CN107742824A - A kind of vertical-cavity-face emitting semiconductor laser and preparation method thereof - Google Patents
A kind of vertical-cavity-face emitting semiconductor laser and preparation method thereof Download PDFInfo
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- CN107742824A CN107742824A CN201711250227.1A CN201711250227A CN107742824A CN 107742824 A CN107742824 A CN 107742824A CN 201711250227 A CN201711250227 A CN 201711250227A CN 107742824 A CN107742824 A CN 107742824A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of vertical-cavity-face emitting semiconductor laser and preparation method thereof, P-type electrode structure includes transparent insulating layer, transparency conducting layer and grid electrode.Transparent insulating layer and grid electrode have default patterning, form the light-emitting window of multiple array arrangements.The fringe region of light-emitting window can eliminate the high-order mode of light-emitting window fringe region by destructive interference, increase the loss of high-order mode, and loss of the fringe region of light-emitting window to basic mode is smaller.The opening of square frame is the central area of through hole, central area only has layer of transparent conductive layer, and the transparency conducting layer of central area directly contacts with the p-type dbr structure of lower section, and electric current is injected by the transparency conducting layer under grid electrode, the gain of basic mode is increased, and the gain to setting high-order mode is smaller.It is thereby achieved that the single mode outgoing of high power high stability.
Description
Technical field
The present invention relates to technical field of semiconductor device, in particular, is related to a kind of vertical-cavity-face emitting semiconductor and swashs
Light device and preparation method thereof.
Background technology
Vertical cavity surface emitting laser is a kind of new laser, because it has good laser stability, relevant
Property and beam quality, are widely used in the fields such as laser lighting, spectrometer, sensor, biologic medical, optical communication.With this
The further development in a little fields, the requirement of noise spectra of semiconductor lasers (VCSEL) also more come also more, such as laser lighting, laser thunder
Up to etc. field need the domain requirement such as VCSEL, atomic clock, the optic communication single mode of high-power high-efficiency, high light beam quality
VCSEL.Recent years, the VCSEL demands of the single-mode output of high-power high-efficiency are also increasing.
In order to obtain high-power output, the light extraction aperture of single tube vertical cavity surface emitting laser will typically accomplish that hundreds of is micro-
Rice, but bigbore light-emitting window easily causes each point current density in hole uneven, the oxidation particularly in oxidation limiting layer
Nearby easily there is current focusing phenomenon in hole, causes non-uniform light in light hole, forms larger far-field divergence angle, influence laser
Beam quality.And in order to realize the output of single mode, generally there is two ways：(1) it is poor to increase modal gain, makes the increasing of basic mode
Benefit is higher than the gain of high-order mode, and then by higher single mode rejection ratio, realizes single basic mode single longitudinal mode lasing；(2) pattern is increased
Loss difference, the light of each pattern can all be lost in communication process, if can realize that the loss of higher order mode is more than
The loss of basic mode, then equally realize single basic mode lasing.
In the prior art, VCSEL can not realize that single mode is compatible with high power, high efficiency progress, and can give birth on a large scale
Production application.
The content of the invention
In order to solve the above problems, technical solution of the present invention provide a kind of vertical-cavity-face emitting semiconductor laser and its
Preparation method, the single mode purpose compatible with high power, high efficiency progress is realized, and being capable of large-scale production application.
To achieve these goals, the present invention provides following technical scheme：
A kind of vertical-cavity-face emitting semiconductor laser, the vertical-cavity-face emitting semiconductor laser include：
Substrate, the substrate have relative first surface and second surface；
It is arranged on the first surface N-type dbr structure；
Active layer positioned at the N-type dbr structure surface；
Positioned at the p-type dbr structure of the active layer surface；
P-type electrode structure positioned at the p-type dbr structure surface；
Positioned at the N-type electrode structure of the second surface；
Wherein, the P-type electrode structure includes：Transparent insulating layer positioned at the p-type dbr structure surface is described transparent
Insulating barrier includes the square frame of multiple dot matrix arrangement, has gap between the square frame；Cover the square frame and the p-type DBR
The transparency conducting layer of body structure surface；Positioned at the grid electrode of the layer at transparent layer, the electrode of the grid electrode is linear
Into the multiple and one-to-one light-emitting window of the square frame, a square frame is provided with a through hole.
