CN107785776B - Curved conical photonic crystal laser, array and array light source set - Google Patents
Curved conical photonic crystal laser, array and array light source set Download PDFInfo
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- CN107785776B CN107785776B CN201710997431.3A CN201710997431A CN107785776B CN 107785776 B CN107785776 B CN 107785776B CN 201710997431 A CN201710997431 A CN 201710997431A CN 107785776 B CN107785776 B CN 107785776B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Abstract
The invention discloses a curved conical photonic crystal laser, an array and an array light source group. Wherein, crooked toper photonic crystal laser includes: the ridge waveguide part, the bent waveguide part and the tapered light amplifying part are connected in sequence; wherein the ridge waveguide portion is a straight waveguide, the curved waveguide portion has a curvature, and the tapered optical amplifying portion is divergent in a direction of the optical output. By introducing the photonic crystal structure, the narrow vertical and horizontal divergence angles are realized by regulating and controlling the intracavity mode, the optical alignment and compression system is simplified, and by reasonably designing the waveguide structure, the waveguide modes of different parts are matched, so that multi-angle and wide-range laser output can be realized under the condition of not rotating a machine table, the range and precision of laser irradiation and scanning are increased, and the adjustable and low-angle laser scanning device has adjustable and low-angle resolution, compact structure, high stability and low cost, and has wide application prospect in the fields of laser ranging, laser imaging, laser radar and the like.
Description
Technical Field
The disclosure belongs to the technical field of semiconductor optoelectronic devices, and relates to a curved tapered photonic crystal laser, an array and an array light source group.
Background
The semiconductor laser is a light source with highest electro-optic conversion efficiency, and has the advantages of wide coverage band range, long service life, direct modulation capability, small volume, low cost and the like. The method has wide application in the fields of laser ranging, laser imaging, optical information storage and the like. Early light sources for laser ranging and laser imaging were a ruby laser and CO2Gas lasers, but solid-state lasers and gas lasersCompared with a semiconductor laser, the laser has the defects of large volume, low efficiency, poor reliability and the like. With the maturity of the semiconductor laser manufacturing process, the output power of the semiconductor laser is continuously improved, the cost is continuously reduced, and the laser radar using the semiconductor laser as a light source is promoted to be rapidly developed and becomes a hotspot of research and development of the laser radar.
In a laser radar device, in order to effectively perform laser imaging and laser ranging, a light source is required to perform wide-angle, large-range and high-precision scanning and irradiation, wherein the larger the scanning range is, the larger the imageable range is, and the more information around the laser can be sensed; the smaller the source divergence angle used for scanning, the more data points are available and the higher the imaging accuracy. At present, a commercial semiconductor laser has a horizontal divergence angle of 10-25 degrees and a vertical divergence angle of about 40 degrees, is limited in detectable range and poor in angular resolution, and can be used only by being matched with a series of compression collimating optical systems. To increase the scanning range, some commercial lidar devices place the semiconductor laser on a rotatable stage, which increases the scanning range of the semiconductor laser by rotation of the stage, but this significantly increases the size, system complexity and instability of the lidar device, as well as its cost.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a curved tapered photonic crystal laser, and an array light source set, so as to at least partially solve the above-mentioned technical problems.
(II) technical scheme
According to an aspect of the present disclosure, there is provided a curved tapered photonic crystal laser including: the ridge waveguide part, the bent waveguide part and the tapered light amplifying part are connected in sequence; wherein the ridge waveguide portion is a straight waveguide, the curved waveguide portion has a curvature, and the tapered optical amplifying portion is divergent in a direction of the optical output.
In some embodiments of the present disclosure, the epitaxial structure of the ridge waveguide portion, the curved waveguide portion and the tapered light amplification portion is a stacked structure, which includes, in order from bottom to top: the semiconductor device comprises an N-type substrate, an N-type limiting layer, a photonic crystal layer, an active layer, a P-type limiting layer and a P-type covering layer; the ridge waveguide part, the bent waveguide part and the conical light amplification part which are connected in sequence are formed by etching the P-type cover layer from the upper surface of the laminated structure, the ridge waveguide part, the bent waveguide part and the conical light amplification part become convex parts, and the rest concave parts are the P-type cover layer left after etching.
In some embodiments of the present disclosure, a curved tapered photonic crystal laser, further comprising: the lower electrode is formed below the N-type substrate; an electrically insulating layer over the recessed portion; and an upper electrode positioned on the protruding portion.
In some embodiments of the present disclosure, the ridge waveguide portion is a straight waveguide, the ridge waveguide portion having a width between 300nm and 200 μm; and/or the profile of the ridge waveguide comprises: rectangular, trapezoidal, or triangular; and/or the width of the bent waveguide part is between 300nm and 200 mu m, the bending radius is between 50 mu m and 500 mu m, and the length is between 50 mu m and 500 mu m; and/or the width of the starting end of the tapered optical amplifying section is 300nm to 50 μm, and the opening angle theta1Between 0 and 15 DEG, and an inclination angle theta2Between 0 and 15 degrees and between 50 and 500 mu m in length.
In some embodiments of the present disclosure, the structure of the active layer includes: the quantum well, quantum wire or quantum dot, the material of the active layer is III-V group semiconductor material or II-VI group semiconductor material, the gain spectrum peak wavelength range of the active layer covers near ultraviolet to infrared band; and/or the material of the electrically insulating layer comprises: SiO 22、SiN4Or Al2O3。
According to another aspect of the present disclosure, there is provided a curved tapered photonic crystal laser array comprising: at least two of the curved tapered photonic crystal lasers mentioned in this disclosure.
In some embodiments of the present disclosure, by varying the length of the ridge waveguide, the radius and length of the curved waveguide section, and the opening and tilt angles of the tapered optical amplifying section in each curved tapered photonic crystal laser, lateral far field outputs of different off-angles are achieved while ensuring waveguide mode matching for different sections.
In some embodiments of the present disclosure, the pitch between the individual curved tapered photonic crystal lasers is between 300nm and 500 μm, where pitch means the pitch between ridge waveguide portions.
According to another aspect of the present disclosure, an array light source group is provided, which includes at least two curved tapered photonic crystal laser arrays arranged up and down, and the up and down at least two photonic crystal laser arrays far field lateral deflection angles are distributed in a staggered manner by spatial displacement and different arrangement of the respective curved tapered photonic crystal laser arrays.
In some embodiments of the present disclosure, the number of the curved tapered photonic crystal laser arrays is N, including: a first light source array, a second light source array, ·, an ith light source array, ·, an nth light source array; wherein N is more than or equal to 2; the lateral deflection angle output of the light emitting units in the first light source array comprises: .., -4 °, 0 °, 4 °, 8 °; the lateral deflection angle output of the light emitting unit in the ith light source array comprises: ..., (k)i-4)°，ki°，(ki+4)°，(ki+8) °.; wherein, i is 1, 2, N is the total number of the array; k is a radical ofiThe deviation angle dislocation value of the ith light source array and the previous light source array is obtained.
In some embodiments of the present disclosure, the imaging area of the array light source bank covers a range of-30 ° to 30 °, and the angular resolution of the array light source bank is better than 2 °.
(III) advantageous effects
According to the technical scheme, the curved tapered photonic crystal laser, the array and the array light source group have the following beneficial effects:
by introducing the photonic crystal structure, the narrow vertical and horizontal divergence angles are realized by regulating and controlling the intracavity mode, the optical alignment and compression system is simplified, and by reasonably designing the waveguide structure, the waveguide modes of different parts are matched, so that multi-angle and wide-range laser output can be realized under the condition of not rotating a machine table, the range and precision of laser irradiation and scanning are increased, and the adjustable and low-angle laser scanning device has adjustable and low-angle resolution, compact structure, high stability and low cost, and has wide application prospect in the fields of laser ranging, laser imaging, laser radar and the like.
Drawings
Fig. 1 is a top view of an array of curved tapered photonic crystal lasers facing laser imaging according to an embodiment of the present disclosure.
Fig. 2 is a front view of an array light source bank facing laser imaging according to an embodiment of the disclosure.
Fig. 3 is a horizontal far field diagram of a curved tapered photonic crystal laser facing laser imaging according to an embodiment of the present disclosure.
Fig. 4 is a vertical far field diagram of a curved tapered photonic crystal laser facing laser imaging according to an embodiment of the present disclosure.
Fig. 5A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with its far-field output spot at a horizontal position at an angle of 0 deg., according to an embodiment of the present disclosure.
Fig. 6A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a 4 ° angle from horizontal according to an embodiment of the present disclosure.
Fig. 7A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at an 8 ° angle from horizontal according to an embodiment of the present disclosure.
Fig. 8A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a 12 ° angle from horizontal according to an embodiment of the present disclosure.
Fig. 9A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a horizontal position at an angle of 16 deg., according to an embodiment of the present disclosure.
Fig. 10A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a horizontal position at an angle of 20 deg., according to an embodiment of the present disclosure.
Fig. 11A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a horizontal position at a 24 ° angle according to an embodiment of the present disclosure.
Fig. 12A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a horizontal position at an angle of 28 deg., according to an embodiment of the present disclosure.
Fig. 5B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a 2 ° angle from horizontal according to an embodiment of the present disclosure.
Fig. 6B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a 6 ° angle from horizontal according to an embodiment of the present disclosure.
Fig. 7B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a 10 ° angle from horizontal according to an embodiment of the present disclosure.
Fig. 8B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a horizontal 14 ° angle according to an embodiment of the present disclosure.
Fig. 9B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at an 18 ° angle from horizontal according to an embodiment of the present disclosure.
Fig. 10B is a schematic diagram of the far-field output spots of a single curved tapered photonic crystal laser in a second array of light sources at a 22 ° angle from horizontal according to an embodiment of the present disclosure.
Fig. 11B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at an angle of 26 ° from horizontal according to an embodiment of the present disclosure.
Fig. 12B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a horizontal position at an angle of 30 deg., according to an embodiment of the present disclosure.
[ notation ] to show
101-a lower electrode; 102-N type substrate;
103-N type confinement layer; 104-a photonic crystal layer;
105-an active layer; 106-P type confinement layer;
a 107-P type cap layer; 108-an electrically insulating layer;
109-an upper electrode;
a 3-ridge waveguide portion; 4-a curved waveguide section;
5-tapered light amplifying section.
Detailed Description
The utility model provides a crooked toper photonic crystal laser and array, array light source group, through introducing the photonic crystal structure, narrower vertical and horizontal divergence angle is realized to regulation and control intracavity mode, optical alignment has been simplified, the compression system, and through rational design waveguide structure, make the waveguide mode matching of different parts, alright realize the multi-angle under the condition that does not need the rotary table, the laser output of wide range, and the scope and the precision of laser irradiation and scanning have been increased, have the adjustable, lower angular resolution, compact structure, high stability, and low cost, have wide application prospect in laser rangefinder, laser imaging, laser radar etc. field.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
According to the laser output device, the waveguide structure is reasonably designed and optimized, the laser emitting direction deviates from the axial direction by a certain angle, different angle emitting can be realized by changing the waveguide structure, so that the laser output in a multi-angle wide range is realized, and the irradiation and scanning range of laser is increased. Meanwhile, the photonic crystal can regulate and control an in-cavity mode to realize that the horizontal divergence angle is only 4 degrees and the vertical divergence angle is less than 10 degrees, so that the complexity of an optical system can be effectively simplified.
In a first exemplary embodiment of the present disclosure, a curved tapered photonic crystal laser is provided.
Fig. 1 is a top view of an array of curved tapered photonic crystal lasers facing laser imaging according to an embodiment of the present disclosure. Fig. 2 is a front view of an array light source bank facing laser imaging according to an embodiment of the disclosure.
Referring to one of the light emitting units in fig. 1 and 2, the curved tapered photonic crystal laser of the present disclosure includes: a ridge waveguide portion 3, a curved waveguide portion 4 and a tapered (Taper) light amplifying portion 5 connected in this order; wherein the ridge waveguide portion 3 is a straight waveguide, the curved waveguide portion has a curvature, and the tapered optical amplifying portion is divergent in the direction of the optical output.
The various portions of the curved tapered photonic crystal laser of the present disclosure are described in detail below in conjunction with fig. 1 and 2.
Referring to fig. 2, the epitaxial structure of the ridge waveguide portion 3, the curved waveguide portion 4 and the tapered optical amplifying portion 5 is a stacked structure including: an N-type substrate 102; a lower electrode 101 formed on the lower surface of the N-type substrate 102; an N-type confinement layer 103 formed on the upper surface of the N-type substrate 102; a photonic crystal layer 104 formed on the N-type confinement layer 103; an active layer 105 formed on the photonic crystal layer 104; a P-type confinement layer 106 formed over the active layer 105; and a P-type cap layer 107 formed on the P-type confinement layer 106; the ridge waveguide portion 3, the curved waveguide portion 4 and the Taper optical amplifying portion 5, which are connected in sequence, are formed by etching the P-type cap layer 107 from the upper surface of the stacked structure, and the protruding portions include: a ridge waveguide part 3, a bent waveguide part 4 and a tapered light amplification part 5, wherein the recessed part is the upper surface of the P-type cover layer 107 left after etching; an electrically insulating layer 108 over the recessed portion; and an upper electrode 109 on the P-type cap layer 107 in the protruding portion.
Referring to FIG. 1, the ridge waveguide portion 3 has a length d1The length represents the length of the ridge waveguide portion 3 along the y direction; the curved waveguide section 4 has an arc with a radius R corresponding to the arc length, the length of the curved waveguide section 4 in the v-direction being d2(ii) a The tapered light amplification section 5 is divergent in the direction of light output, and has an opening angle theta1An angle of inclination theta2Wherein, the opening angle is the opening angle formed by two sides of the cone-shaped light amplification part, the inclination angle is the included angle between the inclined side and the positive direction of the y axis, and the trend and the opening size of the cone-shaped light amplification part 5 can be determined by the two parameters; the coneThe length of the shaped optical amplifying section 5 along the y direction is d3。
In the embodiment, the ridge waveguide part 3 is a straight waveguide, and the width of the ridge waveguide part 3 is between 300nm and 200 μm; the profile of the ridge waveguide includes, but is not limited to: rectangular, trapezoidal, or triangular.
In this embodiment, the width of the curved waveguide portion 4 is 300nm to 200 μm, the bending radius is 50 μm to 500 μm, and the length is 50 μm to 500 μm.
In this embodiment, the width of the starting end of the tapered optical amplifying section 5 is 300nm to 50 μm, and the opening angle θ1Between 0 DEG and 15 DEG, angle of inclination theta2Between 0 and 15 degrees and between 50 and 500 mu m in length.
In the present embodiment, the photonic crystal layer 104 is a common photonic crystal structure, but the present disclosure is not limited thereto, and may be other symmetric and asymmetric waveguide structures.
In this embodiment, the structure adopted by the active layer 105 includes: the quantum well, the quantum wire or the quantum dot are made of III-V group semiconductor materials or II-VI group semiconductor materials, and the peak wavelength range of the gain spectrum covers near ultraviolet to infrared bands.
In this embodiment, the material of the electrically insulating layer 108 includes: SiO 22、SiN4Or Al2O3And the like.
In this embodiment, the curved tapered photonic crystal laser is fabricated using an epitaxial wafer of a photonic crystal semiconductor laser having a GaAs substrate with an emission wavelength of 980 nm. The manufacturing process mainly comprises the following steps: firstly, manufacturing an epitaxial wafer: sequentially growing an N-type limiting layer, a photonic crystal layer, an active layer, a P-type limiting layer and a P-type cover layer on a GaAs substrate to prepare an epitaxial wafer; secondly, manufacturing a ridge waveguide part, a bent waveguide part and a taper light amplification part: etching the ridge waveguide part, the bent waveguide part and the taper light amplifying part by basic photoetching and inductively coupled plasma etching (ICP) processes; thirdly, manufacturing an electrode and an electric insulating layer: depositing a layer of silicon dioxide insulating material on the whole epitaxial wafer, etching silicon dioxide on the injection region table-board through photoetching and wet etching to form an injection window, finally growing a Ti/Pt/Au material on the p surface as a front electrode, and growing a gold-germanium-nickel material on the n surface as a back electrode after the substrate is thinned.
The ridge waveguide portion 3, the curved waveguide portion 4 and the Taper optical amplifying portion 5 may be electrically injected in unison to form a Taper laser, or by forming an electrical isolation region between the curved waveguide portion 4 and the Taper optical amplifying portion 5 on the electrode 109 to form a power amplifier (MOPA) structure for a master oscillator.
In a second exemplary embodiment of the present disclosure, there is provided a curved tapered photonic crystal laser array, which includes at least 2 curved tapered photonic crystal lasers shown in the first embodiment; by changing the length of the ridge waveguide part 3, the radius and the length of the curved waveguide part 4 and the opening angle and the inclined angle of the Taper light amplification part 5 in each curved tapered photonic crystal laser, the lateral far field output of different deflection angles is realized under the condition of ensuring the waveguide mode matching of different parts.
The distances among all the bent conical photonic crystal lasers are the same or different, and the formed arrays are arranged in a uniform or non-uniform mode; the distance between the light emitting units is 300 nm-500 μm, and the distance between the ridge waveguides is used as the standard.
In this embodiment, there are 17 curved tapered photonic crystal lasers in the curved tapered photonic crystal laser array, where the 9 th light-emitting unit located in the middle from left to right points to an angle of 0 degree, the other 16 light-emitting units are symmetrically distributed on both sides of the light-emitting unit in a mirror-image manner, and the imaging region covers a range from-30 degrees to 30 degrees.
Fig. 3 is a horizontal far field diagram of a curved tapered photonic crystal laser facing laser imaging according to an embodiment of the present disclosure. Fig. 4 is a vertical far field diagram of a curved tapered photonic crystal laser facing laser imaging according to an embodiment of the present disclosure.
As can be seen from fig. 3 and 4, the horizontal divergence angle of the curved tapered photonic crystal laser array in the present embodiment is only 4 ° by adjusting the intra-cavity mode, as shown in fig. 3 where the value of the half-peak width is 4 °; the vertical divergence angle is less than 10 deg., as shown by the value of 9.2 deg. for the half-width in fig. 4.
Then, it can be known from the above that the minimum angle precision that a curved tapered photonic crystal laser array can realize in the horizontal direction is 4 °, in order to realize the angle regulation and control of lower precision, the present disclosure provides a photonic crystal laser including a plurality of curved tapered photonic crystal laser arrays arranged up and down as shown in the third embodiment, and by performing spatial shift in each curved tapered photonic crystal laser array and different arrangement of the respective curved tapered photonic crystal laser, the far-field lateral deflection angles of the upper and lower two photonic crystal laser arrays are in staggered distribution, thereby realizing the angle output regulation of lower precision.
In a third exemplary embodiment of the present disclosure, an array light source group is provided, which includes two curved tapered photonic crystal laser arrays, where the two curved tapered photonic crystal laser arrays are arranged up and down, and the far-field lateral deflection angles of the two curved tapered photonic crystal laser arrays are distributed in a staggered manner by spatial displacement and different arrangements of the respective curved tapered photonic crystal lasers, so as to achieve angular resolution adjustment with smaller precision.
Referring to fig. 2, in this embodiment, an upper and a lower curved tapered photonic crystal laser arrays are arranged correspondingly, an upper light source array shown in fig. 2 is referred to as a first light source array, and a lower light source array is referred to as a second light source array, where the first light source array includes 15 curved tapered photonic crystal lasers, and a lateral off-angle output of a light emitting unit of the first light source array is: 0 °, 4 °, 8 °, 28 °; in the second light source array, 16 curved cone-shaped photonic crystal lasers are included, and the lateral deflection angle output of the light emitting units of the second light source array is as follows: 2 °, 6 °, 10 °, 30 °. The lateral deflection angle outputs of the two curved tapered photonic crystal laser arrays have a deflection angle dislocation value, which is 2 degrees in the embodiment, so that lower angular resolution is realized.
Thereby, in order to achieve a lower angular resolution,the photonic crystal array light source can be expanded to a plurality of arrays. In a similar manner as described above, the laterally-angled output of the light emitting units in the first light source array includes: 0 °, 4 °, 8 °; the lateral deflection angle output of the light emitting unit in the ith light source array comprises: k is a radical ofi°，(ki+4)°，(ki+8) °.; wherein, i is 1, 2, N is the total number of the array; ki is the deflection angle dislocation value of the ith light source array and the previous light source array, and the corresponding matching selection of the deflection angle dislocation value and the array number can be carried out as long as the parameters and the requirements of the actual device are met; in addition, referring to the second embodiment, the output angle may be a negative angle, and the arrangement of the light emitting units may be performed in a mirror-symmetrical distribution.
Fig. 5A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with its far-field output spot at a horizontal position at an angle of 0 deg., according to an embodiment of the present disclosure. Referring to fig. 5A, in this embodiment, the far-field output spot is at a horizontal position at an angle of 0 °, where the length of the ridge waveguide portion is 800nm, the bend-free waveguide portion, the length of the taper optical amplifying portion is 400nm, the opening angle is 2 °, and there is no tilt angle.
Fig. 6A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a 4 ° angle from horizontal according to an embodiment of the present disclosure. Referring to fig. 6A, in this embodiment, the far-field output spot is at a horizontal 4 ° angle, where the length of the ridge waveguide section is 500nm, the radius of the curved waveguide section is 1mm, the length of the taper section is 400nm, the opening angle is 2 °, and the tilt angle is 1 °.
Fig. 7A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at an 8 ° angle from horizontal according to an embodiment of the present disclosure. Referring to fig. 7A, in this embodiment, the far-field output spot is at an angle of 8 ° in the horizontal position, where the length of the ridge waveguide portion is 300nm, the radius of the curved waveguide portion is 1mm, the length of the taper optical amplification portion is 400nm, the opening angle is 2 °, and the tilt angle is 2.5 °.
Fig. 8A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a 12 ° angle from horizontal according to an embodiment of the present disclosure. Referring to fig. 8A, in this embodiment, the far-field output spot is at a 12 ° angle from horizontal, where the length of the ridge waveguide section is 200nm, the radius of the curved waveguide section is 1mm, the length of the taper optical amplification section is 400nm, the opening angle is 2 °, and the tilt angle is 3 °.
Fig. 9A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a horizontal position at an angle of 16 deg., according to an embodiment of the present disclosure. Referring to fig. 9A, in this embodiment, the far-field output spot is at a horizontal 16 ° angle, where the length of the ridge waveguide section is 100nm, the radius of the curved waveguide section is 1mm, the length of the taper optical amplification section is 400nm, the opening angle is 2 °, and the tilt angle is 3.5 °.
Fig. 10A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a horizontal position at an angle of 20 deg., according to an embodiment of the present disclosure. Referring to fig. 10A, in this embodiment, the far-field output spot is at a horizontal position at an angle of 20 °, where the length of the ridge waveguide portion is 100nm, the radius of the curved waveguide portion is 1mm, the length of the taper optical amplification portion is 400nm, the opening angle is 2 °, and the tilt angle is 4.5 °.
Fig. 11A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a horizontal position at a 24 ° angle according to an embodiment of the present disclosure. Referring to fig. 11A, in this embodiment, the far-field output spot is at a horizontal position at an angle of 24 °, where the length of the ridge waveguide portion is 100nm, the radius of the curved waveguide portion is 1mm, the length of the taper optical amplifying portion is 400nm, the opening angle is 2 °, and the tilt angle is 5.5 °.
Fig. 12A is a schematic diagram of a single curved tapered photonic crystal laser in a first array of light sources with the far-field output spot at a horizontal position at an angle of 28 deg., according to an embodiment of the present disclosure. Referring to fig. 12A, in this embodiment, the far-field output spot is at a horizontal position at an angle of 28 °, where the length of the ridge waveguide portion is 100nm, the radius of the curved waveguide portion is 1mm, the length of the taper optical amplifying portion is 400nm, the opening angle is 2 °, and the tilt angle is 6.5 °.
Fig. 5B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a 2 ° angle from horizontal according to an embodiment of the present disclosure. Referring to fig. 5B, in this embodiment, the far-field output spot is at a horizontal position at an angle of 2 °, where the length of the ridge waveguide portion is 100nm, the radius of the curved waveguide portion is 1mm, the length of the taper optical amplifying portion is 400nm, the opening angle is 1.5 °, and the tilt angle is 0.5 °.
Fig. 6B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a 6 ° angle from horizontal according to an embodiment of the present disclosure. Referring to fig. 6B, in this embodiment, the far-field output spot is at a 6 ° angle from horizontal, where the length of the ridge waveguide section is 100nm, the radius of the curved waveguide section is 1mm, the length of the taper optical amplification section is 400nm, the opening angle is 1.5 °, and the tilt angle is 1.5 °.
Fig. 7B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a 10 ° angle from horizontal according to an embodiment of the present disclosure. Referring to fig. 7B, in this embodiment, the far-field output spot is at a horizontal 10 ° angle, where the length of the ridge waveguide section is 100nm, the radius of the curved waveguide section is 1mm, the length of the taper optical amplification section is 400nm, the opening angle is 1.5 °, and the tilt angle is 2.5 °.
Fig. 8B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a horizontal 14 ° angle according to an embodiment of the present disclosure. Referring to fig. 8B, in this embodiment, the far field output spot is at a horizontal 14 ° angle, where the length of the ridge waveguide section is 100nm, the radius of the curved waveguide section is 1mm, the length of the taper optical amplification section is 400nm, the opening angle is 1.5 °, and the tilt angle is 3.5 °.
Fig. 9B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at an 18 ° angle from horizontal according to an embodiment of the present disclosure. Referring to fig. 9B, in this embodiment, the far-field output spot is at an angle of 18 ° from horizontal, where the length of the ridge waveguide section is 100nm, the radius of the curved waveguide section is 1mm, the length of the taper optical amplification section is 400nm, the opening angle is 1.5 °, and the tilt angle is 4.5 °.
Fig. 10B is a schematic diagram of the far-field output spots of a single curved tapered photonic crystal laser in a second array of light sources at a 22 ° angle from horizontal according to an embodiment of the present disclosure. Referring to fig. 10B, in this embodiment, the far-field output spot is at a horizontal position at an angle of 22 °, where the length of the ridge waveguide portion is 100nm, the radius of the curved waveguide portion is 1mm, the length of the taper optical amplifying portion is 400nm, the opening angle is 1.5 °, and the tilt angle is 5 °.
Fig. 11B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at an angle of 26 ° from horizontal according to an embodiment of the present disclosure. Referring to fig. 11B, in this embodiment, the far-field output spot is at a horizontal position at an angle of 26 °, where the length of the ridge waveguide portion is 100nm, the radius of the curved waveguide portion is 1mm, the length of the taper optical amplifying portion is 400nm, the opening angle is 1.5 °, and the tilt angle is 6 °.
Fig. 12B is a schematic diagram of a single curved tapered photonic crystal laser in a second array of light sources with the far-field output spot at a horizontal position at an angle of 30 deg., according to an embodiment of the present disclosure. Referring to fig. 12B, in this embodiment, the far-field output spot is at a horizontal position at an angle of 30 °, where the length of the ridge waveguide portion is 100nm, the radius of the curved waveguide portion is 1mm, the length of the taper optical amplifying portion is 400nm, the opening angle is 1.5 °, and the tilt angle is 6.5 °.
In summary, the present disclosure provides a curved tapered photonic crystal laser, an array and an array light source group, wherein a photonic crystal structure is introduced to adjust and control an intra-cavity mode to realize a narrow vertical and horizontal divergence angle, so as to simplify an optical alignment and compression system, and the waveguide structures are reasonably designed to match waveguide modes of different parts, so that multi-angle and wide-range laser output can be realized without rotating a machine, and the ranges and accuracies of laser irradiation and scanning are increased.
It should be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, mentioned in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure. And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" or "comprises" does not exclude the presence of elements or steps other than those listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (11)
1. A curved tapered photonic crystal laser comprising:
the ridge waveguide part, the bent waveguide part and the tapered light amplifying part are connected in sequence;
wherein the ridge waveguide portion is a straight waveguide, the curved waveguide portion has a curvature, and the tapered optical amplifying portion is divergent in a direction of the optical output.
2. The curved tapered photonic crystal laser of claim 1, wherein the epitaxial structure of the ridge waveguide portion, the curved waveguide portion, and the tapered optical amplifying portion is a stacked structure comprising, in order from bottom to top: the semiconductor device comprises an N-type substrate, an N-type limiting layer, a photonic crystal layer, an active layer, a P-type limiting layer and a P-type covering layer; the ridge waveguide part, the bent waveguide part and the conical light amplification part which are connected in sequence are formed by etching the P-type cover layer from the upper surface of the laminated structure, the ridge waveguide part, the bent waveguide part and the conical light amplification part become convex parts, and the rest concave parts are the P-type cover layer left after etching.
3. The curved tapered photonic crystal laser of claim 2, further comprising:
the lower electrode is formed below the N-type substrate;
an electrically insulating layer over the recessed portion; and
and an upper electrode positioned on the protruding portion.
4. The curved tapered photonic crystal laser of claim 1, wherein:
the ridge waveguide part is a straight waveguide, and the width of the ridge waveguide part is between 300nm and 200 mu m; and/or the profile of the ridge waveguide comprises: rectangular, trapezoidal, or triangular; and/or
The width of the bent waveguide part is 300 nm-200 mu m, the bending radius is 50 mu m-500 mu m, and the length is 50 mu m-500 mu m; and/or
The width of the starting end of the conical light amplification part is between 300nm and 50 mu m, and the opening angle theta1Between 0 and 15 DEG, and an inclination angle theta2Between 0 and 15 degrees and between 50 and 500 mu m in length.
5. The curved tapered photonic crystal laser of claim 2, wherein,
the structure of the active layer includes: the quantum well, the quantum wire or the quantum dot, the material of the active layer is III-V group semiconductor material or II-VI group semiconductor material, and the gain spectrum peak wavelength range of the active layer covers near ultraviolet to infrared wave band.
6. The curved tapered photonic crystal laser of claim 3, wherein the material of the electrically insulating layer comprises: SiO 22SiN4 or Al2O3。
7. A curved tapered photonic crystal laser array comprising:
at least two curved tapered photonic crystal lasers as claimed in any one of claims 1 to 6; by changing the length of the ridge waveguide, the radius and the length of the curved waveguide part and the opening angle and the inclined angle of the tapered light amplification part in each curved tapered photonic crystal laser, the lateral far-field output with different deflection angles is realized under the condition of ensuring the waveguide mode matching of different parts.
8. The curved tapered photonic crystal laser array of claim 7, wherein the pitch between each of the curved tapered photonic crystal lasers is between 300nm and 500 μm, where pitch means the pitch between ridge waveguide portions.
9. An arrayed light source group comprising at least two of the curved tapered photonic crystal laser arrays of claim 7 arranged up and down, wherein the far field lateral deflection angles of the at least two of the photonic crystal laser arrays arranged up and down are staggered by spatial displacement and different arrangement of the respective curved tapered photonic crystal lasers.
10. The array light source bank of claim 9 wherein the number of curved tapered photonic crystal laser arrays is N, comprising: a first light source array, a second light source array, ·, an ith light source array, ·, an nth light source array; wherein N is more than or equal to 2;
the lateral deflection angle output of the light emitting units in the first light source array comprises: .., -4 °, 0 °, 4 °, 8 °; the lateral deflection angle output of the light emitting unit in the ith light source array comprises: ..., (k)i-4)°，ki°，(ki+4)°，(ki+8) °.; wherein, i is 1, 2, N is the total number of the array; k is a radical ofiThe deviation angle dislocation value of the ith light source array and the previous light source array is obtained.
11. The banks of arrayed light sources of claim 9 or 10, the imaging area of the banks of arrayed light sources covering the range of-30 ° to 30 ° and the angular resolution of the banks of arrayed light sources being better than 2 °.
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| US10345519B1 (en) * | 2018-04-11 | 2019-07-09 | Microsoft Technology Licensing, Llc | Integrated optical beam steering system |
| CN109861079B (en) * | 2019-01-08 | 2021-02-23 | 中国科学院半导体研究所 | Microstructure laser-based one-dimensional radar scanning and transmitting device and preparation method |
| CN111146691B (en) * | 2020-01-19 | 2021-08-06 | 长春理工大学 | Surface emitting laser array |
| CN113258447B (en) * | 2021-05-18 | 2022-02-25 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser array and preparation method thereof |
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