CN115864135B - DFB laser chip with graded ridge waveguides at two ends - Google Patents
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Abstract
The invention discloses a DFB laser chip with graded ridge waveguides at two ends, which relates to the technical field of DFB laser chips and comprises a first laser cavity with a first ridge and a second laser cavity with a second ridge; the first ridge is gradually changed to form a first HR gradual change section with gradually increased width near the cleavage surface of the first HR coating, and is gradually changed to form a first AR gradual change section with gradually reduced width near the cleavage surface of the first AR coating; the second ridge is gradually changed to form a second HR gradual change section with gradually reduced width near the cleavage surface of the second HR coating, and is gradually changed to form a second AR gradual change section with gradually reduced width near the cleavage surface of the second AR coating. The arrangement of the first HR transition section and the second HR transition section enables the device to have higher SMSR, the Shan Moliang rate can reach 100%, and the uniformity and consistency of the chip performance are better; and the arrangement of the first AR graded section and the second AR graded section enables the device to realize circular light spot output, and is easy for optical fiber coupling.
Description
Technical Field
The invention relates to the technical field of DFB laser chips, in particular to a DFB laser chip with graded ridge waveguides at two ends.
Background
Distributed Feedback (DFB) laser chips have found wide application in the fields of optical communication systems, optical measurement techniques, optical storage techniques, optical information processing techniques, and the like. In contrast to Fabry-Perot (FP) lasers, which use concentrated feedback through both facets, DFB laser chips use a built-in grating to achieve distributed feedback of light. For the simplest fabricated index coupled uniform grating DFB laser, there are two modes (degenerate modes) with the same loss at the edges of the Bragg stop band. Thus, this type of laser is dual-mode lasing in nature. Whether to operate in a single longitudinal mode and whether to have a high Side Mode Suppression Ratio (SMSR) is a key performance feature of DFB lasers.
The chinese patent application No. 201410415953.4 discloses a ridge waveguide distributed feedback semiconductor laser with high single longitudinal mode yield, which comprises a first ridge and a second ridge, wherein the first ridge has a uniform stripe structure, the second ridge has a section of abrupt widening along y direction near the back end surface, and the widening can be equivalently expressed in L P Is generated within the length of the first ridge
The phase shift is performed, so that the theoretical single longitudinal mode yield of the device can be doubled. But this solution has the following problems: firstly, the scheme can only realize that the theoretical single longitudinal mode yield is doubled, but the Shan Moliang rate can not be 100%, so that the problems in the prior art can not be thoroughly solved; secondly, the laser chips lighted by the second ridge stripe are suddenly widened at the back end surface, so that light scattering loss is caused, the cavity loss of the laser is larger, the key performance (such as threshold current, output power and the like) of the chips is inferior to that of the laser chips lighted by the first ridge stripe, and the non-uniformity of the performance of the chips in the same batch is caused.
Disclosure of Invention
The invention provides a DFB laser chip with graded ridge waveguides at two ends, which mainly aims to solve the problems in the prior art.
The invention adopts the following technical scheme:
a DFB laser chip with graded ridge waveguides at both ends comprises a first laser cavity and a second laser cavity which are arranged above a substrate at intervals;
two end surfaces of the first laser cavity along the y direction are a first HR coating cleavage surface and a first AR coating cleavage surface respectively; two end surfaces of the second laser cavity along the y direction are a second HR coating cleavage surface and a second AR coating cleavage surface respectively;
the first laser cavity and the second laser cavity are respectively provided with a first ridge and a second ridge which are uniformly and strip-shaped and extend along the y direction;
the first ridge is gradually changed to form a first HR gradual change section with gradually increased width at the position close to the cleavage surface of the first HR coating, and is gradually changed to form a first AR gradual change section with gradually reduced width at the position close to the cleavage surface of the first AR coating;
and the second ridge is gradually changed to form a second HR gradual change section with gradually reduced width at a position close to the cleavage surface of the second HR coating, and is gradually changed to form a second AR gradual change section with gradually reduced width at a position close to the cleavage surface of the second AR coating.
Further, the length of the first HR transition section along the y direction is L 11 The length of the second HR transition section along the y direction is L 21 ， L 11 And L 21 The calculation formula of (2) is
Wherein:
is the emission wavelength of the device; />
An effective refractive index in a central region of the first ridge and the second ridge; />
An effective refractive index in the first HR graded region; />
Is the effective refractive index in the second HR graded region.
