CN107785776A - Curved tapers photon crystal laser and array, array light source group - Google Patents
Curved tapers photon crystal laser and array, array light source group Download PDFInfo
- Publication number
- CN107785776A CN107785776A CN201710997431.3A CN201710997431A CN107785776A CN 107785776 A CN107785776 A CN 107785776A CN 201710997431 A CN201710997431 A CN 201710997431A CN 107785776 A CN107785776 A CN 107785776A
- Authority
- CN
- China
- Prior art keywords
- array
- curved
- photon crystal
- laser
- crystal laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Abstract
The invention discloses a kind of curved tapers photon crystal laser and array, array light source group.Wherein, curved tapers photon crystal laser includes：The ridge waveguide part being sequentially connected, curved waveguide part and cone of light amplifier section；Wherein, ridge waveguide part is straight wave guide, and curved waveguide part has a radian, direction flaring of the cone of light amplifier section along light output.By introducing photon crystal structure, regulate and control intracavity modal and realize the narrower vertically and horizontally angle of divergence, simplify optical alignment, compressibility, and by rationally designing waveguiding structure, match the waveguide mode of different piece, the laser output of multi-angle, wide scope can be realized in the case where not needing rotary machine, and add the scope and precision of laser irradiation and scanning, with adjustable, relatively low angular resolution, it is compact-sized, stability is high, and cost is low, is had broad application prospects in the fields such as laser ranging, laser imaging, laser radar.
Description
Technical field
The disclosure belongs to semiconductor photoelectronic device technical field, is related to a kind of curved tapers photon crystal laser and battle array
Row, array light source group.
Background technology
Semiconductor laser is electro-optical efficiency highest light source, has wide covering wavelength band, long lifespan, energy directly
Modulation, small volume, low cost and other advantages.Had a wide range of applications in fields such as laser ranging, laser imaging, optical information storages.
It is ruby laser and CO that early stage, which is used for laser ranging and the light source of laser imaging,2Gas laser, but solid state laser
Compared to semiconductor laser face that volume is big, efficiency is low with gas laser and the shortcomings of poor reliability.And with partly leading
The maturation of body laser manufacturing process, the power output of semiconductor laser are improved constantly, and cost is constantly reduced, promoted partly to lead
Body laser develops rapidly for the laser radar of light source, turns into the focus of laser radar research and development.
In laser radar apparatus, effectively to carry out laser imaging and laser ranging, it is necessary to which light source carries out wide angle, big model
Enclose, high accuracy scanning and irradiation, wherein, scanning range is bigger, can areas imaging it is bigger, the information that can perceive surrounding is more；With
Smaller in the light source angle of divergence of scanning, obtainable data point is more, and imaging precision is higher.Commercial semiconductor lasers at this stage
Horizontal divergence angle is at 10~25 degree, and about 40 degree of vertical divergence angle, detectable range is limited, and angular resolution is poor, often coordinates
A series of compression collimating optical systems could use.In order to increase scanning range, some commercial lasers radar installations are by semiconductor
Laser is placed on rotatable board, by the rotation of board, increases the scanning range of semiconductor laser, but this is notable
The volume, system complexity and unstability of laser radar apparatus are added, also increases its cost.
The content of the invention
(1) technical problems to be solved
Present disclose provides a kind of curved tapers photon crystal laser and array, array light source group, with least portion
Decompose technical problem certainly set forth above.
(2) technical scheme
According to an aspect of this disclosure, there is provided a kind of curved tapers photon crystal laser, including：It is sequentially connected
Ridge waveguide part, curved waveguide part and cone of light amplifier section；Wherein, ridge waveguide part is straight wave guide, curved waveguide part
With a radian, direction flaring of the cone of light amplifier section along light output.
In some embodiments of the present disclosure, the extension of ridge waveguide part, curved waveguide part and cone of light amplifier section
Structure is laminated construction, and the laminated construction includes successively from bottom to top：N-type substrate, N-type limiting layer, layer of photonic crystals are active
Layer, p-type limiting layer, p-type cap rock；The ridge waveguide part being sequentially connected, curved waveguide part and cone of light amplifier section be from
Laminated construction upper surface performs etching what is formed to p-type cap rock, the ridge waveguide part, curved waveguide part and cone of light enlarging section
The part of protrusion is divided into, the part of remaining depression is remaining p-type cap rock after etching.
In some embodiments of the present disclosure, curved tapers photon crystal laser, in addition to：Bottom electrode, it is formed at N-type
The lower section of substrate；Electric insulation layer, on the part of depression；And Top electrode, on the part of protrusion.
In some embodiments of the present disclosure, ridge waveguide part is straight wave guide, and the width of the ridge waveguide part is between 300nm
Between~200 μm；And/or the section of the ridge waveguide includes：Rectangle, trapezoidal or triangle；And/or the width of curved waveguide part
Degree is between 300nm~200 μm, and bending radius is between 50 μm~500 μm, and length is between 50 μm~500 μm；
And/or the initiating terminal width of cone of light amplifier section is between 300nm~50 μm, angular aperture θ1Between 0 °~15 °, incline
Bevel angle θ2Between 0 °~15 °, length is between 50 μm~500 μm.