Preferably, in above-mentioned vertical-cavity-face emitting semiconductor laser, the N-type dbr structure includes：
The alternatively distributed first AlGaAs layers of multilayer and the 2nd AlGaAs layers, the first AlGaAs layers and the 2nd AlGaAs
The refractive index of layer is different；
Wherein, the first AlGaAs layers and the 2nd AlGaAs layers are n-type doping.
Preferably, in above-mentioned vertical-cavity-face emitting semiconductor laser, the p-type dbr structure includes：
Positioned at the oxidation limiting layer of the active layer surface, the oxidation limiting layer has described in central area and encirclement
The fringe region of central area；The central area is used to pass through photon and carrier, and the outer peripheral areas is used to limit light
Son and carrier；
The alternatively distributed 3rd AlGaAs layers of multilayer and the 4th AlGaAs layers positioned at the oxidation limiting layer surface, institute
The refractive index for stating the 3rd AlGaAs layers and the 4th AlGaAs layers is different；
Wherein, the 3rd AlGaAs layers and the 4th AlGaAs layers are p-type doping.
Preferably, in above-mentioned vertical-cavity-face emitting semiconductor laser, the oxidation limiting layer is the high Al of p-type doping
The AlGaAs layers of component；
Wherein, the Al content of the AlGaAs layers of the high Al contents is more than the Al content of the 3rd AlGaAs layers, and greatly
In the Al content of the 4th AlGaAs layers；The fringe region of the AlGaAs layers of the high Al contents forms oxidation by aoxidizing
Aluminium.
Preferably, in above-mentioned vertical-cavity-face emitting semiconductor laser, the optical thickness of the transparency conducting layer is equal to
Quarter-wave even-multiple；
The optical thickness of the transparent insulating layer is quarter-wave odd-multiple.
Preferably, in above-mentioned vertical-cavity-face emitting semiconductor laser, the length and width of the opening of the square frame is not
Together, the laser singly polarized to be emitted is adjusted by adjusting the length-width ratio of the opening.
Present invention also offers a kind of preparation method, for making the vertical-cavity-face emitting semiconductor described in any of the above-described
Laser, the preparation method include：
A substrate is provided, the substrate has relative first surface and second surface；
N-type dbr structure is formed in the first surface；
Active layer is formed on the N-type dbr structure surface；
P-type dbr structure is formed in the active layer surface；
P-type electrode structure is formed on the p-type dbr structure surface, N-type electrode structure is formed in the second surface；
Wherein, the P-type electrode structure includes：Transparent insulating layer positioned at the p-type dbr structure surface is described transparent
Insulating barrier includes the square frame of multiple dot matrix arrangement, has gap between the square frame；Cover the square frame and the p-type DBR
The transparency conducting layer of body structure surface；Positioned at the grid electrode of the layer at transparent layer, perpendicular to the direction of the substrate
On, the electrode wires of the grid electrode surround the square frame.
Preferably, it is described to include in first surface formation N-type dbr structure in above-mentioned preparation method：
The alternatively distributed first AlGaAs layers of multilayer and the 2nd AlGaAs layers are formed in the first surface, first
The refractive index of AlGaAs layers and the 2nd AlGaAs layers is different；
Wherein, the first AlGaAs layers and the 2nd AlGaAs layers are n-type doping.
Preferably, it is described to include in active layer surface formation p-type dbr structure in above-mentioned preparation method：
The AlGaAs layers of the high Al contents of p-type doping are formed in the active layer surface；
The alternatively distributed 3rd AlGaAs layers of multilayer and the 4th AlGaAs layers, institute are formed on the surface of the AlGaAs layers
The refractive index for stating the 3rd AlGaAs layers and the 4th AlGaAs layers is different；The 3rd AlGaAs layers and the described 4th
AlGaAs layers are p-type doping；
AlGaAs layers, the 3rd AlGaAs layers and the 4th AlGaAs layers to the high Al contents are carved
Erosion, form the mesa structure positioned at the active layer surface；
Oxidation is carried out to the peripheral regions of the AlGaAs layers of the high Al contents and forms aluminum oxide so that the high Al contents
The fringe regions of AlGaAs layers aoxidize to form aluminum oxide, its fringe region is used to limit photon and carrier, its center
Domain is used to pass through photon and carrier.
