CN101882756A - Preparation method of trenches of polyimide-embedded syconoid ridge type devices - Google Patents
Preparation method of trenches of polyimide-embedded syconoid ridge type devices Download PDFInfo
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- CN101882756A CN101882756A CN2010101961563A CN201010196156A CN101882756A CN 101882756 A CN101882756 A CN 101882756A CN 2010101961563 A CN2010101961563 A CN 2010101961563A CN 201010196156 A CN201010196156 A CN 201010196156A CN 101882756 A CN101882756 A CN 101882756A
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- polyimide
- syconoid
- trenches
- embedded
- type devices
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Abstract
The invention discloses a preparation method of trenches of polyimide-embedded syconoid ridge type devices, comprising the following steps: step 1: growing a source layer and a limiting layer on the surface of a substrate in sequence, which are used as a basic structure of a device; step 2: manufacturing a photoetching graph on the surface of the limiting layer; step 3: photoetching: etching a syconoid ridge type structure on the surface of the limiting layer, wherein, the etching depth reaches the surface of the source layer; step 4: coating polyimide dielectric layers in the syconoid ridge type structure and on the surface of the limiting layer, and procuring; step 5: coating photoresist on the surface of the polyimide dielectric layer, and drying; and step 6: exposing, developing and removing the polyimide dielectric layers on the syconoid ridge type structure and on the surface of the limiting layer, and curing to finish manufacture of the device.
Description
Technical field
The invention belongs to semiconductor device and make the manufacture method of photoetching process technical field, particularly trenches of polyimide-embedded syconoid ridge type devices, can improve the high frequency performance of device.By the control developing rate, finish this difficult technology.
Background technology
Be accompanied by the develop rapidly of optical communication technology, more and more higher to the bandwidth requirement of opto-electronic device.Not only want the optimised devices structure, also will innovate the medium manufacture craft to reduce electric capacity.Such as wavelength 1.5um ridge waveguide type high frequency lasers device, require landfill polyimides in each 7um raceway groove on active layer 1.5um stripe shape table top both sides, other place is removed, and especially 1.5um stripe shape mesa top can not have residual, traditional photoetching process difficult satisfied.The raceway groove technology of polyimide-embedded syconoid ridge type devices structure of the present invention has satisfied this technological requirement.
Summary of the invention
The object of the invention is to provide a kind of manufacture method of trenches of polyimide-embedded syconoid ridge type devices, and solution was to the destruction of polyimides figure when it had avoided removing photoresist separately.The present invention has simplified alignment process loaded down with trivial details in the photoetching process in the semiconductor laser high-frequency device making technics.
The invention provides a kind of manufacture method of trenches of polyimide-embedded syconoid ridge type devices, comprise the steps:
Step 1: grow successively on the surface of substrate active layer and limiting layer, as the basic structure of device;
Step 2: the surface at limiting layer makes litho pattern;
Step 3: photoetching, go out two ditch ridge structures in the surface etch of limiting layer, etching depth arrives the surface of active layer;
Step 4: in two ditch ridge structures, reach the surperficial coating polyimide dielectric layer of limiting layer, precuring;
Step 5: at the surperficial resist coating of polyimides dielectric layer, oven dry;
Step 6: exposure, develop and remove two polyimides dielectric layers that the ditch ridge is structural and limiting layer is surperficial, solidify, finish the making of device.
Wherein the described polyimides dielectric layer of step 4 is to adopt ZKPI-305II type polyimides.
Wherein the time of the described precuring of step 4 is 20-40 minute, uses desk-top electrically heated drying cabinet, and the temperature of curing is 110-120 ℃.
Wherein the model of the described resist coating of step 5 is the S9912 positive photoresist.
Wherein the temperature of the described oven dry of step 5 is 90-100 ℃, and the time of oven dry is 15-20 minute, uses desk-top electrically heated drying cabinet.
Wherein the described curing of step 6 is to feed N
2High temperature furnace in carry out, its curing temperature and time are staged, 150 ℃/60 minutes earlier, 180 ℃ again/30 minutes, last 250 ℃/60 minutes, make polyimide curing complete.
Description of drawings
For further specifying technical characterictic of the present invention, below in conjunction with drawings and Examples describe in detail as after, wherein:
Fig. 1 (a)-Fig. 1 (e) is a making flow chart of the present invention.
Embodiment
Seeing also Fig. 1 (a)-Fig. 1 (e) is making flow chart of the present invention.The invention provides a kind of manufacture method of trenches of polyimide-embedded syconoid ridge type devices, comprise the steps:
Step 1: growth active layer 20 and limiting layer 30 on the surface of substrate 10, use the MOCVD growing technology usually;
Step 2: the surface at limiting layer 30 makes litho pattern;
Step 3: photoetching, go out two ditch ridge structures in the surface etch of limiting layer 30, etching depth arrives the surface of active layer 20; The general selective corrosion liquid of using only has corrosiveness to limiting layer 30 as HCL system, and active layer 20 is not had corrosiveness;
Step 4: in two ditch ridge structures, reach the surperficial coating polyimide dielectric layer 40 of limiting layer 30, precuring; The time of precuring is 20-40 minute, uses desk-top electrically heated drying cabinet, and the temperature of curing is 110-120 ℃;
Step 5: at the surperficial resist coating 50 of polyimides dielectric layer 40, oven dry; The model of photoresist 50 is the S9912 positive photoresist; Temperature is 90-100 ℃, and the time of oven dry is 15-20 minute, uses desk-top electrically heated drying cabinet.
Step 6: exposure, develop and to remove the polyimides dielectric layer 40 on structural and limiting layer 30 surfaces of two ditch ridges, must remove with the polyimides dielectric layer 40 on the center spine of microscopic examination pair ditch ridges, otherwise device is with obstructed; Solidify, feeding N
2High temperature furnace in carry out, its curing temperature and time are staged, 150 ℃/60 minutes earlier, 180 ℃ again/30 minutes, last 250 ℃/60 minutes, make polyimide curing complete.According to actual conditions, temperature can rise to 350 ℃ and keep 30 minutes, finishes the making of trenches of polyimide-embedded syconoid ridge type devices.Generally speaking, than low before solidifying, be normal behind two ditch ridge devices raceway groove polyimide curings, this is owing to solidify due to the polyimides water evaporates.
Step 7: this step determines whether needs according to the device electrode situation, and greater than in the raceway groove during polyimides area, one deck SiO can grow as the electrode contact point
2, again by conventional photoetching technique with the SiO on the center spine of two ditch ridges
2Remove, just can make the electrode points of any size.
Case study on implementation
With the two ditch ridge laser of wavelength 1.5um is example, implement the manufacture method of trenches of polyimide-embedded syconoid ridge type devices of the present invention after, operate as follows:
Step 1: at the superficial growth active layer 20 and the limiting layer 30 of substrate 10;
Step 2: the surface at limiting layer 30 makes litho pattern;
Step 3: photoetching, go out two ditch ridge structures in the surface etch of limiting layer 30, etching depth arrives the surface of active layer 20;
Step 4: in two ditch ridge structures, reach the surperficial coating polyimide dielectric layer 40 of limiting layer 30, precuring; The time of precuring is 20-40 minute, uses desk-top electrically heated drying cabinet, and the temperature of curing is 110-120 ℃;
Step 5: at the surperficial resist coating 50 of polyimides dielectric layer 40, oven dry; The model of photoresist 50 is the S9912 positive photoresist; Temperature is 90-100 ℃, and the time of oven dry is 15-20 minute, uses desk-top electrically heated drying cabinet.
Step 6: exposure, develop and to remove the polyimides dielectric layer 40 on structural and limiting layer 30 surfaces of two ditch ridges, must remove with the polyimides dielectric layer 40 on the center spine of microscopic examination pair ditch ridges, otherwise device is with obstructed; Solidify, feeding N
2High temperature furnace in carry out, its curing temperature and time is, 150 ℃/60 minutes, 180 ℃/30 minutes, 250 ℃/60 minutes, according to actual conditions, can rise to 350 ℃ and keep 30 minutes, make polyimide curing complete; Finish the making of trenches of polyimide-embedded syconoid ridge type devices.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (6)
1. the manufacture method of a trenches of polyimide-embedded syconoid ridge type devices comprises the steps:
Step 1: grow successively on the surface of substrate active layer and limiting layer, as the basic structure of device;
Step 2: the surface at limiting layer makes litho pattern;
Step 3: photoetching, go out two ditch ridge structures in the surface etch of limiting layer, etching depth arrives the surface of active layer;
Step 4: in two ditch ridge structures, reach the surperficial coating polyimide dielectric layer of limiting layer, precuring;
Step 5: at the surperficial resist coating of polyimides dielectric layer, oven dry;
Step 6: exposure, develop and remove two polyimides dielectric layers that the ditch ridge is structural and limiting layer is surperficial, solidify, finish the making of device.
2. the manufacture method of trenches of polyimide-embedded syconoid ridge type devices according to claim 1, wherein the described polyimides dielectric layer of step 4 is to adopt ZKPI-305II type polyimides.
3. the manufacture method of trenches of polyimide-embedded syconoid ridge type devices according to claim 1, wherein the time of the described precuring of step 4 is 20-40 minute, uses desk-top electrically heated drying cabinet, the temperature of curing is 110-120 ℃.
4. the manufacture method of trenches of polyimide-embedded syconoid ridge type devices according to claim 1, wherein the model of the described resist coating of step 5 is the S9912 positive photoresist.
5. the manufacture method of trenches of polyimide-embedded syconoid ridge type devices according to claim 1, wherein the temperature of the described oven dry of step 5 is 90-100 ℃, the time of oven dry is 15-20 minute, uses desk-top electrically heated drying cabinet.
6. the manufacture method of trenches of polyimide-embedded syconoid ridge type devices according to claim 1, wherein the described curing of step 6 is to feed N
2High temperature furnace in carry out, its curing temperature and time are staged, 150 ℃/60 minutes earlier, 180 ℃ again/30 minutes, last 250 ℃/60 minutes, make polyimide curing complete.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101961563A CN101882756A (en) | 2010-06-02 | 2010-06-02 | Preparation method of trenches of polyimide-embedded syconoid ridge type devices |
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| CN2010101961563A CN101882756A (en) | 2010-06-02 | 2010-06-02 | Preparation method of trenches of polyimide-embedded syconoid ridge type devices |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103482563A (en) * | 2012-06-14 | 2014-01-01 | 比亚迪股份有限公司 | MEMS microstructure preparation method |
| CN108169851A (en) * | 2018-01-09 | 2018-06-15 | 河南仕佳光子科技股份有限公司 | A kind of polyimides makes the technique that ridge waveguide device planarizes |
| CN109216162A (en) * | 2018-08-29 | 2019-01-15 | 中国科学院上海微系统与信息技术研究所 | Semiconductor structure and preparation method thereof |
Citations (4)
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| US5770474A (en) * | 1996-06-29 | 1998-06-23 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating laser diode |
| US20030064536A1 (en) * | 2001-09-28 | 2003-04-03 | Koji Yamada | Method of manufacturing a waveguide optical semiconductor device |
| US20050286828A1 (en) * | 2004-06-28 | 2005-12-29 | Yasushi Sakuma | Semiconductor optical device and manufacturing method thereof |
| CN1956284A (en) * | 2005-10-29 | 2007-05-02 | 深圳飞通光电子技术有限公司 | Ridge waveguide type semiconductor laser and its manufacturing method |
-
2010
- 2010-06-02 CN CN2010101961563A patent/CN101882756A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5770474A (en) * | 1996-06-29 | 1998-06-23 | Hyundai Electronics Industries Co., Ltd. | Method of fabricating laser diode |
| US20030064536A1 (en) * | 2001-09-28 | 2003-04-03 | Koji Yamada | Method of manufacturing a waveguide optical semiconductor device |
| US20050286828A1 (en) * | 2004-06-28 | 2005-12-29 | Yasushi Sakuma | Semiconductor optical device and manufacturing method thereof |
| CN1956284A (en) * | 2005-10-29 | 2007-05-02 | 深圳飞通光电子技术有限公司 | Ridge waveguide type semiconductor laser and its manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103482563A (en) * | 2012-06-14 | 2014-01-01 | 比亚迪股份有限公司 | MEMS microstructure preparation method |
| CN103482563B (en) * | 2012-06-14 | 2016-03-09 | 比亚迪股份有限公司 | A kind of preparation method of MEMS micro-structural |
| CN108169851A (en) * | 2018-01-09 | 2018-06-15 | 河南仕佳光子科技股份有限公司 | A kind of polyimides makes the technique that ridge waveguide device planarizes |
| CN109216162A (en) * | 2018-08-29 | 2019-01-15 | 中国科学院上海微系统与信息技术研究所 | Semiconductor structure and preparation method thereof |
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Open date: 20101110 |