CN115864135A - DFB laser chip with gradually-changed ridge waveguides at two ends - Google Patents
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Abstract
The invention discloses a DFB laser chip with gradually-changed ridge waveguides at two ends, which relates to the technical field of DFB laser chips and comprises a first laser cavity with a first ridge and a second laser cavity with a second ridge, wherein the first laser cavity is provided with a first ridge; the first ridge gradually forms a first HR gradual change section with gradually increasing width close to the cleavage surface of the first HR coating, and gradually forms a first AR gradual change section with gradually decreasing width close to the cleavage surface of the first AR coating; the second ridge tapers to a second HR taper of decreasing width proximate the second HR coating cleavage plane and to a second AR taper of decreasing width proximate the second AR coating cleavage plane. According to the invention, the arrangement of the first HR gradual change section and the second HR gradual change section enables the device to have higher SMSR, the single-mode yield can reach 100%, and the uniformity and consistency of the chip performance are better; and the arrangement of the first AR transition section and the second AR transition section enables the device to realize circular facula output, and is easy for optical fiber coupling.
Description
Technical Field
The invention relates to the technical field of DFB laser chips, in particular to a DFB laser chip with gradually-changed ridge waveguides at two ends.
Background
Distributed Feedback (DFB) laser chips have been widely used in the fields of optical communication systems, optical measurement technology, optical storage technology, optical information processing technology, and the like. Compared with a Fabry-Perot (FP) laser which intensively feeds back through two end faces, the DFB laser chip adopts a built-in grating to realize distributed feedback of light. For the most simple to fabricate index-coupled uniform grating DFB laser, there are two modes with the same and lowest loss (degenerate modes) at the edges of the two ends of the Bragg stop-band. Thus, this type of laser is intrinsically dual-mode lasing. The ability to operate in a single longitudinal mode, and the high Side Mode Suppression Ratio (SMSR) are key performance characteristics of DFB lasers.
Chinese patent application No. 201410415953.4 discloses a ridge waveguide distributed feedback semiconductor laser with high single longitudinal mode yield, which comprises a first ridge and a second ridge, wherein the first ridge is of uniform strip structure, the second ridge has a section of widening part along y direction at the position close to the back end face, and the widening part can be equivalently arranged at L P Relative to the first ridge
The phase shift can improve the theoretical single longitudinal mode yield of the device by one time. However, this solution has the following problems: firstly, the scheme can only realize that the theoretical single longitudinal mode yield is doubled, but cannot realize that the single mode yield reaches 100 percent, so the problem of the prior art cannot be thoroughly solved; second, the laser chip lighted by the second ridgeThe abrupt widening at the back end face causes scattering loss of light, which results in larger cavity loss of the laser, and the key performance of the chip (such as threshold current and output power) is inferior to that of the laser chip lighted by the first ridge, which causes non-uniformity of the performance of the same batch of chips.
Disclosure of Invention
The invention provides a DFB laser chip with tapered ridge waveguides at two ends, and mainly aims to solve the problems in the prior art.
The invention adopts the following technical scheme:
a DFB laser chip with two ends provided with gradient ridge waveguides comprises a first laser cavity and a second laser cavity which are arranged above a substrate at intervals;
two end faces of the first laser cavity along the y direction are respectively a first HR coating cleavage face and a first AR coating cleavage face; two end faces of the second laser cavity along the y direction are a second HR coating cleavage face and a second AR coating cleavage face respectively;
the first laser cavity and the second laser cavity are respectively provided with a first ridge and a second ridge which extend in a uniform strip shape along the y direction;
the first ridge gradually forms a first HR gradual change section with gradually increased width at the position close to the first HR coating cleavage plane, and gradually forms a first AR gradual change section with gradually decreased width at the position close to the first AR coating cleavage plane;
the second ridge gradually forms a second HR gradually-changed section with gradually-reduced width close to the second HR coating cleavage plane, and gradually forms a second AR gradually-changed section with gradually-reduced width close to the second AR coating cleavage plane.
Further, the length of the first HR gradual change section along the y direction is L 11 The length of the second HR gradual change section along the y direction is L 21 ， L 11 And L 21 Is calculated by the formula
Wherein:
is the emission wavelength of the device; />
Is the effective index of refraction in the middle region of the first ridge and the second ridge; />
Is the effective refractive index in the region of the first HR transition segment; />
Is the effective index in the second HR transition region.