In some embodiments of the present disclosure, the structure of active layer includes：SQW, quantum wire or quantum dot, active layer
Material be III-V group semi-conductor material or Group II-VI semiconductor material, the gain spectral peak wavelength scope covering of the active layer
Near ultraviolet is to infrared band；And/or the material of electric insulation layer includes：SiO2、SiN4Or Al2O3。
According to another aspect of the disclosure, there is provided a kind of curved tapers photon crystal laser array, including：At least
Any curved tapers photon crystal laser that two disclosure are mentioned.
In some embodiments of the present disclosure, by the length for changing ridge waveguide in each curved tapers photon crystal laser
Degree, the radius and length of curved waveguide part, and the angular aperture of cone of light amplifier section and inclination angle, ensureing different piece
Waveguide mode matching under conditions of, realize different drift angles lateral far field output.
In some embodiments of the present disclosure, the spacing between each curved tapers photon crystal laser is between 300nm
Between~500 μm, spacing of the spacing implication between ridge waveguide part here.
According to the another aspect of the disclosure, there is provided a kind of array light source group, including at least two upper and lower arrangements are curved
Bent taper photon crystal laser array, arranged by displacement spatially and the different of respective curved tapers photon crystal laser
Cloth, to realize that the lateral drift angle in upper and lower at least two photon crystal lasers array far field is interspersed.
In some embodiments of the present disclosure, the number of curved tapers photon crystal laser array is N number of, including：The
One array of source, secondary light source array ..., i-th of array of source ..., n-th array of source；Wherein, N >=2；First light
The lateral drift angle output of luminescence unit includes in the array of source：..., -4 °, 0 °, 4 °, 8 ° ...；Lighted in i-th of array of source
The lateral drift angle output of unit includes：..., (ki- 4) °, ki°, (ki+ 4) °, (ki+ 8) ° ...；Wherein, i=1,2 ..., N, N
For the total number of array；kiFor the drift angle dislocation value of i-th of array of source and previous array of source.
In some embodiments of the present disclosure, the imaging region of array light source group covers -30 ° to 30 ° of scope, and the battle array
The angular resolution of row light source group is better than 2 °.
(3) beneficial effect
It can be seen from the above technical proposal that curved tapers photon crystal laser and array, array that the disclosure provides
Light source group, has the advantages that：
By introducing photon crystal structure, regulation and control intracavity modal realizes the narrower vertically and horizontally angle of divergence, simplifies light
Collimation, compressibility are learned, and by rationally designing waveguiding structure, matches the waveguide mode of different piece, need not revolved
Favourable turn platform in the case of can realize multi-angle, wide scope laser output, and add laser irradiation and scanning scope and
Precision, there is adjustable, relatively low angular resolution, compact-sized, stability is high, and cost is low, laser ranging, laser imaging,
Had broad application prospects in the fields such as laser radar.
Brief description of the drawings
Fig. 1 is the vertical view according to the embodiment of the present disclosure towards the curved tapers photon crystal laser array of laser imaging
Figure.
Fig. 2 is the front view according to the embodiment of the present disclosure towards the array light source group of laser imaging.
Fig. 3 is towards the horizontal far field of the curved tapers photon crystal laser of laser imaging according to the embodiment of the present disclosure
Figure.
Fig. 4 is the vertical far-field according to the embodiment of the present disclosure towards the curved tapers photon crystal laser of laser imaging
Figure.
Fig. 5 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 0 ° of angle.
Fig. 6 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 4 ° of angles.
Fig. 7 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 8 ° of angles.
Fig. 8 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 12 ° of angles.
Fig. 9 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 16 ° of angles.
Figure 10 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 20 ° of angles.
Figure 11 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 24 ° of angles.
Figure 12 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 28 ° of angles.
Fig. 5 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 2 ° of angles.
Fig. 6 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 6 ° of angles.
Fig. 7 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 10 ° of angles.
Fig. 8 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 14 ° of angles.
Fig. 9 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 18 ° of angles.
Figure 10 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 22 ° of angles.
Figure 11 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 26 ° of angles.
Figure 12 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 30 ° of angles.
【Symbol description】
101- bottom electrodes；102-N type substrates；
103-N type limiting layers；104- layer of photonic crystals；
105- active layers；106-P type limiting layers；
107-P type cap rocks；108- electric insulation layers；
109- Top electrodes；
3- ridge waveguide parts；4- curved waveguides part；
5- cone of light amplifier section.
Embodiment
Present disclose provides a kind of curved tapers photon crystal laser and array, array light source group, by introducing photon
Crystal structure, the narrower vertically and horizontally angle of divergence of regulation and control intracavity modal realization, simplifies optical alignment, compressibility, and
By rationally designing waveguiding structure, match the waveguide mode of different piece, can be real in the case where not needing rotary machine
The laser output of existing multi-angle, wide scope, and the scope and precision of laser irradiation and scanning are added, have adjustable, relatively low
Angular resolution, compact-sized, stability is high, and cost is low, has in the fields such as laser ranging, laser imaging, laser radar
Wide application prospect.
For the purpose, technical scheme and advantage of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the disclosure is further described.
The disclosure makes laser emitting direction deviate the certain angle of axial direction by rationally designing and optimizing waveguiding structure
Spend, and change waveguiding structure to realize different angle outgoing, so as to realize that the laser of multi-angle wide scope exports, increase
The irradiation of laser and scanning range.While photonic crystal can regulate and control intracavity modal and realize that horizontal divergence angle is only 4 degree, vertical hair
Dissipate angle and be less than 10 degree, can effectively simplify the complexity of optical system.