Still further, the L 11 The value range of (2) is more than 0 and less than L 11 ＜0.2L 0 The L is 21 The value range of (2) is more than 0 and less than L 21 ＜0.2L 0 Wherein L is 0 Is the length of the first ridge and the second ridge.
Further, the width of the end part of the first HR transition section is W 11 And W is 0 ＜W 11 ＜3W 0 Wherein W is 0 Is the middle width of the first ridge; the width of the end part of the second HR gradual change section is W 21 And W is 21 ＜0.5μm。
Further, the length of the first AR transition section along the y direction is equal to the length of the first HR transition section along the y direction; the length of the second AR transition section along the y direction is equal to the length of the second HR transition section along the y direction.
Further, the end width of the first AR transition section is W 12 And W is 12 Less than 1 μm; the width of the end part of the second AR graded section is W 22 And W is 22 ＜1μm。
Further, the distance between the first ridge and the second ridge is S, and the value range is: s is more than or equal to 5 mu m and less than or equal to L W μm, where L W Is the length of the DFB laser chip in the x-direction.
Further, the epitaxial structures of the first laser cavity and the second laser cavity sequentially comprise a buffer layer, a lower limiting layer, a quantum well layer, an upper limiting layer, a grating layer and a contact layer from bottom to top; the first ridge and the second ridge are etched from the contact layer to the upper limiting layer.
Further, the grating layer is fabricated using holographic exposure lithography.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention etches the first ridge and the second ridge which are arranged at intervals on the surface of the epitaxial layer of the DFB laser chip, and matches the first ridge and the second ridgeThe first HR gradual change section and the second HR gradual change section with opposite width change trend are arranged, so that the end face reflectivity of the first ridge strip at the cleavage face of the first HR coating is compared with that of the second ridge strip at the cleavage face of the second HR coating
When any one of the two ridges works in a dual-mode state, the other ridge can deviate from a phase region of dual-mode operation and is necessarily in single-longitudinal mode operation, so that the DFB laser chip has higher SMSR and Shan Moliang rate can reach 100%. Therefore, the invention can achieve the purpose of improving the single longitudinal mode yield in the process of manufacturing the batched tube cores, effectively avoids the loss of the single mode yield after the processes of epitaxy, grating manufacture, secondary epitaxy, front/back path, cleavage and AR/HR coating, greatly improves the production efficiency of the DFB chip and reduces the production cost.
2. In the invention
The phase shifts are respectively generated by the first HR transition>
Is generated by the second HR transition>
The phase shift of the first HR transition section and the second HR transition section are realized together, the change trend of the first HR transition section and the second HR transition section are uniform and complementary, so the loss generated by the first HR transition section and the second HR transition section is equivalent and is obviously smaller than the loss generated by a scheme of suddenly widening a single ridge in the prior art, and the uniformity and the consistency of the performance of chips in the same batch are better. />
3. According to the invention, the first AR gradient section and the second AR gradient section with gradually reduced widths are configured, so that the device can realize circular light spot output, and optical fiber coupling is easy.
4. Compared with a mode of adopting a refractive index coupling type phase shift grating to solve dual-mode operation, the method does not need to manufacture a complex phase shift grating; compared with a mode of adopting gain or loss coupling type gratings to solve dual-mode operation, the method does not need to manufacture gain or loss coupling type gratings with lower performance reliability and complex process steps; compared with a mode of adopting a passive Bragg grating to solve dual-mode operation, the invention does not relate to a monolithic integration process of active and passive waveguides. Compared with the prior art, the invention has the advantages of high device reliability, simple production process, low manufacturing cost and the like.
5. In the aspect of grating manufacture, the invention adopts holographic exposure lithography to manufacture the grating, and compared with electron beam lithography, the holographic exposure lithography has the advantages of short manufacturing period, easy manufacture of large area, low cost and the like.
Drawings
Fig. 1 is a top view of a DFB laser chip according to the present invention.
Fig. 2 is a schematic structural view of a first ridge and a second ridge in the present invention.
Fig. 3 is a schematic diagram of an epitaxial structure of a DFB laser chip according to the present invention.
