CN206225776U - A kind of semiconductor laser with pectination CURRENT DISTRIBUTION - Google Patents
A kind of semiconductor laser with pectination CURRENT DISTRIBUTION Download PDFInfo
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- CN206225776U CN206225776U CN201621243081.9U CN201621243081U CN206225776U CN 206225776 U CN206225776 U CN 206225776U CN 201621243081 U CN201621243081 U CN 201621243081U CN 206225776 U CN206225776 U CN 206225776U
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Abstract
The utility model is related to a kind of semiconductor laser with pectination CURRENT DISTRIBUTION, including substrate, metal contact layer and ohmic contact layer, one of the substrate, metal contact layer and ohmic contact layer use resistance pectination distributed architecture, or the substrate uses resistance pectination distributed architecture with metal contact layer, or the substrate uses resistance pectination distributed architecture with ohmic contact layer, or the metal contact layer uses resistance pectination distributed architecture, or the substrate, metal contact layer and ohmic contact layer to use resistance pectination distributed architecture with ohmic contact layer.The utility model realizes the semiconductor laser with the compound coupling grating of gain refractive index by the way that the metal contact zone of laser or ohmic contact regions are made as into resistance pectination distributed architecture.The utility model can not be related to secondary epitaxy technique, simplify the manufacture difficulty of device, meanwhile, also retains the plurality of advantages of gain coupling grating semiconductor laser.
Description
Technical field
The utility model is related to a kind of semiconductor devices, and in particular to a kind of semiconductor laser with pectination CURRENT DISTRIBUTION
Device.
Background technology
Distributed Feedback (Distributed Feedback, DFB) semiconductor laser (DFB-LD) and distributed Bradley
Lattice reflector (Distributed Bragg Reflector, DBR) semiconductor laser (DBR-LD) is by including Prague
Grating realizes the feedback of light.Both differences are grating different with the position of active area.Cork Buddhist nun gram in 1972
(H.Kogelnik) and in the theory analysis of Shanks (C.V.Shank) et al. point out, exist in DFB-LD two kinds it is basic anti-
Feedback mode, a kind of is that refractive index periodic changes the Bragg reflection for causing, i.e. index-coupled type (Index-Coupling),
Another kind is the distributed feed-back that gain period change causes, i.e. gain coupling (Gain-Coupling).Reflected with by two
End face is compared forming the F-P cavity laser of resonator, the resonator of the DFB-LD ability with selection mode in itself.And DFB
Laser is similar, and DBR laser is also the feedback that light is realized by including Bragg grating, it is easy to other devices collection
Into.
For index-coupled type DFB-LD, with bragg wavelength (two/mono- one-tenth integer with screen periods
Times relation) two identical and minimum patterns of loss are there are on symmetrical position.In other words, index-coupled DFB-LD is former
It is bimodulus lasing in reason, single mode yield depends on the position phase situation of tube core chamber concave grating.When an end face antiradar reflectivity plated film,
When making an end face high reflectance plated film, single mode yield is more than 50%.Center introduces λ/4 phase-shifted grating and can improve single mode
Lasing rate, but Injection Current it is excessive when be easy to form hole-burning effect at phase shift, destroy λ/4 phase shifts effect, make high power
Single mode stability is deteriorated during work, and line width is difficult to be made narrower.And introducing CMP can realize high-power, stabilization single-mode output, but
It is complex manufacturing technology, yield rate is low.In manufacture craft, index-coupled type DFB-LD needs to carry out two after grating preparation
Secondary extension, secondary epitaxy and preparing grating technique are very crucial, have influence on the performance of distributed feedback laser.And gain coupled mode
It is minimum pattern that DFB-LD has a loss on bragg wavelength just, it is possible to achieve single mode emission.Gain is coupled
Type DFB-LD has single mode yield high, side mode suppression ratio high, receiving end and the influence reflected is smaller, anti-external feedback ability
By force, pure gain coupled mode can be on the premise of threshold current not be increased, the advantages of gain for threshold value difference is made into very big.But increase
The making of beneficial grating and the regrowth of grating surface are the difficult points that it makes, and are also easy to introduce substantial amounts of non-radiative multiple in active area
Defect is closed, the lasing characteristic of laser is had influence on.The compound DFB-LD of gain refractive index has the advantages that two kinds of coupling types, but
It is that two kinds of CGCMs are difficult to control in the compound DFB-LD of gain refractive index, gain disturbance in communication, active area is periodic
Absorb, easily cause the rising of threshold current.Although DBR-LD also can single mode operation, its single mode operation stability compares DFB-
LD is poor, and the reflectivity of DBR-LD is very easy to influence the performance of device, wants to obtain high performance DBR-LD, just must be to coupling
Coefficient is optimized.From from the perspective of structure, technique, the material of active area and grating region in DBR-LD is different, light
Grid region is transparent to the excitation wavelength of active area.In practical devices, two waveguides are made in different epitaxial layers.
