CN1560694A - Master vibration light amplifier - Google Patents
Master vibration light amplifier Download PDFInfo
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- CN1560694A CN1560694A CNA2004100061800A CN200410006180A CN1560694A CN 1560694 A CN1560694 A CN 1560694A CN A2004100061800 A CNA2004100061800 A CN A2004100061800A CN 200410006180 A CN200410006180 A CN 200410006180A CN 1560694 A CN1560694 A CN 1560694A
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- light amplifier
- ridged
- main vibrating
- image intensifer
- amplifier according
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Abstract
The invention is a master oscillator light amplifier belonging to semi-conductor photoelectron technology field. The current technologies in the field: the structure is complex, difficulty, or the beam quality of the device is bad, and the output power is low. The master oscillator light amplifier is integrated by coupling a semicircle cavity laser master oscillator light source and the wave-guide and cone semi-conductor light amplifier single chip. It can be applied to semi-conductor laser source field with big power and near diffraction limit.
Description
Technical field
The invention belongs to high-power, the near diffraction limit semiconductor laser light resource technical field in the field of semiconductor photoelectron technique.
Background technology
Main vibrating light amplifier obtains the high power light beam output that beam quality is similar to the main laser instrument that shakes by the light output of amplifying the main laser instrument that shakes, be a kind of important channel that makes high power, nearly diffraction limit semiconductor laser light resource, main vibrating light amplifier and relevant device relevant with the present invention in known technology have:
1, shake semiconductor laser and the single chip integrated main vibrating light amplifier of taper image intensifer of straight chamber ridged waveguide structure master, this is a kind of common, conventional device, such main vibrating light amplifier forms a common chamber by main semiconductor laser and the taper image intensifer of shaking.
2, main shake semiconductor laser and the single chip integrated main vibrating light amplifier of taper image intensifer of distributed feed-back or distribution bragg feedback, the ELECTRONICS LETTERS the 28th that published on October 8th, 1992 rolls up the 2011st～2013 page of the 21st phase this is introduced, and such main vibrating light amplifier mainly is by meticulous grating and integrated the forming of taper image intensifer monolithic.
3, annular cavity laser, the Appl.Phys.Lett.36 (10) that on May 15th, 1980 published introduces this for the 801st～803 page, and the resonator cavity of laser instrument is an annular, also can be with semi-circular frame mode work, simple in structure, make easily, can realize good zlasing mode output.
Summary of the invention
There are some shortcomings in above-mentioned technology, need work in the chamber altogether with image intensifer as the known technology one main laser instrument that shakes, cause the back-propagating power of amplifier area to increase, lowered the electro-optical efficiency of entire device, simultaneously, laser instrument has reduced the beam quality of image intensifer output to the influence of image intensifer because the master shakes, and the effective output of device is reduced.Though known technology two has overcome the shortcoming of known technology one,, its making needs complicated grating to scribe the secondary epitaxy growth technique of technology and material, cost of manufacture height, low, the poor repeatability of yield rate.And that the ring cavity technology has is simple in structure, make easily, the output beam quality advantages of higher, but output power is less.In order to overcome the shortcoming of above-mentioned technology, the advantage of performance relevant technologies, produce simple in structure, the manufacture craft difficulty is low, avoid the main influence of semiconductor laser of shaking to image intensifer, guarantee output mode quality, stability, reliability and the yield rate of laser simultaneously, we have invented the present invention's main vibrating light amplifier.
The present invention is achieved in that it shakes light source by coupled waveguide and integrated the forming of tapered semiconductor image intensifer monolithic by the half-ring laser master.
Technique scheme combines the advantage of known technology, has overcome the shortcoming of known technology simultaneously.In the present invention, the half-ring laser master who is adopted shake light source compare with grating have simple in structure, make to be easy to characteristics, still has single chip integrated structure, and, three parts are relatively independent, and the half-ring laser master light source that shakes is connected by coupled waveguide with the tapered semiconductor image intensifer, the counter productive of having avoided the work of common chamber to produce, can realize and the light beam output of known technology two same quality, if can export with the basic mode pattern.
Description of drawings
Accompanying drawing is the present invention's a main vibrating light amplifier structural representation.