Preferably, it is described to include in p-type dbr structure surface formation P-type electrode structure in above-mentioned preparation method：
After carrying out reduction processing to the second surface, N-type electrode structure is formed in the second surface；
Transparent insulating layer is formed on the p-type dbr structure surface；
The transparent insulating layer is performed etching, the square frame of multiple dot matrix arrangements is formed, there is gap between the square frame；
Form the transparency conducting layer for covering the square frame and the p-type dbr structure surface；
Grid electrode is formed in the layer at transparent layer, the electrode wires of the grid electrode form the multiple and side
The one-to-one light-emitting window of frame, a square frame is provided with a through hole.
The vertical-cavity-face emitting semiconductor laser provided by foregoing description, technical solution of the present invention and its making
In method, P-type electrode structure includes transparent insulating layer, transparency conducting layer and grid electrode.Transparent insulating layer and grid electrode
With default patterning, the light-emitting window of multiple array arrangements is formed.The fringe region of light-emitting window can pass through destructive interference
Eliminate the high-order mode of light-emitting window fringe region, increase the loss of high-order mode, and damage of the fringe region of light-emitting window to basic mode compared with
It is small.The opening of square frame is the central area of through hole, and central area only has layer of transparent conductive layer, the transparency conducting layer of central area
Directly contacted with the p-type dbr structure of lower section, electric current is injected by the transparency conducting layer under grid electrode, increases the increasing of basic mode
Benefit, and the gain to high-order mode is smaller.It is thereby achieved that the single mode outgoing of high power high stability.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of structural representation of the semiconductor laser of vertical cavity surface provided in an embodiment of the present invention；
Fig. 2-Figure 15 is a kind of schematic flow sheet of preparation method provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
With reference to figure 1, Fig. 1 is a kind of structural representation of the semiconductor laser of vertical cavity surface provided in an embodiment of the present invention
Figure, the vertical-cavity-face emitting semiconductor laser include：Substrate 9, the substrate 9 have relative first surface and second
Surface；It is arranged on the first surface N-type dbr structure 5；Active layer 8 positioned at the surface of N-type dbr structure 5；Positioned at described
The p-type dbr structure 4 on the surface of active layer 8；P-type electrode structure positioned at the surface of p-type dbr structure 4；Positioned at second table
The N-type electrode structure in face.
Wherein, the P-type electrode structure includes：Transparent insulating layer 3 positioned at the surface of p-type dbr structure 4, it is described
Bright insulating barrier 3 includes the square frame of multiple dot matrix arrangement, has gap between the square frame；Cover the square frame and the p-type
The transparency conducting layer 2 on the surface of dbr structure 4；Grid electrode 1 positioned at the surface of transparency conducting layer 2, the grid electrode 1
Electrode wires have the multiple and one-to-one light-emitting window of the square frame, and a square frame is provided with a through hole.Light-emitting window
For rectangle, the square frame is filled up completely with the light-emitting window.
The N-type dbr structure 5 includes：The alternatively distributed first AlGaAs layers 51 of multilayer and the 2nd AlGaAs layers 52, the
The refractive index of one AlGaAs layers 51 and the 2nd AlGaAs layers 52 is different；Wherein, the first AlGaAs layers 51 and second
AlGaAs layers 52 are n-type doping.It can realize that p-type is adulterated by adulterating Si elements in AlGaAs layers.The N-type DBR knots
, can be by setting the two refraction of the content control of Al components in the first AlGaAs layers 51 and the 2nd AlGaAs layers 52 in structure 5
Rate.
The p-type dbr structure 4 includes：Oxidation limiting layer 6 positioned at the surface of active layer 8, the oxidation limiting layer 6
Fringe region 11 with central area 7 and the encirclement central area 7；The central area 7 be used for by photon and
Carrier, the outer peripheral areas 11 are used to limit photon and carrier；Multilayer positioned at the surface of oxidation limiting layer 6 replaces
The 3rd AlGaAs layers 41 and the 4th AlGaAs layers 42 of distribution, the 3rd AlGaAs layers 41 and the 4th AlGaAs layers
42 refractive index is different.Wherein, the 3rd AlGaAs layers 51 and the 4th AlGaAs layers 52 are p-type doping.Can be with
Realize that p-type is adulterated by adulterating C element in AlGaAs layers., can be by setting the described 3rd in the p-type dbr structure 4
The two refractive index of the content control of Al components in AlGaAs layers 51 and the 4th AlGaAs layers 52.
The oxidation limiting layer 6 is the AlGaAs layers of the high Al contents of p-type doping；Wherein, the high Al contents
The Al content of AlGaAs layers is more than the Al content of the 3rd AlGaAs layers, and more than the Al content of the 4th AlGaAs layers；
The fringe region of the AlGaAs layers of the high Al contents forms aluminum oxide by oxidation.
The optical thickness of the transparency conducting layer 2 is equal to quarter-wave even-multiple, covers the square frame, the side
Gap and the square frame opening between frame；The optical thickness of the transparent insulating layer 3 is quarter-wave odd-multiple.
The length and width of the opening of the square frame is different, and the length-width ratio by adjusting the opening adjusts single inclined to be emitted
The laser to shake.
On the direction of substrate 9, p-type dbr structure 4, transparency conducting layer 2 and transparent insulating layer 3 are pros
Shape.The center of light-emitting window and the center superposition of the square frame.
In vertical-cavity-face emitting semiconductor laser described in the embodiment of the present invention, using two BBR, (distributed Bragg is anti-
Penetrate mirror) structure forms resonant cavity shoot laser, specifically, the laser of generation is between p-type dbr structure 4 and N-type dbr structure 5
It is emitted in resonant cavity after multiple reflections vibration.
The region of transparency conducting layer 2 and square frame face is the fringe region of light-emitting window, due to the light of the transparency conducting layer 2
Learn thickness and be equal to quarter-wave even-multiple, the optical thickness of the transparent insulating layer 3 is quarter-wave odd number
Times, the fringe region of light-emitting window can eliminate the high-order mode of light-emitting window fringe region by destructive interference, increase the damage of high-order mode
Consumption, and loss of the fringe region of light-emitting window to basic mode is smaller.The opening of square frame is the central area of through hole, and central area only has
Layer of transparent conductive layer, the transparency conducting layer 2 of central area directly contact with the p-type dbr structure of lower section, and electric current passes through grid electricity
Extremely lower transparency conducting layer 2 injects, and increases the gain of basic mode, and the gain to high-order mode is smaller.It is it is thereby achieved that high
The single mode outgoing of power high stability.
P-type dbr structure 4 and P-type electrode structure are positioned at the surface mesa structure of active layer 8, perpendicular to the side of substrate 9
Upwards, the mesa structure is square.By the limiting carrier of oxidation limiting layer 6 and photon of setting, photon and carrier are allowed
In the central area 7 of oxidation limiting layer by reducing the diffraction loss of photon and the lateral loss of carrier.And set specific
Grid electrode 1, the electrode wires of grid electrode 1 are light tight, the light emission side of mesa structure are divided into multiple light-emitting windows, using net
Lattice electrode 1, the transparency conducting layer 2 connected by the frame structure restriction of transparent insulating layer 3 and grid electrode 1 correspond to multiple respectively
The center of light-emitting window provides electric current so that uniform current density in each light-emitting window, avoids table top mechanism electricity in the prior art
Flow the problem of uneven so that electro-optical efficiency further improves.
By foregoing description, vertical-cavity-face emitting semiconductor laser described in the embodiment of the present invention not only passes through light extraction
The destructive interference of the fringe region of mouth eliminates high-order mode, increases the loss of high-order mode, and the central area for passing through light-emitting window increases
Basic mode gain, to increase the gain of basic mode, realize single high-order mode outgoing of high power high stability.
Based on above-described embodiment, another embodiment of the present invention additionally provides a kind of preparation method, for making above-mentioned implementation
The example vertical-cavity-face emitting semiconductor laser, for the preparation method as shown in Fig. 2-Figure 15, Fig. 2-Figure 15 is real for the present invention
A kind of schematic flow sheet of preparation method of example offer is applied, the preparation method includes：
Step S11：As shown in Figure 2, there is provided a substrate 9.
The substrate 9 has relative first surface and second surface.
Step S12：As shown in figure 3, form N-type dbr structure 5 in the first surface.
It is described to include in first surface formation N-type dbr structure 5 in the step：Multilayer is formed in the first surface
Alternatively distributed first AlGaAs layers 51 and the 2nd AlGaAs layers 52, the first AlGaAs layers 51 and the 2nd AlGaAs layers 52
Refractive index is different；Wherein, the first AlGaAs layers 51 and the 2nd AlGaAs layers 52 are n-type doping.The N-type DBR knots
The number of plies of the first AlGaAs layers 51 and the 2nd AlGaAs layers 52 can be set according to demand in structure 5.
Step S13：As shown in figure 4, form active layer 8 on the surface of N-type dbr structure 5.
It is also possible to the active layer 8 is formed using epitaxy technique.
Step S14：As shown in Figure 5-Figure 8, p-type dbr structure 4 is formed in the active layer surface.
It is described to include in active layer surface formation p-type dbr structure 4 in the step：
First, as shown in figure 5, forming the AlGaAs layers 61 of the high Al contents of p-type doping in the active layer surface.
Then, as shown in fig. 6, forming the alternatively distributed 3rd AlGaAs layers 41 of multilayer on the surface of the AlGaAs layers 61
And the 4th AlGaAs layer 42, the refractive index of the 3rd AlGaAs layers 41 and the 4th AlGaAs layers 42 are different；It is described
3rd AlGaAs layers 41 and the 4th AlGaAs layers 42 are p-type doping.The 3rd AlGaAs layers 41 and described
The sequencing and the number of plies that four AlGaAs layers 42 are formed are not specifically limited, and can be set according to demand.
Again as shown in fig. 7, AlGaAs layers 61, the 3rd AlGaAs layers 41 and the described 4th to the high Al contents
AlGaAs layers 42 perform etching, and form the mesa structure positioned at the active layer surface 8.Specifically, substrate and its surface are tied
Structure is cleaned, and then by first time photoetching, development, mesa structure is formed by dry etching.
Finally, as shown in figure 8, carrying out oxidation formation oxidation to the peripheral regions of the AlGaAs layers 61 of the high Al contents
Aluminium so that the oxidation of fringe region 11 of the AlGaAs layers 61 of the high Al contents forms aluminum oxide, and its fringe region 11 is used to limit
Photon and carrier processed, its central area 7 are used to pass through photon and carrier, ultimately form p-type DBR as shown in Figure 8
Structure 4.Because Al components are higher in AlGaAs layers 61, therefore in high temperature environments, steam is easily by the outside of AlGaAs layers 61
Oxidation reaction occurs into Al, forms the oxidation limiting layer 6 of setting structure.Can be each in p-type dbr structure 4 by setting
The content of AlGaAs kind Al components so that during oxidation, only aoxidize AlGaAs layers 61.
Step S14：As shown in Fig. 9-Figure 15, P-type electrode structure is formed on the p-type dbr structure surface, described second
Surface forms N-type electrode structure 10.
Wherein, the P-type electrode structure includes：Transparent insulating layer 3 positioned at the p-type dbr structure surface is described transparent
Insulating barrier 3 includes the square frame of multiple dot matrix arrangement, has gap between the square frame；Cover the square frame and the p-type DBR
The transparency conducting layer 2 on the surface of structure 4；Grid electrode 1 positioned at the surface of transparency conducting layer 2, the electrode of the grid electrode
Line forms the multiple and one-to-one light-emitting window of the square frame, and a square frame is provided with a through hole.
It is described to include in p-type dbr structure surface formation P-type electrode structure 10 in the step：
First, such as Fig. 9, after carrying out reduction processing to the second surface, N-type electrode structure is formed in the second surface
10。
Then, as shown in Figure 10, transparent insulating layer 3 is formed on the surface of p-type dbr structure 4.Coating process can be passed through
Form the transparent insulating layer 3.
Again as is illustrated by figs. 11 and 12, Figure 11 is plumb cut figure, and Figure 12 is top view, and the transparent insulating layer 3 is entered
Row etching, the square frame of multiple dot matrix arrangements is formed, there is gap between the square frame.Square frame can be with array arrangement.According to demand
Set the number of square frame.Square frame is rectangular box, has the p-type dbr structure 4 that opening exposes aperture position.Specifically, it can lead to
Photoetching and development are crossed, transparent insulating layer 3 is performed etching by the way of dry etching or wet etching, forms square frame knot
Structure.
Again as shown in figure 13 and shown in Figure 14, Figure 13 is plumb cut figure, and Figure 14 is top view, is formed and covers the square frame
And the transparency conducting layer 2 on the surface of p-type dbr structure 4.The transparency conducting layer 2 can be equally formed using coating process,
Cover the square frame and the p-type dbr structure 4 not covered by frame structure.
Finally, as shown in Fig. 1 and Figure 15, Fig. 1 is plumb cut figure, and Figure 15 is top view, in the table of transparency conducting layer 2
Face forms grid electrode 1, and the electrode wires of the grid electrode form the multiple and one-to-one light-emitting window of the square frame, and one logical
A square frame is provided with hole.The electrode wires of grid electrode 1 cover the region outside the square frame, and its electrode wires is impermeable
Light is lower equivalent to the transparent electrode material in traditional whole face, impedance.
In the preparation method, the transparency conducting layer 2 can be ITO layer, and the transparent insulating layer 3 can be titanium dioxide
Silicon layer.
Preparation method described in the embodiment of the present invention is used to make vertical cavity emitting semiconductor laser described in above-described embodiment
Device so that light emission side forms the light-emitting window of multiple array arrangements, and the center of light-emitting window only has transparency conducting layer 2, and light-emitting window
Fringe region (i.e. described square frame face region) by transparent insulating layer 3 and transparency conducting layer 2 stacking form, pass through set the two
Optical thickness, high-order mode can be eliminated.The preparation method manufacture craft is simple, reproducible, easy to spread, only need to pass through plating
Film, photoetching, etching can be achieved, it is not necessary to increase equipment in addition.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (10)
- A kind of 1. vertical-cavity-face emitting semiconductor laser, it is characterised in that the vertical-cavity-face emitting semiconductor laser bag Include：Substrate, the substrate have relative first surface and second surface；It is arranged on the first surface N-type dbr structure；Active layer positioned at the N-type dbr structure surface；Positioned at the p-type dbr structure of the active layer surface；P-type electrode structure positioned at the p-type dbr structure surface；Positioned at the N-type electrode structure of the second surface；Wherein, the P-type electrode structure includes：Transparent insulating layer positioned at the p-type dbr structure surface, the transparent insulation Layer includes the square frame of multiple dot matrix arrangement, has gap between the square frame；Cover the square frame and the p-type dbr structure The transparency conducting layer on surface；Positioned at the grid electrode of the layer at transparent layer, the electrode wires of the grid electrode form more It is individual with the one-to-one light-emitting window of the square frame, be provided with a square frame in a through hole.
- 2. vertical-cavity-face emitting semiconductor laser according to claim 1, it is characterised in that the N-type dbr structure bag Include：The alternatively distributed first AlGaAs layers of multilayer and the 2nd AlGaAs layers, the first AlGaAs layers and the 2nd AlGaAs layers Refractive index is different；Wherein, the first AlGaAs layers and the 2nd AlGaAs layers are n-type doping.
- 3. vertical-cavity-face emitting semiconductor laser according to claim 1, it is characterised in that the p-type dbr structure bag Include：Positioned at the oxidation limiting layer of the active layer surface, the oxidation limiting layer has central area and surrounds the center The fringe region in region；The central area is used to pass through photon and carrier, the outer peripheral areas for limit photon with And carrier；The alternatively distributed 3rd AlGaAs layers of multilayer and the 4th AlGaAs layers positioned at the oxidation limiting layer surface, described The refractive index of three AlGaAs layers and the 4th AlGaAs layers is different；Wherein, the 3rd AlGaAs layers and the 4th AlGaAs layers are p-type doping.
- 4. vertical-cavity-face emitting semiconductor laser according to claim 3, it is characterised in that the oxidation limiting layer is The AlGaAs layers of the high Al contents of p-type doping；Wherein, the Al content of the AlGaAs layers of the high Al contents is more than the Al content of the 3rd AlGaAs layers, and is more than institute State the Al content of the 4th AlGaAs layers；The fringe region of the AlGaAs layers of the high Al contents forms aluminum oxide by oxidation.
- 5. vertical-cavity-face emitting semiconductor laser according to claim 1, it is characterised in that the transparency conducting layer Optical thickness is equal to quarter-wave even-multiple；The optical thickness of the transparent insulating layer is quarter-wave odd-multiple.
- 6. according to the vertical-cavity-face emitting semiconductor laser described in claim any one of 1-5, it is characterised in that the square frame Opening length and width it is different, the laser singly polarized with being emitted is adjusted by the length-width ratio for adjusting the opening.
- 7. a kind of preparation method, for making the vertical-cavity-face emitting semiconductor laser as described in claim any one of 1-6, Characterized in that, the preparation method includes：A substrate is provided, the substrate has relative first surface and second surface；N-type dbr structure is formed in the first surface；Active layer is formed on the N-type dbr structure surface；P-type dbr structure is formed in the active layer surface；P-type electrode structure is formed on the p-type dbr structure surface, N-type electrode structure is formed in the second surface；Wherein, the P-type electrode structure includes：Transparent insulating layer positioned at the p-type dbr structure surface, the transparent insulation Layer includes the square frame of multiple dot matrix arrangement, has gap between the square frame；Cover the square frame and the p-type dbr structure The transparency conducting layer on surface；Positioned at the grid electrode of the layer at transparent layer, on the direction of the substrate, institute The electrode wires for stating grid electrode surround the square frame.
- 8. preparation method according to claim 7, it is characterised in that described to form N-type dbr structure in the first surface Including：The alternatively distributed first AlGaAs layers of multilayer and the 2nd AlGaAs layers, the first AlGaAs layers are formed in the first surface And the 2nd AlGaAs layers refractive index it is different；Wherein, the first AlGaAs layers and the 2nd AlGaAs layers are n-type doping.
- 9. preparation method according to claim 7, it is characterised in that described to form p-type DBR knots in the active layer surface Structure includes：The AlGaAs layers of the high Al contents of p-type doping are formed in the active layer surface；Form the alternatively distributed 3rd AlGaAs layers of multilayer and the 4th AlGaAs layers on the surface of the AlGaAs layers, described the The refractive index of three AlGaAs layers and the 4th AlGaAs layers is different；The 3rd AlGaAs layers and the 4th AlGaAs Layer is p-type doping；AlGaAs layers, the 3rd AlGaAs layers and the 4th AlGaAs layers to the high Al contents perform etching, shape Into the mesa structure positioned at the active layer surface；Oxidation is carried out to the peripheral regions of the AlGaAs layers of the high Al contents and forms aluminum oxide so that the high Al contents The fringe region of AlGaAs layers aoxidizes to form aluminum oxide, and its fringe region is used to limit photon and carrier, its central area For passing through photon and carrier.
- 10. preparation method according to claim 7, it is characterised in that described to form p-type on the p-type dbr structure surface Electrode structure includes：After carrying out reduction processing to the second surface, N-type electrode structure is formed in the second surface；Transparent insulating layer is formed on the p-type dbr structure surface；The transparent insulating layer is performed etching, the square frame of multiple dot matrix arrangements is formed, there is gap between the square frame；Form the transparency conducting layer for covering the square frame and the p-type dbr structure surface；Grid electrode is formed in the layer at transparent layer, the electrode wires of the grid electrode form the multiple and square frame one Light-emitting window corresponding to one, a square frame is provided with a through hole.
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