WO2021142962A1

WO2021142962A1 - High-contrast grating vertical-cavity surface-emitting laser and manufacturing method therefor

Info

Publication number: WO2021142962A1
Application number: PCT/CN2020/085164
Authority: WO
Inventors: 沈志强
Original assignee: 浙江博升光电科技有限公司
Priority date: 2020-01-16
Filing date: 2020-04-16
Publication date: 2021-07-22
Also published as: CN111211488A

Abstract

Disclosed are a high-contrast grating vertical-cavity surface-emitting laser and a manufacturing method therefor. The high-contrast grating vertical-cavity surface-emitting laser comprises: a first reflector layer, an active layer, and a second reflector layer that are stacked. The second reflector layer comprises an oxide isolation layer and a grating layer; the oxide isolation layer is located between the grating layer and the active layer; at least a part of the grating layer is provided with a grating; grating grooves of the grating extend to the oxide isolation layer; the oxide isolation layer is provided with a first oxidation region; and the first oxidation region supports the grating, and has a refractive index smaller than the refractive index of the grating. In the solution, the first oxidation region supports the grating, while in the prior art, the grating floats on the grooves, and therefore, the grating is not easily damaged; in addition, due to the supporting effect of the first oxidation region, the grating may use strip, mesh, columnar and other structures.

Description

High-contrast grating vertical cavity surface emitting laser and manufacturing method

Technical field

The present invention generally relates to the technical field of lasers, in particular to a high-contrast grating vertical cavity surface emitting laser and a manufacturing method.

Background technique

In a vertical cavity surface emitting laser (Vertical-Cavity Surface-Emitting Laser; VCSEL) device, a high-contrast grating (High Contrast Grating; HCG) can be used instead of a Bragg reflector (Distributed Bragg Reflector; DBR). The HCG includes a spacer layer, a groove is formed on the spacer layer, and a grating is suspended above the groove. Since the grating is suspended above the groove, it is susceptible to mechanical damage. In addition, when a 2-dimensional (Dimensions; D) grating is used, it can only adopt a gridded shape.

Summary of the invention

The present application intends to provide a high-contrast grating vertical cavity surface emitting laser and a manufacturing method to solve the problem that the 2D structure adopting the air-suspended grating in the prior art can only adopt a mesh structure, cannot form a columnar structure, and is easy to be damaged.

In the first aspect, the present invention provides a high-contrast grating vertical cavity surface emitting laser, including:

A first reflector layer, an active layer, and a second reflector layer that are stacked;

The second reflector layer includes an oxide isolation layer and a grating layer, the oxide isolation layer is located between the grating layer and the active layer, at least a part of the grating layer is provided with a grating, and the grating The gate trenches of the second oxide layer extend to the oxide isolation layer, the oxide isolation layer is provided with a first oxide region, the first oxide region supports the grating, and the refractive index of the first oxide region is smaller than that of the grating Refractive index.

As an achievable manner, the first reflector layer, the active layer, and the second reflector layer form a three-stage stepped structure;

A current spreading layer is formed on the active layer, a first electrode is formed on the current spreading layer, and the first electrode is located at a step position.

As an achievable manner, the first reflector layer, the active layer, and the second reflector layer form a two-stage stepped structure, wherein the first reflector layer forms a first step, at least The active layer and the second reflector layer form a second step;

A first electrode is provided on the grating layer in an area outside the grating.

As an achievable way, an oxide layer is formed on at least one side of the active layer, the oxide layer includes a second oxidized region and an unoxidized region, the second oxidized region surrounds the unoxidized region, and the unoxidized region The oxidized area is used to define the laser exit window.

As an achievable manner, the first reflector layer, the active layer, and the second reflector layer form a platform structure;

The active layer includes a proton or ion implantation region and a first non-implantation region, the proton or ion implantation region surrounds the first non-implantation region, and the first non-implantation region is used to define a laser exit window.