In first exemplary embodiment of the disclosure, there is provided a kind of curved tapers photon crystal laser.
Fig. 1 is the vertical view according to the embodiment of the present disclosure towards the curved tapers photon crystal laser array of laser imaging
Figure.Fig. 2 is the front view according to the embodiment of the present disclosure towards the array light source group of laser imaging.
In referring to Figures 1 and 2 shown in some luminescence unit, the curved tapers photon crystal laser of the disclosure, including：
The ridge waveguide part 3 being sequentially connected, curved waveguide part 4 and taper (Taper) light amplification part 5；Wherein, ridge waveguide part 3
For straight wave guide, curved waveguide part has a radian, direction flaring of the cone of light amplifier section along light output.
With reference to Fig. 1 and Fig. 2, the various pieces of the curved tapers photon crystal laser of the disclosure are situated between in detail
Continue.
Shown in reference picture 2, the epitaxial structure of ridge waveguide part 3, curved waveguide part 4 and cone of light amplifier section 5 is folded
Rotating fields, including：N-type substrate 102；Bottom electrode 101, it is formed at the lower surface of N-type substrate 102；N-type limiting layer 103, is formed at
The upper surface of N-type substrate 102；Layer of photonic crystals 104, it is formed on N-type limiting layer 103；Active layer 105, is formed at photon
On crystal layer 104；P-type limiting layer 106, it is formed on active layer 105；And p-type cap rock 107, it is formed at p-type limiting layer
On 106；The ridge waveguide part 3 being sequentially connected, curved waveguide part 4 and Taper light amplification part 5 are from laminated construction
Surface performs etching what is formed to p-type cap rock 107, and the part of protrusion includes：Ridge waveguide part 3, curved waveguide part 4 and taper
Light amplification part 5, the part of depression is the remaining upper surface of p-type cap rock 107 after etching；Electric insulation layer 108, positioned at the portion of depression
/ on；Top electrode 109, on the p-type cap rock 107 in the part of protrusion.
Shown in reference picture 1, the length of ridge waveguide part 3 is d1, length of the length expression ridge waveguide part 3 along y directions
Degree；Curved waveguide part 4 has a radian, and radius corresponding to its arc length is R, the length of the curved waveguide part 4 along v directions
For d2；Direction flaring of the cone of light amplifier section 5 along light output, there is an angular aperture θ1, a tiltangleθ2, wherein, angular aperture
The subtended angle formed for the both sides of the cone of light amplifier section, inclination angle are more inclined one side and the angle of y-axis positive direction, are led to
The trend of the cone of light amplifier section 5 can be determined and size of dehiscing by crossing the two parameters；The cone of light amplifier section 5 is along y
The length in direction is d3。
In the present embodiment, ridge waveguide part 3 is straight wave guide, and the width of ridge waveguide part 3 is between 300nm~200 μm；
The section of the ridge waveguide includes but is not limited to：Rectangle, trapezoidal or triangle.
In the present embodiment, the width of curved waveguide part 4 between 300nm~200 μm, bending radius between 50 μm~
Between 500 μm, length is between 50 μm~500 μm.
In the present embodiment, the initiating terminal width of cone of light amplifier section 5 is between 300nm~50 μm, angular aperture θ1It is situated between
Between 0 ° 15 °, tiltangleθ2Between 0 °~15 °, its length is between 50 μm~500 μm.
In the present embodiment, layer of photonic crystals 104 is common photon crystal structure, but disclosure not limited to this, can also
It is other symmetrical and asymmetrical wave guide structures.
In the present embodiment, the structure that active layer 105 uses includes：SQW, quantum wire or quantum dot, the material used for
III-V group semi-conductor material or Group II-VI semiconductor material, gain spectral peak wavelength scope cover near ultraviolet to infrared band.
In the present embodiment, the material of electric insulation layer 108 includes：SiO2、SiN4Or Al2O3Deng.
It is the extension of the photonic crystal semiconductor laser of 980nm GaAs substrates using launch wavelength in the present embodiment
Piece carries out the making of the curved tapers photon crystal laser.Manufacturing process mainly includes：First, epitaxial wafer is made：Served as a contrast in GaAs
N-type limiting layer, layer of photonic crystals, active layer, p-type limiting layer and p-type cap rock are grown on bottom successively, prepares epitaxial wafer；2nd,
Make ridge waveguide part, curved waveguide part and taper light amplification part：Pass through basic photoetching, inductively coupled plasma
Etching (ICP) technique etches ridge waveguide part, curved waveguide part and taper light amplification part；3rd, make electrode and electricity is exhausted
Edge layer：Deposit layer of silicon dioxide insulating materials on whole epitaxial wafer, then by photoetching and wet etching by injection region table top
On silica etch away, form injection window, finally subtract in p long Ti/Pt/Au materials of looking unfamiliar as front electrode, substrate
Long gold germanium nickel gold material is looked unfamiliar as backplate in n after thin.
The ridge waveguide part 3, curved waveguide part 4 and Taper light amplification part 5, it can unanimously carry out electrical pumping and be formed
Taper lasers, or by electrode 109, made between curved waveguide part 4 and Taper light amplification part 5 electricity every
From area, MOPA (MOPA) structure is formed.