In the figure:
1. a DFB laser chip; 10. a first laser cavity; 11. a second laser cavity; 12. a first ridge; 121. a first HR transition; 122. a first AR transition segment; 13. a second ridge; 131. a second HR transition; 132. a second AR transition segment; 14. a first contact electrode; 15. a second contact electrode; 16. a first HR coating cleavage plane; 17. a first AR coating cleavage face; 18. a second HR coating cleavage plane; 19. a second AR coating cleavage face; 21. an n-InP substrate; 22. an n-InP buffer layer; 23. a lower confinement layer; 24. a quantum well layer; 25. an upper confinement layer; 26. a grating layer; 27. and a contact layer.
Detailed Description
Specific embodiments of the present invention will be described below with reference to the accompanying drawings. Numerous details are set forth in the following description in order to provide a thorough understanding of the present invention, but it will be apparent to one skilled in the art that the present invention may be practiced without these details.
As shown in fig. 1 to 3, the present invention provides a DFB laser chip 1 with graded ridge waveguides at both ends, which includes an n-InP substrate 21 and two first laser cavities 10 and second laser cavities 11 formed above the n-InP substrate 21 and arranged at intervals, and the epitaxial structure of each laser cavity is a ridge waveguide structure, which includes, in order from bottom to top, an n-InP buffer layer 22, a lower confinement layer 23, a quantum well layer 24, an upper confinement layer 25, a grating layer 26, and a contact layer 27. The material design of each layer in this embodiment is as follows:
the n-InP substrate 21 has a thickness of 350 μm, a doping atom of Si and a doping concentration of 3e 18 cm -3 ；
The n-InP buffer layer 22 has a thickness of 400nm, a doping atom of Si and a doping concentration of 1e 18 cm -3 ；
The lower confinement 23 is from bottom to top for undoped InGaAsP having a bandgap wavelength of 1050nm, undoped InGaAsP having a bandgap wavelength of 1100nm, undoped InGaAsP having a bandgap wavelength of 1150nm, and undoped InGaAsP having a bandgap wavelength of 1200nm, each layer having a thickness of 50nm;
the quantum well layer 24 is an InGaAsP quantum well with 6 pairs of well layers of 1% compressive strain and 2% tensile strain, and the lasing wavelength is 1310nm;
the upper confinement layer 25 is from bottom to top InGaAsP with undoped bandgap wavelength of 1200nm, inGaAsP with undoped bandgap wavelength of 1150nm, inGaAsP with undoped bandgap wavelength of 1100nm and InGaAsP with undoped bandgap wavelength of 1050nm, each layer having thickness of 37nm;
grating layer 26 is an InP buried undoped InGaAsP grating layer with a 1200nm band gap wavelength, which is a grating period
A uniform grating of 204.7nm, the grating layer 26 can select the longitudinal mode of the laser to realize single longitudinal mode output of the laser; in actual production, holographic exposure lithography, nanoimprint lithography, electron beam lithography or the like can be adopted to manufacture uniform gratings, and the embodiment is preferably a holographic exposure lithography technology, and compared with electron beam lithography, the holographic exposure lithography has the advantages of short manufacturing period, easiness in manufacturing large area, low cost and the like;
the contact layer 27 is InGaAs, the contact layer 27 is directly connected to an electrode layer, and the material of the electrode layer may be conductive metal.
As shown in fig. 1 and 2, both end surfaces of the first laser cavity 10 in the y direction are a first HR coating cleavage surface 16 and a first AR coating cleavage surface 17, respectively; the second laser cavity 11 has two end surfaces in the y direction, which are a second HR coating cleavage surface 18 and a second AR coating cleavage surface 19, respectively.
As shown in fig. 1 to 3, the first laser cavity 10 has a first ridge 12 extending in the y-direction in a uniform stripe shape; the second laser cavity 11 has a second ridge 13 extending in the y-direction in a uniform stripe shape; the first ridge 12 and the second ridge 13 are etched from the contact layer 27 to the upper confinement layer 25, and the first ridge 12 is provided with a first contact electrode 14 on the surface and the second ridge 13 is provided with a second contact electrode 15 on the surface.
As shown in fig. 1 and 2, the main innovation of the present invention is: the first ridge stripe 12 is gradually changed to form a first HR gradual change section 121 with gradually increased width near the first HR coating cleavage surface 16, and is gradually changed to form a first AR gradual change section 122 with gradually reduced width near the first AR coating cleavage surface 17; the second ridge 13 is tapered to form a second HR taper 131 of progressively smaller width near the second HR coating cleavage face 18 and a second AR taper 132 of progressively smaller width near the second AR coating cleavage face 19.
As shown in fig. 1 and 2, the relevant design parameters of the present embodiment are:
(1) Size of DFB laser chip (L W ×L H ) The length L of the first ridge stripe 12 and the second ridge stripe 13 along the y direction is 250 μm multiplied by 250 μm 0 (i.e., the lengths in the y-direction of the first laser cavity 10 and the second laser cavity 11) are both 250 μm; middle width W of first ridge 12 and second ridge 13 0 Are all 1.6 μm; the distance S between the first laser cavity 10 and the second laser cavity 11 is 20 μm.
(2) The first invention concept of the invention is that by configuring the first HR graded segment 121, the end surface reflectivity of the graded first ridge stripe 12 at the first HR coating cleavage surface 16 is provided with the following relation to the end surface reflectivity of the graded first ridge stripe 12 at the first HR coating cleavage surface 16
Phase of (2)Moving and configuring the second HR transition 131 so that the end surface reflectivity of the second ridge 13 after the transition at the second HR coating cleavage plane 18 has ∈r as compared with the end surface reflectivity of the second ridge 13 before the transition at the second HR coating cleavage plane 18>
Thereby ultimately allowing the reflectivity of the first laser cavity 10 at the first HR coating cleavage face 16 to be +_ in comparison with the reflectivity of the second laser cavity 11 at the second HR coating cleavage face 18>
Phase shift. When either of the two laser cavities is operated in the dual mode, the other can be separated from the phase region of dual mode operation because of the relative phase shift difference, and must be operated in a single longitudinal mode.
Based on this, the length L of the first HR transition 121 11 And length L of the second HR transition 131 21 The following conditions should be satisfied at the time of design:
wherein:
is the emission wavelength of the device; />
Indicating the effective index of refraction in the central region of the first ridge 12 and the second ridge 13; />
Representing the effective refractive index in the region of the first HR transition 121; />
Representing the effective refraction in the region of the second HR transition 131The rate.
In the present embodiment
1.31 μm,/d>
About 3.2 @, @>
And->
About 3.208, thus, by simulation calculation,/-Can be known>
And->
The value of (2) is about 20. Mu.m.
In order to ensure that the structural designs of the first ridge stripe 12 and the second ridge stripe 13 are reasonable and reliable, after repeated experiments, the following rules can be obtained: l (L) 11 The value range of (2) is more than 0 and less than L 11 ＜0.2L 0 ，L 21 The value range of (2) is more than 0 and less than L 21 ＜0.2L 0 . It is verified that the simulation calculation is obtained
And->
The value of (2) is within a reasonable range, and meets the design requirement.
(3) Based on the above
And->
The following rules can be obtained through repeated experiments: end width W of the first HR transition 121 11 The value range of (2) is W 0 ＜W 11 ＜3W 0 End width W of the second HR transition 131 21 The value range of (2) is W 21 Less than 0.5 μm, thus ensuring that the device does not generate multiple transverse modes, and ensuring that the HR end reflectivities of the first laser cavity 10 and the second laser cavity 11 are +.>
Phase shift. W in the present embodiment 11 Preferably 3.2 μm, W 21 Preferably 0.3 μm.
(4) The second inventive concept of the present invention is to enable a device to realize a circular spot output by configuring the first AR graded segment 122 and the second AR graded segment 132. The laser chip generates optical gain in the active area, and laser light is reflected back and forth for many times through the end face of the ridge waveguide HR/AR to finally realize laser irradiation from the AR end. The thickness of conventional semiconductor laser waveguides is typically limited to within 1 μm, with the divergence angle of the output beam in the vertical direction being about 40 ° and the divergence angle in the horizontal direction being about 10 °. This results in a spot width in the vertical direction in the far field direction that is much larger than the spot width in the horizontal direction, i.e. the spot is highly asymmetric. Therefore, the AR gradual change section with gradually reduced width is arranged at the position close to the cleavage surface of the AR coating, so that the divergence angles of the output light beams in the vertical and horizontal directions are mutually close, and the output of the circular light spots is realized. Based on the above principles, the design parameters of the first and second AR transitions 122 and 132 may be defined as follows: length L of first AR transition 122 12 Equal to the length L of the first HR transition 121 11 Length L of the second AR transition 132 22 Equal to the length L of the second HR transition 131 21 The method comprises the steps of carrying out a first treatment on the surface of the The end width of the first AR transition 122 is W 12 And W is 12 Less than 1 μm; the second AR transition 132 has an end width W 22 And W is 22 < 1 μm. In the present embodiment, W 12 And W is 22 And is preferably 0.6. Mu.m.
As shown in fig. 1 and 2, the operation of the DFB laser chip provided by the present invention is described as follows: current is first injected from the first contact electrode 14 and the second contact electrode 15, respectively, and then the spectra output by the first laser cavity 10 and the second laser cavity 11 at the first AR coating cleavage face 17 and the second AR coating cleavage face 19 are detected, respectively. When one of the laser cavities is operated in dual mode, the other laser cavity must be operated in single longitudinal mode. Then, the electrode on the ridge stripe capable of generating a single longitudinal mode operation is determined as the final operation electrode, and current injection into the laser chip at the time of actual operation is completed.
The practice shows that the DFB laser chip produced by adopting the inventive concept of the embodiment can ensure that one of the two laser cavities realizes single longitudinal mode operation, thereby improving the Shan Moliang rate of the chip, achieving the purpose of improving the single longitudinal mode yield in the process of manufacturing the batched tube cores, effectively avoiding the loss of the single mode yield after the processes of epitaxy, grating manufacture, secondary epitaxy, front/back, cleavage and AR/HR coating, greatly improving the production efficiency of the DFB chip and reducing the production cost.
To more clearly demonstrate the technical effects of the present invention, the following performance contrast analysis was performed with the common single waveguide DFB laser common in the prior art and the dual waveguide DFB laser disclosed in patent application No. 201410415953.4 as comparison objects:
firstly, setting a chip 1 as a common single waveguide DFB laser; chip 2 is a dual waveguide DFB laser disclosed in patent application number 201410415953.4; the chip 3 is a DFB laser chip provided by the invention, wherein both ends of the chip are provided with graded ridge waveguides.
Chip 1: assuming that 100 chips 1 can be produced from one wafer, according to the prior art, the single-mode yield of the chips 1 is 40%, so that 40 laser chips realizing a single longitudinal mode can be produced in total. Since the chip 1 is a uniform ridge waveguide structure, it can be further assumed that there is no cavity loss in all of the 40 chips, its output power is 100mW, and the threshold current is 10mA.
Chip 2: assuming that 100 chips 2 can be produced by one wafer, according to the patent document, the single-mode yield cannot be 100% by the scheme, but only the theoretical single-longitudinal-mode yield can be doubled, so that 80 laser chips realizing the single longitudinal mode can be produced in total assuming that the Shan Moliang rate is 80%. Of the 80, 50% by probability were the first ridge (uniform ridge) and the other 50% were the second ridge (non-uniform ridge). Further, assuming that there is no cavity loss in the first ridge stripe, the cavity loss of the laser caused by abrupt widening at the back end surface of the second ridge stripe is 10%, the output power of 40 laser chips electrically lighted by the first ridge stripe is 100mW, the threshold current is 10mA, and the output power of the other 40 laser chips lighted by the second ridge stripe is 90mW, and the threshold current is 11.11mA.
Chip 3: it is assumed that one wafer can produce 100 chips 3, and practice proves that the single-mode yield can be 100%, so that it is assumed that the wafer can produce 100 laser chips realizing a single longitudinal mode. Of these 100, 50% by probability were the first ridge (graded widening) operation and the other 50% were the second ridge (graded narrowing) operation. Since the first ridge stripe and the second ridge stripe are gradually changed at the same time and the gradual change trends are even and complementary, it can be further reasonably assumed that the cavity losses generated by the gradual change of the two ridge stripes are all 4%, the output power of 50 laser chips electrically lightened by the first ridge stripe is 96mW, the threshold current is 10.42mA, the output power of the other 50 laser chips lightened by the second ridge stripe is 96mW, and the threshold current is 10.42mA.
The performance comparison results of chip 1, chip 2 and chip 3 are shown in table 1:
as can be seen from Table 1, the dual waveguide DFB laser chip provided by the invention can improve the single longitudinal mode yield and ensure the uniformity and stability of the output power, threshold current and other chip performances of the two laser cavities, thereby effectively improving the uniformity and mass production consistency of the chip.