This means the technique that the manufacture craft of DBR-LD will be difficult to DFB-LD.
In sum, all asked in the presence of certain difficulty in manufacture craft in the semiconductor laser for including Bragg grating
Topic, index-coupled type carries out well secondary epitaxy after grating preparation；The making of gain coupled mode is related to the processing of active area, right
The performance of device has considerable influence；The technique that the manufacture craft of DBR-LD will be difficult to DFB-LD.
Utility model content
In order to solve the above-mentioned technical problem, the utility model proposes a kind of semiconductor laser with pectination CURRENT DISTRIBUTION
Device, technical scheme is as follows.
A kind of semiconductor laser with pectination CURRENT DISTRIBUTION, semiconductor laser include substrate, metal contact layer and
Ohmic contact layer, wherein, one of the substrate, metal contact layer and ohmic contact layer use resistance pectination distributed architecture, or
The substrate uses resistance pectination distributed architecture, or the substrate to use resistance pectination with ohmic contact layer with metal contact layer
Distributed architecture, or the metal contact layer uses resistance pectination distributed architecture, or the substrate, metal with ohmic contact layer
Contact layer and ohmic contact layer use resistance pectination distributed architecture.
Further, the semiconductor laser is additionally included in lower limit layer, the lower waveguide set gradually on the substrate
Layer, active area, upper ducting layer and upper limiting layer and the dorsum electrode layer set under the substrate, and in the metal contact layer
The upper electrode layer of upper setting；Ohmic contact layer is arranged between upper limiting layer and metal contact layer；Wherein, the lower limit layer,
Lower waveguide layer, active area, upper ducting layer, upper limiting layer and ohmic contact layer constitute epitaxial structure.
Further, the semiconductor laser uses index guide structure structure or gain guided structure.
Further, optical grating construction is prepared in the substrate, lower waveguide layer or upper ducting layer.
Further, the epitaxial structure also includes transverse mode limiting structure.
Further, the regularity of distribution of the resistance pectination distributed architecture is that whole resistance values are distributed in pectination height, or
Person is that subregion resistance value is distributed in pectination height, and other area resistance values are in homogeneous distribution.
Further, the resistance pectination distributed architecture is homogeneous in each high resistance area size, while each low electricity
The homogeneous period profile of resistance area's size；Or it is equal in each high resistance area size and each low-resistance region size
Inequality is once regular distribution.
Further, when the ohmic contact layer uses resistance pectination distributed architecture, the upper limiting layer uses resistance
Pectination distributed architecture, its regularity of distribution is that whole resistance values of upper limiting layer are distributed in pectination height, or upper limiting layer
Subregion resistance value is distributed in pectination height, and other area resistance values are in homogeneous distribution.
Further, in the resistance pectination distributed architecture, the dutycycle of low-resistance region high is consistent or inconsistent.
The beneficial effects of the utility model：The utility model is by by the metal contact zone of laser or ohmic contact regions
Resistance pectination distributed architecture is made as, the distribution of this electric current can change size and the distribution of real part of permittivity and imaginary part,
Realize DFB-LD or DBR-LD with the compound coupled mode of gain-refractive index.The resistance pectination distributed architecture makes the load of injection
Flow sub- concentration to be distributed into pectination, and then form gain and the regular change of refractive index.This change has the utility model
Single mode emission, side mode suppression ratio high, receiving end and the influence reflected is smaller, anti-external feedback ability is strong, can not increase threshold
On the premise of value electric current, the advantages of gain for threshold value difference is made into very big, while will not also introduce substantial amounts of non-radiative recombination defect.
