CN109038219B - Tunnel junction photonic crystal laser with narrow vertical far field divergence angle - Google Patents
Tunnel junction photonic crystal laser with narrow vertical far field divergence angle Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Abstract
The present disclosure provides a tunnel junction photonic crystal laser, comprising: a substrate; and a plurality of stacked structures sequentially formed on the substrate; wherein each of the stacked structures includes an active layer and a photonic crystal layer, and a tunnel junction is formed between adjacent stacked structures. The tunnel junction photonic crystal laser improves peak power, increases detection distance of laser, realizes laser output of a vertical far field divergence angle with high peak power and narrow vertical far field divergence angle, and has wide application prospect in the fields of laser ranging, laser imaging, laser radar and the like.
Description
Technical Field
The disclosure belongs to the technical field of semiconductor photoelectronic devices, and particularly relates to a tunnel junction photonic crystal laser with a narrow vertical far field divergence angle.
Background
The semiconductor laser is a light source with highest electro-optic conversion efficiency, and has the advantages of wide coverage band range, long service life, direct modulation capability, small volume, low cost and the like. The method has wide application in the fields of laser ranging, laser imaging, optical information storage and the like. Early light sources for laser ranging and laser imaging were a ruby laser and CO2Gas lasers, however, solid state lasers and gas lasers suffer from the disadvantages of large size, low efficiency, poor reliability, etc., as compared to semiconductor lasers. With the maturity of the semiconductor laser manufacturing process, the output power of the semiconductor laser is continuously improved, the cost is continuously reduced, and the laser radar using the semiconductor laser as a light source is promoted to be rapidly developed and becomes a hotspot of research and development of the laser radar.
In a laser radar device, in order to effectively perform laser imaging and laser ranging, a light source is required to perform long-distance and high-precision scanning detection, wherein the higher the peak power of laser is, the longer the detectable distance is; the smaller the source divergence angle used for scanning, the more data points are available and the higher the imaging accuracy. At present, a common single-junction semiconductor laser in commercial use has a horizontal divergence angle of about 10 degrees and a vertical divergence angle of about 40 degrees. The horizontal divergence angle of a commercial three-active-region tunnel junction semiconductor laser is about 10 degrees, and the vertical divergence angle is about 25 degrees. The detectable range is limited and the angular resolution is poor, and the system can be used together with a series of compression collimation optical systems. This significantly increases the size, system complexity and instability of the lidar apparatus, as well as increasing its cost.
Disclosure of Invention
Technical problem to be solved
In view of the above problems, it is a primary object of the present disclosure to provide a tunnel junction photonic crystal laser with a narrow vertical far field divergence angle in order to solve at least one of the above problems.
(II) technical scheme
In order to achieve the above object, as one aspect of the present disclosure, there is provided a tunnel junction photonic crystal laser including:
a substrate; and
a plurality of stacked structures sequentially formed on the substrate;
wherein each of the stacked structures includes an active layer and a photonic crystal layer, and a tunnel junction is formed between adjacent stacked structures.
In some embodiments, the substrate is an N-type substrate; the laminated structure includes: the photonic crystal structure comprises an N-type limiting layer, the photonic crystal layer formed on the N-type limiting layer, an N-side waveguide layer formed on the photonic crystal layer, an active layer formed on the N-side waveguide layer, a P-side waveguide layer formed on the active layer, a photonic crystal layer formed on the P-side waveguide layer and a P-type limiting layer formed on the photonic crystal layer.
In some embodiments, the tunnel junction photonic crystal laser includes three of the stacked structures, a first stacked structure formed on the substrate, a second stacked structure formed on the first stacked structure, and a third stacked structure formed on the second stacked structure; wherein a first tunnel junction is formed between the first and second stacked structures, and a second tunnel junction is formed between the second and third stacked structures.
In some embodiments, the N-type confinement layer of the first stacked structure is formed on the N-type substrate, the first tunnel junction is formed on the P-type confinement layer of the first stacked structure, the N-type confinement layer of the second stacked structure is formed on the first tunnel junction, the second tunnel junction is formed on the P-type confinement layer of the second stacked structure, and the N-type confinement layer of the third stacked structure is formed on the second tunnel junction.
