JP3262310B2 - Vertical cavity semiconductor laser device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical cavity semiconductor laser device, which is a light source for performing optical interconnection for connecting signals between chips or between boards by light, and for performing two-dimensional parallel signal processing, and manufacturing thereof. It is about the method.

[0002]

2. Description of the Related Art A vertical cavity type semiconductor laser device can have an extremely low threshold value due to a microcavity structure, can be easily formed into a two-dimensional array, and has a high light emission pattern due to a circular light emitting pattern. It is important as a light source for optical interconnection and two-dimensional parallel signal processing because efficient coupling is possible.

FIG. 9 shows an example of a conventional vertical cavity semiconductor laser device. FIG. 9 is a cross-sectional view of a conventional vertical cavity semiconductor laser device taken along a direction perpendicular to the substrate crystal plane. This element is a p-AlGaAs substrate 111
A plurality of layers are collectively grown on (the surface opposite to the surface on which the p-electrode 118 is provided). That is, the substrate 1
On 11, sequentially _{p-Al y Ga 1-y} As / Al z Ga
Distributed Bragg refle composed of a multilayer film of _1-z As (0 <y <z)
ctor, DBR) reflector 112, non-doped Al
_u Ga _1-u As spacer layer 113, GaAs / Al _w G
_{a 1-w As (u ≧} w) superlattice active layer 114, an undoped -Al _u Ga _1-u As spacer layer 115, and n
-Al _y Ga _{1 -y} As / Al _z Ga _{1 -z} As (0 <y <
z) The vertical cavity laser element laminated structure is provided by collectively growing the DBR reflector 116 (the uppermost layer also serves as the n-electrode layer). The thickness of each layer constituting the DBR-type reflecting mirror 112 is a value obtained by further dividing １ of the oscillation wavelength by the refractive index of each layer. The current confinement is achieved by forming a current confinement layer 119 having a high resistance by injecting protons into a spacer layer 115 and a reflecting mirror 116.
And is provided between them. In FIG. 9, the region 201 shown on the current confinement layer 119 by the proton injection is damaged when the proton passes.

FIG. 10 shows another example of a conventional integrated vertical cavity semiconductor laser device, and is a cross-sectional view taken along a direction perpendicular to the crystal plane of the substrate, similarly to FIG.
This element is sequentially formed on a p-AlGaAs substrate 34 by p-Al
a distributed reflection composed of a multilayer film of _{y Ga 1-y As / Al} z Ga 1-z As (0 <y <z) (distribute
d B ragg relfector, DBR) form the reflector 35, a non-doped -Al _u Ga _1-u As spacer layer _{36, GaAs / Al w Ga 1} -w As (u ≧ w) superlattice active layer 37, undoped -Al _u Ga _1-u As spacer layer _{38, n-Al y Ga 1} -y As / Al z Ga 1-z
As (0 <y <z) DBR type reflecting mirror 39 on the structure of the vertical cavity laser device to (top layer also serves as the n electrode layer), further _{n-Al u Ga 1-u} As cladding layer 40, undoped -GaAs absorbing layer _{41, p-Al u Ga 1} -u A
The s cladding layer 43 and the p ⁺ -GaAs contact layer 44 are grown at once. The above structure is used for the vertical cavity laser device 20.
Although the light receiving device 203 is stacked and integrated on the substrate 2, the same applies to the case where a gate, an intensity modulator, and a phase modulator are integrated.

The conventional integrated vertical cavity semiconductor laser device having the above configuration has the following advantages or features. That is, in the device shown in FIG. 10, proton injection is used for the purpose of current confinement, and there is an advantage that the fabrication process is easier as compared with a structure in which a mesa is formed. In the device shown in FIG. 10, when fabricating the device, the upper semiconductor DBR 39 is used to form the light receiving device and the upper electrode 47 of the vertical cavity laser device.
Is etched to the uppermost layer to form a mesa. As a result, although the size of the vertical cavity laser element 202 is inevitably larger than that of the light receiver 203, it is necessary to suppress the light emission size to the light reception size or less in order to reduce the threshold current and prevent the quantum efficiency from deteriorating. It is important to apply a current confinement structure to a laser element, and FIG. 10 shows a structure using ion implantation as an example.

[0006]

However, in any of the device structures shown in FIGS. 9 and 10, the implanted ions pass through the upper electrode layer of the optical receiver and the vertical cavity laser device, which are not necessarily required. It causes deterioration of characteristics and high resistance. That is, the ion passage area (the area indicated by a thin hatch in the figures) leading to the ion implantation area in FIGS. 9 and 10 does not become a high-resistance layer to which a current does not flow because the ion concentration is low. However, since a trap level is generated in the crystal due to damage, there arises a problem that the resistance is increased as compared with the crystal just after growth.
In the structure shown in FIG. 10, it is conceivable that the size of the light receiving device is smaller than the non-implanted region of the ions. However, it is desirable to make the size of the light receiving device as large as possible in order to give an allowance to the element manufacturing process. As other methods of current confinement, (1) a method of forming holes using buried growth and (2) selective etching, and (3) selective oxidation utilizing a difference in Al composition are also being studied. However, in (1), it is technically difficult to bury the interface of AlGaAs forming each layer of the semiconductor DBR and to bury a structure having a thick layer of about 5 μm including the photodetector. In the case of (2), there is a problem in strength in a process such as formation of an insulating film and an electrode after holes are formed in a semiconductor crystal in the middle of a device manufacturing process. (3) has a problem that the Al oxide is present in the vicinity of the active layer, and there is a concern that the characteristics of the Al oxide may deteriorate over time and the active layer may be affected by distortion.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned problems, to provide a stacked integrated vertical cavity semiconductor laser device having a low threshold value, high efficiency, and extremely excellent yield as compared with the prior art, and a method of manufacturing the same. It is to provide.

[0008]

In order to solve the above-mentioned problems, a method of manufacturing a vertical cavity semiconductor laser device according to the present invention comprises an active layer, a pair of spacer layers sandwiching the active layer, A stacked structure comprising a pair of semiconductor multilayer film reflectors sandwiching the spacer layer and a current confinement region in which at least a region surrounding a closed region on a plane formed by the active layer has a high resistance. In the method of manufacturing a vertical cavity semiconductor laser device formed above, the semiconductor substrate is made of AlGaAs, the stacked structure is made up of a first stacked structure and a second stacked structure, and The method comprises: a first crystal growth step of forming the first stacked structure including the active layer on the substrate; and a step of growing an InGaP layer on the first stacked structure. The first
Ion-implanting the current confined region by ion-implanting the laminated structure, removing the InGaP layer, forming the current confined region, and then forming the current confined region on the first laminated structure. And a second crystal growth step of forming two laminated structure portions. Alternatively, a method for manufacturing a vertical cavity semiconductor laser device according to the present invention includes an active layer, a pair of spacer layers sandwiching the active layer, and a pair of semiconductor multilayer film reflectors sandwiching the pair of spacer layers, Manufacturing of a vertical cavity semiconductor laser device in which a laminated structure having at least a current confining region in which a region surrounding a closed region on a plane formed by the active layer has a high resistance is formed on a semiconductor substrate. In the method, the semiconductor substrate is made of AlGaAs, and the stacked structure is a first substrate.
And a second laminated structure part, and
A first crystal growth step of forming the first stacked structure portion including the active layer on the substrate,
A step of growing an AlGaAs layer or a GaAs layer which can be evaporated by heating in a growth apparatus on the first laminated structure, and providing the current confinement region by ion implantation into the first laminated structure; An ion implantation step, a step of removing the evaporable AlGaAs layer or the GaAs layer, and a step of forming the second layered structure on the first layered structure after forming the current confinement region. And a crystal growth step.

Preferably, the first laminated structure has one of the pair of semiconductor multilayer mirrors, while the second laminated structure has a pair of semiconductor multilayer mirrors. Having the other of

[0010]

[0011]

Preferably, oxygen ions are used as the ion species for the ion implantation.

Preferably, a focused ion beam is used as the ion implantation means, and the first crystal growth step, the ion implantation step, and the second crystal growth step are performed consistently in a vacuum apparatus.

Preferably, the method further includes a step of laminating a functional element for optical signal processing on the laminated structure.

Preferably, an optical function area is built in an optical resonator constituted by the pair of semiconductor multilayer film reflecting mirrors.

A vertical cavity type semiconductor laser device according to the present invention comprises at least an active layer, a pair of spacer layers sandwiching the active layer, and a pair of semiconductor multilayer mirrors sandwiching the pair of spacer layers. A vertical cavity semiconductor laser device in which a laminated structure including a current confinement region in which a region surrounding a closed region on a plane formed by the active layer has a high resistance is formed on a semiconductor substrate. The body is formed by a first crystal growth and includes a first laminated structure including the active layer, and after providing the current confinement region by ion-implanting the first laminated structure. A second laminated structure portion formed by recrystallization growth on the first laminated structure portion, and an optical functional region in an optical resonator constituted by the pair of semiconductor multilayer film reflecting mirrors Is built-in And said that you are.

Preferably, the first laminated structure has one of the pair of semiconductor multilayer mirrors, while the second laminated structure has a pair of semiconductor multilayer mirrors. Having the other of

Preferably, a functional element for optical signal processing is laminated on the laminated structure.

[0019]

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows an example of a stacked integrated vertical cavity semiconductor laser device according to the present invention, and is a cross-sectional view in a direction perpendicular to a crystal growth surface of the device. This laser element structure is formed by performing crystal growth twice. In the figure, region A is formed by the first crystal growth, and region B is formed.
Indicates a region formed by the second crystal growth.

In the first crystal growth, reference numeral 101
A laminated structure denoted by reference numerals 106 is formed on the substrate 101. That is, p-AlGaAs substrate 101 has p
-Al _y Ga _{1 -y} As / Al _z Ga _{1 -z} As (0 <y <
z) DBR type reflecting mirror 102, an undoped -Al _u Ga
_1-u As spacer layer 103, GaAs / Al _w Ga _1-w
As (u ≧ w) superlattice structure active layer 104, non-doped
Al _u Ga _1-u As spacer layer 105 and n-Al
_y Ga _1-y As / Al _z Ga _1-z As (0 <u <z) D
A BR-type reflecting mirror 106 is formed. Here, the uppermost layer is I
Growth is stopped in a layer having a low nGaP or Al composition. Further, the number of layers of the DBR-type reflecting mirror 106 located on the upper surface of the semiconductor laser element is equal to or greater than the electric field leakage (penetration depth) when the laser element structure is finally completed, and It is necessary to set the number of layers corresponding to a thickness that allows the standard spread of the ion-implanted layer not to reach the active layer and to be confined in the DBR. Reference numeral 110 denotes a proton injection layer whose resistance is increased by injecting protons.

Next, as a second crystal growth, a new D is formed on the laminated structure formed by the first crystal growth.
A BR-type reflecting mirror 107 is formed. Further, a p-electrode is provided on the DBR-type reflecting mirror 107.

FIG. 2 is a cross-sectional view showing another example of a stacked integrated vertical cavity semiconductor laser device according to the present invention, in which a photodetector is stacked on a surface emitting laser device. In the figure,
The stacked structures indicated by reference numerals 1 to 6 are regions formed by the first crystal growth. In the figure, the region A indicates a region formed by the first crystal growth, and the region B indicates a region formed by the second crystal growth. That is, reference numeral 1 is p
-AlGaAs substrate, 2 is _{p-Al y Ga 1-y} As / A
l _z Ga _1-z AsDBR type reflector, 3 is Al _u Ga _1-u
An As spacer layer, 4 is a GaAs / Al _w Ga _1-w As superlattice structure active layer, 5 is an Al _u Ga _1-u As spacer layer,
And 6 _{n-Al y Ga 1-y} As / Al z Ga 1-z A
s (0 <y <z) DBR type reflecting mirror. Here, the uppermost layer is a layer having a low InGaP or Al composition and the growth is stopped.

In the second crystal growth, n-Al _y Ga
_{The 1-y} As / Al _z Ga _1-z AsDBR type reflector 7 and the light receiver are formed. This light receiver has a laminated structure indicated by reference numerals 8 to 11, and reference numeral 8 is nA
l _u Ga _1-u As cladding layer 9 is undoped -GaA
s absorbent layer, 10 _{p-Al u Ga 1-u} As cladding layer,
Reference numeral 11 denotes a p ⁺ -GaAs contact layer.

Next, a manufacturing process of the stacked integrated vertical cavity semiconductor laser device according to the present invention shown in FIG. 2 will be described with reference to FIG. In FIG. 3, (a) to (d) show the cross-sectional shapes of the laminated structure in each step.

First, in the first crystal growth, p-AlGa
On the As substrate _{1, p-Al y Ga 1} -y As / Al z Ga
_1-z AsDBR shaped reflector _{2, Al u Ga 1-u} As spacer layer _{3, GaAs / Al w Ga 1} -w As superlattice structure active layer _{4, Al u Ga 1-u} As spacer layer 5, and n- A
_{l y Ga 1-y As /} Al z Ga 1-z As (0 <y <z)
A DBR-type reflecting mirror 6 is formed, and an In layer is formed on the uppermost layer.
Crystal growth is stopped by forming a layer having a low GaP or Al composition (FIG. 3A). Next, SiO ₂ was deposited on the growth surface of the layered structure formed by the first crystal growth.
Alternatively, a SiN _x insulating layer 204 is formed, and
A mask for ion implantation is formed with a resist 205 having a thickness of about μm, and oxygen ions (O ⁺ ) are implanted (FIG. 3).
(B)). After that, the resist 205 and the insulating layer 204 are removed by etching. Note that HCl is used when the uppermost layer of the stacked structure formed by the first crystal growth is InGaP.
And a mixture of pure water or a mixture of HCl and H ₃ PO ₄ are removed by selective etching up to the interface with the lower layer having a low Al composition. The top layer is GaAs instead of InGaP
Alternatively, in the case of an AlGaAs layer having a low Al composition, As
The surface of the layer having a high Al composition is exposed by performing thermal cleaning in an H ₃ atmosphere (MOCVD, gas source MBE, CBE apparatus) or As beam (solid source MBE apparatus) (FIG. 3C). Subsequently, the remaining upper DBR layer of the vertical cavity laser element and the layer of the light receiver are formed (FIG. 3D).

FIGS. 4 (a) to 4 (d) are for explaining the manufacturing process of the stacked integrated vertical cavity semiconductor laser device according to the present invention shown in FIG. The method shown in this figure is substantially the same as that shown in FIG. 2, except that a focused ion beam is used for ion implantation. Therefore,
In a process using a focused ion beam, patterning by photolithography is not necessary, so that a vacuum integrated process is possible.

It is generally well known that the ion-implanted region is an electrically high-resistance region. On the other hand, the semiconductor crystal growth temperature is around 700 ° C. by MOCVD.
It is known that the MBE method can be as high as about 600 ° C. However, in the present invention, since the second crystal growth is performed after the ion implantation, it is necessary to maintain high resistance even after the ion implantation region is exposed to a growth temperature of about 1 hour under such a high temperature. is important.

FIG. 5 shows SIMS analysis results of the proton-injected wafer ((a) before annealing and (b) after annealing), and FIG.
3 is a graph showing SIMS analysis results ((a) before annealing and (b) after annealing) of an oxygen ion implanted wafer.

In the case of a proton (hydrogen ion), S in FIG.
As shown by the measurement result of IMS, heating at 750 ° C. for 1 hour causes a drastic decrease in resistance value due to the escape of ions, which is not suitable for use in current constriction. However, in the case of the oxygen ions of the present invention, even if the heat treatment is performed under the same conditions as shown in FIG. 6, there is almost no change in the ion peak position and the ion concentration before and after the heat treatment. Has been experimentally proven to be able to withstand the above.

FIG. 7 is a graph for explaining the characteristics of the stacked integrated vertical cavity semiconductor laser device according to the present invention shown in FIG. In the figure, (a) shows the current-to-light output characteristic and current-to-voltage characteristic of the surface emitting laser element portion, and the solid line shows the one of the present invention, and the broken line shows that of the conventional element (see FIG. 10). . The device of the present invention realizes a reduction in series resistance as compared with the characteristics of the conventional device, and as a result, the power conversion efficiency is increased. On the other hand, in the figure, (b) shows the current-voltage characteristics of the photodetector portion, where the solid line indicates the present invention and the dashed line indicates the conventional one. In the present invention, since the element system is made sufficiently large compared to the light emission diameter and only the minimum necessary ion implantation portion is present, the dark current can be reduced as compared with the prior art.

FIG. 8 is a cross-sectional view showing another embodiment of a stacked integrated vertical cavity semiconductor laser device according to the present invention. A light receiving device is stacked on a surface emitting laser device. In the figure, a region A indicates a region formed by the first crystal growth, and a region B indicates a region formed by the second crystal growth. It has a laminated structure. That is, the laminated structure on the p-AlGaAs substrate 18, sequentially _{p-Al y Ga 1-y} As / Al z Ga
_1-z AsDBR shaped reflecting mirror _{19, Al u Ga 1-u} As spacer layer _{20, GaAs / Al w Ga 1} -w As superlattice active layer _{21, Al u Ga 1-u} As spacer layer 22, and n electrodes The layer 23 is formed by batch growth. A p-electrode is formed on the back side of the p-AlGaAs substrate 18.

Further, a light receiver is formed on the laminated structure by the second crystal growth. The layer formed by the second crystal growth is the Al _u Ga _1-u As spacer layer 2
_{4, Al x 'Ga 1-} x' As / Al w 'Ga 1-w' As superlattice structure saturable absorption region _{25, Al u Ga 1-u} As spacer layer 26, and _{p-Al y} Ga _1-y As / Al _z Ga _1-z
This is an AsDBR type reflection mirror 27. Reference numeral 29 denotes an n-electrode, 30 denotes a p-electrode, 31 denotes SiN _x or SiO
Reference numerals ₂ and 32 denote ion implantation regions for confining active layer current;
Reference numeral 3 denotes a saturable absorption layer ion implantation region.

The feature of the device shown in FIG. 8 is that the GaAs / Al
_w Ga _1-w As superlattice structure active layer 21 and Al _{x ′} Ga _{1-x ′}
As / Al _{w ′} Ga _{1-w ′} As superlattice structure saturable absorption region 2
5 or a phase adjusting layer is formed. In this case, the first growth is performed up to the n-electrode layer 23 on the active layer 21 and oxygen ion implantation 32 for current confinement is performed.
Is performed, an upper saturable absorption layer or phase adjusting layer 25 and an upper DBR layer 27 are formed. By employing such a forming method, the effective diameter of each region with respect to the optical resonator can be made equal, which is effective in suppressing a wasteful increase in the threshold current and the operation driving power.

Although the stacked integrated vertical cavity semiconductor laser device described above describes ion implantation into an n-doped layer, the same effect can be obtained in the case of ion implantation into a p-doped layer. Also, AlGaAs / GaAs
Although it is related to the system, InGaAsP / In
The same operation and effect can be obtained in P-based and InGaAs / GaAs strained superlattice systems. In the above description, a light-receiving device or a saturable absorption layer has been described as an example of an element to be stacked and integrated on a surface-emitting laser element.

[0037]

As described above, the present invention relates to a vertical cavity type semiconductor laser device, in which a part of an upper semiconductor multilayer film reflecting mirror of a vertical cavity type semiconductor laser device or an active layer is grown in a first growth. After growing up to the upper electrode layer and implanting oxygen ions for the purpose of current confinement, removal of the uppermost InGaP in the first growth or removal of the uppermost GaAs or AlGaAs from AsH _{3 is performed.}
By performing removal and regrowth after performing thermal cleaning in an atmosphere or by irradiating an As beam, the effect of forming a vertical cavity type semiconductor laser device having high efficiency and reliability with a low threshold value can be obtained. is there.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view for explaining a configuration example of a vertical cavity semiconductor laser device according to the present invention.

FIG. 2 is a schematic cross-sectional view for explaining a configuration example of a vertical cavity semiconductor laser device according to the present invention (a structure in which a photodetector is stacked and integrated on a vertical cavity).

FIG. 3 is a diagram for explaining the steps of ion implantation and regrowth in a vertical cavity semiconductor laser device according to the present invention, wherein (a), (b), (c) and (d) are each It is a typical sectional view for explaining a process.

FIG. 4 is a view for explaining steps of ion implantation and regrowth by a focused ion beam in a vertical cavity semiconductor laser device according to the present invention, wherein (a), (b),
(C) and (d) are typical sectional views for explaining each step.

FIG. 5 is a graph showing SIMS analysis results of a proton-injected wafer in a vertical cavity semiconductor laser device according to the present invention, wherein (a) is before annealing and (b) is after annealing.

FIG. 6 is a graph showing SIMS analysis results of an oxygen ion-implanted wafer in the vertical cavity semiconductor laser device according to the present invention, wherein (a) is before annealing and (b) is after annealing.

FIG. 7 is a graph showing current-voltage characteristics of a vertical cavity semiconductor laser device according to the present invention, wherein FIG. 7 (a) shows a surface emitting laser device having a device structure in which a photodetector is stacked and integrated on a vertical cavity; Current vs. optical output characteristics and current vs. voltage characteristics,
(B) shows a current-voltage characteristic of a photodetector having an element structure in which a photodetector is stacked and integrated on a vertical resonator.