In manufacture craft, because manufacturing process of the present utility model can not be related to secondary epitaxy, so as to reduce to preparation technology
Requirement, also reduce the manufacture difficulty of device.
Brief description of the drawings
Fig. 1 be the utility model proposes a kind of semiconductor laser with pectination CURRENT DISTRIBUTION cross-section structure signal
Figure；
Fig. 2 be the utility model proposes semiconductor laser in CURRENT DISTRIBUTION schematic diagram；
Fig. 3 be the utility model proposes a kind of semiconductor laser with comb metal contact zone structural representation
Figure；
Fig. 4 be the utility model proposes a kind of semiconductor laser with pectination ohmic contact regions structural representation
Figure；
Fig. 5 be the utility model proposes a kind of structure of semiconductor laser with part comb metal contact zone show
It is intended to；
Fig. 6 be the utility model proposes a kind of structure of semiconductor laser with part pectination ohmic contact regions show
It is intended to；
Fig. 7 be the utility model proposes a kind of substrate have pectination resistance height distributed area semiconductor laser knot
Structure schematic diagram.
Specific embodiment
To make the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with specific embodiment, and
Referring to the drawings, the utility model is further described.But those skilled in the art know, the utility model does not limit to
In accompanying drawing and following examples.
The utility model proposes a kind of semiconductor laser with pectination CURRENT DISTRIBUTION, its composition structure such as Fig. 1 institute
Show, including substrate 1009, it is additionally included in epitaxial structure, metal contact layer 1002 and the upper electrode layer set gradually on substrate 1009
1001, and in 1009 times dorsum electrode layers 1010 of setting of substrate.Its epitaxial structures includes setting gradually down from the bottom up
Limiting layer 1008, lower waveguide layer 1007, active area 1006, upper ducting layer 1005, upper limiting layer 1004 and ohmic contact layer 1003.
For statement is convenient, by dorsum electrode layer 1010, substrate 1009, lower limit layer 1008, lower waveguide layer 1007, active area 1006, upper ripple
Conducting shell 1005, upper limiting layer 1004 are referred to as universal architecture 1011.
The laser can be using index guide structure structures such as ridge waveguide structure or buried heterostructures, it is also possible to adopt
Use gain guided structure.
The substrate 1009, lower waveguide layer 1007 or upper ducting layer 1005 can prepare optical grating construction.
The active area 1006 can be multi layered quantum dots structure, or multi-quantum pit structure, can also be both
The mixing of structure.
The epitaxial structure can also including proton bombardment area, barrier layer etc. transverse mode limiting structure.
The ohmic contact layer 1003 uses resistance pectination distributed architecture, and its regularity of distribution can be ohmic contact layer 1003
Whole resistance values in pectination height distribution, or ohmic contact layer 1003 subregion resistance value in pectination height point
Cloth, other area resistance values are in homogeneous distribution.And/or the metal contact layer 1002 uses resistance pectination distributed architecture, its point
Cloth rule can be whole resistance values of metal contact layer 1002 in the distribution of pectination height, or metal contact layer 1002
Subregion resistance value is distributed in pectination height, and other area resistance values are in homogeneous distribution.
Preferably, during the resistance pectination distributed architecture can expand to upper limiting layer 1004 from ohmic contact layer 1003,
The regularity of distribution of the resistance pectination distributed architecture of upper limiting layer 1004 is with the resistance pectination distributed architecture of ohmic contact layer 1003
The regularity of distribution can be whole resistance values of upper limiting layer 1004 in the distribution of pectination height, or upper limiting layer 1004
Subregion resistance value is distributed in pectination height, and other area resistance values are in homogeneous distribution.
Preferably, the resistance value of the resistance substrate 1009 can be used and be uniformly distributed structure, it would however also be possible to employ resistance is combed
Shape distributed architecture, the regularity of distribution of resistance pectination distributed architecture can be that whole resistance values are distributed in pectination height, can also be
Subregion resistance value is distributed in pectination height, and other area resistance values are in homogeneous distribution.