As an achievable manner, the laser exit window is less than or equal to the first oxide region, the active layer further includes a second unimplanted region, and the second unimplanted region is located between the oxide isolation layer and the Proton or ion implantation between regions.

As an achievable manner, the thickness of the oxide isolation layer is less than λ/6, where λ is the wavelength of the laser light emitted by the high-contrast grating vertical cavity surface emitting laser.

In a second aspect, the present invention provides a method for manufacturing the above-mentioned high-contrast grating vertical cavity surface emitting laser, including:

Sequentially forming a first reflector layer, an active layer, and a second reflector layer that are stacked;

The method for forming the second reflector layer includes:

Sequentially forming an oxide isolation layer and a grating layer, the oxide isolation layer being located between the grating layer and the active layer;

Etching at least a part of the grating layer to form a grating groove, and the grating groove extends to the oxide isolation layer;

A wet oxidation process is performed on the oxide isolation layer through the gate groove to form a first oxidation region facing the grating, and the refractive index of the first oxidation region is smaller than the refractive index of the grating.

As an achievable manner, an electrode contact layer is formed on the side of the first reflector layer facing the active layer;

Forming an oxide layer on at least one side of the active layer;

Forming a current spreading layer on the side of the oxide isolation layer away from the grating layer;

Removing the grating layer other than the region opposed by the grating and the oxide isolation layer other than the region opposed by the grating;

Forming an oxidation trench, the oxidation trench at least extending from the second reflector layer to the electrode contact layer;

Using the wet oxidation process in the oxidation trench to make the oxide layer form the second oxidation region surrounding the non-oxidized region inwardly from the oxidation trench;

An electrode is formed on the electrode contact layer and the current spreading layer.

Forming an oxide layer on at least one side of the active layer;

An electrode is formed on the electrode contact layer and the grating layer.

As an achievable way, a proton or ion implantation region and a first non-implanted region are formed in the active layer through a proton or ion implantation process, and the proton or ion implantation region surrounds the first non-implanted region, and The first uninjected area is used to define the laser exit window.

In the above solution, the first oxidized region supports the grating instead of floating on the groove as the grating in the prior art, so the grating is not easily damaged, which greatly improves the reliability of the high-contrast grating vertical cavity surface emitting laser In addition, due to the supporting effect of the first oxidation region, the grating can adopt a structure such as a stripe, a mesh, or a column. The refractive index of the first oxidized region is smaller than that of the grating, forming a high-contrast grating.

Description of the drawings

By reading the detailed description of the non-limiting embodiments with reference to the following drawings, other features, purposes and advantages of the present application will become more apparent:

FIG. 1 is a schematic diagram of a vertical high-contrast grating vertical cavity surface emitting laser provided by an embodiment of the present invention;

2-7 are schematic diagrams of the manufacturing process of one of the vertical high-contrast grating vertical cavity surface emitting lasers provided by the embodiments of the invention.

Fig. 8 is a schematic diagram of one structure of a vertical high contrast grating vertical cavity surface emitting laser provided by an embodiment of the invention;

9-13 are schematic diagrams of the manufacturing process of another vertical high-contrast grating vertical cavity surface emitting laser according to an embodiment of the invention;

Fig. 14 is another structural schematic diagram of a vertical high-contrast grating vertical cavity surface emitting laser provided by an embodiment of the invention;

15-20 are schematic diagrams of the manufacturing process of yet another vertical high-contrast grating vertical cavity surface emitting laser provided by an embodiment of the invention.

Detailed ways

The application will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described here are only used to explain the related invention, but not to limit the invention. In addition, it should be noted that, for ease of description, only the parts related to the invention are shown in the drawings.

It should be noted that the embodiments in the application and the features in the embodiments can be combined with each other if there is no conflict. Hereinafter, the application will be described in detail with reference to the drawings and in conjunction with the embodiments.

