CN111146691B - A surface emitting laser array - Google Patents
A surface emitting laser array Download PDFInfo
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- CN111146691B CN111146691B CN202010059375.0A CN202010059375A CN111146691B CN 111146691 B CN111146691 B CN 111146691B CN 202010059375 A CN202010059375 A CN 202010059375A CN 111146691 B CN111146691 B CN 111146691B
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- 239000010408 film Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
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Abstract
本发明公开了一种面发射激光器阵列，其包括位于同一芯片上的若干个激光器单管，所述激光器单管纵向设置，且相邻的激光器单管错位排布用于实现向各个激光器单管光束输出区中有源层的载流子侧向注入；且在所述激光器单管的光束输出区设置有浅刻蚀槽，在DBR区设置有深刻蚀槽。本发明中激光器单管沿纵向错位排布的面发射激光器阵列的输出光束横截面为矩形阶梯状，这种光束形状大大降低了光束整形难度，很容易通过光斑剪切和拼接获得高质量高功率密度的输出光束；且通过浅刻蚀槽和深刻蚀槽保证了激光模式的调控和稳定。
The invention discloses a surface emitting laser array, which includes several single laser tubes located on the same chip, the single laser tubes are arranged longitudinally, and the adjacent single laser tubes are arranged in a staggered position for realizing the direction of each laser single tube. The carriers of the active layer are injected laterally in the beam output area; and a shallow etching groove is arranged in the beam output area of the single laser tube, and a deep etching groove is arranged in the DBR area. In the present invention, the cross section of the output beam of the surface emitting laser array in which the single laser tube is arranged longitudinally staggered is a rectangular step shape, which greatly reduces the difficulty of beam shaping, and it is easy to obtain high quality and high power through spot cutting and splicing. The density of the output beam; and the regulation and stability of the laser mode are ensured by the shallow etching groove and the deep etching groove.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a surface emitting laser array.
Background
The horizontal cavity surface emitting distributed feedback semiconductor laser is a semiconductor laser which realizes the oscillation of laser in a cavity along longitudinal feedback based on a special waveguide and grating structure and emits light perpendicular to the surface of a chip, overcomes the disadvantages of complex emergent light spots, large divergence angle and the like inherent in the traditional edge emitting laser, and has the remarkable advantages of single longitudinal mode working, high wavelength temperature stability, easy integration and the like.
In the international prior art, different laser arrangements such as cross arrangement and hexagonal star arrangement are arranged on a chip to achieve the purposes of simplifying a light beam coupling system and improving the optical power density; in addition, the device structure is designed and optimized by introducing special micro-nano structures such as a high-order Bragg reflector, a conical gain area, a circular and elliptical output area, a transverse Bragg grating, a circular grating and a non-uniform linear grating so as to achieve the purposes of improving the beam quality and improving the output power.
The two-dimensional surface emitting laser array and the monolithic integrated phase-locked surface emitting distributed feedback semiconductor laser array which can realize the mutual injection locking of high power output are also provided in China. In the laser array, the mutual injection between the longitudinal adjacent units and the end face lateral coupling based on the right-angle prism are utilized to realize the two-dimensional array phase locking, and the coherent laser beam with high power and single mode is obtained. The phase-locked laser can simultaneously realize the phase locking in and among the Talbot external cavity structures based on the Talbot self-imaging principle, and finally stably output coherent laser with high power, narrow line width and small divergence angle.
However, the introduction of all the above special structures also puts higher theoretical and technical requirements on the design, preparation and adjustment of the device while improving the working performance of the device, and affects the output power, thermal stability and working life of the laser to different degrees, reducing the yield and increasing the manufacturing cost.
Disclosure of Invention
In order to solve the above problems, the present invention provides a surface emitting laser array, in which adjacent laser single tubes are arranged in a longitudinally staggered manner, so that a carrier is laterally injected into an active layer of a beam output region where no contact electrode is provided in each laser single tube, and beam shaping and coupling difficulties are reduced.
The technical scheme adopted by the invention is as follows:
the utility model provides a surface emitting laser array, its includes a plurality of laser instrument single tube that is located same chip, the laser instrument single tube vertically sets up, and a plurality of the laser instrument single tube is misplaced in proper order and arranges and is used for realizing the carrier side direction injection to the active layer in each laser instrument single tube light beam output region.
