CN109193341B - Vertical cavity surface emitting laser and manufacturing method thereof - Google Patents
Vertical cavity surface emitting laser and manufacturing method thereof Download PDFInfo
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- CN109193341B CN109193341B CN201811139053.6A CN201811139053A CN109193341B CN 109193341 B CN109193341 B CN 109193341B CN 201811139053 A CN201811139053 A CN 201811139053A CN 109193341 B CN109193341 B CN 109193341B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Abstract
The invention discloses a vertical cavity surface emitting laser and a manufacturing method thereof, wherein the vertical cavity surface emitting laser comprises a first periodic laminated mirror structure, a second periodic laminated mirror structure, a light emitting layer and a depletion layer, wherein the light emitting layer and the depletion layer are positioned between the first periodic laminated mirror structure and the second periodic laminated mirror structure, carriers can be transmitted between the light emitting layer and the depletion layer, and a platform for emitting light is formed by the second periodic laminated mirror structure; an insulating layer formed on the depletion layer and an electrode layer formed on the insulating layer are also included, which are located outside the mesa. By applying voltage to the electrode layer, due to the field effect formed among the electrode layer, the insulating layer and the semiconductor material, carriers of the depletion layer can be pumped to the lower part of the insulating layer and form an electric field in the depletion layer, and the carriers scattered by the light emitting layer are pumped to the depletion layer by the electric field and are consumed, so that the trailing phenomenon of the output light waveform is weakened, and the pulse response capability of the vertical cavity surface emitting laser is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectricity, in particular to a vertical cavity surface emitting laser and a manufacturing method thereof.
Background
In the application, the Vertical Cavity Surface Emitting semiconductor laser must work in an ultrashort pulse state at nanosecond level, the pulse waveform must respond quickly, smoothly and without delay, otherwise, the detection and imaging precision is seriously influenced, and therefore how to improve the response speed of the Vertical Cavity Surface Emitting semiconductor laser is a research hotspot in recent years.
The conventional VCSE L structure comprises a lower electrode, a substrate, a lower Distributed Bragg Reflector (DBR), a light emitting region, an upper Distributed Bragg Reflector (DBR) and an upper electrode, wherein the DBR is a periodic structural layer with up to nearly one hundred layers, and light emitted by the light emitting region forms laser output after reciprocating and oscillating for multiple times through the DBR structure.
Disclosure of Invention
The invention aims to provide a vertical cavity surface emitting laser, which can weaken the trailing phenomenon of an output light waveform and improve the pulse response capability of the vertical cavity surface emitting laser. The invention also provides a method for manufacturing the vertical cavity surface emitting laser,
in order to achieve the purpose, the invention provides the following technical scheme:
a vertical cavity surface emitting laser comprising a first periodic laminated mirror structure, a second periodic laminated mirror structure, a light emitting layer and a depletion layer, the light emitting layer and the depletion layer being located between the first periodic laminated mirror structure and the second periodic laminated mirror structure, carriers being transmittable between the light emitting layer and the depletion layer, a mesa for light emission being formed by the second periodic laminated mirror structure;
further comprising an insulating layer formed on the depletion layer and an electrode layer formed on the insulating layer, outside the mesa.
Preferably, the light emitting layer is located between the second periodic stacked mirror structure and the depletion layer.
Preferably, the light emitting layer is located between the first periodic stacked mirror structure and the depletion layer.
Preferably, the insulating layer and the electrode layer surround a mesa formed of the second periodic stacked mirror structure.
Preferably, the depletion layer comprises AlGaAs, AlGaN, AlGaInP, InGaAsP, GaSb or an organic light emitting material.
Preferably, the optical thickness of the depletion layer is an integral multiple of one-half wavelength, and the wavelength is a wavelength of laser light output by the vertical cavity surface emitting laser.
Preferably, the light emitting device further includes a substrate located on a side of the first periodic stacked mirror structure facing away from the light emitting layer, an electrode layer located on a side of the substrate facing away from the first periodic stacked mirror structure, and an electrode layer located on a side of the second periodic stacked mirror structure facing away from the light emitting layer, where the electrode layer is provided with a light exit window.
Preferably, the mesa formed by the second periodic laminated mirror structure is a circular mesa, a square mesa, or a rectangular mesa.