As shown in FIG. 1, an embodiment of the present invention provides a vertical high-contrast grating vertical cavity surface emitting laser, including:

The first reflector layer 1, the active layer 8 and the second reflector layer 3 are stacked; the second reflector layer 3 includes an oxide isolation layer 31 and a grating layer 32. The oxide isolation layer 31 is located on the grating layer 32 and there are Between the source layers 8, at least a part of the grating layer 32 is provided with a grating 4, and the grating groove 5 of the grating 4 extends to the oxide isolation layer 31. The oxide isolation layer 31 is provided with a first oxidized region 6, and the first oxidized region 6 supports For the grating, the refractive index of the first oxidized region 6 is smaller than the refractive index of the grating.

The material of the oxide isolation layer 31 is, for example, but not limited to, AlGaAs. Specifically, the ratio may be Al _x Ga _1-x As (0.8<x≦1).

The grating is, for example, but not limited to, a sub-wavelength grating.

In the above solution, the first oxidized region 6 supports the grating instead of suspending the grating on the groove as in the prior art, so the grating is not easily damaged, which greatly improves the reliability of the high-contrast grating vertical cavity surface emitting laser. In addition, due to the supporting effect of the first oxidation region 6, the grating can adopt a structure such as a stripe, a mesh, or a column. In addition, more complex optical structures can be integrated into the grating, such as but not limited to lenses or phase plates used to generate orbital angular momentum beams. The refractive index of the first oxidized region 6 is smaller than the refractive index of the grating, forming a high-contrast grating.

In addition to the first reflector layer 1, the active layer 8 and the second reflector layer 3, the vertical high contrast grating vertical cavity surface emitting laser can also include an oxide layer 2, a current spreading layer 9 and other functions according to actual needs. Sexual layer, the following will describe one by one.

As shown in Figures 2-7, as one of the possible implementations, the first reflector layer 1, the active layer 8 and the second reflector layer 3 form a three-stage stepped structure; the first reflector layer 1 forms a first The active layer 8 forms the second step, and the second reflector layer 3 forms the third step. It can be understood that the dimensions of the first reflector layer 1, the active layer 8 and the second reflector layer 3 are reduced in order. Small. Of course, in other embodiments, the sizes of the first reflector layer 1, the active layer 8 and the second reflector layer 3 may also be increased sequentially.

A current spreading layer 9 is formed on the active layer 8, a first electrode 13 is formed on the current spreading layer 9, and the first electrode 13 is located at a step position. The first electrode 13 may be formed on the current spreading layer 9 by a deposition method, for example, chemical vapor deposition, electroplating, sputtering, evaporation, or the like.

The material of the current spreading layer 9 is, for example, but not limited to, GaAs.

In order to limit the current and improve the light extraction efficiency of the high-contrast grating vertical cavity surface emitting laser, an oxide layer 2 is formed on at least one side of the active layer 8. The oxide layer 2 includes a second oxidized region 12 and an unoxidized region 11 The second oxidized region 12 surrounds the non-oxidized region 11, and the non-oxidized region 11 is used to define the laser exit window. When the high-contrast grating vertical cavity surface emitting laser is provided with multiple light emitting regions, the oxide layer 2 is provided to make the current flowing through each light emitting region uniform, so the brightness uniformity of the light emitting region is high, and the vertical cavity surface emitting laser is improved Quality. The second oxidation region 12 can be formed in the same oxidation process as the first oxidation region 6, of course, it can also be formed in two oxidation processes separately.

The high-contrast grating vertical cavity surface emitting laser of this embodiment can be formed by the following steps:

A substrate is provided; the substrate can be a GaAs substrate.

A first reflector layer 1 is formed on the substrate; the first reflector layer 1 may be DBR. The first reflector layer 1 may include two layers of materials with different refractive indices, AlGaAs and GaAs; the substrate and the first reflector layer 1 may be both N-type or P-type. The N-type is used in this embodiment.

An N-type electrode contact layer 7 is formed on the first reflector layer 1.

An active layer 8 is formed on the N-type electrode contact layer 7, and an oxide layer 2 is formed on the active layer 8. Of course, the oxide layer 2 can also be formed on the N-type electrode contact layer 7 and the active layer 8 can be formed on the oxide layer 2. It is also possible to form an oxide layer 2 on the N-type electrode contact layer 7, form an active layer 8 on the oxide layer 2, and form an oxide layer 2 on the active layer 8.

The active layer 8 includes at least a stacked multi-quantum well layer. The multi-quantum well layer is composed of GaAs, AlGaAs, GaAsP and InGaAs materials stacked and arranged, and the active layer 8 is used to convert electrical energy into light energy. Of course, in some examples, a single quantum well layer can also be used instead of a multiple quantum well layer.

Correspondingly, the current spreading layer 9 is formed on the active layer 8 or the oxide layer 2, and the second reflector layer 3 is formed on the current spreading layer 9; The isolation layer 31 is formed, and then a grating layer 32 is formed on the oxide isolation layer 31. The material of the oxide isolation layer 31 may be Al _x Ga _1-x As (x>0.9), and the material of the grating layer 32 may be Al _y Ga _1-y As (y<0.4).

Then, a part of the grating layer 32 is etched to form a gate trench 5 by etching, and the gate trench 5 extends to the oxide isolation layer 31. The above-mentioned gate trench 5 can be etched by laser etching or chemical etching.

Then, the grating layer 32 and the oxide isolation layer 31 outside the grating region are etched away, and the current spreading layer 9 is exposed.

Then, the oxidation trench 10 is etched, and the oxidation trench 10 extends to the N-type electrode contact layer 7;

The first oxidized region 6 is formed at the position of the oxide isolation layer 31 corresponding to the grating by a wet oxidation process. As an implementation manner, the first oxidized region 6 is the part remaining after the oxide isolation layer 31 is etched. The second oxidized region 12 surrounding the unoxidized region 11 is formed inwardly from the oxidized trench 10 formed in the layer 2.

Through the wet oxidation process, for example, at a temperature of 430°C, 2L/min of nitrogen carries a certain temperature of water vapor for selective wet oxidation. The oxidation depth, that is, the extension depth in the left and right directions in the figure, is controlled by time, so that the oxide layer 2 A second oxidized region 12 is formed, the second oxidized region 12 surrounds the unoxidized region 11 in the oxide layer 2, and the first oxidized region 6 is formed at a position of the oxide isolation layer 31 corresponding to the grating.

Electrodes are formed on the current spreading layer 9 and the N-type electrode contact layer 7 by chemical vapor deposition, electroplating, sputtering, evaporation, etc., wherein the electrode on the current spreading layer 9 is the first electrode 13, and the N-type electrode contact layer The electrode on 7 is the second electrode 14.

As shown in FIG. 8, as a preferred way, the second electrode 14 can also be formed on the side of the first reflector layer 1 away from the active layer 8. The second electrode 14 can be a planar electrode, which can be The surface of the first reflector layer away from the active layer 8 is completely covered to provide a large enough electrode to reduce resistance.

As shown in FIGS. 9-13, as one of the achievable ways, the first reflector layer 1, the active layer 8 and the second reflector layer 3 form a two-stage stepped structure, wherein the first reflector layer 1 forms the first For one step, at least the active layer 8 and the second reflector layer 3 form a second step; it can be understood that the size of the first reflector layer 1 is larger than the size of the active layer 8 and the second reflector layer 3, and, The active layer 8 and the second reflector layer 3 have the same size. Of course, in other embodiments, the size of the first reflector layer 1 is smaller than the sizes of the active layer 8 and the second reflector layer 3, and the sizes of the active layer 8 and the second reflector layer 3 are the same. A current spreading layer 9 is formed between the active layer 8 and the second emitter layer. The material of the current spreading layer 9 is, for example, but not limited to, GaAs. . The grating layer 32 is provided with a first electrode 13 in an area outside the grating. The first electrode 13 can be formed on the grating layer 32 by a deposition method, for example, chemical vapor deposition, electroplating, sputtering, evaporation, or the like.

A substrate is provided; the substrate can be a GaAs substrate.

An N-type electrode contact layer 7 is formed on the first reflector layer 1.