Preferably, the laser single tube includes a first DBR section, a first electrode region, a beam output region, a second electrode region, and a second DBR section, which are sequentially arranged from top to bottom, and the first DBR section, the first electrode region, the second electrode region, and the second DBR section are symmetrical with respect to the beam output region.
Preferably, shallow etching grooves are formed in the light beam output region and close to the first electrode region and the second electrode region of the single laser tubes on the two adjacent sides of the light beam output region, the lengths of the shallow etching grooves and the light beam output region are the same and are used for forming a ridge structure to limit an optical field in the waveguide, and the shallow etching grooves are of a polygonal structure.
Preferably, deep etching grooves are arranged in the first DBR region and the second DBR region and close to one side of the first electrode region and one side of the second electrode region of the single tube of the adjacent laser respectively, and the deep etching grooves are of a polygonal prism structure.
Preferably, the surfaces of the first and second DBR sections are each etched with a grating serving as a high reflectivity mirror, the grating being covered with a thin film to form the passive DBR section.
Preferably, the surface of the light beam output area is etched with a second-order grating for realizing surface output coupling and longitudinal feedback coupling of light.
Preferably, a contact electrode is disposed between the first DBR section and the beam output section, and the contact electrode is covered to a surface of the first DBR section;
a contact electrode is also disposed between the second DBR section and the beam output section, and covers a surface of the second DBR section.
Preferably, the first electrode region, the second electrode region, the first DBR region, and the second DBR region each include a p-side electrode layer, a p-side cap layer, a p-side cladding layer, an active layer, an n-side cladding layer, an n-side cap layer, a buffer layer, a substrate layer, and an n-side electrode, which are sequentially disposed from top to bottom. Wherein for the first DBR section and the second DBR section, an insulating film is additionally provided between the p-side electrode layer and the p-cap layer.
Preferably, the light beam output region comprises a p-type cover layer, a p-type cladding layer, an active layer, an n-type cladding layer, an n-type cover layer, a buffer layer, a substrate layer and an n-side electrode which are arranged in sequence from top to bottom.
Preferably, the substrate layers of the first DBR section and the second DBR section are provided with an insulating dielectric film, and the length of the insulating dielectric film is greater than the length of the first DBR section but less than the sum of the lengths of the first DBR section and the first electrode region.
Compared with the prior art, the cross section of the output light beam of the surface emitting laser array with the laser single tubes arranged along the longitudinal direction in a staggered mode is in a rectangular step shape, the light beam shape greatly reduces the light beam shaping difficulty, and the output light beam with high quality and high power density can be obtained easily through light spot shearing and splicing.
Drawings
Fig. 1 is a top view of a surface emitting laser array according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a laser single tube in a surface-emitting laser array according to an embodiment of the present invention;
FIG. 3 is an enlarged view at A in FIG. 2;
fig. 4 is a cross-sectional view of a laser monotube in a surface emitting laser array according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view A-A' of FIG. 3;
fig. 6 is a sectional view of B-B' in fig. 3.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "vertical", "lateral", "longitudinal", "front", "rear", "left", "right", "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not mean that the device or member to which the present invention is directed must have a specific orientation or position, and thus, cannot be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The embodiment of the invention provides a surface-emitting laser array, which comprises a plurality of laser single tubes 100 positioned on the same chip, wherein the laser single tubes 100 are longitudinally arranged, and a plurality of adjacent laser single tubes 100 are sequentially arranged in a staggered manner to realize the lateral injection of carriers of active layers in light beam output regions of the laser single tubes 100;
specifically, the sequential staggered arrangement of the plurality of laser units 100 means that the top ends of the plurality of laser single tubes 100 are oblique lines instead of broken lines formed by vertical dislocation; in fig. 1, five laser single tubes 100 are arranged in a staggered manner to form a laser array;
thus, by adopting the structure, the cross section of the output beam of the surface emitting laser array in which the laser single tubes 100 are longitudinally arranged in a staggered manner is in a rectangular step shape, the beam shape greatly reduces the beam shaping difficulty, and the output beam with high quality and high power density can be easily obtained by cutting and splicing light spots.
As shown in fig. 2, the laser monotube 100 includes a first DBR section 1, a first electrode section 2, a beam output section 3, a second electrode section 4, and a second DBR section 5, which are sequentially arranged from top to bottom, and the first DBR section 1, the first electrode section 2, the second electrode section 4, and the second DBR section 5 are symmetrical with respect to the beam output section 3;
assuming that the adjacent laser single tubes 100 are sequentially shifted upward from left to right, the first DBR section 1 of the adjacent laser single tubes 100 forms an upward-inclined line segment. After dislocation, the left and right (lateral) adjacent two regions have different functions, and the first electrode regions 2 and the second electrode regions 4 of the adjacent laser monotube 100 are positioned at the left and right sides of the light beam output region 3, so that carriers injected from the electrode regions at the two sides can drift and diffuse to the active layer of the light beam output region positioned in the middle.
As shown in fig. 3, shallow etching grooves 6 are arranged in the light beam output region 3 at positions close to two sides of the first electrode region 2 and the second electrode region 4 of the single laser tube at two adjacent sides, the length of the shallow etching groove 6 is the same as that of the light beam output region 3, and the shallow etching groove 6 is in a polygonal prism structure and is used for forming a ridge-shaped structure to limit an optical field in the waveguide;
the shallow etching groove 6 is smaller in width and the same in length as the light beam output region 3, and is mainly used for forming a ridge structure to limit an optical field in the waveguide.
thus, the trenches 7 are etched back to a depth up to the n-cap layer 26. The deep etching groove 7 is arranged for eliminating the influence of the first electrode region 2 and the second electrode region 4 on the first DBR region 1 and the second DBR region 5 respectively between the adjacent laser single tubes 100, and the shape of the deep etching groove can be adjusted and optimized according to the requirement.
As shown in fig. 4, the surfaces of the first DBR section 1 and the second DBR section 5 are each etched with a grating 11 serving as a high-reflectivity mirror, and the grating 11 is covered with a thin film 12 to form a passive DBR section;
a second-order grating 31 is etched on the surface of the light beam output area 3 to realize surface output coupling and longitudinal feedback coupling of light;
thus, after etching the grating 11 on the surfaces of the first DBR section 1 and the second DBR section 5 of the single laser tube 100, an insulating medium (e.g., SiO) is selected2Or Si3N4) The film 12 covers it to make a passive DBR section; and a second-order grating 31 is etched and manufactured on the surface of the chip corresponding to the light beam output area 3 in the laser single tube 100, so that the surface output coupling and the longitudinal feedback coupling of light are realized.
A contact electrode 8 is arranged between the first DBR section 1 and the beam output section 3 of the same laser single tube 100, and the contact electrode 8 covers the surface of the first DBR section 1;
a contact electrode 8 is also disposed between the second DBR section 5 and the beam output section 3 of the same laser single tube 100, and the contact electrode 8 covers the surface of the second DBR section 5.
As shown in fig. 5 to 6, each of the first electrode region 2, the second electrode region 4, the first DBR section 1 and the second DBR section 5 includes a p-side electrode layer 21, a p-cap layer 22, a p-cladding layer 23, an active layer 24, an n-cladding layer 25, an n-cap layer 26, a buffer layer 27, a substrate layer 28 and an n-side electrode 29, which are sequentially arranged from top to bottom.
The beam output region 3 comprises a p-type cover layer 22, a p-type cladding layer 23, an active layer 24, an n-type cladding layer 25, an n-type cover layer 26, a buffer layer 27, a substrate layer 28 and an n-type electrode 29 which are arranged from top to bottom in sequence.
An insulating dielectric film 281 is arranged between the substrate layer 28 of the first DBR section 1 and the second DBR section 5 and the n-plane electrode 29, and the length of the insulating dielectric film 281 is greater than the length of the first DBR section 1 but less than the sum of the lengths of the first DBR section 1 and the first electrode region 2;
thus, an insulating dielectric film 281 is formed on the substrate layers 28 of the first DBR section 1 and the second DBR section 5 at both ends of the laser single tube 100, and the longitudinal length of the insulating dielectric film 281 is greater than the length of the first DBR section 1 but less than the sum of the lengths of the first DBR section 1 and the first electrode section 2; then, the n-side of the whole laser monotube 100 is subjected to electrode fabrication, and the substrate layer 28 of the beam output region 3 and the region coated with the insulating medium film 281 are completely covered by the n-side electrode 29.
In this embodiment:
electrode regions (a first electrode region 2 and a second electrode region 4) of the laser monotube 100 at adjacent positions are positioned at the left side and the right side of a light beam output region 3 of the laser monotube 100, and shallow etching grooves 6 are formed in the light beam output region 3 at positions close to the two sides of the electrode regions of the adjacent lasers;
firstly, in the aspect of electricity, the parameters of the shallow etching area are set to be beneficial to adjusting the lateral transmission of carriers injected into the adjacent laser electrode area, so that the gain of an active layer in a light beam output area 3 is controllable, and the working threshold of a laser array is reduced;
secondly, in the aspect of optics, a ridge waveguide structure is formed in the light beam output region 3 by the arrangement of the shallow etching region, namely, the optical field in the cavity is limited along the lateral direction and the transverse direction, so that the stability of a laser mode is ensured; in addition, the mode coupling strength between adjacent lasers can be changed by adjusting the geometric dimension of the shallow etching groove, and the optimization of parameters such as mode field distribution, limiting factors and the like of the lasers is facilitated.
Compared with the traditional second-order grating surface-emitting distributed feedback laser, the second-order grating 31 and the electrode are separated, and carriers are supplied to the active layer of the light beam output region 3 in a lateral carrier injection mode; the arrangement is favorable for reducing the modulation difficulty of the carrier distribution in the device, and realizes the controllability of the light field distribution influenced by the carrier distribution;
in addition, the arrangement directly reduces or even eliminates the influence of carrier injection on the refractive index and loss of the grating layer, contributes to reducing the design difficulty of the device, and simultaneously improves the working stability of the device.
In the DBR regions (the first DBR region 1 and the second DBR region 3) of the laser single tube 100, a deep etching groove 7 is arranged at a position close to an adjacent laser electrode region (the first electrode region 2 or the second electrode region 4), so that the limitation on current carriers is favorably formed, the influence of the current carriers on the DBR regions is eliminated, and the leakage and the waste of the current carriers are reduced;
in addition, the arrangement of the shape and the depth of the deep-etching region directly influences the optical field distribution in the DBR region, and can be used for regulating and controlling the mode characteristics of the laser.
The cross section of the output beam of the surface emitting laser array with the laser single tubes 100 arranged along the longitudinal direction in a staggered mode is in a rectangular step shape, the beam shape greatly reduces the beam shaping difficulty, and the output beam with high quality and high power density can be obtained easily through spot shearing and splicing. The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. The surface-emitting laser array is characterized by comprising a plurality of laser single tubes (100) positioned on the same chip, wherein the laser single tubes (100) are longitudinally arranged, and the laser single tubes (100) are sequentially arranged in a staggered manner to realize the lateral injection of carriers of active layers in light beam output areas of the laser single tubes (100);
the laser single tube (100) comprises a first DBR region (1), a first electrode region (2), a light beam output region (3), a second electrode region (4) and a second DBR region (5) which are sequentially arranged from top to bottom, and the first DBR region (1), the first electrode region (2), the second electrode region (4) and the second DBR region (5) are symmetrical relative to the light beam output region (3);
shallow etching grooves (6) are formed in the light beam output region (3) and close to the two sides of the first electrode region (2) and the second electrode region (4) of the laser single tubes (100) on the two adjacent sides of the light beam output region, the lengths of the shallow etching grooves (6) and the light beam output region (3) are the same and are used for forming a ridge structure to limit an optical field in the waveguide, and the shallow etching grooves (6) are of a polygon prism structure.
2. The surface-emitting laser array of claim 1, wherein the first DBR section (1) and the second DBR section (5) are respectively provided with deep etching grooves (7) at positions close to one side of the first electrode region (2) and one side of the second electrode region (4) of the adjacent laser single tube (100), and the deep etching grooves (7) are of a polygonal prism structure.
3. A surface emitting laser array according to claim 1 or 2, wherein the surfaces of the first DBR section (1) and the second DBR section (5) are each etched with a grating (11) serving as a high reflectivity mirror, the grating (11) being covered with a thin film (12) to form the passive DBR section.
4. A surface-emitting laser array according to claim 3, characterized in that the beam output region (3) is surface-etched with a second-order grating (31) for surface out-coupling and longitudinal back-coupling of light.
5. A surface-emitting laser array according to claim 1, characterized in that a contact electrode (8) is provided between the first DBR section (1) and the beam output section (3) of the same single laser tube (100), and said contact electrode (8) is applied to the surface of the first DBR section (1);
a contact electrode (8) is also arranged between the second DBR section (5) and the beam output section (3) of the single tube of the same laser, and the contact electrode (8) covers the surface of the second DBR section (5).
6. The surface-emitting laser array of claim 5, wherein the first electrode region (2), the second electrode region (4), the first DBR region (1) and the second DBR region (5) each comprise a p-side electrode layer (21), a p-side cap layer (22), a p-side cladding layer (23), an active layer (24), an n-side cladding layer (25), an n-side cap layer (26), a buffer layer (27), a substrate layer (28) and an n-side electrode (29) arranged in sequence from top to bottom; wherein for the first DBR section (1) and the second DBR section (5), an insulating film is provided between the p-side electrode layer (21) and the p-cap layer (22).
7. The surface-emitting laser array according to claim 6, wherein the beam output region (3) comprises a p-type cap layer (22), a p-type cladding layer (23), an active layer (24), an n-type cladding layer (25), an n-type cap layer (26), a buffer layer (27), a substrate layer (28) and an n-type electrode (29) arranged in this order from top to bottom.
8. A surface-emitting laser array according to claim 7, characterized in that the substrate layers (28) of the first and second DBR sections (1, 5) are provided with an insulating dielectric film (281), and the length of the insulating dielectric film (281) is larger than the length of the first DBR section (1) but smaller than the sum of the lengths of the first DBR section (1) and the first electrode section (2).
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| US5987043A (en) * | 1997-11-12 | 1999-11-16 | Opto Power Corp. | Laser diode arrays with offset components |
| US20050254539A1 (en) * | 2004-05-17 | 2005-11-17 | Klimek Daniel E | Staggered array coupler |
| CN103048792A (en) * | 2011-10-11 | 2013-04-17 | 深圳市光峰光电技术有限公司 | Light source system and laser light source |
| CN106329315A (en) * | 2016-11-21 | 2017-01-11 | 长春理工大学 | Surface-emitting distribution feedback laser |
| CN107785776A (en) * | 2017-10-17 | 2018-03-09 | 中国科学院半导体研究所 | Curved tapers photon crystal laser and array, array light source group |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2017204618A (en) * | 2016-05-13 | 2017-11-16 | 株式会社リコー | Surface emitting laser element, surface emitting laser array, image formation device, image display device, laser working machine, laser annealing device, ignition device, and method for manufacturing surface emitting laser element |
| CN106356714B (en) * | 2016-11-21 | 2019-03-19 | 长春理工大学 | A kind of side-coupled surface-emitting laser and its manufacturing method |
| CN110649464A (en) * | 2019-07-05 | 2020-01-03 | 武汉仟目激光有限公司 | Vertical cavity surface emitting laser and intensive array structure thereof |
| CN110247302B (en) * | 2019-07-09 | 2020-12-01 | 华中科技大学 | A surface emitting laser based on surface grating |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5987043A (en) * | 1997-11-12 | 1999-11-16 | Opto Power Corp. | Laser diode arrays with offset components |
| US20050254539A1 (en) * | 2004-05-17 | 2005-11-17 | Klimek Daniel E | Staggered array coupler |
| CN103048792A (en) * | 2011-10-11 | 2013-04-17 | 深圳市光峰光电技术有限公司 | Light source system and laser light source |
| CN106329315A (en) * | 2016-11-21 | 2017-01-11 | 长春理工大学 | Surface-emitting distribution feedback laser |
| CN107785776A (en) * | 2017-10-17 | 2018-03-09 | 中国科学院半导体研究所 | Curved tapers photon crystal laser and array, array light source group |
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