Embodiment
See accompanying drawing, the present invention's main vibrating light amplifier has adopted the monolithic integrated structure that light source 1, coupled waveguide 2 and tapered semiconductor image intensifer 3 form that shakes by the half-ring laser master.Shake light source 1 of half-ring laser master adopts ridged waveguide structure, by being that 2～4 micron wide semicircle ridged bar 4 realize this ridged waveguide structures from the material epitaxy surface corrosion to be made into width near the luminescent layer of material with caustic solution; The shake optical reflectivity of resonant-cavity surface 8 of light source 1 of half-ring laser master is controlled at 30%～100% by film plating process.The same ridged waveguide structures that adopt of coupled waveguide 2 are by being that 2～4 micron ridged bar 5 realize this ridged waveguide structures from the material epitaxy surface corrosion to be made into width near the luminescent layer of material with caustic solution.Centre distance between one end of ridged bar 5 and semicircle ridged bar 4 is controlled at 0～2 micron.Tapered semiconductor image intensifer 3 adopts non-index guide structure waveguiding structure, is formed light amplification district 6 by the dielectric film current barrier layer on the epitaxial surface and realizes this non-index guide structure waveguiding structure; The optical reflectivity of the output cavity face 9 of tapered semiconductor image intensifer 3 is controlled at below 1% with film plating process.Its working method is as follows: half-ring laser master master that light source 1 the produces basic mode laser generation of shaking of shaking, enter the light amplification district 6 of tapered semiconductor image intensifer 3 by the coupling output of coupled waveguide 2, the basic mode laser that enters the light amplification district under certain gain condition obtains non-distortion power and amplifies, and obtains the basic mode laser output of high power, high light beam quality at last at output cavity face 9.
Illustrate the present invention's main vibrating light amplifier below, as shown in drawings, main vibrating light amplifier is formed monolithic integrated structure by shake light source 1, coupled waveguide 2 and tapered semiconductor image intensifer 3 of half-ring laser master.Material selection a slice optical maser wavelength is the GaAs/AlGaAs laser instrument epitaxial wafer of 850 nanometers.Shake light source 1 of half-ring laser master adopts ridged waveguide structure, is 2 micron semicircle ridged bars 4 from the material epitaxy surface corrosion to being made into width near the luminescent layer of material with caustic solution, its radius is 100 microns, and the half-ring laser master shakes the optical reflectivity of two resonant-cavity surfaces 8 of light source 1 by the SiO of 8 pairs 1/4th optical thicknesses of film plating process evaporation
2/ TiO
2High-reflecting film reaches more than 90% the optical reflectivity of resonant-cavity surface 8.The coupled waveguide 2 same ridged waveguide structures that adopt, is 2 micron ridged bar 5 from the material epitaxy surface corrosion to be made into width near the luminescent layer of material with caustic solution, length is 50 microns, and the centre distance between the end of ridged bar 5 and semicircle ridged bar 4 is controlled at 1 micron.Tapered semiconductor image intensifer 3 adopts non-index guide structure waveguiding structure, by the Si on the epitaxial surface
3N
4The dielectric film current barrier layer forms light amplification district 6, and subtended angle is 6 degree, and length is 2 millimeters; The optical reflectivity of the output cavity face 9 of tapered semiconductor image intensifer 3 film plating process evaporation TiO
2/ SiO
2Anti-reflection film is controlled at below 1% the residual reflectivity of output cavity face 9.Its working method is as follows: half-ring laser master light source 1 produces basic mode under injection current excitation the master laser generation of shaking of shaking, enter the light amplification district 6 of tapered semiconductor image intensifer 3 by the coupling output of coupled waveguide 2, light amplification district 6 produces certain gain under the injection current excitation makes the basic mode laser that enters light amplification district 6 obtain non-distortion power amplification, obtains the basic mode laser output of high power, high light beam quality at last at output cavity face 9.
Introduce the present invention's main vibrating light amplifier below from the manufacturing process of device.Referring to accompanying drawing, select a slice GaAs/AlGaAs laser instrument epitaxial wafer for use, at first adopting the vapour deposition process layer thickness of growing on the surface of epitaxial wafer is the Si of 120 nanometers
3N
4Use the method for photoetching then, adopt the AZ5214 photoresist to form the photoresist mask pattern, the shake position in light amplification district 6 of position, tapered semiconductor image intensifer 3 of ridged bar 5 of position, coupled waveguide 2 of semicircle ridged bar 4 of light source 1 and the major part in current blocking district 7 of half-ring laser master is the photoresist reserved area, 5 microns wide zones, the outside along the position of semicircle ridged bar 4, ridged bar 5 are that photoresist is removed the district, to form the raceway groove corrosion region of ridge waveguide.The width of the mask lithography adhesive tape of semicircle ridged bar 4, ridged bar 5 is 2 microns, and the radius of the mask lithography adhesive tape of semicircle ridged bar 4 is 100 microns, and the width of ridged bar 5 mask lithography adhesive tape is that 2 microns, length are 50 microns.Earlier with SF
6For the reactive ion etching method of reacting gas erodes the Si that photoresist is not protected part
3N
4, then with CCl
4, O
2For the epitaxial material of the protection part of method corrosion of the reactive ion etching of reacting gas to 0.15 micron place more than the luminescent layer.Afterwards, adopt O
2Plasma method removes the residual photoresist on the epitaxial wafer, adopts SF
6Plasma method erodes Si
3N
4Etching mask, the sheet sub-surface after corrosion is the Si of 120 nanometers with the vapour deposition process deposit thickness again
3N
4Film is made current barrier layer.Method with photoetching forms AZ5214 photoresist mask pattern once more, and semicircle ridged bar 4, ridged bar 5,6 regions, light amplification district are window region, and all the other zones are the photoresist mask regions, and with SF
6For the reactive ion etching method of reacting gas erodes the Si that photoresist is not protected part
3N
4, form electric current and inject window.The length of tapered semiconductor image intensifer 3 is 2 millimeters, and tapering is 6 degree.Use O
2After plasma method removes residual photoresist on the epitaxial wafer, adopt the method for evaporation or sputter to form p-type ohmic contact layer (Au/Zn/Au or Ti/Pt/Au), the substrate surface mechanical reduction is to the 100-150 micron, aluminum oxide polishing powder polishing with the 1-3 micron granularity, after the cleaning, method with evaporation or sputter forms n-type ohmic contact layer (AuGe/Ni/Au), and alloy was finished the electrode making of device in 3 minutes under the 420 degree hydrogen atmospheres.Then, on chip of laser cleavage machine, press face position, chamber shown in the drawings cleavage chip, and adopt optical coating system to be coated with the multilayer high-reflecting film of reflectivity more than 90%, on output cavity face 9, be coated with reflectivity and be lower than 0.5% anti-reflection film at resonant-cavity surface 8.
Claims (7)
1, a kind of main vibrating light amplifier is characterized in that, it shakes light source (1) by coupled waveguide (2) and integrated the forming of tapered semiconductor image intensifer (3) monolithic by the half-ring laser master.
2, main vibrating light amplifier according to claim 1 is characterized in that, the half-ring laser master shakes light source (1) employing by the formed ridged waveguide structure of semicircle ridged bar (4).
3, main vibrating light amplifier according to claim 1 is characterized in that, the half-ring laser master shakes the optical reflectivity of two resonant-cavity surfaces (8) of light source (1) in the 30%-100% scope.
4, main vibrating light amplifier according to claim 1 is characterized in that, coupled waveguide (2) adopts by the formed ridged waveguide structure of ridged bar (5).
5, main vibrating light amplifier according to claim 1 is characterized in that, ridged bar (5) wherein is controlled in the 0-2 micrometer range with the centre distance of an end of semicircle ridged bar (4).
6, main vibrating light amplifier according to claim 1 is characterized in that, tapered semiconductor image intensifer (3) adopts by light amplification district (6) formed non-refractive index waveguiding structure.
7, main vibrating light amplifier according to claim 1 is characterized in that, the optical reflectivity of the output cavity face (9) of tapered semiconductor image intensifer (3) is smaller or equal to 1%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100061800A CN1560694A (en) | 2004-03-05 | 2004-03-05 | Master vibration light amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100061800A CN1560694A (en) | 2004-03-05 | 2004-03-05 | Master vibration light amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1560694A true CN1560694A (en) | 2005-01-05 |
Family
ID=34439731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100061800A Pending CN1560694A (en) | 2004-03-05 | 2004-03-05 | Master vibration light amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1560694A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013629A (en) * | 2010-11-10 | 2011-04-13 | 长春理工大学 | High-Q value semiconductor laser based on multi-ring coupling structure |
| CN107785776A (en) * | 2017-10-17 | 2018-03-09 | 中国科学院半导体研究所 | Curved tapers photon crystal laser and array, array light source group |
-
2004
- 2004-03-05 CN CNA2004100061800A patent/CN1560694A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013629A (en) * | 2010-11-10 | 2011-04-13 | 长春理工大学 | High-Q value semiconductor laser based on multi-ring coupling structure |
| CN102013629B (en) * | 2010-11-10 | 2013-04-10 | 长春理工大学 | High-Q value semiconductor laser based on multi-ring coupling structure |
| CN107785776A (en) * | 2017-10-17 | 2018-03-09 | 中国科学院半导体研究所 | Curved tapers photon crystal laser and array, array light source group |
| CN107785776B (en) * | 2017-10-17 | 2020-03-17 | 中国科学院半导体研究所 | Curved conical photonic crystal laser, array and array light source set |
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