It should be noted that the epitaxial structure provided in this embodiment is not limited by a unique structure, and may be designed reasonably according to practical requirements during application, for example, the substrate may be GaAs, gaN, inP or GaSb material; the active region gain structure can be a single quantum well, a multiple quantum well, a tunnel junction cascade quantum well, a quantum cascade or a quantum dot; grating layer 26 may be a striped grating of equal doping levels or a graded index grating of different doping levels, and may be a buried, semiconductor buried or metal buried structure. In addition, in this embodiment, the profile of the first HR transition 121, the first AR transition 122, the second HR transition 131, and the second AR transition 132 is a tapered transition, and in practical application, may be designed as an arc transition.
The foregoing is merely a specific embodiment of the present invention, but the design concept of the present invention is not limited thereto. The design concept of the invention is utilized to make insubstantial changes on the invention, which belongs to the behavior of infringement of the protection scope of the invention.
Claims (9)
1. A DFB laser chip with graded ridge waveguides at both ends, characterized by:
comprises a first laser cavity and a second laser cavity which are arranged above a substrate at intervals;
two end surfaces of the first laser cavity along the y direction are a first HR coating cleavage surface and a first AR coating cleavage surface respectively; two end surfaces of the second laser cavity along the y direction are a second HR coating cleavage surface and a second AR coating cleavage surface respectively;
the first laser cavity and the second laser cavity are respectively provided with a first ridge and a second ridge which are uniformly and strip-shaped and extend along the y direction;
the first ridge is gradually changed to form a first HR gradual change section with gradually increased width at the position close to the cleavage surface of the first HR coating, and is gradually changed to form a first AR gradual change section with gradually reduced width at the position close to the cleavage surface of the first AR coating;
and the second ridge is gradually changed to form a second HR gradual change section with gradually reduced width at a position close to the cleavage surface of the second HR coating, and is gradually changed to form a second AR gradual change section with gradually reduced width at a position close to the cleavage surface of the second AR coating.
2. A DFB laser chip with a graded ridge waveguide at both ends as defined in claim 1, wherein: the length of the first HR transition section along the y direction is L 11 The length of the second HR transition section along the y direction is L 21 ， L 11 And L 21 The calculation formula of (2) is as follows:
wherein:
is the emission wavelength of the device; />
An effective refractive index in a central region of the first ridge and the second ridge; />
An effective refractive index in the first HR graded region; />
Is the effective refractive index in the second HR graded region.
3. A DFB laser chip with a graded ridge waveguide at both ends as defined in claim 2, wherein: the L is 11 The value range of (2) is more than 0 and less than L 11 ＜0.2L 0 The L is 21 The value range of (2) is more than 0 and less than L 21 ＜0.2L 0 Wherein L is 0 Is the length of the first ridge and the second ridge in the y direction.
4. A DFB laser chip with a graded ridge waveguide at both ends as defined in claim 3, wherein: the width of the end part of the first HR gradual change section is W 11 And W is 0 ＜W 11 ＜3W 0 Wherein W is 0 Is the middle width of the first ridge; the width of the end part of the second HR gradual change section is W 21 And W is 21 ＜0.5μm。
5. A DFB laser chip with a graded ridge waveguide at both ends as defined in claim 1, wherein: the length of the first AR transition section along the y direction is equal to the length of the first HR transition section along the y direction; the length of the second AR transition section along the y direction is equal to the length of the second HR transition section along the y direction.
6. A DFB laser chip with a graded ridge waveguide at both ends as defined in claim 1, wherein: the width of the end part of the first AR graded section is W 12 And W is 12 Less than 1 μm; the width of the end part of the second AR graded section is W 22 And W is 22 ＜1μm。
7. A DFB laser chip with a graded ridge waveguide at both ends as defined in claim 1, wherein: the distance between the first laser cavity and the second laser cavity is S, and the range of the distance is as follows: s is more than or equal to 5 mu m and less than or equal to L W μm, where L W Is the length of the DFB laser chip in the x-direction.
8. A DFB laser chip with a graded ridge waveguide at both ends as defined in claim 1, wherein: the epitaxial structures of the first laser cavity and the second laser cavity sequentially comprise a buffer layer, a lower limiting layer, a quantum well layer, an upper limiting layer, a grating layer and a contact layer from bottom to top; the first ridge and the second ridge are etched from the contact layer to the upper limiting layer.
9. A DFB laser chip with a graded ridge waveguide at both ends as defined in claim 8, wherein: and manufacturing the grating layer by adopting a holographic exposure lithography technology.
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