Can be that each high resistance area size is homogeneous in resistance pectination distributed architecture, while each low-resistance region face
The uniform period profile of product, or each high resistance area size and each low-resistance region size it is uneven once
Regular distribution, such as arithmetic progression distribution, chirp grating distribution, sampled-grating distribution etc..
In resistance pectination distributed architecture, the dutycycle of low-resistance region high can be consistent, or inconsistent.
Fig. 2 gives the CURRENT DISTRIBUTION schematic diagram in semiconductor laser, from the note of upper electrode layer 2001 of the laser
Enter electric current 2012, electric current 2012 is after pectination contact layer 2023 for pectination is distributed in universal architecture 2011.
The production order of semiconductor laser is usually：
1) MOCVD growths epitaxial structure；
2) guiding structural is prepared：Photoetching post-etching prepares ridge waveguide structure, or photoetching corrosion adds secondary epitaxy preparation to cover
Bury heterojunction structure, or photoetching corrosion adds impurity diffusion for buried heterostructure, then or proton bombardment form gain guided
Structure；
3) pectination contact layer is prepared：Diffusion, etching, ion beam bombardment etc. are combined using electron beam exposure (or holographic lithography)
Mode prepares the metal contact layer of resistance pectination distribution；Or ohmic contact layer, also upper limiting layer can be extended to by ohmic contact layer；
Or the distribution of resistance pectination includes metal contact layer and ohmic contact layer, also can be extended to upper limiting layer simultaneously；
4) insulating barrier is prepared；
5) upper electrode layer 1001 and dorsum electrode layer 1010 are prepared.
Above-mentioned steps sequencing can change because of the laser of different guiding structural types.
The specific design preparation method to device is described below in conjunction with the accompanying drawings.
Embodiment 1
As shown in figures 1 and 3, the structure of semiconductor laser is specially：It is followed successively by InP substrate 1009 under 1 μm of InP
Ducting layer on limiting layer 1008,100nm InGaAsP lower waveguide layers 1007, multi-quantum well active region 1006,100nm InGaAsP
1005th, the InGaAs ohmic contact layers 1003 of 300nm InP upper limiting layers 1004,200nm, Ti-Pt-Au metal contact layers
1002nd, upper electrode layer 1001, are dorsum electrode layer 1010 under substrate 1009.
Wherein, with InGaAsP as SQW, AlGaInAs or InGaAsP is potential barrier, quantum to multi-quantum well active region 1006
Well layer number is 3-10 layers, and quantum well layer thickness is 5-8nm, barrier layer thickness 5-10nm, and strain is all 1.2%, center excitation wavelength
1.2um-1.7um scopes (design parameter is different by design difference).
Metal contact layer 1002 is pectinate texture, and the cycle is about 200-260nm, and dutycycle is 3:7~6:4.Device cavity is long
300-500μm.Using ridge waveguide structure, ridge is wide 3-5 μm.
The Making programme of semiconductor laser is in the present embodiment：
1) MOCVD growths epitaxial structure, the epitaxial structure includes：Lower limit layer 1008, lower waveguide layer 1007, active area
1006th, upper ducting layer 1005, upper limiting layer 1004 and ohmic contact layer 1003；
2) photoetching post-etching prepares ridge waveguide structure；
3) on ohmic contact layer 1003 prepared by oxidation insulating layer；
4) after prepared by electron beam exposure (or holographic lithography) and etched portions oxidation insulating layer, pectination oxide isolated area is formed
3025；
5) depositing Ti-Pt-Au, prepares comb metal contact zone 3024；Pectination oxide isolated area 3025 and comb metal connect
Touch area 3024 and constitute metal contact layer 3002, as shown in Figure 3；
6) upper electrode layer 3001 is prepared after photoetching；
7) dorsum electrode layer 1010 is prepared after thinning.
In the present embodiment, the resistance of metal contact layer 3002 is pectination distributed architecture, and pectinate texture covers whole metal and connects
Contact layer 3002, as shown in Figure 3.