Further, said L 11 Has a value range of 0 < L 11 ＜0.2L 0 Said L is 21 Has a value range of 0 < L 21 ＜0.2L 0 Wherein L is 0 Is the length of the first ridge and the second ridge.
Further, the width of the end of the first HR transition is W 11 And W is 0 ＜W 11 ＜3W 0 Wherein W is 0 Is the width of the middle part of the first ridge; the width of the end part of the second HR gradually-changing section is W 21 And W is 21 ＜0.5μm。
Further, the length of the first AR transition in the y-direction is equal to the length of the first HR transition in the y-direction; the length of the second AR transition in the y-direction is equal to the length of the second HR transition in the y-direction.
Further, the first AR transition has an end width W 12 And W is 12 Less than 1 μm; the second AR transition has an end width W 22 And W is 22 ＜1μm。
Further, the distance between the first ridge and the second ridge is S, and the value range is as follows: s is more than or equal to 5 mu m and less than or equal to L W μ m, wherein L W Is the length of the DFB laser chip in the x-direction.
Further, the epitaxial structures of the first laser cavity and the second laser cavity sequentially comprise a buffer layer, a lower limiting layer, a quantum well layer, an upper limiting layer, a grating layer and a contact layer from bottom to top; the first ridge and the second ridge are etched from the contact layer to the upper limiting layer.
Furthermore, the grating layer is manufactured by adopting a holographic exposure photoetching technology.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the first ridge and the second ridge which are arranged at intervals are etched on the surface of the epitaxial layer of the DFB laser chip, and the first HR gradual change section and the second HR gradual change section which have opposite width change trends are configured for the first ridge and the second ridge, so that the end face reflectivity of the first ridge on the cleavage surface of the first HR coating is compared with the end face reflectivity of the second ridge on the cleavage surface of the second HR coating
When any one of the two ridges works in a double-mode state, the other ridge can be separated from a phase area of the double-mode working and is necessarily operated in a single longitudinal mode, so that the DFB laser chip has higher SMSR and the single-mode yield can reach 100 percent. Therefore, the method can achieve the purpose of improving the yield of the single longitudinal mode during batch tube core manufacturing, effectively avoids the loss of the single mode yield after the processes of epitaxy, grating manufacturing, secondary epitaxy, front/back pass, cleavage and AR/HR coating, greatly improves the production efficiency of the DFB chip and reduces the production cost.
2. In the present invention
The phase shift is respectively generated by the first HR transition->
And is generated by a second HR ramp>
Is realized jointly, the first HR gradually increasesThe trends of the change and the second HR gradual change are uniform and complementary, so the losses generated by the two are equivalent and much smaller than the losses generated by the single ridge sudden widening scheme in the prior art, and the uniformity and consistency of the chip performance of the same batch are better. />
3. According to the invention, the device can realize circular light spot output by configuring the first AR gradient section and the second AR gradient section with gradually reduced widths, and the optical fiber coupling is easy.
4. Compared with the mode of adopting the refractive index coupling type phase shift grating to solve the dual-mode work, the invention does not need to manufacture the complex phase shift grating; compared with the mode of adopting the gain or loss coupling type grating to solve the dual-mode work, the invention does not need to manufacture the gain or loss coupling type grating with lower performance reliability and complex process steps; compared with the mode of adopting the passive Bragg grating to solve the dual-mode work, the invention does not relate to the monolithic integration process of the active waveguide and the passive waveguide. Therefore, compared with the prior art, the invention has the advantages of high device reliability, simple production process, low manufacturing cost and the like.
5. In the aspect of grating manufacture, the invention adopts holographic exposure lithography to manufacture the grating, and compared with electron beam lithography, the holographic exposure lithography has the advantages of short manufacturing period, easy manufacture, large area, low cost and the like.
Drawings
Fig. 1 is a top view of a DFB laser chip of the present invention.
Fig. 2 is a schematic structural view of the first ridge and the second ridge in the present invention.
Fig. 3 is a schematic view of an epitaxial structure of a DFB laser chip according to the present invention.
