CN113097859A - FP laser of integrated side direction modulator - Google Patents
FP laser of integrated side direction modulator Download PDFInfo
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- CN113097859A CN113097859A CN202110344374.5A CN202110344374A CN113097859A CN 113097859 A CN113097859 A CN 113097859A CN 202110344374 A CN202110344374 A CN 202110344374A CN 113097859 A CN113097859 A CN 113097859A
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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Abstract
The present disclosure provides an FP laser integrated with a lateral modulator, comprising: the device comprises an N-type InP substrate, an active layer, a P-type InP layer, a lasing FP cavity, a modulation FP cavity, an electrical isolation groove and a P-side electrode layer; growing an N-type InP substrate, an active layer and a P-type InP layer from bottom to top; the lasing FP cavity and the modulation FP cavity are grown on the P-type InP layer, lateral coupling is formed between the lasing FP cavity and the modulation FP cavity, and the lateral direction is perpendicular to the extending direction of the lasing FP cavity and the extending direction of the modulation FP cavity; and P-surface electrode layers are grown on the lasing FP cavity and the modulation FP cavity. In the embodiment of the disclosure, the lasing FP cavity and the modulation FP cavity are arranged on the basis of the same active layer, lateral coupling is formed between the two FP cavities, and the laser and the modulator are integrated in the same device, so that the occupied space and the production cost are saved.
Description
Technical Field
The present disclosure relates to the field of semiconductor lasers, and more particularly, to a Fabry-Perot (FP) laser integrated with a lateral modulator.
Background
The photonic device with high integration level is an important component in an optical communication system and is also a key device for realizing a photonic integrated circuit and realizing on-chip optical communication. In the field of optical communication, the use of a photonic integrated device with high integration level and low energy consumption is beneficial to reducing the overall power consumption of an optical communication system; in the field of chips and integrated circuits, the power consumption and the heat generation of the chips are in super-linear growth along with the increase of the density of transistors, and the communication mode of on-chip electrical interconnection increasingly has great restriction on the improvement of the performance of the chips. On-chip optical communication can perfectly solve the performance bottleneck brought to the chip by on-chip electrical communication, and a high-integration and miniaturized photonic device is the key of on-chip optical communication.
Currently, most of monolithically integrated lasers/modulators are electro-absorption modulated EML lasers, a distributed feedback DFB laser is used as a light source, an electro-absorption modulation area (EAM) is added in the optical path, and a reverse bias is applied to the em for modulation. The scheme has the advantages of complex process, multiple material growth steps, high process requirement, incomplete integration of the laser and the modulator, and serial connection of optical paths of two discrete devices. The modulation voltage required for EML lasers is high, typically above 5V.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides an FP laser integrated with a lateral modulator to solve the technical problems set forth above.
(II) technical scheme
According to an aspect of the present disclosure, there is provided a FP laser integrated with a lateral modulator, comprising:
the active layer is grown on the N-type InP substrate;
a P-type InP layer grown on the active layer;
a lasing FP cavity grown on the P-type InP layer; transmitting light in a lasing FP cavity along the extending direction of the lasing FP cavity;
a modulation FP cavity which grows on the P-type InP layer; light rays propagate in a modulation FP cavity along the extension direction of the modulation FP cavity; lateral coupling is formed between the lasing FP cavity and the modulation FP cavity, and the lateral direction is vertical to the extending direction of the lasing FP cavity and the extending direction of the modulation FP cavity;
the electric isolation groove is arranged between the lasing FP cavity and the modulation FP cavity;
and the P-surface electrode layer is grown on the lasing FP cavity and the modulation FP cavity.
In some embodiments of the present disclosure, the lasing FP cavity and the modulation FP cavity are arranged in parallel.
In some embodiments of the present disclosure, further comprising: and the coating layer is arranged at the end part of the lasing FP cavity and/or the modulation FP cavity.
In some embodiments of the present disclosure, the active layer includes thereon:
the lasing region corresponds to the position of the lasing FP cavity;
and the modulation region corresponds to the position of the modulation FP cavity.
In some embodiments of the present disclosure, a gain caused by carrier injection in the modulation FP cavity is greater than a loss of light propagation of the modulation FP cavity, and the modulation FP cavity is in a gain state to enhance a power of the lasing FP cavity.
In some embodiments of the present disclosure, a gain caused by carrier injection in the modulation FP cavity is smaller than a loss of light propagation of the modulation FP cavity, and the modulation FP cavity is in a loss state, so as to reduce power of the lasing FP cavity.
In some embodiments of the present disclosure, the modulation FP cavity is in a carrier extraction state, and the power of the lasing FP cavity is reduced.
In some embodiments of the present disclosure, the carrier injection or extraction effect of the external world on the FP laser of the integrated lateral modulator is adjusted according to the variation of the potential in the modulation FP cavity.
In some embodiments of the present disclosure, the lasing FP cavity and the modulation FP cavity are stripe ridge waveguide structures.
In some embodiments of the present disclosure, the P-side electrode layer extends from over the lasing FP cavity and the modulation FP cavity onto and covers the P-type InP layer.
(III) advantageous effects
From the technical scheme, the FP laser integrated with the lateral modulator of the present disclosure has at least one or a part of the following beneficial effects:
(1) in the embodiment of the disclosure, the lasing FP cavity and the modulation FP cavity are arranged on the basis of the same active layer, lateral coupling is formed between the two FP cavities, and the laser and the modulator are integrated in the same device, so that the occupied space and the production cost are saved.
(2) In the embodiment of the disclosure, the coating layers are arranged at the ends of the two FP cavities, so that the end face reflectivity is improved.
(3) In the embodiment of the disclosure, the power of the lasing FP cavity can be modulated only by modulating the potential of the modulation FP cavity.
Drawings
Fig. 1 is a schematic perspective view of an FP laser integrated with a lateral modulator according to an embodiment of the present disclosure.
Fig. 2 is a schematic plane structure diagram of an FP laser integrated with a lateral modulator according to an embodiment of the present disclosure.
Fig. 3 is a diagram of the FP laser internal potential profile of the integrated lateral modulator simulated using the finite element method.
Fig. 4 is a partial enlarged view of the internal optical field distribution of the FP laser of the integrated lateral modulator simulated with the finite element method.
Fig. 5 is a graph of FP laser power-current for an integrated lateral modulator according to an embodiment of the present disclosure.
Fig. 6 is a laser spectrum contrast diagram of a lasing FP cavity when the injection current is 50mA, no current is applied to the modulation FP cavity and the lasing FP cavity is 70mA, and the modulation FP cavity is-20 mA according to an embodiment of the disclosure.
Fig. 7 is a graph showing a power-modulation current comparison when the lasing FP cavity applies a modulation current on the basis of 70mA, when the lasing FP cavity current is not changed, the optical power changes with the modulation FP cavity current, and no current is applied to the modulation FP cavity, according to an embodiment of the present disclosure.
Fig. 8 is a graph showing the dynamic response of the FP laser small signal of the integrated lateral modulator measured under the condition that the lasing FP cavity current is kept at 70mA and the modulated FP cavity direct current is 15mA according to an embodiment of the disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
1-lasing FP cavity;
2-modulation FP cavity;
3-an electrical isolation trench;
4-an active layer;
a 5-N type InP substrate;
6-P side electrode layer;
7-P type InP layer.
Detailed Description
The present disclosure provides an FP laser integrated with a lateral modulator, comprising: the device comprises an N-type InP substrate, an active layer, a P-type InP layer, a lasing FP cavity, a modulation FP cavity, an electrical isolation groove and a P-side electrode layer; growing an N-type InP substrate, an active layer and a P-type InP layer from bottom to top; the lasing FP cavity and the modulation FP cavity are grown on the P-type InP layer, lateral coupling is formed between the lasing FP cavity and the modulation FP cavity, and the lateral direction is perpendicular to the extending direction of the lasing FP cavity and the extending direction of the modulation FP cavity; and P-surface electrode layers are grown on the lasing FP cavity and the modulation FP cavity. In the embodiment of the disclosure, the lasing FP cavity and the modulation FP cavity are arranged on the basis of the same active layer, lateral coupling is formed between the two FP cavities, and the laser and the modulator are integrated in the same device, so that the occupied space and the production cost are saved.
There are three main types of optical modulation: direct modulation, intra-cavity modulation, extra-cavity modulation. Direct modulation is a modulation method in which an electric signal is directly applied to a laser, and is simple and easy to implement, and can easily achieve high integration, but high-speed modulation is difficult to achieve. The modulation in the cavity is realized by changing the internal parameters of the laser resonant cavity through the effects of acousto-optic, electro-optic, magneto-optic and the like or mechanical vibration. However, this method is generally applied to Q-switching, mode-locked laser, and the like, and is difficult to apply to semiconductor lasers. The extra-cavity modulation technology is mature, and high-speed modulation is easy to realize. The method has low integration level and is more used for long-distance and large-capacity optical fiber communication. In building optical communications networks we have to make trade-offs, making compromises in some respects.
Therefore, the present disclosure provides an integration scheme of a laser and a modulator for the above-mentioned found technical problems, and achieves a higher optical coupling strength by arranging two FP micro-cavities in parallel and setting appropriate size parameters, so that a proper resistance exists between the two FP micro-cavities, thereby achieving a good modulation effect. In the FP laser of the integrated lateral modulator provided by the disclosure, a lasing FP cavity can work stably, and the modulation of a single parameter of the FP cavity, namely the potential height, can be initiated: the injection or extraction of carriers, the change of carrier density distribution caused by potential distribution and the output power of the laser end adjusted by the optical state of the modulation end enable the same modulation power consumption to obtain larger modulation amplitude. Meanwhile, compared with a directly modulated FP laser, the laser has larger modulation bandwidth. Compared with a monolithic integrated EML laser, the laser has stronger extinction capability and smaller modulation power consumption. The FP laser of the integrated modulator has the advantages of simple preparation process, low cost, high yield and easy integration, and has good application prospect in optical communication and photonic integrated systems.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, a FP laser integrated with a lateral modulator is provided. Fig. 1 is a schematic perspective view of an FP laser integrated with a lateral modulator according to an embodiment of the present disclosure. Fig. 2 is a schematic plane structure diagram of an FP laser integrated with a lateral modulator according to an embodiment of the present disclosure. As shown in fig. 1 and 2, the FP laser of the integrated lateral modulator of the present disclosure includes: an N-type InP substrate 5, an active layer 4, a P-type InP layer 7, a lasing FP cavity 1, a modulation FP cavity 2, an electrical isolation groove and a P-side electrode layer 6.
An active layer 4 is arranged on the N-type InP substrate 5, and the active layer 4 is of a multi-layer quantum well structure. Above the active layer 4 is a P-type InP layer 7. And a lasing FP cavity 1 and a modulation FP cavity 2 are arranged above the P-type InP layer 7 and respectively used as a laser and a modulator. An electrically isolated slot 3 is located between the lasing FP cavity 1 and the modulation FP cavity 2. The lasing FP cavity 1 and the modulation FP cavity 2 are both shallow etched and are not etched to the active layer 4, the active layer 4 below the lasing FP cavity 1 and the modulation FP cavity 2 are mutually communicated, and the lasing FP cavity 1 and the modulation FP cavity 2 form two ridge waveguide structures.
The tunable coupled-cavity semiconductor laser according to the present embodiment is described in detail below with reference to the accompanying drawings. Light propagates back and forth in the modulation FP cavity 2 under the limitation of the ridge waveguide, and in the propagation process, a part of light can be coupled into the lasing FP cavity 1, the higher the coupling strength is, the shorter the path required by the light to be coupled from the modulation FP cavity 2 to the lasing FP cavity 1 is, and the higher the interaction strength of the lasing FP cavity 1 and the modulation FP cavity 2 is. Otherwise, the description is omitted.
In this embodiment, the end surfaces of the lasing FP cavity 1 and the modulation FP cavity 2 are both cleavage surfaces (in this embodiment) or end surface coating structures, and are arranged in parallel. Of course, the laser and modulator of the present disclosure are not limited to the above examples, the optical microcavity used is not limited to a simple FP cavity, and any FP cavity-based variation, such as DFB and DBR laser, can achieve the effect of integrated modulation, so that the variation scheme of simultaneously using lateral (as indicated by the arrow in fig. 2) electric absorption, lateral electric potential to adjust carrier distribution, and lateral optical coupling integrated modulation is within the protection scope of the present disclosure.
Fig. 3 is a diagram of the FP laser internal potential profile of the integrated lateral modulator simulated using the finite element method. As shown in fig. 3, the simulated FP laser device internal potential distribution diagram of the integrated modulator with FP width of 3 microns, pitch of 2 microns and etching depth of 1.45 microns is calculated by using the finite element method.
In the present disclosure, one of the methods for achieving modulation is to change the potential distribution inside the device by changing the potential of the modulation terminal, so as to change the carrier density distribution inside the device, further adjust the size of the corresponding lasing region on the active region, and finally adjust the output power of the lasing terminal. Under the condition that different voltages are applied to the modulation end, the potential distribution diagram of the whole device interior is calculated by using finite element method simulation, the left end is set as the modulation end in the simulation, 1.2V voltage is applied in figure 3a, and-0.5V is applied in figure 3b, the potential distribution is obviously different as shown in figures 3a and 3b, and the power which is finally applied to the lasing FP cavity 1 is obtained.
Fig. 4 is a partial enlarged view of the internal optical field distribution of the FP laser of the integrated lateral modulator simulated by the finite element method, and the mode is determined to be a gain or loss mode by the positive and negative of the propagation constant obtained by calculation. Fig. 4a shows the loss mode distribution, where the cavity loss is strong on the left and weak on the right, which results from optical coupling. Fig. 4b shows the gain mode distribution with strong gain on the right and weak gain on the left, which also results from optical coupling. This figure illustrates that if there is optical coupling in the state where one FP cavity is gain and the other FP cavity is loss, the laser light is coupled from the gain region to the loss region, causing additional loss to the gain region. But if both FP cavities are in the gain state, there is mutual optical coupling and optical amplification. As shown in fig. 4a and 4b, FP width calculated by finite element method simulation is 2 microns, pitch is 1.5 microns, length is 300 microns, lasing FP cavity 1 is gain-loaded, and modulation FP cavity 2 is a local enlarged optical field in loss state. In some embodiments, the width of lasing FP cavity 1 and modulation FP cavity 2 range from 2 microns to 4 microns with a spacing of 1.5 microns to 3 microns. And (3) performing simulation calculation, combining actual process conditions and electrical analysis, and finally obtaining the best result under the condition that the distance between the lasing FP cavity 1 and the modulation FP cavity 2 is 2 micrometers, and the width of the lasing FP cavity 1 and the modulation FP cavity 2 is 3 micrometers. The higher the coupling strength between the lasing FP cavity 1 and the modulation FP cavity 2, the smaller the required coupling length, and the stronger the optical coupling modulation effect of the two.
Fig. 5 is a graph of FP laser power-current for an integrated lateral modulator according to an embodiment of the present disclosure. As shown in fig. 5a, the abscissa is the lasing FP cavity 1 current, the ordinate is the total output power (including the lasing FP cavity 1 and the modulation FP cavity 2), the curves are obtained by coupling laser into the multimode fiber under the condition that the modulation FP cavity 2 applies different currents, and the visible maximum power is 8.3 mw; as shown in fig. 5b, when the laser is coupled into the multimode fiber and the FP cavity 2 is modulated without applying a current, the power-current curve of the FP cavity is lased, the threshold is about 37 milliamperes, and the maximum power can reach 3.7 milliwatts; as shown in fig. 5c, when laser is coupled to the modulation FP cavity 2 in the single-mode fiber to apply negative currents of different magnitudes, a power-current curve graph of the lasing FP cavity shows that the trend of the curve graph along with the current of the modulation FP cavity 2 is up-down translation.
Fig. 6 and 7 are diagrams illustrating a comparison between FP laser integrated modulation scheme and direct modulation scheme of the integrated lateral modulator according to an embodiment of the disclosure. FIG. 6 is a comparison of spectra obtained for two modulation schemes when the typical node modulation current is-20 mA and the lasing FP cavity 1 current is 70 mA; fig. 7 is a comparison of extinction curves for two modulation schemes.
Referring to fig. 6, under the condition that the modulation current is-20 milliamperes, the optical power of the integrated modulation scheme is 103 microwatts, the optical power of the direct modulation scheme is 204 microwatts, the phase difference is close to 3dB, and the extinction capability of the integrated modulation scheme is stronger.
Referring to fig. 7, the extinction curve of the integrated modulation scheme is steeper, and the slope is larger, that is, under the same modulation current, the integrated modulation scheme can achieve a stronger modulation effect, and in the aspect of modulation current, the integrated modulation needs 25 milliamperes for complete extinction, while the direct modulation needs 33 milliamperes, and the current required by the integrated modulation is reduced by 25% compared with the direct modulation. Meanwhile, from no current application to complete extinction of the modulation FP cavity 2, the potential of the modulation FP cavity 2 changes from 1.006 volt to 0.359 volt, the change amplitude is only 0.647 volt, and the change amplitude is far less than the reverse modulation voltage of more than 5 volts required by the EML laser, and high-efficiency modulation is realized.
Fig. 8 is a measured graph of a dynamic response of a small FP laser signal of the integrated lateral modulator when a modulated FP cavity of the FP laser of the integrated lateral modulator applies a direct current of 15 milliamperes and a lasing FP cavity 1 applies a constant direct current of 70 milliamperes and a radio frequency signal is loaded on a modulation end, so as to obtain a 3dB bandwidth of 5.47GHz according to the FP laser of the integrated lateral modulator shown in the embodiment of the present disclosure.
Therefore, the complete integration of the laser and the modulator is realized by the parallel arrangement of the lasing FP cavity 1 and the modulation FP cavity 2. In the embodiment of the disclosure, the injection or extraction state of the carrier can be changed by modulating a single parameter, namely potential, of the FP cavity 2, and the output power of the lasing FP cavity 1 is adjusted; changing the potential distribution in the device leads to the change of the density distribution of carriers, the size of a lasing region of an active region changes, and the output power of the lasing FP cavity 1 is adjusted; the optical gain or loss state of the modulation FP cavity 2 is adjusted, and the external modulation effect is introduced by using optical coupling. The three effects make the same modulation power consumption to obtain larger modulation amplitude. Meanwhile, the large modulation bandwidth is realized, and the optical fiber has stronger extinction capability and smaller modulation power consumption.
In terms of process preparation, the FP laser of the integrated modulator does not need complex material growth, has simple manufacturing process, low cost, high yield and easy integration, can realize high-efficiency modulation with larger bandwidth, and has good application prospect in a photonic integrated system.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly recognize the FP laser integrated with the lateral modulator of the present disclosure.
In summary, the present disclosure provides an FP laser of an integrated lateral modulator, which can achieve a stronger modulation effect with less power, and can achieve stronger optical coupling and stronger potential influence between the lasing FP cavity 1 and the modulation FP cavity 2, stronger carrier extraction and injection capabilities, and realize high-efficiency modulation with a larger bandwidth by reasonably setting structural parameters of the device. The method does not need complex material growth, has simple preparation process, low cost, high reliability and high integration level, and has good application prospect in a photon integration system.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. An FP laser integrated lateral modulator comprising:
the active layer is grown on the N-type InP substrate;
a P-type InP layer grown on the active layer;
a lasing FP cavity grown on the P-type InP layer; transmitting light in a lasing FP cavity along the extending direction of the lasing FP cavity;
a modulation FP cavity which grows on the P-type InP layer; light rays propagate in a modulation FP cavity along the extension direction of the modulation FP cavity; lateral coupling is formed between the lasing FP cavity and the modulation FP cavity, and the lateral direction is vertical to the extending direction of the lasing FP cavity and the extending direction of the modulation FP cavity;
the electric isolation groove is arranged between the lasing FP cavity and the modulation FP cavity;
and the P-surface electrode layer is grown on the lasing FP cavity and the modulation FP cavity.
2. The integrated lateral modulator FP laser of claim 1, wherein the lasing FP cavity and the modulating FP cavity are arranged in parallel.
3. The integrated lateral modulator FP laser of claim 1, further comprising: and the coating layer is arranged at the end part of the lasing FP cavity and/or the modulation FP cavity.
4. The integrated lateral modulator FP laser of claim 1, wherein the active layer comprises thereon:
the lasing region corresponds to the position of the lasing FP cavity;
and the modulation region corresponds to the position of the modulation FP cavity.
5. The FP laser of integrated lateral modulator of claim 1, wherein the gain due to carrier injection in the modulated FP cavity is greater than the loss of light propagation of the modulated FP cavity, the modulated FP cavity being in a gain state, enhancing the power of the lasing FP cavity.
6. The FP laser of integrated lateral modulator of claim 1, wherein the gain due to carrier injection in the modulated FP cavity is less than the loss of light propagation of the modulated FP cavity, which is in a loss state, reducing the power of the lasing FP cavity.
7. The FP laser with integrated lateral modulator of claim 1, wherein the modulated FP cavity is in a carrier extraction state, reducing the power of the lasing FP cavity.
8. The FP laser of an integrated lateral modulator of any one of claims 5 to 7 wherein the carrier injection or extraction effect of the external world on the FP laser of said integrated lateral modulator is adjusted in accordance with the variation of the potential in said modulated FP cavity.
9. The integrated lateral modulator FP laser of claim 1, wherein the lasing FP cavity and the modulating FP cavity are stripe ridge waveguide structures.
10. The integrated lateral modulator FP laser of claim 1, wherein the P-plane electrode layer extends from over the lasing FP cavity and the modulation FP cavity onto and covers the P-type InP layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0386797A2 (en) * | 1989-03-10 | 1990-09-12 | Canon Kabushiki Kaisha | Optical apparatus using wavelength selective photocoupler |
| CN110808530A (en) * | 2019-11-14 | 2020-02-18 | 中国科学院半导体研究所 | quasi-PT symmetrical double-ridge semiconductor laser and application thereof |
| CN111029900A (en) * | 2019-12-25 | 2020-04-17 | 中国科学院半导体研究所 | Three-cavity coupling laser based on space-weighted time symmetry |
| CN112382924A (en) * | 2020-11-12 | 2021-02-19 | 中国科学院半导体研究所 | Double-waveguide distributed feedback semiconductor laser and laser generation method |
-
2021
- 2021-03-30 CN CN202110344374.5A patent/CN113097859A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0386797A2 (en) * | 1989-03-10 | 1990-09-12 | Canon Kabushiki Kaisha | Optical apparatus using wavelength selective photocoupler |
| CN110808530A (en) * | 2019-11-14 | 2020-02-18 | 中国科学院半导体研究所 | quasi-PT symmetrical double-ridge semiconductor laser and application thereof |
| CN111029900A (en) * | 2019-12-25 | 2020-04-17 | 中国科学院半导体研究所 | Three-cavity coupling laser based on space-weighted time symmetry |
| CN112382924A (en) * | 2020-11-12 | 2021-02-19 | 中国科学院半导体研究所 | Double-waveguide distributed feedback semiconductor laser and laser generation method |
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