WO2021142962A1 - Laser à émission de surface à cavité verticale à réseau de contraste élevé et procédé de fabrication associé - Google Patents

Laser à émission de surface à cavité verticale à réseau de contraste élevé et procédé de fabrication associé Download PDF

Info

Publication number
WO2021142962A1
WO2021142962A1 PCT/CN2020/085164 CN2020085164W WO2021142962A1 WO 2021142962 A1 WO2021142962 A1 WO 2021142962A1 CN 2020085164 W CN2020085164 W CN 2020085164W WO 2021142962 A1 WO2021142962 A1 WO 2021142962A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
grating
region
oxide
reflector
Prior art date
Application number
PCT/CN2020/085164
Other languages
English (en)
Chinese (zh)
Inventor
沈志强
Original Assignee
浙江博升光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 浙江博升光电科技有限公司 filed Critical 浙江博升光电科技有限公司
Publication of WO2021142962A1 publication Critical patent/WO2021142962A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers

Definitions

  • the present invention generally relates to the technical field of lasers, in particular to a high-contrast grating vertical cavity surface emitting laser and a manufacturing method.
  • a high-contrast grating (High Contrast Grating; HCG) can be used instead of a Bragg reflector (Distributed Bragg Reflector; DBR).
  • the HCG includes a spacer layer, a groove is formed on the spacer layer, and a grating is suspended above the groove. Since the grating is suspended above the groove, it is susceptible to mechanical damage.
  • a 2-dimensional (Dimensions; D) grating is used, it can only adopt a gridded shape.
  • the present application intends to provide a high-contrast grating vertical cavity surface emitting laser and a manufacturing method to solve the problem that the 2D structure adopting the air-suspended grating in the prior art can only adopt a mesh structure, cannot form a columnar structure, and is easy to be damaged.
  • the present invention provides a high-contrast grating vertical cavity surface emitting laser, including:
  • the second reflector layer includes an oxide isolation layer and a grating layer, the oxide isolation layer is located between the grating layer and the active layer, at least a part of the grating layer is provided with a grating, and the grating
  • the gate trenches of the second oxide layer extend to the oxide isolation layer, the oxide isolation layer is provided with a first oxide region, the first oxide region supports the grating, and the refractive index of the first oxide region is smaller than that of the grating Refractive index.
  • the first reflector layer, the active layer, and the second reflector layer form a three-stage stepped structure
  • a current spreading layer is formed on the active layer, a first electrode is formed on the current spreading layer, and the first electrode is located at a step position.
  • the first reflector layer, the active layer, and the second reflector layer form a two-stage stepped structure, wherein the first reflector layer forms a first step, at least The active layer and the second reflector layer form a second step;
  • a first electrode is provided on the grating layer in an area outside the grating.
  • an oxide layer is formed on at least one side of the active layer, the oxide layer includes a second oxidized region and an unoxidized region, the second oxidized region surrounds the unoxidized region, and the unoxidized region The oxidized area is used to define the laser exit window.
  • the first reflector layer, the active layer, and the second reflector layer form a platform structure
  • the active layer includes a proton or ion implantation region and a first non-implantation region, the proton or ion implantation region surrounds the first non-implantation region, and the first non-implantation region is used to define a laser exit window.
  • the laser exit window is less than or equal to the first oxide region
  • the active layer further includes a second unimplanted region, and the second unimplanted region is located between the oxide isolation layer and the Proton or ion implantation between regions.
  • the thickness of the oxide isolation layer is less than ⁇ /6, where ⁇ is the wavelength of the laser light emitted by the high-contrast grating vertical cavity surface emitting laser.
  • the present invention provides a method for manufacturing the above-mentioned high-contrast grating vertical cavity surface emitting laser, including:
  • the method for forming the second reflector layer includes:
  • a wet oxidation process is performed on the oxide isolation layer through the gate groove to form a first oxidation region facing the grating, and the refractive index of the first oxidation region is smaller than the refractive index of the grating.
  • an electrode contact layer is formed on the side of the first reflector layer facing the active layer
  • An electrode is formed on the electrode contact layer and the current spreading layer.
  • an electrode contact layer is formed on the side of the first reflector layer facing the active layer
  • An electrode is formed on the electrode contact layer and the grating layer.
  • a proton or ion implantation region and a first non-implanted region are formed in the active layer through a proton or ion implantation process, and the proton or ion implantation region surrounds the first non-implanted region, and The first uninjected area is used to define the laser exit window.
  • the first oxidized region supports the grating instead of floating on the groove as the grating in the prior art, so the grating is not easily damaged, which greatly improves the reliability of the high-contrast grating vertical cavity surface emitting laser
  • the grating can adopt a structure such as a stripe, a mesh, or a column.
  • the refractive index of the first oxidized region is smaller than that of the grating, forming a high-contrast grating.
  • FIG. 1 is a schematic diagram of a vertical high-contrast grating vertical cavity surface emitting laser provided by an embodiment of the present invention
  • 2-7 are schematic diagrams of the manufacturing process of one of the vertical high-contrast grating vertical cavity surface emitting lasers provided by the embodiments of the invention.
  • Fig. 8 is a schematic diagram of one structure of a vertical high contrast grating vertical cavity surface emitting laser provided by an embodiment of the invention.
  • 9-13 are schematic diagrams of the manufacturing process of another vertical high-contrast grating vertical cavity surface emitting laser according to an embodiment of the invention.
  • Fig. 14 is another structural schematic diagram of a vertical high-contrast grating vertical cavity surface emitting laser provided by an embodiment of the invention.
  • an embodiment of the present invention provides a vertical high-contrast grating vertical cavity surface emitting laser, including:
  • the first reflector layer 1, the active layer 8 and the second reflector layer 3 are stacked; the second reflector layer 3 includes an oxide isolation layer 31 and a grating layer 32.
  • the oxide isolation layer 31 is located on the grating layer 32 and there are Between the source layers 8, at least a part of the grating layer 32 is provided with a grating 4, and the grating groove 5 of the grating 4 extends to the oxide isolation layer 31.
  • the oxide isolation layer 31 is provided with a first oxidized region 6, and the first oxidized region 6 supports For the grating, the refractive index of the first oxidized region 6 is smaller than the refractive index of the grating.
  • the material of the oxide isolation layer 31 is, for example, but not limited to, AlGaAs. Specifically, the ratio may be Al x Ga 1-x As (0.8 ⁇ x ⁇ 1).
  • the grating is, for example, but not limited to, a sub-wavelength grating.
  • the first oxidized region 6 supports the grating instead of suspending the grating on the groove as in the prior art, so the grating is not easily damaged, which greatly improves the reliability of the high-contrast grating vertical cavity surface emitting laser.
  • the grating can adopt a structure such as a stripe, a mesh, or a column.
  • more complex optical structures can be integrated into the grating, such as but not limited to lenses or phase plates used to generate orbital angular momentum beams.
  • the refractive index of the first oxidized region 6 is smaller than the refractive index of the grating, forming a high-contrast grating.
  • the vertical high contrast grating vertical cavity surface emitting laser can also include an oxide layer 2, a current spreading layer 9 and other functions according to actual needs.
  • sexual layer the following will describe one by one.
  • the first reflector layer 1, the active layer 8 and the second reflector layer 3 form a three-stage stepped structure; the first reflector layer 1 forms a first
  • the active layer 8 forms the second step, and the second reflector layer 3 forms the third step.
  • the dimensions of the first reflector layer 1, the active layer 8 and the second reflector layer 3 are reduced in order. Small.