Afterwards, the oxidation trench 10 is etched, and the oxidation trench 10 extends to the N-type electrode contact layer 7;

A first oxidation region 6 is formed at the position of the oxide isolation layer 31 corresponding to the grating by a wet oxidation process, and a self-oxidation trench 10 is formed in the oxidation layer 2 to form a second oxidation region 12 surrounding the unoxidized region 11 inward;

Electrodes are formed on the grating layer 32 and the N-type electrode contact layer 7 by chemical vapor deposition, electroplating, sputtering, evaporation, etc., wherein the electrode on the grating layer 32 is the first electrode 13, and the N-type electrode contact layer 7 The electrode is the second electrode 14.

As shown in FIG. 14, as a preferred way, the second electrode 14 can also be formed on the side of the first reflector layer 1 away from the active layer 8. The second electrode 14 can be a planar electrode, which can be The surface of the first reflector layer away from the active layer 8 is completely covered to provide a large enough electrode to reduce resistance.

As shown in Figures 15-20, as one of the achievable ways, the first reflector layer 1, the active layer 8 and the second reflector layer 3 form a platform structure. It can be understood that the three of them can be of equal size. , There is no step structure; the active layer 8 includes a proton or ion implantation region 17 and a first non-implanted region 18, the proton or ion implantation region 17 surrounds the first non-implanted region 18, the first non-implanted region 18 is used to define the laser emission window. With this structure, the oxide layer 2 is not required, and the etching of the oxide trench 10 is not required, which simplifies the manufacturing process and reduces the complexity of processing.

A substrate is provided; the substrate can be a GaAs substrate.

An N-type electrode contact layer 7 is formed on the first reflector layer 1.

An active layer 8 is formed on the N-type electrode contact layer 7.

The active layer 8 includes at least a stacked multi-quantum well layer composed of GaAs, AlGaAs, GaAsP and InGaAs materials stacked and arranged, and the active layer 8 is used to convert electrical energy into light energy. Of course, in some examples, a single quantum well layer can also be used instead of a multiple quantum well layer.

A current spreading layer 9 is formed on the active layer 8, and a second reflector layer 3 is formed on the current spreading layer 9; the second reflector layer 3 is formed by first forming an oxide isolation layer 31 on the current spreading layer 9 and then A grating layer 32 is formed on the oxide isolation layer 31. The material of the oxide isolation layer 31 may be Al _x Ga _1-x As (x>0.9), and the material of the grating layer 32 may be Al _y Ga _1-y As (y<0.4).

Forming the first oxide region 6 at the position of the oxide isolation layer 31 corresponding to the grating by a wet oxidation process;

A photoresist 15 and other proton or ion implantation process protection structure is provided on the grating layer 32, and the proton or ion implantation process is used to form the proton or ion implantation region 17 and the first non-implantation region 18 in the active layer 8. Proton or ion implantation The area 17 surrounds the first non-injected area 18, and the first non-injected area 18 is used to define the laser exit window. The first non-implanted region 18 is a region covered by the protective structure of the proton or ion implantation process. The main function of the area covered by the protective structure of the proton or ion implantation process is to protect the underlying layers during proton or ion isolation implantation, and prevent the underlying layers from being insulated during the proton or ion isolation implantation. After the proton or ion implantation process is completed, the protective structure of the proton or ion implantation process is removed.

A first electrode 13 is formed on the grating layer 32 by chemical vapor deposition, electroplating, sputtering, evaporation, etc., and a second electrode 14 is formed on the side of the first reflector layer 1 facing away from the active layer 8. 14 can be a planar electrode, which can completely cover the surface of the first reflector layer 1 away from the active layer 8 to provide a sufficiently large electrode and reduce resistance.

Further, the laser exit window is less than or equal to the first oxidized region 6 to improve laser exit efficiency. The active layer 8 also includes a second non-implanted region 16, which is located in the oxide isolation layer 31 and proton or ion implantation. Between area 17. The second uninjected region 16 may serve as a current spreading layer. In order to reduce the resistance of the current spreading layer, annealing is performed after the proton or ion implantation, so that the layers on the proton or ion implantation path and above the proton or ion implantation region 17 restore better conductivity.

