CN101521354A - Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization direction - Google Patents
Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization direction Download PDFInfo
- Publication number
- CN101521354A CN101521354A CN200910066781A CN200910066781A CN101521354A CN 101521354 A CN101521354 A CN 101521354A CN 200910066781 A CN200910066781 A CN 200910066781A CN 200910066781 A CN200910066781 A CN 200910066781A CN 101521354 A CN101521354 A CN 101521354A
- Authority
- CN
- China
- Prior art keywords
- vcsel
- crystal orientation
- polarization direction
- dbr layer
- gaas substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of vertical-cavity-face emitting semiconductor lasers, especially a kind of vertical cavity surface emitting laser in controllable polarization direction, including p-type DBR layer, active layer, N-shaped DBR layer, GaAs substrate, the face the p electrode being coated on p-type DBR layer and the GaAs substrate bottom that is laid in the face n electrode, p-type DBR layer described in it is the cylinder that cross section is rectangle or diamond shape, and make two adjacent edges of its rectangle or two diagonal lines of diamond shape be respectively parallel to GaAs substrate (110) crystal orientation and (
) crystal orientation. Vcsel structure manufacturing process of the present invention is simple and direct, reproducible, be easy promote, by the polarization direction of VCSEL emergent light control well substrate (110) crystal orientation and (
) crystal orientation.
Description
Technical field
The present invention relates to a kind of vertical cavity surface emitting laser (VCSEL), particularly a kind of VCSEL that realizes controlling the polarization direction.
Background technology
In the laser display light source field, most of LASER Light Source of taking at present all are with high-power edge-emission semiconductor laser pumping all-solid-state laser, generate blue, green glow through frequency inverted again, directly carry out cavity external frequency multiplication with high-power V CSEL and then have a lot of advantages.Will carry out cavity external frequency multiplication efficiently, the polarization direction that the fundamental frequency light of VCSEL has stable and controllable is very important.
General VCSEL is grown on (001) substrate, has good cylindrical symmetry structure, swash the linearly polarized photon of penetrating on any direction in theory, thereby the polarization direction of emergent light is uncontrollable.In addition, along with injection current, add the variation of external conditions such as strain, temperature, the output polarization state of light also changes.So control VCSEL fundamental frequency light polarization is very important.The Polarization Control scheme of the VCSEL of bibliographical information is mainly as follows at present:
(1) 1999 on September 14, people such as disclosed Pamulapati U.S. Pat 5,953,362 in, described the method for a stress application in VCSEL and controlled polarization.At US 5,953, in 362 patents, VCSEL is that eutectic ground combines with a nucleus substrate, and this substrate has default anisotropic thermal expansion coefficient.In forming process, in laser cavity, apply a uniaxial strain.
(2) 2000 on November 28, people such as disclosed Yoshikawa U.S. Pat 6, in 154,479, a VCSEL has been described, wherein the control of polarization direction is realized by the cross sectional dimensions of restriction top minute surface, so that a horizontal basic mode of list only is provided in the waveguide that is provided by minute surface.Make a non-circular or oval device in order to the control polarization.
(3) 2004 on August 31, people such as disclosed Matsui U.S. Pat 6,785,318, among the B1, described by introducing stressor and controlled the method for VCSEL polarization direction.Stressor is deposited on the semiconductor structure, and the stress that it brings has caused the anisotropy of birefringence effect and gain.Make active layer away from stressor, increase the gain inequality that surface stress and stressor produced, form stable outgoing polarization direction.
(4) 2005 on April 26, people such as disclosed Aggerstam U.S. Pat 6,885, among the 690B2, described by form transverse mode and the polarization state of deielectric-coating control VCSEL at light-emitting window.This film is made up of two-layer or multilayered medium material, the reflectivity difference of every layer material, and the size of deielectric-coating is littler than bright dipping aperture.
(5) 2008 on February 19, people such as disclosed Ostermann U.S. Pat 7,333, among the 522B2, the polarization state with the integrated concave grating control of monolithic VCSEL has been described.At first Bragg reflecting layer, have at least one deck that periodic pattern is arranged in the active layer and second Bragg reflecting layer, come the polarization state of stable light-beam like this.
The formed device architecture complexity of above-mentioned all Polarization Control schemes of taking, its making step is more loaded down with trivial details, and equipment and process conditions are had very high requirement, be difficult to technically promote, and the selectivity of the VCSEL polarization direction of said structure is also bad.
Summary of the invention
The objective of the invention is in order to solve present VCSEL device emergent light polarization direction uncontrollability, the defective of the polarization mode complexity when particularly VCSEL works under big electric current, propose a kind of vertical cavity surface emitting laser of controllable polarization direction, realize the polarization effect of stable VCSEL with simple and direct technological means.
The vertical cavity surface emitting laser of controllable polarization direction of the present invention, have habitual vertical cavity surface emitting laser p type distributed Bragg reflector (DBR) layer, active layer, n type distributed Bragg reflector (DBR) layer, GaAs substrate, be coated on the p face electrode on the p type DBR layer and the hierarchical structure of the n face electrode of the GaAs substrate bottom of being laid in, be characterized in, described p type DBR layer is that cross section is the cylinder of rectangle or rhombus, and makes two diagonal of two adjacent edges of its rectangle or rhombus be parallel to (110) crystal orientation and (110) crystal orientation of GaAs substrate respectively.
In order to control the polarization direction of emergent light, among the present invention p type DBR layer is made the cylinder that cross section is rectangle or rhombus, and two diagonal that make two adjacent edges of its rectangle or rhombus are parallel to (110) crystal orientation and (110) crystal orientation of GaAs substrate respectively, and this is to be (110) crystal orientation and (110) crystal orientation because the VCSEL of (001) substrate swashs two main polarization directions penetrating.Owing to adopted rectangular cylinder or rhombus column body structure among the present invention, after plating p face electrode, the distribution of injection current just is not that each is to uniformly, but mainly concentrate on (110) crystal orientation of substrate and (110) crystal orientation, make electric current be injected with certain directional selectivity, thereby the gain that makes active layer produce have certain directional selectivity.
Simple and direct, the good reproducibility of vcsel structure manufacturing process of the present invention is promoted easily, with the polarization direction better controlled of VCSEL emergent light (110) crystal orientation and (110) crystal orientation at substrate.
Description of drawings
Fig. 1 is the structural representation of the vertical cavity surface emitting laser of controllable polarization direction of the present invention;
Fig. 2, Fig. 3 are the vertical views of structure shown in Figure 1.
Embodiment
The embodiment that provides below in conjunction with accompanying drawing is described in further detail structure of the present invention
With reference to Fig. 1,2,3, a kind of vertical cavity surface emitting laser of controllable polarization direction comprises p type DBR layer 2, oxidation window 3, Al
2O
3Passivation layer 4, active layer 5, n type DBR layer 6, GaAs substrate 7, be coated on the n face electrode 8 of the p face electrode 1 on the p type DBR layer 2 and GaAs substrate 7 bottoms that are laid in, described p type DBR layer 2 is that cross section is the cylinder of rectangle or rhombus, and makes two diagonal of two adjacent edges of its rectangle or rhombus be parallel to (110) crystal orientation and (110) crystal orientation of GaAs substrate 7 respectively.
The manufacture craft key step of VCSEL device of the present invention: the epitaxial wafer with VCSEL carries out attenuate earlier, then the p face is implemented wet etching, p type DBR layer is made the cylinder that cross section is rectangle or rhombus, and two diagonal that make two adjacent sides of its rectangle or rhombus are parallel to (110) crystal orientation and (110) crystal orientation of substrate respectively, and the degree of depth of etching just arrives active layer.Prepare p face electrode by alloy technique then.Also to pass through reduction process earlier to the n face, then implement the double-sided alignment etching, form n face light-emitting window through lift-off technology then.By cleavage and encapsulation, finish the making of VCSEL device at last.
Claims (1)
1. the vertical cavity surface emitting laser of a controllable polarization direction, mainly comprise p type DBR layer (2), active layer (5), n type DBR layer (6), GaAs substrate (7), be coated on the p face electrode (1) on the p type DBR layer (2) and the n face electrode (8) of GaAs substrate (7) bottom that is laid in, it is characterized in that, described p type DBR layer (2) is that cross section is the cylinder of rectangle or rhombus, and makes two diagonal of two adjacent edges of its rectangle or rhombus be parallel to (110) crystal orientation and (110) crystal orientation of GaAs substrate (7) respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910066781A CN101521354A (en) | 2009-04-08 | 2009-04-08 | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization direction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910066781A CN101521354A (en) | 2009-04-08 | 2009-04-08 | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization direction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101521354A true CN101521354A (en) | 2009-09-02 |
Family
ID=41081791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910066781A Pending CN101521354A (en) | 2009-04-08 | 2009-04-08 | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization direction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101521354A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074886A (en) * | 2010-12-15 | 2011-05-25 | 厦门大学 | Crystal orientation selected polarization state controllable microchip laser |
| CN106785908A (en) * | 2016-12-30 | 2017-05-31 | 北京工业大学 | A kind of non-selection oxidation vertical cavity surface emitting laser based on secondary epitaxy technology |
| CN107742824A (en) * | 2017-12-01 | 2018-02-27 | 中国科学院长春光学精密机械与物理研究所 | A kind of vertical-cavity-face emitting semiconductor laser and preparation method thereof |
-
2009
- 2009-04-08 CN CN200910066781A patent/CN101521354A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074886A (en) * | 2010-12-15 | 2011-05-25 | 厦门大学 | Crystal orientation selected polarization state controllable microchip laser |
| CN106785908A (en) * | 2016-12-30 | 2017-05-31 | 北京工业大学 | A kind of non-selection oxidation vertical cavity surface emitting laser based on secondary epitaxy technology |
| CN107742824A (en) * | 2017-12-01 | 2018-02-27 | 中国科学院长春光学精密机械与物理研究所 | A kind of vertical-cavity-face emitting semiconductor laser and preparation method thereof |
| CN107742824B (en) * | 2017-12-01 | 2020-04-03 | 中国科学院长春光学精密机械与物理研究所 | Vertical cavity surface emitting semiconductor laser and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7693205B2 (en) | Surface emitting laser | |
| CN101521353B (en) | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization through emergent light window electrode structure | |
| CN111029900B (en) | Three-cavity coupling laser based on space-weighted time symmetry | |
| CN110197992B (en) | High-efficiency VCSEL chip and manufacturing method thereof | |
| JP5111161B2 (en) | Structure having photonic crystal layer and surface emitting laser using the same | |
| KR20070013324A (en) | Method for fabricating group iii nitride devices and devices fabricated using method | |
| CN104300364B (en) | Vertical-cavity-face emitting semiconductor laser | |
| JP2003332687A (en) | Method for manufacturing vertical cavity optical device | |
| CN107093840B (en) | Independent addressable liquid crystal tuning vertical cavity surface emitting laser arrays and preparation method | |
| CN106654857A (en) | High-beam-quality large-scale VCSEL in-phase coupled array | |
| CN101521354A (en) | Vertical cavity surface emitting laser (VCSEL) capable of controlling polarization direction | |
| US11955773B2 (en) | Laser device on the basis of a photonic crystal having pillar-shaped or wall-shaped semiconductor elements, and methods for the operation and production thereof | |
| CN101867148A (en) | FP (Fabry-Perot) cavity laser with reflecting surfaces of photonic crystals and vertical emergent surface | |
| CN102801107A (en) | Vertical-cavity surface-emitting laser and manufacturing method thereof | |
| CN104917052A (en) | Variable-period tilted grating laser and preparation method thereof | |
| CN101714744B (en) | Non-annular cavity type semiconductor laser | |
| CN108616031A (en) | A kind of single polarization semiconductor laser with tunable and preparation method thereof containing alignment films | |
| CN104993374A (en) | Single-mode lasing circular micro-cavity laser | |
| CN101174757A (en) | Mini-disc laser with cylindrical structure based on TM module lasing | |
| CN103325898B (en) | 1.3 mum wavelengths without polarization high efficiency light-emitting quantum dot device and method for designing | |
| CN101521355B (en) | Vertical cavity surface emitting laser capable of controlling outer cavity polarization | |
| EP1085625A1 (en) | Surface optical amplifier and method of producing the same | |
| EP1225669B1 (en) | A polarization-stable vertical cavity surface emitting laser device and a method of stabilizing the polarization of such a laser device | |
| JP2011192878A (en) | Semiconductor laser device | |
| CN104393485B (en) | Laser array relevant device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090902 |