CN107742824B - Vertical cavity surface emitting semiconductor laser and manufacturing method thereof - Google Patents

Vertical cavity surface emitting semiconductor laser and manufacturing method thereof Download PDF

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Publication number
CN107742824B
CN107742824B CN201711250227.1A CN201711250227A CN107742824B CN 107742824 B CN107742824 B CN 107742824B CN 201711250227 A CN201711250227 A CN 201711250227A CN 107742824 B CN107742824 B CN 107742824B
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layer
algaas
type
dbr structure
type dbr
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CN107742824A (en
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张建伟
张继业
张星
宁永强
秦莉
王立军
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a vertical cavity surface emitting semiconductor laser and a manufacturing method thereof.A P-type electrode structure comprises a transparent insulating layer, a transparent conducting layer and a grid electrode. The transparent insulating layer and the grid electrode are provided with preset pattern structures to form a plurality of light outlets arranged in an array. The edge area of the light outlet can eliminate the high-order mode in the edge area of the light outlet through destructive interference, so that the loss of the high-order mode is increased, and the loss of the edge area of the light outlet to the fundamental mode is smaller. The opening of the square frame is a central area of the through hole, the central area is only provided with one transparent conducting layer, the transparent conducting layer of the central area is directly contacted with the lower P-type DBR structure, current is injected through the transparent conducting layer under the grid electrode, the gain of a fundamental mode is increased, and the gain of a set high-order mode is smaller. Therefore, high-power and high-stability single-mode emission can be realized.

Description

Vertical cavity surface emitting semiconductor laser and manufacturing method thereof
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a vertical cavity surface emitting semiconductor laser and a manufacturing method thereof.
Background
The vertical cavity surface emitting laser is a novel laser, and is widely applied to the fields of laser illumination, spectrometers, sensors, biomedical treatment, optical communication and the like due to good laser stability, coherence and beam quality. With the further development of these fields, the demand for semiconductor lasers (VCSELs) is increasing, and for example, high-power and high-efficiency VCSELs are required in the fields of laser lighting and laser radar, and single-mode and high-beam-quality VCSELs are required in the fields of atomic clocks and optical communications. In recent years, the need for high power, high efficiency single mode output VCSELs has increased.
In order to obtain high-power output, the light-emitting aperture of the single-tube vertical-cavity surface-emitting laser is generally hundreds of microns, but the light-emitting port with large aperture is easy to cause non-uniform current density at each point in the hole, especially the current focusing phenomenon is easy to occur near the oxidation hole in the oxidation limiting layer, so that the light-emitting in the light-emitting hole is non-uniform, a larger far-field divergence angle is formed, and the beam quality of the laser is influenced. And to achieve single mode output, there are generally two ways: (1) increasing the mode gain difference to enable the gain of the fundamental mode to be higher than that of the high-order mode, and further realizing single fundamental mode single longitudinal mode lasing through a higher single-mode rejection ratio; (2) and the mode loss difference is increased, the loss of each mode occurs in the propagation process, and if the loss of a high-order mode can be larger than that of a fundamental mode, single fundamental mode lasing is also realized.
In the prior art, the VCSEL cannot realize the compatibility of a single mode, high power and high efficiency, and can be produced and applied on a large scale.
Disclosure of Invention
In order to solve the above problems, the present invention provides a vertical cavity surface emitting semiconductor laser and a method for manufacturing the same, which achieve the purpose of compatibility between a single mode and high power and high efficiency, and can be used in large-scale production.
In order to achieve the above purpose, the invention provides the following technical scheme:
a vertical-cavity surface-emitting semiconductor laser, comprising:
a substrate having opposing first and second surfaces;
an N-type DBR structure arranged on the first surface;
the active layer is positioned on the surface of the N-type DBR structure;
the P-type DBR structure is positioned on the surface of the active layer;
the P-type electrode structure is positioned on the surface of the P-type DBR structure;
the N-type electrode structure is positioned on the second surface;
wherein the P-type electrode structure comprises: the transparent insulating layer is positioned on the surface of the P-type DBR structure and comprises a plurality of frames which are arranged in a lattice mode, and gaps are formed among the frames; a transparent conducting layer covering the square frame and the surface of the P-type DBR structure; and the grid electrodes are positioned on the surface of the transparent conducting layer, a plurality of light outlets which are in one-to-one correspondence with the square frames are formed on electrode wires of the grid electrodes, and one square frame is arranged in one through hole.
