JPH09129962A - Vertical resonator type semiconductor laser element and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a laminated integrated vertical resonator type semiconductor element having a low threshold and a high efficiency at a high yield by forming a second laminated structure section on a first laminated structure section containing an active layer after ions are implanted into the first laminated structure section. SOLUTION: In the first crystal growing process of the manufacturing process of a vertical resonator type semiconductor laser element, a p-type DBR-shaped reflecting mirror 102, a nondoped spacer layer 103, an active layer 104 having a super- lattice structure, a nondoped spacer layer 105, and an n-type DBR-shaped reflecting mirror 106 are successively formed on a substrate 101. The number of layers constituting the topmost reflecting mirror 106 of the laser element is set so that the thickness of the mirror 106 can prevent the seepage of an electric field when the final structure of the laser element is completed and the standard extent of an ion implanted layer cannot reach the active layer and the ion implanted layer is enclosed in the DBR. Then a proton-implanted layer 110 which is increased in resistance by implanting protons is formed and a new DBR-shaped reflecting mirror 107 is formed on the first laminated structure in a second crystal growing process and a p-electrode 108 is provided on the mirror 107.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical cavity type semiconductor laser device which is a light source for optical interconnection for connecting signals between chips or between boards with light and a two-dimensional parallel signal processing and its manufacture. It is about the method.

[0002]

2. Description of the Related Art A vertical cavity type semiconductor laser device is capable of achieving an extremely low threshold value due to an extremely minute cavity structure, is easy to form a two-dimensional array, and has a circular light emission pattern, so that it has a high optical density with that of a fiber. It is important as a light source for optical interconnection and two-dimensional parallel signal processing because it enables efficient coupling.

An example of a conventional vertical cavity type semiconductor laser device is shown in FIG. FIG. 9 is a sectional view taken along a direction perpendicular to a substrate crystal plane of a conventional vertical cavity type semiconductor laser device. This device has a p-AlGaAs substrate 111.
A plurality of layers are collectively grown on (the surface opposite to the surface on which the p electrode 118 is provided). That is, the substrate 1
On 11, sequentially _{p-Al y Ga 1-y} As / Al z Ga
_A distributed Bragg reflector composed of a multilayer film of _1-z As (0 <y <z)
ctor, DBR) type reflecting mirror 112, non-doped-Al
_u Ga _1-u As spacer layer 113, GaAs / Al _w G
a _1-w As (u ≧ w) superlattice structure active layer 114, non-doped-Al _u Ga _1-u As spacer layer 115, and n
-Al _y Ga _1-y As / Al _z Ga _1-z As (0 <y <
z) A DBR type reflecting mirror 116 (the uppermost layer also serves as an n electrode layer) is grown in a batch to provide a vertical cavity laser element laminated structure. The thickness of each layer forming the DBR reflecting mirror 112 is a value obtained by further dividing a quarter of the oscillation wavelength by the refractive index of each layer. The current confinement is performed by injecting protons into the current constriction layer 119 having a high resistance to form the spacer layer 115 and the reflecting mirror 116.
It is installed between and. In FIG. 9, the region 201 shown on the current confinement layer 119 formed by the proton injection is damaged when the protons pass through.

Next, FIG. 10 shows another example of a conventional integrated vertical cavity type semiconductor laser device, which is a sectional view taken along a direction perpendicular to the crystal plane of the substrate similarly to FIG.
This device is formed on the p-AlGaAs substrate 34 in order of p-Al.
distributed reflection (distributed) composed of a multilayer film of _y Ga _1-y As / Al _z Ga _1-z As (0 <y <z)
d Bragg reflector (DBR) type reflecting mirror 35, non-doped-Al _u Ga _1-u As spacer layer 36, GaAs / Al _w Ga _1-w As (u ≧ w) superlattice structure active layer 37, non-doped-Al _u Ga _1-u As spacer layer _{38, n-Al y Ga 1} -y As / Al z Ga 1-z
On the structure of the vertical cavity laser device up to the As (0 <y <z) DBR type reflection mirror 39 (the uppermost layer also serves as the n electrode layer), an n-Al _u Ga _1-u As clad layer 40, a non-doped layer are further provided. -GaAs absorbing layer _{41, p-Al u Ga 1} -u A
The s clad layer 43 and the p ⁺ -GaAs contact layer 44 are collectively grown. The above structure has a vertical cavity laser device 20.
Although the structure is such that the light receiver 203 is laminated and integrated on top of 2, the same applies to the case where the gate and the intensity modulator / phase modulator are integrated.

