CN105591281B - A kind of distributed Bragg reflector semiconductor laser grating preparation process - Google Patents
A kind of distributed Bragg reflector semiconductor laser grating preparation process Download PDFInfo
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- CN105591281B CN105591281B CN201410560897.3A CN201410560897A CN105591281B CN 105591281 B CN105591281 B CN 105591281B CN 201410560897 A CN201410560897 A CN 201410560897A CN 105591281 B CN105591281 B CN 105591281B
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- semiconductor laser
- grating
- bragg reflector
- distributed bragg
- preparation process
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Abstract
High power 1064nm distributed Bragg reflector semiconductor laser (DBR-LD) belongs to semiconductor photoelectronic device field, and conventional semiconductor laser output power is vulnerable to ambient temperature effect.In addition, distributed-feedback Prague semiconductor laser (DFB-LD) needs secondary epitaxy to grow, compared to DBR-LD complex technical process, application of the DFB-LD in terms of replacement 1064nm solid state laser and as communication seed source is affected.The preparation process of a kind of distributed Bragg reflector semiconductor laser grating of the present invention, by making single order Bragg grating by techniques such as holographic lithography, dry etchings in the face conventional semiconductor laser epitaxial wafer P active area side.The problems such as efficiently solving DFB-LD needs secondary epitaxy, and output power is vulnerable to ambient temperature effect is of great significance to the development for promoting distributed Bragg reflector semiconductor laser.
Description
Technical field
The present invention relates to a kind of high-power 1064nm to be distributed bragg reflector semiconductor laser, in particular to this partly to lead
The grating preparation process field of body laser.
Background technique
With the development of high-power semiconductor laser and preparing grating technology, so that a kind of Gao Gong that people find
The semiconductor laser seed source that rate narrow linewidth stablizes output is achieved.However it can achieve the Gao Gong of seed source requirement at present
Rate semiconductor laser DFB-LD compares with DBR-LD, in addition to the narrow linewidth having many advantages, such as jointly, it is small in size outside, DBR-LD
Because the preparation of its grating does not need to carry out secondary epitaxy as DFB-LD grating, there is the simple advantage of manufacture craft.And
The etching of DBR-LD grating uses dry etching, and Flatness is high, and etched features shape is ideal.This structure another
It is small to the sensibility of temperature when benefit is laser works, the influence for laser threshold current and output power is reduced,
Therefore there is the advantage become apparent.So 1064nm distributed Bragg reflector semiconductor laser (DBR-LD) is as logical
The status that the application of believe seed source and substitute 1064nm solid state laser etc. has other lasers irreplaceable.
Summary of the invention
The present invention is a kind of system of high-power 1064nm distributed Bragg reflector semiconductor laser (DBR-LD) grating
Preparation Method.In the invention, we prepare single order Bragg grating using holographic lithography and ICP dry etching, and holographic lithography is adopted
With the helium cadmium laser of 325nm wavelength, 80% AZ-5214 photoresist is diluted, makes long 1mm, 4 μm wide, period 163nm by lithography
Single order Bragg grating.And ICP dry etching technology in the preparation process of DBR-LD grating is optimized, using four
As reaction gas and protective gas, radio-frequency power is respectively 120W and 500W for chlorination carbon and helium, hydrogen.
Detailed description of the invention
Fig. 1: distributed Bragg reflector semiconductor laser (DBR-LD) design structure schematic diagram.Wherein each number represents
Meaning: 1, the face P thickness covering 2, P contact layer 3, ridge waveguide 4, N contact layer 5, GaAs substrate 6, N bread crumb 7, P surface wave conducting shell
8, N surface wave conducting shell 9, InGaAs well layer 10, DBR grating region 11, the face the P part 12 comprising DBR grating, include ridge waveguide
The face P.
Specific embodiment
(1) Bragg grating of 1mm length is prepared using holographic lithography, photoetching is exported using the helium cadmium laser of 325nm
Light carries out photoetching as laser light source, using laser interference, using the AZ-5214 photoresist of dilution 80%, spin coating maximum speed
5000 turns/s, 120 DEG C of post bake temperature, the time 4.5 minutes, time for exposure 4s.
(2) Bragg grating that holographic optical carves is performed etching followed by ICP dry etching technology, wherein ICP is dry
The etchant gas and protective gas that method etching uses are respectively carbon tetrachloride and hydrogen, argon gas, and wherein carbon tetrachloride flow is
2ml/min, argon flow 3ml/min, hydrogen 1ml/min, sample chamber pressure are that the power of 0.4Pa, RF1 and RF2 are respectively
120W and 500W.
(3) length 1mm is etched, 4 μm wide, period 163nm, 1.5 μm of etching depth of single order Bragg grating.
Claims (3)
1. a kind of preparation process of distributed Bragg reflector semiconductor laser grating, which is characterized in that include following part:
1) the single order Bragg grating for being 163nm using holographic lithography manufacturing cycle, which, which is located at dbr semiconductor laser, has
Source region side；Holographic lithography utilizes holographic optical as the light source of laser interference using the helium cadmium gas laser of wavelength 325nm
It carves platform and carries out photoetching；The photoresist of holographic lithography using dilution 80% AZ-5214 glue, spin coating maximum speed is 5000 turns/
Second, 120 DEG C of times of post bake temperature are 4.5 minutes during post bake, time for exposure 4s；
2) the ICP dry etching technology used in grating etching process is optimized, it is gentle to material, the power of RF of etching
Body flow rate is reset, and is made to etch result and is more leveled off to ideal situation；The etchant gas and protection that ICP dry etching uses
Gas is respectively carbon tetrachloride and hydrogen, argon gas, and wherein carbon tetrachloride flow is 2ml/min, argon flow 3ml/min, hydrogen
Gas 1ml/min, sample chamber pressure are that the power of 0.4Pa, RF1 and RF2 are respectively 120W and 500W；
3) length 1mm is finally etched, the single order Bragg grating that 4 μm wide, depth is 1.5 μm.
2. a kind of preparation process of distributed Bragg reflector semiconductor laser grating as described in claim 1, feature
It is, the depth of dry etching Bragg grating is 1.5 μm in the step 2).
3. a kind of preparation process of distributed Bragg reflector semiconductor laser grating as described in claim 1, feature
It is, a kind of distributed Bragg reflector semiconductor laser described in the step 3) is high-power 1064nmDBR-
LD, it is characterised in that output wavelength 1064nm, grating are length 1mm, wide 4 μm of single order Bragg grating, the single order grating
Period be 163nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410560897.3A CN105591281B (en) | 2014-10-21 | 2014-10-21 | A kind of distributed Bragg reflector semiconductor laser grating preparation process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410560897.3A CN105591281B (en) | 2014-10-21 | 2014-10-21 | A kind of distributed Bragg reflector semiconductor laser grating preparation process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105591281A CN105591281A (en) | 2016-05-18 |
| CN105591281B true CN105591281B (en) | 2019-11-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410560897.3A Expired - Fee Related CN105591281B (en) | 2014-10-21 | 2014-10-21 | A kind of distributed Bragg reflector semiconductor laser grating preparation process |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299094B (en) * | 2016-09-19 | 2019-01-22 | 山东浪潮华光光电子股份有限公司 | A kind of flip-chip and its production method of two-dimensional grating structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909192A (en) * | 2006-08-24 | 2007-02-07 | 长春理工大学 | Non-selective etched process for GaAs/AlGaAs crystal material |
| CN102545044A (en) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | System and method for preparing grating in GaSb-based distributed feedback laser |
| CN103545711A (en) * | 2013-10-22 | 2014-01-29 | 中国科学院半导体研究所 | Distributed feedback type laser device and manufacturing method thereof |
-
2014
- 2014-10-21 CN CN201410560897.3A patent/CN105591281B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909192A (en) * | 2006-08-24 | 2007-02-07 | 长春理工大学 | Non-selective etched process for GaAs/AlGaAs crystal material |
| CN102545044A (en) * | 2012-02-17 | 2012-07-04 | 中国科学院半导体研究所 | System and method for preparing grating in GaSb-based distributed feedback laser |
| CN103545711A (en) * | 2013-10-22 | 2014-01-29 | 中国科学院半导体研究所 | Distributed feedback type laser device and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographically-defined recessed gratings;D.Hofstetter et al.;《Electronics Letters》;19941027;第30卷(第22期);摘要，附图1 * |
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