Preferably, in the above vertical cavity surface emitting semiconductor laser, the N-type DBR structure includes:
the first AlGaAs layer and the second AlGaAs layer are alternately distributed in a plurality of layers, and the refractive indexes of the first AlGaAs layer and the second AlGaAs layer are different;
wherein, the first AlGaAs layer and the second AlGaAs layer are both doped in an N type.
Preferably, in the above vertical cavity surface emitting semiconductor laser, the P-type DBR structure includes:
an oxidation limiting layer located on the surface of the active layer, wherein the oxidation limiting layer is provided with a central area and an edge area surrounding the central area; the central region is used for passing photons and carriers, and the edge region is used for limiting the photons and the carriers;
a plurality of layers of third AlGaAs layers and fourth AlGaAs layers alternately distributed on the surface of the oxidation limiting layer, wherein the refractive indexes of the third AlGaAs layers and the fourth AlGaAs layers are different;
wherein the third AlGaAs layer and the fourth AlGaAs layer are both doped P-type.
Preferably, in the above vertical cavity surface emitting semiconductor laser, the oxidation confinement layer is a P-type doped AlGaAs layer of high Al composition;
wherein the Al content of the AlGaAs layer of high Al composition is greater than the Al content of the third AlGaAs layer and greater than the Al content of the fourth AlGaAs layer; the edge region of the AlGaAs layer of high Al composition forms aluminum oxide by oxidation.
Preferably, in the above vertical cavity surface emitting semiconductor laser, the optical thickness of the transparent conductive layer is equal to an even number times a quarter wavelength;
the optical thickness of the transparent insulating layer is an odd multiple of a quarter wavelength.
Preferably, in the vertical cavity surface emitting semiconductor laser, the length and width of the opening of the square frame are different, and the aspect ratio of the opening is adjusted to emit laser light of single polarization.
The present invention also provides a manufacturing method for manufacturing any of the above vertical cavity surface emitting semiconductor lasers, the manufacturing method including:
providing a substrate, wherein the substrate is provided with a first surface and a second surface which are opposite;
forming an N-type DBR structure on the first surface;
forming an active layer on the surface of the N-type DBR structure;
forming a P-type DBR structure on the surface of the active layer;
forming a P-type electrode structure on the surface of the P-type DBR structure, and forming an N-type electrode structure on the second surface;
wherein the P-type electrode structure comprises: the transparent insulating layer is positioned on the surface of the P-type DBR structure and comprises a plurality of frames which are arranged in a lattice mode, and gaps are formed among the frames; a transparent conducting layer covering the square frame and the surface of the P-type DBR structure; and the grid electrode is positioned on the surface of the transparent conducting layer, and the electrode wire of the grid electrode surrounds the square frame in the direction vertical to the substrate.
Preferably, in the above manufacturing method, the forming of the N-type DBR structure on the first surface includes:
forming a plurality of first AlGaAs layers and second AlGaAs layers which are alternately distributed on the first surface, wherein the refractive indexes of the first AlGaAs layers and the second AlGaAs layers are different;
wherein, the first AlGaAs layer and the second AlGaAs layer are both doped in an N type.
Preferably, in the above manufacturing method, the forming of the P-type DBR structure on the surface of the active layer includes:
forming a P-type doped AlGaAs layer with high Al component on the surface of the active layer;
forming a plurality of third AlGaAs layers and fourth AlGaAs layers which are alternately distributed on the surfaces of the AlGaAs layers, wherein the refractive indexes of the third AlGaAs layers and the fourth AlGaAs layers are different; the third AlGaAs layer and the fourth AlGaAs layer are both doped in a P type;
etching the AlGaAs layer with the high Al component, the third AlGaAs layer and the fourth AlGaAs layer to form a mesa structure on the surface of the active layer;
and oxidizing the peripheral region of the high Al composition AlGaAs layer to form aluminum oxide, so that the edge region of the high Al composition AlGaAs layer is oxidized to form aluminum oxide, the edge region of the high Al composition AlGaAs layer is used for limiting photons and current carriers, and the central region of the high Al composition AlGaAs layer is used for passing the photons and the current carriers.