Further, the thickness of the oxide isolation layer 31 is less than λ/6, so as to reduce the amount of material used and the difficulty of manufacturing. Wherein, λ is the wavelength of the laser light emitted by the high-contrast grating vertical cavity surface emitting laser.

The embodiment of the present invention also provides a method for manufacturing the above-mentioned high-contrast grating vertical cavity surface emitting laser, which includes:

The first reflector layer 1, the active layer 8 and the second reflector layer 3 are formed in sequence;

The method for forming the second reflector layer 3 includes:

An oxide isolation layer 31 and a grating layer 32 are sequentially formed, and the oxide isolation layer 31 is located between the grating layer 32 and the active layer 8;

Etching at least a part of the grating layer 32 to the grating groove 5 to form the grating, and the grating groove 5 extends to the oxide isolation layer 31;

The oxide isolation layer 31 is subjected to a wet oxidation process through the gate groove 5 to form a first oxide region 6 facing the grating. The refractive index of the first oxide region 6 is smaller than that of the grating. Rate.

This method is a manufacturing method corresponding to the above-mentioned high-contrast grating vertical cavity surface emitting laser. For its principle and effect, please refer to the description of the above-mentioned embodiment, which will not be repeated here.

Further, an electrode contact layer is formed on the side of the first reflector layer 1 facing the active layer 8;

Forming an oxide layer 2 on at least one side of the active layer 8;

Forming a current spreading layer 9 on the side of the oxide isolation layer 31 away from the grating layer 32;

Removing the grating layer 32 other than the region opposed by the grating and the oxide isolation layer 31 other than the region opposed by the grating;

Forming an oxidation trench 10, which extends at least from the second reflector layer 3 to the electrode contact layer;

In the oxidation trench 10 through the wet oxidation process, the oxide layer 2 forms the second oxidation region 12 surrounding the unoxidized region 11 from the oxidation trench 10 inward;

Electrodes are formed on the electrode contact layer and the current spreading layer 9.

Forming an oxide layer 2 on at least one side of the active layer 8;

Through the wet oxidation process in the oxide trench 10, the oxide layer 2 forms the second oxide region 12 surrounding the unoxidized region 11 from the oxide trench 10 inward;

Electrodes are formed on the electrode contact layer and the grating layer 32.

Further, a proton or ion implantation region 17 and a first non-implanted region 18 are formed in the active layer 8 through a proton or ion implantation process, and the proton or ion implantation region 17 surrounds the first non-implanted region 18, The first non-injected region 18 is used to define a laser exit window.

It should be understood that if the terms "center", "vertical", "horizontal", "upper", "lower", "front", "rear", "left", "right", "vertical" are involved in the above "," "horizontal", "top", "bottom", "inner", "outer" and other directions or positional relations are based on the directions or positional relations shown in the drawings, only for the convenience of describing the utility model and simplifying The description does not indicate or imply that the pointed device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

The above description is only a preferred embodiment of the present application and an explanation of the applied technical principles. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to the technical solutions formed by the specific combination of the above technical features, and should also cover the above technical features or their technical solutions without departing from the inventive concept. Other technical solutions formed by arbitrarily combining equivalent features. For example, the above-mentioned features and the technical features disclosed in this application (but not limited to) with similar functions are mutually replaced to form a technical solution.