A method for manufacturing a vertical cavity surface emitting laser is used for manufacturing the vertical cavity surface emitting laser, and the method comprises the following steps:
sequentially manufacturing a first periodic laminated mirror structure, a depletion layer, a light emitting layer and a second periodic laminated mirror structure;
etching the second periodic laminated mirror structure and the light emitting layer to form a platform for emitting light;
and manufacturing an insulating layer on the depletion layer outside the table, and manufacturing an electrode layer on the insulating layer.
A method for manufacturing a vertical cavity surface emitting laser is used for manufacturing the vertical cavity surface emitting laser, and the method comprises the following steps:
sequentially manufacturing a first periodic laminated mirror structure, a light emitting layer, a depletion layer and a second periodic laminated mirror structure;
etching the second periodic laminated mirror structure to form a mesa for emitting light;
an insulating layer is formed around the mesa on the depletion layer, and an electrode layer is formed on the insulating layer.
According to the above technical solution, the vertical cavity surface emitting laser provided by the present invention includes a first periodic stacked mirror structure, a second periodic stacked mirror structure, a light emitting layer, and a depletion layer, wherein the light emitting layer and the depletion layer are located between the first periodic stacked mirror structure and the second periodic stacked mirror structure, and carriers can be transmitted between the light emitting layer and the depletion layer, and the second periodic stacked mirror structure forms a platform for emitting light. Light generated by the light emitting layer is oscillated for multiple times in a reciprocating manner by the first periodic laminated mirror structure and the second periodic laminated mirror structure to form laser which is emitted by the second periodic laminated mirror structure. An insulating layer is formed on the depletion layer on the outer side of the light-emitting platform, an electrode layer is formed on the insulating layer, voltage is applied to the electrode layer, due to the field effect formed among the electrode layer, the insulating layer and the semiconductor material, carriers of the depletion layer can be pumped to the lower portion of the insulating layer, an electric field is formed in the depletion layer, the carriers scattered by the light-emitting layer are pumped to the depletion layer by the electric field, and are consumed, so that stray light caused by the scattered carriers is restrained, the trailing phenomenon of output light waveforms is weakened, and the pulse response capability of the vertical cavity surface emitting laser is improved.
The manufacturing method of the vertical cavity surface emitting laser can achieve the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic longitudinal cross-sectional view of a VCSEL provided in accordance with an embodiment of the invention;
FIG. 2 is a top view of the VCSEL of FIG. 1;
FIG. 3 is a schematic longitudinal cross-sectional view of a VCSEL provided in accordance with another embodiment of the invention;
FIG. 4 is a flowchart of a method for fabricating a VCSEL according to an embodiment of the invention;
FIG. 5 is a flowchart of a method for fabricating a VCSEL according to another embodiment of the invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a vertical cavity surface emitting laser, which comprises a first periodic laminated mirror structure, a second periodic laminated mirror structure, a light emitting layer and a depletion layer, wherein the light emitting layer and the depletion layer are positioned between the first periodic laminated mirror structure and the second periodic laminated mirror structure, carriers can be transmitted between the light emitting layer and the depletion layer, and a platform for emitting light is formed by the second periodic laminated mirror structure;
further comprising an insulating layer formed on the depletion layer and an electrode layer formed on the insulating layer, outside the mesa.
The first periodic laminated mirror structure and the second periodic laminated mirror structure are laminated structures which are periodically alternated by two optical medium materials with different refractive indexes, and have higher reflectivity for light in an operating waveband. The depletion layer can transmit carriers between the depletion layer and the light-emitting layer, does not influence the light-emitting layer to carry out photoelectric conversion and emit light, and the light can propagate from the light-emitting layer to the first periodic laminated mirror structure and the second periodic laminated mirror structure. Light generated by the light emitting layer is oscillated for multiple times in a reciprocating manner by the first periodic laminated mirror structure and the second periodic laminated mirror structure to form laser which is emitted by the second periodic laminated mirror structure.
An insulating layer is formed on the depletion layer and an electrode layer is formed on the insulating layer outside the light-emitting platform, a metal-insulator-semiconductor field effect is generated among the electrode layer, the insulating layer and the semiconductor material by applying voltage to the electrode layer, due to the field effect, carriers of the depletion layer are pumped to the lower part of the insulating layer and form an electric field in the depletion layer, and the carriers scattered by the light-emitting layer are pumped to the depletion layer by the electric field and consumed, so that stray light caused by the scattered carriers is restrained, the trailing phenomenon of output light waveform is weakened, and the pulse response capability of the vertical cavity surface emitting laser is improved.