  • the sizes of the first reflector layer 1, the active layer 8 and the second reflector layer 3 may also be increased sequentially.
  • a current spreading layer 9 is formed on the active layer 8, a first electrode 13 is formed on the current spreading layer 9, and the first electrode 13 is located at a step position.
  • the first electrode 13 may be formed on the current spreading layer 9 by a deposition method, for example, chemical vapor deposition, electroplating, sputtering, evaporation, or the like.
  • the material of the current spreading layer 9 is, for example, but not limited to, GaAs.
  • an oxide layer 2 is formed on at least one side of the active layer 8.
  • the oxide layer 2 includes a second oxidized region 12 and an unoxidized region 11
  • the second oxidized region 12 surrounds the non-oxidized region 11, and the non-oxidized region 11 is used to define the laser exit window.
  • the oxide layer 2 is provided to make the current flowing through each light emitting region uniform, so the brightness uniformity of the light emitting region is high, and the vertical cavity surface emitting laser is improved Quality.
  • the second oxidation region 12 can be formed in the same oxidation process as the first oxidation region 6, of course, it can also be formed in two oxidation processes separately.
  • a substrate is provided; the substrate can be a GaAs substrate.
  • a first reflector layer 1 is formed on the substrate; the first reflector layer 1 may be DBR.
  • the first reflector layer 1 may include two layers of materials with different refractive indices, AlGaAs and GaAs; the substrate and the first reflector layer 1 may be both N-type or P-type. The N-type is used in this embodiment.
  • An N-type electrode contact layer 7 is formed on the first reflector layer 1.
  • An active layer 8 is formed on the N-type electrode contact layer 7, and an oxide layer 2 is formed on the active layer 8.
  • the oxide layer 2 can also be formed on the N-type electrode contact layer 7 and the active layer 8 can be formed on the oxide layer 2. It is also possible to form an oxide layer 2 on the N-type electrode contact layer 7, form an active layer 8 on the oxide layer 2, and form an oxide layer 2 on the active layer 8.
  • the active layer 8 includes at least a stacked multi-quantum well layer.
  • the multi-quantum well layer is composed of GaAs, AlGaAs, GaAsP and InGaAs materials stacked and arranged, and the active layer 8 is used to convert electrical energy into light energy.
  • a single quantum well layer can also be used instead of a multiple quantum well layer.
  • the current spreading layer 9 is formed on the active layer 8 or the oxide layer 2, and the second reflector layer 3 is formed on the current spreading layer 9;
  • the isolation layer 31 is formed, and then a grating layer 32 is formed on the oxide isolation layer 31.
  • the material of the oxide isolation layer 31 may be Al x Ga 1-x As (x>0.9), and the material of the grating layer 32 may be Al y Ga 1-y As (y ⁇ 0.4).
  • a part of the grating layer 32 is etched to form a gate trench 5 by etching, and the gate trench 5 extends to the oxide isolation layer 31.
  • the above-mentioned gate trench 5 can be etched by laser etching or chemical etching.
  • the grating layer 32 and the oxide isolation layer 31 outside the grating region are etched away, and the current spreading layer 9 is exposed.
  • the oxidation trench 10 is etched, and the oxidation trench 10 extends to the N-type electrode contact layer 7;
  • the first oxidized region 6 is formed at the position of the oxide isolation layer 31 corresponding to the grating by a wet oxidation process. As an implementation manner, the first oxidized region 6 is the part remaining after the oxide isolation layer 31 is etched.
  • the second oxidized region 12 surrounding the unoxidized region 11 is formed inwardly from the oxidized trench 10 formed in the layer 2.
  • the wet oxidation process for example, at a temperature of 430°C, 2L/min of nitrogen carries a certain temperature of water vapor for selective wet oxidation.
  • the oxidation depth that is, the extension depth in the left and right directions in the figure, is controlled by time, so that the oxide layer 2 A second oxidized region 12 is formed, the second oxidized region 12 surrounds the unoxidized region 11 in the oxide layer 2, and the first oxidized region 6 is formed at a position of the oxide isolation layer 31 corresponding to the grating.
  • Electrodes are formed on the current spreading layer 9 and the N-type electrode contact layer 7 by chemical vapor deposition, electroplating, sputtering, evaporation, etc., wherein the electrode on the current spreading layer 9 is the first electrode 13, and the N-type electrode contact layer The electrode on 7 is the second electrode 14.
  • the second electrode 14 can also be formed on the side of the first reflector layer 1 away from the active layer 8.
  • the second electrode 14 can be a planar electrode, which can be The surface of the first reflector layer away from the active layer 8 is completely covered to provide a large enough electrode to reduce resistance.
  • the first reflector layer 1, the active layer 8 and the second reflector layer 3 form a two-stage stepped structure, wherein the first reflector layer 1 forms the first
  • the active layer 8 and the second reflector layer 3 form a second step; it can be understood that the size of the first reflector layer 1 is larger than the size of the active layer 8 and the second reflector layer 3, and, The active layer 8 and the second reflector layer 3 have the same size.
  • the size of the first reflector layer 1 is smaller than the sizes of the active layer 8 and the second reflector layer 3, and the sizes of the active layer 8 and the second reflector layer 3 are the same.
  • a current spreading layer 9 is formed between the active layer 8 and the second emitter layer.
  • the material of the current spreading layer 9 is, for example, but not limited to, GaAs. .
  • the grating layer 32 is provided with a first electrode 13 in an area outside the grating.
  • the first electrode 13 can be formed on the grating layer 32 by a deposition method, for example, chemical vapor deposition, electroplating, sputtering, evaporation, or the like.
  • an oxide layer 2 is formed on at least one side of the active layer 8.
  • the oxide layer 2 includes a second oxidized region 12 and an unoxidized region 11
  • the second oxidized region 12 surrounds the non-oxidized region 11, and the non-oxidized region 11 is used to define the laser exit window.
  • the oxide layer 2 is provided to make the current flowing through each light emitting region uniform, so the brightness uniformity of the light emitting region is high, and the vertical cavity surface emitting laser is improved Quality.
  • the second oxidation region 12 can be formed in the same oxidation process as the first oxidation region 6, of course, it can also be formed in two oxidation processes separately.
  • a substrate is provided; the substrate can be a GaAs substrate.
  • a first reflector layer 1 is formed on the substrate; the first reflector layer 1 may be DBR.
  • the first reflector layer 1 may include two layers of materials with different refractive indices, AlGaAs and GaAs; the substrate and the first reflector layer 1 may be both N-type or P-type. The N-type is used in this embodiment.
  • An N-type electrode contact layer 7 is formed on the first reflector layer 1.
  • An active layer 8 is formed on the N-type electrode contact layer 7, and an oxide layer 2 is formed on the active layer 8.
  • the oxide layer 2 can also be formed on the N-type electrode contact layer 7 and the active layer 8 can be formed on the oxide layer 2. It is also possible to form an oxide layer 2 on the N-type electrode contact layer 7, form an active layer 8 on the oxide layer 2, and form an oxide layer 2 on the active layer 8.
  • the active layer 8 includes at least a stacked multi-quantum well layer.
  • the multi-quantum well layer is composed of GaAs, AlGaAs, GaAsP and InGaAs materials stacked and arranged, and the active layer 8 is used to convert electrical energy into light energy.
  • a single quantum well layer can also be used instead of a multiple quantum well layer.
  • the current spreading layer 9 is formed on the active layer 8 or the oxide layer 2, and the second reflector layer 3 is formed on the current spreading layer 9;
  • the isolation layer 31 is formed, and then a grating layer 32 is formed on the oxide isolation layer 31.
  • the material of the oxide isolation layer 31 may be Al x Ga 1-x As (x>0.9), and the material of the grating layer 32 may be Al y Ga 1-y As (y ⁇ 0.4).
  • a part of the grating layer 32 is etched to form a gate trench 5 by etching, and the gate trench 5 extends to the oxide isolation layer 31.
  • the above-mentioned gate trench 5 can be etched by laser etching or chemical etching.
  • the oxidation trench 10 is etched, and the oxidation trench 10 extends to the N-type electrode contact layer 7;
  • a first oxidation region 6 is formed at the position of the oxide isolation layer 31 corresponding to the grating by a wet oxidation process, and a self-oxidation trench 10 is formed in the oxidation layer 2 to form a second oxidation region 12 surrounding the unoxidized region 11 inward;
  • Electrodes are formed on the grating layer 32 and the N-type electrode contact layer 7 by chemical vapor deposition, electroplating, sputtering, evaporation, etc., wherein the electrode on the grating layer 32 is the first electrode 13, and the N-type electrode contact layer 7 The electrode is the second electrode 14.
  • the second electrode 14 can also be formed on the side of the first reflector layer 1 away from the active layer 8.
  • the second electrode 14 can be a planar electrode, which can be The surface of the first reflector layer away from the active layer 8 is completely covered to provide a large enough electrode to reduce resistance.
  • the first reflector layer 1, the active layer 8 and the second reflector layer 3 form a platform structure. It can be understood that the three of them can be of equal size.
  • the active layer 8 includes a proton or ion implantation region 17 and a first non-implanted region 18, the proton or ion implantation region 17 surrounds the first non-implanted region 18, the first non-implanted region 18 is used to define the laser emission window.
  • the oxide layer 2 is not required, and the etching of the oxide trench 10 is not required, which simplifies the manufacturing process and reduces the complexity of processing.
  • a substrate is provided; the substrate can be a GaAs substrate.
  • a first reflector layer 1 is formed on the substrate; the first reflector layer 1 may be DBR.
  • the first reflector layer 1 may include two layers of materials with different refractive indices, AlGaAs and GaAs; the substrate and the first reflector layer 1 may be both N-type or P-type. The N-type is used in this embodiment.
  • An N-type electrode contact layer 7 is formed on the first reflector layer 1.
  • An active layer 8 is formed on the N-type electrode contact layer 7.
  • the active layer 8 includes at least a stacked multi-quantum well layer composed of GaAs, AlGaAs, GaAsP and InGaAs materials stacked and arranged, and the active layer 8 is used to convert electrical energy into light energy.
  • a single quantum well layer can also be used instead of a multiple quantum well layer.
  • a current spreading layer 9 is formed on the active layer 8, and a second reflector layer 3 is formed on the current spreading layer 9; the second reflector layer 3 is formed by first forming an oxide isolation layer 31 on the current spreading layer 9 and then A grating layer 32 is formed on the oxide isolation layer 31.
  • the material of the oxide isolation layer 31 may be Al x Ga 1-x As (x>0.9), and the material of the grating layer 32 may be Al y Ga 1-y As (y ⁇ 0.4).
  • a part of the grating layer 32 is etched to form a gate trench 5 by etching, and the gate trench 5 extends to the oxide isolation layer 31.
  • the above-mentioned gate trench 5 can be etched by laser etching or chemical etching.
  • a photoresist 15 and other proton or ion implantation process protection structure is provided on the grating layer 32, and the proton or ion implantation process is used to form the proton or ion implantation region 17 and the first non-implantation region 18 in the active layer 8.
  • Proton or ion implantation The area 17 surrounds the first non-injected area 18, and the first non-injected area 18 is used to define the laser exit window.
  • the first non-implanted region 18 is a region covered by the protective structure of the proton or ion implantation process.
  • the main function of the area covered by the protective structure of the proton or ion implantation process is to protect the underlying layers during proton or ion isolation implantation, and prevent the underlying layers from being insulated during the proton or ion isolation implantation.
  • the protective structure of the proton or ion implantation process is removed.
  • a first electrode 13 is formed on the grating layer 32 by chemical vapor deposition, electroplating, sputtering, evaporation, etc., and a second electrode 14 is formed on the side of the first reflector layer 1 facing away from the active layer 8.