In the figure:
1. a DFB laser chip; 10. a first laser cavity; 11. a second laser cavity; 12. a first ridge stripe; 121. a first HR transition segment; 122. a first AR transition; 13. a second ridge stripe; 131. a second HR transition; 132. a second AR transition; 14. a first contact electrode; 15. a second contact electrode; 16. a first HR coating cleaved surface; 17. a first AR coating cleavage plane; 18. a second HR coating cleaved surface; 19. a second AR coating cleavage plane; 21. an n-InP substrate; 22. an n-InP buffer layer; 23. a lower confinement layer; 24. a quantum well layer; 25. an upper confinement layer; 26. a grating layer; 27. and a contact layer.
Detailed Description
The following describes embodiments of the present invention with reference to the drawings. Numerous details are set forth below in order to provide a thorough understanding of the present invention, but it will be apparent to those skilled in the art that the present invention may be practiced without these details.
As shown in fig. 1 to 3, the DFB laser chip 1 with tapered ridge waveguides at two ends includes an n-InP substrate 21, and two first laser cavities 10 and two second laser cavities 11 formed above the n-InP substrate 21 and spaced from each other, where the epitaxial structure of each laser cavity is a ridge waveguide structure, and the laser cavity sequentially includes an n-InP buffer layer 22, a lower limiting layer 23, a quantum well layer 24, an upper limiting layer 25, a grating layer 26, and a contact layer 27 from bottom to top. The material design of each layer in this example is as follows:
the n-InP substrate 21 has a thickness of 350 μm, doping atoms of Si and a doping concentration of 3e 18 cm -3 ；
The n-InP buffer layer 22 has a thickness of 400nm, doping atoms of Si and a doping concentration of 1e 18 cm -3 ；
The lower limit 23 comprises undoped InGaAsP with a band gap wavelength of 1050nm, undoped InGaAsP with a band gap wavelength of 1100nm, undoped InGaAsP with a band gap wavelength of 1150nm and undoped InGaAsP with a band gap wavelength of 1200nm from bottom to top, and the thickness of each layer is 50nm;
the quantum well layer 24 is an InGaAsP quantum well with 1% compressive strain for 6 pairs of well layers and 2% tensile strain for barrier layers, and the lasing wavelength is 1310nm;
the upper limiting layer 25 comprises InGaAsP with undoped band gap wavelength of 1200nm, inGaAsP with undoped band gap wavelength of 1150nm, inGaAsP with undoped band gap wavelength of 1100nm and InGaAsP with undoped band gap wavelength of 1050nm from bottom to top, and the thickness of each layer is 37nm;
the grating layer 26 is an InP buried InGaAsP grating layer with undoped band gap wavelength of 1200nm and a grating period
A uniform grating layer 26 with a wavelength of =204.7nm can select a longitudinal mode of the laser, so that single longitudinal mode output of the laser is realized; in actual production, holographic exposure lithography, nanoimprint lithography, electron beam lithography and the like can be adopted for manufacturing uniform gratings, the embodiment preferably adopts the holographic exposure lithography technology, and compared with the electron beam lithography, the holographic exposure lithography has the advantages of short manufacturing period, easiness in manufacturing large area, low cost and the like;
the contact layer 27 is InGaAs, the contact layer 27 is directly connected to the electrode layer, and the material of the electrode layer may be a conductive metal.
As shown in fig. 1 and 2, the two end faces of the first laser cavity 10 in the y-direction are a first HR coating cleave plane 16 and a first AR coating cleave plane 17, respectively; the two end faces of the second laser cavity 11 in the y-direction are a second HR coating cleave plane 18 and a second AR coating cleave plane 19, respectively.
As shown in fig. 1 to 3, the first laser cavity 10 has a first ridge 12 extending in the y-direction in a uniform stripe shape; the second laser cavity 11 has a second ridge 13 extending in the y-direction in a uniform stripe; the first ridge 12 and the second ridge 13 are etched from the contact layer 27 to the upper limiting layer 25, and the surface of the first ridge 12 is provided with the first contact electrode 14, and the surface of the second ridge 13 is provided with the second contact electrode 15.
As shown in fig. 1 and fig. 2, the main innovation points of the present invention are: the first ridge 12 tapers to a first HR taper 121 of increasing width proximate the first HR-coating cleavage plane 16 and a first AR taper 122 of decreasing width proximate the first AR-coating cleavage plane 17; the second ridge 13 tapers to a second HR taper 131 having a decreasing width proximate the second HR-coating cleavage plane 18 and a second AR taper 132 having a decreasing width proximate the second AR-coating cleavage plane 19.