The conventional integrated vertical cavity type semiconductor laser device having the above structure has the following advantages or characteristics. That is, in the element of FIG. 10, proton injection is used for the purpose of current confinement, and there is an advantage that the manufacturing process is easier than in the structure of forming a mesa. Further, in the device of FIG. 10, when the device is manufactured, the upper surface semiconductor DBR 39 is formed for forming a light receiver and forming the upper electrode 47 of the vertical cavity laser device.
To the uppermost layer to form mesas. As a result, although the size of the vertical cavity laser element 202 is necessarily larger than that of the photodetector 203, it is necessary to suppress the emission size to be equal to or smaller than the photodetection size in order to reduce the threshold current and prevent deterioration of quantum efficiency. It is important to provide the laser element with a current confinement structure, and FIG. 10 shows a structure using ion implantation as an example.

[0006]

However, in any of the device structures shown in FIGS. 9 and 10, the implanted ions pass through the upper electrode layers of the photodetector and the vertical cavity laser device, which are not necessarily required. This will cause deterioration of characteristics and increase in resistance. That is, the ion passage region (region indicated by a thin hatch in the drawings) reaching the ion implantation region in FIGS. 9 and 10 does not become a high resistance layer in which a current does not flow because the ion concentration is low. However, since a trap level is generated in the crystal due to damage, there arises a problem that the resistance increases as compared with the crystal just after growth.
In the structure of FIG. 10, it is possible to make the size of the photoreceiver equal to or smaller than the non-ion-implanted region, but it is desirable to make the size of the photoreceiver as large as possible in order to allow the device fabrication process to have tolerance. As other methods of current confinement, (1) buried growth, (2) method of forming vacancies using selective etching, and (3) selective oxidation utilizing difference in Al composition are also under study. However, in (1), it is technically difficult to embed the interface of AlGaAs forming each layer of the semiconductor DBR, and to embed a thick structure including the photodetector such that the layer thickness is about 5 μm. In (2), there is a problem in strength in the process of forming an insulating film / electrode after forming holes in the semiconductor crystal in the middle of the device manufacturing process. In the case of (3), the Al oxide is present in the vicinity of the active layer, and there is a problem that deterioration of the characteristics over time, influence of strain on the active layer, and the like may occur.

Therefore, an object of the present invention is to solve the above problems and to provide a stacked integrated vertical cavity type semiconductor laser device having a low threshold value, high efficiency, and an extremely excellent yield as compared with the prior art, and a manufacturing method thereof. Is to provide.

[0008]

In order to solve the above-mentioned problems, a method for manufacturing a vertical cavity type semiconductor laser device according to the present invention comprises an active layer, a pair of spacer layers sandwiching the active layer, and a pair of the spacer layers. A semiconductor substrate having a pair of semiconductor multilayer film reflecting mirrors sandwiching the spacer layer, and at least a current confinement region in which a region surrounding a closed region on a plane formed by the active layer has a high resistance. In the method of manufacturing a vertical cavity type semiconductor laser device formed above, a first crystal growth step of forming a first laminated structure part including the active layer on the substrate, and the first laminated structure. Ion implantation step of providing the current confinement region by ion implantation into the structure portion, and second crystal forming the second laminated structure portion on the first laminated structure portion after forming the current constriction portion. With a growth process The layered structure is characterized by comprising the above first laminated structure and the second laminated structure.