Claims

A high-contrast grating vertical cavity surface emitting laser, which is characterized in that it comprises:

A first reflector layer, an active layer, and a second reflector layer that are stacked;

The second reflector layer includes an oxide isolation layer and a grating layer, the oxide isolation layer is located between the grating layer and the active layer, at least a part of the grating layer is provided with a grating, and the grating The gate trenches of the second oxide layer extend to the oxide isolation layer, the oxide isolation layer is provided with a first oxide region, the first oxide region supports the grating, and the refractive index of the first oxide region is smaller than that of the grating Refractive index.
The high-contrast grating vertical cavity surface emitting laser according to claim 1, wherein the first reflector layer, the active layer, and the second reflector layer form a three-stage stepped structure;

A current spreading layer is formed on the active layer, a first electrode is formed on the current spreading layer, and the first electrode is located at a step position.
The high-contrast grating vertical cavity surface emitting laser according to claim 1, wherein the first reflector layer, the active layer and the second reflector layer form a two-stage stepped structure, wherein the The first reflector layer forms a first step, and at least the active layer and the second reflector layer form a second step;

A first electrode is provided on the grating layer in an area outside the grating.
The high-contrast grating vertical cavity surface emitting laser according to claim 2 or 3, wherein an oxide layer is formed on at least one side of the active layer, and the oxide layer includes a second oxidized region and an unoxidized region, The second oxidized area surrounds the non-oxidized area, and the non-oxidized area is used to define a laser exit window.
The high-contrast grating vertical cavity surface emitting laser according to claim 1, wherein the first reflector layer, the active layer and the second reflector layer form a platform structure;

The active layer includes a proton or ion implantation region and a first non-implantation region, the proton or ion implantation region surrounds the first non-implantation region, and the first non-implantation region is used to define a laser exit window.
The high-contrast grating vertical cavity surface emitting laser of claim 5, wherein the laser exit window is less than or equal to the first oxidized region, the active layer further includes a second uninjected region, and the first Two non-implanted regions are located between the oxide isolation layer and the proton or ion implanted region.
The high-contrast grating vertical cavity surface emitting laser according to any one of claims 1-3 and 5-6, wherein the thickness of the oxide isolation layer is less than λ/6, where λ is the high contrast The wavelength of the laser light emitted by the grating vertical cavity surface emitting laser.
A method for manufacturing a high-contrast grating vertical cavity surface emitting laser according to any one of claims 1-7, characterized in that it comprises:

Sequentially forming a first reflector layer, an active layer, and a second reflector layer that are stacked;

The method for forming the second reflector layer includes:

Sequentially forming an oxide isolation layer and a grating layer, the oxide isolation layer being located between the grating layer and the active layer;

Etching at least a part of the grating layer to form a grating groove, and the grating groove extends to the oxide isolation layer;

A wet oxidation process is performed on the oxide isolation layer through the gate groove to form a first oxidation region facing the grating, and the refractive index of the first oxidation region is smaller than the refractive index of the grating.
8. The manufacturing method according to claim 8, wherein an electrode contact layer is formed on the side of the first reflector layer facing the active layer;

Forming an oxide layer on at least one side of the active layer;

Forming a current spreading layer on the side of the oxide isolation layer away from the grating layer;

Removing the grating layer outside of the region opposed by the grating and the oxide isolation layer outside the region opposed by the grating;

Forming an oxidation trench, the oxidation trench at least extending from the second reflector layer to the electrode contact layer;

Using the wet oxidation process in the oxidation trench to make the oxide layer form the second oxidation region surrounding the non-oxidized region inwardly from the oxidation trench;

An electrode is formed on the electrode contact layer and the current spreading layer.
8. The manufacturing method according to claim 8, wherein an electrode contact layer is formed on the side of the first reflector layer facing the active layer;

Forming an oxide layer on at least one side of the active layer;

Forming a current spreading layer on the side of the oxide isolation layer away from the grating layer;

Forming an oxidation trench, the oxidation trench at least extending from the second reflector layer to the electrode contact layer;

Using the wet oxidation process in the oxidation trench to make the oxide layer form the second oxidation region surrounding the non-oxidized region inwardly from the oxidation trench;

An electrode is formed on the electrode contact layer and the grating layer.
The manufacturing method according to claim 8, wherein a proton or ion implantation region and a first non-implanted region are formed in the active layer by a proton or ion implantation process, and the proton or ion implantation region surrounds the The first non-injected region is used to define the laser exit window.