  • 14 can be a planar electrode, which can completely cover the surface of the first reflector layer 1 away from the active layer 8 to provide a sufficiently large electrode and reduce resistance.
  • the active layer 8 also includes a second non-implanted region 16, which is located in the oxide isolation layer 31 and proton or ion implantation. Between area 17.
  • the second uninjected region 16 may serve as a current spreading layer.
  • annealing is performed after the proton or ion implantation, so that the layers on the proton or ion implantation path and above the proton or ion implantation region 17 restore better conductivity.
  • the thickness of the oxide isolation layer 31 is less than ⁇ /6, so as to reduce the amount of material used and the difficulty of manufacturing.
  • ⁇ is the wavelength of the laser light emitted by the high-contrast grating vertical cavity surface emitting laser.
  • the embodiment of the present invention also provides a method for manufacturing the above-mentioned high-contrast grating vertical cavity surface emitting laser, which includes:
  • the first reflector layer 1, the active layer 8 and the second reflector layer 3 are formed in sequence;
  • the method for forming the second reflector layer 3 includes:
  • An oxide isolation layer 31 and a grating layer 32 are sequentially formed, and the oxide isolation layer 31 is located between the grating layer 32 and the active layer 8;
  • the oxide isolation layer 31 is subjected to a wet oxidation process through the gate groove 5 to form a first oxide region 6 facing the grating.
  • the refractive index of the first oxide region 6 is smaller than that of the grating. Rate.
  • This method is a manufacturing method corresponding to the above-mentioned high-contrast grating vertical cavity surface emitting laser.
  • This method is a manufacturing method corresponding to the above-mentioned high-contrast grating vertical cavity surface emitting laser.
  • an electrode contact layer is formed on the side of the first reflector layer 1 facing the active layer 8;
  • the oxide layer 2 forms the second oxidation region 12 surrounding the unoxidized region 11 from the oxidation trench 10 inward;
  • Electrodes are formed on the electrode contact layer and the current spreading layer 9.
  • an electrode contact layer is formed on the side of the first reflector layer 1 facing the active layer 8;
  • the oxide layer 2 forms the second oxide region 12 surrounding the unoxidized region 11 from the oxide trench 10 inward;
  • Electrodes are formed on the electrode contact layer and the grating layer 32.
  • a proton or ion implantation region 17 and a first non-implanted region 18 are formed in the active layer 8 through a proton or ion implantation process, and the proton or ion implantation region 17 surrounds the first non-implanted region 18, The first non-injected region 18 is used to define a laser exit window.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, “multiple” means two or more.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser à émission de surface à cavité verticale à réseau de contraste élevé et un procédé de fabrication associé. Le laser à émission de surface à cavité verticale à réseau de contraste élevé comprend : une première couche de réflecteur, une couche active et une seconde couche de réflecteur qui sont empilées. La seconde couche de réflecteur comprend une couche d'isolation d'oxyde et une couche de réseau ; la couche d'isolation d'oxyde est située entre la couche de réseau et la couche active ; au moins une partie de la couche de réseau est pourvue d'un réseau ; des rainures de réseau du réseau s'étendent jusqu'à la couche d'isolation d'oxyde ; la couche d'isolation d'oxyde est pourvue d'une première région d'oxydation ; et la première région d'oxydation supporte le réseau, et a un indice de réfraction inférieur à l'indice de réfraction du réseau. Selon la solution, la première région d'oxydation supporte le réseau, tandis que, dans l'état de la technique, le réseau flotte sur les rainures et, par conséquent, le réseau n'est pas facilement endommagé ; en outre, en raison de l'effet de support de la première région d'oxydation, le réseau peut utiliser une bande, un maillage, une colonne et d'autres structures.
PCT/CN2020/085164 2020-01-16 2020-04-16 Laser à émission de surface à cavité verticale à réseau de contraste élevé et procédé de fabrication associé WO2021142962A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010047048.3 2020-01-16
CN202010047048.3A CN111211488A (zh) 2020-01-16 2020-01-16 高对比度光栅垂直腔面发射激光器及制造方法