In second exemplary embodiment of the disclosure, there is provided a kind of curved tapers photon crystal laser array,
The curved tapers photonic crystal shown in 2 first embodiments is comprised at least in one curved tapers photon crystal laser array to swash
Light device；By change the length of ridge waveguide part 3 in each curved tapers photon crystal laser, curved waveguide part 4 half
Footpath and length, and the angular aperture of Taper light amplification part 5 and inclination angle, ensureing the waveguide mode matching of different piece
Under the conditions of, realize the lateral far field output of different drift angles.
Spacing between each curved tapers photon crystal laser is identical or different, and the array of formation is with uniform or uneven
Even mode is arranged；Spacing between each luminescence unit is between 300nm~500 μm, here between ridge waveguide
Spacing be defined.
In the present embodiment, there are 17 curved tapers photon crystal lasers in curved tapers photon crystal laser array,
Wherein pointed to from left to right positioned at the 9th middle luminescence unit, its light beam at 0 degree of angle, other 16 luminescence units are mirrored into
It is symmetrically distributed in the luminescence unit both sides, the degree of imaging region covering -30 to 30 degree of range areas.
Fig. 3 is towards the horizontal far field of the curved tapers photon crystal laser of laser imaging according to the embodiment of the present disclosure
Figure.Fig. 4 is the vertical far-field figure according to the embodiment of the present disclosure towards the curved tapers photon crystal laser of laser imaging.
Reference picture 3 and Fig. 4 understand that the curved tapers photon crystal laser array in the present embodiment is by regulating and controlling intracavitary mould
Formula, the horizontal divergence angle of realization is only 4 °, if the value of half-peak breadth in Fig. 3 is shown in 4 °；Vertical divergence angle is less than 10 °, in Fig. 4
The value of half-peak breadth is shown in 9.2 °.
So from the foregoing, it will be observed that the angle essence that a curved tapers photon crystal laser array can be realized in the horizontal direction
Minimum 4 ° are spent, in order to realize that the angle of lower precision regulates and controls, present disclose provides including shown in the 3rd embodiment
The photon crystal laser of multiple upper and lower arrangement curved tapers photon crystal laser arrays, by by each curved tapers light
Displacement spatially and the different arrangements of respective curved tapers photon crystal laser are carried out in sub- crystal laser array, with reality
Now the lateral drift angle in far field of two photon crystal laser arrays is interspersed up and down, and then realizes that the angle of smaller precision is defeated
Go out regulation.
In the 3rd exemplary embodiment of the disclosure, there is provided including two curved tapers photon crystal laser battle arrays
The array light source group of row, the two upper and lower arrangements of curved tapers photon crystal laser array, by displacement spatially and respectively
From the difference arrangement of curved tapers photon crystal laser, to realize upper and lower two curved tapers photon crystal laser array
The lateral drift angle in far field be interspersed, and then realize the angular resolution regulation of smaller precision.
Shown in reference picture 2, in the present embodiment, upper and lower two curved tapers photon crystal lasers array is corresponding to arrange,
The array of source of top shown in Fig. 2 is referred to as the first array of source, the array of source of lower section is referred to as secondary light source array, its
In, in the first array of source, including 15 curved tapers photon crystal lasers, the luminescence unit of first array of source
Lateral drift angle, which exports, is：0 °, 4 °, 8 ° ..., 28 °；In secondary light source array, including 16 curved tapers photor crystal lasers
Device, the lateral drift angle output of the luminescence unit of the secondary light source array are：2 °, 6 °, 10 ° ..., 30 °.The two curved tapers
There is a drift angle dislocation value in the lateral drift angle output of photon crystal laser array, be 2 ° in the present embodiment, it is achieved thereby that
Lower angular resolution.
Thus, to realize lower angular resolution, photonic crystal arrays light source can be expanded to multiple arrays.According to above-mentioned class
As mode, in the first array of source luminescence unit lateral drift angle output include：0 °, 4 °, 8 ° ...；In i-th of light source
The lateral drift angle output of luminescence unit includes in array：ki°, (ki+ 4) °, (ki+ 8) ° ...；Wherein, i=1,2 ..., N, N be
The total number of array；Ki is the drift angle dislocation value of i-th of array of source and previous array of source, as long as meeting actual device
Parameter and demand, the match selection of corresponding drift angle dislocation value and array number can be carried out；In addition, with reference to second implementation
Situation in example, the output angle can also be negative angle, and the arrangement of luminescence unit is carried out according to the form of specular distribution
It can realize.
Fig. 5 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 0 ° of angle.Shown in reference picture 5A, in the present embodiment, far field output facula is positioned at level
At the angle of 0 ° of position, the wherein length of ridge waveguide part is 800nm, no curved waveguide part, and the length of taper light amplification part is
400nm, angular aperture are 2 °, no inclination angle.
Fig. 6 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 4 ° of angles.Shown in reference picture 6A, in the present embodiment, far field output facula is positioned at level
At the angle of 4 ° of position, the wherein length of ridge waveguide part is 500nm, and the radius of curved waveguide part is 1mm, taper light amplification portion
It is 400nm to divide length, and angular aperture is 2 °, and inclination angle is 1 °.
Fig. 7 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 8 ° of angles.Shown in reference picture 7A, in the present embodiment, far field output facula is positioned at level
At the angle of 8 ° of position, the wherein length of ridge waveguide part is 300nm, and the radius of curved waveguide part is 1mm, taper light amplification portion
The length divided is 400nm, and angular aperture is 2 °, and inclination angle is 2.5 °.
Fig. 8 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 12 ° of angles.Shown in reference picture 8A, in the present embodiment, far field output facula is located at water
Prosposition is put at 12 ° of angles, and the wherein length of ridge waveguide part is 200nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 2 °, and inclination angle is 3 °.
Fig. 9 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 16 ° of angles.Shown in reference picture 9A, in the present embodiment, far field output facula is located at water
Prosposition is put at 16 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 2 °, and inclination angle is 3.5 °.
Figure 10 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 20 ° of angles.Shown in reference picture 10A, in the present embodiment, far field output facula is located at water
Prosposition is put at 20 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 2 °, and inclination angle is 4.5 °.
Figure 11 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 24 ° of angles.Shown in reference picture 11A, in the present embodiment, far field output facula is located at water
Prosposition is put at 24 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 2 °, and inclination angle is 5.5 °.
Figure 12 A are the far field according to single curved tapers photon crystal laser in the array of source of the embodiment of the present disclosure first
Output facula is horizontally situated schematic diagram at 28 ° of angles.Shown in reference picture 12A, in the present embodiment, far field output facula is located at water
Prosposition is put at 28 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 2 °, and inclination angle is 6.5 °.
Fig. 5 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 2 ° of angles.Shown in reference picture 5B, in the present embodiment, far field output facula is positioned at level
At the angle of 2 ° of position, the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification portion
The length divided is 400nm, and angular aperture is 1.5 °, and inclination angle is 0.5 °.
Fig. 6 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 6 ° of angles.Shown in reference picture 6B, in the present embodiment, far field output facula is positioned at level
At the angle of 6 ° of position, the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification portion
The length divided is 400nm, and angular aperture is 1.5 °, and inclination angle is 1.5 °.
Fig. 7 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 10 ° of angles.Shown in reference picture 7B, in the present embodiment, far field output facula is located at water
Prosposition is put at 10 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 1.5 °, and inclination angle is 2.5 °.
Fig. 8 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 14 ° of angles.Shown in reference picture 8B, in the present embodiment, far field output facula is located at water
Prosposition is put at 14 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 1.5 °, and inclination angle is 3.5 °.
Fig. 9 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 18 ° of angles.Shown in reference picture 9B, in the present embodiment, far field output facula is located at water
Prosposition is put at 18 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 1.5 °, and inclination angle is 4.5 °.
Figure 10 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 22 ° of angles.Shown in reference picture 10B, in the present embodiment, far field output facula is located at water
Prosposition is put at 22 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 1.5 °, and inclination angle is 5 °.
Figure 11 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 26 ° of angles.Shown in reference picture 11B, in the present embodiment, far field output facula is located at water
Prosposition is put at 26 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 1.5 °, and inclination angle is 6 °.
Figure 12 B are the far field according to single curved tapers photon crystal laser in embodiment of the present disclosure secondary light source array
Output facula is horizontally situated schematic diagram at 30 ° of angles.Shown in reference picture 12B, in the present embodiment, far field output facula is located at water
Prosposition is put at 30 ° of angles, and the wherein length of ridge waveguide part is 100nm, and the radius of curved waveguide part is 1mm, taper light amplification
Partial length is 400nm, and angular aperture is 1.5 °, and inclination angle is 6.5 °.
In summary, present disclose provides a kind of curved tapers photon crystal laser and array, array light source group, pass through
Photon crystal structure is introduced, regulation and control intracavity modal realizes the narrower vertically and horizontally angle of divergence, simplifies optical alignment, compression system
System, and by rationally designing waveguiding structure, match the waveguide mode of different piece, in the case where not needing rotary machine
The laser output of multi-angle, wide scope can be realized, and adds the scope and precision of laser irradiation and scanning, is had adjustable
, relatively low angular resolution, compact-sized, stability is high, and cost is low, in fields such as laser ranging, laser imaging, laser radars
In have broad application prospects.
It should be noted that the direction term mentioned in embodiment, such as " on ", " under ", "front", "rear", "left", "right"
Deng, be only refer to the attached drawing direction, be not used for limiting the protection domain of the disclosure.Through accompanying drawing, identical element is by identical
Or similar reference represents.When understanding of this disclosure may be caused to cause to obscure, conventional structure or structure will be omitted
Make.And the shape and size of each part do not reflect actual size and ratio in figure, and only illustrate the content of the embodiment of the present disclosure.
In addition, in the claims, any reference symbol between bracket should not be configured to limitations on claims.
Unless there are known entitled phase otherwise meaning, the numerical parameter in this specification and appended claims are approximations, energy
Enough required characteristic changings according to as obtained by content of this disclosure.Specifically, it is all to be used in specification and claim
The numeral of the middle content for representing composition, reaction condition etc., it is thus understood that repaiied by the term of " about " in all situations
Decorations.Generally, the implication of its expression refers to include by specific quantity ± 10% change in certain embodiments, at some
± 5% change in embodiment, ± 1% change in certain embodiments, in certain embodiments ± 0.5% change.
Furthermore word "comprising" or " comprising " do not exclude the presence of element or step not listed in the claims.Positioned at member
Word "a" or "an" before part does not exclude the presence of multiple such elements.
Specification and the word of ordinal number such as " first ", " second ", " the 3rd " etc. used in claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Order in sequence or manufacture method, the use of those ordinal numbers are only used for enabling the element with certain name and another tool
The element for having identical name can make clear differentiation.
Similarly, it will be appreciated that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description to the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the method for the disclosure should be construed to reflect following intention：I.e. required guarantor
The disclosure of shield requires features more more than the feature being expressly recited in each claim.It is more precisely, such as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following embodiment are expressly incorporated in the embodiment, wherein each claim is in itself
Separate embodiments all as the disclosure.
Particular embodiments described above, the purpose, technical scheme and beneficial effect of the disclosure are carried out further in detail
Describe in detail bright, should be understood that the specific embodiment that the foregoing is only the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution and improvements done etc., the guarantor of the disclosure should be included in
Within the scope of shield.
Claims (11)
1. a kind of curved tapers photon crystal laser, including：
The ridge waveguide part being sequentially connected, curved waveguide part and cone of light amplifier section；
Wherein, ridge waveguide part is straight wave guide, and curved waveguide part has a radian, and cone of light amplifier section is along light output
Direction flaring.
2. curved tapers photon crystal laser according to claim 1, wherein, the ridge waveguide part, curved waveguide
The epitaxial structure of part and cone of light amplifier section is laminated construction, and the laminated construction includes successively from bottom to top：N-type substrate, N
Type limiting layer, layer of photonic crystals, active layer, p-type limiting layer, p-type cap rock；The ridge waveguide part being sequentially connected, bending wave
Lead part and cone of light amplifier section performs etching to be formed from laminated construction upper surface to p-type cap rock, the ridge waveguide portion
Point, curved waveguide part and cone of light amplifier section turn into the part of protrusion, part of remaining depression is remaining p-type after etching
Cap rock.
3. curved tapers photon crystal laser according to claim 2, in addition to：
Bottom electrode, it is formed at the lower section of N-type substrate；
Electric insulation layer, on the part of depression；And
Top electrode, on the part of protrusion.
4. curved tapers photon crystal laser according to claim 1, wherein：
The ridge waveguide part is straight wave guide, and the width of the ridge waveguide part is between 300nm~200 μm；And/or the ridge ripple
The section led includes：Rectangle, trapezoidal or triangle；And/or
For the width of the curved waveguide part between 300nm~200 μm, bending radius is long between 50 μm~500 μm
Degree is between 50 μm~500 μm；And/or
The initiating terminal width of the cone of light amplifier section is between 300nm~50 μm, angular aperture θ1Between 0 °~15 °,
Tiltangleθ2Between 0 °~15 °, length is between 50 μm~500 μm.
5. curved tapers photon crystal laser according to claim 2, wherein,
The structure of the active layer includes：SQW, quantum wire or quantum dot, the material of active layer is Group III-V semiconductor material
Material or Group II-VI semiconductor material, the gain spectral peak wavelength scope of the active layer cover near ultraviolet to infrared band；And/or
The material of the electric insulation layer includes：SiO2、SiN4Or Al2O3。
6. a kind of curved tapers photon crystal laser array, including：
Curved tapers photon crystal laser any one of at least two claims 1 to 5.
7. curved tapers photon crystal laser array according to claim 6, by changing each curved tapers
The length of ridge waveguide in photon crystal laser, the radius and length of curved waveguide part, and cone of light amplifier section are opened
Bicker and inclination angle, under conditions of the waveguide mode matching of different piece is ensured, realize the lateral far field output of different drift angles.
8. curved tapers photon crystal laser array according to claim 6, wherein, each curved tapers photon
Spacing between crystal laser is between 300nm~500 μm, between spacing implication here is between ridge waveguide part
Away from.
9. a kind of array light source group, include the curved tapers photonic crystal as claimed in claim 6 of at least two upper and lower arrangements
Laser array, arranged by displacement spatially and the different of respective curved tapers photon crystal laser, it is upper and lower to realize
At least two lateral drift angle in photon crystal laser array far fields are interspersed.
10. array light source group according to claim 9, wherein, of the curved tapers photon crystal laser array
Number is N number of, including：First array of source, secondary light source array ..., i-th of array of source ..., n-th array of source；Its
In, N >=2；
The lateral drift angle output of luminescence unit includes in first array of source：..., -4 °, 0 °, 4 °, 8 ° ...；At i-th
The lateral drift angle output of luminescence unit includes in array of source：..., (ki- 4) °, ki°, (ki+ 4) °, (ki+ 8) ° ...；Wherein,
I=1,2 ..., N, N be array total number；kiFor the drift angle dislocation value of i-th of array of source and previous array of source.
11. the array light source group according to claim 9 or 10, the imaging region of the array light source group covers -30 ° extremely
30 ° of scope, and the angular resolution of the array light source group is better than 2 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710997431.3A CN107785776B (en) | 2017-10-17 | 2017-10-17 | Curved conical photonic crystal laser, array and array light source set |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710997431.3A CN107785776B (en) | 2017-10-17 | 2017-10-17 | Curved conical photonic crystal laser, array and array light source set |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107785776A true CN107785776A (en) | 2018-03-09 |
| CN107785776B CN107785776B (en) | 2020-03-17 |
Family
ID=61434870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710997431.3A Active CN107785776B (en) | 2017-10-17 | 2017-10-17 | Curved conical photonic crystal laser, array and array light source set |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107785776B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019075631A1 (en) * | 2017-10-17 | 2019-04-25 | 中国科学院半导体研究所 | Curved conical photonic crystal laser device, array, and array light source group |
| CN109861079A (en) * | 2019-01-08 | 2019-06-07 | 中国科学院半导体研究所 | One-dimensional radar scanning emitter and preparation method based on micro-structure laser |
| US10345519B1 (en) * | 2018-04-11 | 2019-07-09 | Microsoft Technology Licensing, Llc | Integrated optical beam steering system |
| CN111146691A (en) * | 2020-01-19 | 2020-05-12 | 长春理工大学 | Surface emitting laser array |
| CN113258447A (en) * | 2021-05-18 | 2021-08-13 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser array and preparation method thereof |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1560694A (en) * | 2004-03-05 | 2005-01-05 | 长春理工大学 | Master vibration light amplifier |
| JP2005277219A (en) * | 2004-03-25 | 2005-10-06 | Kyoto Univ | Photonic crystal laser |
| CN101118364A (en) * | 2007-09-12 | 2008-02-06 | 长春理工大学 | Main vibrating light amplifier with isolation region |
| CN101471534A (en) * | 2007-12-28 | 2009-07-01 | 中国科学院半导体研究所 | Method for making high brightness semiconductor conical laser/amplifier |
| CN102055135A (en) * | 2009-11-04 | 2011-05-11 | 中国科学院半导体研究所 | Tapered photonic crystal quantum cascade laser and manufacture method thereof |
| WO2012035620A1 (en) * | 2010-09-14 | 2012-03-22 | キヤノン株式会社 | Photonic-crystal surface-emitting laser, laser array using said laser, and image forming device using said laser array |
| CN102545056A (en) * | 2012-02-02 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Surface-emitting terahertz quantum cascade laser and manufacturing method thereof |
| CN103326244A (en) * | 2013-06-19 | 2013-09-25 | 中国科学院半导体研究所 | Photonic crystal laser array with high brightness and horizontal far-field single distribution |
| CN103424810A (en) * | 2012-05-14 | 2013-12-04 | 鸿富锦精密工业（深圳）有限公司 | Optical waveguide directional coupler |
| CN103904556A (en) * | 2014-03-25 | 2014-07-02 | 中国科学院半导体研究所 | Oblique side wall oblique waveguide photonic crystal semiconductor laser device |
| CN104617486A (en) * | 2014-11-04 | 2015-05-13 | 中国科学院半导体研究所 | Monolithic integrated multi-wavelength semiconductor mode-locked laser |
| CN104966984A (en) * | 2015-06-29 | 2015-10-07 | 中国科学院半导体研究所 | Device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser |
| CN105098582A (en) * | 2015-09-16 | 2015-11-25 | 中国科学院半导体研究所 | Quasi three-dimensional photonic crystal narrow linewidth laser |
| CN105305229A (en) * | 2015-12-04 | 2016-02-03 | 武汉邮电科学研究院 | High coupling efficiency electric injection integration silicon-based laser |
| CN105449515A (en) * | 2015-12-30 | 2016-03-30 | 中国科学院半导体研究所 | Semiconductor ultra-short pulse high repetition frequency laser |
| CN106159672A (en) * | 2016-08-30 | 2016-11-23 | 中国科学院半导体研究所 | Based on the narrow line wide cavity laser structure that optical fiber lens and grating are integrated |
| CN205881934U (en) * | 2016-06-30 | 2017-01-11 | 武汉光安伦光电技术有限公司 | Polarization superradiance emitting diode chip that has nothing to do |
| CN107017555A (en) * | 2010-01-08 | 2017-08-04 | Ii－Vi 激光企业有限责任公司 | The laser system exported with high linearity |
-
2017
- 2017-10-17 CN CN201710997431.3A patent/CN107785776B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1560694A (en) * | 2004-03-05 | 2005-01-05 | 长春理工大学 | Master vibration light amplifier |
| JP2005277219A (en) * | 2004-03-25 | 2005-10-06 | Kyoto Univ | Photonic crystal laser |
| CN101118364A (en) * | 2007-09-12 | 2008-02-06 | 长春理工大学 | Main vibrating light amplifier with isolation region |
| CN101471534A (en) * | 2007-12-28 | 2009-07-01 | 中国科学院半导体研究所 | Method for making high brightness semiconductor conical laser/amplifier |
| CN102055135A (en) * | 2009-11-04 | 2011-05-11 | 中国科学院半导体研究所 | Tapered photonic crystal quantum cascade laser and manufacture method thereof |
| CN107017555A (en) * | 2010-01-08 | 2017-08-04 | Ii－Vi 激光企业有限责任公司 | The laser system exported with high linearity |
| WO2012035620A1 (en) * | 2010-09-14 | 2012-03-22 | キヤノン株式会社 | Photonic-crystal surface-emitting laser, laser array using said laser, and image forming device using said laser array |
| CN102545056A (en) * | 2012-02-02 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Surface-emitting terahertz quantum cascade laser and manufacturing method thereof |
| CN103424810A (en) * | 2012-05-14 | 2013-12-04 | 鸿富锦精密工业（深圳）有限公司 | Optical waveguide directional coupler |
| CN103326244A (en) * | 2013-06-19 | 2013-09-25 | 中国科学院半导体研究所 | Photonic crystal laser array with high brightness and horizontal far-field single distribution |
| CN103904556A (en) * | 2014-03-25 | 2014-07-02 | 中国科学院半导体研究所 | Oblique side wall oblique waveguide photonic crystal semiconductor laser device |
| CN104617486A (en) * | 2014-11-04 | 2015-05-13 | 中国科学院半导体研究所 | Monolithic integrated multi-wavelength semiconductor mode-locked laser |
| CN104966984A (en) * | 2015-06-29 | 2015-10-07 | 中国科学院半导体研究所 | Device for directly doubling frequency of locking mold photonic crystal semiconductor laser to generate low wave length laser |
| CN105098582A (en) * | 2015-09-16 | 2015-11-25 | 中国科学院半导体研究所 | Quasi three-dimensional photonic crystal narrow linewidth laser |
| CN105305229A (en) * | 2015-12-04 | 2016-02-03 | 武汉邮电科学研究院 | High coupling efficiency electric injection integration silicon-based laser |
| CN105449515A (en) * | 2015-12-30 | 2016-03-30 | 中国科学院半导体研究所 | Semiconductor ultra-short pulse high repetition frequency laser |
| CN205881934U (en) * | 2016-06-30 | 2017-01-11 | 武汉光安伦光电技术有限公司 | Polarization superradiance emitting diode chip that has nothing to do |
| CN106159672A (en) * | 2016-08-30 | 2016-11-23 | 中国科学院半导体研究所 | Based on the narrow line wide cavity laser structure that optical fiber lens and grating are integrated |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019075631A1 (en) * | 2017-10-17 | 2019-04-25 | 中国科学院半导体研究所 | Curved conical photonic crystal laser device, array, and array light source group |
| US10345519B1 (en) * | 2018-04-11 | 2019-07-09 | Microsoft Technology Licensing, Llc | Integrated optical beam steering system |
| CN111954989A (en) * | 2018-04-11 | 2020-11-17 | 微软技术许可有限责任公司 | Integrated beam steering system |
| CN109861079A (en) * | 2019-01-08 | 2019-06-07 | 中国科学院半导体研究所 | One-dimensional radar scanning emitter and preparation method based on micro-structure laser |
| CN111146691A (en) * | 2020-01-19 | 2020-05-12 | 长春理工大学 | Surface emitting laser array |
| CN111146691B (en) * | 2020-01-19 | 2021-08-06 | 长春理工大学 | Surface emitting laser array |
| CN113258447A (en) * | 2021-05-18 | 2021-08-13 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser array and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107785776B (en) | 2020-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107785776A (en) | Curved tapers photon crystal laser and array, array light source group | |
| CN105191029B (en) | Two-dimensional photonic crystal surface-emitting laser | |
| TW202007031A (en) | Light-emitting device | |
| CN109155502B (en) | High brightness coherent multijunction diode laser | |
| JP2014236127A (en) | Two-dimensional photonic crystal surface-emitting laser | |
| JP2004200649A (en) | Vertical-cavity surface-emitting laser and method of manufacturing the same | |
| CN113196598B (en) | Light emitting element, method for manufacturing light emitting element, and method for designing phase modulation layer | |
| JP2008311625A (en) | Surface emitting laser element | |
| CN104319627B (en) | Second order grating is concerned with vertical-cavity-face emitting semiconductor laser | |
| CN105680319B (en) | High brightness semiconductor laser based on modal gain loss regulation and control | |
| CN103825194B (en) | Single-mode photon crystal edge-emission semiconductor laser | |
| CN108054633B (en) | Single-mode surface emitting OAM laser | |
| US8526480B2 (en) | Semiconductor laser device | |
| CN108631152A (en) | Vcsel and Optical devices including it | |
| CN107742824A (en) | A kind of vertical-cavity-face emitting semiconductor laser and preparation method thereof | |
| CN104917052A (en) | Variable-period tilted grating laser and preparation method thereof | |
| CN216529834U (en) | Topological cavity surface emitting laser, monolithic integrated laser array comprising same and electronic equipment | |
| US8964796B2 (en) | Structure for electron-beam pumped edge-emitting device and methods for producing same | |
| CN100349340C (en) | 2.5-dimensional photon crystal-face transmitting laser | |
| WO2020047828A1 (en) | Tunnel junction photonic crystal laser with narrow vertical far-field divergence angle | |
| JP6581691B2 (en) | Two-dimensional photonic crystal surface emitting laser | |
| CN102201648B (en) | Band-edge surface-emitting laser for FP (Fabry-Perot) cavity enhanced electrolysis photonic crystal | |
| CN109038219B (en) | Tunnel junction photonic crystal laser with narrow vertical far field divergence angle | |
| CN105529615B (en) | A kind of semiconductor laser and preparation method thereof | |
| CN109586146B (en) | A kind of THz wave generator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |