CN111029900B - Three-cavity coupling laser based on space-weighted time symmetry - Google Patents
Three-cavity coupling laser based on space-weighted time symmetry Download PDFInfo
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- CN111029900B CN111029900B CN201911363666.2A CN201911363666A CN111029900B CN 111029900 B CN111029900 B CN 111029900B CN 201911363666 A CN201911363666 A CN 201911363666A CN 111029900 B CN111029900 B CN 111029900B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
Abstract
The utility model provides a three chamber coupling laser based on space symmetry time symmetry includes from bottom to top in order: the semiconductor device comprises a lower electrode layer, an N-type waveguide layer, an active region, a P-type waveguide layer, an insulating layer and an upper electrode layer; the P-type waveguide layer further comprises: the gain cavity is symmetrically arranged on two sides of the lossy cavity; insulating layers are arranged on the upper surfaces of the loss cavity and the gain cavity, and window regions are arranged on the insulating layers of the two gain cavities at the outermost sides; the upper electrode layer is arranged on the insulating layer; and respectively regulating and controlling the gain of the gain cavity on two sides of the loss cavity to couple the gain cavity with the loss cavity. The invention can realize the regulation and control of the laser mode and the regulation and control of the energy distribution of the laser mode.
Description
Technical Field
The disclosure relates to the field of micro-nano structures and semiconductor optoelectronic devices, in particular to a three-cavity coupling laser based on space-time symmetry.
Background
With the continuous development of the information society, the information technology using photons as carriers is produced, and the laser is an ideal photon source device. In order to meet the requirements of various applications in real life, lasers in various wavelength bands are produced accordingly. In order to increase the information transfer capacity of the optical fiber, a plurality of single-mode lasers need to be coupled to realize wavelength division multiplexing, which puts high requirements on mode regulation of the single-mode lasers.
Currently, the implementation of single-mode laser mainly depends on four methods: the first method is to achieve single mode in the cavity by optical feedback; the second approach enhances mode confinement by reducing the mode size in the laser cavity; the third method is to form the spatial distribution of the pump light into the laser cavity to realize mode selection; a fourth approach is to use the space-time symmetry to construct a single mode laser.
In recent years, the study of non-hermitian systems has become a topic, and in early non-hermitian systems, the imaginary part of the hamiltonian is often used to describe the dissipation of the system, which is only a non-essential, image-only description of physical phenomena, because such descriptions are not unitary. In 1998, based on previous studies on non-hermitian hamiltonian quantities, Carl M Bender and Stefan Boettcher proposed a class of non-hermitian hamiltonian quantities that satisfy the properties of space-time symmetry, and demonstrated that the intrinsic energy of such hamiltonian quantities is real over a range of parameters.
By utilizing the defect property of space-time symmetry in the Hamiltonian, the mode of the laser can be regulated and controlled, so that better single-mode property is realized.
Disclosure of Invention
Technical problem to be solved
The disclosure provides a three-cavity coupled laser based on space-time symmetry, which at least partially solves the technical problems provided above and realizes mode regulation and energy distribution regulation and control on the laser.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a three-cavity coupled laser based on an astronomical time symmetry, comprising in order from bottom to top: the semiconductor device comprises a lower electrode layer, an N-type waveguide layer, an active region, a P-type waveguide layer, an insulating layer and an upper electrode layer; the P-type waveguide layer further comprises: the gain cavity is symmetrically arranged on two sides of the lossy cavity; insulating layers are arranged on the upper surfaces of the loss cavity and the gain cavity, and window regions are arranged on the insulating layers of the two gain cavities at the outermost sides; the upper electrode layer is arranged on the insulating layer;
and respectively regulating and controlling the gain of the gain cavity on two sides of the loss cavity to couple the gain cavity with the loss cavity.
In some embodiments of the present disclosure, the loss cavity and the gain cavity are a plurality of ridge waveguides disposed on the P-type waveguide layer, the ridge waveguides are parallel to each other and have the same size, and a distance between two adjacent ridge waveguides is the same.
In some embodiments of the present disclosure, the number of the ridge waveguides is three, and three ridge waveguides are sequentially used as a gain cavity, a loss cavity and a gain cavity.
In some embodiments of the present disclosure, gains of the gain cavities on both sides of the lossy cavity are separately regulated by electrical injection; the electrical injection is any one of horizontal regulation, transverse mode regulation and longitudinal mode regulation.
In some embodiments of the present disclosure, the length w0 of the three cavity coupled laser is 200 μm-5 mm; the width 10 is 3 μm to 500. mu.m.
In some embodiments of the present disclosure, the width W of the lossy cavity and the gain cavity is 3 μm-50 μm; the length 1 is 200 μm-5 mm.
In some embodiments of the present disclosure, the spacing d1 between the loss cavity and the gain cavity is 50nm-10 μm.
In some embodiments of the present disclosure, the spacing d2 between adjacent gain cavities is 50nm-10 μm.
In some embodiments of the present disclosure, the material of the insulating layer is silicon dioxide, and the thickness of the insulating layer is 100nm to 1 μm.
(III) advantageous effects
According to the technical scheme, the three-cavity coupled laser based on the space-time symmetry has at least one or part of the following beneficial effects:
(1) the method realizes the regulation of the space symmetry time symmetry break of the laser based on the longitudinal mode regulation of the space symmetry time symmetry, and realizes the degeneracy of the mode at the break point.
(2) The method realizes the three-cavity energy distribution regulation and control and can realize the corresponding regulation and control on the divergence angle of the laser at the same time based on the horizontal regulation and control of the space symmetry time symmetry.
(3) The method is based on the transverse mode regulation of the space symmetry time symmetry, the space symmetry time symmetry of the laser is regulated and controlled, and the regulation and control of energy distribution in each cavity are realized, so that the energy is more concentrated.
Drawings
Fig. 1 is a schematic perspective view of a three-cavity coupled laser based on an astronomical time symmetry according to an embodiment of the present disclosure.
Fig. 2 is a schematic front view structure diagram of a three-cavity coupled laser based on an astronomical time symmetry according to an embodiment of the present disclosure.
Fig. 3 is a schematic top view structure diagram of a three-cavity coupled laser based on an astronomical time symmetry according to an embodiment of the present disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
A 1-N type waveguide layer;
2-an active region;
a 3-P type waveguide layer;
31-a lossy cavity;
32-gain cavity;
4 an insulating layer;
5-upper electrode layer;
6-lower electrode layer.
Detailed Description
The utility model provides a three chamber coupling laser based on space symmetry time symmetry includes from bottom to top in order: the N-type waveguide layer, the active region, the P-type waveguide layer, the insulating layer and the upper electrode layer; the P-type waveguide layer further comprises: the gain cavity is symmetrically arranged on two sides of the lossy cavity; insulating layers are arranged on the upper surfaces of the loss cavity and the gain cavity, and window regions are arranged on the insulating layers of the two gain cavities at the outermost sides; the upper electrode layer is arranged on the insulating layer; and respectively regulating and controlling the gain of the gain cavity on two sides of the loss cavity to couple the gain cavity with the loss cavity. The invention can realize the regulation and control of the laser mode and the regulation and control of the energy distribution of the laser mode.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, a three-cavity coupled laser based on astronomical time symmetry is provided. Fig. 1 is a schematic perspective view of a three-cavity coupled laser based on an astronomical time symmetry according to an embodiment of the present disclosure. Fig. 2 is a schematic front view structure diagram of a three-cavity coupled laser based on an astronomical time symmetry according to an embodiment of the present disclosure. Fig. 3 is a schematic top view structure diagram of a three-cavity coupled laser based on an astronomical time symmetry according to an embodiment of the present disclosure. As shown in fig. 1 to 3, the three-cavity coupled laser based on the space-time symmetry of the present disclosure sequentially includes, from bottom to top: the lower electrode layer 6, the N-type waveguide layer 1, the active region 2, the P-type waveguide layer 3, the insulating layer 4 and the upper electrode layer 5; the P-type waveguide layer 3 further comprises: at least one lossy cavity 31 and a plurality of gain cavities 32, wherein the gain cavities 32 are symmetrically arranged on two sides of the lossy cavity 31; the upper surfaces of the loss cavity 31 and the gain cavity 32 are both provided with insulating layers 4, and the insulating layers 4 of the two outermost gain cavities 32 are provided with window regions; the upper electrode layer 5 is disposed on the insulating layer 4; the gains of the gain cavities 32 on both sides of the lossy cavity 31 are respectively controlled so that the gain cavities 32 are coupled to the lossy cavity 31. The gains of the gain cavities 32 on both sides of the lossy cavity 31 are respectively regulated and controlled through electrical injection; the electrical injection is any one of horizontal regulation, transverse mode regulation and longitudinal mode regulation.
According to the method, a standard photoetching process is carried out on a wafer grown by MOCVD to obtain a plurality of ridge waveguides, after a ridge structure is etched, a silicon dioxide layer needs to be grown above the ridge structure to play an insulating role, and then a window area is arranged on the insulating layer 4 above the two gain cavities 32 at the outermost side by utilizing an ICP (inductively coupled plasma) etching or corrosion method, so that the surfaces of the ridges are not covered by the silicon dioxide insulating layer. The laser is then covered with an upper electrode layer 5 and a lower electrode layer 6 by means of magnetron sputtering or evaporation, above and at the bottom, for injecting current. Since no window region is provided in the insulating layer 4 above the ridge in the cavity 31, the insulating layer 4 is present between the cavity 31 and the upper electrode layer 5, and no current is injected, which is called a depletion region.
By injecting current, the gain cavity 32 is symmetrical relative to the loss cavity 31 to form space-symmetric time symmetry, and by adjusting the injected current, the control of space-symmetric time symmetry is realized, so that the regulation and control of the mode are realized. The space symmetry and time symmetry are controlled to be broken, so that the mode regulation is realized, and meanwhile, the distribution of energy in each cavity is controlled, and the energy distribution of the whole laser is controlled.
The following describes each component of the three-cavity coupled laser based on the space-time symmetry in this embodiment in detail.
The loss cavity 31 and the gain cavity 32 are a plurality of ridge waveguides arranged in the P-type waveguide layer 3, and are parallel to each other and have the same size, and the distance between two adjacent ridge waveguides is the same. The width W of the lossy cavity 31 and the gain cavity 32 is 3 μm-50 μm; the length 1 is 200 μm-5 mm. The spacing d1 between the loss cavity 31 and the gain cavity 32 is 50nm-10 μm. The spacing d2 between adjacent gain cavities 32 is 50nm-10 μm. The height of the lossy cavity 31 and the gain cavity 32 is not particularly limited by this disclosure.
The length w0 of the integral structure of the three-cavity coupled laser is 200 mu m-5 mm; the width 10 is 3-500 μm; the height is not particularly limited by the present disclosure.
The material of the insulating layer 4 is silicon dioxide, and the thickness of the insulating layer 4 is 100nm-1 μm.
As a specific implementation manner, a three-cavity coupled laser based on the space-time symmetry is provided, which comprises the following components in sequence from bottom to top: a lower electrode layer 6, an N-type waveguide layer 1, an active region 2, a P-type waveguide layer 3, an insulating layer 4 and an upper electrode layer 5.
The P-type waveguide layer 3 is provided with three ridge waveguides which are parallel to each other and have the same size, and the distance between two adjacent ridge waveguides is the same. The middle ridge waveguide serves as a loss cavity 31 and the ridge waveguides on both sides serve as gain cavities 32. The width W of the lossy cavity 31 and the gain cavity 32 is 3 μm-50 μm; the length 1 is 200 μm-5 mm. The spacing d1 between the loss cavity 31 and the gain cavity 32 is 50nm-10 μm.
The gains of the gain cavities 32 on both sides of the lossy cavity 31 are respectively controlled so that the gain cavities 32 are coupled to the lossy cavity 31.
Specifically, when the electrical injection is horizontal regulation, the three-cavity energy distribution is regulated and controlled, and the divergence angle of the laser can be correspondingly regulated and controlled.
Specifically, when the electrical injection is the transverse mode regulation, the regulation of energy distribution in each cavity is realized, so that the energy is more concentrated.
Specifically, when the electrical injection is longitudinal mode regulation, the space-weighted time symmetry break of the laser is regulated, and the degeneracy of the mode is realized at the break point.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly recognize that the present disclosure is based on three-cavity coupled lasers with space-time symmetry.
In summary, the three-cavity coupled laser based on the space-time symmetry can realize the regulation and control of the laser mode and the regulation and control of the laser mode energy distribution. Has long-term effect on the research of micro-nano structure and the technical development in the technical field of semiconductor optoelectronic devices.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (9)
1. A three-cavity coupling laser based on space-time symmetry comprises the following components from bottom to top in sequence: the semiconductor device comprises a lower electrode layer, an N-type waveguide layer, an active region, a P-type waveguide layer, an insulating layer and an upper electrode layer; the P-type waveguide layer further comprises: the gain cavity is symmetrically arranged on two sides of the lossy cavity; insulating layers are arranged on the upper surfaces of the loss cavity and the gain cavity, and window regions are arranged on the insulating layers of the two gain cavities at the outermost sides; the upper electrode layer is arranged on the insulating layer;
and respectively regulating and controlling the gain of the gain cavity on two sides of the loss cavity to couple the gain cavity with the loss cavity.
2. The three-cavity coupled laser based on astronomical time symmetry as claimed in claim 1, wherein said depletion cavity and said gain cavity are a plurality of ridge waveguides disposed in said P-type waveguide layer, said plurality of ridge waveguides are parallel and same in size, and the distance between two adjacent ridge waveguides is same.
3. The three-cavity coupled laser based on astronomical time symmetry of claim 2, wherein the number of said ridge waveguides is three, and three of said ridge waveguides are sequentially used as a gain cavity, a loss cavity and a gain cavity.
4. The three-cavity coupled laser based on astronomical time symmetry of claim 1, wherein the gain of the gain cavity on both sides of the loss cavity is separately regulated by electrical injection; the electrical injection is any one of horizontal regulation, transverse mode regulation and longitudinal mode regulation.
5. The three-cavity coupled laser based on astronomical time symmetry of claim 1, wherein the length w of said three-cavity coupled laser0200 μm-5 mm; width l0Is 3-500 μm.
6. The three cavity coupled laser based on astronomical time symmetry of claim 1, wherein the width W of said loss and gain cavities is 3-50 μ ι η; the length l is 200 μm-5 mm.
7. The three cavity coupled laser based on astronomical time symmetry of claim 1, wherein the separation d1 of said loss and gain cavities is 50nm-10 μm.
8. The three cavity coupled laser based on astronomical time symmetry of claim 1, wherein the spacing d2 between adjacent gain cavities is 50nm-10 μm.
9. The three-cavity coupled laser based on astronomical time symmetry of claim 1, wherein the material of said insulating layer is silicon dioxide, and the thickness of said insulating layer is 100nm-1 μm.
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| CN112162352A (en) * | 2020-09-09 | 2021-01-01 | 山东建筑大学 | Continuously adjustable splitting ratio directional coupler based on space scale-time symmetry |
| CN114284859B (en) * | 2020-09-28 | 2023-12-26 | 中国科学院半导体研究所 | Multi-cavity coupled laser based on space-time symmetry and application thereof |
| CN112382924B (en) * | 2020-11-12 | 2022-04-22 | 中国科学院半导体研究所 | Double-waveguide distributed feedback semiconductor laser and laser generation method |
| CN112462534B (en) * | 2020-12-21 | 2022-04-29 | 华中科技大学 | Ultra-close range metal electrode thermal modulation phase shifter |
| CN112909739B (en) * | 2021-01-26 | 2023-03-24 | 中国科学院半导体研究所 | Bar-shaped semiconductor laser array with topological property and application thereof |
| CN113097859A (en) * | 2021-03-30 | 2021-07-09 | 中国科学院半导体研究所 | FP laser of integrated side direction modulator |
| CN113937620B (en) * | 2021-09-02 | 2023-02-10 | 华中科技大学 | High-power single transverse mode semiconductor laser and control method thereof |
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