CN103545711B - Distributed feedback laser and preparation method thereof - Google Patents
Distributed feedback laser and preparation method thereof Download PDFInfo
- Publication number
- CN103545711B CN103545711B CN201310498595.3A CN201310498595A CN103545711B CN 103545711 B CN103545711 B CN 103545711B CN 201310498595 A CN201310498595 A CN 201310498595A CN 103545711 B CN103545711 B CN 103545711B
- Authority
- CN
- China
- Prior art keywords
- layer
- distributed feedback
- feedback laser
- algaas
- ridge waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention provides a kind of distributed feedback laser and preparation method thereof.This distributed feedback laser comprises: N-type GaAs substrate; And be deposited on N-type GaAs resilient coating on N-type GaAs substrate, N-type AlGaAs lower limit layer, active area, P type AlGaAs upper limiting layer successively.Wherein, through etching formation, it at least has the ridge waveguide of abutment wall grating in side to P type AlGaAs upper limiting layer.In distributed feedback laser of the present invention, owing to grating to be etched in the side of ridge waveguide, thus can all layers of disposable extension, AlGaAs material can not expose in atmosphere, thus Al problem of oxidation can not be produced, and then effectively can improve power and the life-span of laser.
Description
Technical field
The present invention relates to semiconductor laser field, particularly relate to a kind of distributed feedback laser and preparation method thereof.
Background technology
In recent years, the development of China's Ferrous Metallurgy, Aero-Space, petrochemical industry, cement, electric power and biochemical pharmacy is swift and violent, but because these Industrial Resources consumption are large, disposal of pollutants is high, so energy-saving and emission-reduction just become an important and pressing task.O
2it is most important combustion-supporting gas in industrial production combustion process, carry out accurate on line real-time monitoring and feedback fast to it to control, not only can Optimizing Combustion process, reduce energy consumption and pollution, and the combustion efficiency of entire system can be improved, not only to enhancing productivity, product quality and keep the safety in production significant, and become one of energy-saving and emission-reduction and the important means carrying out low-carbon economy.Output of laser centre wavelength is the detection of gas of distributed feedback laser at oxygen of 760nm, medical field has this application widely and the market demand.760nm light source as oxygen gas detection must have narrow live width and stable characteristic.
Figure 1A is the stereogram of prior art distributed feedback laser; Figure 1B is the generalized section of distributed feedback laser shown in Figure 1A.Please refer to Figure 1A and Figure 1B, the preparation process of this distributed feedback laser comprises:
Steps A ', via first time extension, deposited n-type GaAs resilient coating 2, N-type AlGaAs lower limit layer 3, active area and undoped AlGaAs layer successively on N-type GaAs substrate 1, wherein, this active area comprises: ducting layer 8 on barrier layer 7, undoped AlGaAs on barrier layer 5, quantum well layer 6, undoped AlGaAs under undoped AlGaAs lower waveguide layer 4, undoped AlGaAs;
Step B ', makes plane grating through holographic exposure on undoped AlGaAs layer, forms undoped AlGaAs grating layer A;
Step C ', secondary epitaxy on prepared undoped AlGaAs grating layer, generates P type AlGaAs upper limiting layer 9;
Step D ', at both sides, the middle part etching groove of this distributed feedback laser, in the middle of two grooves, form ridge waveguide, wherein, the degree of depth of groove is to ducting layer on undoped AlGaAs 8 (at least to AlGaAs upper limiting layer 9, barrier layer 7 to as many as undoped AlGaAs);
Step e ', at least above the ridge waveguide after etching, make contact electrode layer 11.
Visible, when preparing the distributed feedback laser shown in Figure 1A and Figure 1B, need to carry out twice epitaxy technique.In the middle of twice epitaxy technique, undoped AlGaAs layer makes in grating process, the AlGaAs material of undoped AlGaAs layer exposes in atmosphere, is easy to produce aluminum oxidation and produce defect problem, thus the power of restriction laser and life-span.
In the prior art, in order to avoid the oxidation of AlGaAs, can adopt if InGaP etc. is containing aluminium, and the more stable grating material being not easy to be oxidized in atmosphere.Although the method effectively can reduce the problem of oxidation of Al, owing to still adopting twice material epitaxy, thus it is complicated to cause this technical scheme to make, and cost is high, is difficult to promote in production practices.
Summary of the invention
(1) technical problem that will solve
In view of above-mentioned technical problem, the invention provides a kind of distributed feedback laser and preparation method thereof, to overcome the problem of aluminum oxidation in grating preparation process.
(2) technical scheme
According to an aspect of the present invention, a kind of distributed feedback laser is provided.This distributed feedback laser comprises: N-type GaAs substrate; And be deposited on N-type GaAs resilient coating on N-type GaAs substrate, N-type AlGaAs lower limit layer, active area, P type AlGaAs upper limiting layer successively.Wherein, through etching formation, it at least has the ridge waveguide of abutment wall grating in side to P type AlGaAs upper limiting layer.
According to another aspect of the present invention, provide a kind of preparation method, for the preparation of above-mentioned distributed feedback laser.This preparation method comprises: steps A, respectively ducting layer, P type AlGaAs upper limiting layer, contact electrode layer on barrier layer, undoped AlGaAs on barrier layer, quantum well layer, undoped AlGaAs under deposited n-type GaAs resilient coating, N-type AlGaAs lower limit layer, undoped AlGaAs lower waveguide layer, undoped AlGaAs on gaas substrates, completes the preparation of structural material; Step B, structural material is prepared the ridge waveguide of original bar shaped; Step C, adopts the method for electron beam exposure, and at least side of the ridge waveguide of original bar shaped, etching forms abutment wall grating.
(3) beneficial effect
As can be seen from technique scheme, distributed feedback laser of the present invention and preparation method thereof has following beneficial effect:
(1) owing to grating to be etched in the side of ridge waveguide, thus can all layers of disposable extension, AlGaAs material can not expose in atmosphere, thus can not produce Al problem of oxidation, and then effectively can improve power and the life-span of laser;
(2) due to all layers of disposable extension, then carry out abutment wall preparing grating, thus simplify the preparation technology of distributed feedback laser.
Accompanying drawing explanation
Figure 1A is the stereogram of prior art distributed feedback laser;
Figure 1B is the generalized section of distributed feedback laser shown in Figure 1A;
Fig. 2 A is the stereogram of embodiment of the present invention distributed feedback laser;
Fig. 2 B is the cutaway view of distributed feedback laser vertical section shown in Fig. 2 A;
Fig. 3 is raster graphic schematic diagram in distributed feedback laser shown in Fig. 2 A.
Fig. 4 is the flow chart of embodiment of the present invention distributed feedback laser preparation method.
[symbol description]
1-N type GaAs substrate; 2-N type GaAs resilient coating;
3-N type AlGaAs lower limit layer; 4-undoped AlGaAs lower waveguide layer;
Barrier layer under 5-undoped AlGaAs; 6-quantum well layer;
Barrier layer on 7-undoped AlGaAs; Ducting layer on 8-undoped AlGaAs;
9-P type AlGaAs upper limiting layer; 10-contact electrode layer;
A-undoped AlGaAs grating layer.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
It should be noted that, in accompanying drawing or specification describe, similar or identical part all uses identical figure number.The implementation not illustrating in accompanying drawing or describe is form known to a person of ordinary skill in the art in art.In addition, although herein can providing package containing the demonstration of the parameter of particular value, should be appreciated that, parameter without the need to definitely equaling corresponding value, but can be similar to corresponding value in acceptable error margin or design constraint.In addition, the direction term mentioned in following examples, such as " on ", D score, "front", "rear", "left", "right" etc., be only the direction with reference to accompanying drawing.Therefore, the direction term of use is used to illustrate and is not used for limiting the present invention.
The invention provides a kind of distributed feedback laser and preparation method thereof, can be completed the making of structural material by an epitaxial growth, the problem of oxidation not only overcoming aluminium also makes laser structure making simpler simultaneously.
In one exemplary embodiment of the present invention, provide a kind of distributed feedback laser.Fig. 2 A is the stereogram of embodiment of the present invention distributed feedback laser; Fig. 2 B is the cutaway view of distributed feedback laser vertical section shown in Fig. 2 A.As shown in Figure 2 A and 2 B, the present embodiment distributed feedback laser comprises: N-type GaAs substrate 1; Be deposited on the N-type GaAs resilient coating 2 on described N-type GaAs substrate 1, N-type AlGaAs lower limit layer 3, active area, P type AlGaAs upper limiting layer 9 and contact electrode layer 10 successively.Wherein, at least described P type AlGaAs upper limiting layer 9 forms through etching the ridge waveguide that its both sides have abutment wall grating.
Please refer to Fig. 2 A, different from distributed feedback laser in prior art shown in Fig. 1, the grating of the present embodiment distributed feedback laser is positioned at the both sides of ridge waveguide, thus N-type GaAs resilient coating 2, N-type AlGaAs lower limit layer 3, active area, P type AlGaAs upper limiting layer 9 can be extended down on N-type GaAs substrate once outward, avoid AlGaAs material and expose the Al oxidation caused, an extension also greatly simplify technique simultaneously.
Below respectively the various piece in the present embodiment distributed feedback laser is described in detail.
Substrate 1 is (100) face N-type gallium arsenic material.
Active area comprises: ducting layer 8 on barrier layer 7, undoped AlGaAs on barrier layer 5, quantum well layer 6, undoped AlGaAs under undoped AlGaAs lower waveguide layer 4, undoped AlGaAs.Wherein, quantum well layer can comprise 1 ~ 3 quantum well.
The interface of N-type AlGaAs lower limit layer and undoped AlGaAs lower waveguide layer easily forms high-quality heterojunction, reduces interface number, reduces the intensification that interfacial state compound thermal effect causes, thus improves the reliability of laser.Upper ducting layer is AlGaAs, easily obtains high-quality epitaxial material, thus improves the epitaxial wafer rate of finished products of laser.
Upper limiting layer is AlGaAs, easily obtains high-quality epitaxial material, thus improves the epitaxial wafer rate of finished products of laser.
Please refer to Fig. 2 A, in the present embodiment, on P type AlGaAs upper limiting layer 9 and undoped AlGaAs, the top section of ducting layer 8 is etched to form ridge waveguide, but the present invention is not as limit.It will be apparent to those skilled in the art that the degree of depth of this etching can be below P type AlGaAs upper limiting layer 9 upper surface, and any degree of depth on undoped AlGaAs more than barrier layer 7 lower surface.Generally, the depth H of this ridge waveguide is between 0.5 μm-2 μm, and its total width L is between 2 μm-5 μm.The width L1 of abutment wall grating is between 0.5 μm ~ 1 μm.
Fig. 3 is raster graphic schematic diagram in distributed feedback laser shown in Fig. 2 A.Please refer to Fig. 3, ridge waveguide comprises the bar shaped main body that is positioned at middle part and is positioned at these bar shaped main body both sides, abutment wall grating that is symmetrical, that extend along ridge waveguide length direction.
In order to make abutment wall grating effectively play feedback effect, must make the feedback wavelength of grating near required wavelength (760nm), this numerical value is also close with the material gain peak wavelength of active area.Wherein, the periods lambda of described abutment wall grating is according to following formulae discovery:
In formula 1, n is spectrum line progression (n can value be 1 or 2), and λ is that distributed feedback laser swashs the wavelength penetrated, n
efffor the effective refractive index of described active area.The duty ratio of this abutment wall grating is between 0.3 ~ 0.8.
In the present embodiment, optical grating construction is directly engraved in the abutment wall top of ridge waveguide, can reduce the challenge of the Material growths such as the secondary epitaxy caused because making grating, effectively can avoid the problem of oxidation of Al simultaneously, thus greatly improve the reliability of laser.
So far, the present embodiment distributed feedback laser is introduced complete.