Preferably, in the above manufacturing method, the forming of the P-type electrode structure on the surface of the P-type DBR structure includes:
thinning the second surface, and forming an N-type electrode structure on the second surface;
forming a transparent insulating layer on the surface of the P-type DBR structure;
etching the transparent insulating layer to form a plurality of lattices arranged in a square frame, wherein gaps are arranged among the square frames;
forming a transparent conducting layer covering the square frame and the surface of the P-type DBR structure;
and forming a grid electrode on the surface of the transparent conducting layer, wherein a plurality of light outlets which are in one-to-one correspondence with the square frames are formed on electrode wires of the grid electrode, and one square frame is arranged in one through hole.
As can be seen from the above description, in the vertical cavity surface emitting semiconductor laser and the manufacturing method thereof according to the technical solution of the present invention, the P-type electrode structure includes a transparent insulating layer, a transparent conductive layer, and a grid electrode. The transparent insulating layer and the grid electrode are provided with preset pattern structures to form a plurality of light outlets arranged in an array. The edge area of the light outlet can eliminate the high-order mode in the edge area of the light outlet through destructive interference, the loss of the high-order mode is increased, and the damage of the edge area of the light outlet to the basic mode is small. The opening of the square frame is a central area of the through hole, the central area is only provided with one transparent conducting layer, the transparent conducting layer of the central area is directly contacted with the lower P-type DBR structure, current is injected through the transparent conducting layer under the grid electrode, the gain of a basic mode is increased, and the gain of a high-order mode is smaller. Therefore, high-power and high-stability single-mode emission can be realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a vertical-cavity surface semiconductor laser according to an embodiment of the present invention;
fig. 2-fig. 15 are schematic flow charts of a manufacturing method according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a vertical-cavity surface-emitting semiconductor laser according to an embodiment of the present invention, where the vertical-cavity surface-emitting semiconductor laser includes: a substrate 9, the substrate 9 having opposing first and second surfaces; an N-type DBR structure 5 arranged on the first surface; an active layer 8 on the surface of the N-type DBR structure 5; the P-type DBR structure 4 is positioned on the surface of the active layer 8; the P-type electrode structure is positioned on the surface of the P-type DBR structure 4; and the N-type electrode structure is positioned on the second surface.
Wherein the P-type electrode structure comprises: the transparent insulating layer 3 is positioned on the surface of the P-type DBR structure 4, the transparent insulating layer 3 comprises a plurality of frames which are arranged in a lattice mode, and gaps are formed among the frames; a transparent conductive layer 2 covering the frame and the surface of the P-type DBR structure 4; and the grid electrode 1 is positioned on the surface of the transparent conducting layer 2, the electrode wire of the grid electrode 1 is provided with a plurality of light outlets which are in one-to-one correspondence with the square frames, and one square frame is arranged in one through hole. The light outlet is rectangular, and the square frame completely fills the light outlet.
The N-type DBR structure 5 includes: a plurality of first AlGaAs layers 51 and second AlGaAs layers 52 alternately arranged, the refractive indices of the first AlGaAs layers 51 and the second AlGaAs layers 52 being different; wherein the first AlGaAs layer 51 and the second AlGaAs layer 52 are both doped N-type. P-type doping can be achieved by doping the AlGaAs layer with Si element. In the N-type DBR structure 5, the refractive indices thereof can be controlled by setting the contents of Al components in the first AlGaAs layer 51 and the second AlGaAs layer 52.
The P-type DBR structure 4 includes: an oxidation limiting layer 6 on the surface of the active layer 8, the oxidation limiting layer 6 having a central region 7 and an edge region 11 surrounding the central region 7; the central region 7 is used for passing photons and carriers, and the edge region 11 is used for limiting the photons and the carriers; a third AlGaAs layer 41 and a fourth AlGaAs layer 42 alternately arranged in a plurality of layers on the surface of the oxide confinement layer 6, and the refractive indexes of the third AlGaAs layer 41 and the fourth AlGaAs layer 42 are different. Wherein the third AlGaAs layer 51 and the fourth AlGaAs layer 52 are both P-type doped. P-type doping can be achieved by doping the AlGaAs layer with C element. In the P-type DBR structure 4, the refractive indices of the third AlGaAs layer 51 and the fourth AlGaAs layer 52 can be controlled by setting the content of the Al component.
The oxidation limiting layer 6 is a P-type doped AlGaAs layer with high Al component; wherein the Al content of the AlGaAs layer of high Al composition is greater than the Al content of the third AlGaAs layer and greater than the Al content of the fourth AlGaAs layer; the edge region of the AlGaAs layer of high Al composition forms aluminum oxide by oxidation.
The optical thickness of the transparent conducting layer 2 is equal to even times of a quarter wavelength, and covers the square frame, the gap between the square frames and the square frame opening; the optical thickness of the transparent insulating layer 3 is an odd multiple of a quarter wavelength.
The length and the width of the opening of the square frame are different, and the length-width ratio of the opening is adjusted to emit laser light with single polarization.
The P-type DBR structure 4, the transparent conductive layer 2, and the transparent insulating layer 3 are all square in a direction perpendicular to the substrate 9. The center of the light outlet coincides with the center of the square frame.
In the vertical cavity surface emitting semiconductor laser according to the embodiment of the present invention, two BBR (distributed bragg reflectors) structures are used to form a resonant cavity to emit laser, and specifically, the generated laser is emitted after being reflected and oscillated for multiple times in the resonant cavity between the P-type DBR structure 4 and the N-type DBR structure 5.
The area where the transparent conducting layer 2 and the square frame are opposite is the edge area of the light outlet, because the optical thickness of the transparent conducting layer 2 is equal to the even number times of the quarter wavelength, and the optical thickness of the transparent insulating layer 3 is the odd number times of the quarter wavelength, the edge area of the light outlet can eliminate the high-order mode of the edge area of the light outlet through destructive interference, the loss of the high-order mode is increased, and the loss of the edge area of the light outlet to the fundamental mode is smaller. The opening of the square frame is the central area of the through hole, the central area only has a transparent conducting layer, the transparent conducting layer 2 of the central area is directly contacted with the lower P-type DBR structure, the current is injected through the transparent conducting layer 2 below the grid electrode, the gain of a fundamental mode is increased, and the gain of a high-order mode is smaller. Therefore, high-power and high-stability single-mode emission can be realized.
The P-type DBR structure 4 and the P-type electrode structure are mesa structures on the surface of the active layer 8, and the mesa structures are square in the direction perpendicular to the substrate 9. The oxidation limiting layer 6 is arranged to limit the carrier and the photon, so that the photon and the carrier pass through the central region 7 of the oxidation limiting layer, and the diffraction loss of the photon and the lateral loss of the carrier are reduced. And set up specific grid electrode 1, grid electrode 1's electrode line is light-tight, cuts apart into a plurality of light-emitting ports with mesa structure's light-emitting side, adopts grid electrode 1, and transparent conducting layer 2 of injecing through transparent insulating layer 3's square frame structure and being connected with grid electrode 1 corresponds the center of a plurality of light-emitting ports respectively and provides the electric current for current density is even in each light-emitting port, has avoided the inhomogeneous problem of mesa mechanism electric current among the prior art, makes the photoelectric conversion efficiency further improve.
As can be seen from the above description, the vertical cavity surface emitting semiconductor laser according to the embodiment of the invention not only eliminates the high-order mode by destructive interference at the edge region of the light exit, and increases the loss of the high-order mode, but also increases the gain of the fundamental mode by increasing the gain of the fundamental mode at the center region of the light exit, so as to realize single high-order mode emission with high power and high stability.
Based on the foregoing embodiment, another embodiment of the present invention further provides a manufacturing method for manufacturing the vertical cavity surface emitting semiconductor laser according to the foregoing embodiment, where the manufacturing method is shown in fig. 2 to 15, and fig. 2 to 15 are schematic flow diagrams of the manufacturing method according to the embodiment of the present invention, and the manufacturing method includes:
step S11: as shown in fig. 2, a substrate 9 is provided.
The substrate 9 has opposite first and second surfaces.
Step S12: as shown in fig. 3, an N-type DBR structure 5 is formed on the first surface.
In this step, the forming of the N-type DBR structure 5 on the first surface includes: forming a plurality of first AlGaAs layers 51 and second AlGaAs layers 52 alternately distributed on the first surface, the first AlGaAs layers 51 and the second AlGaAs layers 52 having different refractive indexes; wherein the first AlGaAs layer 51 and the second AlGaAs layer 52 are both doped N-type. The number of layers of the first AlGaAs layer 51 and the second AlGaAs layer 52 in the N-type DBR structure 5 can be set as desired.
Step S13: as shown in fig. 4, an active layer 8 is formed on the surface of the N-type DBR structure 5.
Also, the active layer 8 may be formed using an epitaxial process.
Step S14: as shown in fig. 5 to 8, a P-type DBR structure 4 is formed on the surface of the active layer.
In this step, the forming of the P-type DBR structure 4 on the surface of the active layer includes:
first, as shown in fig. 5, a P-type doped AlGaAs layer 61 of high Al composition is formed on the surface of the active layer.
Then, as shown in fig. 6, a plurality of third AlGaAs layers 41 and fourth AlGaAs layers 42 alternately distributed are formed on the surface of the AlGaAs layer 61, and the refractive indices of the third AlGaAs layers 41 and the fourth AlGaAs layers 42 are different from each other; the third AlGaAs layer 41 and the fourth AlGaAs layer 42 are both P-type doped. The order and number of layers of the third AlGaAs layer 41 and the fourth AlGaAs layer 42 are not particularly limited and may be set as required.
As shown in fig. 7, the AlGaAs layer 61 of high Al composition, the third AlGaAs layer 41, and the fourth AlGaAs layer 42 are etched to form a mesa structure on the active layer surface 8. Specifically, the substrate and the surface structure thereof are cleaned, and then the mesa structure is formed by first photoetching, developing and dry etching.
Finally, as shown in fig. 8, the peripheral region of the AlGaAs layer 61 of high Al composition is oxidized to form aluminum oxide, so that the edge region 11 of the AlGaAs layer 61 of high Al composition is oxidized to form aluminum oxide, the edge region 11 thereof is used for confining photons and carriers, and the central region 7 thereof is used for passing photons and carriers, and finally the P-type DBR structure 4 shown in fig. 8 is formed. Since the AlGaAs layer 61 has a high Al composition, moisture easily enters through the outside of the AlGaAs layer 61 in a high-temperature environment to undergo an oxidation reaction with Al, thereby forming the oxidation limiting layer 6 of a predetermined structure. The content of each Al component of AlGaAs species in the P-type DBR structure 4 can be set so that only the AlGaAs layer 61 is oxidized when oxidized.
Step S14: as shown in fig. 9 to 15, a P-type electrode structure is formed on the surface of the P-type DBR structure, and an N-type electrode structure 10 is formed on the second surface.
Wherein the P-type electrode structure comprises: the transparent insulating layer 3 is positioned on the surface of the P-type DBR structure, the transparent insulating layer 3 comprises a plurality of frames which are arranged in a lattice mode, and gaps are formed among the frames; a transparent conductive layer 2 covering the frame and the surface of the P-type DBR structure 4; and the grid electrodes 1 are positioned on the surface of the transparent conducting layer 2, a plurality of light outlets which are in one-to-one correspondence with the square frames are formed on electrode wires of the grid electrodes, and one square frame is arranged in one through hole.
In this step, the forming of the P-type electrode structure 10 on the surface of the P-type DBR structure includes:
first, as shown in fig. 9, after the second surface is thinned, an N-type electrode structure 10 is formed on the second surface.
Then, as shown in fig. 10, a transparent insulating layer 3 is formed on the surface of the P-type DBR structure 4. The transparent insulating layer 3 may be formed by a plating process.
As shown in fig. 11 and 12, fig. 11 is a vertical sectional view, and fig. 12 is a top view, the transparent insulating layer 3 is etched to form a plurality of frames arranged in a lattice, and a gap is formed between the frames. The blocks may be arranged in an array. And setting the number of the frames according to requirements. The square frame is a rectangular square frame with an opening exposing the P-type DBR structure 4 at the open position. Specifically, the transparent insulating layer 3 may be etched by photolithography and development in a dry etching or wet etching manner to form a frame structure.
As shown in fig. 13 and 14, fig. 13 is a vertical sectional view, and fig. 14 is a plan view, the transparent conductive layer 2 covering the frame and the surface of the P-type DBR structure 4 is formed. The transparent conductive layer 2 may also be formed by a plating process, covering the frame and the P-type DBR structure 4 not covered by the frame structure.
Finally, as shown in fig. 1 and fig. 15, fig. 1 is a vertical sectional view, fig. 15 is a top view, a grid electrode 1 is formed on the surface of the transparent conductive layer 2, a plurality of light outlets corresponding to the frames one by one are formed on electrode wires of the grid electrode, and one frame is arranged in one through hole. The electrode wires of the grid electrode 1 cover the area outside the frame, and the electrode wires are light-tight and are equivalent to the traditional whole transparent electrode material, so that the impedance is lower.
In the manufacturing method, the transparent conductive layer 2 may be an ITO layer, and the transparent insulating layer 3 may be a silicon dioxide layer.
The manufacturing method of the embodiment of the invention is used for manufacturing the vertical cavity surface emitting semiconductor laser of the above embodiment, so that a plurality of light outlets arranged in an array are formed on the light outlet side, the center of each light outlet is only provided with the transparent conducting layer 2, the edge area (namely the area opposite to the square frame) of each light outlet is formed by laminating the transparent insulating layer 3 and the transparent conducting layer 2, and the high-order mode can be eliminated by setting the optical thicknesses of the two layers. The manufacturing method is simple in manufacturing process, good in repeatability and easy to popularize, and can be realized only by coating, photoetching and etching without additionally adding equipment.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. A vertical cavity surface emitting semiconductor laser, comprising:
a substrate having opposing first and second surfaces;
an N-type DBR structure arranged on the first surface;
the active layer is positioned on the surface of the N-type DBR structure;
the P-type DBR structure is positioned on the surface of the active layer;
the P-type electrode structure is positioned on the surface of the P-type DBR structure;
the N-type electrode structure is positioned on the second surface;
wherein the P-type electrode structure comprises: the transparent insulating layer is positioned on the surface of the P-type DBR structure and comprises a plurality of frames which are arranged in a lattice mode, and gaps are formed among the frames; a transparent conducting layer covering the square frame and the surface of the P-type DBR structure; the grid electrode is positioned on the surface of the transparent conducting layer, a plurality of light outlets which are in one-to-one correspondence with the square frames are formed on electrode wires of the grid electrode, one square frame is arranged in one through hole, the length and the width of an opening of each square frame are different, and the length-width ratio of the opening is adjusted to emit single-polarization laser; the grid electrode is light-tight, the light emitting side is divided into the light emitting ports, and the transparent conducting layer connected with the grid electrode is limited through the square frame structure of the transparent insulating layer and corresponds to the centers of the light emitting ports to provide current respectively, so that the current density of each light emitting port is uniform.
2. A vertical cavity surface emitting semiconductor laser as claimed in claim 1 wherein said N-type DBR structure comprises:
the first AlGaAs layer and the second AlGaAs layer are alternately distributed in a plurality of layers, and the refractive indexes of the first AlGaAs layer and the second AlGaAs layer are different;
wherein, the first AlGaAs layer and the second AlGaAs layer are both doped in an N type.
3. A vertical cavity surface emitting semiconductor laser as claimed in claim 1 wherein said P-type DBR structure comprises:
an oxidation limiting layer located on the surface of the active layer, wherein the oxidation limiting layer is provided with a central area and an edge area surrounding the central area; the central region is used for passing photons and carriers, and the edge region is used for limiting the photons and the carriers;
a plurality of layers of third AlGaAs layers and fourth AlGaAs layers alternately distributed on the surface of the oxidation limiting layer, wherein the refractive indexes of the third AlGaAs layers and the fourth AlGaAs layers are different;
wherein the third AlGaAs layer and the fourth AlGaAs layer are both doped P-type.
4. A vertical cavity surface emitting semiconductor laser according to claim 3, wherein said oxidized confinement layer is a P-type doped AlGaAs layer of high Al composition;
wherein the Al content of the AlGaAs layer of high Al composition is greater than the Al content of the third AlGaAs layer and greater than the Al content of the fourth AlGaAs layer; the edge region of the AlGaAs layer of high Al composition forms aluminum oxide by oxidation.
5. A vertical cavity surface emitting semiconductor laser according to claim 1, wherein said transparent conductive layer has an optical thickness equal to an even multiple of a quarter wavelength;
the optical thickness of the transparent insulating layer is an odd multiple of a quarter wavelength.
6. A method of fabricating a vertical cavity surface emitting semiconductor laser as claimed in any of claims 1-5, wherein said method of fabricating comprises:
providing a substrate, wherein the substrate is provided with a first surface and a second surface which are opposite;
forming an N-type DBR structure on the first surface;
forming an active layer on the surface of the N-type DBR structure;
forming a P-type DBR structure on the surface of the active layer;
forming a P-type electrode structure on the surface of the P-type DBR structure, and forming an N-type electrode structure on the second surface;
wherein the P-type electrode structure comprises: the transparent insulating layer is positioned on the surface of the P-type DBR structure and comprises a plurality of frames which are arranged in a lattice mode, and gaps are formed among the frames; a transparent conducting layer covering the square frame and the surface of the P-type DBR structure; the grid electrode is positioned on the surface of the transparent conducting layer, electrode wires of the grid electrode surround the square frame in the direction perpendicular to the substrate, the length and the width of an opening of the square frame are different, and the length-width ratio of the opening is adjusted to emit single-polarization laser; the grid electrode is light-tight, the light emitting side is divided into the light emitting ports, and the transparent conducting layer connected with the grid electrode is limited through the square frame structure of the transparent insulating layer and corresponds to the centers of the light emitting ports to provide current respectively, so that the current density of each light emitting port is uniform.
7. The method of manufacturing according to claim 6, wherein the forming of the N-type DBR structure on the first surface comprises:
forming a plurality of first AlGaAs layers and second AlGaAs layers which are alternately distributed on the first surface, wherein the refractive indexes of the first AlGaAs layers and the second AlGaAs layers are different;
wherein, the first AlGaAs layer and the second AlGaAs layer are both doped in an N type.
8. The method of manufacturing according to claim 6, wherein the forming of the P-type DBR structure on the surface of the active layer comprises:
forming a P-type doped AlGaAs layer with high Al component on the surface of the active layer;
forming a plurality of third AlGaAs layers and fourth AlGaAs layers which are alternately distributed on the surfaces of the AlGaAs layers, wherein the refractive indexes of the third AlGaAs layers and the fourth AlGaAs layers are different; the third AlGaAs layer and the fourth AlGaAs layer are both doped in a P type;
etching the AlGaAs layer with the high Al component, the third AlGaAs layer and the fourth AlGaAs layer to form a mesa structure on the surface of the active layer;
and oxidizing the peripheral region of the high Al composition AlGaAs layer to form aluminum oxide, so that the edge region of the high Al composition AlGaAs layer is oxidized to form aluminum oxide, the edge region of the high Al composition AlGaAs layer is used for limiting photons and current carriers, and the central region of the high Al composition AlGaAs layer is used for passing the photons and the current carriers.
9. The manufacturing method according to claim 6, wherein the forming of the P-type electrode structure on the surface of the P-type DBR structure comprises:
thinning the second surface, and forming an N-type electrode structure on the second surface;
forming a transparent insulating layer on the surface of the P-type DBR structure;
etching the transparent insulating layer to form a plurality of lattices arranged in a square frame, wherein gaps are arranged among the square frames;
forming a transparent conducting layer covering the square frame and the surface of the P-type DBR structure;
and forming a grid electrode on the surface of the transparent conducting layer, wherein a plurality of light outlets which are in one-to-one correspondence with the square frames are formed on electrode wires of the grid electrode, and one square frame is arranged in one through hole.
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