Embodiment 2
The present embodiment as shown in figure 4, it is with the difference of embodiment 1, the electricity of metal contact layer 3002 in embodiment 1
It is pectination distributed architecture to hinder, and the ohmic contact layer 4003 in the present embodiment on universal architecture 4011 includes high resistance area 4027 and low
Resistance area 4026, resistance is in that regular pectination height is distributed, and metal contact layer 4002 is uniformly distributed for resistance.Alternatively, electricity high
Resistance area 4027 can also be oxide isolated area.
The Making programme of semiconductor laser is in the present embodiment,
1) MOCVD growths epitaxial structure includes：Lower limit layer, lower waveguide layer, active area, upper ducting layer, upper limiting layer, Europe
Nurse contact layer 4003；
2) after electron beam exposure (or holographic lithography), diffusion or ion beam bombardment prepare high resistance area 4027；Or electricity
Etching forms space interval area to beamlet exposure (or holographic lithography) afterwards, and high resistance area 4027 is formed after oxidized insulating layer deposition；
The remainder of ohmic contact layer 4003 is low-resistance region 4026；
3) photoetching post-etching prepares ridge waveguide structure；
4) prepared by oxidation insulating layer；
5) after prepared by photoetching and etched portions oxidation insulating layer, metal contact zone is formed；
6) depositing Ti-Pt-Au, prepares metal contact layer 4002；
7) upper electrode layer 4001 is prepared after photoetching；
8) dorsum electrode layer is prepared after thinning.
Embodiment 3
The present embodiment as shown in figure 5, the present embodiment is with the difference of embodiment 1, cover in embodiment 1 by pectinate texture
Whole metal contact layer 3002 is covered, a part for metal contact layer 5002 is comb metal contact zone 5024 and comb in the present embodiment
The comb metal contact zone 5023 of the composition of shape oxide isolated area 5025, another part is homogeneous metal contact zone 5029.Pectination gold
Category contact zone 5023 is located at homogeneous one end of metal contact zone 5029 (as shown in Figure 5), or comb metal contact zone 5023 is located at
The homogeneous two ends of metal contact zone 5029 (not shown).Reference 5011 represents universal architecture.
The Making programme of semiconductor laser is in the present embodiment：
1) MOCVD growths epitaxial structure, the epitaxial structure includes：Lower limit layer, lower waveguide layer, active area, upper ducting layer,
Upper limiting layer and ohmic contact layer 5003；
2) photoetching post-etching prepares ridge waveguide structure；
3) on ohmic contact layer prepared by oxidation insulating layer；
4) after prepared by the partial oxidation insulating barrier in electron beam exposure (or holographic lithography) and etched portions region, pectination is formed
Oxide isolated area 5025；
5) depositing Ti-Pt-Au, prepares the comb metal contact zone 5024 of the subregion；The comb of the subregion
Shape oxide isolated area 5025 and comb metal contact zone 5024 constitute the comb metal contact zone 5023 of metal contact layer 5002, its
Remaining part subregion constitutes the homogeneous metal contact zone 5029 of metal contact layer 5002, as shown in Figure 5；
6) upper electrode layer 5001 is prepared after photoetching；
7) dorsum electrode layer is prepared after thinning.
Embodiment 4
The present embodiment as shown in fig. 6, it is with the difference of embodiment 2, whole ohmic contact layer in embodiment 2
4003 resistance are in that regular pectination height is distributed, and ohmic contact layer 6003 is by resistance pectination distributed area 6030 and electricity in the present embodiment
Hinder homogeneous area 6031 to constitute, resistance pectination distributed area 6030 is located at the homogeneous one end of area 6031 (not shown) of resistance, or resistance comb
Shape distributed area 6030 is located at the homogeneous two ends of area 6031 (as shown in Figure 6) of resistance.The resistance pectination distributed area 6030 is by low resistance
Area 6026 and high resistance area or oxide isolated area 6027 are constituted.
The Making programme of semiconductor laser is in the present embodiment,
1) MOCVD growths epitaxial structure includes：Lower limit layer, lower waveguide layer, active area, upper ducting layer, upper limiting layer, Europe
Nurse contact layer 6003；
2) after electron beam exposure (or holographic lithography), diffusion or ion beam bombardment prepare high resistance area 6027；Or electricity
Etching forms space interval area to beamlet exposure (or holographic lithography) afterwards, and high resistance area 6027 is formed after oxidized insulating layer deposition；
The remainder of ohmic contact layer 6003 is low-resistance region 6026；
3) photoetching post-etching prepares ridge waveguide structure；
4) prepared by oxidation insulating layer；
5) after prepared by photoetching and etched portions oxidation insulating layer, metal contact zone is formed；
6) depositing Ti-Pt-Au, prepares metal contact layer 6002；
7) upper electrode layer 6001 is prepared after photoetching；
8) dorsum electrode layer is prepared after thinning.
Embodiment 5
The present embodiment is to be free of grating, this reality in embodiment 1-4 in universal architecture with the difference of embodiment 1-4
Apply and prepare optical grating construction in example in universal architecture, position prepared by optical grating construction can be in substrate 1009, or upper ripple
Conducting shell 1005 or lower waveguide layer 1007 (as shown in Figure 1).
The preparation method of the present embodiment semiconductor laser is with the preparation method difference of embodiment 1-4, this reality
Apply the Making programme in example in embodiment 1-4 and 1) be prepared for optical grating construction in substrate 1009 before step, or in Making programme
The step of preparing optical grating construction 1) is added in ducting layer 1005 or lower waveguide layer 1007 in step and secondary epitaxy is carried out.
Embodiment 6
The present embodiment is that resistance substrate uniformly divides in universal architecture in embodiment 1-4 with the difference of embodiment 1-4
Cloth, the resistance of substrate 7009 is also distributed with high resistance area 7027 and low-resistance region in pectination in universal architecture 7011 in the present embodiment
7026.When structure of the substrate 7009 using the present embodiment, the resistance of metal contact layer 7002 can be using (the figure figure of embodiment 1
3) or embodiment 3 (such as Fig. 5) structure, it would however also be possible to employ the homogeneous structural of embodiment 2 (such as Fig. 4) or embodiment 4 (such as Fig. 6)；
The resistance of ohmic contact layer 7003 can be using embodiment 1 (figure Fig. 3) or the homogeneous structural of embodiment 3 (such as Fig. 5), it is also possible to adopt
With embodiment 2 (such as Fig. 4) or the structure of embodiment 4 (such as Fig. 6).The resistance that Fig. 7 gives metal contact layer 7002 uses Fig. 3 institutes
The pectination distributed architecture for showing, the resistance of ohmic contact layer 7003 uses the example of the homogeneous structural shown in Fig. 3, wherein metal contact
High resistance area 7027 and the position of low-resistance region 7026 and the high resistance area 7027 of substrate 7009 and the low-resistance region of layer 7002
7026 position correspondence is consistent.
The preparation method of the present embodiment is with the difference of embodiment 1-4, in the system of embodiment 1-4 in the present embodiment
Make the of flow and 1) prepare high resistance area 7027 by adulterating after photoetching on substrate 7009 before step, according to metal contact layer 7002
Whether there is pectination to be distributed with the resistance of ohmic contact layer 7003, retain or give up corresponding making step in Making programme.
Embodiment 7
The present embodiment is that pectination contact layer 2023 includes ohmic contact layer and metal with the difference of embodiment 1-4
Contact layer, refers to structure shown in Fig. 2.Ohmic contact layer is identical with the resistance pectination regularity of distribution of metal contact layer.
The Making programme of semiconductor laser is in the present embodiment：
1) MOCVD growths epitaxial structure, the epitaxial structure includes：Lower limit layer, lower waveguide layer, active area, upper ducting layer,
Upper limiting layer and ohmic contact layer；
2) photoetching post-etching prepares ridge waveguide structure；
3) prepared by oxidation insulating layer；
4) after electron beam exposure (or holographic lithography), diffusion or ion beam bombardment prepare high resistance area；Or electron beam
Etching forms space interval area afterwards for exposure (or holographic lithography), and high resistance area is formed after oxidized insulating layer deposition；Ohmic contact
The remainder of layer is low-resistance region；
5) depositing Ti-Pt-Au, prepares pectination contact zone 2023；Pectination oxide isolated area and comb metal contact zone are constituted
Pectination contact zone 2023；
6) upper electrode layer is prepared after photoetching；
7) dorsum electrode layer is prepared after thinning.