Preferably, the first laminated structure portion has one of the pair of semiconductor multilayer film reflecting mirrors and one of the pair of spacer layers, while the second laminated structure portion. The section has the other of the pair of semiconductor multilayer film reflecting mirrors and the other of the pair of spacer layers.

Preferably, the semiconductor substrate is made of GaAs, and in the first crystal growth step, an InGaP layer is grown on the first laminated structure portion, and the second crystal growth step is further performed.
In the crystal growth step, the InGaP layer is removed before forming the second stacked structure portion.

Preferably, the semiconductor substrate is made of GaAs, and in the first crystal growth step, an AlGaAs layer or a GaAs layer which can be vaporized by heating in a growth apparatus is grown at the end of the growth of the first laminated structure portion. Then, before forming the second laminated structure portion in the second crystal growth step, the evaporable AlGaAs layer or GaAs layer is removed in the AsH ₃ atmosphere or during irradiation with the As beam.

[0012] Preferably, oxygen ions are used as the ion species for the ion implantation.

Preferably, a focused ion beam is used as the means for implanting ions, and the first crystal growth step, the ion implantation step, and the second crystal growth step are performed consistently in a vacuum apparatus.

Preferably, the method further comprises the step of laminating a functional element for optical signal processing on the laminated structure.

Preferably, an optical functional region is built in the optical resonator constituted by the pair of semiconductor multilayer film reflecting mirrors.

A vertical cavity type semiconductor laser device according to the present invention includes at least an active layer, a pair of spacer layers sandwiching the active layer, and a pair of semiconductor multilayer film reflecting mirrors sandwiching the pair of spacer layers. In the vertical cavity type semiconductor laser device, wherein a laminated structure including a region confining a closed region on a plane formed by the active layer and a current confinement region having a high resistance is formed on a semiconductor substrate, the laminated structure The body is formed by the first crystal growth and includes the first layered structure portion including the active layer, and the current confinement region provided by ion implantation into the first layered structure portion. It has a 2nd laminated structure part formed by performing recrystallization growth on the said 1st laminated structure part, It is characterized by the above-mentioned.

Preferably, the first laminated structure portion has one of the pair of semiconductor multilayer film reflecting mirrors and one of the pair of spacer layers, while the second laminated structure portion is provided. The section has the other of the pair of semiconductor multilayer film reflecting mirrors and the other of the pair of spacer layers.

Preferably, a functional element for optical signal processing is laminated on the laminated structure.

Preferably, an optical functional region is built in an optical resonator constituted by the pair of semiconductor multilayer film reflecting mirrors of the vertical resonator type semiconductor.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows an example of a stacked integrated vertical cavity type semiconductor laser device according to the present invention, which is a sectional view in a direction perpendicular to a crystal growth surface of the device. This laser device structure is formed by performing crystal growth twice. In the figure, the region A is formed by the first crystal growth, and the region B is
The region of indicates the region formed by the second crystal growth.

In the first crystal growth, reference numeral 101 is used.
The laminated structures denoted by 106 to 106 are formed on the substrate 101. That is, p is sequentially formed on the p-AlGaAs substrate 101.
-Al _y Ga _1-y As / Al _z Ga _1-z As (0 <y <
z) DBR type reflecting mirror 102, non-doped-Al _u Ga
_1-u As spacer layer 103, GaAs / Al _w Ga _1-w
As (u ≧ w) superlattice structure active layer 104, non-doped-
Al _u Ga _1-u As spacer layer 105 and n-Al
_y Ga _1-y As / Al _z Ga _1-z As (0 <u <z) D
The BR type reflecting mirror 106 is formed. Here, the top layer is I
The growth is stopped in a layer having a low nGaP or Al composition. Further, the number of layers of the DBR type reflecting mirror 106 located on the upper surface of the semiconductor laser device is equal to or larger than the leaching (penetration depth) of the electric field when the laser device structure is finally completed, and It is necessary to set the standard spread of the ion-implanted layer to the number of layers that does not reach the active layer and can be confined in the DBR. Reference numeral 110 is a proton-injection layer having a high resistance by injecting protons.