In some embodiments, the tunnel junction photonic crystal laser further comprises:
a cap layer formed on the P-type confinement layer of the third stacked structure;
the ohmic contact layer is formed on the cover layer, wherein the ohmic contact layer and the cover layer form a ridge waveguide structure through selective etching, and the ridge waveguide structure comprises a convex part and concave parts positioned on two sides of the convex part;
an electric insulating layer formed on the concave portions on both sides of the convex portion;
an upper electrode formed on the ohmic contact layer and the electrical insulation layer; and
and the lower electrode is formed on the N-type substrate.
In some embodiments, the first tunnel junction and the second tunnel junction are made of III-V semiconductor materials or II-VI semiconductor materials.
In some embodiments, the structure of the active layer comprises: quantum wells, quantum wires or quantum dots; the active layer is made of III-V group semiconductor materials or II-VI group semiconductor materials; the peak wavelength range of the gain spectrum of the active layer covers the near ultraviolet to infrared bands.
In some embodiments, the photonic crystal layer is formed by alternately stacking a first refractive index material and a second refractive index material, the first refractive index being smaller than the second refractive index.
In some embodiments, the electrically insulating layer is made of SiO2、SiN4Or Al2O3。
In some embodiments, the ridge waveguide structure has a width between 500nm and 500 μm; the ridge waveguide has a rectangular, trapezoidal or triangular cross section.
(III) advantageous effects
According to the technical scheme, the tunnel junction photonic crystal laser with the narrow vertical far field divergence angle has at least one of the following beneficial effects:
(1) by utilizing the multi-active-region and tunnel junction structure, the peak power is improved, and the detection distance of laser is increased.
(2) By introducing the photonic crystal structure into the epitaxial structure and utilizing the photonic crystal energy band folding effect, the mode matching coupling of a laser mode field in the active region and the tunneling layer is realized, and the laser output with high peak power and narrow vertical far field divergence angle is realized.
(3) The tunnel junction photonic crystal laser is beneficial to reducing the size of a laser radar device and reducing the complexity and instability of a system, and has wide application prospects in the fields of laser ranging, laser imaging, laser radar and the like.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional structure of a tunnel junction photonic crystal laser with a narrow vertical far field divergence angle in accordance with an embodiment of the present disclosure.
Fig. 2 is a cross-sectional view of a tunnel junction photonic crystal laser with a narrow vertical far field divergence angle in accordance with an embodiment of the present disclosure.
Fig. 3 is a side far field divergence angle of a tunnel junction photonic crystal laser with a narrow vertical far field divergence angle of lasing wavelength 905nm according to an embodiment of the present disclosure.
Fig. 4 is a vertical near-field profile of a tunnel junction photonic crystal laser with a narrow vertical far-field divergence angle of lasing wavelength 905nm according to an embodiment of the present disclosure.
Fig. 5 is a vertical far field divergence angle of a tunnel junction photonic crystal laser with a narrow vertical far field divergence angle of lasing wavelength 905nm according to an embodiment of the present disclosure.
Fig. 6 is a vertical near-field profile of a tunnel junction photonic crystal laser with a narrow vertical far-field divergence angle of lasing wavelength 980nm in accordance with an embodiment of the present disclosure.
Fig. 7 is a vertical far field divergence angle of a tunnel junction photonic crystal laser with a narrow vertical far field divergence angle of the lasing wavelength of 980nm in accordance with an embodiment of the present disclosure.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
According to the tunnel junction photonic crystal laser with the narrow vertical far-field divergence angle, the peak power of laser pulses can be effectively increased by utilizing a tunnel junction multi-active-area structure, and the photonic crystal structure is introduced into a tunnel junction epitaxial structure, so that the far-field vertical divergence angle of output laser can be greatly reduced, and the simplification of an optical collimating mirror group system in the conventional laser radar device is facilitated.
Specifically, the tunnel junction photonic crystal laser includes:
a substrate; and
a plurality of stacked structures sequentially formed on the substrate;
wherein each of the stacked structures includes an active layer and a photonic crystal layer, and a tunnel junction is formed between adjacent stacked structures.
The tunnel junction photonic crystal laser disclosed by the invention utilizes a multi-active-region structure and a tunnel junction structure, so that the peak power is improved, and the detection distance of laser is increased. In addition, by introducing a photonic crystal structure into the epitaxial structure and utilizing the photonic crystal energy band folding effect, the mode matching coupling of a laser mode field in the active region and the tunneling layer is realized, and the laser output with high peak power and narrow vertical far field divergence angle is realized.
More specifically, the substrate may be an N-type substrate; the laminate structure may include: the photonic crystal structure comprises an N-type limiting layer, the photonic crystal layer formed on the N-type limiting layer, an N-side waveguide layer formed on the photonic crystal layer, an active layer formed on the N-side waveguide layer, a P-side waveguide layer formed on the active layer, a photonic crystal layer formed on the P-side waveguide layer and a P-type limiting layer formed on the photonic crystal layer.
The tunnel junction photonic crystal laser can comprise three laminated structures, namely a first laminated structure formed on the substrate, a second laminated structure formed on the first laminated structure, and a third laminated structure formed on the second laminated structure; wherein a first tunnel junction is formed between the first and second stacked structures, and a second tunnel junction is formed between the second and third stacked structures. It will be appreciated by those skilled in the art that a tunnel junction photonic crystal laser is not limited to including three such stack structures.
Wherein the N-type confinement layer of the first stacked structure is formed on the N-type substrate, the first tunnel junction is formed on the P-type confinement layer of the first stacked structure, the N-type confinement layer of the second stacked structure is formed on the first tunnel junction, the second tunnel junction is formed on the P-type confinement layer of the second stacked structure, and the N-type confinement layer of the third stacked structure is formed on the second tunnel junction.
Further, the tunnel junction photonic crystal laser further includes: a cap layer formed on the P-type confinement layer of the third stacked structure; the ohmic contact layer is formed on the cover layer, wherein the ohmic contact layer and the cover layer form a ridge waveguide structure through selective etching, and the ridge waveguide structure comprises a convex part and concave parts positioned on two sides of the convex part; an electric insulating layer formed on the concave portions on both sides of the convex portion; an upper electrode formed on the ohmic contact layer and the electrical insulation layer; and a lower electrode formed on the N-type substrate.
In one embodiment, referring to fig. 1-2, the narrow vertical far field divergence angle tunnel junction photonic crystal laser comprises:
an N-type substrate 2;
a lower electrode 1 formed on the lower surface of the N-type substrate 2;
an N-type confinement layer 3 formed on the upper surface of the N-type substrate 2;
a photonic crystal layer 4 formed on the N-type confinement layer 3;
an N-side waveguide layer 5 formed over the photonic crystal layer 4;
an active layer 6 formed on the N-side waveguide layer 5;
a P-side waveguide layer 7 formed on the active layer 6;
a photonic crystal layer 8 formed on the P-side waveguide layer 7;
a P-type confinement layer 9 formed on the photonic crystal layer;
a tunnel junction 10 formed on the P-type confinement layer 9;
an N-type confinement layer 11 formed over the tunnel junction 10;
a photonic crystal layer 12 formed on the N-type confinement layer 11;
an N-side waveguide layer 13 formed on the photonic crystal layer 12;
an active layer 14 formed on the N-side waveguide layer 13;
a P-side waveguide layer 15 formed over the active layer 14;
a photonic crystal layer 16 formed on the P-side waveguide layer 15;
a P-type confinement layer 17 formed on the photonic crystal layer 16;
a tunnel junction 18 formed on the P-type confinement layer 17;
an N-type confinement layer 19 formed over the tunnel junction 18;
a photonic crystal layer 20 formed on the N-type confinement layer 19;
an N-side waveguide layer 21 formed on the photonic crystal layer 20;
an active layer 22 formed on the N-side waveguide layer 21;
a P-side waveguide layer 23 formed over the active layer 22;
a photonic crystal layer 24 formed on the P-side waveguide layer 23;
a P-type confinement layer 25 formed on the photonic crystal layer 24;
a cap layer 26 formed on the P-type confinement layer 25;
an ohmic contact layer 27 formed on the cap layer 26, wherein the ohmic contact layer and the cap layer can be selectively etched to form a ridge waveguide structure 28, which includes a convex portion and concave portions at two sides of the convex portion;
an electrical insulating layer 29 formed over the concave portions on both sides of the convex portion; and
and an upper electrode 30 formed on the ohmic contact layer and the electrically insulating layer.
The tunnel junctions 10 and 18 are formed from two layers of III-V or II-VI semiconductor material, such as GaAs material.
The structure of the active layers 6, 14, 22 comprises: quantum wells, quantum wires or quantum dots; the active layer is made of III-V group semiconductor material or II-VI group semiconductor material; the peak wavelength range of the gain spectrum of the active layer covers the near ultraviolet to infrared bands.
The photonic crystal layers 4, 8, 12, 16, 20, and 24 are formed by alternately stacking low refractive index materials 31 and high refractive index materials 32 with a period of at least one pair.
The electric insulating layer 29 is made of SiO2、SiN4Or Al2O3And the like.
The width of the ridge waveguide structure 28 (the width of the convex portion) is between 500nm and 500 μm. The ridge waveguide profile may be rectangular, trapezoidal or triangular.
The limiting layer and the waveguide layer may be made of GaAs/A1GaAs, and may be formed by MOCVD epitaxial growth, although the materials and the forming processes of the limiting layer and the waveguide layer are not limited thereto.
The tunnel junction photonic crystal laser with narrow vertical far field divergence angle and the manufacturing method thereof according to the present disclosure are described in detail below with reference to an example.
The width of the ridge structure of the tunnel junction photonic crystal laser with a narrow vertical far field divergence angle in the present example is 100 μm. The photonic crystals 4, 8, 12, 16, 20 and 24 respectively comprise 3, 2 and 3 pairs of Al which are alternately grownxGa1-xAs/AlyGa1- yAnd an As layer.
The tunnel junctions 10 and 18 are two layers of GaAs material, but the disclosure is not so limited and is applicable to other III-V semiconductor materials or II-VI semiconductor materials.
The material of the electric insulation layer 29 is SiO2It is also applicable to electrically insulating layers of other materials, such as: SiN4、Al2O3And the like.
The fabrication of the device is performed using an epitaxial wafer of a tunnel junction photonic crystal laser with a narrow vertical far field divergence with an emission wavelength of 905nm, but the disclosure is not limited thereto.
The manufacturing process of the tunnel junction photonic crystal laser with the narrow vertical far field divergence angle mainly comprises the following steps:
firstly, manufacturing an epitaxial wafer: sequentially growing an N-type limiting layer, a photonic crystal layer, an active layer, a photonic crystal layer, a GaAs tunnel junction, a photonic crystal layer, an active layer, a photonic crystal layer, a P-type limiting layer and a P-type cover layer on a GaAs substrate to manufacture an epitaxial wafer;
secondly, manufacturing a ridge waveguide part: etching a ridge waveguide part by a basic photoetching and inductively coupled plasma etching (ICP) process;
thirdly, manufacturing an electrode and an electric insulating layer: depositing a layer of silicon dioxide insulating material on the whole epitaxial wafer, etching silicon dioxide on the injection region table-board through photoetching and wet etching to form an injection window, finally growing a Ti/Pt/Au material on the p surface as a front electrode, and growing a gold-germanium-nickel material on the n surface as a back electrode after the substrate is thinned.
The lateral far-field divergence angle and the vertical far-field divergence angle of the tunnel junction photonic crystal laser of the present example are shown in fig. 3 and 5, respectively, and the vertical near-field distribution is shown in fig. 4. Referring to fig. 3, the lateral far field divergence angle of the tunnel junction photonic crystal laser with a narrow vertical far field divergence angle of a lasing wavelength of 905nm has a full width at half maximum of 4 degrees. Referring to fig. 5, the vertical far field divergence angle of the tunnel junction photonic crystal laser with a narrow vertical far field divergence angle of a lasing wavelength of 905nm has a full width at half maximum of 3 degrees.
In addition, the vertical near-field distribution of the tunnel junction photonic crystal laser with a narrow vertical far-field divergence angle of the lasing wavelength of 980nm is shown in fig. 6; the vertical far field divergence angle of the tunnel junction photonic crystal laser with a lasing wavelength of 980nm being a narrow vertical far field divergence angle has a full width half maximum value of 3.87 degrees as shown in fig. 7.
In summary, the low divergence angle far field distribution of the narrow vertical far field divergence angle tunnel junction photonic crystal laser of the present disclosure facilitates simplifying the optical collimating compression system and reducing the complexity of the system. By utilizing the tunnel junction multi-active-area structure, the laser pulse output with higher peak power is realized, and the detection distance of the laser is effectively increased. Through the reasonable epitaxial structure of the tunnel junction photonic crystal laser, the photonic crystal structure, the active region and the tunneling layer are reasonably distributed, and mode matching coupling is realized, so that the laser output with the narrow far field vertical divergence angle of high peak power is obtained, and the tunnel junction photonic crystal laser has a wide application prospect in the fields of laser ranging, laser imaging, laser radar and the like.
Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
It should be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, mentioned in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure. And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" or "comprises" does not exclude the presence of elements or steps other than those listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (7)
1. A tunnel junction photonic crystal laser comprising:
a substrate; and
a plurality of stacked structures sequentially formed on the substrate;
each laminated structure comprises an active layer and a photonic crystal layer, and a tunnel junction is formed between the adjacent laminated structures;
the substrate is an N-type substrate; the laminated structure includes: the photonic crystal layer is formed on the N-type limiting layer, the N-side waveguide layer is formed on the photonic crystal layer, the active layer is formed on the N-side waveguide layer, the P-side waveguide layer is formed on the active layer, the photonic crystal layer is formed on the P-side waveguide layer, and the P-type limiting layer is formed on the photonic crystal layer;
the tunnel junction photonic crystal laser comprises three laminated structures, namely a first laminated structure formed on the substrate, a second laminated structure formed on the first laminated structure, and a third laminated structure formed on the second laminated structure; wherein a first tunnel junction is formed between the first and second stacked structures, and a second tunnel junction is formed between the second and third stacked structures;
the N-type confinement layer of the first stacked structure is formed on the N-type substrate, the first tunnel junction is formed on the P-type confinement layer of the first stacked structure, the N-type confinement layer of the second stacked structure is formed on the first tunnel junction, the second tunnel junction is formed on the P-type confinement layer of the second stacked structure, and the N-type confinement layer of the third stacked structure is formed on the second tunnel junction.
2. The tunnel junction photonic crystal laser of claim 1, further comprising:
a cap layer formed on the P-type confinement layer of the third stacked structure;
the ohmic contact layer is formed on the cover layer, wherein the ohmic contact layer and the cover layer form a ridge waveguide structure through selective etching, and the ridge waveguide structure comprises a convex part and concave parts positioned on two sides of the convex part;
an electric insulating layer formed on the concave portions on both sides of the convex portion;
an upper electrode formed on the ohmic contact layer and the electrical insulation layer; and
and the lower electrode is formed on the N-type substrate.
3. The tunnel junction photonic crystal laser of claim 1, wherein the first and second tunnel junctions are of a III-V semiconductor material or a II-VI semiconductor material.
4. The tunnel junction photonic crystal laser of claim 1, wherein the structure of the active layer comprises: quantum wells, quantum wires or quantum dots; the active layer is made of III-V group semiconductor materials or II-VI group semiconductor materials; the peak wavelength range of the gain spectrum of the active layer covers the near ultraviolet to infrared bands.
5. The tunnel junction photonic crystal laser of claim 2, wherein the photonic crystal layer is formed of alternating stacks of a first refractive index material and a second refractive index material, the first refractive index being less than the second refractive index.
6. The tunnel junction photonic crystal laser of claim 5, wherein the electrically insulating layer is SiO2、SiN4Or Al2O3。
7. The tunnel junction photonic crystal laser of claim 5, wherein the ridge waveguide structure has a width between 500nm and 500 μm; the ridge waveguide has a rectangular, trapezoidal or triangular cross section.
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| CN115882334B (en) * | 2021-09-29 | 2023-12-12 | 常州纵慧芯光半导体科技有限公司 | VCSEL laser with small divergence angle, chip and light source for LIDAR system |
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| US20070030873A1 (en) * | 2005-08-03 | 2007-02-08 | Finisar Corporation | Polarization control in VCSELs using photonics crystals |
| JP5322453B2 (en) * | 2008-02-07 | 2013-10-23 | キヤノン株式会社 | 3D photonic crystal light emitting device |
| CN102651536B (en) * | 2012-05-28 | 2015-08-19 | 中国电子科技集团公司第十三研究所 | Many laminations tunnel cascade semiconductor laser |
| CN102832538A (en) * | 2012-09-10 | 2012-12-19 | 中国科学院半导体研究所 | Active area broadband gain structure with layers of quantum dot tunnel junction connected in series |
| CN103346478B (en) * | 2013-06-13 | 2015-07-29 | 中国科学院半导体研究所 | In stibium gallium, infrared round spot exports low divergence edge emitting photon crystal laser |
| CN105552715B (en) * | 2016-01-29 | 2018-07-27 | 中国科学院长春光学精密机械与物理研究所 | It is suitble to the high-gain vertical-cavity-face emitting semiconductor laser of hot operation |
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