CN209860347U - VCSEL laser - Google Patents
VCSEL laser Download PDFInfo
- Publication number
- CN209860347U CN209860347U CN201921119037.0U CN201921119037U CN209860347U CN 209860347 U CN209860347 U CN 209860347U CN 201921119037 U CN201921119037 U CN 201921119037U CN 209860347 U CN209860347 U CN 209860347U
- Authority
- CN
- China
- Prior art keywords
- layer
- conductive
- ohmic contact
- dbr
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 239000010410 layer Substances 0.000 claims description 321
- 239000011241 protective layer Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model provides a VCSEL laser, through setting up insulating medium layer, first oxide layer and second oxide layer are restricted the electric current, transparent conducting layer and first ohmic contact layer that are encircleed by insulating medium layer constitute first electrically conductive passageway, first oxide layer has the electrically conductive passageway of second, the second oxide layer has the electrically conductive passageway of third, and go out the unthreaded hole, the electrically conductive passageway of third, the electrically conductive passageway of second and first electrically conductive passageway reduce in proper order at the size of horizontal direction, thereby can be effectively with the electric current direction by first electrically conductive passageway, the region that electrically conductive passageway of second and third were injectd, improve laser efficiency.
Description
Technical Field
The utility model relates to a VCSEL technical field especially relates to a VCSEL laser.
Background
In recent years, with the rapid development of network technology, network users have risen sharply, network congestion has become serious, and the requirements on the transmission capacity and transmission speed of the network have become higher, wherein vertical cavity surface emitting lasers (also called VCSEL lasers) are particularly attractive. The optical fiber not only provides more free wavelengths, greatly reduces the operation cost and the backup cost of a system, greatly improves the capacity and the transmission capacity of the system, but also can adjust the wavelengths in real time, and is a key device of a future all-optical network.
The existing vertical cavity surface emitting laser generally adopts an oxide layer to limit current and realize current guiding, but the current is still easy to diffuse around, and the laser has low lasing efficiency.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model aims at: provided is a VCSEL laser having high lasing efficiency.
In order to achieve the above object, the utility model adopts the following technical scheme:
a VCSEL laser comprising: a first electrode, a conductive substrate, a bonding layer, a transparent conductive layer, a first ohmic contact layer, a first DBR layer, a first oxide layer, an active layer, a second oxide layer, a second ohmic contact layer, and a second DBR layer, which are sequentially stacked in a vertical direction, wherein the transparent conductive layer is located at a central region of the conductive substrate, the first ohmic contact layer is located at a central region of the first DBR layer, the second DBR layer is located at a central region of the second ohmic contact layer,
the transparent conductive layer is arranged between the conductive substrate and the first DBR layer and surrounds the transparent conductive layer and the first ohmic contact layer, the annular second electrode is arranged on one side of the second ohmic contact layer, on which the second DBR layer is arranged, and surrounds the second DBR layer,
the transparent conducting layer and the first ohmic contact layer form a first conducting channel, the first oxidation layer is provided with a second conducting channel, the second oxidation layer is provided with a third conducting channel, the hollow part of the annular second electrode forms a light-emitting hole, and the size of the light-emitting hole, the size of the third conducting channel, the size of the second conducting channel and the size of the first conducting channel in the horizontal direction are sequentially reduced.
Furthermore, the center of the light-emitting hole, the center of the third conductive channel, the center of the second conductive channel and the center of the first conductive channel are located on the same straight line.
Furthermore, the sizes of the light emitting hole, the third conductive channel, the second conductive channel and the first conductive channel in the horizontal direction are linearly and sequentially reduced.
Furthermore, the sizes of the light-emitting hole, the third conductive channel, the second conductive channel and the first conductive channel in the horizontal direction are reduced in a nonlinear manner in sequence.
Further, the sum of the thicknesses of the transparent conducting layer and the first ohmic contact layer is the same as the thickness of the insulating medium layer.