The vertical cavity surface emitting laser according to the present embodiment will be described in detail with reference to the drawings and the detailed description.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic longitudinal cross-sectional view of a vertical cavity surface emitting laser according to an embodiment of the present invention, and fig. 2 is a top view of the vertical cavity surface emitting laser shown in fig. 1, which shows that the vertical cavity surface emitting laser includes a first periodic stacked mirror structure 11, a second periodic stacked mirror structure 12, a light emitting layer 13, and a depletion layer 14. A light emitting layer 13 and a depletion layer 14 are located between the first periodic laminated mirror structure 11 and the second periodic laminated mirror structure 12, specifically, the light emitting layer 13 is located between the second periodic laminated mirror structure 12 and the depletion layer 14, and a stage for light emission is formed by the light emitting layer 13 and the second periodic laminated mirror structure 12.
The first periodic laminated mirror structure 11 or the second periodic laminated mirror structure 12 is made of a semiconductor optical medium material, and the first periodic laminated mirror structure or the second periodic laminated mirror structure may be a distributed bragg reflector. Illustratively, the first periodic stacked mirror structure 11 may include AlGaAs or AlGaN, and a strain type multi-element material of AlGaInP, InGaAsP or GaSb may be used, or an organic light emitting material may be used. The second periodic laminated mirror structure 12 may include AlGaAs or AlGaN, and a strain type multi-element material of AlGaInP, InGaAsP, or GaSb may be used, or an organic light emitting material may be used. Without limitation, other semiconductor optical materials may be used for the first periodic stacked mirror structure or the second periodic stacked mirror structure in other embodiments of the invention, and are within the scope of the invention.
Alternatively, the light emitting layer 13 may include AlGaAs or AlGaN, and a strain type multi-element material of AlGaInP, InGaAsP or GaSb may be used, or an organic light emitting material may be used. Alternatively, the light emitting layer 13 may be a light emitting material having a structure of a quantum well, a quantum dot, a quantum wire, or the like. But not limited thereto, other optical materials may be used for the light-emitting layer in other embodiments of the present invention, and the present invention is also within the scope of the present invention.
Preferably, the optical thickness of the depletion layer 14 is an integral multiple of one-half wavelength, which is the wavelength of laser light output by the laser, so as to ensure that the optical oscillation inside the laser is not affected. Alternatively, the depletion layer 14 may comprise AlGaAs or AlGaN, and a strained multicomponent material of AlGaInP, InGaAsP or GaSb may be used, or an organic light emitting material may be used. Without limitation, other optical materials may be used for the depletion layer in other embodiments of the invention and are within the scope of the invention.
The vertical cavity surface emitting laser further includes an insulating layer 15 formed on the depletion layer 14 and an electrode layer 16 formed on the insulating layer 15, which are located outside the mesa formed by the second periodic laminated mirror structure.
Alternatively, the insulating layer 15 may be made of silicon dioxide or an organic material, but is not limited thereto, and other insulating dielectric materials may also be used, and are within the scope of the present invention.
In practical implementation, it is preferable that the insulating layer 15 and the electrode layer 16 surround the mesa formed by the second periodic stacked mirror structure 12 and the light emitting layer 13, as shown in fig. 2, so that the insulating layer and the depletion layer electrode are arranged to be identical to the electrode layer region arranged on the second periodic stacked mirror structure, which can achieve a preferable effect.
More specifically, an interval is provided between the inner side of the electrode layer 16 and the outer side of the mesa formed by the second periodic stacked mirror structure 12, and the electrode layer corresponding to the depletion layer is ensured to be insulated and isolated from the second periodic stacked mirror structure and the electrode thereof by the reserved interval.
Further, in the present embodiment, the stage formed by the second periodic laminated mirror structure 12 may be a circular stage, a square stage, or a rectangular stage. But is not limited thereto and may have other shapes.
More specifically, the present embodiment further includes a substrate 10 located on a side of the first periodic stacked mirror structure 11 facing away from the light emitting layer 13, an electrode layer 17 located on a side of the substrate 10 facing away from the first periodic stacked mirror structure 11, and an electrode layer 18 located on a side of the second periodic stacked mirror structure 12 facing away from the light emitting layer 13, where the electrode layer 18 is provided with a light exit window 19.
Referring to fig. 3, fig. 3 is a schematic longitudinal cross-sectional view of a vertical cavity surface emitting laser according to still another embodiment of the present invention, wherein the vertical cavity surface emitting laser includes a first periodic stacked mirror structure 21, a second periodic stacked mirror structure 22, a light emitting layer 23, and a depletion layer 24. The light emitting layer 23 and the depletion layer 24 are located between the first periodic laminated mirror structure 21 and the second periodic laminated mirror structure 22, and specifically, the light emitting layer 23 is located between the first periodic laminated mirror structure 21 and the depletion layer 24, and a mesa for emitting light is formed by the second periodic laminated mirror structure 22.
The light-emitting layer 23 and the depletion layer 24 can transmit carriers, and the optical thickness of the depletion layer 24 is preferably integral multiple of one-half wavelength, which is the wavelength of laser light output by the laser to ensure that the optical oscillation inside the laser is not affected.
The vertical cavity surface emitting laser further includes an insulating layer 25 formed on the depletion layer 24 and an electrode layer 26 formed on the insulating layer 25, which are located outside the mesa formed by the second periodic stacked mirror structure. Alternatively, the insulating layer 25 may be made of silicon dioxide or an organic material, but is not limited thereto, and other insulating dielectric materials may be used, and the invention is also within the scope of the present invention.
In this embodiment, it is preferable that the insulating layer 25 and the electrode layer 26 surround the mesa formed by the second periodic stacked mirror structure 22, and this arrangement makes the insulating layer and the depletion layer electrode coincide with the electrode layer region provided on the second periodic stacked mirror structure, which can achieve a preferable effect.
More specifically, referring to fig. 3, a gap is formed between the inner side of the electrode layer 26 and the outer side of the mesa formed by the second periodic stacked mirror structure 22, and the electrode layer corresponding to the depletion layer is kept insulated and isolated from the second periodic stacked mirror structure and the electrode thereof by the reserved gap.
In this embodiment, the materials that can be used for the first periodic stacked mirror structure 21, the second periodic stacked mirror structure 22, the light emitting layer 23, and the depletion layer 24 can all refer to the corresponding descriptions in the previous embodiment, and the description of this embodiment is omitted.
Further, in the present embodiment, the mesa formed by the second periodic laminated mirror structure 22 is a circular mesa, a square mesa, or a rectangular mesa. But is not limited thereto and may have other shapes.
More specifically, the present embodiment further includes a substrate 20 located on a side of the first periodic stacked mirror structure 21 facing away from the light emitting layer 23, an electrode layer 27 located on a side of the substrate 20 facing away from the first periodic stacked mirror structure 21, and an electrode layer 28 located on a side of the second periodic stacked mirror structure 22 facing away from the light emitting layer 23, where the electrode layer 28 is provided with a light exit window.
Accordingly, referring to fig. 4, an embodiment of the present invention further provides a method for manufacturing a vertical cavity surface emitting laser, which is used for manufacturing the vertical cavity surface emitting laser, and includes the following steps:
s30: a first periodic laminated mirror structure, a depletion layer, a light emitting layer, and a second periodic laminated mirror structure are sequentially fabricated.
S31: and etching the second periodic laminated mirror structure and the light-emitting layer to form a platform for emitting light.
In this step, the etching depth is set to the second periodic laminated mirror structure and the light emitting layer to expose the depletion layer.
S32: and manufacturing an insulating layer on the depletion layer outside the table, and manufacturing an electrode layer on the insulating layer.
In specific implementation, an insulating layer may be formed on the depletion layer outside the mesa, and then the remaining insulating layer may be etched away by using a mask etching technique, leaving only the edge layer around the mesa, and then forming an electrode layer on the insulating layer.
In the vertical cavity surface emitting laser manufactured by the method of the embodiment, the depletion layer is arranged between the light emitting layer and the first periodic laminated mirror structure, the insulating layer is formed on the depletion layer and the electrode layer is formed on the insulating layer at the outer side of the light emitting platform, and the metal-insulator-semiconductor field effect is generated among the electrode layer, the insulating layer and the semiconductor material by applying voltage to the electrode layer.
Referring to fig. 5, another embodiment of the present invention provides a method for fabricating a vertical cavity surface emitting laser, which is used for fabricating the vertical cavity surface emitting laser, and includes the following steps:
s40: a first periodic laminated mirror structure, a light emitting layer, a depletion layer, and a second periodic laminated mirror structure are sequentially fabricated.
S41: and etching the second periodic laminated mirror structure to form a platform for light extraction.
In this step, the etch depth is second than the periodic stacked mirror structure, exposing the depletion layer.
S42: an insulating layer is formed around the mesa on the depletion layer, and an electrode layer is formed on the insulating layer.
In specific implementation, an insulating layer may be formed on the depletion layer outside the mesa, and then the remaining insulating layer may be etched away by using a mask etching technique, leaving only the edge layer around the mesa, and then forming an electrode layer on the insulating layer.
In the vertical cavity surface emitting laser manufactured by the method of the embodiment, the depletion layer is arranged between the light emitting layer and the second periodic laminated mirror structure, the insulating layer is formed on the depletion layer and the electrode layer is formed on the insulating layer at the outer side of the light emitting platform, and the metal-insulator-semiconductor field effect is generated among the electrode layer, the insulating layer and the semiconductor material by applying voltage to the electrode layer.
The above description describes a vertical cavity surface emitting laser and a method for manufacturing the same in detail. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A vertical cavity surface emitting laser comprising a first periodic laminated mirror structure, a second periodic laminated mirror structure, a light emitting layer and a depletion layer, the light emitting layer and the depletion layer being located between the first periodic laminated mirror structure and the second periodic laminated mirror structure, carriers being transmittable between the light emitting layer and the depletion layer, a mesa for light emission being formed by the second periodic laminated mirror structure;
and an insulating layer formed on the depletion layer and an electrode layer formed on the insulating layer, wherein a metal-insulator-semiconductor field effect is generated among the electrode layer, the insulating layer and the semiconductor material by applying a voltage to the electrode layer, and due to the field effect, carriers of the depletion layer are pumped under the insulating layer and form an electric field in the depletion layer, and carriers scattered by the light emitting layer are pumped to the depletion layer by the electric field and consumed.
2. A vertical cavity surface emitting laser according to claim 1, wherein said light emitting layer is located between said second periodic stacked mirror structure and said depletion layer.
3. A vertical cavity surface emitting laser according to claim 1, wherein said light emitting layer is located between said first periodic stacked mirror structure and said depletion layer.
4. A vertical cavity surface emitting laser according to any one of claims 1 to 3, wherein said insulating layer and said electrode layer surround a mesa formed by said second periodic stacked mirror structure.
5. A vertical cavity surface emitting laser according to claim 1, wherein said depletion layer comprises AlGaAs, AlGaN, AlGaInP, InGaAsP, GaSb or an organic light emitting material.
6. A vcsel according to claim 1, wherein said depletion layer has an optical thickness that is an integer multiple of one-half of a wavelength of lasing light output from the vcsel.
7. A vertical cavity surface emitting laser according to claim 1, further comprising a substrate on a side of said first periodic stacked mirror structure facing away from said light emitting layer, and an electrode layer on a side of said substrate facing away from said first periodic stacked mirror structure, and an electrode layer on a side of said second periodic stacked mirror structure facing away from said light emitting layer, said electrode layer being provided with a light exit window.
8. A vertical cavity surface emitting laser according to claim 1, wherein said mesa formed by said second periodic stacked mirror structure is a circular mesa, a square mesa or a rectangular mesa.
9. A method for fabricating a vertical cavity surface emitting laser, the method being used for fabricating the vertical cavity surface emitting laser according to any one of claims 2 or 4 to 8, the method comprising:
sequentially manufacturing a first periodic laminated mirror structure, a depletion layer, a light emitting layer and a second periodic laminated mirror structure;
etching the second periodic laminated mirror structure and the light emitting layer to form a platform for emitting light;
and manufacturing an insulating layer on the depletion layer outside the table, and manufacturing an electrode layer on the insulating layer.
10. A method for fabricating a vertical cavity surface emitting laser, the method being used for fabricating the vertical cavity surface emitting laser according to any one of claims 3 or 4 to 8, the method comprising:
sequentially manufacturing a first periodic laminated mirror structure, a light emitting layer, a depletion layer and a second periodic laminated mirror structure;
etching the second periodic laminated mirror structure to form a mesa for emitting light;
an insulating layer is formed around the mesa on the depletion layer, and an electrode layer is formed on the insulating layer.
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