In another embodiment of the present invention, a kind of preparation method of above-mentioned distributed feedback laser is additionally provided.Fig. 4 is the flow chart of embodiment of the present invention distributed feedback laser preparation method.Please refer to Fig. 2 A, Fig. 2 B and Fig. 4, this preparation method comprises:
Steps A, on the undoped AlGaAs depositing barrier layer under the undoped AlGaAs of the N-type GaAs resilient coating of 300nm, the N-type AlGaAs lower limit layer of 1000nm-1800nm, the undoped AlGaAs lower waveguide layer of 100nm-200nm, 10nm-100nm, the quantum well layer of 5nm-10nm, 10nm-100nm on gaas substrates respectively barrier layer, 100nm-200nm undoped AlGaAs on ducting layer, the P type AlGaAs upper limiting layer of 1000nm-1800nm, the contact electrode layer of 100nm-300nm, complete the preparation of structural material;
Step B, described structural material is prepared the ridge waveguide of original bar shaped;
The step B of the original bar shaped ridged of this formation comprises further:
Sub-step B1, coats photoresist on the surface of contact electrode layer, then adopts holographic exposure method reticle to carve the ridge waveguide figure of bar shaped;
Sub-step B2, mask is done with the ridge waveguide figure of photoresist, by inductively coupled plasma (ICP) method, structural material is etched, thus the ridge waveguide of original bar shaped is obtained at structural material upper surface, wherein, the degree of depth of etching is 0.5-2 μm, and the width of this ridge waveguide is 2-5 μm;
Step C, adopts the method for electron beam exposure, and in the both sides of the ridge waveguide of described original bar shaped, etching forms abutment wall grating, and the width of one-sided abutment wall grating is 0.5 μm-1 μm.
It should be noted that, the preparation process of this distributed feedback laser also needs multiple techniques such as prepared by upper/lower electrode, device is thinning, cleavage, and it is not emphasis place of the present invention, repeats no more herein.
So far, the present embodiment distributed feedback laser preparation method introduces complete.
By reference to the accompanying drawings the present invention two embodiment is described in detail above.Describe according to above, those skilled in the art should have clearly and accurately understanding to distributed feedback laser of the present invention and preparation method thereof.
In addition, the above-mentioned definition to each element and method is not limited in the various concrete structure or shape mentioned in execution mode, and those of ordinary skill in the art can replace it with knowing simply, such as:
(1) inductively coupled plasma (ICP) method also available reactive ion etching (RIE) method replace;
(2) AlGaAs can replace with GaAs;
(3) abutment wall grating can be produced on ridge waveguide side, also can all make abutment wall grating in the both sides of ridge waveguide.
In sum, the invention provides a kind of distributed feedback laser and preparation method thereof.In this distributed feedback laser, optical grating construction is directly engraved in the abutment wall top of ridge waveguide, the problem of the Material growth complexity such as the secondary epitaxy caused because making grating can being reduced, effectively can avoid the problem of oxidation of Al simultaneously, thus greatly improving the reliability of laser.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a distributed feedback laser, is characterized in that, comprising:
N-type GaAs substrate; And
Be deposited on the N-type GaAs resilient coating on described N-type GaAs substrate, N-type AlGaAs lower limit layer, active area, P type AlGaAs upper limiting layer successively;
Wherein, through etching formation, it at least has the ridge waveguide of abutment wall grating in side to described P type AlGaAs upper limiting layer.
2. distributed feedback laser according to claim 1, is characterized in that, the duty ratio of described abutment wall grating is between 0.3 ~ 0.8, and its periods lambda is according to following formulae discovery:
Wherein, n is spectrum line progression, and λ is that described distributed feedback laser swashs the wavelength penetrated, n
efffor the effective refractive index of described active area.
3. distributed feedback laser according to claim 2, is characterized in that, described n=1 or 2.
4. distributed feedback laser according to claim 1, is characterized in that, the width L of described ridge waveguide is between 2 μm-5 μm, and the width L1 of described abutment wall grating is between 0.5 μm ~ 1 μm.
5. distributed feedback laser according to any one of claim 1 to 4, described ridge waveguide comprises:
Be positioned at the bar shaped main body at middle part, and
Be positioned at described bar shaped main body both sides, symmetry the abutment wall grating extended along described bar shaped principal length direction.
6. distributed feedback laser according to any one of claim 1 to 4, described active area comprises from bottom to top: ducting layer on barrier layer, undoped AlGaAs on barrier layer, quantum well layer, undoped AlGaAs under undoped AlGaAs lower waveguide layer, undoped AlGaAs.
7. distributed feedback laser according to claim 6, is characterized in that, the etching depth of described ridge waveguide is below described P type AlGaAs upper limiting layer upper surface, the degree of depth on described undoped AlGaAs more than barrier layer lower surface.
8. distributed feedback laser according to claim 7, is characterized in that, the etching depth of described ridge waveguide is between 0.5 μm-2 μm.
9. a preparation method, for the preparation of the distributed feedback laser according to any one of claim 1 to 7, is characterized in that, comprising:
Steps A, respectively ducting layer, P type AlGaAs upper limiting layer, contact electrode layer on barrier layer, undoped AlGaAs on barrier layer, quantum well layer, undoped AlGaAs under deposited n-type GaAs resilient coating, N-type AlGaAs lower limit layer, undoped AlGaAs lower waveguide layer, undoped AlGaAs on gaas substrates, completes the preparation of structural material;
Step B, described structural material is prepared the ridge waveguide of original bar shaped;
Step C, adopts the method for electron beam exposure, and at least side of the ridge waveguide of described original bar shaped, etching forms abutment wall grating.
10. preparation method according to claim 9, is characterized in that, described step B comprises:
Sub-step B1, coats photoresist on the surface of contact electrode layer, then adopts holographic exposure method to expose the ridge waveguide figure of bar shaped;
Sub-step B2, does mask with the ridge waveguide figure of photoresist, etches, thus on structural material, obtain the ridge waveguide of original bar shaped by ICP method or RIE method to described structural material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310498595.3A CN103545711B (en) | 2013-10-22 | 2013-10-22 | Distributed feedback laser and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310498595.3A CN103545711B (en) | 2013-10-22 | 2013-10-22 | Distributed feedback laser and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103545711A CN103545711A (en) | 2014-01-29 |
| CN103545711B true CN103545711B (en) | 2015-12-30 |
Family
ID=49968906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310498595.3A Active CN103545711B (en) | 2013-10-22 | 2013-10-22 | Distributed feedback laser and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103545711B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105591281B (en) * | 2014-10-21 | 2019-11-29 | 长春理工大学 | A kind of distributed Bragg reflector semiconductor laser grating preparation process |
| FR3054734B1 (en) * | 2016-07-27 | 2018-09-07 | Universite Paris Sud | LASER DIODE WITH DISTRIBUTED FEEDBACK |
| CN106785829B (en) * | 2017-01-10 | 2019-09-27 | 中国科学院长春光学精密机械与物理研究所 | A kind of distributed feedback laser and preparation method thereof, distributed feedback laser array |
| CN107147447A (en) * | 2017-04-18 | 2017-09-08 | 中山大学 | A kind of smooth beat signal transmitting chip and preparation method |
| CN110808533B (en) * | 2019-10-14 | 2022-01-21 | 湖北光安伦芯片有限公司 | High-temperature ICP (inductively coupled plasma) etching method for aluminum-containing material in high-speed DFB (distributed feed Back) chip |
| CN110880675A (en) * | 2019-11-25 | 2020-03-13 | 江苏华兴激光科技有限公司 | Single longitudinal mode edge-emitting laser with lateral photogate oxidation limiting structure and preparation method thereof |
| CN111769436B (en) * | 2020-07-07 | 2021-09-28 | 因林光电科技(苏州)有限公司 | Distributed feedback laser chip and preparation method thereof |
| CN113206448B (en) * | 2021-04-30 | 2023-04-07 | 中国科学院半导体研究所 | Laser with current barrier layer |
| CN114039274B (en) * | 2021-10-18 | 2023-12-19 | 长春理工大学 | Lateral coupling distributed feedback laser with narrow groove structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4813054A (en) * | 1986-11-08 | 1989-03-14 | Stc Plc | Distributed feedback laser |
| EP1037342A2 (en) * | 1999-03-08 | 2000-09-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and fabrication method thereof |
| CN101859983A (en) * | 2010-05-12 | 2010-10-13 | 中国科学院半导体研究所 | Quantum cascade laser with photonic quasi-crystal waveguide and manufacture method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179274A (en) * | 2002-11-26 | 2004-06-24 | Hitachi Ltd | Optical semiconductor device |
| JP2005166998A (en) * | 2003-12-03 | 2005-06-23 | Mitsubishi Electric Corp | Ridge-type distribution feedback semiconductor laser |
-
2013
- 2013-10-22 CN CN201310498595.3A patent/CN103545711B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4813054A (en) * | 1986-11-08 | 1989-03-14 | Stc Plc | Distributed feedback laser |
| EP1037342A2 (en) * | 1999-03-08 | 2000-09-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and fabrication method thereof |
| CN101859983A (en) * | 2010-05-12 | 2010-10-13 | 中国科学院半导体研究所 | Quantum cascade laser with photonic quasi-crystal waveguide and manufacture method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 半导体激光器在氧气探测中的应用及关键技术;刘云燕等;《激光与红外》;20110531;第41卷(第5期);第501-505页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103545711A (en) | 2014-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103545711B (en) | Distributed feedback laser and preparation method thereof | |
| CN106953235A (en) | Single mode GaSb base semiconductor lasers and preparation method thereof | |
| CN102025110B (en) | Inclined cavity surface two-dimensional photonic crystal distribution feedback quantum cascade laser and preparation method | |
| CN103346478B (en) | In stibium gallium, infrared round spot exports low divergence edge emitting photon crystal laser | |
| CN102738701A (en) | Distributed feedback laser and preparation method thereof | |
| CN101345393B (en) | Production method of single-face metallic waveguide Terahertz quantum cascaded laser | |
| CN109167253B (en) | Manufacturing method of small-divergence-angle buried heterojunction DFB laser | |
| WO2020151290A1 (en) | On-chip integrated semiconductor laser structure and manufacturing method thereof | |
| CN104538843A (en) | Manufacturing method of semiconductor laser chip for carbon dioxide detection | |
| CN105207055A (en) | Half-edge apodized sampling grating based on reconstruction-equivalence chirp and DFB laser | |
| CN114759429A (en) | Single spatial mode low divergence angle narrow linewidth composite photon crystal laser | |
| TWM569067U (en) | Electric excitation photon crystal surface-emitting laser device | |
| CN117134196A (en) | Single-mode buried semiconductor laser and preparation method thereof | |
| CN103515842A (en) | Method for preparing multi-wavelength silicon substrate mixed laser array in nanometer impressing mode | |
| JPS6163031A (en) | Method of producing semiconductor device | |
| CN206225776U (en) | A kind of semiconductor laser with pectination CURRENT DISTRIBUTION | |
| CN102856789B (en) | Mixed silicon single mode annular cavity laser based on microstructural silicon waveguide frequency selection | |
| CN206195152U (en) | Ladder ridge semiconductor laser | |
| CN206542066U (en) | A kind of edge emitting high speed semiconductor laser chip | |
| JPS61242090A (en) | Semiconductor laser | |
| CN102377109B (en) | Manufacture method of distributed feedback laser for restraining space hole-burning effect | |
| CN104466674B (en) | Integrated conjunction beam laser and preparation method thereof on piece based on photonic crystal Y waveguide | |
| CN110224296B (en) | Semiconductor laser and preparation method thereof | |
| CN107069431A (en) | A kind of GaAs base edge-emitting laser preparation methods based on 3D printing | |
| CN106785884A (en) | A kind of semiconductor laser with pectination CURRENT DISTRIBUTION and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171025 Address after: 437100 cross two road of Xianning hi tech Industrial Park, Hubei Patentee after: Hubei Sailstar photoelectric Polytron Technologies Inc Address before: 100083 Beijing Qinghua East Road, Haidian District, No. 35 Patentee before: Semiconductor Inst., Chinese Academy of Sciences |
|
| TR01 | Transfer of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20211203 Granted publication date: 20151230 |
|
| PP01 | Preservation of patent right |