-09-20 2019-12-24 中国科学院半导体研究所 Method for preparing single-mode gallium arsenide-based quantum dot laser
CN110611244B (en) * 2019-09-20 2021-05-18 中国科学院半导体研究所 Method for preparing single-mode gallium arsenide-based quantum dot laser
WO2021102722A1 (en) * 2019-11-25 2021-06-03 江苏华兴激光科技有限公司 Single-longitudinal-mode edge-emitting laser with side grating oxidation-confinement structure, and preparation method therefor
CN111342341B (en) * 2020-03-10 2022-02-01 常州纵慧芯光半导体科技有限公司 Laser structure and preparation method and application thereof
CN111342341A (en) * 2020-03-10 2020-06-26 常州纵慧芯光半导体科技有限公司 Laser structure and preparation method and application thereof
CN111262130A (en) * 2020-03-10 2020-06-09 常州纵慧芯光半导体科技有限公司 Laser structure and preparation method and application thereof
CN111262130B (en) * 2020-03-10 2022-04-19 常州纵慧芯光半导体科技有限公司 Laser structure and preparation method and application thereof
CN111370995A (en) * 2020-03-12 2020-07-03 中国科学院半导体研究所 Surface grating semiconductor laser and manufacturing method thereof
CN111370995B (en) * 2020-03-12 2021-05-18 中国科学院半导体研究所 Surface grating semiconductor laser and manufacturing method thereof
CN111679529A (en) * 2020-07-28 2020-09-18 哈尔滨工业大学（深圳） Long-distance sub-wavelength grating structure for optical phased array emission unit
CN112467518A (en) * 2020-11-27 2021-03-09 因林光电科技(苏州)有限公司 Semiconductor laser and preparation method thereof
CN112688164A (en) * 2020-12-24 2021-04-20 中国科学院半导体研究所 Lateral composite grating DFB laser structure and application
CN114039274A (en) * 2021-10-18 2022-02-11 长春理工大学 Lateral coupling distributed feedback laser with narrow groove structure and preparation method thereof
CN114039274B (en) * 2021-10-18 2023-12-19 长春理工大学 Lateral coupling distributed feedback laser with narrow groove structure and preparation method thereof
CN115799991A (en) * 2023-01-06 2023-03-14 深圳市星汉激光科技股份有限公司 Laser chip of discrete side wall grating and preparation method

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