Publications (1)

Publication Number Publication Date
WO2021142962A1 true WO2021142962A1 (fr) 2021-07-22

Family

ID=70787622

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/085164 WO2021142962A1 (fr) 2020-01-16 2020-04-16 Laser à émission de surface à cavité verticale à réseau de contraste élevé et procédé de fabrication associé

Country Status (2)

Country Link
CN (1) CN111211488A (fr)
WO (1) WO2021142962A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111799654B (zh) * 2020-09-09 2021-01-22 常州纵慧芯光半导体科技有限公司 一种激光器及其制造方法与应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977786A (zh) * 2016-06-29 2016-09-28 北京工业大学 低折射率介质支撑型高对比度光栅面发射激光器
CN110011181A (zh) * 2019-05-24 2019-07-12 苏州长瑞光电有限公司 晶体管垂直腔面发射激光器及其制备方法
WO2019217794A1 (fr) * 2018-05-11 2019-11-14 The Regents Of The University Of California Lasers vcsel hcg à espacement d'oxyde et procédés de fabrication
CN110658576A (zh) * 2019-10-12 2020-01-07 长春理工大学 一种亚波长光栅及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2546153B2 (ja) * 1993-07-08 1996-10-23 日本電気株式会社 面発光素子およびその製造方法
CN1200498C (zh) * 2002-12-06 2005-05-04 吉林大学 倾斜离子注入型垂直腔面发射激光器及其制作方法
WO2012149497A2 (fr) * 2011-04-29 2012-11-01 The Regents Of The University Of California Lasers à cavité verticale émettant par la surface (vcsel), à réseau à haut contraste (hcg) à silicium sur isolant
CN102868091A (zh) * 2012-09-13 2013-01-09 北京工业大学 应用石墨烯表面电流扩展层的大功率面发射激光器
KR20180015630A (ko) * 2015-06-09 2018-02-13 코닌클리케 필립스 엔.브이. 수직 공동 표면 방사 레이저
CN105914580B (zh) * 2016-07-07 2019-01-29 北京工业大学 具有侧向光栅和纵向布喇格反射镜结构的半导体激光器
CN106654856B (zh) * 2017-02-28 2020-06-30 武汉光迅科技股份有限公司 一种垂直腔面激光器及其制作方法
CN108110614A (zh) * 2017-12-20 2018-06-01 中国工程物理研究院电子工程研究所 内嵌布拉格光栅的GaN基DFB激光器及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977786A (zh) * 2016-06-29 2016-09-28 北京工业大学 低折射率介质支撑型高对比度光栅面发射激光器
WO2019217794A1 (fr) * 2018-05-11 2019-11-14 The Regents Of The University Of California Lasers vcsel hcg à espacement d'oxyde et procédés de fabrication
CN110011181A (zh) * 2019-05-24 2019-07-12 苏州长瑞光电有限公司 晶体管垂直腔面发射激光器及其制备方法
CN110658576A (zh) * 2019-10-12 2020-01-07 长春理工大学 一种亚波长光栅及其制备方法

Also Published As

Publication number Publication date
CN111211488A (zh) 2020-05-29

Similar Documents

Publication Publication Date Title
KR100708107B1 (ko) 전기 광학적 특성이 개선된 반도체 광 방출 장치 및 그제조방법
JP3783411B2 (ja) 表面発光型半導体レーザ
KR100487224B1 (ko) 수직공동 표면방사 레이저 및 그 제조방법
US8073032B2 (en) Surface emitting laser and manufacturing method therefor
JPH11103129A (ja) 垂直空洞面発光レーザ及びその製造方法
JPH10229248A (ja) 表面発光レーザ及びその製造方法
JP2001237497A (ja) 受動半導体構造およびその製造方法
US6608849B2 (en) Vertical-cavity surface-emitting semiconductor laser arrays
US8218596B2 (en) Vertical cavity surface emitting laser and method of manufacturing the same
JP3188658B2 (ja) 面発光半導体レーザおよびその製造方法
JP3219823B2 (ja) 半導体発光素子
JP2001085788A (ja) 面発光型半導体レーザ素子及び面発光型半導体レーザアレイ
JP3800856B2 (ja) 面発光レーザ及び面発光レーザアレイ
JPH11307882A (ja) 面発光型半導体レ―ザ、面発光型半導体レ―ザアレイ、及び面発光型半導体レ―ザの製造方法
JP2008283129A (ja) 面発光半導体レーザアレイ
JP2009259857A (ja) 面発光レーザ素子および面発光レーザ素子アレイ
WO2021142962A1 (fr) Laser à émission de surface à cavité verticale à réseau de contraste élevé et procédé de fabrication associé
JP5006242B2 (ja) 面発光半導体レーザ素子
JPWO2005074080A1 (ja) 面発光レーザ及びその製造方法
JPH08181384A (ja) 面発光レーザ及びその作製方法
JP3262310B2 (ja) 垂直共振器型半導体レーザ素子およびその製造方法
JP2004128524A (ja) 面発光型半導体レーザ装置の製造方法
JP3546628B2 (ja) 面発光型半導体レーザ装置
JP5261201B2 (ja) 面発光レーザ、面発光レーザアレイ及びその製造方法
JPH09205250A (ja) 横方向電流注入型面発光半導体レーザ装置およびその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20914485

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20914485

Country of ref document: EP

Kind code of ref document: A1