Further, still include the protective layer, the protective layer is located the second DBR deviates from one side of second ohmic contact layer, annular second electrode encircles the protective layer sets up, the second DBR layer with the thickness sum of protective layer is less than the thickness of annular second electrode.
The metal reflector is respectively arranged between the bonding layer and the transparent conducting layer and between the bonding layer and the insulating medium layer, and the transparent conducting layer is positioned in the central area of the metal reflector.
Furthermore, the organic light-emitting diode further comprises a first limiting layer and a second limiting layer, wherein the first limiting layer is arranged between the first oxidation layer and the active layer, and the second limiting layer is arranged between the second oxidation layer and the active layer.
From the above description it follows that: the utility model discloses a VCSEL laser, through setting up insulating medium layer, first oxide layer and second oxide layer are restricted the electric current, transparent conducting layer and the first ohmic contact layer that is encircleed by insulating medium layer constitute first conductive channel, first oxide layer has the electrically conductive passageway of second, the second oxide layer has the electrically conductive passageway of third, and the unthreaded hole, the electrically conductive passageway of third, the electrically conductive passageway of second and first conductive channel reduce in proper order at the size of horizontal direction, thereby can be effectively with the electric current direction by first conductive channel, the region that electrically conductive passageway of second and third were injectd, improve laser efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a first schematic structural diagram of a VCSEL laser according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram ii of a VCSEL laser according to an embodiment of the present invention;
fig. 3 to 12 are schematic structural diagrams corresponding to steps of a manufacturing method of a VCSEL laser according to a second embodiment of the present invention;
1. a first electrode; 2. a conductive substrate; 3. a bonding layer; 4. a transparent conductive layer; 5. a first ohmic contact layer; 6. a first DBR layer; 7. a first oxide layer; 8. an active layer; 9. a second oxide layer; 10. a second ohmic contact layer; 11. a second DBR layer; 12. an insulating dielectric layer; 13. an annular second electrode; 14. a protective layer; 15. a metal mirror; 16. a first confinement layer; 17. a second confinement layer; 18. a substrate; 19. a buffer layer; 20. etching the cut-off layer; a. a first conductive path; b. a second conductive path; c. a third conductive path; d. and a light outlet.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1 and 2, the present invention provides a VCSEL laser, including: a first electrode 1, a conductive substrate 2, a bonding layer 3, a transparent conductive layer 4, a first ohmic contact layer 5, a first DBR layer 6, a first oxide layer 7, an active layer 8, a second oxide layer 9, a second ohmic contact layer 10, and a second DBR layer 11, which are sequentially stacked in a vertical direction, the transparent conductive layer 4 being located at a central region of the conductive substrate 2, the first ohmic contact layer 5 being located at a central region of the first DBR layer 6, the second DBR layer 11 being located at a central region of the second ohmic contact layer 10,
the transparent conductive film further comprises an insulating medium layer 12 and an annular second electrode 13, wherein the insulating medium layer 12 is arranged between the conductive substrate 2 and the first DBR layer 6 and surrounds the transparent conductive layer 4 and the first ohmic contact layer 5, the annular second electrode 13 is arranged on one side of the second ohmic contact layer 10, which is provided with the second DBR layer 11, and surrounds the second DBR layer 11,
the transparent conductive layer 4 and the first ohmic contact layer 5 form a first conductive channel a, the first oxide layer 7 has a second conductive channel b, the second oxide layer 9 has a third conductive channel c, the hollow part of the annular second electrode 13 forms a light-emitting hole d, and the sizes of the light-emitting hole d, the third conductive channel c, the second conductive channel b and the first conductive channel a in the horizontal direction are sequentially reduced.
It should be noted that the first oxidation layer and the second oxidation layer 9 form a limiting structure and a conductive channel due to oxidation, so as to limit current. The utility model discloses a setting that unthreaded hole, third electrically conductive passageway, second electrically conductive passageway and first electrically conductive passageway reduced in proper order at the size of horizontal direction is with a limited region of electric current direction, prevents the electric current diffusion, has improved photon energy, and the unthreaded hole cooperation should be injectd the region, effectively reduces the output loss of light, improves the lasing efficiency.