More than, implementation method of the present utility model is illustrated.But, the utility model is not limited to above-mentioned implementation
Mode.It is all it is of the present utility model spirit and principle within, any modification, equivalent substitution and improvements done etc. should be included in
Within protection domain of the present utility model.
Claims (9)
1. a kind of semiconductor laser with pectination CURRENT DISTRIBUTION, it is characterised in that semiconductor laser includes substrate, metal
Contact layer and ohmic contact layer, wherein, one of the substrate, metal contact layer and ohmic contact layer are using resistance pectination distribution knot
Structure, or the substrate uses resistance pectination distributed architecture, or the substrate to be used with ohmic contact layer with metal contact layer
Resistance pectination distributed architecture, or the metal contact layer uses resistance pectination distributed architecture with ohmic contact layer, or described
Substrate, metal contact layer and ohmic contact layer use resistance pectination distributed architecture.
2. semiconductor laser according to claim 1, it is characterised in that the semiconductor laser is additionally included in described
The lower limit layer, lower waveguide layer, active area, upper ducting layer and the upper limiting layer that are set gradually on substrate and the setting under the substrate
Dorsum electrode layer, and on the metal contact layer set upper electrode layer；Ohmic contact layer is arranged on upper limiting layer and gold
Between category contact layer；Wherein, the lower limit layer, lower waveguide layer, active area, upper ducting layer, upper limiting layer and ohmic contact layer
Constitute epitaxial structure.
3. semiconductor laser according to claim 1, it is characterised in that the semiconductor laser is led using refractive index
Guiding structure or gain guided structure.
4. semiconductor laser according to claim 2, it is characterised in that in the substrate, lower waveguide layer or upper ripple
Conducting shell prepares optical grating construction.
5. semiconductor laser according to claim 2, it is characterised in that the epitaxial structure also includes that transverse mode limits knot
Structure.
6. the semiconductor laser according to any one of claim 1-5, it is characterised in that the resistance pectination distribution knot
The regularity of distribution of structure is that whole resistance values are distributed in pectination height, or subregion resistance value is distributed in pectination height, its
His area resistance value is in homogeneous distribution.
7. semiconductor laser according to claim 6, it is characterised in that the resistance pectination distributed architecture is high in each
Resistance area size is homogeneous, while the homogeneous period profile of each low-resistance region size；Or in each high resistance area
Size and each low-resistance region size inequality are once regular distribution.
8. the semiconductor laser according to any one of claim 2-5, it is characterised in that when the ohmic contact layer is adopted
During with resistance pectination distributed architecture, the upper limiting layer uses resistance pectination distributed architecture, and its regularity of distribution is upper limiting layer
Whole resistance values are distributed in pectination height, or the subregion resistance value of upper limiting layer is distributed in pectination height, other areas
Domain resistance value is in homogeneous distribution.
9. the semiconductor laser according to any one of claim 1-5, it is characterised in that the resistance pectination distribution knot
In structure, the dutycycle of low-resistance region high is consistent or inconsistent.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785884A (en) * | 2016-11-15 | 2017-05-31 | 中国科学院福建物质结构研究所 | A kind of semiconductor laser with pectination CURRENT DISTRIBUTION and preparation method thereof |
| CN112072466A (en) * | 2020-09-08 | 2020-12-11 | 因林光电科技(苏州)有限公司 | Semiconductor laser and preparation method thereof |
-
2016
- 2016-11-15 CN CN201621243081.9U patent/CN206225776U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785884A (en) * | 2016-11-15 | 2017-05-31 | 中国科学院福建物质结构研究所 | A kind of semiconductor laser with pectination CURRENT DISTRIBUTION and preparation method thereof |
| CN112072466A (en) * | 2020-09-08 | 2020-12-11 | 因林光电科技(苏州)有限公司 | Semiconductor laser and preparation method thereof |
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