FIG. 8 is a schematic cross-sectional view for explaining a configuration example of a vertical cavity semiconductor laser device according to the present invention (a structure in which saturable absorption layers are stacked and integrated in upper and lower DBRs of a vertical cavity).

FIG. 9 is a sectional view of a conventional vertical cavity semiconductor laser device.

FIG. 10 is a sectional view of a conventional stacked integrated vertical cavity semiconductor laser device.

[Explanation of symbols]

1 p-AlGaAs substrate _{2 p-Al y Ga 1-} y As / Al z Ga 1-z AsDB
R-shaped reflector 3 Al _u Ga _1-u As spacer layer _{4 GaAs / Al w Ga 1-} w As superlattice active layer 5 Al _u Ga _1-u As spacer layer _{6 n-Al y Ga 1-} y As / Al _z Ga _1-z AsDB
R-type reflector (first-time _{growth) 7 n-Al y Ga 1} -y As / Al z Ga 1-z AsDB
R-type reflector (second time of _{growth) 8 n-Al u Ga 1} -u As cladding layer 9 undoped -GaAs absorbent layer _{10 p-Al u Ga 1-} u As cladding layer 11 p ⁺ -GaAs contact layer 12 p electrode 13 n electrode 14 SiN _x or SiO ₂ 15 p electrode 16 active layer current confinement ion implantation region 17 for receiver ion-implanted region 18 p-AlGaAs substrate _{19 p-Al y Ga 1-} y As / Al z Ga 1-z AsD
BR type reflecting mirror 20 Al _u Ga _1-u As spacer layer _{21 GaAs / Al w Ga 1-} w As superlattice active layer 22 Al _u Ga _1-u As spacer layer 23 n electrode layer 24 Al _u Ga _1-u As spacer layer _{25 Al x 'Ga 1-x} ' As / Al w 'Ga 1-w' As superlattice structure saturable absorption region 26 Al _u Ga _1-u As spacer layer _{27 p-Al y Ga 1-} y As / Al _z Ga _1-z AsD
BR type reflector 28 p electrode 29 n electrode 30 p electrode 31 SiN _x or SiO ₂ 32 active layer for current confinement ion implantation region 33 saturable absorbing layer ion-implanted region 34 p-AlGaAs substrate 35 p-Al _y Ga _{1- y} As / Al _z Ga _1-z AsD
BR type reflector 36 Al _u Ga _1-u As spacer layer _{37 GaAs / Al w Ga 1-} w As superlattice active layer 38 Al _u Ga _1-u As spacer layer _{39 n-Al y Ga 1-} y As / Al _z Ga _1-z AsD
BR shaped reflector _{40 n-Al u Ga 1-} u As cladding layer 41 doped -GaAs absorbing layer 42 SiN _x or _{SiO 2 43 p-Al u Ga} 1-u As cladding layer 44 p ⁺ -GaAs contact layer 45 p electrode 46 p electrode 47 n electrode 48 active layer current confinement ion implantation region 49 for receiver ion implantation region 101 p-AlGaAs substrate _{102 p-Al y Ga 1-} y As / Al z Ga 1-z As
DBR type reflector 103 Al _u Ga _1-u As spacer layer _{104 GaAs / Al w Ga 1-} w As superlattice active layer 105 Al _u Ga _1-u As spacer layer _{106 n-Al y Ga 1-} y As / Al _z Ga _1-z As
DBR type reflector (first-time _{growth) 107 n-Al y Ga 1} -y As / Al z Ga 1-z As
DBR type reflector (second time of growth) 108 p electrode 109 n electrode 110 ion implantation region 111 p-AlGaAs substrate _{112 p-Al y Ga 1-} y As / Al z Ga 1-z As
DBR type reflector 113 Al _u Ga _1-u As spacer layer _{114 GaAs / Al w Ga 1-} w As superlattice active layer 115 Al _u Ga _1-u As spacer layer _{116 n-Al y Ga 1-} y As / Al _z Ga _1-z As
DBR type reflector (first-time _{growth) 117 n-Al y Ga 1} -y As / Al z Ga 1-z As
DBR reflector (second growth) 118 p-electrode 119 n-electrode 120 ion-implanted area 201 area through which ions have passed 202 vertical cavity laser element 203 photoreceiver

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hidetoshi Iwamura 3-19-2 Nishi-Shinjuku, Shinjuku-ku, Tokyo Within Nippon Telegraph and Telephone Corporation (72) Takashi Kurokawa 3-19, Nishishinjuku, Shinjuku-ku, Tokyo No. 2 Within Nippon Telegraph and Telephone Corporation (56) References JP-A-4-14276 (JP, A) JP-A-5-218575 (JP, A) JP-A-6-97597 (JP, A) 5-235473 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01S 5/00-5/50

Claims (9)

(57) [Claims] 1. An active layer, a pair of spacer layers sandwiching the active layer, a pair of semiconductor multilayer mirrors sandwiching the pair of spacer layers, and at least a closed area on a plane formed by the active layer. A method of manufacturing a vertical cavity type semiconductor laser device in which a laminated structure having a current constriction region having a region having a high resistance is formed on a semiconductor substrate, wherein the semiconductor substrate is made of AlGaAs; The body includes a first laminated structure and a second laminated structure, and the manufacturing method includes: a first crystal for forming the first laminated structure including the active layer on the substrate. A growing step; a step of growing an InGaP layer on the first laminated structure; an ion implantation step of providing the current confinement region by implanting ions into the first laminated structure; Work to remove And a second crystal growth step of forming the second laminated structure on the first laminated structure after forming the current confinement region. Laser element manufacturing method. 2. An active layer, a pair of spacer layers sandwiching the active layer, a pair of semiconductor multilayer mirrors sandwiching the pair of spacer layers, and at least a closed area on a plane formed by the active layer. A method of manufacturing a vertical cavity type semiconductor laser device in which a laminated structure having a current constriction region having a region having a high resistance is formed on a semiconductor substrate, wherein the semiconductor substrate is made of AlGaAs; The body includes a first laminated structure and a second laminated structure, and the manufacturing method includes: a first crystal for forming the first laminated structure including the active layer on the substrate. A growing step; and a step of growing an AlGaAs layer or a GaAs layer that can be evaporated by heating in a growth apparatus on the first laminated structure; and ion-implanting the first laminated structure with the current. Stenosis area Providing an ion implantation step; removing the evaporable AlGaAs layer or the GaAs layer; forming the current confinement region, and then forming the second laminated structure on the first laminated structure. 2. A method for manufacturing a vertical cavity semiconductor laser device, comprising: 3. The first multilayer structure includes one of the pair of semiconductor multilayer mirrors, while the second multilayer structure includes one of the pair of semiconductor multilayer mirrors. 3. The method of manufacturing a vertical cavity semiconductor laser device according to claim 1, further comprising: 4. The method of manufacturing a vertical cavity semiconductor laser device according to claim 1, wherein oxygen ions are used as ion species for the ion implantation. 5. A method according to claim 1, wherein a focused ion beam is used as said ion implantation means, and said first crystal growth step, said ion implantation step, and said second crystal growth step are performed consistently in a vacuum apparatus. 5. The method for manufacturing a vertical cavity semiconductor laser device according to claim 1, wherein 6. The vertical cavity semiconductor laser device according to claim 1, further comprising a step of laminating a functional element for optical signal processing on the laminated structure. Production method. 7. The vertical resonator type according to claim 1, wherein an optical function region is built in the optical resonator formed by the pair of semiconductor multilayer film reflecting mirrors. A method for manufacturing a semiconductor laser device. 8. An active layer, a pair of spacer layers sandwiching the active layer, a pair of semiconductor multilayer mirrors sandwiching the pair of spacer layers, and at least a closed region on a plane formed by the active layer. In a vertical cavity semiconductor laser device in which a stacked structure including a current constriction region in which a region surrounding the semiconductor device has a high resistance is formed on a semiconductor substrate, the stacked structure is formed by a first crystal growth. A first stacked structure portion including the active layer and the current constriction region provided by ion-implanting the first stacked structure portion, and then recrystallizing on the first stacked structure portion. A second laminated structure portion formed by growing, and an optical function region is built in an optical resonator constituted by the pair of semiconductor multilayer film reflecting mirrors. Resonator type semiconductor laser element. 9. The first multilayer structure includes one of the pair of semiconductor multilayer mirrors, while the second multilayer structure includes one of the pair of semiconductor multilayer mirrors. 9. The vertical cavity semiconductor laser device according to claim 8, comprising the other of the following.