In a preferred arrangement, the first electrode 1 is a P-type electrode, the first ohmic contact layer 5 is a P-type ohmic contact layer, the first DBR layer 6 is a P-type DBR layer, the annular second electrode 13 is an annular N-type electrode, the second ohmic contact layer 10 is an N-type ohmic contact layer, and the second DBR layer 11 is an N-type DBR layer. Of course, the present invention is not limited to P, N polarity settings.
The transparent conducting layer 4 and the first ohmic contact layer 5 can be respectively cylindrical, and the sizes of the transparent conducting layer 4 and the first ohmic contact layer 5 in the horizontal direction are the same, so that on one hand, good current limitation can be realized, and on the other hand, the process difficulty can be reduced. Transparent conducting layer 4 and first ohmic contact layer 5 also can be gas shapes such as round platform form, trapezoidal body, the utility model discloses do not do the restriction to the shape and the size of transparent conducting layer 4 and first ohmic contact layer 5.
The light emitting hole d, the third conductive channel c, the second conductive channel b and the first conductive channel a are preferably circular holes.
Furthermore, the center of the light exit hole d, the center of the third conductive channel c, the center of the second conductive channel b and the center of the first conductive channel a are located on the same straight line.
Furthermore, the sizes of the light emitting hole d, the third conductive channel c, the second conductive channel b and the first conductive channel a in the horizontal direction are linearly and sequentially reduced.
Furthermore, the sizes of the light outlet hole d, the third conductive channel c, the second conductive channel b and the first conductive channel a in the horizontal direction are reduced in a nonlinear manner in sequence.
From the above, the utility model discloses a light-emitting hole d, third electrically conductive passageway c, second electrically conductive passageway b and first electrically conductive passageway a can be the linearity and reduce in proper order at the size of horizontal direction, also can be the nonlinearity and reduce in proper order. Preferably, the current limiting region is formed by matching the third conductive channel c, the second conductive channel b and the first conductive channel a, and the current limiting region is formed by matching the third conductive channel c, the second conductive channel b and the first conductive channel a (for example, when the third conductive channel c, the second conductive channel b and the first conductive channel a are respectively in a circular hole shape, a circular truncated cone-shaped current limiting region extending from the transparent conductive layer 4 to the annular second electrode 13 is formed), the current can be basically limited in the current limiting region, the sizes of the light outlet hole d, the third conductive channel c, the second conductive channel b and the first conductive channel a in the horizontal direction can be linearly and sequentially reduced, the light outlet direction is matched with the current limiting region, and the laser can be emitted from the light outlet hole d without shielding, so that the energy loss is maximally reduced, and the lasing efficiency is improved.
Further, the sum of the thicknesses of the transparent conductive layer 4 and the insulating medium layer 12 is the same as the thickness of the first ohmic contact layer 5.
Further, the device further comprises a metal reflector 15, wherein the metal reflector 15 is respectively arranged between the bonding layer 3 and the transparent conductive layer 4, and between the bonding layer 3 and the insulating medium layer 12.
As can be seen from the above, by providing the metal mirror 15, it is possible to reflect the light that is not reflected by the DBR layer, and to ensure that the light is emitted from the light exit hole d. The sum of the thicknesses of the transparent conducting layer 4 and the insulating medium layer 12 is the same as the thickness of the first ohmic contact layer 5, and the sides of the transparent conducting layer and the insulating medium layer 12 close to the metal reflector 15 are located on the same plane, that is, the metal reflector 15 is in a flat state, so that the reflecting effect of the metal reflector 15 is optimal.
Further, the structure further includes a protective layer 14, the protective layer 14 is disposed on a side of the second DBR, which is away from the second ohmic contact layer 10, the annular second electrode 13 is disposed around the protective layer 14, and a sum of thicknesses of the second DBR layer 11 and the protective layer 14 is smaller than a thickness of the annular second electrode 13.