Next, as the second crystal growth, a new D is formed on the laminated structure formed by the first crystal growth.
The BR type reflecting mirror 107 is formed. Further, a p-electrode is provided on the DBR type reflecting mirror 107.

FIG. 2 is a cross-sectional view showing another example of a stacked integrated vertical cavity type semiconductor laser device according to the present invention, in which a photodetector is stacked and integrated on a surface emitting laser device. In the figure,
The laminated structures denoted by reference numerals 1 to 6 are regions formed by the first crystal growth. Further, in the figure, the region A is formed by the first crystal growth, and the region B is the region formed by the second crystal growth. That is, reference numeral 1 is p
-AlGas substrate, 2 is _{p-Al y Ga 1-y} As / Al
_z Ga _1-z AsDBR type reflecting mirror, 3 is Al _u Ga _1-u A
s spacer layer 4 is _{GaAs / Al w Ga 1-w} As superlattice active layer, 5 is Al _u Ga _1-u As spacer layer, and 6 is _{n-Al y Ga 1-y} As / Al z Ga 1 _-z As
(0 <y <z) DBR type reflecting mirror. Here, the uppermost layer is a layer having a low InGaP or Al composition and growth is stopped.

[0025] In the second round of the crystal growth n-Al _y Ga
_{The 1-y} As / Al _z Ga _1-z AsDBR type reflecting mirror 7 and the light receiver are formed. This light receiver has a laminated structure shown by reference numerals 8 to 11, and the reference numeral 8 is n-A.
l _u Ga _1-u As cladding layer 9 is undoped -GaA
s absorbent layer, 10 _{p-Al u Ga 1-u} As cladding layer,
11 is a p ⁺ -GaAs contact layer.

Next, the manufacturing process of the stacked integrated vertical cavity type semiconductor laser device according to the present invention shown in FIG. 2 will be described with reference to FIG. In FIG. 3, (a) to (d) show cross-sectional shapes of the laminated structure in each step.

First, p-AlGa was used in the first crystal growth.
on s substrate _{1, p-Al y Ga 1} -y As / Al z Ga 1-z
AsDBR reflecting mirror 2, Al _u Ga _1-u As spacer layer 3, GaAs / Al _w Ga _1-w As superlattice structure active layer 4, Al _u Ga _1-u As spacer layer 5, and n-Al.
_y Ga _1-y As / Al _z Ga _1-z As (0 <y <z) D
The BR type reflector 6 is formed and InG is formed on the uppermost layer.
Crystal growth is stopped by forming a layer having a low aP or Al composition (FIG. 3A). Next, an SiO ₂ or SiN _x insulating layer 204 is formed on the growth surface of the laminated structure formed by the first crystal growth, and the thickness is further 5 μm.
A mask for ion implantation is formed with a resist 205 having a thickness of about m, and oxygen ions (O ⁺ ) are implanted (FIG. 3).
(B)). After that, the resist 205 and the insulating layer 204 are removed by etching. If the uppermost layer of the laminated structure formed by the first crystal growth is InGaP, HCl is used.
And a pure water mixed solution or a mixed solution of HCl and H ₃ PO ₄ are removed by selective etching up to the interface with the lower layer having a low Al composition. The top layer is not InGaP but GaAs
Alternatively, if the AlGaAs layer has a low Al composition, As
The surface of the layer having a high Al composition is exposed by performing thermal cleaning in an H ₃ atmosphere (MOCVD, gas source MBE, CBE apparatus) or As beam (solid source MBE apparatus) (FIG. 3C). Subsequently, the remaining upper surface DBR layer of the vertical cavity laser device and the layer of the photodetector are formed (FIG. 3D).

FIGS. 4A to 4D are for explaining the manufacturing process of the stacked integrated vertical cavity type semiconductor laser device according to the present invention shown in FIG. The method shown in this figure is similar to that shown in FIG. 2, except that a focused ion beam is used for implanting ions. Therefore,
In the process using a focused ion beam, patterning by photolithography is not necessary, so that a vacuum integrated process is possible.

By the way, it is generally well known that the ion-implanted region becomes a region having high electrical resistance, while the semiconductor crystal growth temperature is about 700 ° C. by MOCVD.
It is known that the MBE method also reaches a high temperature of about 600 ° C. However, in the present invention, since the second crystal growth is performed after the ion implantation, it is possible to maintain the high resistance even after the ion implantation region is exposed to the growth temperature of about 1 hour at such a high temperature. is important.

FIG. 5 shows SIMS analysis results of the proton-implanted wafer ((a) before annealing, (b) after annealing), and FIG.
3 is a graph showing SIMS analysis results of an oxygen ion implanted wafer ((a) before annealing, (b) after annealing).

In the case of a proton (hydrogen ion), S in FIG.
As the IMS measurement results show, heating at 750 ° C. for 1 hour drastically reduces the resistance value due to the loss of ions, which is not suitable for current constriction. However, in the case of the oxygen ions of the present invention, even if heat treatment is performed under the same conditions as shown in FIG. 6, there is almost no change in the ion peak position and the ion concentration before and after the heat treatment. Has been experimentally proved to be sufficiently durable.

FIG. 7 is a graph for explaining the characteristics of the stacked integrated vertical cavity type semiconductor laser device according to the present invention shown in FIG. In the figure, (a) shows current-optical output characteristics and current-voltage characteristics of the surface-emitting laser element part, the solid line shows the present invention, and the broken line shows the conventional element (see FIG. 10). . The element of the present invention realizes a reduction in series resistance as compared with the characteristics of the conventional element, and as a result, the power conversion efficiency is increased. On the other hand, in the figure, (b) shows the current-voltage characteristics of the light receiving portion, the solid line shows the present invention, and the broken line shows the conventional one. In the present invention, the device system is made sufficiently larger than the emission diameter, and only the minimum necessary ion-implanted portion is present, so that the dark current can be reduced as compared with the prior art.

FIG. 8 is a sectional view showing another embodiment of a stacked integrated vertical cavity type semiconductor laser device according to the present invention, in which a photodetector is stacked and integrated on a surface emitting laser device. In the figure, the region A is formed by the first crystal growth, and the region B is the region formed by the second crystal growth. It has a laminated structure. That is, the laminated structure on the p-AlGaAs substrate 18, sequentially _{p-Al y Ga 1-y} As / Al z Ga
_1-z AsDBR type reflection mirror 19, Al _u Ga _1-u As spacer layer 20, GaAs / Al _w Ga _1-w As superlattice structure active layer 21, Al _u Ga _1-u As spacer layer 22, and n-electrode The layer 23 is grown collectively. A p electrode is formed on the back side of the p-AlGaAs substrate 18.

Further, a photodetector is formed on this laminated structure by the second crystal growth. The layer formed by the second crystal growth is the Al _u Ga _1-u As spacer layer 2
_{4, Al x 'Ga 1-} x' As / Al w 'Ga 1-w' As superlattice structure saturable absorption region _{25, Al u Ga 1-u} As spacer layer 26, and _{p-Al y} Ga _1-y As / Al _z Ga _1-z
It is an AsDBR type reflecting mirror 27. Reference numeral 29 is an n-electrode, 30 is a p-electrode, 31 is SiN _x or SiO.
₂ and 32 are ion implantation regions for active layer current constriction, and 3
Reference numeral 3 is an ion implantation region for the saturable absorption layer.

The characteristic of the device shown in FIG. 8 is that GaAs / Al is provided between the DBR type reflecting mirrors 27 and 19 located above and below.
_w Ga _1-w As superlattice active layer 21 and the Al _{x 'Ga 1-x'
As / Al w 'Ga 1-} w' As superlattice structure saturable absorption region 2
5 or a phase adjustment layer or the like is formed. In this case, the first growth is performed up to the n electrode layer 23 above the active layer 21, and oxygen ion implantation 32 for current confinement is performed.
After that, the saturable absorption layer or phase adjusting layer 25 on the upper side and the DBR layer 27 on the upper surface are formed. By adopting such a forming method, it is possible to equalize the effective diameters of the respective regions with respect to the optical resonator, and it is effective in suppressing an unnecessary increase in the threshold current and the operation drive power.

The stacked integrated vertical cavity type semiconductor laser device described above describes the ion implantation into the n-doped layer, but the same effect can be obtained in the case of the ion implantation into the p-doped layer. Also, AlGaAs / GaAs
InGaAsP / In, although related to the system
The same action and effect can be obtained also in the P type and InGaAs / GaAs strained superlattice type. In the above description, the light receiving device or the saturable absorbing layer is used as an example of the device to be laminated and integrated on the surface emitting laser device.

[0037]

As described above, according to the present invention, in the vertical cavity type semiconductor laser device, in the first growth, up to a part of the upper semiconductor multilayer film reflection mirror of the vertical cavity type semiconductor laser device or the active layer. After growing up to the upper electrode layer and implanting oxygen ions for the purpose of current confinement, the uppermost layer InGaP of the first growth is removed or the uppermost layer GaAs or AlGaAs is AsH ₃
The vertical cavity type semiconductor laser device having a low threshold value, high efficiency and high reliability can be formed by removing and regrowth after performing thermal cleaning in the atmosphere or by irradiating with an As beam. is there.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view for explaining a configuration example of a vertical cavity type semiconductor laser device according to the present invention.

FIG. 2 is a schematic cross-sectional view for explaining one configuration example of a vertical cavity type semiconductor laser device according to the present invention (a structure in which photodetectors are laminated and integrated on the upper part of the vertical cavity).

FIG. 3 is a view for explaining the steps of ion implantation and regrowth in a vertical cavity type semiconductor laser device according to the present invention, in which (a), (b), (c), and (d) respectively. It is a typical sectional view for explaining a process.

FIG. 4 is a view for explaining the steps of ion implantation and regrowth by a focused ion beam in a vertical cavity type semiconductor laser device according to the present invention, (a), (b),
(C) and (d) are schematic cross-sectional views for explaining each step.

FIG. 5 is a graph showing SIMS analysis results of a proton-implanted wafer in a vertical cavity type semiconductor laser device according to the present invention, which is (a) before annealing and (b) after annealing.

FIG. 6 is a graph showing SIMS analysis results of an oxygen ion-implanted wafer in a vertical cavity type semiconductor laser device according to the present invention, which is (a) before annealing and (b) after annealing.

FIG. 7 is a graph showing current-voltage characteristics of a vertical cavity type semiconductor laser device according to the present invention, in which (a) shows a surface emitting laser device having a device structure in which a photodetector is laminated and integrated on an upper part of the vertical cavity. Current-optical output characteristics and current-voltage characteristics,
(B) shows the current-voltage characteristics of a photodetector having an element structure in which the photodetector is stacked and integrated on the vertical resonator.

FIG. 8 is a schematic cross-sectional view for explaining one configuration example of a vertical cavity type semiconductor laser device according to the present invention (a structure in which saturable absorption layers are laminated and integrated in upper and lower DBRs of a vertical cavity).

FIG. 9 is a sectional view of a conventional vertical cavity type semiconductor laser device.

FIG. 10 is a cross-sectional view of a conventional stacked integrated vertical cavity type semiconductor laser device.

[Explanation of symbols]

1 p-AlGaAs substrate _{2 p-Al y Ga 1-} y As / Al z Ga 1-z AsDB
R-shaped reflector 3 Al _u Ga _1-u As spacer layer _{4 GaAs / Al w Ga 1-} w As superlattice active layer 5 Al _u Ga _1-u As spacer layer _{6 n-Al y Ga 1-} y As / Al _z Ga _1-z AsDB
R-type reflector (first-time _{growth) 7 n-Al y Ga 1} -y As / Al z Ga 1-z AsDB
R-shaped mirror (second growth) 8 n-Al _u Ga _1-u As clad layer 9 Undoped-GaAs absorption layer 10 p-Al _u Ga _1-u As clad layer 11 p ⁺ -GaAs contact layer 12 p Electrode 13 n electrode 14 SiN _x or SiO ₂ 15 p electrode 16 active layer current confinement ion implantation region 17 for receiver ion-implanted region 18 p-AlGaAs substrate _{19 p-Al y Ga 1-} y As / Al z Ga 1-z AsD
BR type reflection mirror 20 Al _u Ga _1-u As spacer layer 21 GaAs / Al _w Ga _1-w As superlattice structure active layer 22 Al _u Ga _1-u As spacer layer 23 n electrode layer 24 Al _u Ga _1-u As spacer layer _{25 Al x 'Ga 1-x} ' As / Al w 'Ga 1-w' As superlattice structure saturable absorption region 26 Al _u Ga _1-u As spacer layer _{27 p-Al y Ga 1-} y As / Al _z Ga _1-z AsD
BR type reflector 28 p electrode 29 n electrode 30 p electrode 31 SiN _x or SiO ₂ 32 active layer for current confinement ion implantation region 33 saturable absorbing layer ion-implanted region 34 p-AlGaAs substrate 35 p-Al _y Ga _{1- y} As / Al _z Ga _1-z AsD
BR type reflector 36 Al _u Ga _1-u As spacer layer _{37 GaAs / Al w Ga 1-} w As superlattice active layer 38 Al _u Ga _1-u As spacer layer _{39 n-Al y Ga 1-} y As / Al _z Ga _1-z AsD
BR shaped reflector _{40 n-Al u Ga 1-} u As cladding layer 41 doped -GaAs absorbing layer 42 SiN _x or _{SiO 2 43 p-Al u Ga} 1-u As cladding layer 44 p ⁺ -GaAs contact layer 45 p electrode 46 p electrode 47 n electrode 48 active layer current confinement ion implantation region 49 for receiver ion implantation region 101 p-AlGaAs substrate _{102 p-Al y Ga 1-} y As / Al z Ga 1-z As
DBR type reflector 103 Al _u Ga _1-u As spacer layer _{104 GaAs / Al w Ga 1-} w As superlattice active layer 105 Al _u Ga _1-u As spacer layer _{106 n-Al y Ga 1-} y As / Al _z Ga _1-z As
DBR type reflector (first-time _{growth) 107 n-Al y Ga 1} -y As / Al z Ga 1-z As
DBR type reflector (second time of growth) 108 p electrode 109 n electrode 110 ion implantation region 111 p-AlGaAs substrate _{112 p-Al y Ga 1-} y As / Al z Ga 1-z As
DBR type reflector 113 Al _u Ga _1-u As spacer layer _{114 GaAs / Al w Ga 1-} w As superlattice active layer 115 Al _u Ga _1-u As spacer layer _{116 n-Al y Ga 1-} y As / Al _z Ga _1-z As
DBR type reflector (first-time _{growth) 117 n-Al y Ga 1} -y As / Al z Ga 1-z As
DBR type reflecting mirror (second growth) 118 p electrode 119 n electrode 120 ion implantation region 201 region where ions have passed 202 vertical cavity laser device 203 photodetector

Front page continued (72) Inventor Hidetoshi Iwamura 3-19-3 Nishishinjuku, Shinjuku-ku, Tokyo Nippon Telegraph and Telephone Corporation (72) Inventor Takashi Kurokawa 3-19-3 Nishishinjuku, Shinjuku-ku, Tokyo Nippon Telegraph and Telephone Phone Co., Ltd.

Claims (12)

[Claims] 1. An active layer, a pair of spacer layers sandwiching the active layer, a pair of semiconductor multilayer film reflectors sandwiching the pair of spacer layers, and at least a closed region on a plane formed by the active layer. A method of manufacturing a vertical cavity type semiconductor laser device in which a laminated structure having a region confining a current and a current confinement region having a high resistance is formed on a semiconductor substrate, the first laminated layer including the active layer. A first crystal growth step of forming a structure portion on the substrate; an ion implantation step of providing the current confinement region by ion implantation into the first laminated structure portion; and, after forming the current confinement region, A second crystal growth step of forming a second stacked structure portion on the first stacked structure portion, and the stacked structure body includes the first stacked structure portion and the second stacked structure portion. Vertical joints characterized by consisting of Method of manufacturing a vessel-type semiconductor laser device. 2. The first laminated structure portion has one of the pair of semiconductor multilayer film reflecting mirrors and one of the pair of spacer layers, while the second laminated structure portion. 3. The method for manufacturing a vertical cavity type semiconductor laser device according to claim 2, further comprising: the other of the pair of semiconductor multilayer film reflecting mirrors and the other of the pair of spacer layers. 3. The semiconductor substrate is made of GaAs, the first crystal growth step is to grow an InGaP layer on the first laminated structure portion, and the second crystal growth step is to be the second crystal growth step. Before forming the laminated layer structure part of
The GaP layer is removed, wherein the GaP layer is removed.
5. A method for manufacturing a vertical cavity type semiconductor laser device according to. 4. The semiconductor substrate is made of GaAs, and in the first crystal growth step, AlGaA that can be evaporated by heating in a growth apparatus at the end of the growth of the first laminated structure portion.
Before growing the s layer or the GaAs layer and further forming the second laminated structure portion in the second crystal growth step,
4. The vertical cavity type semiconductor laser device according to claim 1, wherein the vaporizable AlGaAs layer or GaAs layer is removed in an AsH ₃ atmosphere or during irradiation with an As beam. Method. 5. The method of manufacturing a vertical cavity type semiconductor laser device according to claim 1, wherein oxygen ions are used as the ion species for the ion implantation. 6. A focused ion beam is used as the means for implanting ions, and the first crystal growing step, the ion implanting step, and the second crystal growing step are performed consistently in a vacuum apparatus. The method for manufacturing a vertical cavity type semiconductor laser device according to claim 1, wherein the method is a semiconductor device. 7. The vertical cavity type semiconductor laser device according to claim 1, further comprising a step of laminating a functional element for optical signal processing on the laminated structure. Production method. 8. The vertical resonator type according to claim 1, wherein an optical functional region is built in the optical resonator formed by the pair of semiconductor multilayer film reflecting mirrors. Manufacturing method of semiconductor laser device. 9. An active layer, a pair of spacer layers sandwiching the active layer, a pair of semiconductor multilayer film reflecting mirrors sandwiching the pair of spacer layers, and at least a closed region on a plane formed by the active layer. In a vertical cavity type semiconductor laser device in which a laminated structure including a region confined to a current confinement region having a high resistance is formed on a semiconductor substrate, the laminated structure is formed by a first crystal growth. And a recrystallization on the first laminated structure portion after providing the current confinement region by implanting ions into the first laminated structure portion and including the active layer. A vertical cavity type semiconductor laser device having a second laminated structure portion formed by growth. 10. The first laminated structure portion has one of the pair of semiconductor multilayer film reflection mirrors and one of the pair of spacer layers, while the second laminated structure portion. The vertical cavity type semiconductor laser device according to claim 9, further comprising: the other of the pair of semiconductor multilayer film reflecting mirrors and the other of the pair of spacer layers. 11. The vertical cavity type semiconductor laser device according to claim 9, wherein a functional element for optical signal processing is laminated on the laminated structure. 12. The optical functional region is built in an optical resonator constituted by the pair of semiconductor multilayer film reflecting mirrors of the vertical resonator type semiconductor. A vertical cavity type semiconductor laser device according to claim 1.