As shown in fig. 1 and fig. 2, the relevant design parameters of the present embodiment are:
(1) Size (L) of DFB laser chip W ×L H ) 250 μm × 250 μm, arranged with a length L of the first ridge 12 and the second ridge 13 in the y direction 0 (i.e., the length of the first laser cavity 10 and the second laser cavity 11 in the y-direction) are both 250 μm; the width W of the middle of the first ridge 12 and the second ridge 13 0 All are 1.6 μm; the distance S between the first laser cavity 10 and the second laser cavity 11 is 20 μm.
(2) The primary inventive concept of the present invention is to provide the first HR taper 121 such that the end face reflectivity of the first ridge 12 at the first HR-coating cleavage plane 16 after the taper is relative to the end face reflectivity of the first ridge 12 at the first HR-coating cleavage plane 16 before the taper is
And by configuring the second HR transition 131 such that the end face reflectivity of the second ridge stripe 13 at the second HR-coating cleavage plane 18 after the transition has £ relative to the end face reflectivity of the second ridge stripe 13 at the second HR-coating cleavage plane 18 before the transition>
Thereby ultimately causing the reflectivity of the first laser cavity 10 at the first HR-coating cleaving facet 16 to be present/present in comparison to the reflectivity of the second laser cavity 11 at the second HR-coating cleaving facet 18>
The phase shift. When either of the two laser cavities is operating in a dual-mode state, the other can drop out of the phase region of dual-mode operation because of the relative phase shift difference, and must be operating in a single longitudinal mode.
Based on this, the length L of the first HR transition 121 11 And the length L of the second HR transition 131 21 The following conditions should be satisfied in the design:
wherein:
is the emission wavelength of the device; />
Represents the effective index of refraction in the central region of the first and second ridges 12 and 13; />
Represents the effective index in the region of the first HR transition 121; />
Representing the effective index in the region of the second HR transition 131.
In this embodiment
Is 1.31 μm, based on the total weight of the blood>
About 3.2, $ g>
And &>
About 3.208, and therefore, as determined by analog calculations, is greater than or equal to>
And &>
Is about 20 μm.
In order to ensure that the structural design of the first ridge 12 and the second ridge 13 is reasonable and reliable, the following rules can be obtained after repeated experiments: l is a radical of an alcohol 11 Has a value range of 0 < L 11 ＜0.2L 0 ，L 21 Has a value range of 0 < L 21 ＜0.2L 0 . Through verification, the above analog calculation is obtained
And &>
The value of (A) is in a reasonable range, and meets the design requirement.
(3) Based on the above
And &>
The following rules can be obtained through repeated experiments according to the design requirements: end width W of first HR transition 121 11 Has a value range of W 0 ＜W 11 ＜3W 0 End width W of second HR transition 131 21 Has a value range of W 21 Less than 0.5 μm, thereby ensuring that the device does not generate multiple transverse modes and ensuring that the HR end reflectivity of the first laser cavity 10 and the second laser cavity 11 is realized>
The phase shift. In this example W 11 Preferably 3.2 μm, W 21 Preferably 0.3 μm.
(4) The second inventive concept of the present invention is to make the device achieve a circular spot output by configuring the first AR transition 122 and the second AR transition 132. The laser chip generates light gain in the active region, and laser is reflected back and forth for multiple times by the HR/AR end face of the ridge waveguide and finally is subjected to laser emission from the AR end. The thickness of a conventional semiconductor laser waveguide is typically limited to within 1 μm, with the divergence angle of the output beam being about 40 ° in the vertical direction and about 10 ° in the horizontal direction. This results in a spot width in the vertical direction in the far field direction that is much larger than the spot width in the horizontal direction, i.e. the spot is highly asymmetric. Therefore, the invention is provided with the AR gradual change section with gradually reduced width at the position close to the AR coating cleavage surface, so that the divergence angles of the output light beam in the vertical and horizontal directions are close to each other, and the output of the circular light spot is realized. Based on the above principles, the design parameters of the first and second AR transitions 122, 132 may be defined as follows: length L of first AR transition 122 12 Equal to the length L of the first HR transition 121 11 Length L of the second AR transition 132 22 Equal to the second HR rampLength L of segment 131 21 (ii) a The first AR transition 122 has an end width W 12 And W is 12 Less than 1 μm; the end width of the second AR transition 132 is W 22 And W is 22 Is less than 1 μm. In this example, W 12 And W 22 Are preferably 0.6 μm each.
As shown in fig. 1 and 2, the operation of the DFB laser chip provided by the present invention is described as follows: current is first injected from the first contact electrode 14 and the second contact electrode 15, respectively, and then the spectra output by the first laser cavity 10 and the second laser cavity 11 at the first AR coating cleavage plane 17 and the second AR coating cleavage plane 19, respectively, are detected. When one of the laser cavities has dual-mode operation, the other laser cavity must work in a single longitudinal mode. And then determining an electrode on the ridge capable of generating single longitudinal mode operation as a final working electrode, and completing current injection to the laser chip during actual operation.
Practices show that the DFB laser chip produced by the invention can ensure that one of the two laser cavities realizes single longitudinal mode operation, so that the single mode yield of the chip is improved, the purpose of improving the single longitudinal mode yield during batch tube core manufacturing is achieved, the single mode yield loss after epitaxy, grating manufacturing, secondary epitaxy, front/back pass, cleavage and AR/HR coating process is effectively avoided, the production efficiency of the DFB chip is greatly improved, and the production cost is reduced.
In order to demonstrate the technical effect of the present invention more clearly, the following performance comparison analysis is performed by using a common single waveguide DFB laser in the prior art and a dual waveguide DFB laser disclosed in the patent with the application number 201410415953.4 as comparison objects:
firstly, setting a chip 1 as a common single-waveguide DFB laser; the chip 2 is a dual-waveguide DFB laser disclosed in the patent with the application number of 201410415953.4; the chip 3 is a DFB laser chip provided by the invention and provided with tapered ridge waveguides at two ends.
Chip 1: assuming that one wafer can produce 100 chips 1, according to the prior art, the single-mode yield of the chip 1 is 40%, so that 40 laser chips realizing a single longitudinal mode can be produced in total. Since the chip 1 has a uniform ridge waveguide structure, it can be further assumed that no cavity loss exists in the 40 chips, the output power is 100mW, and the threshold current is 10mA.
Chip 2: assuming that one wafer can produce 100 chips 2, it can be known from the patent document that the scheme cannot achieve 100% of single-mode yield, but only can achieve one-time improvement of theoretical single-longitudinal-mode yield, and therefore, assuming that the single-mode yield is 80%, 80 laser chips for achieving a single longitudinal mode can be produced in total. Of these 80, 50% of the probability is that the first ridge (uniform ridge) operates, and the other 50% operates as the second ridge (non-uniform ridge). Further, assuming that the cavity loss is absent from the first ridge and the cavity loss of the laser is 10% due to abrupt widening at the end face facing away from the second ridge, the output power of 40 of the laser chips illuminated by the first ridge is 100mW and the threshold current is 10mA, and the output power of the other 40 laser chips illuminated by the second ridge is 90mW and the threshold current is 11.11mA.
Chip 3: assuming that one wafer can produce 100 chips 3, practice proves that the single-mode yield of the invention can be 100%, and therefore, assuming that the wafer can produce 100 laser chips realizing single longitudinal mode in total. Of these 100, 50% are the first ridge (gradual widening) operation and the other 50% are the second ridge (gradual narrowing) operation, by probability. Since the first ridge and the second ridge are tapered simultaneously and the tapering trends are uniformly complementary, it is further reasonable to assume that the cavity losses generated by the tapering of the two ridges are all 4%, and then the output power of 50 laser chips illuminated by the first ridge is 96mW and the threshold current is 10.42mA, while the output power of the other 50 laser chips illuminated by the second ridge is also 96mW and the threshold current is also 10.42mA.
The results of comparing the performance of chip 1, chip 2 and chip 3 are shown in table 1:
as can be seen from table 1, the dual-waveguide DFB laser chip provided by the present invention can improve the yield of a single longitudinal mode, ensure uniform and stable chip performances such as output power and threshold current of two laser cavities, and effectively improve the uniformity and mass production consistency of the chip.
It should be noted that the epitaxial structure provided in this embodiment is not limited as a unique structure, and may be reasonably designed according to actual requirements when applied, for example, the substrate may be a GaAs, gaN, inP, or GaSb material; the active region gain structure can be a single quantum well, a multiple quantum well, a tunnel junction cascade quantum well, a quantum cascade or a quantum dot; the grating layer 26 may be a striped grating of equal doping levels or a graded index grating of different doping levels, and may be an unburied, buried semiconductor or buried metal structure. In addition, in the present embodiment, the profile of the first HR transition 121, the first AR transition 122, the second HR transition 131 and the second AR transition 132 is a tapered transition, and in practical application, it can also be designed as an arc transition.
The above description is only an embodiment of the present invention, but the design concept of the present invention is not limited thereto. All insubstantial changes made by the design concepts of the present invention shall fall within the scope of infringement of the present invention.
Claims (9)
1. A DFB laser chip with two ends provided with gradually-changed ridge waveguides is characterized in that:
the laser device comprises a first laser cavity and a second laser cavity which are arranged above a substrate at intervals;
two end faces of the first laser cavity along the y direction are respectively a first HR coating cleavage face and a first AR coating cleavage face; two end faces of the second laser cavity along the y direction are a second HR coating cleavage face and a second AR coating cleavage face respectively;
the first laser cavity and the second laser cavity are respectively provided with a first ridge and a second ridge which are uniformly strip-shaped and extend along the y direction;
the first ridge gradually forms a first HR gradually-increased-width gradual change section close to the first HR coating cleavage plane, and gradually forms a first AR gradually-decreased-width gradual change section close to the first AR coating cleavage plane;
the second ridge gradually forms a second HR gradually-changed section with gradually-reduced width close to the second HR coating cleavage plane, and gradually forms a second AR gradually-changed section with gradually-reduced width close to the second AR coating cleavage plane.
2. A DFB laser chip with tapered ridge waveguides at both ends as claimed in claim 1 wherein: the length of the first HR gradual change section along the y direction is L 11 The length of the second HR gradual change section along the y direction is L 21 ， L 11 And L 21 The calculation formula of (2) is as follows:
wherein:
is the emission wavelength of the device; />
Is the effective index of refraction in the central region of the first ridge and the second ridge; />
Is the effective refractive index in the region of the first HR transition segment; />
Is the effective index in the second HR transition region.
3. A DFB laser chip with tapered ridge waveguides at both ends as claimed in claim 2 wherein: said L 11 Has a value range of 0 < L 11 ＜0.2L 0 Said L is 21 Has a value range of 0 < L 21 ＜0.2L 0 Wherein L is 0 The lengths of the first ridge and the second ridge in the y-direction.
4. A DFB laser chip with tapered ridge waveguides at both ends as claimed in claim 3 wherein: the width of the end part of the first HR gradual change section is W 11 And W is 0 ＜W 11 ＜3W 0 Wherein W is 0 Is the width of the middle part of the first ridge; the width of the end part of the second HR gradually-changing section is W 21 And W is 21 ＜0.5μm。
5. A DFB laser chip with tapered ridge waveguides at both ends as claimed in claim 1 wherein: the length of the first AR transition in the y-direction is equal to the length of the first HR transition in the y-direction; the length of the second AR transition in the y-direction is equal to the length of the second HR transition in the y-direction.
6. A DFB laser chip with tapered ridge waveguides at both ends as claimed in claim 1 wherein: the width of the end of the first AR transition is W 12 And W is 12 Less than 1 μm; the second AR transition has an end width W 22 And W is 22 ＜1μm。
7. A DFB laser chip with tapered ridge waveguides at both ends as claimed in claim 1 wherein: the distance between the first laser cavity and the second laser cavity is S, and the value range is as follows: s is more than or equal to 5 mu m and less than or equal to L W μ m, wherein L W Is the length of the DFB laser chip in the x-direction.
8. A DFB laser chip with tapered ridge waveguides at both ends as claimed in claim 1 wherein: the epitaxial structures of the first laser cavity and the second laser cavity sequentially comprise a buffer layer, a lower limiting layer, a quantum well layer, an upper limiting layer, a grating layer and a contact layer from bottom to top; the first ridge and the second ridge are etched from the contact layer to the upper limiting layer.
9. A DFB laser chip with tapered ridge waveguides at both ends as claimed in claim 8 wherein: and manufacturing the grating layer by adopting a holographic exposure photoetching technology.
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