Further, the organic light emitting diode further comprises a first limiting layer 16 and a second limiting layer 17, wherein the first limiting layer 16 is arranged between the first oxide layer 7 and the active layer 8, and the second limiting layer 17 is arranged between the second oxide layer 9 and the active layer 8.
The utility model also provides a preparation method of VCSEL laser for make above-mentioned VCSEL laser, include:
growing a buffer layer 19, an etch stop layer 20, a second DBR layer 11, a second ohmic contact layer 10, a second oxide layer 9, an active layer 8, a first oxide layer 7, a first DBR layer 6, and a first ohmic contact layer 5 in this order on a substrate 18;
a transparent conductive layer 4 is arranged on one side of the first ohmic contact layer 5, which is far away from the first DBR layer 6;
etching the peripheral portions of the transparent conductive layer 4 and the first ohmic contact layer 5 to expose the first DBR layer 6;
an insulating medium layer 12 surrounding the transparent conducting layer 4 and the first ohmic contact layer 5 is arranged on one side of the first DBR layer 6 close to the ohmic contact layer;
bonding conductive substrates 2 to the side of the insulating medium layer 12 far away from the first DBR layer 6 and the side of the transparent conductive layer 4 far away from the first DBR layer 6 through a bonding layer 3;
etching and removing the substrate 18, the buffer layer 19 and the etch stop layer 20 until the second DBR layer 11 is exposed;
arranging a first electrode 1 on one side of the conductive substrate 2 far away from the bonding layer 3;
etching the outer peripheral portion of the second DBR layer 11 to expose the second ohmic contact layer 10;
a ring-shaped second electrode 13 surrounding the second DBR layer 11 is disposed on a side of the second ohmic contact layer 10 adjacent to the second DBR layer 11;
the transparent conductive layer 4 and the first ohmic contact layer 5 form a first conductive channel a, the first oxide layer 7 has a second conductive channel b, the second oxide layer 9 has a third conductive channel c, the hollow part of the annular second electrode 13 forms a light-emitting hole d, and the sizes of the light-emitting hole d, the third conductive channel c, the second conductive channel b and the first conductive channel a in the horizontal direction are sequentially reduced.
Further, after the insulating medium layer 12 is disposed and before the bonding layer 3 is disposed, the method further includes: a metal reflector 15 is arranged on one side of the insulating medium layer 12 far away from the first DBR layer 6 and one side of the transparent conducting layer 4 far away from the first ohmic contact layer 5; the bonding layer 3 is arranged on one side of the metal reflector 15 far away from the insulating medium layer 12 and the transparent conducting layer 4.
Further, after growing the second oxide layer 9 and before growing the active layer 8, the method further includes: growing a second confinement layer 17; after the growth of the active layer 8 and before the growth of the first oxide layer 7, the method further includes: a first confinement layer 16 is grown.
Further, after removing the substrate 18, the buffer layer 19 and the etch stop layer 20 by etching, and before etching the second DBR layer 11, providing a protective layer 14 on a side of the second DBR layer 11 away from the second ohmic layer; the protective layer 14 and the outer peripheral portion of the second DBR layer 11 are etched to expose the second ohmic contact layer 10, and then an annular second electrode 13 surrounding the second DBR layer 11 and the protective layer 14 is provided on a side of the second ohmic contact layer 10 adjacent to the second DBR layer 11.
The following are specific embodiments of the present invention:
example one
As shown in fig. 2, a VCSEL laser includes: the semiconductor device includes an electrode, a conductive substrate 2, a bonding layer 3, a metal mirror 15, a transparent conductive layer 4, a first ohmic contact layer 5, a first DBR layer 6, a first oxide layer 7, a first confinement layer 16, an active layer 8, a second confinement layer 17, a second oxide layer 9, a second ohmic contact layer 10, a second DBR layer 11, and a protective layer 14, which are sequentially stacked in a vertical direction.
The transparent conductive layer 4 is located in a central region of the transparent conductive layer 4, the first ohmic contact layer 5 is located in a central region of the first DBR layer 6, and the second DBR layer 11 and the protective layer 14 are respectively disposed corresponding to a central region of the second ohmic contact layer 10.
The VCSEL laser further comprises an insulating medium layer 12 and an annular second electrode 13, the insulating medium layer 12 is arranged between the conductive substrate 2 and the first DBR layer 6 and surrounds the transparent conductive layer 4 and the first ohmic contact layer 5, the sum of the thicknesses of the transparent conductive layer 4 and the first ohmic contact layer 5 is equal to the thickness of the insulating medium layer 12, the transparent conductive layer 4 is close to one side of the metal reflector 15 and the insulating medium layer 12 is close to one side of the metal reflector 15 and is located on the same plane. The annular second electrode 13 is disposed on the second ohmic contact layer 10 on the side where the second DBR layer 11 is disposed, and is disposed to surround the second DBR layer 11, and the sum of the thicknesses of the second DBR layer 11 and the protective layer 14 is smaller than the thickness of the annular second electrode 13.
The transparent conductive layer 4 and the first ohmic contact layer 5 form a first conductive path a, the first oxide layer 7 has a second conductive path b, the second oxide layer 9 has a third conductive path c, and a hollow portion of the annular second electrode 13 forms a light emitting hole d. The center of the light-emitting hole d, the center of the third conductive channel c, the center of the second conductive channel b and the center of the first conductive channel a are located on the same straight line, and the sizes of the light-emitting hole d, the third conductive channel c, the second conductive channel b and the first conductive channel a in the horizontal direction are linearly and sequentially reduced.
Example two
As shown in fig. 3 to 12, a method for fabricating a VCSEL laser according to the first embodiment includes the following steps:
s1, growing a buffer layer 19, an etch stop layer 20, a second DBR layer 11, a second ohmic contact layer 10, a second oxide layer 9, a second confinement layer 17, an active layer 8, a first confinement layer 16, a first oxide layer 7, a first DBR layer 6, and a first ohmic contact layer 5 on a substrate 18 in this order from bottom to top; wherein the first oxide layer 7 has a confinement structure and a second conductive channel b surrounded by the confinement structure due to oxidation, and the second oxide layer 9 has a confinement structure and a third conductive channel c surrounded by the confinement structure due to oxidation; as shown in fig. 3;
s2, disposing a transparent conductive layer 4 on the upper surface of the first ohmic contact layer 5; as shown in fig. 4;
s3, performing standard photolithography and etching on the peripheral regions of the transparent conductive layer 4 and the first ohmic contact layer 5 to form a cylindrical transparent conductive layer 4 and a cylindrical first ohmic contact layer 5, exposing the annular upper surface of the first DBR layer 6, where the transparent conductive layer 4 and the first ohmic contact layer 5 are located in the annular central region of the first DBR layer 6, and the transparent conductive layer 4 and the first ohmic contact layer 5 form a first conductive channel a; as shown in fig. 5;
s4, forming an insulating dielectric layer 12 on the annular upper surface of the exposed first DBR layer 6, wherein the insulating dielectric layer 12 surrounds the first ohmic contact layer 5 and the transparent conductive layer 4, and the upper surface of the insulating dielectric layer 12 is flush with the upper surface of the transparent conductive layer 4; as shown in fig. 6;
s5, respectively arranging metal reflectors 15 on the upper surfaces of the insulating medium layers 12 and the transparent conducting layers 4; as shown in fig. 7;
s6, bonding the conductive substrate 2 to the upper surface of the metal mirror 15 through the bonding layer 3; as shown in fig. 8;
s7, removing the substrate 18, the buffer layer 19 and the etch stop layer 20 in sequence by etching, revealing the entire lower surface of the second DBR layer 11; as shown in fig. 9;
s8, disposing a protective layer 14 on the upper surface of the second DBR layer 11; arranging a first electrode 1 on one side of the conductive substrate 2 far away from the bonding layer 3; as shown in fig. 10;
s9, performing standard photolithography and etching on the protective layer 14 and the peripheral region of the second DBR layer 11 to form a cylindrical protective layer 14 and second DBR layer 11, exposing the annular lower surface of the second ohmic contact layer 10, wherein the protective layer 14 and the second DBR layer 11 are located in the central region of the second ohmic contact layer 10; as shown in fig. 11;
s10, evaporating an annular second electrode 13 surrounding the second DBR layer 11 and the protective layer 14 on the annular lower surface of the exposed second ohmic contact layer 10; the thickness of the annular second electrode 13 is larger than the sum of the thicknesses of the second DBR layer 11 and the protective layer 14. The hollow part of the annular second electrode 13 forms a light exit hole d, and the sizes of the light exit hole d, the third conductive channel c, the second conductive channel b and the first conductive channel a in the horizontal direction are linearly and sequentially reduced, as shown in fig. 12.
It should be noted that the terms "upper", "lower", "horizontal" and "vertical" in the present invention are merely words of description for convenience and indicating relative positions,
to sum up, the utility model provides a VCSEL laser has the advantage that the facula is little, the lasing is efficient, and has simple process's advantage.
It will be understood by those skilled in the art that in the present disclosure, the terms "horizontal", "vertical", "up", "down", etc. indicate orientations or positional relationships based on those shown in the drawings, which are merely for convenience of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus the above terms should not be construed as limiting the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A VCSEL laser, comprising: a first electrode, a conductive substrate, a bonding layer, a transparent conductive layer, a first ohmic contact layer, a first DBR layer, a first oxide layer, an active layer, a second oxide layer, a second ohmic contact layer, and a second DBR layer, which are sequentially stacked in a vertical direction, wherein the transparent conductive layer is located at a central region of the conductive substrate, the first ohmic contact layer is located at a central region of the first DBR layer, the second DBR layer is located at a central region of the second ohmic contact layer,
the transparent conductive layer is arranged between the conductive substrate and the first DBR layer and surrounds the transparent conductive layer and the first ohmic contact layer, the annular second electrode is arranged on one side of the second ohmic contact layer, on which the second DBR layer is arranged, and surrounds the second DBR layer,
the transparent conducting layer and the first ohmic contact layer form a first conducting channel, the first oxidation layer is provided with a second conducting channel, the second oxidation layer is provided with a third conducting channel, the hollow part of the annular second electrode forms a light-emitting hole, and the size of the light-emitting hole, the size of the third conducting channel, the size of the second conducting channel and the size of the first conducting channel in the horizontal direction are sequentially reduced.
2. A VCSEL laser according to claim 1, wherein a center of said light exit aperture, a center of said third conductive channel, a center of said second conductive channel, and a center of said first conductive channel are located on a same straight line.
3. A VCSEL laser according to claim 2, wherein the dimensions of said light exit aperture, said third conductive channel, said second conductive channel, and said first conductive channel decrease in a linear order in a horizontal direction.
4. The VCSEL laser of claim 2, wherein the dimensions of the light exit aperture, the third conductive path, the second conductive path, and the first conductive path decrease in a non-linear order in a horizontal direction.
5. A VCSEL laser according to claim 1, wherein the sum of the thicknesses of said transparent conductive layer and said first ohmic contact layer is the same as the thickness of said insulating medium layer.
6. A VCSEL laser according to claim 1, further comprising a protective layer disposed on a side of the second DBR facing away from the second ohmic contact layer, wherein the annular second electrode is disposed around the protective layer, and wherein a sum of thicknesses of the second DBR layer and the protective layer is less than a thickness of the annular second electrode.
7. The VCSEL laser according to claim 1, further comprising metal mirrors respectively disposed between the bonding layer and the transparent conductive layer and between the bonding layer and the insulating dielectric layer, the transparent conductive layer being located in a central region of the metal mirrors.
8. The VCSEL laser of claim 1, further comprising a first confinement layer disposed between the first oxide layer and the active layer and a second confinement layer disposed between the second oxide layer and the active layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921119037.0U CN209860347U (en) | 2019-07-17 | 2019-07-17 | VCSEL laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921119037.0U CN209860347U (en) | 2019-07-17 | 2019-07-17 | VCSEL laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209860347U true CN209860347U (en) | 2019-12-27 |
Family
ID=68943120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921119037.0U Withdrawn - After Issue CN209860347U (en) | 2019-07-17 | 2019-07-17 | VCSEL laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209860347U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233425A (en) * | 2019-07-17 | 2019-09-13 | 厦门乾照半导体科技有限公司 | A kind of VCSEL laser and preparation method thereof |
| CN112615256A (en) * | 2020-12-23 | 2021-04-06 | 厦门市三安集成电路有限公司 | Vertical cavity surface emitting laser |
-
2019
- 2019-07-17 CN CN201921119037.0U patent/CN209860347U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233425A (en) * | 2019-07-17 | 2019-09-13 | 厦门乾照半导体科技有限公司 | A kind of VCSEL laser and preparation method thereof |
| CN110233425B (en) * | 2019-07-17 | 2023-12-15 | 厦门乾照光电股份有限公司 | VCSEL laser and manufacturing method thereof |
| CN112615256A (en) * | 2020-12-23 | 2021-04-06 | 厦门市三安集成电路有限公司 | Vertical cavity surface emitting laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111682402B (en) | Surface-emitting semiconductor laser chip with symmetrical DBR structure and preparation method thereof | |
| CN107742824B (en) | Vertical cavity surface emitting semiconductor laser and manufacturing method thereof | |
| CN110416874B (en) | Method for preparing small-spacing vertical cavity surface emitting laser array | |
| CN103107482A (en) | Single-mode photonic crystal vertical cavity surface emitting laser and preparation method thereof | |
| CN211929898U (en) | Vertical cavity surface emitting laser device | |
| US11646548B2 (en) | Multi-active-region cascaded semiconductor laser | |
| JP7462352B2 (en) | Vertical cavity surface emitting laser and method of manufacturing same | |
| JP2010114214A (en) | Vertical-cavity surface-emitting semiconductor laser element, method of manufacturing the same, and optical transmission apparatus | |
| CN209860347U (en) | VCSEL laser | |
| JP2010182975A (en) | Surface emitting semiconductor laser and method of manufacturing the same | |
| KR100345452B1 (en) | Long-wavelength vertical-cavity surface-emitting laser device having diffusion area in edge of upper mirror and method for forming the same | |
| CN110233425B (en) | VCSEL laser and manufacturing method thereof | |
| TW200803091A (en) | Diode laser device | |
| CN110600995B (en) | High-power external cavity semiconductor laser | |
| CN108879326B (en) | VCSEL chip with horizontal structure, manufacturing method thereof and laser device | |
| CN109616868B (en) | VCSEL chip with planar structure and manufacturing method thereof | |
| CN217607196U (en) | Vertical cavity surface emitting laser | |
| CN217607198U (en) | Vertical cavity surface emitting laser device | |
| TWI809872B (en) | Vertical cavity surface emitting laser | |
| CN110752509B (en) | VCSEL unit with asymmetric oxidation structure | |
| CN111048990A (en) | Laser chip and preparation method thereof | |
| CN111048995A (en) | Laser and preparation method thereof | |
| CN111900621A (en) | VCSEL chip and manufacturing method thereof | |
| CN217563042U (en) | Surface emitting laser | |
| CN212784189U (en) | Combined VCSEL chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200123 Address after: 361101 Xiangtian Road 259-269, Xiamen Torch High-tech Zone (Xiangan) Industrial Zone, Xiamen City, Fujian Province Patentee after: Xiamen Changelight Co.,Ltd. Address before: 361001 Xiangtian Road 267, Xiangtan Industrial Zone, Xiamen Torch High-tech Zone, Fujian Province Patentee before: XIAMEN QIANZHAO SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20191227 Effective date of abandoning: 20231215 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20191227 Effective date of abandoning: 20231215 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |